JP6434313B2 - 直接に接着される格子不整合半導体デバイス - Google Patents

直接に接着される格子不整合半導体デバイス Download PDF

Info

Publication number
JP6434313B2
JP6434313B2 JP2015000770A JP2015000770A JP6434313B2 JP 6434313 B2 JP6434313 B2 JP 6434313B2 JP 2015000770 A JP2015000770 A JP 2015000770A JP 2015000770 A JP2015000770 A JP 2015000770A JP 6434313 B2 JP6434313 B2 JP 6434313B2
Authority
JP
Japan
Prior art keywords
layer
substrate
adhesive layer
subassembly
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015000770A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015156478A5 (enExample
JP2015156478A (ja
Inventor
ダニエル シー． ロー，
ダニエル シー． ロー，
リチャード アール． キング，
リチャード アール． キング，
ディミトリ ダニエル クルット，
ディミトリ ダニエル クルット，
ダナンジャイ ブサリ，
ダナンジャイ ブサリ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing Co
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Publication of JP2015156478A publication Critical patent/JP2015156478A/ja
Publication of JP2015156478A5 publication Critical patent/JP2015156478A5/ja
Application granted granted Critical
Publication of JP6434313B2 publication Critical patent/JP6434313B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2015000770A 2014-01-10 2015-01-06 直接に接着される格子不整合半導体デバイス Active JP6434313B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/152,464 US9331227B2 (en) 2014-01-10 2014-01-10 Directly bonded, lattice-mismatched semiconductor device
US14/152,464 2014-01-10

Publications (3)

Publication Number Publication Date
JP2015156478A JP2015156478A (ja) 2015-08-27
JP2015156478A5 JP2015156478A5 (enExample) 2018-02-22
JP6434313B2 true JP6434313B2 (ja) 2018-12-05

Family

ID=52278534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015000770A Active JP6434313B2 (ja) 2014-01-10 2015-01-06 直接に接着される格子不整合半導体デバイス

Country Status (4)

Country Link
US (1) US9331227B2 (enExample)
EP (1) EP2894661B1 (enExample)
JP (1) JP6434313B2 (enExample)
CN (1) CN104779211B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3047351B1 (fr) 2016-02-03 2023-07-14 Soitec Silicon On Insulator Substrat avance
JP7032434B2 (ja) * 2017-01-04 2022-03-08 曾 世憲 表示装置
KR20190044235A (ko) 2017-10-20 2019-04-30 한국전력공사 격자 부정합 완충 구조를 갖는 다중 접합 태양전지 및 이의 제조 방법
CN111653649B (zh) * 2020-06-05 2023-09-05 中国科学院上海微系统与信息技术研究所 一种Si基InGaAs光电探测器的制备方法及光电探测器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2705283B2 (ja) * 1990-06-14 1998-01-28 日立電線株式会社 積層型太陽電池及びその製造方法
US6746777B1 (en) 2000-05-31 2004-06-08 Applied Optoelectronics, Inc. Alternative substrates for epitaxial growth
ATE346410T1 (de) * 2000-08-04 2006-12-15 Amberwave Systems Corp Siliziumwafer mit monolithischen optoelektronischen komponenten
US7157119B2 (en) * 2002-06-25 2007-01-02 Ppg Industries Ohio, Inc. Method and compositions for applying multiple overlying organic pigmented decorations on ceramic substrates
US6951819B2 (en) * 2002-12-05 2005-10-04 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US20050067377A1 (en) 2003-09-25 2005-03-31 Ryan Lei Germanium-on-insulator fabrication utilizing wafer bonding
JP2005159071A (ja) * 2003-11-27 2005-06-16 Ricoh Co Ltd 半導体デバイスおよびその製造方法および光伝送システム
US8227689B2 (en) * 2004-06-15 2012-07-24 The Boeing Company Solar cells having a transparent composition-graded buffer layer
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US11211510B2 (en) * 2005-12-13 2021-12-28 The Boeing Company Multijunction solar cell with bonded transparent conductive interlayer
US8236600B2 (en) * 2008-11-10 2012-08-07 Emcore Solar Power, Inc. Joining method for preparing an inverted metamorphic multijunction solar cell
US20110124146A1 (en) * 2009-05-29 2011-05-26 Pitera Arthur J Methods of forming high-efficiency multi-junction solar cell structures
US8822817B2 (en) 2010-12-03 2014-09-02 The Boeing Company Direct wafer bonding
US10170652B2 (en) * 2011-03-22 2019-01-01 The Boeing Company Metamorphic solar cell having improved current generation
US20140137930A1 (en) * 2012-11-16 2014-05-22 Solar Junction Corporation Multijunction solar cells

Also Published As

Publication number Publication date
EP2894661A1 (en) 2015-07-15
US20150200321A1 (en) 2015-07-16
CN104779211B (zh) 2018-12-28
US9331227B2 (en) 2016-05-03
EP2894661B1 (en) 2022-09-07
JP2015156478A (ja) 2015-08-27
CN104779211A (zh) 2015-07-15

Similar Documents

Publication Publication Date Title
KR101719857B1 (ko) 웨이퍼 직접 접합
TWI681565B (zh) 利用超晶格磊晶層對磊晶剝離薄膜裝置行非破壞性晶圓回收
TWI545794B (zh) 具有磊晶樣板之工程基板總成及其相關系統、方法及裝置
KR101719620B1 (ko) 다중접합 태양 전지 소자들의 제조
JP6434313B2 (ja) 直接に接着される格子不整合半導体デバイス
CN102779896A (zh) 晶片接合的太阳能电池和制造方法
US20080160661A1 (en) Method and structure for fabricating solar cells using a layer transfer process
TW201436266A (zh) 多接面太陽能電池
JP5422082B2 (ja) 太陽電池及びその製造方法
CN105247692B (zh) 多转移组件处理
CN106796965A (zh) 包括接合层的半导体结构、多结光伏电池和相关方法
US9425104B2 (en) Complementary metal oxide semiconductor device and method of manufacturing the same
JP2018514083A (ja) プレパターニングされたメサを経由する歪み緩和エピタキシャルリフトオフ
CN112018025A (zh) Ⅲ-ⅴ族化合物半导体异质键合结构的制备方法
CN109037399A (zh) 多结太阳能电池装置的制造
US20050161078A1 (en) Solar cell mechanical interconnection using direct wafer bonding
US8569097B1 (en) Flexible III-V solar cell structure
KR101700724B1 (ko) 다중접합 태양 전지 소자들의 제조
JP2017510085A (ja) 非トラッキングミニ複合放物面集光器と集積化されたエピタキシャルリフトオフ処理されたＧａＡｓ薄膜太陽電池
WO2005060723A3 (en) Wafer bonded epitaxial templates for silicon heterostructures
Lee Compound Semiconductor-Based Thin-Film and Flexible Optoelectronics.
Niemeyer et al. Next generation of wafer-bonded multi-junction solar cells
CN104716153B (zh) 全光单片集成光电器件及其制作方法
JPH04307927A (ja) ヘテロエピタキシャルウエハ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180104

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180104

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20180104

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20180618

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180618

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180626

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181030

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20181108

R150 Certificate of patent or registration of utility model

Ref document number: 6434313

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250