JP6376960B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  Embodiments disclosed herein relate to a substrate processing apparatus and a substrate processing method.

  Conventionally, when drying a substrate after a cleaning process, the pattern collapse may be caused by the surface tension of the rinsing liquid remaining between the patterns. Therefore, in recent years, for example, a water-repellent protective film containing an oxide film and a hydrophobic group is formed on the surface of the substrate after the cleaning process to make it hydrophobic, and the drying process is performed with reduced surface tension acting on the pattern from the rinse liquid. The technique which performs is proposed (for example, refer patent document 1). In the technique described in Patent Document 1, ashing treatment such as dry ashing or ozone gas treatment is performed to remove the protective film formed on the surface of the substrate.

Japanese Patent No. 4403202

  However, in the above-described conventional technology, since the protective film is removed by ashing, the surface of the substrate may be oxidized and modified. If, for example, a film formation process is performed on the substrate in such a state, the electrical characteristics of the substrate may be deteriorated, such as the conductivity being lowered due to the oxidation of the substrate surface or the influence of hydrophobic groups remaining on the substrate surface. there were.

  An object of one embodiment is to provide a substrate processing apparatus and a substrate processing method capable of efficiently removing an oxide film and a hydrophobic group and suppressing deterioration of electrical characteristics of the substrate.

The substrate processing apparatus which concerns on 1 aspect of embodiment is equipped with the washing | cleaning apparatus, the holding | maintenance part, and the removal part. The cleaning apparatus performs a rinsing process with pure water on a substrate having an oxide film and a hydrophobic group formed on the surface, and after the rinsing process, performs a drying process to dry the substrate by evaporating the pure water. . The holding unit holds the substrate after the drying process by the cleaning device. Removal unit, the ammonia gas and hydrogen fluoride gas supply including the processing gas to the surface of the substrate held by the holding portion, the oxide layer and the hydrophobic groups by chemical etching using the process gas Is removed from the surface of the substrate.

  According to one aspect of the embodiment, the oxide film and the hydrophobic group can be efficiently removed, and deterioration of the electrical characteristics of the substrate can be suppressed.

FIG. 1A is an explanatory diagram (part 1) of the substrate processing method according to the first embodiment. FIG. 1B is an explanatory diagram (part 2) of the substrate processing method according to the first embodiment. FIG. 1C is an explanatory diagram (part 3) of the substrate processing method according to the first embodiment. FIG. 1D is an explanatory diagram (part 4) of the substrate processing method according to the first embodiment. FIG. 1E is an explanatory diagram (part 5) of the substrate processing method according to the first embodiment. FIG. 1F is an explanatory diagram (part 6) of the substrate processing method according to the first embodiment. FIG. 2 is a schematic diagram showing the configuration of the substrate processing system according to the first embodiment. FIG. 3 is a plan view showing a schematic configuration of the substrate processing apparatus according to the first embodiment. FIG. 4 is a cross-sectional view showing a schematic configuration of the removal processing apparatus. FIG. 5 is a cross-sectional view showing a schematic configuration of the heat treatment apparatus. FIG. 6 is a flowchart illustrating a substrate processing procedure executed by the substrate processing system according to the first embodiment. FIG. 7 is a schematic diagram illustrating a configuration of a substrate processing system according to the second embodiment. FIG. 8 is a schematic diagram illustrating a configuration of a substrate processing system according to the third embodiment.

  Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<Contents of substrate processing method>
First, the contents of the substrate processing method according to the first embodiment will be described with reference to FIGS. 1A to 1F. 1A to 1F are explanatory views of a substrate processing method according to the present embodiment.

  In the substrate processing method according to the present embodiment, cleaning and drying processing, removal processing of an oxide film, film formation processing, and the like are performed on a substrate W on which a pattern is formed (hereinafter also referred to as “wafer W”). Are performed sequentially.

  Hereinafter, the case where the substrate W is a silicon wafer will be described as an example. However, the present invention is not limited to this, and may be another type of wafer such as a compound semiconductor wafer. In the following description, the wafer W functioning as a capacitor will be described as an example. However, the present invention is not limited to this, and any wafer W may be used as long as the hydrophobization process described later is performed.

  As shown in FIG. 1A, in the wafer W in the present embodiment, the lower electrode film 2 is formed on the pattern formation surface 1a of the silicon layer 1 by, for example, wet etching. The lower electrode film 2 is an example of a pattern.

  Then, a cleaning and drying process is performed on the wafer W on which the lower electrode film 2 is formed. Specifically, the chemical solution is supplied to the wafer W to clean the wafer W, and then DIW (pure water), which is a type of rinse solution, is supplied to remove the chemical component.

  In addition, as a chemical | medical solution, although DHF (dilute hydrofluoric acid) is used, for example, it is not limited to this. Further, the rinsing liquid is not limited to the above-described DIW, and other types of rinsing liquids may be used as long as the chemical liquid components can be removed.

  Next, a surfactant (for example, a water-soluble surfactant) is supplied to the wafer W, whereby the surface of the wafer W includes the oxide film 3 and the hydrophobic group 4 as shown in FIG. 1B. The protective film 5 is formed. Thereby, the surface of the wafer W is hydrophobized.

  The oxide film 3 described above includes, for example, silicon oxide (SiO 2). Moreover, in FIG. 1B and FIG. 1C mentioned later, the hydrophobic group 4 is typically shown by the white circle for convenience of understanding.

  Next, DIW which is a kind of rinsing liquid is supplied to the wafer W, and the surfactant remaining on the wafer W is removed. Subsequently, a drying process is performed on the wafer W in a hydrophobic state.

  Specifically, for example, dry air is supplied to the wafer W, and DIW on the wafer W evaporates, whereby drying is performed. Note that the above-described drying treatment may be performed in a reduced-pressure atmosphere, and the evaporation rate may be increased to promote drying.

  Here, when the above-described drying process is performed, there is a possibility that the pattern collapses due to the surface tension of DIW remaining between the patterns (here, the lower electrode film 2), as indicated by an imaginary line in FIG. 1B.

  However, since the pattern of the wafer W in this embodiment is covered with the water-repellent protective film 5, the DIW is dried while keeping the contact angle θ (see FIG. 1B) with the pattern close to 90 °, for example. Will go. As a result, the surface tension acting on the pattern from DIW can be reduced, and the collapse of the pattern can be suppressed.

  By the way, after the drying process described above, a process of removing the oxide film 3 and the hydrophobic group 4 as the protective film 5 is performed. At this time, the oxide film 3 and the hydrophobic group 4 are not sufficiently removed, and the surface of the wafer W is removed. May remain. For example, when the oxide film 3 and the hydrophobic group 4 are removed by ashing such as dry ashing or ozone gas treatment, the surface of the wafer W may be oxidized and modified.

  Then, for example, when a film forming process is performed on the wafer W in which the hydrophobic group 4 remains or the wafer W in which the surface is oxidized, the hydrophobic group 4 remaining on the surface of the wafer W or oxidized on the surface of the wafer W. There is a possibility that the electrical characteristics of the wafer W may deteriorate due to the influence of the above, such as a decrease in conductivity and a decrease in capacitor capacity.

  Therefore, in the substrate processing method according to the present embodiment, as shown in FIG. 1C, the processing gas is supplied to the surface of the wafer W without using plasma, and the oxide film 3 and the hydrophobic film are formed by chemical etching using the processing gas. The base 4 was removed from the surface of the wafer W. Note that as the processing gas, a gas containing ammonia (NH 3) and hydrogen fluoride gas (HF) can be used.

  As a result, the oxide film 3 and the hydrophobic group 4 can be efficiently removed from the surface of the wafer W by isotropic etching while suppressing damage to the wafer W due to etching, and deterioration of the electrical characteristics of the wafer W is suppressed. be able to. Further, by performing the above-described chemical etching, the surface of the wafer W can be prevented from being oxidized and modified, and the electrical characteristics of the wafer W can be further prevented from deteriorating. FIG. 1D shows the wafer W from which the oxide film 3 and the hydrophobic group 4 have been removed by chemical etching using a processing gas.

  Next, a film forming process is performed on the wafer W from which the oxide film 3 and the hydrophobic group 4 have been removed. Specifically, for example, as shown in FIG. 1E, a capacitor film 6 is formed on the lower electrode film 2 on the wafer W, and an upper electrode is formed on the capacitor film 6 as shown in FIG. 1F. Film 7 is formed, completing the capacitor.

  The capacitor film 6 and the upper electrode film 7 described above are formed by, for example, a CVD (Chemical Vapor Deposition) method or an ALD (Atomic Layer Deposition) method, but are not limited thereto.

  In the above description, the film forming process is performed on the wafer W from which the oxide film 3 and the hydrophobic group 4 have been removed. However, the present invention is not limited to this. For example, an annealing process, an ion implantation process, etc. You may comprise so that another process may be performed.

<Configuration of substrate processing system>
Next, the configuration of the substrate processing system according to the present embodiment will be described with reference to FIG. FIG. 2 is a schematic diagram showing the configuration of the substrate processing system according to the present embodiment.

  As shown in FIG. 2, the substrate processing system 10 includes a cleaning device 20, a substrate processing device 30, and a film forming device 40. In the cleaning apparatus 20, cleaning processing, drying processing, and the like are performed on the wafer W.

  Specifically, for example, the wafer W (see FIG. 1A) on which the lower electrode film 2 is formed is carried into the cleaning device 20. In the cleaning apparatus 20, the wafer W loaded therein is supplied with a chemical solution from a chemical solution supply unit (not shown) to clean the wafer W, and then the rinse solution is supplied from a rinse solution supply unit (not shown). A rinsing process is performed to remove the chemical component by supplying.

  Further, in the cleaning apparatus 20, a surfactant is supplied from a surfactant supply unit (not shown) to the wafer W, and a water repellent protective film including the oxide film 3 and the hydrophobic group 4 on the surface of the wafer W. Hydrophobing treatment is performed to form 5 (see FIG. 1B).

  Further, in the cleaning apparatus 20, a rinsing process is performed in which the rinsing liquid is supplied again from the above-described rinsing liquid supply unit to remove the surfactant remaining on the wafer W. Further, in the cleaning apparatus 20, the drying process is performed on the hydrophobic wafer W by supplying dry air from a dry air supply unit (not shown).

  Then, after finishing the drying process, the wafer W on which the oxide film 3 and the hydrophobic group 4 are formed is unloaded from the cleaning apparatus 20 and then loaded into the substrate processing apparatus 30.

  In the substrate processing apparatus 30, a process of removing the oxide film 3 and the hydrophobic group 4 from the wafer W is performed (see FIGS. 1C and 1D). The configuration of the substrate processing apparatus 30 will be described in detail later.

  The wafer W from which the oxide film 3 and the hydrophobic group 4 have been removed is unloaded from the substrate processing apparatus 30 and then loaded into the film forming apparatus 40. In the film forming apparatus 40, a film forming process for forming the capacitive film 6 and the upper electrode film 7 is performed by, for example, the CVD method (see FIGS. 1E and 1F). Then, the wafer W that has been subjected to the film forming process is unloaded from the film forming apparatus 40.

<Configuration of substrate processing apparatus>
Next, the configuration of the substrate processing apparatus 30 according to the present embodiment will be described with reference to FIG. FIG. 3 is a plan view showing a schematic configuration of the substrate processing apparatus 30 according to the present embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 3, the substrate processing apparatus 30 is a gas chemical etching apparatus including a carry-in / out unit 31, a load lock chamber 32, a heat treatment apparatus 33, and a removal treatment apparatus 34.

  As will be described later, since the oxide film 3 and the hydrophobic group 4 are removed from the wafer W by the heat treatment device 33 and the removal treatment device 34, the heat treatment device 33 and the removal treatment device 34 are examples of the removal unit 35. is there. The heat treatment apparatus 33 is an example of a heating unit, and the removal processing apparatus 34 is an example of a gas supply unit.

  In addition, the substrate processing apparatus 30 includes a control device 36. The control device 36 is a computer, for example, and includes a control unit 36a and a storage unit 36b. The storage unit 36b stores a program for controlling various processes executed in the substrate processing apparatus 30. The control unit 36a controls the operation of the substrate processing apparatus 30 by reading and executing the program stored in the storage unit 36b.

  Note that such a program may be recorded on a computer-readable storage medium, and may be installed in the storage unit 36b of the control device 36 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

<Configuration of loading / unloading section>
The loading / unloading unit 31 of the substrate processing apparatus 30 includes a transfer chamber 50, and a first wafer transfer mechanism 51 that transfers the wafer W is provided inside the transfer chamber 50. The first wafer transfer mechanism 51 includes two transfer arms 51a and 51b that transfer the wafer W while holding it substantially horizontally. In the above description, the case where there are two transfer arms 51a and 51b has been described as an example. However, the present invention is not limited to this, and the number of transfer arms may be one or three or more.

  The transfer chamber 50 is formed in a substantially rectangular shape in plan view, and a carrier mounting table 52 is provided on the side of the transfer chamber 50 in the longitudinal direction (X-axis direction). A plurality of transfer containers (hereinafter referred to as “carrier C”) capable of storing a plurality of wafers W in a horizontal state are mounted on the carrier mounting table 52. Further, an orienter 53 for aligning the wafer W is provided on the side surface side in the short side direction (Y-axis direction) of the transfer chamber 50.

  In the loading / unloading unit 31 configured as described above, the wafer W is held by the transfer arms 51a and 51b, and is driven straight and rotated in the horizontal direction or moved up and down in the vertical direction by driving the first wafer transfer mechanism 51. It is moved and transported to a desired place. Further, the transfer arms 51 a and 51 b advance and retreat with respect to the carrier C, the orienter 53 and the load lock chamber 32, so that the wafer W is carried into and out of the carrier C and the load lock chamber 32.

<Configuration of load lock room>
The load lock chamber 32 is a side surface side in the longitudinal direction (X-axis direction) of the transfer chamber 50, more precisely, the side surface side opposite to the side surface where the carrier mounting table 52 of the transfer chamber 50 is provided (Y-axis positive direction side) Two are provided adjacent to each other.

  Each load lock chamber 32 is provided with a heat treatment device 33 adjacent thereto, and each heat treatment device 33 is provided with a removal treatment device 34 adjacent thereto. As described above, in the substrate processing apparatus 30, the load lock chamber 32, the heat treatment apparatus 33, and the removal processing apparatus 34 are arranged in series along the Y-axis direction in this order.

  Each load lock chamber 32 and the transfer chamber 50 are connected to each other via a gate valve 54. The load lock chamber 32 is configured to be evacuated to a predetermined degree of vacuum. Further, a second wafer transfer mechanism 55 for transferring the wafer W is provided inside each load lock chamber 32.

  The second wafer transfer mechanism 55 has, for example, an arm structure having a multi-joint axis and a pick that holds the wafer W substantially horizontally. In the second wafer transfer mechanism 55, the pick is positioned in the load lock chamber 32 when the arm is contracted, and the pick reaches the heat treatment apparatus 33 when the arm is extended, and further extends the arm. And configured to reach the removal processing device 34. That is, the second wafer transfer mechanism 55 is configured to transfer the wafer W between the load lock chamber 32, the heat treatment apparatus 33 and the removal processing apparatus 34.

<Configuration of removal processing apparatus>
Next, the configuration of the removal processing apparatus 34 will be described with reference to FIG. FIG. 4 is a cross-sectional view showing a schematic configuration of the removal processing apparatus 34.

  As shown in FIG. 4, the removal processing apparatus 34 includes a chamber 60, a mounting table 61, a gas supply mechanism 62, and an exhaust mechanism 63. The chamber 60 has a sealed structure, and a processing chamber (processing space) 64 for storing the wafer W is formed therein.

  Further, a loading / unloading port 65 for loading / unloading the wafer W into / from the processing chamber 64 is opened on the side wall of the chamber 60. A gate valve 66 that opens and closes the loading / unloading port 65 is provided at the loading / unloading port 65.

  The mounting table 61 is provided at an appropriate position in the processing chamber 64. On the mounting table 61, for example, a wafer W which is carried from the cleaning device 20 and on which the oxide film 3 and the hydrophobic group 4 are formed is mounted and held in a substantially horizontal state. The mounting table 61 is an example of a holding unit.

  The mounting table 61 is formed in, for example, a substantially circular shape in plan view, and is fixed to the bottom of the chamber 60. In addition, a temperature adjuster 67 that adjusts the temperature of the mounting table 61 is provided at an appropriate position inside the mounting table 61.

  The temperature adjuster 67 has a conduit through which a liquid such as water is circulated, and the temperature of the upper surface of the mounting table 61 is adjusted by exchanging heat with the liquid flowing in the conduit. Thereby, heat exchange is performed between the mounting table 61 and the wafer W on the mounting table 61, and the temperature of the wafer W is adjusted. The temperature controller 67 is not limited to the above-described configuration, and may be an electric heater, for example.

  The gas supply mechanism 62 includes a shower head 70, a first gas supply path 71, and a second gas supply path 72.

  The shower head 70 is provided on the ceiling of the chamber 60. Moreover, the shower head 70 has a plurality of discharge ports (not shown) for discharging the processing gas. The position where the shower head 70 is provided is not limited to the ceiling part of the chamber 60 described above, and may be provided at another place such as a side part of the chamber 60 as long as the processing gas can be supplied to the surface of the wafer W. Good.

  One ends of the first gas supply path 71 and the second gas supply path 72 are connected to the shower head 70, respectively. The other end of the first gas supply path 71 is connected to a supply source 73 of ammonia gas, which is a kind of processing gas. A flow rate adjusting valve 74 capable of opening / closing the first gas supply channel 71 and adjusting the supply flow rate of ammonia gas is inserted in the middle of the first gas supply channel 71.

  The other end of the second gas supply path 72 is connected to a supply source 75 of hydrogen fluoride gas, which is a kind of processing gas. A flow rate adjusting valve 76 capable of opening / closing the second gas supply channel 72 and adjusting the supply flow rate of hydrogen fluoride gas is inserted in the middle of the second gas supply channel 72.

  Therefore, for example, when the flow rate adjusting valves 74 and 76 are opened, ammonia gas and hydrogen fluoride gas are discharged into the processing chamber 64 through the shower head 70 so as to be diffused.

  In the above description, the first gas supply path 71 and the second gas supply path 72 are independently connected to the shower head 70, but the present invention is not limited to this. That is, for example, the first gas supply path 71 and the second gas supply path 72 may be merged, and the merged supply path may be connected to the shower head 70. Furthermore, if the flow rate adjusting valve is provided only in the joined supply path, the number of parts can be reduced.

  The exhaust mechanism 63 includes an exhaust path 78 connected to an opening 77 provided at the bottom of the chamber 60, for example. An on-off valve 79 is inserted in the middle of the exhaust passage 78, and an exhaust pump 80 for forced exhaust is inserted downstream of the on-off valve 79.

  The operation of each part of the removal processing device 34 such as the gate valve 66, the temperature regulator 67, the flow rate adjusting valves 74 and 76, the on-off valve 79, the exhaust pump 80, and the like is controlled by the control command of the control device 36 described above. . That is, supply of ammonia gas or hydrogen fluoride gas by the gas supply mechanism 62, exhaust by the exhaust mechanism 63, temperature adjustment by the temperature regulator 67, and the like are controlled by the control device 36.

<Configuration of heat treatment equipment>
Next, the configuration of the heat treatment apparatus 33 will be described with reference to FIG. FIG. 5 is a cross-sectional view showing a schematic configuration of the heat treatment apparatus 33.

  As shown in FIG. 5, the heat treatment apparatus 33 includes a chamber 90, a mounting table 91, a gas supply mechanism 92, and an exhaust mechanism 93. The chamber 90 has a sealed structure, and a processing chamber (processing space) 94 for storing the wafer W is formed therein.

  Further, a loading / unloading port 95 a for loading / unloading the wafer W into / from the processing chamber 94 is opened on the side wall of the chamber 90 on the load lock chamber 32 side. The loading / unloading port 95 a is provided with a gate valve 96 that opens and closes the loading / unloading port 95 a, and is connected to the load lock chamber 32 via the gate valve 96.

  Further, a loading / unloading port 95 b for loading / unloading the wafer W into / from the processing chamber 94 is opened on the side wall of the chamber 90 on the removal processing apparatus 34 side. The above-described gate valve 66 is provided at the loading / unloading port 95b, and opens / closes the loading / unloading port 95b. Further, the loading / unloading port 95 b is connected to the loading / unloading port 65 of the removal processing apparatus 34 via the gate valve 66.

  The mounting table 91 is provided at an appropriate position in the processing chamber 94. For example, the wafer W loaded from the heat treatment apparatus 33 is placed and held on the mounting table 91 in a substantially horizontal state.

  A heater 97 is embedded in the mounting table 91. A heating process for heating the wafer W is performed by the heater 97. This heating process will be described in detail later.

  The gas supply mechanism 92 includes a third gas supply path 100. One end of the third gas supply path 100 is connected to the processing chamber 94, and the other end is connected to a supply source 101 of nitrogen gas (N2) which is a kind of inert gas. A flow rate adjusting valve 102 capable of opening / closing the third gas supply channel 100 and adjusting the supply flow rate of nitrogen gas is interposed in the middle of the third gas supply channel 100.

  The exhaust mechanism 93 includes, for example, an exhaust path 104 connected to an opening 103 provided at the bottom of the chamber 90. An automatic pressure control valve 105 is inserted midway in the exhaust passage 104, and an exhaust pump 106 for forced exhaust is inserted downstream of the automatic pressure control valve 105.

  The operation of each part such as the gate valve 96, the heater 97, the flow rate adjustment valve 102, and the exhaust pump 106 of the heat treatment device 33 is controlled by the control command of the control device 36 described above. That is, supply of nitrogen gas by the gas supply mechanism 92, exhaust by the exhaust mechanism 93, heating by the heater 97, and the like are controlled by the control device 36.

<Wafer Processing Method in Substrate Processing Apparatus>
Next, a method for processing the wafer W in the substrate processing apparatus 30 configured as described above will be described with reference to FIGS.

  In the substrate processing apparatus 30, the oxide film 3 and the hydrophobic group 4 formed on the surface of the wafer W are removed. Specifically, first, the wafer W having the oxide film 3 and the hydrophobic group 4 formed on the surface is accommodated in the carrier C and transferred to the carrier mounting table 52 of the substrate processing apparatus 30.

  In the substrate processing apparatus 30, one wafer W is transferred from the carrier C of the carrier mounting table 52 to the load lock chamber 32 by one of the transfer arms 51 a and 51 b of the first wafer transfer mechanism 51 with the gate valve 54 opened. Then, it is delivered to the pick of the second wafer transfer mechanism 55.

  Thereafter, the gate valve 54 is closed and the load lock chamber 32 is evacuated. Subsequently, the gate valves 66 and 96 are opened, the pick is extended to the removal processing device 34, and the wafer W is mounted on the mounting table 61.

  Thereafter, the pick is returned to the load lock chamber 32, the gate valve 66 is closed, and the inside of the chamber 60 is sealed. In this state, ammonia gas and hydrogen fluoride gas are discharged (supplied) from the gas supply mechanism 62 to the wafer W while the temperature controller 67 adjusts the temperature of the wafer W on the mounting table 61 to a predetermined temperature.

Thereby, on the wafer W, the oxide film 3 containing silicon oxide (SiO 2) reacts with ammonia gas and hydrogen fluoride gas as shown in the following chemical reaction formulas (1) and (2).
SiO2 + 4HF → SiF4 + 2H2O (1)
SiF4 + 2NH3 + 2HF → (NH4) 2SiF6 (2)

  Thus, the oxide film 3 is transformed into a reaction product containing ammonium fluorosilicate ((NH 4) 2 SiF 6) and moisture (H 2 O) by reacting with the ammonia gas and the hydrogen fluoride gas as the processing gas.

  The supply amounts of ammonia gas and hydrogen fluoride gas are preferably set to such an amount that all the oxide film 3 can be transformed into a reaction product.

  In the above description, ammonia gas and hydrogen fluoride gas are supplied to the wafer W simultaneously or substantially simultaneously. However, the present invention is not limited to this. That is, one of ammonia gas and hydrogen fluoride gas may be supplied to the wafer W first, and then the other may be supplied.

  In the above description, the oxide film 3 is transformed into a reaction product by the processing gas. However, the present invention is not limited to this, and at least one of the oxide film 3 and the hydrophobic group 4 is reacted with the processing gas to produce a reaction product. You may make it change in quality.

  In the removal processing apparatus 34, after the gas supply process described above is completed, the heat treatment apparatus 33 performs a process of removing the reaction product formed on the surface of the wafer W by heating.

  Specifically, the gate valves 66 and 96 are opened, and the processed wafer W on the mounting table 61 is held by the pick of the second wafer transfer mechanism 55. Then, the arm of the second wafer transfer mechanism 55 contracts, and the wafer W is placed and held on the mounting table 91 of the heat treatment apparatus 33. Then, the pick is returned to the load lock chamber 32, and the gate valves 66 and 96 are closed.

Thereafter, nitrogen gas is supplied into the chamber 90 and the wafer W on the mounting table 91 is heated by the heater 97 until, for example, a predetermined temperature or higher. As a result, the reaction product formed by the removal processing device 34 is heated and vaporized (sublimated) as shown in the following chemical formula (3), and is removed together with the hydrophobic group 4.
(NH4) 2SiF6 → SiF4 + 2NH3 + 2HF (3)

  Thus, after the gas supply process in the removal processing apparatus 34, the heat treatment is performed in the heat treatment apparatus 33, whereby the oxide film 3 and the hydrophobic groups 4 formed on the surface of the wafer W are removed.

  The wafer W from which the oxide film 3 and the hydrophobic group 4 have been removed is unloaded from the substrate processing apparatus 30 and loaded into the film forming apparatus 40 (see FIG. 2). Specifically, the gate valves 54 and 96 are opened, and the wafer W on the mounting table 91 is held by the pick of the second wafer transfer mechanism 55. Then, the wafer W is transferred from the pick of the second wafer transfer mechanism 55 to one of the transfer arms 51a and 51b of the first wafer transfer mechanism 51 and stored in the carrier C, and the carrier C storing the wafer W is formed. It is conveyed to the membrane device 40.

  In the above description, the gas supply process and the heating process for the wafer W are performed in separate chambers 60 and 90, respectively, but the present invention is not limited to this. For example, the wafer W may be configured to be performed in the same chamber. Also good.

<Specific operation of substrate processing system>
Next, a specific operation of the substrate processing system 10 will be described with reference to FIG. FIG. 6 is a flowchart illustrating a substrate processing procedure executed by the substrate processing system 10 according to the present embodiment. Each of the cleaning apparatus 20, the substrate processing apparatus 30, and the film forming apparatus 40 included in the substrate processing system 10 executes each processing procedure illustrated in FIG. 6 in accordance with the control of the control apparatus included in each apparatus.

  As shown in FIG. 6, in the substrate processing system 10, first, the wafer W is carried into the cleaning device 20 (step S <b> 10). In the wafer carry-in process, for example, the wafer W (see FIG. 1A) on which the lower electrode film 2 is formed is carried into the cleaning device 20.

  Next, the wafer W carried into the cleaning apparatus 20 is supplied with a chemical solution to perform a cleaning process on the wafer W (step S11), and then a rinse process is performed to remove the chemical component by supplying a rinse liquid. (Step S12).

  Next, a hydrophobization process is performed in which a surfactant is supplied to the wafer W to form the oxide film 3 and the hydrophobic group 4 on the surface of the wafer W (step S13). Then, a rinsing process is performed to supply the rinsing liquid to the wafer W to remove the remaining surfactant (step S14), and then a drying process of the wafer W is performed (step S15).

  Next, a wafer unloading process for unloading the wafer W having the oxide film 3 and the hydrophobic group 4 formed on the surface thereof from the cleaning apparatus 20 is performed (step S16), and the unloading of the unloaded wafer W to the substrate processing apparatus 30 is performed. Processing is performed (step S17).

  Then, after the substrate supply apparatus 30 performs the gas supply process for supplying the process gas to the surface of the wafer W while holding the wafer W having the oxide film 3 and the hydrophobic group 4 formed on the surface (step S18), The wafer W is heated (step S19). Thus, the oxide film 3 and the hydrophobic group 4 are removed from the wafer W by supplying the processing gas to the wafer W and performing chemical etching using the processing gas.

  Next, a wafer unloading process for unloading the wafer W from which the oxide film 3 and the hydrophobic group 4 have been removed from the substrate processing apparatus 30 is performed (step S20), and the unloaded wafer W is loaded into the film forming apparatus 40. Processing is performed (step S21).

  Then, a film forming process for forming the capacitive film 6 and the upper electrode film 7 is performed on the wafer W carried into the film forming apparatus 40 (step S22), and then the wafer W is carried out from the film forming apparatus 40. A carry-out process is performed (step S23).

  As described above, the substrate processing apparatus 30 according to this embodiment includes the holding unit (mounting table 61) and the removing unit 35 (the heat treatment apparatus 33 and the removal processing apparatus 34). The holding unit holds the wafer W having the oxide film 3 and the hydrophobic group 4 formed on the surface. The removing unit 35 supplies a processing gas to the surface of the wafer W held by the holding unit, and removes the oxide film 3 and the hydrophobic groups 4 from the surface of the wafer W by chemical etching using the processing gas.

  Therefore, according to the substrate processing apparatus 30 according to the present embodiment, the oxide film 3 and the hydrophobic group 4 can be efficiently removed, and deterioration of the electrical characteristics of the wafer W can be suppressed.

(Second Embodiment)
Next, the substrate processing system 10a according to the second embodiment will be described. FIG. 7 is a schematic diagram showing a configuration of a substrate processing system 10a according to the second embodiment. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  A description will be given focusing on differences from the first embodiment. The substrate processing system 10a according to the second embodiment includes a substrate processing apparatus 30 and a film forming apparatus 40, and a substrate processing apparatus. 30 is provided with a cleaning device 20.

  That is, since the cleaning apparatus 20 is mounted on the substrate processing apparatus 30, the unloading process (step S <b> 16 in FIG. 6) and the loading process (step in FIG. 6) from the cleaning apparatus 20 to the substrate processing apparatus 30. S17) can be omitted. Thus, in the second embodiment, after the wafer W is dried (step S15 in FIG. 6), the process gas supply process (step S18 in FIG. 6) can be performed. Can be improved.

(Third embodiment)
Next, a substrate processing system 10b according to the third embodiment will be described. FIG. 8 is a schematic diagram showing a configuration of a substrate processing system 10b according to the third embodiment.

  In the substrate processing system 10b according to the third embodiment, the cleaning apparatus 20 and the substrate processing apparatus 30 are provided, and the substrate processing apparatus 30 is provided with the film forming apparatus 40.

  That is, since the film forming apparatus 40 is mounted on the substrate processing apparatus 30, the wafer W is carried out from the substrate processing apparatus 30 to the film forming apparatus 40 (step S 20 in FIG. 6) and carried in (FIG. 6). Step S21) can be omitted. As a result, in the third embodiment, after the heat treatment of the wafer W (step S19 in FIG. 6), the film formation process (step S22 in FIG. 6) can be performed, and thus the productivity of the wafer W is achieved. Can be improved.

  In the second and third embodiments described above, the configuration in which the cleaning apparatus 20 or the film forming apparatus 40 is mounted on the substrate processing apparatus 30 has been described as an example, but the present invention is not limited to this. That is, for example, both the cleaning apparatus 20 and the film forming apparatus 40 may be mounted on the substrate processing apparatus 30.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W wafer (substrate)
DESCRIPTION OF SYMBOLS 1 Silicon layer 2 Lower electrode film 3 Oxide film 4 Hydrophobic group 5 Protective film 6 Capacitance film 7 Upper electrode film 10 Substrate processing system 20 Cleaning device 30 Substrate processing device 33 Heat treatment device 34 Removal processing device 35 Removal part 36 Control device 40 Film formation Apparatus 60 Chamber 61 Placement table 62 Gas supply mechanism 63 Exhaust mechanism 90 Chamber 91 Placement table 92 Gas supply mechanism 93 Exhaust mechanism

Claims (6)

A cleaning device that performs a rinsing process with pure water on a substrate in a state where an oxide film and a hydrophobic group are formed on the surface, and performs a drying process for drying the substrate by evaporating the pure water after the rinsing process;
A holding unit for holding the substrate after the drying process by the cleaning device is performed;
Ammonia gas and hydrogen fluoride gas supply including the processing gas to the surface of the substrate held by the holding portion, of the substrate the oxide film and the hydrophobic groups by chemical etching using the process gas A substrate processing apparatus comprising: a removing unit that removes the surface. The removing unit is
A gas supply unit configured to supply the processing gas to the surface of the substrate and to cause at least one of the oxide film and the hydrophobic group to react with the processing gas to be converted into a reaction product;
The substrate processing apparatus according to claim 1, further comprising: a heating unit that heats and removes the reaction product. The substrate processing apparatus according to claim 1, further comprising a film forming apparatus that performs a film forming process on the substrate from which the oxide film and the hydrophobic group have been removed by the removing unit. A washing and drying step of performing a rinsing process with pure water on a substrate having an oxide film and a hydrophobic group formed on a surface, and drying the substrate by evaporating the pure water after the rinsing process; ,
A holding step for holding the substrate after the drying process in the washing and drying step is performed;
Ammonia gas and hydrogen fluoride gas supply including the processing gas to the surface of the substrate, a removal step of removing the oxide film and the hydrophobic groups from the surface of the substrate by chemical etching using the process gas A substrate processing method comprising: The removal step includes
A gas supply step of supplying the processing gas to the surface of the substrate, causing at least one of the oxide film and the hydrophobic group to react with the processing gas and transforming into a reaction product;
The substrate processing method of Claim 4 including the heating process of heating and removing the said reaction product. 6. The substrate processing method according to claim 4, further comprising a film forming step of performing a film forming process on the substrate from which the oxide film and the hydrophobic group have been removed in the removing step.

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