JP6401444B2 - Power module and manufacturing method thereof - Google Patents

Description

  The present invention relates to a power module and a manufacturing method thereof, and more particularly, to a power module and a manufacturing method thereof, in which a metal base can be divided, the structure is simple, the manufacturing is easy, and the manufacturing reliability is high.

  Conventionally, a power module in which a power chip including a semiconductor device such as an insulated gate bipolar transistor (IGBT) is mounted on a lead frame and the entire system is molded with a resin is known (for example, a patent) Reference 1 and Patent Reference 2). Since the semiconductor device generates heat in the operating state, it is common to cool the semiconductor device by disposing a heat sink via an insulating layer on the back surface of the lead frame.

Japanese Patent No. 3201277 JP-A-2005-109100

  An object of the present invention is to provide a power module that can divide a metal base, has a simple structure, is easy to manufacture, and has high reliability at the time of manufacturing, and a manufacturing method thereof.

According to one aspect of the present invention, a first metal plate and a second metal plate each having opposite sides, a semiconductor device disposed on the first metal plate and generating heat during operation, and a surface of the semiconductor device A bonding wire that electrically connects the electrode formed on the second metal plate and a connection direction of the bonding wire between the opposing sides of the first metal plate and the second metal plate. A resin connection plate that is connected along a parallel direction and restricts movement of the first metal plate and the second metal plate in the connection direction of the bonding wire, and the resin connection plate includes the first metal plate. The first metal plate and the second metal plate are provided with convex protrusions on the side of the first metal plate and the second metal plate that face and overlap the plate and the second metal plate, respectively. Resin connection board Oppositely overlapping surfaces, each having a recess or a through hole that fits into the protrusion on the surface on which the semiconductor device is disposed, and the protrusion has a predetermined length from both ends of the resin connection plate power module that will be formed respectively on the inner side only is provided.

According to another aspect of the present invention, a step of forming a first metal plate and a second metal plate having opposite sides, and a semiconductor that generates heat during operation via solder on the surface of the first metal plate A step of arranging a device, a step of connecting the first metal plate and the second metal plate using a resin connection plate, an electrode formed on a surface of the semiconductor device, and the second metal plate. Electrically connecting via a bonding wire; molding the first metal plate and the second metal plate, the semiconductor device, the bonding wire, and the resin connection plate using a mold resin; And a step of disposing an insulating layer on the back surface of the first metal plate and the second metal plate, and the resin connection plate is formed on the sides of the first metal plate and the second metal plate facing each other. Between the Bonn Connected along a direction parallel to the connecting direction of Inguwaiya, the are arranged so as to limit the connecting direction of the first metal plate and the movement of the second metal plate of the bonding wire, the resin connecting plate, said Convex protrusions are provided on the first metal plate and the second metal plate side of the first metal plate and the second metal plate facing and overlap each other, and the first metal plate and the second metal plate Are respectively provided with recesses or through-holes that fit into the protrusions on the surface that is opposed to and overlaps with the resin connection plate and on which the semiconductor device is disposed, and the protrusions are provided at both ends of the resin connection plate. The step of connecting the first metal plate and the second metal plate using the resin connection plate is formed on the inside by a predetermined length from the portion, and the protrusion and the recess or the through hole are fitted. that having a step of Method of manufacturing a word module is provided.

  According to the present invention, it is possible to provide a power module that can be divided into metal bases, that has a simple structure, that is easy to manufacture, and that has high reliability during manufacturing, and a method for manufacturing the power module.

The typical cross-section figure of the power module which concerns on the comparative example 1. FIG. The typical cross-section figure of the power module which concerns on the comparative example 2. FIG. FIG. 6 is a schematic cross-sectional structure diagram of a power module according to Comparative Example 3. FIG. 6 is a schematic cross-sectional structure diagram of a power module according to Comparative Example 4. FIG. 10 is a schematic cross-sectional structure diagram of a power module according to Comparative Example 5. FIG. 10 is a schematic cross-sectional structure diagram of a power module according to Comparative Example 6. The typical plane structure figure of the frame structure (before semiconductor chip mounting) for creating the 2 in 1 module (2 in 1 Module) to which the power module concerning comparative example 6 is applied. The typical plane structure figure of the frame structure (after semiconductor chip mounting) for creating the two-in-one module to which the power module concerning comparative example 6 is applied. (A) Schematic cross-sectional structure diagram of power module according to embodiment, (b) Schematic cross-sectional structure diagram of power module according to embodiment mounted on heat sink, (c) Embodiment mounted on heat sink The typical cross-section figure of the power module which concerns on the modification. The typical plane structure figure of the two-in-one module (before semiconductor chip mounting) to which the power module which concerns on embodiment is applied. The typical plane structure figure of the two-in-one module (after semiconductor chip mounting) to which the power module concerning an embodiment is applied. FIG. 3 is a schematic circuit representation of a two-in-one module, which is a power module according to an embodiment in which an IGBT is applied as a semiconductor device. FIG. 11A is a schematic cross-sectional structure diagram taken along the line II of FIG. 11, and FIG. 11B is another schematic cross-sectional structure diagram taken along the line II of FIG. 11. FIG. 12 is a schematic cross-sectional structure diagram taken along line II-II in FIG. 11. The typical plane structure figure of another two-in-one module (after semiconductor chip mounting) to which the power module concerning an embodiment is applied. FIG. 15A is a schematic cross-sectional structure diagram taken along line III-III in FIG. 15, and FIG. 15B is another schematic cross-sectional structure diagram along line III-III in FIG. 15. FIG. 15A is an enlarged schematic plan view of an area A in FIG. 15, and FIG. 17B is a schematic sectional view taken along line IV-IV in FIG. It is a power module which concerns on embodiment, Comprising: (a) Typical circuit expression diagram of SiC MOSFET of 1 in 1 module (1 in 1 Module), (b) Typical circuit expression diagram of IGBT of 1 in 1 module. FIG. 3 is a detailed circuit representation of the SiC MOSFET of the one-in-one module, which is a power module according to the embodiment. It is a power module which concerns on embodiment, Comprising: (a) The typical circuit representation figure of SiC MOSFET of a 2 in 1 module, (b) The schematic circuit representation figure of IGBT of a 2 in 1 module. BRIEF DESCRIPTION OF THE DRAWINGS It is an example of the semiconductor device applied to the power module which concerns on embodiment, Comprising: (a) Typical cross-section figure of SiC insulated gate field effect transistor (MOSFET: Metal Oxide Semiconductor Field Effect Transistor), (b) Model of IGBT FIG. FIG. 4 is a schematic cross-sectional structure diagram of an SiC MOSFET including a source pad electrode SP and a gate pad electrode GP, which is an example of a semiconductor device applied to the power module according to the embodiment. FIG. 4 is a schematic cross-sectional structure diagram of an IGBT including an emitter pad electrode EP and a gate pad electrode GP, which is an example of a semiconductor device applied to the power module according to the embodiment. In the schematic circuit configuration of the three-phase AC inverter configured using the power module according to the embodiment, (a) a circuit in which a SiC MOSFET is applied as a semiconductor device and a snubber capacitor is connected between a power supply terminal PL and a ground terminal NL Configuration example, (b) A circuit configuration example in which an IGBT is applied as a semiconductor device and a snubber capacitor is connected between a power supply terminal PL and a ground terminal NL. The typical circuit block diagram of the three-phase alternating current inverter comprised using the power module which concerns on embodiment which applied SiC MOSFET as a semiconductor device. The typical circuit block diagram of the three-phase alternating current inverter comprised using the power module which concerns on embodiment which applied IGBT as a semiconductor device.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness of each component and the planar dimensions is different from the actual one. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the embodiments of the present invention include the material, shape, and structure of each component. The arrangement is not specified below. Various modifications can be made to the embodiment of the present invention within the scope of the claims.

(Comparative example)
A schematic cross-sectional structure of a power module according to Comparative Example 1 is expressed as shown in FIG.

  In the power module 20A according to Comparative Example 1, the semiconductor chip 1 is connected to the insulating substrate 3 via the under-chip solder 2 as shown in FIG. The insulating substrate 3 includes a front surface copper foil 4, a ceramic substrate 5, a land 10, and a back surface copper foil 6. The insulating substrate 3 is connected to the metal base plate 8 via the insulating substrate lower solder 7. The insulating substrate 3 can be formed by processing a commercially available DBC (Direct Bonding Copper) substrate or the like.

The emitter E (source S) side power terminal 11 is connected to the emitter electrode (source electrode) on the surface of the semiconductor chip 1 via the bonding wire (WB) 12, the land 10 and the bonding wire (WB) 9, and the collector C The (drain D) side power terminal 14 is connected to the collector electrode (drain electrode) on the back surface of the semiconductor chip 1 through the bonding wire (WB) 13, the front surface copper foil 4, and the under-chip solder 2. Here, when the semiconductor chip 1 is, for example, an IGBT, the power terminals 11 and 14 become the emitter E side power terminal 11 and the collector C side power terminal 14, and when the semiconductor chip 1 is a SiC MOSFET, the power terminals 11 and 14. Are the source S side power terminal 11 and the drain D side power terminal 14.

The current extraction from the semiconductor chip 1 is performed via the emitter E (source S) side power terminal 11 and the collector C (drain D) side power terminal 14. That is, the current extraction from the semiconductor chip 1 is performed by the collector C (drain D) side power terminal 14, the bonding wire (WB) 13, the surface copper foil 4, the solder under the chip 2, the collector electrode (drain electrode), and the emitter electrode (source). Electrode), bonding wire (WB) 9, land 10 and emitter E (source S) side power terminal 11 are used. These wires except for a part of each of the power terminals 11 and 14 are housed in a resin case 15 and insulated and sealed with a silicone gel 16.

  The thickness H1 of the power module 20A according to Comparative Example 1 is, for example, about 22 mm.

  In the power module 20 </ b> A according to the comparative example 1, heat is generated due to power loss caused by energization of the semiconductor chip 1. This heat is cooled by a cooler (not shown) via the under-chip solder 2, the front surface copper foil 4, the ceramic substrate 5, the back surface copper foil 6, the insulating substrate lower solder 7, and the metal base plate 8. Since the heat generated from the semiconductor chip 1 is cooled via these members, in the power module 20A according to the comparative example 1, the heat generated in the semiconductor chip 1 cannot be sufficiently cooled. For this reason, the amount of current that can be passed through the semiconductor chip 1 is relatively small.

  The current value that can be passed through the power module 20A is determined depending on how efficiently the heat generated in the semiconductor chip 1 can be conducted to the back surface of the power module 20A.

For example, in-vehicle power modules such as industrial robots, electric vehicles (EVs), and hybrid electric vehicles (HEVs) are desired to be miniaturized. There is a need for a power module that can conduct electricity.

  The following is a description of the structure that addresses these needs.

  A schematic cross-sectional structure of a power module according to Comparative Example 2 is expressed as shown in FIG.

  As shown in FIG. 2, the power module 20 </ b> A according to the comparative example 2 removes the metal base plate 8 and the insulating substrate lower solder 7 for connecting the metal base plate 8 from the power module 20 </ b> A (FIG. 1) according to the comparative example 1. It has a structure for achieving resistance.

  A schematic cross-sectional structure of a power module according to Comparative Example 3 is expressed as shown in FIG.

  As shown in FIG. 3, the power module 20 </ b> A according to Comparative Example 3 has a structure in which the whole is sealed with a mold resin 17 instead of the resin case 15 and the silicone gel 16 of the power module 20 </ b> A (FIG. 2) of Comparative Example 2. Have. The thermal resistance is comparable to that of the power module 20A according to Comparative Example 2 (FIG. 2).

  A schematic cross-sectional structure of a power module according to Comparative Example 4 is expressed as shown in FIG.

  As shown in FIG. 4, the power module 20 </ b> A according to the comparative example 4 has a semiconductor chip mounting lead frame 18 instead of the power terminal 14 and the emitter side power terminal 11 of the power module 20 </ b> A according to the comparative example 3 (FIG. 3). The lead frame 19 is bonded to the ceramic substrate 5. A metal plate 200 is attached to the back surface of the ceramic substrate 5. The thermal resistance itself is the same as that of the power module 20A according to Comparative Example 3 (FIG. 3), but the number of parts is reduced.

  A schematic cross-sectional structure of a power module according to Comparative Example 5 is expressed as shown in FIG.

  As shown in FIG. 5, the power module 20 </ b> A according to Comparative Example 5 is different in that an insulating sheet 21 is applied instead of the ceramic substrate 5 of the power module 20 </ b> A (FIG. 4) according to Comparative Example 4. The merit of the power module 20A according to the comparative example 5 is that it is not necessary to produce an insulating substrate made of the ceramic substrate 5. Since the thermal resistance of the insulating sheet 21 itself is higher than that of the ceramic substrate 5, there is no merit in terms of thermal resistance.

  A schematic cross-sectional structure of a power module according to Comparative Example 6 is expressed as shown in FIG.

  As shown in FIG. 6, the power module 20 </ b> B according to Comparative Example 6 includes a ceramic substrate 5 of the power module 20 </ b> A (FIG. 4) according to Comparative Example 4 and an insulating sheet 21 of the power module 20 </ b> A (FIG. 5) according to Comparative Example 5. Instead of this, an organic insulating resin layer 22 is applied.

  The thickness H2 of the power module 20B according to Comparative Example 6 is, for example, about 7.7 mm.

  The power module 20B (FIG. 6) according to the comparative example 6 has advantages that the structure is simplified and the thermal resistance is lower than that of the power module structure (FIGS. 1 to 4) using the ceramic substrate 5. Also, compared to the power module 20A (FIG. 5) according to the comparative example 5 that uses the insulating sheet 21 instead of the ceramic substrate 5 as an insulating substrate, the metal plate 200 is not necessary, so the thermal resistance is low.

  As in the power module 20A according to Comparative Examples 1 to 4 (FIGS. 1 to 4), the structure in which the hard ceramic substrate 5 is arranged in the insulating portion, or the comparison in which the metal plate 200 is arranged on the back surface, although it is not hard in itself. In the power module 20A according to Example 5 (FIG. 5), the circuit pattern on which the semiconductor chip 1 is mounted can be divided. If the surface-side chip mounting portion is arranged with a divided pattern as a circuit pattern, and the ceramic substrate 5 and the metal plate 200 are arranged thereunder, the shape can be maintained even if the surface-side pattern is divided. It is.

  On the other hand, in the power module 20B according to Comparative Example 6 (FIG. 6), the back side is an organic insulating film (organic insulating resin layer 22), which is not as hard as the ceramic substrate 5 or the metal plate 200, which is inconvenient. Arise. This inconvenience will be described with reference to FIGS. 7 and 8 below.

  A schematic planar structure of a frame structure before mounting a semiconductor chip for creating a two-in-one module (2 in 1 Module) to which the power module 20B according to Comparative Example 6 is applied is expressed as shown in FIG.

FIG. 7 shows a power module 20B (FIG. 6) according to Comparative Example 6 in which a circuit is constituted by metal plates (181, 182, 191) for driving a motor or the like. The semiconductor chip mounting lead frame (lower arm) 18 ₁ (O), the semiconductor chip mounting lead frame (upper arm) 18 ₂ (P), and the lead frame 19 (N) need to be individual parts in terms of circuit configuration. The tie bar (outside) 24 and the tie bar (inside) 25 formed on the frame 23 are integrally formed. The tie bar (outer) 24 and tie bar (inner) 25 are made of a semiconductor chip mounting lead frame (lower arm) 18 ₁ (O), a semiconductor chip mounting lead frame (upper arm) 18 ₂ (P), and a lead frame 19 ( N) and is produced by stamping by pressing. Here, the semiconductor chip mounting lead frame (lower arm) 18 ₁ (O) is connected to the metal plate 181, and the semiconductor chip mounting lead frame (upper arm) 18 ₂ (P) is connected to the metal plate 182, and the lead The frame 19 (N) is connected to the metal plate 191.

A schematic planar structure of the internal structure of the frame structure after mounting the semiconductor chip for creating the two-in-one module to which the power module 20B according to the comparative example 6 is applied is expressed as shown in FIG. Here, the semiconductor chip 1 is specifically composed of, for example, IGBTs 30 ₁ , 30 ₂ , 30 ₃ , 30 ₄ and free wheel diodes 32 ₁ , 32 ₂ , 32 ₃ , 32 ₄ as shown in FIG. It is configurable. The IGBTs 30 ₁ and 30 ₂ are arranged in two chips in parallel on the metal plate 182, and the free wheel diodes 32 ₁ and 32 ₂ are also arranged in two chips in parallel on the metal plate 182. The freewheel diodes 32 ₁ and 32 ₂ are connected in reverse parallel to the IGBTs 30 ₁ and 30 ₂ , respectively. Similarly, the IGBTs 30 ₃ and 30 ₄ are arranged in two chips in parallel on the metal plate 181, and the free wheel diodes 32 ₃ and 32 ₄ are also arranged in two chips in parallel on the metal plate 181. The freewheel diodes 32 ₃ and 32 ₄ are connected in reverse parallel to the IGBTs 30 ₃ and 30 ₄ , respectively.

That is, the semiconductor chip 1 (IGBTs 30 ₃ and 30 ₄ and free wheel diodes 32 ₃ and 32 ₄ ) is connected to the semiconductor chip mounting lead frame (lower arm) 18 ₁ (O) via the under-chip solder 2. Similarly, the semiconductor chip 1 (IGBTs 30 ₁ and 30 ₂ and free wheel diodes 32 ₁ and 32 ₂ ) is connected to the semiconductor chip mounting lead frame (upper arm) 18 ₂ (P) via the solder 2 under the chip. After bonding to the metal plate 182, wiring is performed using bonding wires 34 ₁ , 34 ₂ , 34 _3, and 34 ₄ .

Thereafter, the whole is molded using a mold resin, but before that, the tie bar (inner side) 25 needs to be cut off. However, if the tie bar (inner side) 25 is cut before resin molding, the semiconductor chip 1 (IGBTs 30 ₁ , 30 ₂ , 30 ₃ , 30 ₄ and free wheel diodes 32 ₁ , 32 ₂ , 32 ₃ , 32 ₄₎ The bonding force is applied to the bonded aluminum bonding wire, and the bonding portion is damaged.

(Embodiment)
―1 in 1 Module―
A schematic cross-sectional structure of the power module 20 according to the embodiment is expressed as shown in FIG. Further, a schematic cross-sectional structure of the power module 20 according to the embodiment mounted on the heat sink 100 is expressed as shown in FIG. Furthermore, a schematic cross-sectional structure of the power module 20 according to the modification of the embodiment mounted on the heat sink 100 is expressed as shown in FIG. Each of FIGS. 9A to 9C corresponds to a power module having a one-in-one configuration.

As shown in FIG. 9A, the power module 20 according to the embodiment includes an insulating layer 22, a first metal plate 181 and a second metal plate 191 that are arranged on the insulating layer 22 and divided from each other. Resin connection for fixed connection (holding the position of the opposing surface) between the semiconductor device 1 disposed on the first metal plate 181 via the under-chip solder 2 and the first metal plate 181 and the second metal plate 191 Plate 26.

  The semiconductor device 1 is joined to the metal plate 181 to which the semiconductor chip mounting lead frame 18 is connected via the under-chip solder 2, and the semiconductor device 1 and the metal plate 191 connected to the lead frame 19 are bonded using the bonding wires 9. Perform wiring.

  Thereafter, the whole is molded using a mold resin 17.

In the power module 20 according to the embodiment, the metal plates 181 and 191 are fixedly connected to each other by the resin connection plate 26 as shown in FIGS. 9A to 9C. Even when a bonding force is applied to the bonding wire 9 bonded to 1, damage due to the movement (displacement) of the metal plates 181 and 191 is not given to the bonding portion, and the reliability at the time of manufacturing is high.

  The first metal plate 181 and the second metal plate 191 can be formed of any one of copper, aluminum, a copper alloy, and an aluminum alloy.

  Further, as shown in FIG. 9A, the power module 20 according to the embodiment includes a bonding wire 9 that electrically connects the semiconductor device 1 and the second metal plate 191, the first metal plate 181 and the first metal plate 181. 2 metal plate 191, resin connection plate 26, semiconductor device 1, and mold resin 17 for molding bonding wire 9. Resin connection plate 26 has heat resistance equal to or higher than the molding temperature of mold resin 17.

Further, the resin connection plate 26 may be fixedly connected to the first metal plate 181 and the second metal plate 191 via screws 27 as shown in FIGS. 13 and 16 .

The resin connection plate 26 may be formed of any one of polyphenylene sulfide ( PPS ), polyether ether ketone (PEEK), and polyimide (PI). The molding temperature of the mold resin 17 is, for example, about 120 ° C. to 130 ° C., the softening point of polyphenylene sulfide ( PPS ) is, for example, about 150 ° C., and the softening point of polyether ether ketone (PEEK) is, for example, about The softening point of polyimide (PI) is, for example, about 550 ° C. or higher, and any of polyphenylene sulfide ( PPS ), polyetheretherketone (PEEK), and polyimide (PI) is sufficiently applicable. .

  The insulating layer 22 may be formed of an organic insulating resin layer.

  Moreover, the power module 20 according to the embodiment includes a cooling body (heat sink) 100 as shown in FIG. 9B, and the insulating layer 22 may be disposed on the cooling body side.

In the power module 20 according to the modification of the embodiment, the insulating layer 22 includes a hard insulating layer 22a disposed on the first metal plate and the second metal plate side, as shown in FIG. If the soft insulating layer 22b disposed on the opposite side of the first metal plate and the second metal plate is provided, the degree of adhesion to the cooling body 100 can be improved.

Further, as shown in FIG. 9C, the power module 20 according to the modification of the embodiment includes a cooling body (heat sink) 100, and the soft insulating layer 22b is disposed on the cooling (heat sink) 100 side. Also good.

  Here, the soft insulating layer 22b may be made of an organic material.

  The soft insulating layer 22b may be made of a silicone resin.

  Further, the soft insulating layer 22b may be filled with a filler having high thermal conductivity.

  Here, the filler filled in the soft insulating layer 22b may be at least one of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, boron nitride, beryllia, and magnesia.

  Similarly, the hard insulating layer 22a may be made of an organic material.

  The hard insulating layer 22a may be made of at least one of an epoxy resin, a urethane resin, an acrylic resin, and a silicone resin.

  The hard insulating layer 22a may be filled with a filler having high thermal conductivity.

  Here, the filler filled in the hard insulating layer 22a may be at least one of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, boron nitride, beryllia, and magnesia.

―2 in 1 Module―
A schematic planar structure of the power module 20T according to the embodiment (before the semiconductor chip mounting) is expressed as shown in FIG. Further, a schematic planar structure of the internal configuration of the power module 20T (after mounting the semiconductor chip) according to the embodiment is expressed as shown in FIG. 10 to 11 correspond to a power module having a two-in-one configuration.

Moreover, it is a power module which concerns on embodiment which applied IGBT as a semiconductor device, Comprising: The typical circuit expression of a two-in-one module is represented as shown in FIG. As shown in FIG. 12, two IGBTs Q1 and Q4 are built in one module. G1 is a gate signal terminal of the IGBT Q1, and E1 is an emitter terminal of the IGBT Q1. C1 is a collector terminal of the IGBT Q1. G4 is a gate signal terminal of the IGBT Q4, E4 is an emitter terminal of the IGBT Q4, and C4 is a collector terminal of the IGBT Q4. The collector terminal C1 of the IGBT Q1 is connected to a semiconductor chip mounting lead frame (upper arm) 18 ₂ (P). The emitter terminal E1 of the IGBT Q1 and the collector terminal C4 of the IGBT Q4 are connected to a semiconductor chip mounting lead frame (lower arm) 18 ₁ (O). The emitter terminal E4 of the IGBT Q4 is connected to the lead frame 19 (N). P is a positive power input terminal, N is a negative power input terminal, and O is an output terminal. Each semiconductor device 1 may be configured to be used as one semiconductor device 1 by connecting a plurality of semiconductor devices (chips) in parallel as shown in FIG.

As shown in FIGS. 10 to 11, the power module 20 </ b> T according to the embodiment includes metal plates 181, 182, and 191 that are divided from each other, and a semiconductor device that is disposed on the metal plate 181 via the under-chip solder 2. 1 (IGBTs 30 ₃ and 30 ₄ and freewheeling diodes 32 ₃ and 32 ₄ ) and a semiconductor device 1 (IGBTs 30 ₁ and 30 ₂ and freewheeling diodes 32 _1. 32 ₂ ) and a resin connection plate 26 for fixing and connecting the metal plates 181, 182 and 191 to each other.

FIG. 10 shows a power module 20T according to the embodiment in which a circuit is constituted by metal plates (181, 182, 191) in order to drive a motor or the like. The semiconductor chip mounting lead frame (lower arm) 18 ₁ (O), the semiconductor chip mounting lead frame (upper arm) 18 ₂ (P), and the lead frame 19 (N) need to be individual parts in terms of circuit configuration. . Therefore , as shown in FIG. 11, the metal plates 181, 182, and 191 eliminate the displacement between the metal plates 181, 182, and 191, and are opposed to each other where the distance (position) is to be maintained, in particular, the wire 9 traverses. The metal plates 181, 182, and 191 having surfaces are fixedly connected to each other via screws 27 by a plurality of resin connection plates 26. Here, the semiconductor chip mounting lead frame (lower arm) 18 ₁ (O) is connected to the metal plate 181, and the semiconductor chip mounting lead frame (upper arm) 18 ₂ (P) is connected to the metal plate 182, and the lead The frame 19 (N) is connected to the metal plate 191.

Here, the semiconductor chip 1 is specifically composed of, for example, IGBTs 30 ₁ , 30 ₂ , 30 ₃ , 30 ₄ and free wheel diodes 32 ₁ , 32 ₂ , 32 ₃ , 32 ₄ as shown in FIG. It is configurable. The IGBTs 30 ₁ and 30 ₂ are arranged in two chips in parallel on the metal plate 182, and the free wheel diodes 32 ₁ and 32 ₂ are also arranged in two chips in parallel on the metal plate 182. The freewheel diodes 32 ₁ and 32 ₂ are connected in reverse parallel to the IGBTs 30 ₁ and 30 ₂ , respectively. Similarly, the IGBTs 30 ₃ and 30 ₄ are arranged in two chips in parallel on the metal plate 181, and the free wheel diodes 32 ₃ and 32 ₄ are also arranged in two chips in parallel on the metal plate 181. The freewheel diodes 32 ₃ and 32 ₄ are connected in reverse parallel to the IGBTs 30 ₃ and 30 ₄ , respectively. In addition, each freewheel diode (D1 * D4) may be abbreviate | omitted.

That is, the semiconductor chip 1 (IGBTs 30 ₃ and 30 ₄ and free wheel diodes 32 ₃ and 32 ₄ ) is connected to the semiconductor chip mounting lead frame (lower arm) 18 ₁ (O) via the under-chip solder 2. Similarly, the semiconductor chip 1 (IGBTs 30 ₁ and 30 ₂ and free wheel diodes 32 ₁ and 32 ₂ ) is connected to the semiconductor chip mounting lead frame (upper arm) 18 ₂ (P) via the solder 2 under the chip. After bonding to the metal plate 182, wiring is performed using bonding wires 34 ₁ , 34 ₂ , 34 _3, and 34 ₄ .

  Next, the power module in the state shown in FIG. 11 is set in a mold die (not shown) and molded using the mold resin 17. At this time, resin molding is performed with the resin connection plate 26 as it is.

  Thereafter, the insulating layer 22 is formed on the back surfaces of the metal plates 181, 182 and 191.

In the power module 20T according to the embodiment, the metal plate 181, 182, 191, as shown in FIG. 11, a plurality of the resin connecting plate 26, because it is fixed connected to each other via a screw 27, the metal plate Bonding wires 34 ₁ , 34 ₂ , 34 ₃ bonded to 181, 182, 191 and semiconductor chip 1 (IGBTs 30 ₁ , 30 ₂ , 30 ₃ , 30 ₄ and free wheel diodes 32 ₁ , 32 ₂ , 32 ₃ , 32 ₄ ) - 34 ₄ force during mold is loaded also become damage to bonding portion is suppressed, the high reliability in manufacturing easy and manufacturing.

  The metal plates 181, 182 and 191 can be formed of any one of copper, aluminum, copper alloy, and aluminum alloy.

The power module 20T according to the embodiment, similar to FIG. 9 (a), the metallic plate 181, 182, 191, resin connecting plate 26, the semiconductor device _{1 (IGBT30 1 · 30 2 ·} 30 3 · 30 4 And free wheel diodes 32 ₁ , 32 ₂ , 32 ₃ , 32 ₄ ), bonding wires 34 ₁ , 34 ₂ , 34 ₃ , 34 ₄ , and a mold resin 17 for molding a portion excluding a part of each lead frame 18, 19. The resin connection plate 26 has heat resistance equal to or higher than the molding temperature of the mold resin 17.

Further, the resin connection plate 26 is more firmly fixed by being connected to the metal plates 181, 182, and 191 via the screws 27 .

The resin connection plate 26 may be formed of any one of polyphenylene sulfide ( PPS ), polyether ether ketone (PEEK), and polyimide (PI).

  The insulating layer 22 may be formed of an organic insulating resin layer.

  Further, the power module 20T according to the embodiment may include a cooling body (heat sink) 100 as in FIG. 9B, and the insulating layer 22 may be disposed on the cooling body side.

  Further, as in FIG. 9, the insulating layer 22 includes a hard insulating layer 22a disposed on the metal plate 181, 182 and 191 side and a soft insulating layer disposed on the opposite side of the metal plate 181, 182 and 191. 22b.

Similarly to FIG. 9C, the cooling body (heat sink) 100 may be provided, and the soft insulating layer 22b may be disposed on the cooling body (heat sink) 100 side.

  Here, the soft insulating layer 22b may be made of an organic material.

  The soft insulating layer 22b may be made of a silicone resin.

  Further, the soft insulating layer 22b may be filled with a filler having high thermal conductivity.

  Here, the filler filled in the soft insulating layer 22b may be at least one of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, boron nitride, beryllia, and magnesia.

  Similarly, the hard insulating layer 22a may be made of an organic material.

  The hard insulating layer 22a may be made of at least one of an epoxy resin, a urethane resin, an acrylic resin, and a silicone resin.

  The hard insulating layer 22a may be filled with a filler having high thermal conductivity.

  Here, the filler filled in the hard insulating layer 22a may be at least one of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, boron nitride, beryllia, and magnesia.

In the power module 20T according to the embodiment, it is connected to the metal plate 181 and the semiconductor chip mounting lead frame (upper arm) 18 ₂ (P) connected to the semiconductor chip mounting lead frame (lower arm) 18 ₁ (O). In addition, the resin connection plate 26 is used for holding the circuit pattern of the metal plate 191 connected to the metal plate 182 and the lead frame 19 (N) instead of holding with a tie bar.

For the shape retention of the circuit pattern, an insulating resin connection plate 26 by screwing with a screw 27, even in the same power module structure as FIG. 9 (a) ~ FIG 9 (c), complex A circuit pattern can be formed. Furthermore, a frame for holding the circuit pattern is not necessary. Moreover, since the molding die shape used at the time of resin molding does not become complicated, cost reduction can be achieved.

  A schematic cross-sectional structure taken along line II in FIG. 11 is represented as shown in FIG. 13A, and another schematic cross-sectional structure taken along line II in FIG. 11 is shown in FIG. Represented as shown.

As shown in FIG. 13A, the resin connection plate 26 is connected to the metal plate 181 and the metal plate 182 via a screw 27, and the depth of the screw 27 penetrates the metal plate 181 and the metal plate 182. In addition, it is desirable that the metal plate 181 and the metal plate 182 be flush with the back surface. Alternatively, the depth of the screw 27 does not penetrate the metal plate 181 and the metal plate 182, but is formed so as to penetrate to the depth D1 with respect to the metal plate 181 and the metal plate 182 as shown in FIG. May be. In this case, the thickness of the metal plate 181 and the metal plate 182 is D1 + D2. In either case, the reliability of the organic insulating resin layer 22 disposed on the back surfaces of the metal plate 181 and the metal plate 182 is ensured. The diameter of the head portion of the screw 27 is, for example, about 1.5 mm, and the diameter of the trunk portion is, for example, about 1.4 mm. Further, the thickness of the resin connection plate 26 is, for example, about 2.0 mm, and the thicknesses of the metal plate 181 and the metal plate 182 are also about 2.0 mm, for example .

Further, a schematic cross-sectional structure taken along line II-II in FIG. 11 is expressed as shown in FIG. On the metal plate 182 (P) connected to the semiconductor chip mounting lead frame (upper arm) 18 ₂ (P), the free wheel diode 32 ₁ and the IGBT 30 ₂ are arranged via the under-chip solder 2. The bonding wire 34 ₁ (EA) connects between the emitter E1 of the IGBT (Q1) 30 ₂ and the anode A1 of the freewheel diode (D1) 32 ₁ . The bonding wire 34 ₁ (AO) connects between the anode A1 of the free wheel diode (D1) 32 ₁ and the metal plate 181 (O) connected to the semiconductor chip mounting lead frame (lower arm) 18 ₁ (O). doing.

  A schematic planar structure of a power module 20T (after mounting a semiconductor chip) according to another embodiment is expressed as shown in FIG. FIG. 15 corresponds to a power module having a two-in-one configuration. The difference from the power module 20T according to the embodiment described with reference to FIGS. 10 and 11 is that a notch (protrusion) 29 is provided on the surface of the resin connection plate 26 facing the metal plates 181, 182 and 191 and the opposing metal The plates 181, 182, and 191 are formed with notch holes (recesses) 28 that fit into the notches (projections) 29. With such a configuration, positional deviation in the rotational direction due to screwing using the screw 27 is eliminated, and more accurate circuit pattern positioning is possible.

  Further, a schematic cross-sectional structure taken along the line III-III in FIG. 15 is represented as shown in FIG. 16A, and another schematic cross-sectional structure taken along the line III-III in FIG. ).

  In the power module 20T according to another embodiment, as shown in FIGS. 15 to 16, the resin connection plate 26 includes convex protrusions 29 on the surfaces facing the metal plates 181 182 191, The metal plates 181, 182, and 191 include a recess 28 that fits into the protrusion 29 on the surface facing the resin connection plate 26.

Here, the protrusion 29 may have a cylindrical shape or a prismatic shape .

  As shown in FIG. 16A, the resin connection plate 26 is connected to the metal plate 181 and the metal plate 182 via screws 27, and the depth of the screws 27 penetrates the metal plates 181 and 182. In addition, it is desirable that the metal plate 181 and the metal plate 182 be flush with the back surface. Alternatively, the depth of the screw 27 does not penetrate the metal plate 181 and the metal plate 182, and is formed so as to penetrate to the depth D1 with respect to the metal plate 181 and the metal plate 182 as shown in FIG. May be. In this case, the thickness of the metal plate 181 and the metal plate 182 is D1 + D2. In either case, the reliability of the organic insulating resin layer 22 disposed on the back surfaces of the metal plate 181 and the metal plate 182 is ensured. Further, the depth of a notch (projection) 29 provided on the surface of the resin connection plate 26 facing the metal plates 181, 182 and 191 penetrates the metal plate 181 and the metal plate 182, and the metal plate 181 and the metal It is desirable that the back surface of the plate 182 be flush with the back surface. Alternatively, the depth of the notch (projection) 29 does not penetrate the metal plate 181 and the metal plate 182, but penetrates to the depth D1 with respect to the metal plate 181 and the metal plate 182 as shown in FIG. It may be formed so as to. In both cases, the reliability of the organic insulating resin layer 22 disposed on the back surfaces of the metal plate 181 and the metal plate 182 is ensured, and positional deviation in the rotational direction due to screwing using the screws 27 is prevented, thereby providing a more accurate circuit pattern. This is for enabling the positioning. The notch (projection) 29 has a diameter of about 1.4 mm, for example. The diameter of the notch hole (concave portion) 28 is, for example, about 1.5 mm. The diameter of the head portion of the screw 27 is, for example, about 1.5 mm, and the diameter of the body portion is, for example, about 1.4 mm. Further, the thickness of the resin connection plate 26 is, for example, about 2.0 mm, and the thicknesses of the metal plate 181 and the metal plate 182 are also about 2.0 mm, for example.

Further, an enlarged schematic planar structure of the region A in FIG. 15 is represented as shown in FIG. 17A, and a schematic cross-sectional structure taken along line IV-IV in FIG. It is expressed as shown in b). As shown in FIG. 17 (a) and FIG. 17 (b), the connecting portion 34A of the bonding wire 34 in contact with the metal plate 191 of the bonding wire 34 _4, in order to avoid insulation failure, the resin connecting plate 26 It needs to be formed sufficiently separated. The separation distance SPD is about 2.0 mm, for example.

The resin connection plate 26 may be formed of any one of polyphenylene sulfide ( PPS ), polyether ether ketone (PEEK), and polyimide (PI).

  Further, the power module 20T according to the embodiment may include a cooling body (heat sink) 100 as in FIG. 9B, and the insulating layer 22 may be disposed on the cooling body side.

  Further, as in FIG. 9, the insulating layer 22 includes a hard insulating layer 22a disposed on the metal plate 181, 182 and 191 side and a soft insulating layer disposed on the opposite side of the metal plate 181, 182 and 191. 22b.

Similarly to FIG. 9C, the cooling body (heat sink) 100 may be provided, and the soft insulating layer 22b may be disposed on the cooling body (heat sink) 100 side.

  Here, the soft insulating layer 22b may be made of an organic material.

  The soft insulating layer 22b may be made of a silicone resin.

  Further, the soft insulating layer 22b may be filled with a filler having high thermal conductivity.

  Here, the filler filled in the soft insulating layer 22b may be at least one of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, boron nitride, beryllia, and magnesia.

  Similarly, the hard insulating layer 22a may be made of an organic material.

  The hard insulating layer 22a may be made of at least one of an epoxy resin, a urethane resin, an acrylic resin, and a silicone resin.

  The hard insulating layer 22a may be filled with a filler having high thermal conductivity.

  Here, the filler filled in the hard insulating layer 22a may be at least one of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, boron nitride, beryllia, and magnesia.

(Production method)
As shown in FIG. 9A, the method for manufacturing the power module 20 according to the embodiment includes a step of forming the first metal plate 181 and the second metal plate 191 that are divided from each other, and the surface of the first metal plate 181. A step of forming the semiconductor device 1 via the under-chip solder 2, a step of connecting the first metal plate 181 and the second metal plate 191 using the resin connection plate 26, and the semiconductor device 1 and the second metal A step of electrically connecting the plate 191 with the bonding wire 9, and molding the first metal plate 181 and the second metal plate 191, the semiconductor device 1, the bonding wire 9, and the resin connection plate 26 using the molding resin 17. And a step of forming the insulating layer 22 on the back surfaces of the first metal plate 181 and the second metal plate 191.

  The first metal plate 181 and the second metal plate 191 can be formed of any one of copper, aluminum, a copper alloy, and an aluminum alloy.

  The resin connection plate 26 has heat resistance equal to or higher than the molding temperature of the mold resin 17.

  The step of connecting the first metal plate 181 and the second metal plate 191 using the resin connection plate 26 includes a step of connecting via the screw 27.

  As in FIGS. 15 to 16A and 16B, the resin connection plate 26 includes a convex protrusion 29 on the surface facing the first metal plate 181 and the second metal plate 191. The first metal plate 181 and the second metal plate 191 include a recess 28 that fits into the protrusion 29 on the surface facing the resin connection plate 26, and the first metal plate 181 and the second metal plate using the resin connection plate 28. The step of connecting 191 may include a step of fitting the protrusion 29 and the recess 28.

  In addition, the manufacturing method of the power module 20 which concerns on embodiment described here is also in the power module 20T which concerns on embodiment of a two-in-one structure provided with a some metal plate as shown in FIGS. The same applies.

(Specific examples of power modules)
Hereinafter, a specific example of the power module 20 according to the embodiment will be described. Of course, also in the power module 20 described below, the insulating layer 22, the plurality of metal plates 181 and 191 disposed on the insulating layer 22 and divided from each other, and the first metal plate 181 via the under-chip solder 2 are interposed. And the resin connection plate 26 that connects the first metal plate 181 and the second metal plate 191 to each other.

  A schematic circuit representation of the SiC MOSFET of the power module 20 according to the embodiment, which is a one-in-one module (1 in 1 Module), is expressed as shown in FIG. A typical circuit representation is represented as shown in FIG.

  FIG. 18A shows a diode DI connected in reverse parallel to the MOSFETQ. The main electrode of MOSFETQ is represented by a drain terminal DT and a source terminal ST. Similarly, FIG. 18B shows a diode DI connected in reverse parallel to the IGBTQ. The main electrode of the IGBTQ is represented by a collector terminal CT and an emitter terminal ET.

Further, the detailed circuit expression of the SiC MOSFET of the one-in-one module, which is the power module 20 according to the embodiment, is expressed as shown in FIG.

The power module 20 according to the embodiment includes, for example, a one-in-one module configuration. That is, one (set) MOSFETQ is built in one module. As an example, five chips (MOSFETs × 5) can be mounted, and up to five MOSFETs Q can be connected in parallel. A part of the five chips can be mounted for the diode DI.

  More specifically, as shown in FIG. 19, a sensing MOSFET Qs is connected in parallel to the MOSFET Q. The sense MOSFET Qs is formed as a fine transistor in the same chip as the MOSFET Q. In FIG. 19, SS is a source sense terminal, CS is a current sense terminal, and G is a gate signal terminal. Also in the embodiment, in the semiconductor device Q, the sensing MOSFET Qs is formed as a fine transistor in the same chip.

  Moreover, it is the power module 20T which concerns on embodiment, Comprising: The typical circuit expression of SiC MOSFET of a 2 in 1 module is represented as shown to Fig.20 (a).

As shown in FIG. 20A, two MOSFETs Q1 and Q4 are built in one module. G1 is a gate signal terminal of the MOSFET Q1, and S1 is a source terminal of the MOSFET Q1. G4 is a gate signal terminal of the MOSFET Q4, and S4 is a source terminal of the MOSFET Q4. P is a positive power input terminal, N is a negative power input terminal, and O is an output terminal. Note that terminals other than the power input terminals P and N and the output terminal O are omitted in FIGS.

  Moreover, it is the power module 20T which concerns on embodiment, Comprising: The typical circuit expression of IGBT of a two-in-one module is represented as shown in FIG.20 (b). As shown in FIG. 20B, two IGBTs Q1 and Q4 are built in one module. G1 is a gate signal terminal of the IGBT Q1, and E1 is an emitter terminal of the IGBT Q1. G4 is a gate signal terminal of the IGBT Q4, and E4 is an emitter terminal of the IGBT Q4. P is a positive power input terminal, N is a negative power input terminal, and O is an output terminal.

(Configuration example of semiconductor device)
It is an example of the semiconductor device applied to the power module 20T which concerns on embodiment, Comprising: The typical cross-section of SiC MOSFET is represented as shown to Fig.21 (a), The typical cross-section of IGBT is FIG. It is expressed as shown in (b).

As an example of the semiconductor device 110 (Q) applied to the power module 20T according to the embodiment, a schematic cross-sectional structure of the SiC MOSFET is a semiconductor substrate 126 made of an n ⁻ high resistance layer as shown in FIG. A p base region 128 formed on the surface side of the semiconductor substrate 126, a source region 130 formed on the surface of the p base region 128, and a gate disposed on the surface of the semiconductor substrate 126 between the p base regions 128. The insulating film 132, the gate electrode 138 disposed on the gate insulating film 132, the source electrode 134 connected to the source region 130 and the p base region 128, and the back surface opposite to the surface of the semiconductor substrate 126. An n ⁺ drain region 124 and a drain pad electrode 136 connected to the n ⁺ drain region 124 are provided.

  In FIG. 21A, the semiconductor device 110 is composed of a planar gate type n-channel vertical SiC MOSFET, but may be composed of a trench gate type n-channel vertical SiC MOSFET or the like.

  Moreover, GaN-type FET etc. can also be applied instead of SiC MOSFET for the semiconductor device 110 (Q) applied to the power module 20T which concerns on embodiment.

  As the semiconductor device 110 applied to the power module 20T according to the embodiment, any of SiC-based, GaN-based, or AlN-based power devices can be applied.

  Furthermore, the semiconductor device 110 applied to the power module 20 according to the embodiment can use a semiconductor having a band gap energy of, for example, 1.1 eV to 8 eV.

Similarly, as an example of the semiconductor device 110A (Q) applied to the power module 20T according to the embodiment, a schematic cross-sectional structure of the IGBT is a semiconductor composed of an n ⁻ high resistance layer as shown in FIG. The substrate 126, the p base region 128 formed on the surface side of the semiconductor substrate 126, the emitter region 130E formed on the surface of the p base region 128, and the surface of the semiconductor substrate 126 between the p base regions 128 are disposed. The gate insulating film 132, the gate electrode 138 disposed on the gate insulating film 132, the emitter electrode 134E connected to the emitter region 130E and the p base region 128, and the back surface opposite to the surface of the semiconductor substrate 126 are disposed. It includes a p ⁺ collector region 124P that is, a collector pad electrode 136C which is connected to the p ⁺ collector region 124P

  In FIG. 21B, the semiconductor device 110A is composed of a planar gate type n-channel vertical IGBT, but may be composed of a trench gate type n-channel vertical IGBT or the like.

  FIG. 22 shows a schematic cross-sectional structure of a SiC MOSFET that is an example of the semiconductor device 110 applied to the power module 20T according to the embodiment and includes the source pad electrode SP and the gate pad electrode GP. The gate pad electrode GP is connected to the gate electrode 138 disposed on the gate insulating film 132, and the source pad electrode SP is connected to the source electrode 134 connected to the source region 130 and the p base region 128.

  Further, the gate pad electrode GP and the source pad electrode SP are disposed on an interlayer insulating film 144 for passivation covering the surface of the semiconductor device 110 as shown in FIG. Note that a fine transistor structure may be formed in the semiconductor substrate 126 below the gate pad electrode GP and the source pad electrode SP, as in the central portion of FIG. 21A or FIG.

  Further, as shown in FIG. 22, even in the transistor structure in the central portion, the source pad electrode SP may be arranged to extend on the interlayer insulating film 144 for passivation.

  23 is an example of the semiconductor device 110A applied to the power modules 20 and 20T according to the embodiment, and a schematic cross-sectional structure of the IGBT including the source pad electrode SP and the gate pad electrode GP is expressed as shown in FIG. . The gate pad electrode GP is connected to the gate electrode 138 disposed on the gate insulating film 132, and the emitter pad electrode EP is connected to the emitter electrode 134E connected to the emitter region 130E and the p base region 128.

  Further, as shown in FIG. 23, the gate pad electrode GP and the emitter pad electrode EP are disposed on a passivation interlayer insulating film 144 that covers the surface of the semiconductor device 110A. Incidentally, a fine IGBT structure may be formed in the semiconductor substrate 126 below the gate pad electrode GP and the emitter pad electrode EP, as in the central portion of FIG. 21B or FIG.

  Further, as shown in FIG. 23, even in the central IGBT structure, the emitter pad electrode EP may be arranged to extend on the passivation interlayer insulating film 144.

  In the schematic circuit configuration of the three-phase AC inverter 140 configured by using the power module 20T according to the embodiment, a circuit in which a SiC MOSFET is applied as a semiconductor device and a snubber capacitor C is connected between a power supply terminal PL and a ground terminal NL A configuration example is represented as shown in FIG. Similarly, in the schematic circuit configuration of the three-phase AC inverter 140A configured using the power module 20T according to the embodiment, an IGBT is applied as a semiconductor device, and a snubber capacitor C is connected between the power supply terminal PL and the ground terminal NL. An example of the circuit configuration is expressed as shown in FIG.

When the power module 20T according to the embodiment is connected to the power source E, a large surge voltage Ldi / dt is generated due to the high switching speed of the SiC MOSFET and IGBT due to the inductance L of the connection line. For example, assuming that the current change di = 300 A and the time change dt = 100 nsec accompanying switching, di / dt = 3 × 10 ⁹ (A / s). Although the value of the surge voltage Ldi / dt varies depending on the value of the inductance L, the surge voltage Ldi / dt is superimposed on the power supply V. The surge voltage Ldi / dt can be absorbed by the snubber capacitor C connected between the power supply terminal PL and the ground terminal NL.

(Application examples using power modules)
Next, with reference to FIG. 25, a three-phase AC inverter 140 configured using a power module 20T according to an embodiment to which an SiC MOSFET is applied as a semiconductor device will be described.

  As shown in FIG. 25, the three-phase AC inverter 140 includes a gate drive unit 150, a power module unit 152 connected to the gate drive unit 150, and a three-phase AC motor unit 154. The power module unit 152 is connected to U-phase, V-phase, and W-phase inverters corresponding to the U-phase, V-phase, and W-phase of the three-phase AC motor unit 154. Here, although the gate drive unit 150 is connected to the SiC MOSFETs Q1 and Q4 in FIG. 25, the gate drive unit 150 is also connected to the SiC MOSFETs Q2 and Q5 and the SiC MOSFETs Q3 and Q6, though not shown.

  The power module unit 152 includes inverter-structured SiC MOSFETs Q1 and Q4, Q2 and Q5, and Q3 and Q3 between the plus terminal (+) to which the converter 148 to which the storage battery (E) 146 is connected is connected and the minus terminal (−). Q6 is connected. Furthermore, free wheel diodes D1 to D6 are connected in antiparallel between the sources and drains of the SiC MOSFETs Q1 to Q6, respectively.

  In the power module 20T according to the embodiment, the structure of the single-phase inverter corresponding to the U-phase portion of FIG. 25 has been described. The module part 152 can also be formed.

  Next, with reference to FIG. 26, a three-phase AC inverter 140A configured using a power module 20T according to an embodiment to which an IGBT is applied as a semiconductor device will be described.

  As shown in FIG. 26, the three-phase AC inverter 140A includes a gate drive unit 150A, a power module unit 152A connected to the gate drive unit 150A, and a three-phase AC motor unit 154A. The power module unit 152A is connected to U-phase, V-phase, and W-phase inverters corresponding to the U-phase, V-phase, and W-phase of the three-phase AC motor unit 154A. Here, in FIG. 26, the gate drive unit 150A is connected to the IGBTs Q1 and Q4, but although not shown, it is also connected to the IGBTs Q2 and Q5 and the IGBTs Q3 and Q6.

  The power module unit 152A includes IGBTs Q1, Q4, Q2, Q5, and Q3, Q6 having inverter configurations between a plus terminal (+) and a minus terminal (−) to which a converter 148A to which a storage battery (E) 146A is connected is connected. Is connected. Furthermore, free wheel diodes D1 to D6 are connected in antiparallel between the emitters and collectors of IGBTs Q1 to Q6, respectively.

  In the power module 20T according to the embodiment, the structure of the single-phase inverter corresponding to the U-phase portion in FIG. 26 has been described. The module part 52 can also be formed.

  The power module according to the present embodiment can be formed in one-in-one, two-in-one, four-in-one, six-in-one, or seven-in-one types.

  In addition, any one of IGBT, diode, Si-based MOSFET, SiC-based MOSFET, and GaNFET semiconductor device can be applied to the power module according to the present embodiment.

  As described above, according to the present invention, it is possible to provide a power module that can be divided into metal bases, has a simple structure, is easy to manufacture, and has high reliability during manufacturing, and a method for manufacturing the power module.

[Other embodiments]
As mentioned above, although this invention was described by embodiment, the description and drawing which make a part of this indication are an illustration, Comprising: It should not be understood that this invention is limited. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

As described above, the present invention includes various embodiments not described herein. For example, only the embodiment in which the organic insulating resin layer is provided on the lower surface of the metal plate has been described, but the present invention may be applied to the back surface structure as shown in FIG. 4 or FIG. It is also possible to apply to a case type module having a structure in which an insulating substrate such as DBC is not used. Moreover, only the resin connection plate which is a plate-like shape has been described. However, any plate can be used as long as it can be held between the metal plates to maintain the relative position and interval between the metal plates. After arranging the resin connection plate, the mold resin may be melted so that the resin enters between the metal plates.

The power module according to the present invention can be used for semiconductor modules such as IGBT modules, diode modules, and MOS modules (Si, SiC, GaN) , industrial robots, electric vehicles, and hybrid electric vehicles using these semiconductor modules. It can be used for an in-vehicle power module such as an automobile.

1, 110, 110A ... Semiconductor chip (semiconductor device)
2 ... Solder under chip 3 ... Insulating substrate 4 ... Surface copper foil 5 ... Ceramic substrate 6 ... Backside copper foil 7 ... Insulating substrate lower solder 8, 181, 182, 191, 200 ... Metal plate (metal base)
9, ₁₃ , 34 ₁ , 34 ₂ , 34 ₃ , 34 ₄ ... Bonding wire (WB)
10 ... land 11 ... emitter E (the source S) side power terminal 14 ... collector C (drain D) side power terminal 15 ... resin case 16 ... silicone gel 17 ... mold resin 18 _1, 18 ₂ ... semiconductor chip mounting a lead frame DESCRIPTION OF SYMBOLS 19 ... Lead frame 20, 20A, 20T ... Power module 21 ... Insulating sheet 22 ... Insulating layer (organic insulating resin layer)
22a ... Hard insulating layer 22b ... Soft insulating layer 23 ... Frames 24, 25 ... Tie bar 26 ... Resin connecting plate 27 ... Screw 28 ... Notch hole (concave)
29 ... Notch (protrusion)
30 ₁ , 30 ₂ , 30 ₃ , 30 ₄ ... IGBT
32 ₁ , 32 ₂ , 32 ₃ , 32 ₄ ... Free wheel diode 34A... Connection portion 100 of bonding wire 34... Cooling body (heat sink)
124 ... drain region 124P ... collector region 126 ... semiconductor substrate 128 ... p base region 130 ... source region 130E ... emitter region 132 ... gate insulating film 134 ... source electrode 134E ... emitter electrode 136 ... drain pad electrode 136C ... collector pad electrode 138 ... Gate electrode 144 ... interlayer insulating film

Claims (30)

A first metal plate and a second metal plate each having sides facing each other;
A semiconductor device disposed on the first metal plate and generating heat during operation;
A bonding wire for electrically connecting the electrode formed on the surface of the semiconductor device and the second metal plate;
The first metal plate in the connection direction of the bonding wire is connected between the opposing sides of the first metal plate and the second metal plate along a direction parallel to the connection direction of the bonding wire. And a resin connection plate that restricts the movement of the second metal plate ,
The resin connection plate includes convex protrusions on the first metal plate and the second metal plate side of the first metal plate and the second metal plate that face and overlap the first metal plate and the second metal plate, respectively.
Each of the first metal plate and the second metal plate includes a recess or a through-hole that fits into the protrusion on a surface that is opposed to and overlaps the resin connection plate and on which the semiconductor device is disposed. ,
The protrusions power module, wherein Rukoto formed respectively on the inside by a length from both ends given of the resin connecting plate.   The power module according to claim 1, wherein the first metal plate and the second metal plate are formed of any one of copper, aluminum, a copper alloy, and an aluminum alloy. A mold resin for molding the first metal plate and the second metal plate, the resin connection plate, the semiconductor device, and the bonding wire;
The power module according to claim 1, wherein the resin connection plate has heat resistance equal to or higher than a molding temperature of the mold resin.   The resin connection plate has portions that respectively overlap the first metal plate and the second metal plate, and is connected to the first metal plate and the second metal plate via screws that penetrate the resin connection plate, respectively. The power module according to claim 1, wherein the power module is a power module. 5. The power module according to claim 1 , wherein a diameter of the protrusion is smaller than a diameter of the recess or the through hole . 2. The power module according to claim 1 , wherein the protrusion limits a displacement between the first metal plate and the second metal plate.   7. The power according to claim 1, wherein the resin connection plate is formed of any one of polyphenylene sulfide (PPS), polyether ether ketone (PEEK), and polyimide (PI). module. An insulating layer disposed on the back side of the first metal plate and the second metal plate;
The insulating layer includes a hard insulating layer disposed on the first metal plate and the second metal plate side, and a soft insulating layer disposed on a side opposite to the first metal plate and the second metal plate. Have
The power module according to claim 3 , wherein the soft insulating layer is exposed from the mold resin. With a cooling body,
The power module according to claim 8, wherein the soft insulating layer is disposed in close contact with the cooling body.   The power module according to claim 8, wherein the soft insulating layer is made of an organic material.   The power module according to any one of claims 8 to 10, wherein the soft insulating layer is made of a silicone resin.   The power module according to any one of claims 8 to 11, wherein the soft insulating layer is filled with a filler having high thermal conductivity.   The power module according to claim 12, wherein the filler is at least one of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, boron nitride, beryllia, and magnesia.   The power module according to claim 8, wherein the hard insulating layer is made of an organic material.   15. The hard insulating layer according to claim 8, wherein the hard insulating layer is made of at least one of an epoxy resin, a urethane resin, an acrylic resin, and a silicone resin. Power module.   The power module according to claim 8, wherein the hard insulating layer is filled with a filler having high thermal conductivity.   The power module according to claim 16, wherein the filler is at least one of aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, boron nitride, beryllia, and magnesia. A first metal plate, a second metal plate and a third metal plate which are divided from each other and have opposing surfaces;
A semiconductor device disposed on each of the first metal plate and the second metal plate and generating heat during operation;
A first bonding wire and a second bonding wire that electrically connect the electrode formed on each surface of the semiconductor device and the second metal plate or the third metal plate, respectively;
The facing surface of the facing portion between the first metal plate and the second metal plate and between the second metal plate and the third metal plate, which is crossed by the first bonding wire and the second bonding wire, respectively. A plurality of resin connection plates that respectively hold the positions of
Mold resin that covers each of the semiconductor devices, at least a part of the first metal plate, the second metal plate, and the third metal plate, the first and second bonding wires, and the resin connection plates. Prepared ,
The resin connection plate includes: a first resin connection plate that connects the first metal plate and the second metal plate along a direction parallel to a connection direction of the first bonding wire; the second metal plate; A second resin connection plate for connecting a third metal plate along the connection direction of the second bonding wire,
The first resin connection plate has first protrusions that are respectively inserted and fitted into first recesses provided on surfaces of the first metal plate and the second metal plate on which the semiconductor devices are disposed,
Said first protrusion, a power module, wherein Rukoto formed respectively inside from both ends by a predetermined length of said first resin connecting plate. The second resin connection plate has second protrusions that are respectively inserted and fitted into second recesses provided on surfaces of the second metal plate and the third metal plate on which the semiconductor devices are disposed,
The second protrusion, the power module of claim 18, wherein Rukoto formed respectively from both ends to the inside by a predetermined length of said second resin connecting plate.   The power module according to claim 18 or 19, wherein the resin connection plate has a melting temperature equal to or higher than a molding temperature of the mold resin. The power module according to claim 19 , wherein the diameter of the first protrusion is smaller than the diameter of the first recess, and the diameter of the second protrusion is smaller than the diameter of the second recess. .   The power module according to any one of claims 1 to 21, wherein the power module is formed in one-in-one, two-in-one, four-in-one, six-in-one, or seven-in-one types.   The power module according to any one of claims 1 to 22, wherein the semiconductor device includes any one of an IGBT, a diode, a Si-based MOSFET, a SiC-based MOSFET, and a GaNFET.   An in-vehicle power module comprising a plurality of the power modules according to any one of claims 1 to 23. Forming a first metal plate and a second metal plate having sides facing each other;
Disposing a semiconductor device that generates heat during operation on the surface of the first metal plate via solder;
Connecting the first metal plate and the second metal plate using a resin connection plate;
Electrically connecting the electrode formed on the surface of the semiconductor device and the second metal plate via a bonding wire;
Molding the first metal plate and the second metal plate, the semiconductor device, the bonding wire, and the resin connection plate using a mold resin;
And disposing an insulating layer on the back surfaces of the first metal plate and the second metal plate,
The resin connection plate is connected between the opposing sides of the first metal plate and the second metal plate along a direction parallel to a connection direction of the bonding wire, and the connection direction of the bonding wire. Arranged to limit the movement of the first metal plate and the second metal plate ,
The resin connection plate includes convex protrusions on the first metal plate and the second metal plate side of the first metal plate and the second metal plate that face and overlap the first metal plate and the second metal plate, respectively.
The first metal plate and the second metal plate each include a recess or a through hole that fits into the protrusion on a surface that is opposed to and overlaps the resin connection plate and on which the semiconductor device is disposed,
The protrusions are respectively formed on the inside by a predetermined length from both ends of the resin connection plate,
A step of connecting the second metal plate and the first metal plate using the resin connecting plate, a power module, characterized in Rukoto to have a step of fitting the recess or through-hole and the projecting portion Manufacturing method.   26. The method of manufacturing a power module according to claim 25, wherein the first metal plate and the second metal plate are formed of any one of copper, aluminum, a copper alloy, and an aluminum alloy.   27. The method of manufacturing a power module according to claim 25, wherein the resin connection plate has heat resistance equal to or higher than a molding temperature of the mold resin.   In the step of connecting the first metal plate and the second metal plate using the resin connection plate, the resin connection plate penetrates through the portions overlapping the first metal plate and the second metal plate, respectively. The method for manufacturing a power module according to any one of claims 25 to 27, further comprising a step of connecting to the first metal plate and the second metal plate via screws. The method for manufacturing a power module according to any one of claims 25 to 28 , wherein a diameter of the protrusion is smaller than a diameter of the recess or the through hole .   The step of connecting the first metal plate and the second metal plate using the resin connection plate includes arranging the resin connection plate, at least the second metal plate to which the wires are connected, and the semiconductor device. 26. The power module according to claim 25, wherein the power module is sandwiched between the first metal plate and the second metal plate so as to fix a distance between opposing surfaces between the first metal plate and the first metal plate. Production method.

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