JP6448258B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6448258B2 JP6448258B2 JP2014173064A JP2014173064A JP6448258B2 JP 6448258 B2 JP6448258 B2 JP 6448258B2 JP 2014173064 A JP2014173064 A JP 2014173064A JP 2014173064 A JP2014173064 A JP 2014173064A JP 6448258 B2 JP6448258 B2 JP 6448258B2
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Description
(実施の形態1)
図1〜図3を参照して、本実施の形態の半導体装置は、高耐圧の横型MOSトランジスタTRAを有している。この横型MOSトランジスタTRAは、半導体基板SUBに形成されており、n+ソース領域SRと、n+ドレイン領域DRと、n型オフセット領域OFと、p型ボディ領域BRと、p+コンタクト領域CRと、ゲート絶縁層GIと、ゲート電極GEとを有している。
図9および図10を参照して、半導体基板SUBは、下から順に積層された、p+基板領域PSBと、p-エピタキシャル領域PE1と、n型埋め込み領域NBLと、p型埋め込み領域PBLと、p型リサーフ領域PRSと、p-エピタキシャル領域PE2とを有している。
図24および図25を参照して、本実施の形態の構成は、図9および図10に示す構成と比較して導電層BCの底面がp型リサーフ領域PRSに接している点において異なっている。周囲絶縁層BIは、導電層BCの側面を覆っているが、導電層BCの底面を覆っていない。このため導電層BCの底面はp型リサーフ領域PRSに接しており、導電層BCはp型リサーフ領域PRSと電気的に接続されている。導電層BCはn+ソース領域SRと電気的に接続されているため、p型リサーフ領域PRSもn+ソース領域SRと電気的に接続されておりソース電位を有している。
図29および図30を参照して、本実施の形態の構成は、図9および図10に示す構成と比較して、溝TR内の導電層BCがp+基板領域PSBまたはp-エピタキシャル領域PE1に接している点において異なっている。
また図37および図38に示すように溝TRがp+基板領域PSBに達した構成において、導電層BCの底面に周囲絶縁層BIが形成されており、導電層BCの底面がp+基板領域PSBに接していなくてもよい。この構成においては、p+基板領域PSBの電位を導電層BCで固定することはできない。しかしトレンチリサーフ構造の溝TR内に導電層BCが形成されているため、実施の形態1と同様、オン抵抗の低減と耐圧の向上との両立を高いレベルで実現することができる。
図39および図40を参照して、本実施の形態の構成は、図9および図10に示す構成と比較して、溝TR内であって導電層BCのドレイン側に埋め込み絶縁層IBIが埋め込まれた点において異なっている。この構成においては、図40に示すように、半導体基板SUBの主表面において、導電層BCのn+ドレイン領域DR側の端部と溝TRのn+ドレイン領域DR側の端部との間の距離L1は、導電層BCのn+ソース領域SR側の端部と溝TRのn+ソース領域SR側の端部との間の距離L2よりも大きくなっている。
図41および図42を参照して、本実施の形態の構成は、図9および図10に示す構成と比較して、導電層BCがドープドポリシリコンよりなっている点において主に異なっている。
図50および図51を参照して、本実施の形態の構成は、図41および図42に示す構成と比較して導電層BCの底面がp型リサーフ領域PRSに接している点において異なっている。周囲絶縁層BIは、導電層BCの側面を覆っているが、導電層BCの底面を覆っていない。このため導電層BCの底面はp型リサーフ領域PRSに接しており、導電層BCはp型リサーフ領域PRSと電気的に接続されている。導電層BCはn+ソース領域SRと電気的に接続されているため、p型リサーフ領域PRSもn+ソース領域SRと電気的に接続されておりソース電位を有している。
図53および図54を参照して、本実施の形態の構成は、図41および図42に示す構成と比較して溝TRが素子分離用の不純物領域であるn型埋め込み領域NBLおよびp型埋め込み領域PBLを貫通して、n型埋め込み領域NBLの下側に位置するp+基板領域PSBまたはp-エピタキシャル領域PE1に接続されている。
図55および図56を参照して、本実施の形態の構成は、図9および図10に示す構成と比較して、溝TRの周囲を取り囲むようにn型オフセット領域OFとは逆導電型のp型周囲領域PELが形成されている点において異なっている。
以上、本発明者によってなされた発明を実施の形態に基づき具体的に説明したが、本発明は前記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることはいうまでもない。
Claims (9)
- 主表面を有する半導体基板と、
前記半導体基板の前記主表面に形成されたソース領域と、
前記ソース領域と離れて前記主表面に形成されたドレイン領域と、
前記ドレイン領域と前記ソース領域との間に位置し、前記ソース領域と離れて前記主表面に形成されたオフセット領域と、
前記ソース領域と前記オフセット領域とに挟まれる領域に対向するように前記主表面上に形成されたゲート電極と、
前記主表面において前記ドレイン領域から前記ソース領域に向かう方向に延びるように前記オフセット領域に形成された溝部と、
前記溝部内に形成され、かつ前記主表面において前記ドレイン領域から前記ソース領域に向かう方向に延びる導電層と、
前記溝部内において、前記導電層の周囲に形成された周囲絶縁層と、
前記オフセット領域の下側に接するように形成された、前記オフセット領域とは逆導電型のリサーフ領域とを備え、
前記周囲絶縁層は前記導電層の側面を覆い、前記導電層の底面は前記半導体基板に接しており、
前記リサーフ領域は前記導電層の前記底面と接続されている、半導体装置。 - 前記溝部内であって、前記導電層の前記ドレイン領域側に埋め込まれた埋め込み絶縁層をさらに備えた、請求項1に記載の半導体装置。
- 前記主表面において、前記導電層の前記ドレイン領域側の端部と前記溝部の前記ドレイン領域側の端部との間の距離は、前記導電層の前記ソース領域側の端部と前記溝部の前記ソース領域側の端部との間の距離よりも大きい、請求項1に記載の半導体装置。
- 前記溝部の底壁は前記オフセット領域内に位置している、請求項1に記載の半導体装置。
- 前記導電層は固定電位が印加されるよう構成されている、請求項1に記載の半導体装置。
- 前記導電層は前記ソース領域と電気的に接続されている、請求項1に記載の半導体装置。
- 前記導電層は、不純物が導入された多結晶シリコンよりなっている、請求項1に記載の半導体装置。
- 前記溝部は複数の溝を有し、
前記複数の溝は、前記主表面において互いに離れて並走している、請求項1に記載の半導体装置。 - 半導体基板の主表面に位置するソース領域と、前記ソース領域と離れて前記主表面に位置するドレイン領域と、前記ドレイン領域と前記ソース領域との間に位置し、前記ソース領域と離れて前記主表面に位置するオフセット領域と、前記オフセット領域の下側に接する前記オフセット領域とは逆導電型のリサーフ領域と、前記ソース領域と前記オフセット領域とに挟まれる領域に対向するように前記主表面上に位置するゲート電極とを有する絶縁ゲート型電界効果トランジスタを前記半導体基板に形成する工程と、
前記主表面において前記ドレイン領域から前記ソース領域に向かう方向に延びるように前記オフセット領域に溝部を形成する工程と、
前記絶縁ゲート型電界効果トランジスタを覆うように、かつ前記溝部内を埋め込むように前記主表面上と前記溝部の側壁上および底壁上とに絶縁層を形成する工程と、
前記溝部の前記側壁上の前記絶縁層を残しつつ、前記絶縁層の上面から前記溝部の前記底壁において前記リサーフ領域に達するように前記絶縁層に孔部を形成する工程と、
前記孔部内に導電層を前記溝部の前記底壁において前記リサーフ領域に接するように埋め込む工程とを備えた、半導体装置の製造方法。
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