JP6387416B2 - ウェーハ映像検査装置 - Google Patents
ウェーハ映像検査装置 Download PDFInfo
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- JP6387416B2 JP6387416B2 JP2016545709A JP2016545709A JP6387416B2 JP 6387416 B2 JP6387416 B2 JP 6387416B2 JP 2016545709 A JP2016545709 A JP 2016545709A JP 2016545709 A JP2016545709 A JP 2016545709A JP 6387416 B2 JP6387416 B2 JP 6387416B2
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- 238000007689 inspection Methods 0.000 title claims description 66
- 230000003287 optical effect Effects 0.000 claims description 104
- 238000003384 imaging method Methods 0.000 claims description 85
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- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 25
- 238000001514 detection method Methods 0.000 claims description 17
- 230000007547 defect Effects 0.000 claims description 10
- 239000000284 extract Substances 0.000 claims description 4
- 230000010365 information processing Effects 0.000 claims description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
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- 230000001360 synchronised effect Effects 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- MGIUUAHJVPPFEV-ABXDCCGRSA-N magainin ii Chemical compound C([C@H](NC(=O)[C@H](CCCCN)NC(=O)CNC(=O)[C@@H](NC(=O)CN)[C@@H](C)CC)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N[C@@H](CO)C(=O)N[C@@H](C)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](C(C)C)C(=O)NCC(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CO)C(O)=O)C1=CC=CC=C1 MGIUUAHJVPPFEV-ABXDCCGRSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/063—Illuminating optical parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Microscoopes, Condenser (AREA)
Description
dZFPA=Mag2*dZwafer
DOF(1μm)=λ/2NA2
Claims (8)
- 半導体ウェーハの欠陥を検査するためにウェーハ映像を取得して検査するウェーハ映像検査装置であって、
照明光を発生させる照明部と、
前記照明光が検査対象となるウェーハに照射された後に反射されるウェーハ映像を含む反射光を通過させて後方に投射させるレンズ部と、
前記レンズ部から転送されたウェーハ映像を分割する分割光学要素と、
前記レンズ部及び前記分割光学要素を経た映像がそれぞれ互いに異なる焦点位置に結像されるように設けられる複数の撮像素子からなる映像検出部と、
前記複数の撮像素子において撮像された互いに異なる焦点位置の映像を結合してスルー焦点走査光学顕微鏡(TSOM)映像を構成し、前記スルー焦点走査光学顕微鏡(TSOM)映像を前記検査対象ウェーハの正常パターンに対するスルー焦点走査光学顕微鏡(TSOM)映像と比較して対象ウェーハの良否を判断するスルー焦点走査光学顕微鏡(TSOM)映像処理部と、
を備え、
前記レンズ部を構成するレンズ同士の距離が調節可能であり、
前記レンズ部は、前記照明光が検査対象となるウェーハに照射された後に反射されるウェーハ映像を含む反射光を通過させて後方に投射させる第1のレンズ部と、
前記分割光学要素により分割された複数の映像にそれぞれ対応して設けられる複数の第2のレンズ部と、
を備え、
前記第2のレンズ部を構成するレンズ同士の距離が調節可能であり、
前記映像検出部は、前記第1のレンズ部と、前記分割光学要素及び前記第2のレンズ部を経た映像がそれぞれ互いに異なる焦点位置に結像されるように設けられるウェーハ映像検査装置。 - それぞれ互いに異なる焦点位置の映像を得るために、前記複数の第2のレンズ部を構成するレンズの種類は同じくするが、相互間の距離を異ならせて焦点距離を異ならせることを特徴とする請求項1に記載のウェーハ映像検査装置。
- それぞれ互いに異なる焦点位置の映像を得るために、前記複数の第2のレンズ部を構成するレンズの種類及び相互間の距離は同じくするが、前記複数の第2のレンズ部と前記複数の撮像素子との間の距離をそれぞれ互いに異ならせることを特徴とする請求項1に記載のウェーハ映像検査装置。
- それぞれ互いに異なる焦点位置の映像を得るために、前記複数の第2のレンズ部を構成するレンズ同士の距離は同じくするが、種類を異ならせて焦点距離を異ならせることを特徴とする請求項1に記載のウェーハ映像検査装置。
- 前記第2のレンズ部は、無限焦点ズームシステムを構成するレンズ及び焦点レンズを備え、前記無限焦点ズームシステムを構成するレンズ同士の距離が調節可能であることから、検査の対象となる領域の大きさ又は拡大倍率が調節可能であることを特徴とする請求項3又は請求項4に記載のウェーハ映像検査装置。
- 前記スルー焦点走査光学顕微鏡(TSOM)映像処理部は、スルー焦点走査光学顕微鏡(TSOM)映像構成部及びスルー焦点走査光学顕微鏡(TSOM)映像比較判断部を備え、
前記スルー焦点走査光学顕微鏡(TSOM)映像構成部は、複数の撮像素子において得られた焦点位置の異なる2次元映像の輝度プロファイルを抽出し、焦点位置情報を用いてスルー焦点走査光学顕微鏡(TSOM)映像を作成し、
前記スルー焦点走査光学顕微鏡(TSOM)映像比較判断部は、前記スルー焦点走査光学顕微鏡(TSOM)映像処理部において得られたスルー焦点走査光学顕微鏡(TSOM)映像を正常の半導体装置部分に対するスルー焦点走査光学顕微鏡(TSOM)映像と比較して対象物の良否を判断することを特徴とする請求項1から請求項4のうちのいずれか一項に記載のウェーハ映像検査装置。 - 前記スルー焦点走査光学顕微鏡(TSOM)映像処理部は、イメージ処理プログラム及び映像情報処理のためのプロセッサを両方とも備えるものであることを特徴とする請求項6に記載のウェーハ映像検査装置。
- 前記照明部はパルスレーザを備え、前記分割光学要素は一つ以上のビームスプリッタやミラーを備え、
前記ウェーハを把持して移動させるウェーハ移動ステージと、前記ウェーハが前記照明光に露出される位置である映像検出位置を前記照明光のパルス発生周期と関連付けるように前記ウェーハ移動ステージの搬送速度を制御する信号発生部と、が配備される請求項1から請求項4のうちのいずれか一項に記載のウェーハ映像検査装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130146941A KR101507950B1 (ko) | 2013-11-29 | 2013-11-29 | 웨이퍼 영상 검사 장치 |
KR10-2013-0146941 | 2013-11-29 | ||
KR10-2014-0021568 | 2014-02-24 | ||
KR1020140021568A KR101523336B1 (ko) | 2014-02-24 | 2014-02-24 | 웨이퍼 영상 검사 장치 |
PCT/KR2014/011459 WO2015080480A1 (ko) | 2013-11-29 | 2014-11-27 | 웨이퍼 영상 검사 장치 |
Publications (2)
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JP2016540231A JP2016540231A (ja) | 2016-12-22 |
JP6387416B2 true JP6387416B2 (ja) | 2018-09-05 |
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US (1) | US9829441B2 (ja) |
JP (1) | JP6387416B2 (ja) |
WO (1) | WO2015080480A1 (ja) |
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US20170301079A1 (en) * | 2016-04-19 | 2017-10-19 | Incheon University Industry Academic Cooperation Foundation | Method of acquiring tsom image and method of examining semiconductor device |
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US10887580B2 (en) * | 2016-10-07 | 2021-01-05 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
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2014
- 2014-11-27 US US15/023,112 patent/US9829441B2/en active Active
- 2014-11-27 WO PCT/KR2014/011459 patent/WO2015080480A1/ko active Application Filing
- 2014-11-27 JP JP2016545709A patent/JP6387416B2/ja active Active
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US20170003230A1 (en) | 2017-01-05 |
WO2015080480A1 (ko) | 2015-06-04 |
US9829441B2 (en) | 2017-11-28 |
JP2016540231A (ja) | 2016-12-22 |
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