JP6449696B2 - Exhaust gas treatment method - Google Patents
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- JP6449696B2 JP6449696B2 JP2015055758A JP2015055758A JP6449696B2 JP 6449696 B2 JP6449696 B2 JP 6449696B2 JP 2015055758 A JP2015055758 A JP 2015055758A JP 2015055758 A JP2015055758 A JP 2015055758A JP 6449696 B2 JP6449696 B2 JP 6449696B2
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- 238000000034 method Methods 0.000 title claims description 19
- 239000007789 gas Substances 0.000 claims description 83
- 239000011261 inert gas Substances 0.000 claims description 21
- 238000001784 detoxification Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000002485 combustion reaction Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000006378 damage Effects 0.000 claims description 3
- 230000005856 abnormality Effects 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Description
本発明は、排ガス処理方法に関し、詳しくは、デバイス製造装置から排出される可燃性成分を含む排ガスを無害化処理する排ガス処理方法に関する。 The present invention relates to an exhaust gas treatment method, and more particularly, to an exhaust gas treatment method for detoxifying exhaust gas containing a combustible component discharged from a device manufacturing apparatus.
半導体，液晶，太陽光発電パネル，ＬＥＤなどの電子デバイスを成膜するデバイス製造装置から排出される可燃性成分を含む排ガスを無害化処理する燃焼式排ガス処理装置として、逆火現象や高温ガスの循環などを防止して装置の保護や稼働効率の向上を図るため、排ガスを燃焼炉に導く通常ラインと燃焼炉以外に導くバイパスラインとを切替可能に設けるとともに、通常ラインに不活性ガスを供給するガス供給手段を設け、燃焼炉入口部の温度が上昇したときにラインを切り替え、燃焼炉を停止させるようにした除害装置が知られている（例えば、特許文献１参照。）。 As a combustion-type exhaust gas treatment device that detoxifies exhaust gas containing combustible components discharged from device manufacturing equipment that forms electronic devices such as semiconductors, liquid crystals, photovoltaic panels, and LEDs, In order to prevent the circulation, etc., and to protect the equipment and improve the operation efficiency, the normal line that leads the exhaust gas to the combustion furnace and the bypass line that leads to other than the combustion furnace can be switched, and inert gas is supplied to the normal line There has been known a detoxifying device provided with gas supply means for switching the line when the temperature at the inlet of the combustion furnace rises and stopping the combustion furnace (for example, see Patent Document 1).
しかし、前記除害装置では、逆火現象以外の原因、例えば、排ガスの圧力振動によって排気温度が上昇するような軽度の排気温度異常時でも、ラインの切替や燃焼炉の停止処理が行われてしまうことがあるため、デバイス製造装置からの排ガスの排出状況によっては除害装置の稼働効率が低下するおそれがあった。 However, in the abatement device, line switching and combustion furnace stop processing are performed even when there is a cause other than flashback, for example, a slight exhaust temperature abnormality such as the exhaust gas temperature rising due to exhaust gas pressure oscillation. As a result, the operating efficiency of the abatement apparatus may be reduced depending on the state of exhaust gas emission from the device manufacturing apparatus.
そこで本発明は、軽度の排気温度異常時には装置の運転を継続し、重度の排気温度異常時には安全に装置を停止させることにより、安全性を確保しながら装置の稼働効率を向上させることができる排ガス処理方法を提供することを目的としている。 Therefore, the present invention continues the operation of the apparatus when the exhaust gas temperature is abnormal abnormally, and stops the apparatus safely when the exhaust gas temperature is abnormal, thereby improving the operating efficiency of the apparatus while ensuring safety. It aims to provide a processing method.
上記目的を達成するため、本発明の排ガス処理方法は、デバイス製造装置から排出される可燃性成分を含む排ガスを除害処理部で無害化する排ガス処理方法において、前記デバイス製造装置から排気ラインに排出され、処理ラインを通って前記除害処理部に導入される前記排ガスの温度を測定し、測定した排ガスの温度があらかじめ設定された第１設定温度を超えたときに、前記処理ラインに不活性ガスを添加して排ガスの温度を下げることによって前記除害処理部での無害化処理を継続し、前記測定した排ガスの温度が前記第１設定温度よりも高い温度にあらかじめ設定された第２設定温度を超えたときに、前記排気ラインを流れる排ガスの流路を前記処理ラインからバイパスラインに切り替えるとともに、前記除害処理部の運転を停止することを特徴としている。 In order to achieve the above object, an exhaust gas treatment method of the present invention is an exhaust gas treatment method in which an exhaust gas containing a combustible component discharged from a device manufacturing apparatus is detoxified by a detoxification processing unit. The temperature of the exhaust gas discharged and introduced into the abatement treatment section through the treatment line is measured. When the measured temperature of the exhaust gas exceeds a preset first set temperature, the exhaust gas is not by adding the active gas continues detoxification in the abatement unit by lowering the temperature of the exhaust gas, a second temperature of the exhaust gas which has the measurement is pre-set to a temperature higher than the first set temperature When the set temperature is exceeded, the flow path of the exhaust gas flowing through the exhaust line is switched from the treatment line to the bypass line, and the operation of the abatement treatment unit is stopped. It is characterized in that.
さらに、本発明の排ガス処理方法は、前記不活性ガスを添加した排ガスの温度を測定し、測定した排ガスの温度が前記第１設定温度以下になったときに、前記不活性ガスの添加を停止すること、前記第１設定温度が６０℃以上８０℃未満の範囲内に設定され、前記第２設定温度が８０℃以上〜１８０℃以下の範囲内に設定されていること、前記除害処理部が、燃焼式除害装置又はヒーター加熱式除害装置であることを特徴としている。 Further, the exhaust gas treatment method of the present invention measures the temperature of the exhaust gas to which the inert gas is added, and stops the addition of the inert gas when the measured temperature of the exhaust gas becomes equal to or lower than the first set temperature. The first set temperature is set in a range of 60 ° C. or more and less than 80 ° C., and the second set temperature is set in a range of 80 ° C. or more and 180 ° C. or less, the detoxification processing unit Is a combustion type abatement device or a heater heating type abatement device.
本発明の排ガス処理方法によれば、デバイス製造装置からの排ガスの圧力振動によって排気温度が上昇するような軽度の排気温度異常で排ガスの温度が第１設定温度を超えたときには、排ガスに不活性ガスを添加して排ガスの温度を下げることにより、除害処理部での無害化処理を継続するので、軽度の排気温度異常で除害装置の運転が停止してしまうことがなく、連続して無害化処理を続けることができる。また、逆火や高温ガスの循環などの重度の排気温度異常で排ガスの温度が第２設定温度を超えたときには、排ガスの流路をバイパスラインに切り替えるとともに、除害処理部の運転を停止させることにより、排ガス処理装置を安全に停止させることができる。 According to the exhaust gas treatment method of the present invention, when the exhaust gas temperature exceeds the first set temperature due to a slight exhaust temperature abnormality in which the exhaust gas temperature rises due to the pressure vibration of the exhaust gas from the device manufacturing apparatus, the exhaust gas is inactive. By reducing the temperature of the exhaust gas by adding gas, the detoxification process is continued in the detoxification section, so the operation of the detoxification device will not stop due to a slight exhaust temperature abnormality. The detoxification process can be continued. Also, when the exhaust gas temperature exceeds the second set temperature due to a severe exhaust temperature abnormality such as flashback or high-temperature gas circulation, the exhaust gas flow path is switched to the bypass line and the operation of the abatement treatment unit is stopped. Thus, the exhaust gas treatment device can be safely stopped.
図１に示す排ガス処理装置は、半導体，液晶，太陽光発電パネル，ＬＥＤなどの電子デバイスを成膜するデバイス製造装置１１のチャンバー１１ａ内から真空ポンプ１１ｂを介して排出される排ガスの無害化処理（除害処理）を行うものであって、排ガス中に含まれる水素、アンモニア、シランといった広い濃度範囲で可燃性を有する成分を、燃焼式除害装置やヒーター加熱式除害装置を用いた除害処理部１２にて高温で分解して無害化するように形成されている。 The exhaust gas treatment apparatus shown in FIG. 1 is a detoxification process for exhaust gas discharged from a chamber 11a of a device manufacturing apparatus 11 for forming an electronic device such as a semiconductor, a liquid crystal, a photovoltaic power generation panel, and an LED through a vacuum pump 11b. (Detoxification treatment) that removes flammable components such as hydrogen, ammonia, and silane contained in the exhaust gas using a combustion-type abatement device or a heater-heating type abatement device. It is formed so as to be detoxified by being decomposed at a high temperature in the harm treatment unit 12.
この排ガス処理装置は、デバイス製造装置１１から排気ライン１３に排出された排ガスの流路を、前記除害処理部１２に排ガスを導入する処理ライン１４と、補助除害処理部１５に排ガスを導入するバイパスライン１６とに切り替えるための流路切替弁１７を有している。前記処理ライン１４には、排ガス流れの上流側から順に、圧力センサー１８、不活性ガス導入ライン１９及び温度センサー２０が設けられている。また、除害処理部１２には、処理後のガスを排出するための排気ファン２１が設けられている。
This exhaust gas treatment apparatus introduces the exhaust gas flow into the exhaust line 13 from the device manufacturing apparatus 11, the treatment line 14 for introducing the exhaust gas into the abatement treatment section 12, and the exhaust gas into the auxiliary abatement treatment section 15. A flow path switching valve 17 for switching to the bypass line 16 is provided. The processing line 14 is provided with a
温度センサー２０には、第１設定温度と、該第１設定温度より高温の第２設定温度とがあらかじめ設定されており、第１設定温度以下の温度範囲が低温状態、第１設定温度と第２設定温度との間の温度範囲が中温状態、第２設定温度を超える温度範囲が高温状態に区分している。
The
デバイス製造装置１１の正常な運転状態における排ガスの温度は、一般に２０〜４０℃の低温状態であり、この低温状態では、流路切替弁１７は、排気ライン１３から処理ライン１４に排ガスを流す方向となっており、不活性ガス導入ライン１９の導入弁１９Ｖは閉じている。
The temperature of the exhaust gas in the normal operation state of the device manufacturing apparatus 11 is generally a low temperature state of 20 to 40 ° C. In this low temperature state, the flow path switching valve 17 flows the exhaust gas from the exhaust line 13 to the processing line 14. The introduction valve 19V of the inert
低温状態での運転中に、排ガスの圧力振動などによって排ガスの温度が低温状態から上昇し、前記温度センサー２０で測定した排ガスの温度があらかじめ設定された第１設定温度を超えて中温状態になったときには、不活性ガス導入ライン１９の導入弁１９Ｖを開き、処理ライン１４に不活性ガス、例えば常温又は低温の窒素ガスやアルゴンガスを添加し、排ガスの温度を下げることによって除害処理部１２での無害化処理を継続する。
During operation in a low temperature state, the temperature of the exhaust gas rises from the low temperature state due to exhaust gas pressure vibration, etc., and the temperature of the exhaust gas measured by the
前記第１設定温度は、除害処理部１２の温度上昇による構成部材や機器の損傷を防止できる温度に設定されており、特に、配管接続部に用いられている樹脂製シール材を保護できる温度、通常は、クロロプレンゴム、ニトリルゴムなどのゴム系材料の耐熱温度である６０℃以上８０℃未満の範囲内に設定することが望ましい。 The first set temperature is set to a temperature that can prevent damage to structural members and equipment due to a temperature increase of the abatement treatment unit 12, and in particular, a temperature that can protect the resin sealing material used in the pipe connection part. Usually, it is desirable to set the temperature within the range of 60 ° C. or more and less than 80 ° C., which is the heat resistant temperature of rubber-based materials such as chloroprene rubber and nitrile rubber.
また、不活性ガス導入ライン１９からの不活性ガスの導入量は、処理ライン１４を流れる排ガス量や除害処理部１２の構成などの各種条件に応じて適宜に設定することができるが、処理ライン１４内を流れる排ガスの温度を十分に下げることができるとともに、除害処理部１２で処理中のガスが排気ライン１３に向かって逆流することを防止できる流量に設定することが望ましい。このとき、温度センサー２０の測定温度に応じて不活性ガスの導入量を変化させるようにしてもよい。
Further, the amount of inert gas introduced from the inert
このように、排ガスの圧力振動などによって除害処理部１２の入口部における排ガスの温度が低温状態から中温状態に上昇したときには、まず、軽度の排気温度異常が発生したと判断し、不活性ガスを添加しながら除害処理部１２の運転を継続することにより、排ガス処理装置の各種構成部材を保護しながら排ガスの無害化処理を連続して行うことができる。この中温状態での運転中に処理ライン１４内の排ガスの温度が第１設定温度以下に低下したら導入弁１９Ｖを閉じて不活性ガスの添加を終了して低温状態での運転に戻る。このとき、第１設定温度より低い温度を復帰温度として設定しておき、温度センサー２０の測定温度が復帰温度に低下したら不活性ガスの添加を終了するようにしてもよい。
Thus, when the temperature of the exhaust gas at the inlet of the abatement treatment unit 12 rises from a low temperature state to an intermediate temperature state due to the pressure vibration of the exhaust gas, it is first determined that a slight exhaust temperature abnormality has occurred, and the inert gas By continuing the operation of the detoxification treatment unit 12 while adding the odor, it is possible to continuously perform the detoxification treatment of the exhaust gas while protecting various components of the exhaust gas treatment device. If the temperature of the exhaust gas in the processing line 14 falls below the first set temperature during the operation in the intermediate temperature state, the introduction valve 19V is closed to finish the addition of the inert gas, and the operation returns to the low temperature state. At this time, a temperature lower than the first set temperature may be set as the return temperature, and the addition of the inert gas may be terminated when the temperature measured by the
一方、不活性ガスを添加しても処理ライン１４内の排ガスの温度が低下せず、第２設定温度を超える温度に上昇した場合は、重度の排気温度異常が発生したと判断し、流路切替弁１７を排気ライン１３からバイパスライン１６に排ガスを流す方向に切り替え、バイパスライン１６から補助除害処理部１５に排ガスを導入して補助除害処理部１５で無害化処理を行う。同時に、除害処理部１２の運転を停止する。除害処理部１２の運転停止は、燃焼式除害装置の場合は燃焼用燃料の供給停止、ヒーター加熱式除害装置の場合はヒーターの電源ＯＦＦによって安全に行うことができる。また、処理ライン１４への不活性ガスの添加は、除害処理部１２の温度が十分に低下するまで継続させてもよい。 On the other hand, if the temperature of the exhaust gas in the processing line 14 does not decrease even when the inert gas is added and rises to a temperature exceeding the second set temperature, it is determined that a severe exhaust temperature abnormality has occurred, and the flow path The switching valve 17 is switched to the direction in which the exhaust gas flows from the exhaust line 13 to the bypass line 16, the exhaust gas is introduced from the bypass line 16 to the auxiliary detoxification processing unit 15, and the auxiliary detoxification processing unit 15 performs the detoxification process. At the same time, the operation of the abatement processing unit 12 is stopped. The operation of the abatement processing unit 12 can be safely stopped by stopping the supply of combustion fuel in the case of a combustion type abatement device and by turning off the heater power in the case of a heater heating type abatement device. Further, the addition of the inert gas to the treatment line 14 may be continued until the temperature of the abatement treatment unit 12 is sufficiently lowered.
前記第２設定温度は、除害処理部１２の状態や排ガス量に応じて適宜設定できるが、通常は、８０℃以上〜１８０℃以下の範囲内に設定すればよい。 The second set temperature can be set as appropriate according to the state of the abatement treatment unit 12 and the amount of exhaust gas, but is usually set within a range of 80 ° C. to 180 ° C.
これにより、排ガス処理装置やデバイス製造装置１１を重度の排気温度異常から保護することができるとともに、排ガスの無害化処理は、補助除害処理部１５における吸着剤（除害剤）を用いた吸着処理や、薬液を用いた吸収処理などによって行うことができる。 Thereby, the exhaust gas treatment apparatus and the device manufacturing apparatus 11 can be protected from severe exhaust temperature abnormality, and the detoxification process of the exhaust gas is performed by adsorption using an adsorbent (detoxifying agent) in the auxiliary detoxification processing unit 15. It can be performed by treatment or absorption treatment using a chemical solution.
除害処理部１２の温度が低下し、重度の排気温度異常が解消された後、除害処理部１２を起動し、前記低温状態での無害化処理を再開する。 After the temperature of the abatement processing section 12 is lowered and the severe exhaust temperature abnormality is resolved, the abatement processing section 12 is activated and the harmless processing in the low temperature state is resumed.
なお、不活性ガス導入ライン１９からの不活性ガスは、少量を常時導入するようにしてもよい。
Note that a small amount of the inert gas from the inert
１１…デバイス製造装置、１１ａ…チャンバー、１１ｂ…真空ポンプ、１２…除害処理部、１３…排気ライン、１４…処理ライン、１５…補助除害処理部、１６…バイパスライン、１７…流路切替弁、１８…圧力センサー、１９…不活性ガス導入ライン、１９Ｖ…導入弁、２０…温度センサー、２１…排気ファン DESCRIPTION OF SYMBOLS 11 ... Device manufacturing apparatus, 11a ... Chamber, 11b ... Vacuum pump, 12 ... Detoxification processing part, 13 ... Exhaust line, 14 ... Processing line, 15 ... Auxiliary detoxification processing part, 16 ... Bypass line, 17 ... Channel switching Valve, 18 ... Pressure sensor, 19 ... Inert gas introduction line, 19V ... Introduction valve, 20 ... Temperature sensor, 21 ... Exhaust fan
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| JPH07106315B2 (en) * | 1992-07-06 | 1995-11-15 | 株式会社荏原製作所 | Operating method of vacuum processing equipment |
| JPH10122539A (en) * | 1996-10-18 | 1998-05-15 | Nippon Sanso Kk | Discharged gas processing device |
| JPH11197440A (en) * | 1998-01-09 | 1999-07-27 | Kokusai Electric Co Ltd | Gas detoxification device |
| JP2004349442A (en) * | 2003-05-22 | 2004-12-09 | Sony Corp | Method and apparatus for detoxifying exhaust gas |
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