JP6432280B2 - Method for manufacturing light emitting device - Google Patents

Method for manufacturing light emitting device Download PDF

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JP6432280B2
JP6432280B2 JP2014217010A JP2014217010A JP6432280B2 JP 6432280 B2 JP6432280 B2 JP 6432280B2 JP 2014217010 A JP2014217010 A JP 2014217010A JP 2014217010 A JP2014217010 A JP 2014217010A JP 6432280 B2 JP6432280 B2 JP 6432280B2
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electrode
layer
light
wire
emitting device
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JP2016086047A (en
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米田 章法
章法 米田
善之 粟飯原
善之 粟飯原
伸治 中村
伸治 中村
章喜 木内
章喜 木内
一樹 樫本
一樹 樫本
博凡 佐々
博凡 佐々
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日亜化学工業株式会社
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  The present invention relates to a method for manufacturing a light emitting device.

A light-emitting device using a semiconductor chip (light-emitting element) such as a light-emitting diode is widely used because it can be easily downsized and high light emission efficiency can be obtained.
A light emitting device using a semiconductor chip is roughly classified into a face-up type in which a surface on which a pad electrode is provided on the semiconductor chip is a surface opposite to the mounting substrate, and a lower surface of the semiconductor chip that is a surface facing the mounting substrate. There are two types of face-down type with electrodes.

  For example, Patent Document 1 discloses a light emitting device in which a light emitting portion including a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer is provided on one surface of a silicon substrate. In the light emitting device disclosed in Patent Document 1, an electrode formed on a light emitting portion provided on one surface of a silicon substrate penetrates a silicon substrate with a terminal portion provided on the other surface of the silicon substrate. It is connected by the metal pillar provided in this way. In the light emitting device of Patent Document 1, the metal pillar is formed by forming a through hole in a silicon substrate and embedding copper, for example.

JP 2013-201156 A

  However, the light emitting device disclosed in Patent Document 1 needs to form a through hole in a silicon substrate and bury copper, and there is a concern that the manufacturing process is complicated and mass productivity is low.

  Therefore, an object of the present invention is to provide a method for manufacturing a light-emitting device with high mass productivity.

In order to achieve the above object, a method for manufacturing a light emitting device according to an embodiment of the present invention includes:
A semiconductor layer forming step of forming a semiconductor layer including an n-type semiconductor layer and a p-type semiconductor layer on the substrate;
An electrode forming step of forming an n-electrode connected to the n-type semiconductor layer on the semiconductor layer and a p-electrode connected to the p-type semiconductor layer;
A connecting step of connecting a wire to each of the n electrode and the p electrode;
An adhesion layer forming step of forming an adhesion layer on the wire surface;
A resin layer forming step of forming a resin layer on the semiconductor layer so as to cover the wire;
A removing step of removing a part of the resin layer so that a part of the wire is exposed;
It is characterized by including.

  According to the method for manufacturing a light emitting device of the embodiment according to the present invention configured as described above, a method for manufacturing a light emitting device with higher mass productivity can be provided.

It is a typical top view of the light-emitting device of Embodiment 1 concerning the present invention. It is typical sectional drawing about the 1B line | wire of FIG. 1A. In the method for manufacturing a light emitting device according to the first embodiment of the present invention, a semiconductor stacked body is grown to have a four-layer structure of a first diffusion layer 21a, a second diffusion layer 21b, a third diffusion layer 21c, and a fourth diffusion layer 21d. FIG. 6 is a schematic cross-sectional view after forming the electrode layer and separating the electrode layer for each element formation region. In the manufacturing method of the light emitting device of Embodiment 1, it is a schematic cross-sectional view after forming covered electrodes 21e that respectively cover the electrode layers having a four-layer structure separated for each element formation region. In the method for manufacturing the light emitting device according to the first embodiment, the p-type semiconductor layer 13 and the light-emitting layer are left in the element formation regions, leaving the p-type semiconductor layer 13 and the light-emitting layer 12 immediately below the diffusion electrode 21 and the periphery thereof. It is a typical sectional view after removing 12. In the method for manufacturing the light emitting device of Embodiment 1, for each element formation region, an exposed portion of the n type semiconductor layer 11 is formed around the p type semiconductor layer 13 and the light emitting layer 12 in each element formation region. 2 is a schematic cross-sectional view after separating an n-type semiconductor layer 11. FIG. In the manufacturing method of the light emitting device of Embodiment 1, an insulating film having an opening 31 for exposing a part of the surface (upper surface) of the diffusion electrode 21 and an opening 32 for exposing the n-type semiconductor layer 11 for each element formation region It is typical sectional drawing after forming 30. FIG. 5 is a schematic cross-sectional view after forming a p-pad electrode 23 and an n-side electrode 40 having the same layer configuration in the method for manufacturing a light-emitting device of Embodiment 1. FIG. In the manufacturing method of the light-emitting device of Embodiment 1, it is typical sectional drawing after connecting between the p pad electrode 23 and the n side electrode 40 by the wire in each element formation area, respectively. 4 is a schematic cross-sectional view after the adhesion layer 1 is formed on the surface of the wire 56 in the method for manufacturing the light emitting device of Embodiment 1. FIG. 6 is a schematic cross-sectional view after forming a resin layer 70 so as to cover the entire light emitting element portion and embed a wire 56 in the method for manufacturing the light emitting device of Embodiment 1. In the manufacturing method of the light-emitting device of Embodiment 1, it is typical sectional drawing after removing the resin layer 70 from the upper surface to predetermined depth. FIG. 5 is a schematic cross-sectional view after forming a p-side connection electrode 50 and an n-side connection electrode 60 in the method for manufacturing the light emitting device of Embodiment 1. FIG. 5 is a schematic cross-sectional view after removing a growth substrate 90 in the method for manufacturing a light-emitting device of Embodiment 1. 4 is a schematic cross-sectional view after forming a phosphor layer 80 on the lower surface of an n-type semiconductor layer 11 in the method for manufacturing a light emitting device of Embodiment 1. FIG. In the manufacturing method of the light-emitting device of Embodiment 1, it is typical sectional drawing when dividing | segmenting for every element area | region. It is typical sectional drawing of the light-emitting device of Embodiment 2 which concerns on this invention. 4 is a schematic cross-sectional view showing a cross section orthogonal to the cross section shown in FIG. In the manufacturing method of Embodiment 2, it is typical sectional drawing after connecting a ribbon-shaped wire. In the manufacturing method of Embodiment 2, it is typical sectional drawing after forming an adhesion layer. In the manufacturing method of Embodiment 2, it is typical sectional drawing after forming a resin layer.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating a specific direction and position (for example, “up”, “down”, “right”, “left” and other terms including those terms) are used as necessary. These terms are used for easy understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. Moreover, the part of the same code | symbol which appears in several drawing shows the same part or member.

Embodiment 1. FIG.
As shown in FIG. 1A, in the light emitting device according to the first embodiment, the semiconductor laminated body constituting the light emitting portion is embedded in the resin layer 70 together with the electrodes and the wiring, and the p-side connection electrode is formed on the outer surface (mounting surface) of the resin layer 70. 50 and an n-side connection electrode 60. The size of the light emitting device may be, for example, 800 μm long × 300 μm wide × 350 μm high, or 1 mm long × 1 mm wide × 350 μm high, but may be other than that.

  Hereinafter, the internal structure of the light emitting device of Embodiment 1 will be described in detail with reference to FIG. 1B.

The semiconductor stacked body 10 constituting the semiconductor stacked body light emitting section includes an n-type semiconductor layer 11, a light emitting layer 12, and a p-type semiconductor layer 13. Further, a phosphor layer 80 can be provided under the semiconductor stacked body 10.

A p-side electrode 20 is provided on the electrode structure p-type semiconductor layer 13.
As the p-side electrode 20, various shapes can be used. For example, the p-side electrode 20 can include a diffusion electrode 21 formed on substantially the entire surface of the p-type semiconductor layer 13 and a p-pad electrode 23 formed on a part of the diffusion electrode 21.
The diffusion electrode 21 includes a first diffusion layer 21a in ohmic contact with the p-type semiconductor layer 13, a second diffusion layer 21b formed on the first diffusion layer 21a, and a third diffusion layer formed on the second diffusion layer 21b. Covering the diffusion layer 21c, the fourth diffusion layer 21d formed on the third diffusion layer 21c, the first diffusion layer 21a, the second diffusion layer 21b, the third diffusion layer 21c, and the fourth diffusion layer 21d The electrode 21e can be included.
The p-pad electrode 23 may include a p-pad first layer 23a, a p-pad second layer 23b, a p-pad third layer 23c, a p-pad fourth layer 23d, and a p-pad fifth layer 23e. 30 is provided so as to be connected to the diffusion electrode 21 through an opening 31 formed in the substrate 30.

As the n-side electrode 40, various shapes can be used. For example, when the p-side electrode 20 has the shape as described above, the n-side electrode 40 is an insulation provided to electrically separate the n-side electrode 40 from the p-side electrode 20 and the p-type semiconductor layer 13. It is provided on the film 30 and can be connected to the n-type semiconductor layer 11 through an opening 32 formed in the insulating film 30.
Specifically, for example, the insulating film 30 having the opening 32 on the n-type semiconductor layer 11 covers the covered electrode 21e and the semiconductor stacked body 10 except for the p pad electrode 23 and the vicinity of the p pad electrode 23. And an n-side electrode 40 connected to the n-type semiconductor layer 11 through the opening 32 is formed. The n-side electrode 40 includes an n-side electrode first layer 40a formed on the insulating film 30, an n-side electrode second layer 40b formed on the n-side electrode first layer 40a, and an n-side electrode first layer. The third layer 40c, the fourth n-side electrode layer 40d, and the fifth n-side electrode layer 40e are formed so as to cover the entire insulating film 30 except for the periphery of the p-pad electrode 23 and the p-pad electrode 23.
Hereinafter, a portion constituted by the semiconductor stacked body 10, the p-side electrode 20, and the n-side electrode 40 is referred to as a light emitting element portion.

The wiring structure p-pad electrode 23 is connected to the p-side connection electrode 50 by the wire 5 embedded in the resin 70. One end of the wire 5 forms a ball portion 5 a and is connected to the p pad electrode 23, and the other end of the wire 5 can be connected to a p-side connection electrode 50 provided on the upper surface of the resin 70.
The n-side electrode 40 is connected to the n-side connection electrode 60 by the wire 6 embedded in the resin 70. For example, one end of the wire 6 is connected to the n-side electrode 40 at a position above the diffusion electrode 21 by thermocompression bonding or the like. When one end of the wire 6 is connected to the n-side electrode 40 at a position above the diffusion electrode 21, the wire bonding position at one end of the wire 6 and the wire bonding position at one end of the wire 5 are substantially reduced. Can be made the same height. The other end of the wire 6 is connected to an n-side connection electrode 60 provided on the upper surface of the resin 70.
Further, instead of the above, the ball portion 5 a may be formed on the n-side electrode 40. Alternatively, as the wires 5 and 6, a ribbon-like wire without the ball portion 5a may be used.
The p-side connection electrode 50 and the n-side connection electrode 60 are provided on the upper surface of the resin 70 so as to be electrically separated.
In the light emitting device according to the first embodiment, the adhesion layer 1 is formed on the surface of the portion of the wire 5 embedded in the resin 70 and the surface of the portion of the wire 6 embedded in the resin 70. The bonding force between the resin 70 and the resin 70 is increased. The adhesion layer 1 has a higher adhesion to the resin 70 than the wires 5 and 6, for example, an oxide such as SiO 2 , Al 2 O 3 , TiO 2 , Nb 2 O 5 , HfO 2 , ZrO 2 , or the like It is formed of a metal such as Cu, Ni, Ti, AlSiCu, AlCu, W, or Mo. The adhesion layer 1 may be composed of a single layer or a plurality of layers. When the adhesion layer 1 is composed of a plurality of layers, the lower layer is preferably formed of a material having good adhesion with the wire 5 and the upper layer is preferably formed of a material having good adhesion with the resin 70. For example, Ti / SiO 2 , Ni / SiO 2 , Ti / TiO 2 and the like. The thickness of the adhesion layer 1 is preferably 0.02 μm or more and 1 μm or less, more preferably 0.02 μm or more and 0.09 μm or less in the case of a single layer, or 0.04 μm or more and 1 μm or less in the case of a multilayer. .

In the light emitting device according to the first embodiment configured as described above, the adhesion layer 1 is formed on the surfaces of the wires 5 and 6, thereby suppressing peeling between the wires 5 and 6 and the resin layer 70 in the manufacturing process described later. Manufacturing yield can be improved.
Further, since the adhesion layer 1 is formed on the surface of the portion of the wire 5 embedded in the resin 70 and the surface of the portion of the wire 6 embedded in the resin 70, the interface between the wires 5 and 6 and the resin layer 70 is formed. Invasion of corrosive gas, moisture, or a conductive member such as solder used when the light emitting element is mounted can be suppressed, and deterioration of the light emitting element portion and current leakage can be suppressed. Here, it is preferable that the adhesion layer 1 continuously covers the surfaces of the p-side electrode 20 and the n-side electrode 40 from the surfaces of the wires 5 and 6, thereby more effectively deteriorating the light emitting element portion. Can be suppressed.

Hereinafter, the manufacturing method of the light-emitting device of Embodiment 1 which concerns on this invention is demonstrated.
In the method for manufacturing a light emitting device according to Embodiment 1, a plurality of light emitting devices are collectively manufactured and then divided into individual light emitting devices.
In the semiconductor layer forming step , as shown in FIG. 2A, on the growth substrate 90 made of, for example, sapphire, the n-type semiconductor layer 11 made of, for example, an n-type nitride semiconductor, for example, nitride containing In A semiconductor stacked body 10 is formed by growing a light emitting layer 12 made of a semiconductor, for example, a p-type semiconductor layer 13 made of a p-type nitride semiconductor. Here, the nitride semiconductor is a semiconductor represented by a general formula In X Al Y Ga 1-XY N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1). However, the present invention is not limited to the formation of the n-type semiconductor layer 11, the light emitting layer 12, and the p-type semiconductor layer 13 from a nitride semiconductor, but other semiconductor materials such as AlInGaP, AlGaAs, and GaP. It may be formed.

In the electrode forming step , first, the diffusion electrodes 21 are formed on the p-type semiconductor layer 13 in the element forming regions corresponding to the respective light emitting devices.
When the diffusion electrode 21 is formed on the p-type semiconductor layer 13 made of a p-type nitride semiconductor, for example, the diffusion electrode 21 is formed as follows.
First, a first diffusion layer 21a made of, for example, Ag is formed on almost the entire surface of the p-type semiconductor layer 13, and a second diffusion layer 21b made of, for example, Ni is formed on the first diffusion layer 21a. For example, a third diffusion layer 21c made of Ti is formed on the second diffusion layer 21b, and a fourth diffusion layer 21d made of Ru is formed on the third diffusion layer 21c. At this stage, an electrode layer having a four-layer structure including the first diffusion layer 21a, the second diffusion layer 21b, the third diffusion layer 21c, and the fourth diffusion layer 21d is formed on almost the entire surface of the p-type semiconductor layer 13. Yes.

  Next, as shown in FIG. 2A, a four-layer electrode layer is separated for each element formation region, and as shown in FIG. 2B, a four-layer electrode layer separated for each element formation region is formed. A covered electrode 21e is formed so as to cover each.

Next, the n-type semiconductor layer 11 is exposed for each element formation region.
Specifically, first, as shown in FIG. 2C, in each element formation region, the p-type semiconductor layer 13 and the light-emitting layer 12 are left directly under the diffusion electrode 21 and in the periphery thereof, respectively. The light emitting layer 12 is removed. At this time, part of the n-type semiconductor layer 11 may also be removed.
Further, as shown in FIG. 2D, n is formed for each element formation region so that an exposed portion of the n-type semiconductor layer 11 is formed around the p-type semiconductor layer 13 and the light emitting layer 12 in each element formation region. The type semiconductor layer 11 is separated.

  Next, as shown in FIG. 2E, an insulating film 30 having an opening 31 for exposing a part of the surface (upper surface) of the diffusion electrode 21 and an opening 32 for exposing the n-type semiconductor layer 11 for each element formation region. Form. The insulating film 30 is formed on the diffusion electrode 21 excluding the opening 31, on the n-type semiconductor layer 11 excluding the opening 32, and on the growth substrate 90.

Next, as shown in FIG. 2F, a p-pad electrode 23 and an n-side electrode 40 having the same layer configuration are formed.
In the case of a light emitting device including a semiconductor stacked structure having a p-type semiconductor layer 13 made of a p-type nitride semiconductor and an n-type semiconductor layer 11 made of an n-type nitride semiconductor, for example, a p-pad electrode is formed as follows. 23 and the n-side electrode 40 are formed.
First, a first layer 23a (40a) made of, for example, AlSiCu is formed on the entire surface of the insulating layer 30 so as to be in contact with the diffusion electrode 21 through the opening 31 and in contact with the n-type semiconductor layer 11 through the opening 32. Second layer 23b (40b) made of Ti, for example, third layer 23c (40c) made of Pt, for example, fourth layer 23d (40d) made of Au, for example, fifth layer 23e (40e) made of Ni , And an electrode layer having a five-layer structure is formed.

Next, the p-pad electrode 23 and the n-side electrode 40 are separated.
Specifically, the p-pad electrode 23 is formed inside the opening 31 by removing the electrode layer having a four-layer structure on both sides of the end of the opening 31 to a predetermined width. The n-side electrode 40 is formed so that the inner peripheral end portion of the n-side electrode 40 surrounding the p-pad electrode 23 is formed at a position away from the outside. As described above, the p-pad electrode 23 and the n-side electrode 40 are separated. In addition, after forming the resist pattern which has an opening part in the part which forms the p pad electrode 23 and the n side electrode 40, the electrode is formed into a film from the resist pattern and the separated p pad electrode 23 is performed by performing lift-off. The n-side electrode 40 may be formed. Hereinafter, a region that separates the p-pad electrode 23 and the n-side electrode 40 is referred to as a separation region.

Wire Connection Step Next, as shown in FIG. 2G, the p pad electrode 23 and the n-side electrode 40 are connected by wires in each element formation region.
Specifically, a melted ball is formed at one end of the wire 56 and connected to the p-pad electrode 23 to extend the wire 56 into a predetermined shape. Alternatively, pressure can be applied to connect to the n-side electrode 40. As the wire 56, for example, a material mainly made of Au, Cu, Al or the like, or a wire whose surface is coated with Ag or the like can be used. When Au is used as the main material of the wire 56, a part of the fifth layer 23e (40e) made of Ni is partially removed to expose the fourth layer 23d (40d) made of Au, and the wire is exposed to the exposed fourth layer. 56 are preferably connected. By doing so, the adhesiveness of the wire 56 and the n side electrode 40 can be improved. Further, when Cu is used as the main material of the wire 56, it is preferable to use Cu as the fifth layer 23e (40e) because the adhesion between the wire 56 and the n-side electrode 40 can be improved.

  In this wire connection step, for example, a conventional bonding machine including a capillary for supplying the wire 56 can be used. Specifically, after forming a molten ball at one end of the wire 56 protruding from the capillary and connecting it to the p-pad electrode 23, the capillary for supplying the wire 56 is moved so as to have a desired wire shape. The other end of the wire 56 formed into a shape is connected to the n-side electrode 40 and separated from the capillary. For example, when forming a right-angled bend, move the capillary in the direction opposite to the direction you want to bend the wire, make a crease in the wire, and then move the capillary in the direction you want to bend. A bent portion can be formed. In the drawing, the wire is depicted as being bent at a right angle, but such a shape is not necessarily required. The shape of the wire may be, for example, an arch shape.

Adhesion layer formation step Next, as shown in FIG. 2H, forming the adhesion layer 1 on the surface of the wire 56.
The adhesion layer 1 is formed of, for example, an oxide such as SiO 2 , TiO 2 , or Al 2 O 3 that has higher adhesion to the resin material constituting the resin layer 70 than the metal material constituting the wire 56. The adhesion layer 1 may be formed of a metal having higher adhesion to the resin material constituting the resin layer 70 than the metal material constituting the wire 56. For example, when the wire 56 is made of Au, Cu, Ni, Ti, AlSiCu (ASC), AlCu, W, Mo, and the like are listed as metals having higher adhesion to the resin material than Au. The adhesion layer 1 may be formed of a nitride semiconductor such as SiN or GaN. When the adhesion layer 1 is formed of a conductive material, after the p pad electrode 23 and the n side electrode 40 are formed, a resist is formed in a separation region between the p pad electrode 23 and the n side electrode 40, and then the p pad electrode 23. It is preferable to connect the wire 56 to the n-side electrode 40 and form a metal adhesion layer on the wire surface, and then remove the resist in the separation region. By forming by this method, the adhesion layer is separated by the resist on the separation region, so that even when a metal is used for the adhesion layer, the adhesion layer can be prevented from being short-circuited.

  As a method for forming the adhesion layer 1, various methods capable of forming a film using the above materials can be applied. Chemical vapor deposition methods such as plasma CVD, atomic layer deposition (ALD) It is preferable to form the adhesion layer 1 using A chemical vapor deposition method such as plasma CVD can form the adhesion layer 1 on the back side of the wire 56 or in a narrow gap as long as the source gas is supplied. In addition, since atomic layer deposition (ALD) can control growth at the level of one atomic layer, the adhesion layer 1 can be formed with a uniform film thickness, and the atomic layers are stacked one by one. Thus, the dense adhesion layer 1 can be formed while suppressing the occurrence of cracks, defects, pinholes, and the like.

  As shown in FIG. 2H, the adhesion layer 1 is preferably formed not only on the surface of the wire 56 but also on the entire upper surface of the light emitting element portion including the p-pad electrode 23 and the n-side electrode 40. By forming the adhesion layer 1 with a material having high adhesion to the resin, the wettability of the adhesion layer 1 with respect to the resin is increased, so that the injection or inflow of the resin during the resin layer formation described below can be facilitated, and The adhesion between the light emitting element portion and the resin layer can be increased.

Further, the n-side electrode 40 may be partially provided only on the n-side semiconductor layer 11 exposed from the p-side semiconductor layer 13 and the active layer 12. In that case, the wire 56 is formed after the n-side electrode 40 is formed, and an adhesion layer is formed on the wire surface. At this time, the adhesion layer 1 is made of a highly reflective material such as a distributed Bragg reflection film in which, for example, SiO 2 and Nb 2 O 5 are alternately laminated, and not only the surface of the wire 56 but also the p pad electrode 23, It is preferable to form the entire surface of the light emitting element portion including the n-side electrode 40. If it does in this way, an adhesion layer can play the role of insulating film 30 which covers the semiconductor layered product upper part. Furthermore, by reflecting the light toward the upper surface of the light emitting element portion of the light emitted from the light emitting element portion by the adhesion layer 1, for example, when the resin layer 70 contains a filler to be described later, the light absorption by the resin layer 70 is reduced, Light can be extracted to the outside through the phosphor layer 80. As a result, the light extraction efficiency can be further increased as the light emitting device.

Further, in the case of a so-called face-up type light-emitting device that extracts light from the p-pad electrode 23 and the n-side electrode 40 side, the adhesion layer 1 is made of a reflective film that effectively reflects the light emitted from the light-emitting element portion. For example, the adhesion layer 1 is formed of AlCu, AlSiCu, or a distributed Bragg reflection film. Thereby, the light propagated in the direction opposite to the light extraction direction can be reflected and extracted by the adhesion film, and the light extraction efficiency can be increased.
That is, a light-emitting device that extracts light from the p-pad electrode and n-side electrode side includes, for example, a translucent electrode made of ITO or the like formed on almost the entire surface of the p-type semiconductor layer, and the upper surface of the translucent electrode. A p-pad electrode is formed on the part, and light is extracted through the translucent electrode. At that time, if an adhesion layer is formed on the surface of the wire connected to the p-pad electrode and the n-side electrode with a material having high reflectivity and good adhesion to the resin, light is reflected on the surface of the wire and taken out. In other words, the light can be extracted without being absorbed by the wire, and the light extraction efficiency can be increased. The distributed Bragg reflection film is a multilayer film in which a film made of a material of a low refractive index film and a film made of a material of a high refractive index film are alternately laminated. Examples of the material of the low refractive index film include SiO 2. Examples of the material for the high refractive index film include TiO 2 , ZrO 2 , Nb 2 O 5 , Al 2 O 3, and the like. All of the materials listed above are materials having good adhesion to the resin.

Resin Layer Formation Step Next, as shown in FIG. 2I, a resin layer 70 is formed so as to cover the entire light emitting element portion and embed the wires 56 therein. The resin layer 70 can be made of various resins, but preferably, a silicone resin, an epoxy resin, or the like is used. Further, the resin layer 70 may contain a filler. Examples of the filler material include C, SiO 2 and TiO 2 . When TiO 2 is contained as a filler, light emission can be reflected by the resin layer 70, which is preferable.
The resin layer 70 can be formed by placing the light emitting element portion after the wires 56 are connected together with the growth substrate 90 in a mold and performing compression molding.

Resin Layer Removal Step Next, as shown in FIG. 2J, the resin layer 70 is removed from the upper surface by grinding, polishing or cutting.
In the resin layer 70, as shown in FIG. 2J, the wire 56 that connected the p-pad electrode 23 and the n-side electrode 40 is separated to become the wire 5 and the wire 6, and the p-side connection electrode 50 is formed from the upper surface of the resin layer 70. And the ends of the wires 56 connected to the n-side connection electrode 60 are removed until they are exposed.

The connection electrode formation step Next, as shown in FIG. 2K, forming the p-side connecting electrode 50 and the n-side connecting electrode 60.
Each of the p-side connection electrode 50 and the n-side connection electrode 60 includes a connection electrode first layer 61 and 71 made of, for example, Ni, and a connection electrode second layer 62 and 72 made of, for example, Au. The p-side connection electrode 50 and the n-side connection electrode 60 are connected to the ends of the wires 5 and 6, respectively.

Growth substrate removal Next, as shown in FIG. 2L, for example, removing the growth substrate 90 by laser lift-off (LLO) method. Thereafter, the surface of the semiconductor stacked body 10 may be provided with unevenness by a wet etching method using an etchant such as an aqueous KOH solution.

Phosphor layers formed Then, as shown in FIG. 2M, to form the phosphor layer 80 on the lower surface of the n-type semiconductor layer 11.
The phosphor layer 80 can be formed, for example, by performing compression molding using a resin including the phosphor layer.
The phosphor layer 80 can be formed of various phosphor materials that can be used in a light emitting device using a light emitting diode. For example, in a light-emitting device including a light-emitting element that emits blue light, preferred phosphors include silicate phosphors such as YAG phosphors and chlorosilicate phosphors that emit green and / or yellow, and red light. One or more types selected from SCASN phosphors such as (Sr, Ca) AlSiN 3 : Eu and CASN phosphors such as CaAlSiN 3 : Eu can be exemplified.
Before forming the phosphor layer 80, the lower surface of the n-type semiconductor layer 11 is preferably roughened by wet etching or the like.

The separation step Finally, as shown in FIG. 2N, along the separation line C1, to divide each element region. As described above, the light-emitting device of Embodiment 1 is manufactured.

In the method of manufacturing the light emitting device according to the first embodiment of the present invention configured as described above, after forming the adhesion layer 1 on the surface of the wire 56, the resin layer 70 is formed so that the wire 56 is embedded. Therefore, the bonding force between the resin layer 70 and the wire 56 can be increased.
Therefore, according to the method for manufacturing the light emitting device of Embodiment 1, even when the resin layer 70 is removed by, for example, grinding, polishing, or cutting in the resin layer removing step, the separation between the resin layer 70 and the wire 56 is suppressed. The light emitting device can be manufactured with high yield. Further, by suppressing the peeling between the resin layer 70 and the wire 56, a conductive member such as corrosive gas, moisture, or solder used when mounting the light emitting element from the interface between the wires 5, 6 and the resin layer 70. Or the like can be suppressed, and deterioration of the light emitting element portion and current leakage can be suppressed.
Therefore, according to the method for manufacturing a light emitting device of Embodiment 1, a method for manufacturing a light emitting device with high productivity can be provided.

In the light emitting device manufacturing method of the first embodiment described above, in the wire connection step, the p pad electrode 23 and the n-side electrode 40 are connected by wires in each element formation region.
However, the present invention is not limited to this. For example, in the wire connection process, one end of the wire is used as an n-side electrode or a p-pad electrode formed in one of adjacent element formation regions. The other end may be connected to an n-side electrode or a p-pad electrode formed in the other of the adjacent element formation regions. Further, the other end of the wire having one end connected to the p pad electrode 23 and the n side electrode 40 may be embedded in the resin layer 70 without being connected to the other p pad electrode 23 or the n side electrode 40. .

Embodiment 2. FIG.
As shown in FIGS. 3 and 4, the light-emitting device of Embodiment 2 according to the present invention is replaced by wires 7 and 8 having a cross-sectional area larger than that of the wires 5 and 6 instead of the wires 5 and 6 of the light-emitting device of Embodiment 1. It is comprised similarly to the light-emitting device of Embodiment 1 except the point comprised using this. Here, as will be described later, the wires 7 and 8 are manufactured using, for example, ribbon-shaped wires.
Here, FIG. 4 shows two light emitting devices that are orthogonal to the cross section shown in FIG. 3 and are adjacent to each other before being divided into individual light emitting devices. The wires 7 and 8 are preferably made of a material having good electrical conductivity and thermal conductivity. Examples of such a material include Au, Cu, Al, and alloys containing these metals as main components. Etc.
The light emitting device of the second embodiment configured as described above has the same operational effects as those of the first embodiment, and further uses the wires 7 and 8 having a large cross-sectional area, so that the wiring resistance can be reduced and Good heat dissipation.

Hereinafter, the manufacturing method of the light emitting device of the second embodiment will be described focusing on differences from the manufacturing method of the first embodiment.
FIG. 5A is a cross-sectional view schematically showing a cross-section after connecting the ribbon-shaped wire, FIG. 5B is a cross-sectional view schematically showing a cross-section after forming the adhesion layer, and FIG. It is sectional drawing which shows typically the cross section after forming the resin layer. Here, FIG. 5A to FIG. 5C show a cross section orthogonal to the cross section shown in FIG. 3 across two adjacent light emitting devices, as in FIG.

In the method for manufacturing the light emitting device according to the second embodiment, the p-side electrode 20 including the p-pad electrode and the n-side electrode 40 are formed on the semiconductor multilayer structure through the semiconductor layer forming step and the electrode forming step as in the first embodiment. Form. As the fifth layer 23e, which is the uppermost layer of the p-pad electrode 20, it is necessary to select an optimum material depending on the material of the wire 81 described later. For example, when the material of the ribbon-shaped wire 81 is an Al-based metal, it is preferable to use Al or Cu as the fifth layer 23e from the viewpoint of bondability.
Next, as shown in FIG. 5A, in the light emitting devices formed side by side, the n-side electrodes 40 of the adjacent light emitting devices are sequentially connected by ribbon-like wires 81 and similarly arranged in the horizontal direction. In the light emitting device formed in step 1, the p-side electrode 20 of the adjacent light emitting device is sequentially connected by a ribbon-like wire. Here, the horizontal direction means a direction orthogonal to the cross section shown in FIG.
Thus, when wiring a ribbon-like wire having a large cross-sectional area while being bent or bent, it is preferable to use relatively soft Al, Au, Cu, or an alloy containing these metals as a main component.

Further, the cross-sectional shape of the ribbon-like wire used for forming the wires 7 and 8 is not particularly limited, and may be, for example, an ellipse, but by using a wire having a rectangular cross-sectional shape, p Since the contact area with the side electrode 20 and the n side electrode 40 can be enlarged, it is preferable. Thereby, the contact resistance between the wires 7 and 8 and the p-side electrode 20 and the n-side electrode 40 can be lowered, and the bonding force can be increased.
Furthermore, by using a wire having a rectangular cross-sectional shape, a load can be evenly applied to a wide range with respect to the p-side electrode 20 and the n-side electrode 40 during wire bonding. The impact on the side electrode 40 and the semiconductor laminate can be reduced.
Further, the cross-sectional shape of the ribbon-like wire is appropriately set according to the size of the light emitting device, and for example, an Al wire having a rectangular cross-sectional shape having a size of about 1000 μm × 500 μm can be used.

Next, as shown in FIG. 5B, the ribbon-shaped wire 81 connecting the n-side electrodes 40 of the adjacent light-emitting devices and the surface of the ribbon-shaped wire connecting the p-side electrodes 20 of the adjacent light-emitting devices are in close contact with each other. Layer 1 is formed.
Although various methods can be applied as a method for forming the adhesion layer 1, it is preferable to form the adhesion layer 1 using a chemical vapor deposition method such as plasma CVD or an atomic layer deposition method (ALD). In particular, in the second embodiment, the ribbon-shaped wires are used to connect the n-side electrodes 40 and the p-side electrodes 20 of the adjacent light emitting devices. It is preferable to form the contact layer 1 using an atomic layer deposition method (ALD) that can form a uniform thickness.

  As shown in FIG. 5B, the adhesion layer 1 is preferably formed not only on the surface of the ribbon-shaped wire but also on the entire upper surface of the light emitting element portion including the p-pad electrode 23 and the n-side electrode 40.

Next, as shown in FIG. 5C, in the same manner as in the first embodiment, the resin layer 70 is formed so as to cover the entire light emitting element portion and embed a ribbon-like wire.
Further, the resin layer 70 is removed from the upper surface to the position indicated by the broken line in FIG. 5C by grinding, polishing or cutting.
Thereafter, the light emitting device of the second embodiment shown in FIGS. 3 and 4 is manufactured in the same manner as the first embodiment.

In the manufacturing method of the semiconductor device according to the second embodiment described above, in the light emitting devices formed side by side, the n-side electrodes 40 of the adjacent light emitting devices are sequentially connected by the ribbon-shaped wire 81, and the adjacent light emitting devices. The p-side electrodes 20 were sequentially connected by ribbon-like wires. However, the present invention is not limited to this, and the n-side electrode 40 and the p-side electrode 20 may be connected by a ribbon-like wire in one element, and are adjacent in the vertical direction. Including the light emitting devices, the n-side electrode 40, the p-side electrode 20, the n-side electrode 40, the p-side electrode 20.

DESCRIPTION OF SYMBOLS 1 Adhesion layer 5, 6, 7, 8 Wire 5a, 6a Metal ball 10 Semiconductor laminated body 11 N type semiconductor layer 12 Light emitting layer 13 P type semiconductor layer 20 P side electrode 21 Diffusion electrode 21a 1st diffusion layer 21b 2nd diffusion layer 21c 3rd diffused layer 21d 4th diffused layer 21e Cover electrode 23 p pad electrode 23a p pad 1st layer 23b p pad 2nd layer 23c p pad 3rd layer 23d p pad 4th layer 23e p pad 5th layer 30 insulating film 31 opening 40 n-side electrode 40a n-side electrode first layer 40b n-side electrode second layer 40c n-side electrode third layer 40d n-side electrode fourth layer 40e n-side electrode fifth layer 50 p-side connection electrode 60 n-side Connection electrode 70 Resin layer 80 Phosphor layer 81 Ribbon-shaped wire

Claims (10)

  1. Forming a semiconductor layer including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on the substrate;
    An electrode forming step of forming an n-electrode connected to the n-type semiconductor layer on the semiconductor layer and a p-electrode connected to the p-type semiconductor layer;
    Forming a resist in a separation region between the n-electrode and the p-electrode;
    A connecting step of connecting a wire to each of the n electrode and the p electrode;
    An adhesion layer forming step of forming an adhesion layer containing metal on the wire surface;
    A resist removing step of removing the resist after forming the adhesion layer;
    A resin layer forming step of forming a resin layer on the semiconductor layer so as to cover the wire;
    A removing step of removing a part of the resin layer so that a part of the wire is exposed;
    A method for manufacturing a light-emitting device including:
  2.   The light emitting device manufacturing method according to claim 1, wherein one end of the wire is connected to the n electrode and the other end is connected to the p electrode.
  3. A method for manufacturing a plurality of light emitting devices by the manufacturing method according to claim 1,
    Forming an n-electrode connected to the n-type semiconductor layer and a p-electrode connected to the p-type semiconductor layer in a region corresponding to each light-emitting device in the electrode forming step;
    In the connecting step, one end of the wire is connected to an n-electrode or a p-electrode formed in one of the adjacent regions, and the other end is formed in the other region of the adjacent regions. Manufacturing method of light-emitting device connected to n electrode or p electrode.
  4. A method for manufacturing a plurality of light emitting devices by the manufacturing method according to claim 1,
    Forming an n-electrode connected to the n-type semiconductor layer and a p-electrode connected to the p-type semiconductor layer in a region corresponding to each light-emitting device in the electrode forming step;
    A method of manufacturing a light-emitting device, wherein in the connecting step, n-side electrodes of adjacent light-emitting devices are sequentially connected by wires, and p-side electrodes of adjacent light-emitting devices are sequentially connected by wires.
  5.   The manufacturing method of the light-emitting device according to claim 1, wherein the adhesion layer is formed on the surface of the semiconductor layer together with the surface of the wire.
  6.   The method for manufacturing a light-emitting device according to claim 1, wherein the adhesion layer is formed by atomic layer deposition or chemical vapor deposition.
  7.   The manufacturing method of the light-emitting device according to claim 1, wherein a part of the resin layer is removed by grinding the resin layer from a surface.
  8.   The manufacturing method of the light-emitting device according to claim 1, wherein the adhesion layer is formed of a reflective film that reflects light emitted from the semiconductor layer.
  9.   The method for manufacturing a light emitting device according to claim 8, wherein the reflective film is formed of a distributed Bragg reflective film.
  10.   The method for manufacturing a light emitting device according to claim 1, wherein a wire having a rectangular or elliptical cross-section is used as the wire in the connecting step.
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Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283855A (en) * 1988-05-10 1989-11-15 Nec Corp Semiconductor device
JPH01321664A (en) * 1988-06-23 1989-12-27 Nec Corp Resin sealed semiconductor device
JP2738568B2 (en) * 1989-09-06 1998-04-08 新光電気工業株式会社 Semiconductor chip module
JPH0350338U (en) * 1989-09-20 1991-05-16
JPH05299530A (en) * 1992-04-17 1993-11-12 Oki Electric Ind Co Ltd Resin sealed semiconductor device and manufacturing mehtod thereof
JP2606267Y2 (en) * 1992-10-22 2000-10-10 日本航空電子工業株式会社 Surface mount chip light emitting diode and the membrane sheet switch using the same
JPH1012769A (en) * 1996-06-24 1998-01-16 Ricoh Co Ltd Semiconductor device and its manufacture
JPH11260850A (en) * 1998-03-11 1999-09-24 Toshiba Corp Semiconductor device and its manufacture
JP2000244012A (en) * 1998-12-22 2000-09-08 Toyoda Gosei Co Ltd Manufacture of group iii nitride compound semiconductor element
KR100379835B1 (en) * 1998-12-31 2003-06-19 앰코 테크놀로지 코리아 주식회사 The semiconductor package and a method of manufacturing the same
JP2001358168A (en) * 2000-06-12 2001-12-26 Nippon Steel Corp Semiconductor device and its manufacturing method
JP2002076058A (en) * 2000-08-31 2002-03-15 Seiko Epson Corp Semiconductor chip, semiconductor device, mounting board, manufacturing method of electric equipment and semiconductor device, and attaching structure of semiconductor chip
JP4918238B2 (en) * 2005-09-13 2012-04-18 昭和電工株式会社 Light emitting device
JP4926787B2 (en) * 2007-03-30 2012-05-09 アオイ電子株式会社 Manufacturing method of semiconductor device
SG148901A1 (en) * 2007-07-09 2009-01-29 Micron Technology Inc Packaged semiconductor assemblies and methods for manufacturing such assemblies
JP5245594B2 (en) * 2007-07-27 2013-07-24 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
KR20100008620A (en) * 2008-07-16 2010-01-26 삼성전기주식회사 Light emitting device and backlight unit comprising the same
JP5413137B2 (en) * 2009-11-09 2014-02-12 日亜化学工業株式会社 Light emitting device and method for manufacturing light emitting device
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
US20130330846A1 (en) * 2012-06-12 2013-12-12 Jinbang Tang Test vehicles for encapsulated semiconductor device packages

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