JP6376308B2

JP6376308B2 - Wireless IC device and method of manufacturing wireless IC device

Info

Publication number: JP6376308B2
Application number: JP2018501012A
Authority: JP
Inventors: 加藤　登; 登加藤
Original assignee: Murata Manufacturing Co Ltd
Current assignee: Murata Manufacturing Co Ltd
Priority date: 2016-02-25
Filing date: 2016-12-19
Publication date: 2018-08-22
Anticipated expiration: 2036-12-19
Also published as: JPWO2017145505A1; WO2017145505A1

Description

本発明は、ＲＦＩＤ（ＲａｄｉｏＦｒｅｑｕｅｎｃｙＩｄｅｎｔｉｆｉｃａｔｉｏｎ）タグをはじめとする近距離無線通信装置等に用いられるヘリカル状コイルを備える無線ＩＣデバイスに関する発明である。 The present invention relates to a wireless IC device including a helical coil used in a short-range wireless communication apparatus such as an RFID (Radio Frequency Identification) tag.

ＨＦ帯のＲＦＩＤタグはカードサイズのものが一般的であるが、商品管理等に用いるために、占有面積の小さな小型のＲＦＩＤタグが求められることがある。小型のＨＦ帯ＲＦＩＤタグとしては、特許文献１，２に示されるような形状のＲＦＩＤタグが知られている。これら小型のＲＦＩＤタグは、いわゆるシート積層工法を利用したＲＦＩＤタグであり、積層型のヘリカル状コイル（コイルアンテナ）を多層基板に内蔵し、ＲＦＩＣチップを多層基板に搭載したものである。 An HF band RFID tag is generally card-sized, but a small RFID tag with a small occupied area may be required for use in merchandise management or the like. As a small HF band RFID tag, an RFID tag having a shape as shown in Patent Documents 1 and 2 is known. These small-sized RFID tags are RFID tags using a so-called sheet lamination method, in which a laminated helical coil (coil antenna) is built in a multilayer substrate, and an RFIC chip is mounted on the multilayer substrate.

特開２００７−１０２３４８号公報JP 2007-102348 A 国際公開第２０１１／１０８３４０号International Publication No. 2011/108340

発明者は、上記小型のＲＦＩＤタグを開発する過程で、特許文献１，２に示されるようなＲＦＩＤタグにおいては、次のような課題があることを見いだした。 In the process of developing the above-mentioned small RFID tag, the inventor found that the RFID tag as disclosed in Patent Documents 1 and 2 has the following problems.

（ａ）特許文献１，２に示されるＲＦＩＤタグは、ＲＦＩＣチップの主面がヘリカル状コイルの中心軸と交差する位置に配置されたものである。そのため、ＲＦＩＣチップを実装するための電極（ランドパターン）がヘリカル状コイルの巻回軸と交差する。その結果、ＲＦＩＣチップ実装用電極およびＲＦＩＣチップが、ヘリカル状コイルによる磁界の形成を妨げてしまう傾向にある。なお、ＲＦＩＣチップをコイル開口の外側に配置すれば、磁界の形成を妨げにくくなるが、体積が大きくなってしまう。 (A) The RFID tags shown in Patent Documents 1 and 2 are arranged at a position where the main surface of the RFIC chip intersects the central axis of the helical coil. Therefore, an electrode (land pattern) for mounting the RFIC chip intersects with the winding axis of the helical coil. As a result, the RFIC chip mounting electrode and the RFIC chip tend to prevent the magnetic field from being formed by the helical coil. If the RFIC chip is arranged outside the coil opening, it is difficult to prevent the formation of the magnetic field, but the volume is increased.

（ｂ）特に、ヘリカル状コイルをシート積層工法で製造する場合に、シートの積みずれ（積層位置精度）や積層体の平坦性を考慮する必要があり、シートの積層数の増加やコイルパターンの厚膜化には限界がある。そのため、得られるインダクタンス値には制限があり、特に直流抵抗（ＤＣＲ：ｄｉｒｅｃｔｃｕｒｒｅｎｔｒｅｓｉｓｔａｎｃｅ）の小さなヘリカル状コイルを得ることは難しい。なお、シートの面方向にコイル巻回軸が向くようにコイルパターンを形成することは可能であるが、この場合には上記シートの積層数の限界により、コイル開口面積を大きくすることは困難であり、直流抵抗の小さなヘリカル状コイルを得ることは難しい。 (B) In particular, when a helical coil is manufactured by the sheet lamination method, it is necessary to consider sheet stacking error (stacking position accuracy) and flatness of the laminated body. There is a limit to thickening. Therefore, the inductance value obtained is limited, and it is particularly difficult to obtain a helical coil having a small direct current resistance (DCR). Although it is possible to form a coil pattern so that the coil winding axis faces the sheet surface direction, in this case, it is difficult to increase the coil opening area due to the limit of the number of stacked sheets. Yes, it is difficult to obtain a helical coil with low DC resistance.

本発明の目的は、所望のインダクタンス値を有し、且つ、優れた電気特性を有する、特に直流抵抗の低減が可能な小型のヘリカル状コイルを備える無線ＩＣデバイスを提供することにある。また、上記無線ＩＣデバイスの製造方法を提供することにある。 An object of the present invention is to provide a wireless IC device having a small helical coil having a desired inductance value and excellent electrical characteristics, and particularly capable of reducing a direct current resistance. Another object of the present invention is to provide a method for manufacturing the wireless IC device.

（１）本発明の無線ＩＣデバイス（１０１）は、
第１面（ＶＳ１）および前記第１面（ＶＳ１）に対向する第２面（ＶＳ２）を有する樹脂本体（１０）と、
前記樹脂本体（１０）に埋設される第１部分と、前記樹脂本体（１０）の表面にパターニングされる第２部分とを有し、且つ、前記第１面（ＶＳ１）に沿った巻回軸（ＡＸ）を有するヘリカル状コイル（ＨＣ１）と、
第１絶縁層（１）と、
前記ヘリカル状コイル（ＨＣ１）に接続されるＲＦＩＣ（４）と、
を備え、
前記ヘリカル状コイル（ＨＣ１）は、
大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）と、
前記大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）に導通し、前記巻回軸（ＡＸ）方向（Ｙ軸方向）から視て、前記大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）の外径の内側に配置される小径ループ（ＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４）と、
を備え、
前記第１部分は、前記小径ループ（ＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４）の一部を構成する第１小径柱状導体（１１，１２，１３，１４）および第２小径柱状導体（２１，２２，２３，２４）、ならびに前記大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）の一部を構成する第１大径柱状導体（３１，３２，３３，３４）および第２大径柱状導体（４１，４２，４３，４４）を含み、
前記第２部分は、前記第１面（ＶＳ１）に形成され、前記大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）の一部を構成する第１大径導体パターン（Ｂｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４）と、前記第１面（ＶＳ１）に形成され、前記小径ループ（ＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４）の一部を構成する第１小径導体パターン（Ｓｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４）とを含み、
少なくとも前記第１大径導体パターン（Ｂｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４）と前記第１小径導体パターン（Ｓｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４）とが重なる部分には、第１絶縁層（１）が挟まれることを特徴とする。(1) The wireless IC device (101) of the present invention is
A resin body (10) having a first surface (VS1) and a second surface (VS2) facing the first surface (VS1);
A winding shaft having a first part embedded in the resin body (10) and a second part patterned on the surface of the resin body (10) and along the first surface (VS1) A helical coil (HC1) having (AX);
A first insulating layer (1);
RFIC (4) connected to the helical coil (HC1);
With
The helical coil (HC1)
Large diameter loops (BL1, BL2, BL3, BL4);
The outer diameter of the large-diameter loop (BL1, BL2, BL3, BL4) is conducted to the large-diameter loop (BL1, BL2, BL3, BL4) and viewed from the winding axis (AX) direction (Y-axis direction). A small-diameter loop (SL1, SL2, SL3, SL4) disposed inside
With
The first portion includes a first small-diameter columnar conductor (11, 12, 13, 14) and a second small-diameter columnar conductor (21, 22, 23) that constitute a part of the small-diameter loop (SL1, SL2, SL3, SL4). , 24), and the first large-diameter columnar conductors (31, 32, 33, 34) and the second large-diameter columnar conductors (41, 42) that constitute a part of the large-diameter loops (BL1, BL2, BL3, BL4). , 43, 44)
The second portion is formed on the first surface (VS1), and includes a first large-diameter conductor pattern (Bp11, Bp12, Bp13, Bp14) that constitutes a part of the large-diameter loop (BL1, BL2, BL3, BL4). ) And a first small-diameter conductor pattern (Sp11, Sp12, Sp13, Sp14) formed on the first surface (VS1) and constituting a part of the small-diameter loop (SL1, SL2, SL3, SL4),
The first insulating layer (1) is sandwiched between at least the first large-diameter conductor pattern (Bp11, Bp12, Bp13, Bp14) and the first small-diameter conductor pattern (Sp11, Sp12, Sp13, Sp14). It is characterized by that.

この構成では、小径導体パターンと大径導体パターンとが同一平面上に形成されておらず、小径導体パターンと大径導体パターンとが重なる部分に絶縁層が介在するため、小径導体パターンと大径導体パターンとが接触（線間ショート）する可能性は低い。したがって、ジャンパーチップ等の接続部材を別途設けることなく、大径導体パターンと小径導体パターンとの絶縁が確保される。そのため、大径ループおよび小径ループを、巻回軸方向に狭いピッチで配列することができ、所期のターン数・所期のインダクタンス値を有するヘリカル状コイルを得やすくなる。また、この構成では、第１面に直交する方向から視て、小径導体パターンと大径導体パターンとが一部重なるため、小径導体パターンおよび大径導体パターンの線幅を容易に太くでき、ヘリカル状コイルのＤＣＲをさらに低減できる。 In this configuration, the small-diameter conductor pattern and the large-diameter conductor pattern are not formed on the same plane, and an insulating layer is interposed between the small-diameter conductor pattern and the large-diameter conductor pattern. The possibility of contact with the conductor pattern (short circuit between lines) is low. Therefore, insulation between the large-diameter conductor pattern and the small-diameter conductor pattern is ensured without separately providing a connection member such as a jumper chip. Therefore, the large-diameter loop and the small-diameter loop can be arranged at a narrow pitch in the winding axis direction, and a helical coil having a desired number of turns and a desired inductance value can be easily obtained. Further, in this configuration, the small-diameter conductor pattern and the large-diameter conductor pattern partially overlap each other when viewed from the direction orthogonal to the first surface. Therefore, the line width of the small-diameter conductor pattern and the large-diameter conductor pattern can be easily increased, and the helical The DCR of the coil can be further reduced.

また、本実施形態では、ヘリカル状コイルを構成する大径ループおよび小径ループの少なくとも一部が、金属部材（柱状導体）で構成されている。そのため、導電性ペーストの焼成による焼結金属体や、導電性薄膜のエッチングによる薄膜金属体等で構成する場合に比べて大径ループおよび小径ループのＤＣＲを小さくできるので、Ｑ値が高く、低損失のヘリカル状コイルが得られる。また、ヘリカル状コイル全体の低抵抗化が可能となるため、高感度の無線ＩＣデバイス、または高感度の割に小型の無線ＩＣデバイスが得られる。 In the present embodiment, at least a part of the large-diameter loop and the small-diameter loop constituting the helical coil is composed of a metal member (columnar conductor). Therefore, the DCR of the large-diameter loop and the small-diameter loop can be reduced as compared with the case where the sintered metal body is formed by firing the conductive paste, or the thin-film metal body is formed by etching the conductive thin film. A lossy helical coil is obtained. Further, since the resistance of the entire helical coil can be reduced, a highly sensitive wireless IC device or a small wireless IC device for high sensitivity can be obtained.

（２）上記（１）において、前記第２部分は、前記第２面に形成され、前記小径ループの一部を構成する第２小径導体パターンと、前記第２面に形成され、前記大径ループの一部を構成する第２大径導体パターンとを含んでいてもよい。 (2) In the above (1), the second portion is formed on the second surface, and is formed on the second surface with a second small-diameter conductor pattern constituting a part of the small-diameter loop, and the large-diameter A second large-diameter conductor pattern that constitutes a part of the loop may be included.

（３）上記（２）において、少なくとも前記第２大径導体パターンと前記第２小径導体パターンとが重なる部分には、第２絶縁層が挟まれることが好ましい。この構成では、第１面に直交する方向から視て、小径導体パターンと大径導体パターンとが一部重なるため、小径導体パターンおよび大径導体パターンの線幅を容易に太くでき、ヘリカル状コイルのＤＣＲをさらに低減できる。 (3) In the above (2), it is preferable that the second insulating layer is sandwiched at least in a portion where the second large-diameter conductor pattern and the second small-diameter conductor pattern overlap. In this configuration, since the small-diameter conductor pattern and the large-diameter conductor pattern partially overlap each other when viewed from the direction orthogonal to the first surface, the line width of the small-diameter conductor pattern and the large-diameter conductor pattern can be easily increased, and the helical coil DCR can be further reduced.

（４）本発明の無線ＩＣデバイスは、
第１面（ＶＳ１）および前記第１面（ＶＳ１）に対向する第２面（ＶＳ２）を有する樹脂本体（１０）と、
前記樹脂本体（１０）に埋設される第１部分と、前記樹脂本体（１０）の表面にパターニングされる第２部分とを有し、且つ、前記第１面（ＶＳ１）に沿った巻回軸（ＡＸ）を有するヘリカル状コイル（ＨＣ１）と、
前記ヘリカル状コイル（ＨＣ１）に接続されるＲＦＩＣ（４）と、
を備え、
前記ヘリカル状コイル（ＨＣ１）は、
大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）と、
前記大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）に導通し、前記巻回軸方向（Ｙ軸方向）から視て、前記大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）の外径の内側に配置される小径ループ（ＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４）と、
を備え、
前記第１部分は、前記大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）の一部を構成する一連の金属部材である大径Ｕ字状導体（Ｂｂ１等）と、前記小径ループ（ＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４）の一部を構成する一連の金属部材である小径Ｕ字状導体（Ｓｂ４等）とを含む、
前記第２部分は、前記第１面（ＶＳ１）に形成され、前記大径ループ（ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４）の一部を構成する第１大径導体パターン（Ｂｐ１１，Ｂｐ１２等）と、前記第１面に形成され、前記小径ループ（ＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４）の一部を構成する第１小径導体パターン（Ｓｐ１３，Ｓｐ１４等）とを含み、
少なくとも前記第１大径導体パターン（Ｂｐ１１，Ｂｐ１２等）と前記第１小径導体パターン（Ｓｐ１３，Ｓｐ１４等）とが重なる部分には、第１絶縁層（１）が挟まれることを特徴とする。(4) The wireless IC device of the present invention
A resin body (10) having a first surface (VS1) and a second surface (VS2) facing the first surface (VS1);
A winding shaft having a first part embedded in the resin body (10) and a second part patterned on the surface of the resin body (10) and along the first surface (VS1) A helical coil (HC1) having (AX);
RFIC (4) connected to the helical coil (HC1);
With
The helical coil (HC1)
Large diameter loops (BL1, BL2, BL3, BL4);
Conducted to the large-diameter loops (BL1, BL2, BL3, BL4), and viewed from the winding axis direction (Y-axis direction), inside the outer diameter of the large-diameter loops (BL1, BL2, BL3, BL4) A small-diameter loop (SL1, SL2, SL3, SL4) disposed;
With
The first portion includes a large-diameter U-shaped conductor (Bb1 or the like) that is a series of metal members that constitute a part of the large-diameter loop (BL1, BL2, BL3, BL4), and the small-diameter loop (SL1, SL2). , SL3, SL4) and a small-diameter U-shaped conductor (Sb4 or the like) which is a series of metal members constituting a part of
The second portion is formed on the first surface (VS1), and a first large-diameter conductor pattern (Bp11, Bp12, etc.) constituting a part of the large-diameter loop (BL1, BL2, BL3, BL4), A first small-diameter conductor pattern (Sp13, Sp14, etc.) formed on the first surface and constituting a part of the small-diameter loop (SL1, SL2, SL3, SL4);
The first insulating layer (1) is sandwiched between at least a portion where the first large-diameter conductor pattern (Bp11, Bp12, etc.) and the first small-diameter conductor pattern (Sp13, Sp14, etc.) overlap.

この構成では、ヘリカル状コイルを構成する大径ループおよび小径ループの少なくとも一部が、金属部材（Ｕ字状導体）で構成されている。そのため、導電性ペーストの焼成による焼結金属体や、導電性薄膜のエッチングによる薄膜金属体等で構成する場合に比べて大径ループおよび小径ループのＤＣＲを小さくできるので、Ｑ値が高く、低損失のヘリカル状コイルが得られる。また、ヘリカル状コイル全体の低抵抗化が可能となるため、高感度の無線ＩＣデバイス、または高感度の割に小型の無線ＩＣデバイスが得られる。 In this configuration, at least a part of the large-diameter loop and the small-diameter loop constituting the helical coil is composed of a metal member (U-shaped conductor). Therefore, the DCR of the large-diameter loop and the small-diameter loop can be reduced as compared with the case where the sintered metal body is formed by firing the conductive paste, or the thin-film metal body is formed by etching the conductive thin film. A lossy helical coil is obtained. Further, since the resistance of the entire helical coil can be reduced, a highly sensitive wireless IC device or a small wireless IC device for high sensitivity can be obtained.

（５）上記（１）から（４）のいずれかにおいて、第１主面および第２主面を有する配線板をさらに備え、前記配線板は、前記第２主面が前記樹脂本体の内側に埋設し、前記第１主面が前記樹脂本体から露出するように配置され、前記ＲＦＩＣは、前記第２主面に実装され、少なくとも一部が前記樹脂本体に埋設されていてもよい。 (5) In any one of the above (1) to (4), the circuit board further includes a wiring board having a first main surface and a second main surface, and the wiring board has the second main surface inside the resin main body. The RFIC is mounted on the second main surface, and at least a part of the RFIC is embedded in the resin main body.

（６）上記（１）から（５）のいずれかにおいて、前記大径ループおよび前記小径ループは、前記第２面を平面視して、前記巻回軸方向に沿って隙間なく配列されることが好ましい。この構成により、ヘリカル状コイルに発生した磁束、互いに隣接する大径ループと小径ループとの間隙から漏れ難い。そのため、高いインダクタンス値を有するヘリカル状コイルを構成できる。 (6) In any one of (1) to (5), the large-diameter loop and the small-diameter loop are arranged without gaps along the winding axis direction when the second surface is viewed in plan. Is preferred. With this configuration, the magnetic flux generated in the helical coil is hardly leaked from the gap between the large-diameter loop and the small-diameter loop adjacent to each other. Therefore, a helical coil having a high inductance value can be configured.

（７）上記（１）から（６）のいずれかにおいて、前記大径ループおよび前記小径ループは、前記第１面に平行な方向、且つ前記巻回軸方向に直交する方向から視て、前記巻回軸方向に沿って隙間なく配列されることが好ましい。この構成により、ヘリカル状コイルに発生した磁束が、互いに隣接する大径ループと小径ループとの間隙から漏れ難い。そのため、高いインダクタンス値を有するヘリカル状コイルを構成できる。 (7) In any one of (1) to (6), the large-diameter loop and the small-diameter loop are viewed from a direction parallel to the first surface and a direction orthogonal to the winding axis direction, It is preferable that they are arranged without gaps along the winding axis direction. With this configuration, the magnetic flux generated in the helical coil is difficult to leak from the gap between the large-diameter loop and the small-diameter loop that are adjacent to each other. Therefore, a helical coil having a high inductance value can be configured.

（８）上記（１）から（７）のいずれかにおいて、前記ヘリカル状コイルは、前記大径ループおよび前記小径ループが、前記巻回軸方向に交互に順次配列され、且つ、交互に順次接続されて構成されることが好ましい。この構成により、ターン数の割に占有面積（特に巻回軸方向の寸法）が小さなヘリカル状コイルを実現できる。また、この構成により、インダクタンスに寄与しない導体を短くできるため、ヘリカル状コイルのＤＣＲをさらに低減できる。 (8) In any one of the above (1) to (7), the helical coil includes the large-diameter loop and the small-diameter loop arranged alternately in the winding axis direction and alternately connected It is preferable to be configured. With this configuration, a helical coil having a small occupation area (especially a dimension in the direction of the winding axis) relative to the number of turns can be realized. Also, with this configuration, the conductor that does not contribute to inductance can be shortened, so that the DCR of the helical coil can be further reduced.

（９）上記（１）から（８）のいずれかにおいて、前記大径ループの数および前記小径ループの数は複数であり、複数の前記大径ループは、互いに接続されてヘリカル状の大径コイルを構成し、複数の前記小径ループは、互いに接続されてヘリカル状の小径コイルを構成し、前記ヘリカル状コイルは、前記大径コイルに前記小径コイルが接続されて構成されることが好ましい。この構成により、小型の割にターン数の多いヘリカル状コイルを容易に構成できる。 (9) In any one of the above (1) to (8), the number of the large diameter loops and the number of the small diameter loops are plural, and the plurality of large diameter loops are connected to each other to form a helical large diameter Preferably, the plurality of small diameter loops are connected to each other to form a helical small diameter coil, and the helical coil is configured by connecting the small diameter coil to the large diameter coil. With this configuration, a helical coil having a large number of turns for a small size can be easily configured.

（１０）上記（９）において、前記巻回軸方向における前記大径コイルの第１端から第２端へ向かう延伸方向は、前記巻回軸方向における前記小径コイルの第１端から第２端へ向かう延伸方向とは逆方向であり、前記大径コイルの前記第２端は、前記小径コイルの前記第１端に接続され、前記巻回軸方向における大径コイルの形成領域の少なくとも一部は、前記巻回軸方向における小径コイルの形成領域に重なることが好ましい。この構成により、インダクタンスに寄与しない導体を短くできるため、ヘリカル状コイルのＤＣＲをさらに低減できる。 (10) In the above (9), the extending direction from the first end of the large-diameter coil to the second end in the winding axis direction is from the first end to the second end of the small-diameter coil in the winding axis direction. The second end of the large-diameter coil is connected to the first end of the small-diameter coil, and at least a part of the formation area of the large-diameter coil in the winding axis direction. Preferably overlaps with the formation region of the small-diameter coil in the winding axis direction. With this configuration, the conductor that does not contribute to the inductance can be shortened, so that the DCR of the helical coil can be further reduced.

（１１）第１面および前記第１面に対向する第２面を有する樹脂本体と、
第１小径柱状導体、第２小径柱状導体、第１小径導体パターンおよび第２小径導体パターンで構成される小径ループと、第１大径柱状導体、第２大径柱状導体、第１大径導体パターンおよび第２大径導体パターンで構成される大径ループとを有するヘリカル状コイルと、
前記ヘリカル状コイルに接続されるＲＦＩＣと、
を備え、
少なくとも前記第１大径導体パターンと前記第１小径導体パターンとが重なる部分には、第１絶縁層が挟まれ、
少なくとも前記第２大径導体パターンと前記第２小径導体パターンとが重なる部分には、第２絶縁層が挟まれる、本発明の無線ＩＣデバイスの製造方法は、
支持台に前記ＲＦＩＣを実装する第１工程と、
前記支持台に、前記第１小径柱状導体、前記第２小径柱状導体、前記第１大径柱状導体および前記第２大径柱状導体の各々の第１端側を立てる第２工程と、
前記第１工程および前記第２工程の後に、前記支持台に、前記ＲＦＩＣ、前記第１小径柱状導体、前記第２小径柱状導体、前記第１大径柱状導体および前記第２大径柱状導体の各々の少なくとも一部が埋設する高さまで前記樹脂本体を被覆する第３工程と、
前記第３工程の後に、前記第２面に、前記第１小径柱状導体の第２端と前記第２小径柱状導体との間を接続する前記第２小径導体パターンを形成する第４工程と、
前記第４工程の後に、少なくとも前記第２小径導体パターンの表面の一部に、前記第２絶縁層を形成する第５工程と、
前記第５工程の後に、前記第２面および前記第２絶縁層の表面に、前記第１大径柱状導体の第２端と前記第２大径柱状導体の第２端との間を接続する前記第２大径導体パターンを形成する第６工程と、
前記第３工程の後に、前記樹脂本体から前記支持台を取り除く第７工程と、
前記第７工程の後に、前記第１面に、前記第１小径柱状導体の第１端または前記第２小径柱状導体の第１端の少なくとも一方に接続される前記第１小径導体パターンを形成する第８工程と、
前記第８工程の後に、少なくとも前記第１小径導体パターンの表面の一部に、前記第１絶縁層を形成する第９工程と、
前記第９工程の後に、前記第１面および前記第１絶縁層の表面に、前記第１大径柱状導体の第１端または前記第２大径柱状導体の第１端の少なくとも一方に接続される前記第１大径導体パターンを形成する第１０工程と、
を備えることを特徴とする。(11) a resin main body having a first surface and a second surface facing the first surface;
A small-diameter loop composed of a first small-diameter columnar conductor, a second small-diameter columnar conductor, a first small-diameter conductor pattern, and a second small-diameter conductor pattern, a first large-diameter columnar conductor, a second large-diameter columnar conductor, and a first large-diameter conductor A helical coil having a pattern and a large diameter loop composed of a second large diameter conductor pattern;
RFIC connected to the helical coil;
With
At least a portion where the first large-diameter conductor pattern and the first small-diameter conductor pattern overlap each other, a first insulating layer is sandwiched between them,
The method of manufacturing the wireless IC device of the present invention, in which the second insulating layer is sandwiched at least in a portion where the second large diameter conductor pattern and the second small diameter conductor pattern overlap,
A first step of mounting the RFIC on a support base;
A second step of standing on the support stand the first end side of each of the first small diameter columnar conductor, the second small diameter columnar conductor, the first large diameter columnar conductor, and the second large diameter columnar conductor;
After the first step and the second step, the RFIC, the first small-diameter columnar conductor, the second small-diameter columnar conductor, the first large-diameter columnar conductor, and the second large-diameter columnar conductor are placed on the support base. A third step of covering the resin body to a height at which at least a part of each is embedded;
A fourth step of forming, after the third step, the second small-diameter conductor pattern connecting the second end of the first small-diameter columnar conductor and the second small-diameter columnar conductor on the second surface;
A fifth step of forming the second insulating layer on at least a part of the surface of the second small-diameter conductor pattern after the fourth step;
After the fifth step, the second end of the first large-diameter columnar conductor and the second end of the second large-diameter columnar conductor are connected to the second surface and the surface of the second insulating layer. A sixth step of forming the second large-diameter conductor pattern;
After the third step, a seventh step of removing the support base from the resin body;
After the seventh step, the first small-diameter conductor pattern connected to at least one of the first end of the first small-diameter columnar conductor or the first end of the second small-diameter columnar conductor is formed on the first surface. An eighth step;
A ninth step of forming the first insulating layer on at least a part of the surface of the first small-diameter conductor pattern after the eighth step;
After the ninth step, the first surface and the surface of the first insulating layer are connected to at least one of the first end of the first large-diameter columnar conductor or the first end of the second large-diameter columnar conductor. A tenth step of forming the first large-diameter conductor pattern;
It is characterized by providing.

上記製造方法によれば、所望のインダクタンス値を有し、且つ、優れた電気特性を有する、特に直流抵抗の低減が可能な小型のヘリカル状コイルを備える無線ＩＣデバイスを容易に製造できる。 According to the above manufacturing method, it is possible to easily manufacture a wireless IC device including a small helical coil having a desired inductance value and excellent electrical characteristics, and particularly capable of reducing direct current resistance.

（１２）第１面および前記第１面に対向する第２面を有する樹脂本体と、
小径Ｕ字状導体および第１小径導体パターンで構成される小径ループと、大径Ｕ字状導体および第１大径導体パターンで構成される大径ループとを有するヘリカル状コイルと、
前記ヘリカル状コイルに接続されるＲＦＩＣと、
を備え、
少なくとも前記第１大径導体パターンと前記第１小径導体パターンとが重なる部分には、第１絶縁層が挟まれる、本発明の無線ＩＣデバイスの製造方法は、
支持台に前記ＲＦＩＣを実装する第１工程と、
前記支持台に、一連の金属部材である前記大径Ｕ字状導体および前記小径Ｕ字状導体の各々の両端を立てる第１１工程と、
前記第１工程および前記第１１工程の後に、前記支持台に、前記ＲＦＩＣ、前記大径Ｕ字状導体および前記小径Ｕ字状導体の各々の少なくとも一部が埋設する高さまで前記樹脂本体を被覆する第１２工程と、
前記第１２工程の後に、前記樹脂本体から前記支持台を取り除く第１３工程と、
前記第１３工程の後に、前記第１面に、前記小径Ｕ字状導体の一端に接続される前記第１小径導体パターンを形成する第１４工程と、
前記第１４工程の後に、少なくとも前記第１小径導体パターンの表面の一部に、前記第１絶縁層を形成する第１５工程と、
前記第１５工程の後に、前記第１面および前記第１絶縁層の表面に、前記大径Ｕ字状導体の一端に接続される前記第１大径導体パターンを形成する第１６工程と、
を備えることを特徴とする。(12) a resin body having a first surface and a second surface facing the first surface;
A helical coil having a small-diameter loop composed of a small-diameter U-shaped conductor and a first small-diameter conductor pattern, and a large-diameter loop composed of a large-diameter U-shaped conductor and a first large-diameter conductor pattern;
RFIC connected to the helical coil;
With
The method of manufacturing a wireless IC device of the present invention, in which a first insulating layer is sandwiched at least in a portion where the first large-diameter conductor pattern and the first small-diameter conductor pattern overlap,
A first step of mounting the RFIC on a support base;
An eleventh step of standing both ends of each of the large-diameter U-shaped conductor and the small-diameter U-shaped conductor, which are a series of metal members, on the support base;
After the first step and the eleventh step, the support body is covered with the resin body to a height at which at least a part of each of the RFIC, the large-diameter U-shaped conductor, and the small-diameter U-shaped conductor is embedded. And a twelfth step
After the twelfth step, a thirteenth step of removing the support base from the resin body;
After the thirteenth step, a fourteenth step of forming the first small-diameter conductor pattern connected to one end of the small-diameter U-shaped conductor on the first surface;
A fifteenth step of forming the first insulating layer on at least part of the surface of the first small-diameter conductor pattern after the fourteenth step;
A sixteenth step of forming the first large-diameter conductor pattern connected to one end of the large-diameter U-shaped conductor on the first surface and the surface of the first insulating layer after the fifteenth step;
It is characterized by providing.

上記製造方法によれば、所望のインダクタンス値を有し、且つ、さらに優れた電気特性を有する、特に直流抵抗の低減が可能な小型のヘリカル状コイルを備える無線ＩＣデバイスを容易に製造できる。 According to the above manufacturing method, it is possible to easily manufacture a wireless IC device including a small helical coil having a desired inductance value and further excellent electrical characteristics, and particularly capable of reducing direct current resistance.

（１３）上記（１２）において、前記無線ＩＣデバイスは、前記第１小径柱状導体、前記第２小径柱状導体、前記第１大径柱状導体および前記第２大径柱状導体が埋設された樹脂ブロックをさらに備え、前記第２工程は、前記支持台に前記樹脂ブロックを実装する工程をさらに有することが好ましい。上記製造方法によれば、予め柱状導体が埋設された樹脂ブロックを用いるため、柱状導体を支持台に建てる際に、隣接する柱状導体同士の接触を考える必要がない。したがって、隣接する柱状導体同士の間隙が小さい無線ＩＣデバイスを容易に実現できる。 (13) In the above (12), the wireless IC device is a resin block in which the first small-diameter columnar conductor, the second small-diameter columnar conductor, the first large-diameter columnar conductor, and the second large-diameter columnar conductor are embedded. It is preferable that the second step further includes a step of mounting the resin block on the support base. According to the above manufacturing method, since the resin block in which the columnar conductors are embedded beforehand is used, it is not necessary to consider contact between adjacent columnar conductors when the columnar conductors are built on the support base. Therefore, a wireless IC device in which the gap between adjacent columnar conductors is small can be easily realized.

（１４）上記（１１）から（１３）のいずれかにおいて、前記第１工程は、第１主面および前記第１主面に対向する第２主面を有する配線板の前記第２主面に、前記ＲＦＩＣを実装する工程と、第１主面側を前記支持台に実装する工程と、をさらに有していてもよい。 (14) In any one of the above (11) to (13), the first step is performed on the second main surface of the wiring board having a first main surface and a second main surface opposite to the first main surface. The step of mounting the RFIC and the step of mounting the first main surface side on the support base may be further included.

（１５）上記（１４）において、前記支持台は主面に粘着層を有し、前記第１工程は、前記配線板の第１主面側を前記粘着層側にして固着する工程をさらに有していてもよい。 (15) In the above (14), the support base has an adhesive layer on a main surface, and the first step further includes a step of fixing the first main surface side of the wiring board with the adhesive layer side. You may do it.

（１６）上記（１１）において、前記支持台は主面に粘着層を有し、前記第２工程は、前記第１小径柱状導体、前記第２小径柱状導体、前記第１大径柱状導体および前記第２大径柱状導体の各々の第１端側を、前記粘着層側にして固着する工程をさらに有することが好ましい。上記製造方法によれば、粘着層を有する支持台を用いることにより、柱状導体を強固に固定することできる。そのため、小径の柱状導体もヘリカル状コイルの製造に使用することができ、巻回数が多く、インダクタンスの高いヘリカル状コイルを製造することができる。 (16) In the above (11), the support base has an adhesive layer on a main surface, and the second step includes the first small-diameter columnar conductor, the second small-diameter columnar conductor, the first large-diameter columnar conductor, and It is preferable that the method further includes a step of fixing the first end of each of the second large-diameter columnar conductors to the adhesive layer side. According to the said manufacturing method, a columnar conductor can be firmly fixed by using the support stand which has an adhesion layer. Therefore, a columnar conductor having a small diameter can also be used for manufacturing a helical coil, and a helical coil having a large number of turns and high inductance can be manufactured.

（１７）上記（１２）において、前記支持台が主面に粘着層を有し、前記第１１工程は、前記大径Ｕ字状導体および前記小径Ｕ字状導体の各々の両端を、前記粘着層側にして固着する工程をさらに有することが好ましい。上記製造方法によれば、粘着層を有する支持台を用いることにより、大径Ｕ字状導体および小径Ｕ字状導体を強固に固定することできる。そのため、小径のＵ字状導体もヘリカル状コイルの製造に使用することができ、巻回数が多く、インダクタンスの高いヘリカル状コイルを製造することができる。 (17) In the above (12), the support base has an adhesive layer on a main surface, and the eleventh step is configured so that both ends of the large-diameter U-shaped conductor and the small-diameter U-shaped conductor are bonded to the adhesive. It is preferable to further include a step of fixing on the layer side. According to the said manufacturing method, a large diameter U-shaped conductor and a small diameter U-shaped conductor can be firmly fixed by using the support stand which has an adhesion layer. Therefore, a small-diameter U-shaped conductor can also be used for manufacturing a helical coil, and a helical coil having a large number of turns and high inductance can be manufactured.

本発明によれば、所望のインダクタンス値を有し、且つ、優れた電気特性を有する、特に直流抵抗の低減が可能な小型のヘリカル状コイルを備える無線ＩＣデバイスを実現できる。 According to the present invention, it is possible to realize a wireless IC device including a small helical coil having a desired inductance value and excellent electrical characteristics, particularly capable of reducing DC resistance.

本発明の無線ＩＣデバイスの製造方法によれば、所望のインダクタンス値を有し、且つ、優れた電気特性を有する、特に直流抵抗の低減が可能な小型のヘリカル状コイルを備える無線ＩＣデバイスを容易に製造できる。 According to the method for manufacturing a wireless IC device of the present invention, a wireless IC device having a small helical coil having a desired inductance value and excellent electrical characteristics, particularly capable of reducing a direct current resistance, can be easily obtained. Can be manufactured.

図１は第１の実施形態に係る無線ＩＣデバイス１０１の斜視図である。FIG. 1 is a perspective view of a wireless IC device 101 according to the first embodiment. 図２（Ａ）は無線ＩＣデバイス１０１の平面図であり、図２（Ｂ）は無線ＩＣデバイス１０１の右側面図であり、図２（Ｃ）は無線ＩＣデバイス１０１の底面図である。2A is a plan view of the wireless IC device 101, FIG. 2B is a right side view of the wireless IC device 101, and FIG. 2C is a bottom view of the wireless IC device 101. 図３（Ａ）は無線ＩＣデバイス１０１の断面図であり、図３（Ｂ）は無線ＩＣデバイス１０１の異なる部分の断面図である。3A is a cross-sectional view of the wireless IC device 101, and FIG. 3B is a cross-sectional view of a different part of the wireless IC device 101. 図４は、無線ＩＣデバイス１０１が備えるヘリカル状コイルＨＣ１の各導体部分を模式的に示した斜視図である。FIG. 4 is a perspective view schematically showing each conductor portion of the helical coil HC1 included in the wireless IC device 101. As shown in FIG. 図５（Ａ）は、ヘリカル状コイルＨＣ１が備える大径ループの導体部分を模式的に示した斜視図であり、図５（Ｂ）はヘリカル状コイルＨＣ１が備える小径ループの導体部分を模式的に示した斜視図である。FIG. 5A is a perspective view schematically showing a conductor portion of a large-diameter loop provided in the helical coil HC1, and FIG. 5B is a schematic diagram showing a conductor portion of a small-diameter loop provided in the helical coil HC1. It is the perspective view shown in. 図６は無線ＩＣデバイス１０１の回路図である。FIG. 6 is a circuit diagram of the wireless IC device 101. 図７（Ａ）図２（Ａ）におけるＤＰ１部の拡大図であり、図７（Ｂ）は図７（Ａ）におけるＡ−Ａ断面詳細図である。7A is an enlarged view of the DP1 portion in FIG. 2A, and FIG. 7B is a detailed cross-sectional view taken along the line AA in FIG. 7A. 図８は無線ＩＣデバイス１０１の製造工程を順に示す断面図である。FIG. 8 is a cross-sectional view illustrating the manufacturing process of the wireless IC device 101 in order. 図９は無線ＩＣデバイス１０１の製造工程を順に示す断面図である。FIG. 9 is a cross-sectional view sequentially illustrating the manufacturing process of the wireless IC device 101. 図１０（Ａ）は第２の実施形態に係る無線ＩＣデバイス１０２の断面図であり、図１０（Ｂ）は、図１０（Ａ）におけるＢ−Ｂ部分での無線ＩＣデバイス１０２の断面図である。FIG. 10A is a cross-sectional view of the wireless IC device 102 according to the second embodiment, and FIG. 10B is a cross-sectional view of the wireless IC device 102 taken along the line BB in FIG. is there. 図１１は無線ＩＣデバイス１０２の製造工程の一部を順に示す断面図である。FIG. 11 is a cross-sectional view illustrating a part of the manufacturing process of the wireless IC device 102 in order. 図１２は第３の実施形態に係る無線ＩＣデバイス１０３の断面図である。FIG. 12 is a cross-sectional view of the wireless IC device 103 according to the third embodiment. 図１３は無線ＩＣデバイス１０３の製造工程を順に示す断面図である。FIG. 13 is a cross-sectional view illustrating the manufacturing process of the wireless IC device 103 in order. 図１４は無線ＩＣデバイス１０３の製造工程を順に示す断面図である。FIG. 14 is a cross-sectional view sequentially illustrating the manufacturing process of the wireless IC device 103. 図１５は無線ＩＣデバイス１０３の製造工程を順に示す断面図である。FIG. 15 is a cross-sectional view sequentially illustrating the manufacturing process of the wireless IC device 103. 図１６は第４の実施形態に係る無線ＩＣデバイス１０４の断面図である。FIG. 16 is a cross-sectional view of the wireless IC device 104 according to the fourth embodiment. 図１７は第５の実施形態に係るヘリカル状コイルＨＣ５の各導体部分を模式的に示した斜視図である。FIG. 17 is a perspective view schematically showing each conductor portion of the helical coil HC5 according to the fifth embodiment. 図１８（Ａ）は、ヘリカル状コイルＨＣ５が備える大径ループの導体部分を模式的に示した斜視図であり、図１８（Ｂ）は、ヘリカル状コイルＨＣ５が備える小径ループの導体部分を模式的に示した斜視図である。FIG. 18A is a perspective view schematically showing a conductor portion of a large-diameter loop provided in the helical coil HC5, and FIG. 18B schematically shows a conductor portion of a small-diameter loop provided in the helical coil HC5. FIG. 図１９は第６の実施形態に係る無線ＩＣデバイス１０６の断面図である。FIG. 19 is a cross-sectional view of the wireless IC device 106 according to the sixth embodiment. 図２０は無線ＩＣデバイス１０６の製造工程を順に示す断面図である。FIG. 20 is a cross-sectional view sequentially illustrating the manufacturing process of the wireless IC device 106. 図２１は無線ＩＣデバイス１０６の製造工程を順に示す断面図である。FIG. 21 is a cross-sectional view sequentially illustrating the manufacturing process of the wireless IC device 106. 図２２は第７の実施形態に係る無線ＩＣデバイス１０７の断面図である。FIG. 22 is a cross-sectional view of the wireless IC device 107 according to the seventh embodiment.

以降、図を参照して幾つかの具体的な例を挙げて、本発明を実施するための複数の形態を示す。各図中には同一箇所に同一符号を付している。要点の説明または理解の容易性を考慮して、便宜上実施形態を分けて示すが、異なる実施形態で示した構成の部分的な置換または組み合わせが可能である。第２の実施形態以降では第１の実施形態と共通の事柄についての記述を省略し、異なる点についてのみ説明する。特に、同様の構成による同様の作用効果については実施形態毎には逐次言及しない。 Hereinafter, several specific examples will be given with reference to the drawings to show a plurality of modes for carrying out the present invention. In each figure, the same reference numerals are assigned to the same portions. In consideration of ease of explanation or understanding of the main points, the embodiments are shown separately for convenience, but the components shown in different embodiments can be partially replaced or combined. In the second and subsequent embodiments, description of matters common to the first embodiment is omitted, and only different points will be described. In particular, the same operation effect by the same configuration will not be sequentially described for each embodiment.

以降に示す幾つかの実施形態に係るヘリカル状コイルは、例えば磁束の放射素子としてＨＦ帯やＬＦ帯、ＵＨＦ帯、ＳＨＦ帯等で使用することのできるコイルアンテナである。また、上記ヘリカル状コイルはインダクタ素子として使用することもできる。そのため、特に説明がない場合、以降に示す幾つかの実施形態に係るヘリカル状コイルはコイルアンテナおよびインダクタ素子の両方についての例示である。また、以降に示す幾つかの実施形態に係る無線ＩＣデバイスは、ＲＦＩＣと樹脂本体とヘリカル状コイルとを備え、例えば管理対象の物品に設けられるチップ状のＲＦＩＤタグ等のＲＦＩＤ通信用デバイスである。上記ＲＦＩＤタグが付される物品とは、例えば玩具や携帯電話等の携帯型情報端末、足場材のような建材、ガスボンベ等の産業材である。 The helical coils according to some embodiments described below are coil antennas that can be used in, for example, the HF band, the LF band, the UHF band, the SHF band, and the like as magnetic flux radiating elements. The helical coil can also be used as an inductor element. Therefore, unless otherwise specified, helical coils according to some embodiments described below are examples of both a coil antenna and an inductor element. In addition, wireless IC devices according to some embodiments described below include an RFIC, a resin main body, and a helical coil, and are, for example, RFID communication devices such as chip-like RFID tags provided on articles to be managed. . The article to which the RFID tag is attached is, for example, portable information terminals such as toys and mobile phones, building materials such as scaffolding materials, and industrial materials such as gas cylinders.

《第１の実施形態》
図１は第１の実施形態に係る無線ＩＣデバイス１０１の斜視図である。図２（Ａ）は無線ＩＣデバイス１０１の平面図であり、図２（Ｂ）は無線ＩＣデバイス１０１の右側面図であり、図２（Ｃ）は無線ＩＣデバイス１０１の底面図である。図３（Ａ）は無線ＩＣデバイス１０１の断面図であり、図３（Ｂ）は無線ＩＣデバイス１０１の異なる部分の断面図である。なお、図２（Ａ）および図２（Ｃ）では、構造を分かりやすくするために、第１絶縁層１および第２絶縁層２をハッチングして図示している。図３（Ａ）および図３（Ｂ）において、一部の厚みは誇張して図示している。以降の各実施形態における断面図についても同様である。また、図１、図２（Ａ）、図２（Ｂ）および図２（Ｃ）では、構造を分かりやすくするため、保護層６２の図示を省略している。<< First Embodiment >>
FIG. 1 is a perspective view of a wireless IC device 101 according to the first embodiment. 2A is a plan view of the wireless IC device 101, FIG. 2B is a right side view of the wireless IC device 101, and FIG. 2C is a bottom view of the wireless IC device 101. 3A is a cross-sectional view of the wireless IC device 101, and FIG. 3B is a cross-sectional view of a different part of the wireless IC device 101. In FIGS. 2A and 2C, the first insulating layer 1 and the second insulating layer 2 are hatched for easy understanding of the structure. 3A and 3B, some thicknesses are exaggerated. The same applies to the sectional views in the following embodiments. Further, in FIGS. 1, 2A, 2B, and 2C, the protective layer 62 is not shown for easy understanding of the structure.

無線ＩＣデバイス１０１は、長手方向がＸ軸方向に一致する直方体状であり、樹脂本体１０、ヘリカル状コイル（後に詳述する）、第１絶縁層１、第２絶縁層２、配線板３、ＲＦＩＣ４、保護層６１，６２を備える。 The wireless IC device 101 has a rectangular parallelepiped shape whose longitudinal direction coincides with the X-axis direction, and includes a resin main body 10, a helical coil (described in detail later), a first insulating layer 1, a second insulating layer 2, a wiring board 3, An RFIC 4 and protective layers 61 and 62 are provided.

樹脂本体１０は長手方向がＸ軸方向に一致する直方体状であり、第１面ＶＳ１、および第１面ＶＳ１に対向する第２面ＶＳ２を有する。樹脂本体１０は例えばエポキシ樹脂等の熱硬化性樹脂である。 The resin body 10 has a rectangular parallelepiped shape whose longitudinal direction coincides with the X-axis direction, and has a first surface VS1 and a second surface VS2 facing the first surface VS1. The resin body 10 is a thermosetting resin such as an epoxy resin.

図４は、無線ＩＣデバイス１０１が備えるヘリカル状コイルＨＣ１の各導体部分を模式的に示した斜視図である。図５（Ａ）は、ヘリカル状コイルＨＣ１が備える大径ループの導体部分を模式的に示した斜視図であり、図５（Ｂ）はヘリカル状コイルＨＣ１が備える小径ループの導体部分を模式的に示した斜視図である。図４では、ヘリカル状コイルＨＣ１の構造を解りやすくするため、小径ループを破線で図示している。 FIG. 4 is a perspective view schematically showing each conductor portion of the helical coil HC1 included in the wireless IC device 101. As shown in FIG. FIG. 5A is a perspective view schematically showing a conductor portion of a large-diameter loop provided in the helical coil HC1, and FIG. 5B is a schematic diagram showing a conductor portion of a small-diameter loop provided in the helical coil HC1. It is the perspective view shown in. In FIG. 4, the small-diameter loop is shown by a broken line in order to make the structure of the helical coil HC1 easy to understand.

ヘリカル状コイルＨＣ１は、樹脂本体１０の第１面ＶＳ１に沿った巻回軸ＡＸを有し、複数の大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４、複数の小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４を備える。ヘリカル状コイルＨＣ１は、樹脂本体１０に埋設される第１部分（後に詳述する）と、樹脂本体１０の表面にパターニングされる第２部分（後に詳述する）とを有する。本実施形態に係るヘリカル状コイルＨＣ１の巻回軸ＡＸは、Ｙ軸方向に平行である。 The helical coil HC1 has a winding axis AX along the first surface VS1 of the resin body 10, and includes a plurality of large diameter loops BL1, BL2, BL3, BL4 and a plurality of small diameter loops SL1, SL2, SL3, SL4. Prepare. The helical coil HC1 has a first portion (described in detail later) embedded in the resin body 10 and a second portion (described in detail later) patterned on the surface of the resin body 10. The winding axis AX of the helical coil HC1 according to the present embodiment is parallel to the Y-axis direction.

複数の小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４は、後に詳述するように、Ｙ軸方向（本発明における「巻回軸方向」に相当する）から視て、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４の外径の内側に配置される。本実施形態では、小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４の各々が略同形状であり、樹脂本体１０の第１面ＶＳ１に対して垂直である。 The plurality of small-diameter loops SL1, SL2, SL3, SL4 are large-diameter loops BL1, BL2, BL3, as viewed from the Y-axis direction (corresponding to the “winding axis direction” in the present invention) as will be described in detail later. It is arranged inside the outer diameter of BL4. In the present embodiment, each of the small-diameter loops SL1, SL2, SL3, SL4 has substantially the same shape, and is perpendicular to the first surface VS1 of the resin body 10.

複数の小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４は、第１小径柱状導体１１，１２，１３，１４、第２小径柱状導体２１，２２，２３，２４、第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４および第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４で構成される。具体的には、小径ループＳＬ１は、第１小径柱状導体１１、第２小径柱状導体、第１小径導体パターンＳｐ１１および第２小径導体パターンＳｐ２１で構成される。小径ループＳＬ２は、第１小径柱状導体１２、第２小径柱状導体２２、第１小径導体パターンＳｐ１２および第２小径導体パターンＳｐ２２で構成される。小径ループＳＬ３は、第１小径柱状導体１３、第２小径柱状導体２３、第１小径導体パターンＳｐ１３および第２小径導体パターンＳｐ２３で構成される。小径ループＳＬ４は、第１小径柱状導体１４、第２小径柱状導体、第１小径導体パターンＳｐ１４および第２小径導体パターンＳｐ２４で構成される。 The plurality of small-diameter loops SL1, SL2, SL3, SL4 include first small-diameter columnar conductors 11, 12, 13, 14, second small-diameter columnar conductors 21, 22, 23, 24, first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14 and second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24 are included. Specifically, the small-diameter loop SL1 includes a first small-diameter columnar conductor 11, a second small-diameter columnar conductor, a first small-diameter conductor pattern Sp11, and a second small-diameter conductor pattern Sp21. The small-diameter loop SL2 includes a first small-diameter columnar conductor 12, a second small-diameter columnar conductor 22, a first small-diameter conductor pattern Sp12, and a second small-diameter conductor pattern Sp22. The small-diameter loop SL3 includes a first small-diameter columnar conductor 13, a second small-diameter columnar conductor 23, a first small-diameter conductor pattern Sp13, and a second small-diameter conductor pattern Sp23. The small-diameter loop SL4 includes a first small-diameter columnar conductor 14, a second small-diameter columnar conductor, a first small-diameter conductor pattern Sp14, and a second small-diameter conductor pattern Sp24.

第１小径柱状導体１１，１２，１３，１４および第２小径柱状導体２１，２２，２３，２４は、Ｚ軸方向（本発明における樹脂本体の「第１面に直交する方向」に相当する）に延伸し、且つ、Ｙ軸方向に配列される柱状の金属体である。第１小径柱状導体１１，１２，１３，１４および第２小径柱状導体２１，２２，２３，２４は、各々の第１端および第２端以外が樹脂本体１０に埋設されている。第１小径柱状導体１１，１２，１３，１４および第２小径柱状導体２１，２２，２３，２４は、いずれも例えば円柱状のＣｕ製ピンであり、例えば、断面円形のＣｕワイヤーを所定長単位で切断することで得られる。なお、この断面形状は矩形や多角形等であってもよい。 The first small-diameter columnar conductors 11, 12, 13, and 14 and the second small-diameter columnar conductors 21, 22, 23, and 24 are in the Z-axis direction (corresponding to the “direction perpendicular to the first surface” of the resin body in the present invention). And a columnar metal body arranged in the Y-axis direction. The first small-diameter columnar conductors 11, 12, 13, 14 and the second small-diameter columnar conductors 21, 22, 23, 24 are embedded in the resin body 10 except for the first and second ends. Each of the first small-diameter columnar conductors 11, 12, 13, 14 and the second small-diameter columnar conductors 21, 22, 23, and 24 is, for example, a cylindrical Cu pin. For example, a Cu wire having a circular cross section is a predetermined length unit. It is obtained by cutting with. The cross-sectional shape may be a rectangle or a polygon.

本実施形態では、これら第１小径柱状導体１１，１２，１３，１４および第２小径柱状導体２１，２２，２３，２４が、樹脂本体１０に埋設されるヘリカル状コイルＨＣ１の「第１部分」に相当する。 In the present embodiment, the first small-diameter columnar conductors 11, 12, 13, 14 and the second small-diameter columnar conductors 21, 22, 23, 24 are “first portions” of the helical coil HC 1 embedded in the resin body 10. It corresponds to.

第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４は、図２（Ａ）および図２（Ｂ）に示すように、樹脂本体１０の第１面ＶＳ１に形成される導体パターンであり、柱状導体（第１小径柱状導体または第２小径柱状導体）の第１端に接続される。本実施形態では、第１小径導体パターンＳｐ１１が、第１小径柱状導体１２第１端と第２小径柱状導体２１の第１端とを接続する。第１小径導体パターンＳｐ１２は、第１小径柱状導体１３の第１端と第２小径柱状導体２２の第１端とを接続する。第１小径導体パターンＳｐ１３は、第１小径柱状導体１４の第１端と第２小径柱状導体２３の第１端とを接続する。第１小径導体パターンＳｐ１４は、第２小径柱状導体２４の第１端とＲＦＩＣとを接続する。第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４は例えばＡｇペーストの印刷により形成した導体パターンにＣｕ等のめっき膜を被覆したものである。 The first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14 are conductor patterns formed on the first surface VS1 of the resin main body 10 as shown in FIGS. 2A and 2B, and are columnar conductors ( The first small diameter columnar conductor or the second small diameter columnar conductor) is connected to the first end. In the present embodiment, the first small-diameter conductor pattern Sp11 connects the first end of the first small-diameter columnar conductor 12 and the first end of the second small-diameter columnar conductor 21. The first small-diameter conductor pattern Sp12 connects the first end of the first small-diameter columnar conductor 13 and the first end of the second small-diameter columnar conductor 22. The first small-diameter conductor pattern Sp13 connects the first end of the first small-diameter columnar conductor 14 and the first end of the second small-diameter columnar conductor 23. The first small-diameter conductor pattern Sp14 connects the first end of the second small-diameter columnar conductor 24 and the RFIC. The first small-diameter conductor patterns Sp11, Sp12, Sp13, and Sp14 are obtained by coating a conductor film formed by printing Ag paste, for example, with a plating film such as Cu.

第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４は、図２（Ａ）および図２（Ｂ）に示すように、樹脂本体１０の第２面ＶＳ２に形成される導体パターンであり、柱状導体（第１小径柱状導体および第２小径柱状導体）の第２端に接続される。本実施形態では、第２小径導体パターンＳｐ２１が、第１小径柱状導体１１の第２端と第２小径柱状導体２１の第２端との間を接続する。第２小径導体パターンＳｐ２２は、第１小径柱状導体１２の第２端と第２小径柱状導体２２の第２端との間を接続する。第２小径導体パターンＳｐ２３は、第１小径柱状導体１３の第２端と第２小径柱状導体２３の第２端との間を接続する。第２小径導体パターンＳｐ２４は、第１小径柱状導体１４の第２端と第２小径柱状導体２４の第２端との間を接続する。第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４は例えばＡｇペーストの印刷により形成した導体パターンにＣｕ等のめっき膜を被覆したものである。 2nd small diameter conductor pattern Sp21, Sp22, Sp23, Sp24 is a conductor pattern formed in the 2nd surface VS2 of the resin main body 10, as shown to FIG. 2 (A) and FIG. 2 (B), and columnar conductor ( The first small-diameter columnar conductor and the second small-diameter columnar conductor are connected to the second end. In the present embodiment, the second small-diameter conductor pattern Sp 21 connects the second end of the first small-diameter columnar conductor 11 and the second end of the second small-diameter columnar conductor 21. The second small-diameter conductor pattern Sp 22 connects between the second end of the first small-diameter columnar conductor 12 and the second end of the second small-diameter columnar conductor 22. The second small-diameter conductor pattern Sp 23 connects between the second end of the first small-diameter columnar conductor 13 and the second end of the second small-diameter columnar conductor 23. The second small-diameter conductor pattern Sp 24 connects the second end of the first small-diameter columnar conductor 14 and the second end of the second small-diameter columnar conductor 24. The second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24 are, for example, obtained by coating a conductor pattern formed by printing Ag paste with a plating film such as Cu.

本実施形態では、これら第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４および第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４が、樹脂本体１０の表面にパターニングされるヘリカル状コイルＨＣ１の「第２部分」に相当する。 In the present embodiment, the first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14 and the second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24 are “second” of the helical coil HC1 patterned on the surface of the resin body 10. Corresponds to “part”.

樹脂本体１０の第１面ＶＳ１および第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４の表面には、第１絶縁層１が形成されている。第１絶縁層１は、少なくとも第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４の表面の一部を被覆する絶縁体膜である。本実施形態では、図２（Ａ）、図２（Ｂ）および図３（Ｃ）等に示すように、第１絶縁層１が第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４全体を被覆する。第１絶縁層１は例えばエポキシ樹脂等の熱硬化性樹脂である。 The first insulating layer 1 is formed on the surface of the first surface VS1 of the resin body 10 and the first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14. The first insulating layer 1 is an insulator film that covers at least a part of the surface of the first small-diameter conductor pattern Sp11, Sp12, Sp13, Sp14. In the present embodiment, as shown in FIGS. 2A, 2B, 3C, etc., the first insulating layer 1 covers the entire first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14. . The first insulating layer 1 is a thermosetting resin such as an epoxy resin.

図２（Ｃ）、図３（Ａ）および図３（Ｂ）に示すように、少なくとも第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４と第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４（後に詳述する）とが重なる部分には、第１絶縁層１が挟まれる。 2C, FIG. 3A, and FIG. 3B, at least the first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14 and the first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14 ( The first insulating layer 1 is sandwiched between the portions overlapping with (described later in detail).

樹脂本体１０の第２面ＶＳ２および第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４の表面には、第２絶縁層２が形成されている。第２絶縁層２は、少なくとも第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４の表面の一部を被覆する絶縁体膜である。本実施形態では、図２（Ａ）、図２（Ｂ）および図３（Ａ）等に示すように、第２絶縁層２が第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４全体を被覆する。第２絶縁層２は例えばエポキシ樹脂等の熱硬化性樹脂である。 A second insulating layer 2 is formed on the surface of the second surface VS2 of the resin body 10 and the second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24. The second insulating layer 2 is an insulating film that covers at least part of the surface of the second small-diameter conductor pattern Sp21, Sp22, Sp23, Sp24. In the present embodiment, as shown in FIGS. 2A, 2B, 3A, etc., the second insulating layer 2 covers the entire second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24. . The second insulating layer 2 is a thermosetting resin such as an epoxy resin.

図２（Ａ）、図３（Ａ）および図３（Ｂ）に示すように、少なくとも第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４と第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４（後に詳述する）とが重なる部分には、第２絶縁層２が挟まれる。 As shown in FIGS. 2A, 3A, and 3B, at least the second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24 and the second large-diameter conductor patterns Bp21, Bp22, Bp23, Bp24 ( The second insulating layer 2 is sandwiched between the portions overlapping with (described later in detail).

本実施形態では、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４の各々が略同形状であり、樹脂本体１０の第１面ＶＳ１に対して垂直である。 In the present embodiment, each of the large-diameter loops BL1, BL2, BL3, BL4 has substantially the same shape and is perpendicular to the first surface VS1 of the resin body 10.

複数の大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４は、第１大径柱状導体３１，３２，３３，３４、第２大径柱状導体４１，４２，４３，４４、第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５および第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４で構成される。具体的には、大径ループＢＬ１は、第１大径柱状導体３１、第２大径柱状導体４１、第１大径導体パターンＢｐ１１および第２大径導体パターンＢｐ２１で構成される。大径ループＢＬ２は、第１大径柱状導体３２、第２大径柱状導体４２、第１大径導体パターンＢｐ１２および第２大径導体パターンＢｐ２２で構成される。大径ループＢＬ３は、第１大径柱状導体３３、第２大径柱状導体４３、第１大径導体パターンＢｐ１３および第２大径導体パターンＢｐ２３で構成される。大径ループＢＬ４は、第１大径柱状導体３４、第２大径柱状導体４４、第１大径導体パターンＢｐ１４，Ｂｐ１５および第２大径導体パターンＢｐ２４で構成される。 The plurality of large-diameter loops BL1, BL2, BL3, BL4 include first large-diameter columnar conductors 31, 32, 33, 34, second large-diameter columnar conductors 41, 42, 43, 44, first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14, Bp15 and second large-diameter conductor patterns Bp21, Bp22, Bp23, Bp24. Specifically, the large diameter loop BL1 includes a first large diameter columnar conductor 31, a second large diameter columnar conductor 41, a first large diameter conductor pattern Bp11, and a second large diameter conductor pattern Bp21. The large diameter loop BL2 includes a first large diameter columnar conductor 32, a second large diameter columnar conductor 42, a first large diameter conductor pattern Bp12, and a second large diameter conductor pattern Bp22. The large-diameter loop BL3 includes a first large-diameter columnar conductor 33, a second large-diameter columnar conductor 43, a first large-diameter conductor pattern Bp13, and a second large-diameter conductor pattern Bp23. The large-diameter loop BL4 includes a first large-diameter columnar conductor 34, a second large-diameter columnar conductor 44, first large-diameter conductor patterns Bp14 and Bp15, and a second large-diameter conductor pattern Bp24.

第１大径柱状導体３１，３２，３３，３４および第２大径柱状導体４１，４２，４３，４４は、Ｚ軸方向に延伸し、且つ、Ｙ軸方向に配列される柱状の金属体である。第１大径柱状導体３１，３２，３３，３４および第２大径柱状導体４１，４２，４３，４４は、各々の第１端および第２端以外が樹脂本体１０に埋設されている。第１大径柱状導体３１，３２，３３，３４および第２大径柱状導体４１，４２，４３，４４は、いずれも例えば円柱状のＣｕ製ピンであり、例えば、断面円形のＣｕワイヤーを所定長単位で切断することで得られる。なお、この断面形状は矩形や多角形等であってもよい。 The first large-diameter columnar conductors 31, 32, 33, 34 and the second large-diameter columnar conductors 41, 42, 43, 44 are columnar metal bodies that extend in the Z-axis direction and are arranged in the Y-axis direction. is there. The first large-diameter columnar conductors 31, 32, 33, and 34 and the second large-diameter columnar conductors 41, 42, 43, and 44 are embedded in the resin body 10 except for the first and second ends. Each of the first large-diameter columnar conductors 31, 32, 33, and 34 and the second large-diameter columnar conductors 41, 42, 43, and 44 is, for example, a cylindrical Cu pin. Obtained by cutting in long units. The cross-sectional shape may be a rectangle or a polygon.

本実施形態では、これら第１大径柱状導体３１，３２，３３，３４および第２大径柱状導体４１，４２，４３，４４が、樹脂本体１０に埋設されるヘリカル状コイルＨＣ１の「第１部分」に相当する。 In the present embodiment, the first large-diameter columnar conductors 31, 32, 33, 34 and the second large-diameter columnar conductors 41, 42, 43, 44 are “first” of the helical coil HC 1 embedded in the resin body 10. Corresponds to “part”.

第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５は、図２（Ａ）および図２（Ｂ）に示すように、樹脂本体１０の第１面ＶＳ１および第１絶縁層１の表面に亘って形成される導体パターンであり、柱状導体（第１大径柱状導体または第２大径柱状導体）第１端に接続される。本実施形態では、第１大径導体パターンＢｐ１１が、ＲＦＩＣと第１大径柱状導体３１の第１端とを接続する。第１大径導体パターンＢｐ１２は、第１大径柱状導体３２の第１端と第２大径柱状導体４１の第１端とを接続する。第１大径導体パターンＢｐ１３は、第１大径柱状導体３３の第１端と第２大径柱状導体４２の第１端とを接続する。第１大径導体パターンＢｐ１４は、第１大径柱状導体３４の第１端と第２大径柱状導体４３の第１端とを接続する。第１大径導体パターンＢｐ１５は、第２大径柱状導体の第１端と上述した第１小径柱状導体１１の第１端とを接続する。第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５は例えばＡｇペーストの印刷により形成した導体パターンにＣｕ等のめっき膜を被覆したものである。 The first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14, and Bp15 are formed on the first surface VS1 of the resin body 10 and the surface of the first insulating layer 1 as shown in FIGS. 2 (A) and 2 (B). It is a conductor pattern formed over and connected to the columnar conductor (first large diameter columnar conductor or second large diameter columnar conductor) first end. In the present embodiment, the first large-diameter conductor pattern Bp11 connects the RFIC and the first end of the first large-diameter columnar conductor 31. The first large-diameter conductor pattern Bp12 connects the first end of the first large-diameter columnar conductor 32 and the first end of the second large-diameter columnar conductor 41. The first large-diameter conductor pattern Bp13 connects the first end of the first large-diameter columnar conductor 33 and the first end of the second large-diameter columnar conductor 42. The first large-diameter conductor pattern Bp14 connects the first end of the first large-diameter columnar conductor 34 and the first end of the second large-diameter columnar conductor 43. The first large-diameter conductor pattern Bp15 connects the first end of the second large-diameter columnar conductor and the first end of the first small-diameter columnar conductor 11 described above. The first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14, and Bp15 are obtained by coating a conductor pattern formed by printing Ag paste, for example, with a plating film such as Cu.

第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４は、図２（Ａ）および図２（Ｂ）に示すように、樹脂本体１０の第２面ＶＳ２および第２絶縁層２に亘って形成される導体パターンであり、柱状導体（第１大径柱状導体および第２大径柱状導体）の第２端に接続される。本実施形態では、第２大径導体パターンＢｐ２１が、第１大径柱状導体３１の第２端と第２大径柱状導体４１の第２端との間を接続する。第２大径導体パターンＢｐ２２は、第１大径柱状導体３２の第２端と第２大径柱状導体４２の第２端との間を接続する。第２大径導体パターンＢｐ２３は、第１大径柱状導体３３の第２端と第２大径柱状導体４３の第２端との間を接続する。第２大径導体パターンＢｐ２４は、第１大径柱状導体３４の第２端と第２大径柱状導体４４の第２端との間を接続する。第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４は例えばＡｇペーストの印刷により形成した導体パターンにＣｕ等のめっき膜を被覆したものである。 The second large-diameter conductor patterns Bp21, Bp22, Bp23, Bp24 are formed across the second surface VS2 and the second insulating layer 2 of the resin body 10, as shown in FIGS. 2 (A) and 2 (B). The conductor pattern is connected to the second end of the columnar conductor (the first large-diameter columnar conductor and the second large-diameter columnar conductor). In the present embodiment, the second large-diameter conductor pattern Bp21 connects between the second end of the first large-diameter columnar conductor 31 and the second end of the second large-diameter columnar conductor 41. The second large-diameter conductor pattern Bp22 connects the second end of the first large-diameter columnar conductor 32 and the second end of the second large-diameter columnar conductor 42. The second large-diameter conductor pattern Bp23 connects the second end of the first large-diameter columnar conductor 33 and the second end of the second large-diameter columnar conductor 43. The second large diameter conductor pattern Bp24 connects between the second end of the first large diameter columnar conductor 34 and the second end of the second large diameter columnar conductor 44. The second large-diameter conductor patterns Bp21, Bp22, Bp23, and Bp24 are obtained by coating a conductor film formed by printing Ag paste, for example, with a plating film such as Cu.

本実施形態では、これら第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５および第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４が、樹脂本体１０の表面にパターニングされるヘリカル状コイルＨＣ１の「第２部分」に相当する。 In the present embodiment, the first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14, Bp15 and the second large-diameter conductor patterns Bp21, Bp22, Bp23, Bp24 are patterned on the surface of the resin body 10 in the helical coil HC1. This corresponds to the “second part”.

これら小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４の外径寸法は、Ｙ軸方向から視て、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４の外径寸法よりも小さい。また、小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４の内径寸法は、Ｙ軸方向から視て、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４の内径寸法よりも小さい。そして、小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４は、Ｙ軸方向から視て、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４の外径の内側に配置される。なお、本実施形態では、小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４が、Ｙ軸方向から視て、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４の内径の内側に配置されている。 The outer diameter dimensions of these small diameter loops SL1, SL2, SL3, SL4 are smaller than the outer diameter dimensions of the large diameter loops BL1, BL2, BL3, BL4 when viewed from the Y-axis direction. Further, the inner diameter dimensions of the small diameter loops SL1, SL2, SL3, SL4 are smaller than the inner diameter dimensions of the large diameter loops BL1, BL2, BL3, BL4 when viewed from the Y-axis direction. And small diameter loop SL1, SL2, SL3, SL4 is arrange | positioned inside the outer diameter of large diameter loop BL1, BL2, BL3, BL4 seeing from the Y-axis direction. In the present embodiment, the small-diameter loops SL1, SL2, SL3, and SL4 are arranged inside the inner diameters of the large-diameter loops BL1, BL2, BL3, and BL4 when viewed from the Y-axis direction.

複数の大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４は、互いに接続されて約４ターンのヘリカル状の大径コイルＢＣを構成し、複数の小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４は、互いに接続されて約４ターンのヘリカル状の小径コイルＳＣを構成する。大径コイルＢＣの第２端Ｂｅ２が小径コイルＳＣの第１端Ｓｅ１に接続されてヘリカル状コイルＨＣ１を構成する。 The plurality of large-diameter loops BL1, BL2, BL3, BL4 are connected to each other to form a helical large-diameter coil BC of about 4 turns, and the plurality of small-diameter loops SL1, SL2, SL3, SL4 are connected to each other. A helical small-diameter SC having about 4 turns is formed. The second end Be2 of the large diameter coil BC is connected to the first end Se1 of the small diameter coil SC to constitute the helical coil HC1.

図４に示すように、Ｙ軸方向における大径コイルＢＣの第１端Ｂｅ１から第２端Ｂｅ２へ向かう延伸方向（＋Ｙ方向）は、Ｙ軸方向における小径コイルＳＣの第１端Ｓｅ１から第２端Ｓｅ２へ向かう延伸方向（−Ｙ方向）とは逆方向である。また、図４に示すように、Ｙ軸方向における大径ループの形成領域ＢＦＥの少なくとも一部は、Ｙ軸方向における小径ループの形成領域ＳＦＥに重なる。 As shown in FIG. 4, the extending direction (+ Y direction) from the first end Be1 to the second end Be2 of the large-diameter coil BC in the Y-axis direction is the second from the first end Se1 of the small-diameter coil SC in the Y-axis direction. The extending direction (-Y direction) toward the end Se2 is the opposite direction. As shown in FIG. 4, at least a part of the large-diameter loop formation region BFE in the Y-axis direction overlaps the small-diameter loop formation region SFE in the Y-axis direction.

また、図２（Ａ）に示すように、本実施形態では、複数の第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４および複数の第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４が、Ｙ軸方向に対してそれぞれ交互に順次配列される。そして、大径ループおよび小径ループは、Ｚ軸方向から視て（本発明の樹脂本体の「第２面を平面視して」に相当する）、Ｙ軸方向に沿って隙間なく配列されている。 Further, as shown in FIG. 2A, in the present embodiment, a plurality of second large-diameter conductor patterns Bp21, Bp22, Bp23, Bp24 and a plurality of second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24 are represented by Y They are arranged alternately one after another in the axial direction. The large-diameter loop and the small-diameter loop are arranged without gaps along the Y-axis direction when viewed from the Z-axis direction (corresponding to “viewing the second surface of the resin main body of the present invention in plan view”). .

また、図２（Ｂ）に示すように、本実施形態では、複数の第２小径柱状導体２１，２２，２３，２４および複数の第２大径柱状導体４１，４２，４３，４４が、Ｙ軸方向に対してそれぞれ交互に配列される。また、図示は省略するが、複数の第１小径柱状導体１１，１２，１３，１４および複数の第１大径柱状導体３１，３２，３３，３４が、Ｙ軸方向に対してそれぞれ交互に配列される。そして、大径ループおよび小径ループは、Ｘ軸方向（本発明のおける「第１面に平行な方向、且つ巻回軸方向に直交する方向」に相当する）から視て、Ｙ軸方向に沿って隙間なく配列されている。 Further, as shown in FIG. 2B, in the present embodiment, the plurality of second small diameter columnar conductors 21, 22, 23, 24 and the plurality of second large diameter columnar conductors 41, 42, 43, 44 are Y They are alternately arranged with respect to the axial direction. Although not shown, the plurality of first small-diameter columnar conductors 11, 12, 13, 14 and the plurality of first large-diameter columnar conductors 31, 32, 33, 34 are alternately arranged in the Y-axis direction. Is done. The large-diameter loop and the small-diameter loop are along the Y-axis direction when viewed from the X-axis direction (corresponding to the “direction parallel to the first surface and the direction perpendicular to the winding axis direction” in the present invention). Are arranged without gaps.

配線板３は、第１主面ＰＳ１および第１主面ＰＳ１に対向する第２主面ＰＳ２を有する、平面形状が矩形状の平板である。配線板３は、実装用電極８１，８２および層間接続導体Ｖ１，Ｖ２等を有する。実装用電極８１，８２はＲＦＩＣ４を実装するための電極であり、配線板３の第２主面ＰＳ２に形成されている。配線板３は例えばエポキシ樹脂等の熱硬化性のプリント配線板であり、代表的には両面スルーホール基板である。但し、配線板３はこれに限定されるものではなく、ポリイミド樹脂等の熱可塑性樹脂を基材とするプリント配線板やセラミック基板であってもよい。また、配線板３は単層基板でもよく、多層基板でもよい。 The wiring board 3 is a flat plate having a first main surface PS1 and a second main surface PS2 facing the first main surface PS1 and having a rectangular planar shape. The wiring board 3 includes mounting electrodes 81 and 82, interlayer connection conductors V1 and V2, and the like. The mounting electrodes 81 and 82 are electrodes for mounting the RFIC 4, and are formed on the second main surface PS2 of the wiring board 3. The wiring board 3 is a thermosetting printed wiring board such as an epoxy resin, and is typically a double-sided through-hole board. However, the wiring board 3 is not limited to this, and may be a printed wiring board or a ceramic substrate whose base material is a thermoplastic resin such as polyimide resin. The wiring board 3 may be a single layer substrate or a multilayer substrate.

配線板３は、第２主面ＰＳ２が樹脂本体１０の内側に埋設され、第１主面ＰＳ１が樹脂本体１０から露出するように配置される。本実施形態では、配線板３の第１主面ＰＳ１と樹脂本体１０の第１面ＶＳ１とが同一面になるように、配線板３が樹脂本体１０に埋設されている。また、本実施形態では、配線板３の第１主面ＰＳ１および第２主面ＰＳ２がＸ軸方向およびＹ軸方向に平行となるように配置される。すなわち、第１主面ＰＳ１および第２主面ＰＳ２は、ヘリカル状コイルＨＣ１の巻回軸に平行となるように配置される。配線板３は、Ｙ軸方向から視て、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４および小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４の内側に配置される。 Wiring board 3 is arranged such that second main surface PS2 is embedded inside resin main body 10 and first main surface PS1 is exposed from resin main body 10. In the present embodiment, the wiring board 3 is embedded in the resin main body 10 such that the first main surface PS1 of the wiring board 3 and the first surface VS1 of the resin main body 10 are on the same plane. In the present embodiment, the first main surface PS1 and the second main surface PS2 of the wiring board 3 are disposed so as to be parallel to the X-axis direction and the Y-axis direction. That is, the first main surface PS1 and the second main surface PS2 are arranged so as to be parallel to the winding axis of the helical coil HC1. The wiring board 3 is disposed inside the large-diameter loops BL1, BL2, BL3, BL4 and the small-diameter loops SL1, SL2, SL3, SL4 as viewed from the Y-axis direction.

ＲＦＩＣ４は、図１および図２（Ａ）に示すように、配線板３の第２主面ＰＳ２に実装され、樹脂本体１０に埋設される。ＲＦＩＣ４のアンテナポートは、配線板３の第２主面ＰＳ２に形成される実装用電極８１，８２にそれぞれ接続される。これら実装用電極８１，８２は、層間接続導体Ｖ１，Ｖ２を介して、図４に示すヘリカル状コイルＨＣ１の第１端Ｅ１および第２端Ｅ２にそれぞれ接続される。すなわち、ＲＦＩＣ４は、ヘリカル状コイルＨＣ１の第１端および第２端にそれぞれ接続される。ＲＦＩＣ４は例えばパッケージングされたＲＦＩＣである。なお、ＲＦＩＣ４は、ベアチップ状のＲＦＩＣチップであってもよい。ＲＦＩＣチップと実装用電極８１，８２（ランドパターン）とがワイヤーで接続されていてもよい。 1 and 2A, the RFIC 4 is mounted on the second main surface PS2 of the wiring board 3 and embedded in the resin body 10. The antenna port of the RFIC 4 is connected to mounting electrodes 81 and 82 formed on the second main surface PS2 of the wiring board 3, respectively. The mounting electrodes 81 and 82 are connected to the first end E1 and the second end E2 of the helical coil HC1 shown in FIG. 4 via the interlayer connection conductors V1 and V2, respectively. That is, the RFIC 4 is connected to the first end and the second end of the helical coil HC1, respectively. The RFIC 4 is, for example, a packaged RFIC. The RFIC 4 may be a bare chip RFIC chip. The RFIC chip and the mounting electrodes 81 and 82 (land pattern) may be connected by a wire.

保護層６１，６２は、樹脂本体１０の第１面ＶＳ１および第２面ＶＳ２に形成され、導体パターン（第１大径導体パターン、第２大径導体パターン、第１小径導体パターン、第２小径導体パターン）の形成面を被覆する。保護層６１，６２は、導体パターンの酸化防止、耐熱性の向上、金属異物による導体間のショートの防止を目的として設けられる樹脂膜であり、例えばソルダーレジスト膜等である。なお、保護層６１，６２は必須ではない。 The protective layers 61 and 62 are formed on the first surface VS 1 and the second surface VS 2 of the resin main body 10, and are provided with conductor patterns (first large-diameter conductor pattern, second large-diameter conductor pattern, first small-diameter conductor pattern, second small-diameter). The formation surface of the conductor pattern is covered. The protective layers 61 and 62 are resin films provided for the purpose of preventing oxidation of the conductor pattern, improving heat resistance, and preventing short-circuiting between conductors due to metal foreign matter, and are, for example, solder resist films. The protective layers 61 and 62 are not essential.

図６は無線ＩＣデバイス１０１の回路図である。 FIG. 6 is a circuit diagram of the wireless IC device 101.

無線ＩＣデバイス１０１は、ＨＦ帯ＲＦＩＤシステム用の例えばＨＦ帯のＲＦＩＣを備える。ＲＦＩＣ４に上記ヘリカル状コイルＨＣ１が接続され、上記ヘリカル状コイルＨＣ１とＲＦＩＣ４が有する容量成分とでＬＣ共振回路が構成される。その共振周波数はＲＦＩＤシステムの通信周波数に実質的に等しい。通信周波数帯域は例えば１３．５６ＭＨｚ帯である。 The wireless IC device 101 includes, for example, an HF band RFIC for an HF band RFID system. The helical coil HC1 is connected to the RFIC 4, and an LC resonance circuit is configured by the helical coil HC1 and the capacitive component of the RFIC 4. Its resonant frequency is substantially equal to the communication frequency of the RFID system. The communication frequency band is, for example, the 13.56 MHz band.

なお、「無線ＩＣデバイス」は、ヘリカル状コイルＨＣ１とＲＦＩＣチップとで構成されていてもよいし、ヘリカル状コイルＨＣ１と、整合回路等を設けた基板にＲＦＩＣチップを搭載し、一体化したモジュールとで構成されていてもよい。また、「ＲＦＩＤタグ」は、ＲＦＩＣとＲＦＩＣに接続されたヘリカル状コイルとを有したものであって、電波（電磁波）または磁界を用いて、内蔵したメモリのデータを非接触で読み書きする情報媒体と定義する。つまり、本実施形態の無線ＩＣデバイスはＲＦＩＤタグとして構成される。 The “wireless IC device” may be composed of a helical coil HC1 and an RFIC chip, or an integrated module in which an RFIC chip is mounted on a substrate provided with a helical coil HC1 and a matching circuit. And may be configured. An “RFID tag” includes an RFIC and a helical coil connected to the RFIC, and is an information medium that reads and writes data in a built-in memory in a non-contact manner using radio waves (electromagnetic waves) or magnetic fields. It is defined as That is, the wireless IC device of this embodiment is configured as an RFID tag.

次に、第１大径導体パターン、第２大径導体パターン、第１小径導体パターンおよび第２小径導体パターンの構造について、図を参照して説明する。図７（Ａ）は図２（Ａ）におけるＤＰ１部の拡大図であり、図７（Ｂ）は図７（Ａ）におけるＡ−Ａ断面詳細図である。また、図７（Ａ）および図７（Ｂ）では、構造を分かりやすくするため、保護層６２の図示を省略している。 Next, the structure of the first large-diameter conductor pattern, the second large-diameter conductor pattern, the first small-diameter conductor pattern, and the second small-diameter conductor pattern will be described with reference to the drawings. FIG. 7A is an enlarged view of the DP1 portion in FIG. 2A, and FIG. 7B is a detailed cross-sectional view along the line AA in FIG. 7A. 7A and 7B, the protective layer 62 is not shown for easy understanding of the structure.

大径導体パターンおよび小径導体パターンは、樹脂本体１０の表面に形成される下地電極層と、下地電極層に積層されるめっき電極層とを備える。例えば、図７（Ａ）に示す第２大径導体パターンＢｐ２１を例として説明すると、第２大径導体パターンＢｐ２１は、下地電極層ＢＡ１とめっき電極層ＢＣ１とを備え、下地電極層ＢＡ１は端部の線幅が、第２大径柱状導体４１の上端面の直径より小さい。すなわち、下地電極層ＢＡ１の端部は、第２大径柱状導体４１の上端面の一部を被覆するように形成される。そして、めっき電極層ＢＣ１は、下地電極層ＢＡ１に被覆されていない第２大径柱状導体４１の上端面と下地電極層ＢＡ１とを被覆するように形成される。下地電極層は例えばＡｇ等の導電性ペーストをスクリーン印刷することにより形成する。めっき電極層は例えばＣｕ等のめっきによって、下地電極層や柱状導体の上端面を被覆するめっき膜である。 The large-diameter conductor pattern and the small-diameter conductor pattern include a base electrode layer formed on the surface of the resin body 10 and a plating electrode layer laminated on the base electrode layer. For example, the second large-diameter conductor pattern Bp21 shown in FIG. 7A will be described as an example. The second large-diameter conductor pattern Bp21 includes a base electrode layer BA1 and a plating electrode layer BC1, and the base electrode layer BA1 is an end. The line width of the portion is smaller than the diameter of the upper end surface of the second large-diameter columnar conductor 41. That is, the end portion of the base electrode layer BA1 is formed so as to cover a part of the upper end surface of the second large-diameter columnar conductor 41. The plating electrode layer BC1 is formed so as to cover the upper end surface of the second large-diameter columnar conductor 41 that is not covered with the base electrode layer BA1 and the base electrode layer BA1. The base electrode layer is formed by screen printing a conductive paste such as Ag. A plating electrode layer is a plating film which coat | covers the base electrode layer and the upper end surface of a columnar conductor, for example by plating, such as Cu.

このように、大径導体パターンおよび小径導体パターンは、全てＣｕめっき膜を形成することにより、膜厚を厚くできる。そのため、ヘリカル状コイルのＤＣＲをさらに低減できる。 In this way, the large-diameter conductor pattern and the small-diameter conductor pattern can all be made thicker by forming the Cu plating film. Therefore, the DCR of the helical coil can be further reduced.

また、本実施形態では、柱状導体がＣｕ製ピンであり、Ｃｕめっき膜であるめっき電極層が下地電極層だけでなく、下地電極層に被覆されていない柱状導体の上端面を被覆するように形成される。そのため、この構成により、Ａｇの導体パターンである下地電極層をＣｕ製ピンである柱状導体の上端面全体に被覆した場合に比べて、大径導体パターンおよび小径導体パターンと柱状導体との接合強度を高くできる。 Further, in this embodiment, the columnar conductor is a Cu pin, and the plated electrode layer, which is a Cu plating film, covers not only the base electrode layer but also the upper end surface of the columnar conductor not covered by the base electrode layer. It is formed. Therefore, with this configuration, the bonding strength of the large-diameter conductor pattern and the small-diameter conductor pattern and the columnar conductor is greater than when the base electrode layer, which is an Ag conductor pattern, is coated on the entire upper end surface of the columnar conductor that is a Cu pin. Can be high.

本実施形態に係る無線ＩＣデバイス１０１によれば、次のような効果を奏する。 The wireless IC device 101 according to the present embodiment has the following effects.

（ａ）本実施形態では、少なくとも小径導体パターン（第１小径導体パターン、第２小径導体パターン）と大径導体パターン（第１大径導体パターン、第２大径導体パターン）とが重なる部分に、絶縁層（第１絶縁層、第２絶縁層）が挟まれる。この構成では、小径導体パターンと大径導体パターンとが同一平面上に形成されておらず、小径導体パターンと大径導体パターンとが重なる部分に絶縁層が介在するため、小径導体パターンと大径導体パターンとが接触（線間ショート）する可能性は低い。したがって、ジャンパーチップ等の接続部材を別途設けることなく、大径導体パターンと小径導体パターンとの絶縁が確保される。そのため、大径ループおよび小径ループを、Ｙ軸方向に狭いピッチで配列することができ、所期のターン数・所期のインダクタンス値を有するヘリカル状コイルを得やすくなる。また、この構成では、Ｚ軸方向から視て、小径導体パターンと大径導体パターンとが一部重なるため、小径導体パターンおよび大径導体パターンの線幅を容易に太くでき、ヘリカル状コイルＨＣ１のＤＣＲをさらに低減できる。 (A) In the present embodiment, at least a portion where the small diameter conductor pattern (first small diameter conductor pattern, second small diameter conductor pattern) and the large diameter conductor pattern (first large diameter conductor pattern, second large diameter conductor pattern) overlap. Insulating layers (first insulating layer, second insulating layer) are sandwiched. In this configuration, the small-diameter conductor pattern and the large-diameter conductor pattern are not formed on the same plane, and an insulating layer is interposed between the small-diameter conductor pattern and the large-diameter conductor pattern. The possibility of contact with the conductor pattern (short circuit between lines) is low. Therefore, insulation between the large-diameter conductor pattern and the small-diameter conductor pattern is ensured without separately providing a connection member such as a jumper chip. Therefore, the large-diameter loop and the small-diameter loop can be arranged at a narrow pitch in the Y-axis direction, and it becomes easy to obtain a helical coil having a desired number of turns and a desired inductance value. Further, in this configuration, the small-diameter conductor pattern and the large-diameter conductor pattern partially overlap each other when viewed from the Z-axis direction, so that the line width of the small-diameter conductor pattern and the large-diameter conductor pattern can be easily increased, and the helical coil HC1 DCR can be further reduced.

（ｂ）また、本実施形態では、ヘリカル状コイルＨＣ１を構成する大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４および小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４の少なくとも一部が、柱状導体で構成されている。そのため、導電性ペーストの焼成による焼結金属体や、導電性薄膜のエッチングによる薄膜金属体等で構成する場合に比べて大径ループおよび小径ループのＤＣＲを小さくできるので、Ｑ値が高く、低損失のヘリカル状コイルが得られる。また、ヘリカル状コイル全体の低抵抗化が可能となるため、高感度の無線ＩＣデバイス、または高感度の割に小型の無線ＩＣデバイスが得られる。 (B) In the present embodiment, at least a part of the large-diameter loops BL1, BL2, BL3, and BL4 and the small-diameter loops SL1, SL2, SL3, and SL4 constituting the helical coil HC1 are formed of columnar conductors. . Therefore, the DCR of the large-diameter loop and the small-diameter loop can be reduced as compared with the case where the sintered metal body is formed by firing the conductive paste, or the thin-film metal body is formed by etching the conductive thin film. A lossy helical coil is obtained. Further, since the resistance of the entire helical coil can be reduced, a highly sensitive wireless IC device or a small wireless IC device for high sensitivity can be obtained.

（ｃ）また、本実施形態では、図２（Ａ）および図２（Ｃ）等に示すように、第１小径柱状導体と第１大径柱状導体、および第２小径柱状導体と第２大径柱状導体とが、それぞれＹ軸方向に配列され、且つ、Ｚ軸方向から視て千鳥状に配置されている。また、本実施形態では、上述したように、ジャンパーチップ等の接続部材を別途設けることなく、隣接する大径導体パターンと小径導体パターンとの絶縁が確保される。そのため、大径ループと小径ループをＹ軸方向に狭いピッチで配列することができる。 (C) In this embodiment, as shown in FIGS. 2A and 2C, the first small-diameter columnar conductor and the first large-diameter columnar conductor, and the second small-diameter columnar conductor and the second large The radial columnar conductors are arranged in the Y-axis direction and arranged in a staggered manner as viewed from the Z-axis direction. In the present embodiment, as described above, insulation between adjacent large-diameter conductor patterns and small-diameter conductor patterns is ensured without separately providing a connection member such as a jumper chip. Therefore, the large diameter loop and the small diameter loop can be arranged at a narrow pitch in the Y-axis direction.

（ｄ）本実施形態では、大径ループの一部および小径ループの一部に柱状導体を利用する構造であるため、多層基板にコイルを形成する必要がなく、複雑な配線を引き回す必要もない。そのため、コイル開口サイズの設計上の自由度に優れたコイル構造を容易に実現できる。さらに、比較的大きな高さ寸法を持った部分を柱状導体によって形成できるので、たとえば層間導体を有する複数の基材層を積層して高さ方向の接続部を形成する場合に比べて、接続箇所を減らすことができ、ヘリカル状コイルの電気的信頼性が高まる。 (D) In the present embodiment, since the columnar conductor is used for a part of the large-diameter loop and a part of the small-diameter loop, it is not necessary to form a coil on the multilayer substrate and it is not necessary to route complicated wiring. . Therefore, it is possible to easily realize a coil structure excellent in design freedom of the coil opening size. Furthermore, since a portion having a relatively large height dimension can be formed by a columnar conductor, for example, compared with a case where a plurality of base material layers having interlayer conductors are stacked to form a connection portion in the height direction. And the electrical reliability of the helical coil is increased.

（ｅ）本実施形態では、大径ループの一部および小径ループの一部に利用される大径導体パターン（第１大径導体パターンおよび第２大径導体パターン）および小径導体パターン（第１小径導体パターンおよび第２小径導体パターン）が、ワイヤ等ではなく、ともに樹脂本体１０の表面等に形成される導体パターンである。そのため、隣接する大径導体パターン同士、または隣接する小径導体パターン同士の接触（線間ショート）の可能性は低いため、Ｙ軸方向に配列される大径導体パターン同士の間隙を容易に小さくでき、Ｙ軸方向に配列される小径導体パターン同士の間隙を容易に小さくできる。また、大径導体パターン同士の間隙や小径導体パターン同士の間隙を選定することにより、占有面積（Ｙ軸方向の寸法）が同じであっても、所期のターン数・所期のインダクタンス値を有するヘリカル状コイルを得やすくなる。 (E) In the present embodiment, a large-diameter conductor pattern (first large-diameter conductor pattern and second large-diameter conductor pattern) and a small-diameter conductor pattern (first) used for a part of the large-diameter loop and a part of the small-diameter loop. The small-diameter conductor pattern and the second small-diameter conductor pattern) are conductor patterns formed on the surface of the resin body 10 and the like, not wires or the like. Therefore, the possibility of contact (short between lines) between adjacent large-diameter conductor patterns or between adjacent small-diameter conductor patterns is low, so the gap between large-diameter conductor patterns arranged in the Y-axis direction can be easily reduced. The gap between the small-diameter conductor patterns arranged in the Y-axis direction can be easily reduced. Also, by selecting the gap between the large-diameter conductor patterns and the gap between the small-diameter conductor patterns, the desired number of turns and the desired inductance value can be obtained even if the occupation area (dimension in the Y-axis direction) is the same. It becomes easy to obtain the helical coil which has.

（ｆ）本実施形態では、ＲＦＩＣ４が実装された配線板３の第２主面ＰＳ２が、Ｙ軸方向（ヘリカル状コイルＨＣ１の巻回軸ＡＸ）に平行であるため、ＲＦＩＣ４の実装用電極８１，８２（ランドパターン）等がヘリカル状コイルＨＣ１の磁界の形成を妨げにくい。また、ヘリカル状コイルＨＣ１の磁界によるＲＦＩＣ４への悪影響（誤動作や不安定動作等）は小さい。さらに、ＲＦＩＣ４のデジタル回路部から発生するノイズによるヘリカル状コイルへの悪影響（受信感度の低下・送信信号の受信回路への回り込み等）は小さい。 (F) In the present embodiment, since the second main surface PS2 of the wiring board 3 on which the RFIC 4 is mounted is parallel to the Y-axis direction (the winding axis AX of the helical coil HC1), the mounting electrode 81 of the RFIC 4 , 82 (land pattern) or the like hardly interferes with the formation of the magnetic field of the helical coil HC1. Further, the adverse effect (malfunction, unstable operation, etc.) on the RFIC 4 due to the magnetic field of the helical coil HC1 is small. Furthermore, the adverse effect on the helical coil due to noise generated from the digital circuit section of the RFIC 4 (decrease in reception sensitivity, wraparound of the transmission signal to the reception circuit, etc.) is small.

（ｇ）無線ＩＣデバイス１０１は、ＲＦＩＣ４がヘリカル状コイルの内側に配置されている。そのため、ＲＦＩＣ４の保護機能が高い。また、ＲＦＩＣ４が無線ＩＣデバイス１０１の外方へ露出しないため、ＲＦＩＣ４をヘリカル状コイルの外部に搭載することによる大型化が避けられる。 (G) In the wireless IC device 101, the RFIC 4 is arranged inside the helical coil. Therefore, the protection function of the RFIC 4 is high. Further, since the RFIC 4 is not exposed to the outside of the wireless IC device 101, an increase in size due to mounting the RFIC 4 outside the helical coil can be avoided.

（ｈ）無線ＩＣデバイス１０１は、ＲＦＩＣ４等の表面実装部品、大径ループの一部（第１大径柱状導体、第２大径柱状導体）および小径ループの一部（第１小径柱状導体、第２小径柱状導体）が樹脂本体１０で保護されるため、無線ＩＣデバイス全体が堅牢である。特に、この無線ＩＣデバイスを樹脂成型物品に埋設する際、射出成型時に流動する高温の樹脂（例えば３００℃以上の高温樹脂）に対して上記表面実装チップ部品のはんだ接続部が保護される。つまり、ＲＦＩＣ４は、ヘリカル状コイルＨＣ１を構成する大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４、小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４、第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５、第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４、第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４および第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４等によって囲まれたエリアに配置され、且つ、樹脂本体１０および配線板３によって囲まれている。この構成により、ＲＦＩＣ４と実装用電極８１，８２との間の接続部やＲＦＩＣ４に、大きな熱的負荷が加わり難くなる。そのため、無線ＩＣデバイス１０１を樹脂成型物品（玩具や容器等）に埋め込んだ場合でも、ＲＦＩＣ４の動作信頼性を確保でき、ＲＦＩＣ４と実装用電極との間の接続部の信頼性を高めることができる。すなわち、樹脂成型体に内蔵可能な、つまり、射出成型時の高温下にも耐えられる、高耐熱性の無線ＩＣデバイスを実現できる。また、はんだ接合部は高温化で一旦溶融する場合でも、樹脂本体１０と配線板３は樹脂同士の接合により接着しており、表面実装部品や小径ループが外れたり変形したりしないので、冷却後、はんだ接合部の接合状態は正常に戻る。また、そのため、ヘリカル状コイルのインダクタンス値を維持できる。 (H) The wireless IC device 101 includes a surface-mounted component such as the RFIC 4, a part of the large-diameter loop (first large-diameter columnar conductor, second large-diameter columnar conductor), and a part of the small-diameter loop (first small-diameter columnar conductor, Since the second small-diameter columnar conductor) is protected by the resin body 10, the entire wireless IC device is robust. In particular, when the wireless IC device is embedded in a resin molded article, the solder connection portion of the surface mount chip component is protected against a high temperature resin (for example, a high temperature resin of 300 ° C. or higher) that flows during injection molding. That is, the RFIC 4 includes the large-diameter loops BL1, BL2, BL3, BL4, the small-diameter loops SL1, SL2, SL3, SL4, the first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14, Bp15, Two large-diameter conductor patterns Bp21, Bp22, Bp23, Bp24, the first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14 and the second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24, and the like, and Surrounded by the resin body 10 and the wiring board 3. With this configuration, it is difficult to apply a large thermal load to the connection portion between the RFIC 4 and the mounting electrodes 81 and 82 and the RFIC 4. Therefore, even when the wireless IC device 101 is embedded in a resin molded article (toy, container, etc.), the operational reliability of the RFIC 4 can be ensured, and the reliability of the connecting portion between the RFIC 4 and the mounting electrode can be increased. . That is, a highly heat-resistant wireless IC device that can be built into a resin molded body, that is, can withstand high temperatures during injection molding can be realized. In addition, even if the solder joint is once melted at a high temperature, the resin body 10 and the wiring board 3 are bonded together by joining the resins, and the surface-mounted components and small-diameter loops do not come off or deform, so after cooling The soldered joint will return to normal. Therefore, the inductance value of the helical coil can be maintained.

（ｉ）無線ＩＣデバイス１０１は、大径ループを構成する大径導体パターン（第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５および第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４）が、樹脂本体１０の表面および絶縁層（第１絶縁層１および第２絶縁層２）の表面に亘って形成されている。そのため、ヘリカル状コイルＨＣ１の実質的な開口径は大きい。よって、チップ状の無線ＩＣデバイス１０１のサイズと略同等のサイズを持ったヘリカル状コイル（コイルアンテナ）を構成することができ、小型のチップ状部品であるにも関わらず、大きな通信距離を確保することができ、また、通信相手のアンテナに対して相対的に広い位置関係で通信できる。 (I) The wireless IC device 101 has a large-diameter conductor pattern constituting a large-diameter loop (first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14, Bp15 and second large-diameter conductor patterns Bp21, Bp22, Bp23, Bp24). Is formed over the surface of the resin body 10 and the surfaces of the insulating layers (the first insulating layer 1 and the second insulating layer 2). Therefore, the substantial opening diameter of the helical coil HC1 is large. Therefore, a helical coil (coil antenna) having a size substantially equal to the size of the chip-shaped wireless IC device 101 can be configured, and a large communication distance is ensured despite being a small chip-shaped component. In addition, communication can be performed with a relatively wide positional relationship with respect to the antenna of the communication partner.

（ｊ）本実施形態では、パターニングによって樹脂本体１０の表面に第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４および第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４を形成する。そのため、第１小径柱状導体１１，１２，１３，１４の第１端と第２小径柱状導体２１，２２，２３，２４の第１端との接続、および第１小径柱状導体１１，１２，１３，１４の第２端と第２小径柱状導体２１，２２，２３，２４の第２端との接続が容易になる。 (J) In the present embodiment, the first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14 and the second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24 are formed on the surface of the resin body 10 by patterning. Therefore, the connection between the first ends of the first small-diameter columnar conductors 11, 12, 13, 14 and the first ends of the second small-diameter columnar conductors 21, 22, 23, 24, and the first small-diameter columnar conductors 11, 12, 13 , 14 and the second ends of the second small-diameter columnar conductors 21, 22, 23, 24 are facilitated.

（ｋ）また、本実施形態では、パターニングによって、樹脂本体１０の表面および絶縁層の表面に亘って第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５および第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４を形成する。そのため、第１大径柱状導体３１，３２，３３，３４の第１端と第２大径柱状導体４１，４２，４３，４４の第１端との接続、および第１大径柱状導体３１，３２，３３，３４の第２端と第２大径柱状導体４１，４２，４３，４４の第２端との接続が容易になる。 (K) In the present embodiment, the first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14, Bp15, and the second large-diameter conductor pattern Bp21, over the surface of the resin main body 10 and the surface of the insulating layer, are patterned. Bp22, Bp23, and Bp24 are formed. Therefore, the connection between the first end of the first large-diameter columnar conductors 31, 32, 33, 34 and the first end of the second large-diameter columnar conductors 41, 42, 43, 44, and the first large-diameter columnar conductor 31, The connection between the second ends of 32, 33, and 34 and the second ends of the second large-diameter columnar conductors 41, 42, 43, and 44 is facilitated.

（ｌ）大径ループおよび小径ループを構成するパターンのうち、Ｘ軸方向に延伸する第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５、第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４、第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４および第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４は、全てＣｕ等のめっき膜を形成することにより、膜厚を厚くできる。そのため、ヘリカル状コイルのＤＣＲをさらに低減できる。 (L) Of the patterns constituting the large-diameter loop and the small-diameter loop, the first large-diameter conductor pattern Bp11, Bp12, Bp13, Bp14, Bp15, the second large-diameter conductor pattern Bp21, Bp22, Bp23, extending in the X-axis direction, Bp24, the first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14 and the second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24 can all be made thick by forming a plating film of Cu or the like. Therefore, the DCR of the helical coil can be further reduced.

（ｍ）本実施形態に係るヘリカル状コイルＨＣ１は、Ｙ軸方向における大径コイルＢＣの第１端Ｂｅ１から第２端Ｂｅ２へ向かう延伸方向（＋Ｙ方向）は、Ｙ軸方向における小径コイルＳＣの第１端Ｓｅ１から第２端Ｓｅ２へ向かう延伸方向（−Ｙ方向）とは逆方向である。また、Ｙ軸方向における大径ループの形成領域ＢＦＥの少なくとも一部は、Ｙ軸方向における小径ループの形成領域ＳＦＥに重なる。この構成により、小型の割にターン数の多いヘリカル状コイルを容易に構成できる。また、ターン数の割に占有面積（特にＹ軸方向の寸法）が小さなヘリカル状コイルを実現できる。また、この構成により、インダクタンスに寄与しない導体を短くできるため、ヘリカル状コイルのＤＣＲをさらに低減できる。 (M) In the helical coil HC1 according to the present embodiment, the extending direction (+ Y direction) from the first end Be1 to the second end Be2 of the large-diameter coil BC in the Y-axis direction is the same as that of the small-diameter coil SC in the Y-axis direction. The extending direction (-Y direction) from the first end Se1 to the second end Se2 is the opposite direction. Further, at least a part of the large-diameter loop formation region BFE in the Y-axis direction overlaps the small-diameter loop formation region SFE in the Y-axis direction. With this configuration, a helical coil having a large number of turns for a small size can be easily configured. In addition, a helical coil having a small occupied area (particularly the dimension in the Y-axis direction) relative to the number of turns can be realized. Also, with this configuration, the conductor that does not contribute to inductance can be shortened, so that the DCR of the helical coil can be further reduced.

（ｎ）無線ＩＣデバイス１０１は、配線板３の第１主面ＰＳ１と樹脂本体１０の第１面ＶＳ１とが同一面になるように配線板３を樹脂本体１０に埋設した構造である。この構成により、第１面ＶＳ１および第１主面ＰＳ１に亘って形成される第１小径導体パターンや第１大径導体パターン等がパターニングにより容易に形成できるため、ヘリカル状コイルＨＣ１の第１端および第２端とＲＦＩＣ４との接続が容易となる。 (N) The wireless IC device 101 has a structure in which the wiring board 3 is embedded in the resin main body 10 so that the first main surface PS1 of the wiring board 3 and the first surface VS1 of the resin main body 10 are on the same plane. With this configuration, since the first small-diameter conductor pattern, the first large-diameter conductor pattern, and the like formed over the first surface VS1 and the first main surface PS1 can be easily formed by patterning, the first end of the helical coil HC1 And the connection between the second end and the RFIC 4 is facilitated.

（ｏ）本実施形態では、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４および小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４が、Ｚ軸方向から視て、Ｙ軸方向に沿って隙間なく配列されている。この構成により、ヘリカル状コイルに発生した磁束が、互いに隣接する大径ループと小径ループとの間隙から漏れ難い。そのため、高いインダクタンス値を有するヘリカル状コイルを構成できる。また、ヘリカル状コイルをコイルアンテナとして利用した場合には、通信相手側のコイルアンテナに対して相対的に広い位置関係で磁界結合できる。なお、互いに隣接する大径ループと小径ループとの間隙から磁束がより漏れ難くするため、Ｚ軸方向から視て、大径ループのＹ軸方向における縁端部と小径ループのＹ軸方向における縁端部とが、一部重なることが好ましい（図２（Ａ）を参照）。 (O) In the present embodiment, the large-diameter loops BL1, BL2, BL3, and BL4 and the small-diameter loops SL1, SL2, SL3, and SL4 are arranged without gaps along the Y-axis direction when viewed from the Z-axis direction. With this configuration, the magnetic flux generated in the helical coil is difficult to leak from the gap between the large-diameter loop and the small-diameter loop that are adjacent to each other. Therefore, a helical coil having a high inductance value can be configured. Further, when a helical coil is used as a coil antenna, magnetic field coupling can be performed with a relatively wide positional relationship with respect to the coil antenna on the communication partner side. In order to make it more difficult for magnetic flux to leak from the gap between the large-diameter loop and the small-diameter loop that are adjacent to each other, the edge in the Y-axis direction of the large-diameter loop and the edge in the Y-axis direction of the small-diameter loop are viewed from the Z-axis direction. The end portion preferably overlaps partly (see FIG. 2A).

（ｐ）また、本実施形態では、大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４および小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４が、Ｘ軸方向から視て、Ｙ軸方向に沿って隙間なく配列されている。上述した通り、この構成により、高いインダクタンス値を有するヘリカル状コイルを構成できる。また、ヘリカル状コイルをコイルアンテナとして利用した場合には、通信相手側のコイルアンテナに対して相対的に広い位置関係で磁界結合できる。なお、互いに隣接する大径ループと小径ループとの間隙から磁束がより漏れ難くするため、Ｘ軸方向から視て、大径ループのＹ軸方向における縁端部と小径ループのＹ軸方向における縁端部とが、一部重なることが好ましい（図２（Ｂ）を参照）。 (P) In this embodiment, the large-diameter loops BL1, BL2, BL3, and BL4 and the small-diameter loops SL1, SL2, SL3, and SL4 are arranged without gaps along the Y-axis direction when viewed from the X-axis direction. Yes. As described above, this configuration makes it possible to configure a helical coil having a high inductance value. Further, when a helical coil is used as a coil antenna, magnetic field coupling can be performed with a relatively wide positional relationship with respect to the coil antenna on the communication partner side. In order to make it more difficult for the magnetic flux to leak from the gap between the large-diameter loop and the small-diameter loop that are adjacent to each other, the edge in the Y-axis direction of the large-diameter loop and the edge in the Y-axis direction of the small-diameter loop are viewed from the X-axis direction. The end portion preferably overlaps partly (see FIG. 2B).

また、本実施形態では、約４ターンの大径コイルＢＣと約４ターンの小径コイルＳＣとを備えるヘリカル状コイルＨＣ１を示したが、これに限定されるものではない。大径コイルＢＣのターン数および小径コイルのターン数は、１よりも大きければ適宜変更可能である。また、本実施形態では、１つの大径コイルＢＣと１つの小径コイルＳＣとを接続した構成を示したが、これに限定されるものではない。複数の大径コイルおよび複数の小径コイルが、交互に順次接続される構成であってもよい。また、大径コイルの数と小径コイルの数が同数である必要はない。複数の大径コイルのターン数がそれぞれ異なっていてもよく、複数の小径コイルのターン数がそれぞれ異なっていてもよい。 In the present embodiment, the helical coil HC1 including the large-diameter coil BC of about 4 turns and the small-diameter coil SC of about 4 turns is shown, but the present invention is not limited to this. The number of turns of the large-diameter coil BC and the number of turns of the small-diameter coil can be appropriately changed as long as they are larger than one. In the present embodiment, the configuration in which one large-diameter coil BC and one small-diameter coil SC are connected is shown, but the present invention is not limited to this. A plurality of large-diameter coils and a plurality of small-diameter coils may be alternately and sequentially connected. Moreover, the number of large diameter coils and the number of small diameter coils do not need to be the same number. The plurality of large-diameter coils may have different numbers of turns, and the plurality of small-diameter coils may have different numbers of turns.

本実施形態に係る無線ＩＣデバイス１０１は、例えば次の工程で製造される。図８および図９は無線ＩＣデバイス１０１の製造工程を順に示す断面図である。 The wireless IC device 101 according to the present embodiment is manufactured by, for example, the following process. 8 and 9 are cross-sectional views sequentially showing the manufacturing process of the wireless IC device 101. FIG.

まず、図８中の（１）に示すように、ＲＦＩＣ４を実装した配線板３を準備する。具体的には、第１主面ＰＳ１および第１主面ＰＳ１に対向する第２主面ＰＳ２を有する配線板３の第２主面ＰＳ２に、ＲＦＩＣ４を実装するための実装用電極８１，８２（ランドパターン）等を形成する。さらに、配線板３の厚み方向には、配線板３の内部に形成され、実装用電極８１，８２に接続される層間接続導体Ｖ１，Ｖ２を形成する。 First, as shown in (1) in FIG. 8, the wiring board 3 on which the RFIC 4 is mounted is prepared. Specifically, mounting electrodes 81 and 82 (for mounting the RFIC 4 on the second main surface PS2 of the wiring board 3 having the first main surface PS1 and the second main surface PS2 opposed to the first main surface PS1. Land pattern) or the like. Further, in the thickness direction of the wiring board 3, interlayer connection conductors V 1 and V 2 formed inside the wiring board 3 and connected to the mounting electrodes 81 and 82 are formed.

その後、ＲＦＩＣ４を実装するための実装用電極８１，８２等に、はんだペースト等の導電性接合材５を形成する。このとき、配線板３の第１主面ＰＳ１側に導体パターンは形成されていない。 Thereafter, the conductive bonding material 5 such as a solder paste is formed on the mounting electrodes 81 and 82 for mounting the RFIC 4. At this time, the conductor pattern is not formed on the first main surface PS1 side of the wiring board 3.

配線板３は、例えばガラスエポキシ基板やエポキシ樹脂等の熱硬化性樹脂を基材とするプリント配線板であるが、ポリイミド樹脂等の熱可塑性樹脂を基材とする基板やセラミック基板に厚膜パターンを形成したものであってもよい。また、配線板３は、単層基板でも多層基板でもよい。実装用電極８１，８２は例えばＣｕやＡｇ等の比抵抗の小さな金属箔をパターンニングしたものであるが、配線板３の第２主面ＰＳ２にめっき膜をパターニングしたものや、導体ペーストをパターニングしたものであってもよい。例えば、実装用電極８１，８２の断面寸法は、１８μｍ×１００μｍである。これらのパターンニングを行った後に、Ｃｕ等のめっきを施してトータル膜厚を４０〜５０μｍに厚くすることが好ましい。層間接続導体Ｖ１，Ｖ２は、例えば配線板３を貫通する貫通孔の内壁にめっき膜を付与したスルーホールである。 The wiring board 3 is a printed wiring board based on a thermosetting resin such as a glass epoxy board or an epoxy resin, for example, but a thick film pattern is formed on a board or ceramic board based on a thermoplastic resin such as a polyimide resin. May be formed. The wiring board 3 may be a single layer substrate or a multilayer substrate. The mounting electrodes 81 and 82 are formed by patterning a metal foil having a small specific resistance, such as Cu or Ag. The mounting electrodes 81 and 82 are formed by patterning a plating film on the second main surface PS2 of the wiring board 3, or patterning a conductor paste. It may be what you did. For example, the mounting electrodes 81 and 82 have a cross-sectional dimension of 18 μm × 100 μm. After performing these patterning, it is preferable to perform plating of Cu or the like to increase the total film thickness to 40 to 50 μm. The interlayer connection conductors V1 and V2 are through holes in which a plating film is provided on the inner wall of a through hole that penetrates the wiring board 3, for example.

その後、配線板３の第２主面ＰＳ２に、ＲＦＩＣ４をはんだ等の導電性接合材５を介して実装する。具体的には、配線板３の第２主面ＰＳ２にＲＦＩＣ４等の部品をマウンターで実装した後、これら部品をリフロープロセスではんだ付けする。この工程により、ＲＦＩＣ４を配線板３に電気的に導通させ、且つ構造的に接合する。 Thereafter, the RFIC 4 is mounted on the second main surface PS2 of the wiring board 3 via a conductive bonding material 5 such as solder. Specifically, after mounting components such as RFIC4 on the second main surface PS2 of the wiring board 3 with a mounter, these components are soldered by a reflow process. By this step, the RFIC 4 is electrically connected to the wiring board 3 and is structurally bonded.

ＲＦＩＣ４はＲＦＩＤタグ用のＲＦＩＣをパッケージングしたものである。また、ＲＦＩＣ４は、ベアチップ状のＲＦＩＣチップであってもよい。 RFIC4 is a packaged RFIC for an RFID tag. Further, the RFIC 4 may be a bare chip RFIC chip.

次に、図８中の（２）に示すように、主面に粘着層を有する支持台６を準備し、ＲＦＩＣ４が実装された配線板３を支持台６に実装する。具体的には、配線板３の第１主面ＰＳ１側を支持台６の粘着層側にして固着する。支持台６が有する粘着層は、例えば粘着性を有する樹脂等である。この工程により、ＲＦＩＣ４が配線板３および粘着層を介して支持台６に強固に固定した状態で実装される。 Next, as shown in (2) in FIG. 8, a support base 6 having an adhesive layer on the main surface is prepared, and the wiring board 3 on which the RFIC 4 is mounted is mounted on the support base 6. Specifically, the first main surface PS1 side of the wiring board 3 is fixed to the support layer 6 with the adhesive layer side. The adhesive layer included in the support base 6 is, for example, an adhesive resin. By this step, the RFIC 4 is mounted in a state of being firmly fixed to the support base 6 via the wiring board 3 and the adhesive layer.

支持台６にＲＦＩＣ４を実装するこの工程が、本発明における「第１工程」の例である。 This step of mounting the RFIC 4 on the support base 6 is an example of the “first step” in the present invention.

次に、図８中の（３）に示すように、支持台６に第１小径柱状導体１４等、第２小径柱状導体２４等、第１大径柱状導体３１等および第２大径柱状導体４１等を立てる。具体的には、柱状導体（第１小径柱状導体１４等、第２小径柱状導体２４等、第１大径柱状導体３１等および第２大径柱状導体４１等）の各々の第１端側を、支持台６の粘着層側にして固着して立てる。これにより、柱状導体の各々の第１端側が粘着層を介して支持台６に強固に固定した状態で実装される。柱状導体は、それぞれＣｕ製の円柱状のポストである。柱状導体は、Ｃｕを主成分としたものに限定されるわけではないが、導電性や加工性の点でＣｕを主成分としたものが好ましい。 Next, as shown in (3) in FIG. 8, the first small diameter columnar conductor 14 and the like, the second small diameter columnar conductor 24 and the like, the first large diameter columnar conductor 31 and the like and the second large diameter columnar conductor and the like on the support base 6. Set 41 etc. Specifically, the first end sides of the columnar conductors (the first small-diameter columnar conductor 14 and the like, the second small-diameter columnar conductor 24 and the like, the first large-diameter columnar conductor 31 and the second large-diameter columnar conductor 41 and the like) Then, the support base 6 is fixed to stand on the adhesive layer side. Thereby, each columnar conductor is mounted in a state in which the first end side of each columnar conductor is firmly fixed to the support base 6 via the adhesive layer. Each columnar conductor is a columnar post made of Cu. The columnar conductors are not limited to those containing Cu as the main component, but those containing Cu as the main component are preferable in terms of conductivity and workability.

支持台６に、第１小径柱状導体、第２小径柱状導体、第１大径柱状導体および第２大径柱状導体の各々の第１端側を立てるこの工程が、本発明における「第２工程」の例である。 This step of standing the first end of each of the first small-diameter columnar conductor, the second small-diameter columnar conductor, the first large-diameter columnar conductor, and the second large-diameter columnar conductor on the support base 6 is the “second step in the present invention. Is an example.

次に、図８中の（４）および図９中の（５）に示すように、支持台６に、柱状導体と同じ高さ（少なくともＲＦＩＣ４および柱状導体の一部が埋設する高さ）まで樹脂本体１０を形成（樹脂を被覆）する。具体的には、支持台６上に、エポキシ樹脂等を所定高さ（少なくとも柱状導体の高さ以上）に塗付した樹脂本体１０を柱状導体ごと、図８中の（４）に示した研削線ＰＬ１まで平面的に研削（または切削、研磨）することで、樹脂本体１０の第２面ＶＳ２から柱状導体の第２端を露出させる。なお、エポキシ樹脂等を所定高さ（柱状導体の高さ以下）に塗布し、その後、樹脂本体１０を柱状導体ごと平面的に研削（または切削、研磨）することで、樹脂本体１０の第２面ＶＳ２に柱状導体の第２端を露出させてもよい。なお、樹脂本体１０は、液状樹脂の塗布により設けてもよいし、半硬化シート状樹脂の積層によって設けてもよい。 Next, as shown in (4) in FIG. 8 and (5) in FIG. 9, up to the same height as the columnar conductor (at least the height at which a part of the RFIC4 and the columnar conductor is embedded) on the support base 6. A resin body 10 is formed (coated with resin). Specifically, the resin body 10 coated with epoxy resin or the like at a predetermined height (at least the height of the columnar conductor) on the support base 6 is ground together with the columnar conductor as shown in (4) of FIG. The second end of the columnar conductor is exposed from the second surface VS2 of the resin main body 10 by planarly grinding (or cutting or polishing) the line PL1. It is to be noted that an epoxy resin or the like is applied to a predetermined height (below the height of the columnar conductor), and then the resin main body 10 is ground (or cut or polished) together with the columnar conductor in a second manner. The second end of the columnar conductor may be exposed on the surface VS2. The resin main body 10 may be provided by applying a liquid resin, or may be provided by stacking semi-cured sheet-like resins.

第１工程および第２工程の後に、支持台６に、ＲＦＩＣ４、第１小径柱状導体１４等、第２小径柱状導体２４等、第１大径柱状導体３１等および第２大径柱状導体４１等の各々の少なくとも一部が埋設する高さまで樹脂本体１０を被覆するこの工程が、本発明における「第３工程」の一例である。 After the first step and the second step, the RFIC 4, the first small-diameter columnar conductor 14, etc., the second small-diameter columnar conductor 24, etc., the first large-diameter columnar conductor 31, etc., the second large-diameter columnar conductor 41, etc. This step of covering the resin main body 10 to a height at which at least a part of each of them is buried is an example of the “third step” in the present invention.

また、図８中の（４）および図９中の（５）に示すように、樹脂本体１０から支持台６を取り除き、柱状導体の第１端および層間接続導体Ｖ１，Ｖ２等を、樹脂本体１０の第１面ＶＳ１および配線板３の第１主面ＰＳ１から露出させる。具体的には、樹脂本体１０を支持台６、配線板３および柱状導体ごと、図９中の（５）に示した研削線ＰＬ２まで平面的に研削（または切削、研磨）していくことで、柱状導体の第１端および層間接続導体Ｖ１，Ｖ２を、樹脂本体１０の第１面ＶＳ１および配線板３の第１主面ＰＳ１から露出させる。 Further, as shown in (4) in FIG. 8 and (5) in FIG. 9, the support base 6 is removed from the resin body 10, and the first ends of the columnar conductors, the interlayer connection conductors V1, V2, and the like are replaced with the resin body. It is exposed from the first surface VS1 of 10 and the first main surface PS1 of the wiring board 3. Specifically, the resin main body 10 is ground (or cut, polished) in a planar manner to the grinding line PL2 indicated by (5) in FIG. 9 together with the support base 6, the wiring board 3, and the columnar conductor. The first ends of the columnar conductors and the interlayer connection conductors V1 and V2 are exposed from the first surface VS1 of the resin body 10 and the first main surface PS1 of the wiring board 3.

第３工程の後に、樹脂本体１０から支持台６を取り除くこの工程が、本発明における「第７工程」の一例である。 This step of removing the support base 6 from the resin body 10 after the third step is an example of the “seventh step” in the present invention.

次に、図９中の（５）に示すように、樹脂本体１０の第２面ＶＳ２に、第１小径柱状導体１４等の第２端と第２小径柱状導体２４等の第２端との間を接続する第２小径導体パターンＳｐ２４等を形成する。具体的には、第１小径柱状導体１４等の第２端および第２小径柱状導体２４等の第２端が露出する樹脂本体１０の第２面ＶＳ２にＡｇ等の導電性ペーストをスクリーン印刷することによって、第２小径導体パターンＳｐ２４等を形成する。 Next, as shown in (5) in FIG. 9, the second surface VS 2 of the resin body 10 has a second end such as the first small-diameter columnar conductor 14 and a second end such as the second small-diameter columnar conductor 24. A second small-diameter conductor pattern Sp24 or the like that connects the two is formed. Specifically, a conductive paste such as Ag is screen-printed on the second surface VS2 of the resin body 10 where the second ends of the first small diameter columnar conductors 14 and the like and the second ends of the second small diameter columnar conductors 24 and the like are exposed. Thereby, the second small-diameter conductor pattern Sp24 and the like are formed.

なお、その後、Ｃｕ等のめっきによって、第２小径導体パターンＳｐ２４等にめっき膜を形成することが好ましい。Ｃｕめっき膜の場合は、Ｃｕ等のめっき膜の表面にＡｕめっき膜をさらに形成してもよい。これらのことで、第２小径導体パターンＳｐ２４等の膜厚が厚くなり、それらのＤＣＲが小さくなって、導体損失が低減できる。これにより、第１小径柱状導体１４等および第２小径柱状導体２４等のＤＣＲと同等程度にまで、第２小径導体パターンＳｐ２４等のＤＣＲを小さくできる。すなわち、この段階では、樹脂本体１０の外表面に第２小径導体パターンＳｐ２４等が露出したものであるため、この樹脂本体１０をめっき液に浸漬することにより、第２小径導体パターンＳｐ２４等の厚みを選択的に厚くすることができる。 After that, it is preferable to form a plating film on the second small-diameter conductor pattern Sp24 or the like by plating with Cu or the like. In the case of a Cu plating film, an Au plating film may be further formed on the surface of a plating film such as Cu. By these things, film thickness, such as 2nd small diameter conductor pattern Sp24, becomes thick, those DCR becomes small, and conductor loss can be reduced. Thereby, the DCR of the second small diameter conductor pattern Sp24 and the like can be reduced to the same extent as the DCR of the first small diameter columnar conductor 14 and the like and the second small diameter columnar conductor 24 and the like. That is, at this stage, since the second small-diameter conductor pattern Sp24 and the like are exposed on the outer surface of the resin body 10, the thickness of the second small-diameter conductor pattern Sp24 and the like is obtained by immersing the resin body 10 in the plating solution. Can be selectively thickened.

第３工程の後に、第２面ＶＳ２に、第１小径柱状導体１４等の第２端と第２小径柱状導体２４等の第２端との間を接続する第２小径導体パターンＳｐ２４等を形成するこの工程が、本発明における「第４工程」の一例である。 After the third step, the second small-diameter conductor pattern Sp24 and the like connecting the second end of the first small-diameter columnar conductor 14 and the second end of the second small-diameter columnar conductor 24 and the like are formed on the second surface VS2. This step is an example of the “fourth step” in the present invention.

また、図９中の（５）に示すように、樹脂本体１０の第１面ＶＳ１に、第１小径柱状導体１４等の第１端と第２小径柱状導体の第１端の少なくとも一方に接続される第１小径導体パターンＳｐ１３，Ｓｐ１４等を形成する。第１小径導体パターンＳｐ１４は、第２小径柱状導体２４と配線板３に設けられた層間接続導体Ｖ２とを接続する。具体的には、第１小径柱状導体１４等の第１端および第２小径柱状導体２４等の第１端が露出する樹脂本体１０の第１面ＶＳ１にＡｇ等の導電性ペーストをスクリーン印刷することによって、第１小径導体パターンＳｐ１３，Ｓｐ１４等を形成する。 Further, as shown in (5) of FIG. 9, the first surface VS1 of the resin body 10 is connected to at least one of the first end of the first small-diameter columnar conductor 14 and the first end of the second small-diameter columnar conductor. First small-diameter conductor patterns Sp13, Sp14 and the like are formed. The first small-diameter conductor pattern Sp14 connects the second small-diameter columnar conductor 24 and the interlayer connection conductor V2 provided on the wiring board 3. Specifically, a conductive paste such as Ag is screen-printed on the first surface VS1 of the resin body 10 where the first end of the first small-diameter columnar conductor 14 and the first end of the second small-diameter columnar conductor 24 and the like are exposed. Thus, the first small-diameter conductor patterns Sp13, Sp14, etc. are formed.

なお、その後、Ｃｕ等のめっきによって、第１小径導体パターンＳｐ１３，Ｓｐ１４等にめっき膜を形成することが好ましい。Ｃｕめっき膜の場合は、Ｃｕ等のめっき膜の表面にＡｕめっき膜をさらに形成してもよい。これらのことで、第１小径導体パターンＳｐ１３，Ｓｐ１４等の膜厚が厚くなり、それらのＤＣＲが小さくなって、導体損失が低減できる。これにより、第１小径柱状導体１４等および第２小径柱状導体２４等のＤＣＲと同等程度にまで、第１小径導体パターンＳｐ１３，Ｓｐ１４等のＤＣＲを小さくできる。すなわち、この段階では、樹脂本体１０の外表面に第１小径導体パターンＳｐ１３，Ｓｐ１４等が露出したものであるため、この樹脂本体１０をめっき液に浸漬することにより、第１小径導体パターンＳｐ１３，Ｓｐ１４等の厚みを選択的に厚くすることができる。 After that, it is preferable to form a plating film on the first small-diameter conductor patterns Sp13, Sp14, etc. by plating with Cu or the like. In the case of a Cu plating film, an Au plating film may be further formed on the surface of a plating film such as Cu. By these things, film thickness, such as 1st small diameter conductor patterns Sp13 and Sp14, becomes thick, those DCR becomes small, and conductor loss can be reduced. As a result, the DCR of the first small diameter conductor patterns Sp13, Sp14, etc. can be reduced to the same extent as the DCR of the first small diameter columnar conductor 14, etc. and the second small diameter columnar conductor 24, etc. That is, at this stage, since the first small-diameter conductor patterns Sp13, Sp14 and the like are exposed on the outer surface of the resin body 10, the first small-diameter conductor patterns Sp13, Sp13, etc. are immersed in the plating solution. The thickness of Sp14 or the like can be selectively increased.

第７工程の後に、第１面ＶＳ１に、第１小径柱状導体１４等の第１端と第２小径柱状導体等の第１端の少なくとも一方に接続される第１小径導体パターンＳｐ１４等を形成するこの工程が、本発明における「第８工程」の一例である。 After the seventh step, the first small-diameter conductor pattern Sp14 and the like connected to at least one of the first end of the first small-diameter columnar conductor 14 and the first end of the second small-diameter columnar conductor are formed on the first surface VS1. This step is an example of the “eighth step” in the present invention.

次に、図９中の（６）に示すように、少なくとも第２小径導体パターンＳｐ２４等の表面の一部に、第２絶縁層２を形成する。第２絶縁層２は、第２小径導体パターンＳｐ２４等の表面等を被覆する絶縁体膜であり、例えばエポキシ樹脂等の熱硬化性樹脂である。 Next, as shown in (6) in FIG. 9, the second insulating layer 2 is formed on at least part of the surface of the second small-diameter conductor pattern Sp24 and the like. The second insulating layer 2 is an insulator film that covers the surface of the second small-diameter conductor pattern Sp24 and the like, and is a thermosetting resin such as an epoxy resin, for example.

第４工程の後に、少なくとも第２小径導体パターンＳｐ２４等の表面の一部に、第２絶縁層２を形成するこの工程が、本発明における「第５工程」の一例である。 This step of forming the second insulating layer 2 on at least part of the surface of the second small-diameter conductor pattern Sp24 and the like after the fourth step is an example of the “fifth step” in the present invention.

また、図９中の（６）に示すように、少なくとも第１小径導体パターンＳｐ１４等の表面の一部に、第１絶縁層１を形成する。第１絶縁層１は、第１小径導体パターンＳｐ１４等の表面等を被覆する絶縁体膜であり、例えばエポキシ樹脂等の熱硬化性樹脂である。 Further, as indicated by (6) in FIG. 9, the first insulating layer 1 is formed on at least part of the surface of the first small-diameter conductor pattern Sp14 and the like. The first insulating layer 1 is an insulator film that covers the surface of the first small-diameter conductor pattern Sp14 and the like, and is a thermosetting resin such as an epoxy resin, for example.

第８工程の後に、少なくとも第１小径導体パターンＳｐ１４等の表面の一部に、第１絶縁層１を形成するこの工程が、本発明における「第９工程」の一例である。 This step of forming the first insulating layer 1 on at least a part of the surface of the first small-diameter conductor pattern Sp14 and the like after the eighth step is an example of the “ninth step” in the present invention.

次に、図９中の（７）に示すように、樹脂本体１０の第２面ＶＳ２および第２絶縁層２の表面に、第１大径柱状導体３１等の第２端と第２大径柱状導体４１等の第２端との間を接続する第２大径導体パターンＢｐ２１等を形成する。具体的には、第１大径柱状導体３１等の第２端および第２大径柱状導体４１等の第２端が露出する第２面ＶＳ２および第２絶縁層２の表面に、Ａｇ等の導電性ペーストをスクリーン印刷することによって、第２大径導体パターンＢｐ２１等を形成する。 Next, as shown in (7) in FIG. 9, the second end VS2 of the first large-diameter columnar conductor 31 and the second large-diameter are formed on the second surface VS2 of the resin body 10 and the surface of the second insulating layer 2. A second large-diameter conductor pattern Bp21 and the like that connect between the second ends of the columnar conductors 41 and the like are formed. Specifically, Ag or the like is formed on the second surface VS2 and the surface of the second insulating layer 2 where the second end of the first large-diameter columnar conductor 31 and the second end of the second large-diameter columnar conductor 41 and the like are exposed. The second large-diameter conductor pattern Bp21 and the like are formed by screen printing a conductive paste.

なお、その後、Ｃｕ等のめっきによって、第２大径導体パターンＢｐ２１等にめっき膜を形成することが好ましい。Ｃｕめっき膜の場合は、Ｃｕ等のめっき膜の表面にＡｕめっき膜をさらに形成してもよい。これらのことで、第２大径導体パターンＢｐ２１等の膜厚が厚くなり、それらのＤＣＲが小さくなって、導体損失が低減できる。これにより、第１大径柱状導体３１等および第２大径柱状導体４１等のＤＣＲと同等程度にまで、第２大径導体パターンＢｐ２１等のＤＣＲを小さくできる。すなわち、この段階では、樹脂本体１０の外表面に第２大径導体パターンが露出したものであるため、この樹脂本体１０をめっき液に浸漬することにより、第２大径導体パターンの厚みを選択的に厚くすることができる。 After that, it is preferable to form a plating film on the second large-diameter conductor pattern Bp21 or the like by plating with Cu or the like. In the case of a Cu plating film, an Au plating film may be further formed on the surface of a plating film such as Cu. By these things, film thickness, such as 2nd large diameter conductor pattern Bp21, becomes thick, those DCR becomes small, and conductor loss can be reduced. Accordingly, the DCR of the second large-diameter conductor pattern Bp21 and the like can be reduced to the same extent as the DCR of the first large-diameter columnar conductor 31 and the second large-diameter columnar conductor 41 and the like. That is, at this stage, since the second large-diameter conductor pattern is exposed on the outer surface of the resin body 10, the thickness of the second large-diameter conductor pattern is selected by immersing the resin body 10 in the plating solution. Can be thickened.

第５工程の後に、第２面ＶＳ２および第２絶縁層２の表面に、第１大径柱状導体３１等の第２端と第２大径柱状導体４１等の第２端との間を接続する第２大径導体パターンＢｐ２１等を形成するこの工程が、本発明における「第６工程」の一例である。 After the fifth step, the second surface VS2 and the surface of the second insulating layer 2 are connected between the second end of the first large-diameter columnar conductor 31 and the second end of the second large-diameter columnar conductor 41 and the like. This step of forming the second large-diameter conductor pattern Bp21 and the like is an example of the “sixth step” in the present invention.

また、図９中の（７）に示すように、樹脂本体１０の第１面ＶＳ１および第１絶縁層１の表面に、第１大径柱状導体３１等の第１端および第２大径柱状導体４１等の第１端の少なくとも一方に接続される第１大径導体パターンＢｐ１１等を形成する。また、第１面ＶＳ１および第１絶縁層１の表面に、第１大径柱状導体３１と配線板３に設けられた層間接続導体Ｖ１とを接続する接続導体７１を形成する。具体的には、第１大径柱状導体３１等の第１端および第２大径柱状導体４１等の第１端が露出する第１面ＶＳ１および第１絶縁層１の表面に、Ａｇ等の導電性ペーストをスクリーン印刷することによって、第１大径導体パターンＢｐ１１，Ｂｐ１２等を形成する。 Further, as shown in (7) of FIG. 9, the first end VS1 of the first large-diameter columnar conductor 31 and the second large-diameter columnar shape are formed on the first surface VS1 and the surface of the first insulating layer 1 of the resin body 10. A first large-diameter conductor pattern Bp11 or the like connected to at least one of the first ends of the conductor 41 or the like is formed. A connection conductor 71 that connects the first large-diameter columnar conductor 31 and the interlayer connection conductor V 1 provided on the wiring board 3 is formed on the first surface VS 1 and the surface of the first insulating layer 1. Specifically, Ag or the like is formed on the first surface VS1 and the surface of the first insulating layer 1 where the first end of the first large-diameter columnar conductor 31 and the first end of the second large-diameter columnar conductor 41 and the like are exposed. The first large-diameter conductor patterns Bp11, Bp12, etc. are formed by screen printing the conductive paste.

なお、その後、Ｃｕ等のめっきによって、第１大径導体パターンＢｐ１１，Ｂｐ１２等にめっき膜を形成することが好ましい。Ｃｕめっき膜の場合は、Ｃｕ等のめっき膜の表面にＡｕめっき膜をさらに形成してもよい。これらのことで、第１大径導体パターンＢｐ１１，Ｂｐ１２等の膜厚が厚くなり、それらのＤＣＲが小さくなって、導体損失が低減できる。これにより、第１大径柱状導体３１等および第２大径柱状導体４１等のＤＣＲと同等程度にまで、第１大径導体パターンＢｐ１１，Ｂｐ１２等のＤＣＲを小さくできる。すなわち、この段階では、樹脂本体１０の外表面に第１大径導体パターンＢｐ１１，Ｂｐ１２等が露出したものであるため、この樹脂本体１０をめっき液に浸漬することにより、第１大径導体パターンＢｐ１１，Ｂｐ１２等の厚みを選択的に厚くすることができる。 After that, it is preferable to form a plating film on the first large-diameter conductor patterns Bp11, Bp12, etc. by plating with Cu or the like. In the case of a Cu plating film, an Au plating film may be further formed on the surface of a plating film such as Cu. By these things, film thickness of 1st large diameter conductor pattern Bp11, Bp12 grade | etc., Becomes thick, those DCR becomes small, and conductor loss can be reduced. Thereby, DCR of 1st large diameter conductor pattern Bp11, Bp12, etc. can be made small to the same extent as DCR of 1st large diameter columnar conductor 31 grade | etc., And 2nd large diameter columnar conductor 41 grade | etc.,. That is, at this stage, since the first large-diameter conductor patterns Bp11, Bp12 and the like are exposed on the outer surface of the resin body 10, the first large-diameter conductor pattern is immersed in the plating solution. The thicknesses of Bp11, Bp12, etc. can be selectively increased.

第９工程の後に、第１面ＶＳ１および第１絶縁層１の表面に、第１大径柱状導体３１等の第１端および第２大径柱状導体４１等の第１端の少なくとも一方に接続される第１大径導体パターンＢｐ１１等を形成するこの工程が、本発明における「第１０工程」の一例である。 After the ninth step, the first surface VS1 and the surface of the first insulating layer 1 are connected to at least one of the first end of the first large-diameter columnar conductor 31 and the first end of the second large-diameter columnar conductor 41 and the like. This step of forming the first large-diameter conductor pattern Bp11 and the like is an example of the “tenth step” in the present invention.

その後、必要に応じて、樹脂本体１０のうち、導体パターン（第１大径導体パターンＢｐ１１等、第２大径導体パターンＢｐ２１等、第１小径導体パターンＳｐ１３，Ｓｐ１４等、第２小径導体パターンＳｐ２４等）の形成面（第１面ＶＳ１や第２面ＶＳ２）に保護層６１，６２を形成する。保護層６１，６２は例えば酸化防止用の保護用樹脂膜（ソルダーレジスト膜等）である。 After that, in the resin body 10, the conductor patterns (the first large-diameter conductor pattern Bp11 and the like, the second large-diameter conductor pattern Bp21 and the like, the first small-diameter conductor patterns Sp13 and Sp14, and the like, the second small-diameter conductor pattern Sp24, as necessary. And the like) are formed on the formation surface (first surface VS1 and second surface VS2). The protective layers 61 and 62 are, for example, a protective resin film (such as a solder resist film) for preventing oxidation.

なお、上記の工程は、マザー基板状態のまま処理される。上記の工程の後、マザー基板を個々の無線ＩＣデバイス１０１（個片）に分離する。 In addition, said process is processed with a mother substrate state. After the above steps, the mother board is separated into individual wireless IC devices 101 (pieces).

上記製造方法によれば、所望のインダクタンス値を有し、且つ、優れた電気特性を有する、特に直流抵抗の低減が可能な小型のヘリカル状コイルを備える無線ＩＣデバイス１０１を容易に製造できる。 According to the manufacturing method, it is possible to easily manufacture the wireless IC device 101 including a small helical coil having a desired inductance value and excellent electrical characteristics, in particular, capable of reducing DC resistance.

また、上記製造方法では、粘着層を有する支持台６を用いて柱状導体を強固に固定することできる。そのため、径の小さな柱状導体もヘリカル状コイルの製造に使用することができ、巻回数が多く、インダクタンスの高いヘリカル状コイルを製造することができる。 Moreover, in the said manufacturing method, a columnar conductor can be firmly fixed using the support stand 6 which has an adhesion layer. Therefore, a columnar conductor having a small diameter can also be used for manufacturing a helical coil, and a helical coil having a large number of turns and a high inductance can be manufactured.

《第２の実施形態》
第２の実施形態では、樹脂ブロック７Ａ，７Ｂおよび樹脂層１０Ｅを備える無線ＩＣデバイス１０２について示す。その他の構成については無線ＩＣデバイス１０１と実質的に同じである。<< Second Embodiment >>
In the second embodiment, a wireless IC device 102 including resin blocks 7A and 7B and a resin layer 10E is shown. Other configurations are substantially the same as those of the wireless IC device 101.

図１０（Ａ）は第２の実施形態に係る無線ＩＣデバイス１０２の断面図であり、図１０（Ｂ）は、図１０（Ａ）におけるＢ−Ｂ部分での無線ＩＣデバイス１０２の断面図である。 FIG. 10A is a cross-sectional view of the wireless IC device 102 according to the second embodiment, and FIG. 10B is a cross-sectional view of the wireless IC device 102 taken along the line BB in FIG. is there.

本実施形態に係る樹脂本体１０は、樹脂ブロック７Ａ，７Ｂおよび樹脂層１０Ｅを有する。 The resin main body 10 according to the present embodiment includes resin blocks 7A and 7B and a resin layer 10E.

樹脂ブロック７Ａは、長手方向がＺ軸方向に一致する直方体状であり、絶縁体が被覆された第１小径柱状導体１４等および第１大径柱状導体３１等が埋設されている。樹脂ブロック７Ａに埋設された第１小径柱状導体１４等および第１大径柱状導体３１等は、Ｚ軸方向に延伸するように配置され、各々の第１端および第２端が樹脂ブロック７Ａの長手方向の面から露出している。 The resin block 7A has a rectangular parallelepiped shape whose longitudinal direction coincides with the Z-axis direction, and the first small-diameter columnar conductor 14 and the like and the first large-diameter columnar conductor 31 and the like covered with an insulator are embedded therein. The first small-diameter columnar conductor 14 and the like and the first large-diameter columnar conductor 31 and the like embedded in the resin block 7A are arranged so as to extend in the Z-axis direction, and the first and second ends of the resin block 7A It is exposed from the longitudinal surface.

樹脂ブロック７Ｂは、長手方向がＺ軸方向に一致する直方体状であり、絶縁体が被覆された第２小径柱状導体２４等および第２大径柱状導体４１等が埋設されている。樹脂ブロック７Ｂに埋設された第２小径柱状導体２４等および第２大径柱状導体４１等は、Ｚ軸方向に延伸するように配置され、各々の第１端および第２端が樹脂ブロック７Ｂの長手方向の面から露出している。 The resin block 7B has a rectangular parallelepiped shape whose longitudinal direction coincides with the Z-axis direction, and the second small-diameter columnar conductor 24 and the like and the second large-diameter columnar conductor 41 and the like covered with an insulator are embedded therein. The second small-diameter columnar conductor 24 and the like and the second large-diameter columnar conductor 41 and the like embedded in the resin block 7B are arranged so as to extend in the Z-axis direction, and each of the first end and the second end of the resin block 7B. It is exposed from the longitudinal surface.

樹脂層１０Ｅは、長手方向がＺ軸方向に一致する直方体状である。 The resin layer 10E has a rectangular parallelepiped shape whose longitudinal direction matches the Z-axis direction.

樹脂ブロック７Ａ，７Ｂおよび樹脂層１０Ｅは例えばエポキシ樹脂等の熱硬化性樹脂であり、柱状導体に被覆された絶縁体は例えばポリウレタンである。 The resin blocks 7A and 7B and the resin layer 10E are thermosetting resins such as epoxy resin, and the insulator covered with the columnar conductor is polyurethane, for example.

本実施形態に係る無線ＩＣデバイス１０２によれば、第１の実施形態で述べた効果以外に、次のような効果を奏する。 The wireless IC device 102 according to the present embodiment has the following effects in addition to the effects described in the first embodiment.

（ｑ）本実施形態に係る無線ＩＣデバイス１０２では、柱状導体が埋設された樹脂ブロック７Ａ，７Ｂを備えるため、後に詳述するように、第１の実施形態に係る無線ＩＣデバイス１０１よりも、隣接する柱状導体同士の間隙を小さくできる。したがって、この構成により、ターン数の割にはコイルの占有面積（Ｘ軸方向およびＹ軸方向の寸法）をさらに小さくできる。また、この構成により、ヘリカル状コイルのコイル開口が大きな無線ＩＣデバイスを容易に形成できる。なお、樹脂ブロック７Ａ，７Ｂに埋設された柱状導体には、絶縁体が被覆されているため、隣接する柱状導体同士が接触しても電気的にショートする可能性は低い。すなわち、本実施形態では、樹脂ブロック７Ａ，７Ｂに埋設される柱状導体が束ねられ、互いに接触していてもよい。 (Q) Since the wireless IC device 102 according to the present embodiment includes the resin blocks 7A and 7B in which the columnar conductors are embedded, as will be described in detail later, the wireless IC device 102 according to the first embodiment The gap between adjacent columnar conductors can be reduced. Therefore, with this configuration, the area occupied by the coil (dimensions in the X-axis direction and the Y-axis direction) can be further reduced for the number of turns. Further, with this configuration, it is possible to easily form a wireless IC device in which the helical coil has a large coil opening. In addition, since the columnar conductors embedded in the resin blocks 7A and 7B are covered with an insulator, the possibility of an electrical short circuit is low even if adjacent columnar conductors come into contact with each other. That is, in this embodiment, the columnar conductors embedded in the resin blocks 7A and 7B may be bundled and in contact with each other.

本実施形態に係る無線ＩＣデバイス１０２は、例えば次の工程で製造される。図１１は、無線ＩＣデバイス１０２の製造工程の一部を順に示す断面図である。 The wireless IC device 102 according to the present embodiment is manufactured by, for example, the following process. FIG. 11 is a cross-sectional view sequentially illustrating a part of the manufacturing process of the wireless IC device 102.

図１１中の（１）に示すように、主面に粘着層を有する支持台６に、第２主面ＰＳ２にＲＦＩＣ４を実装した配線板３、樹脂ブロック７Ａ，７Ｂを実装する。樹脂ブロック７Ａ，７Ｂには、絶縁体で被覆された柱状導体（第１小径柱状導体１４等、第２小径柱状導体２４等、第１大径柱状導体３１等および第２大径柱状導体４１等）が埋設されている。具体的には、配線板３の第１主面ＰＳ１側を支持台６の粘着層側にして固着し、柱状導体の各々の第１端側を支持台６の粘着層側にして立てる（本発明における「第１工程」および「第２工程」に相当する）。 As shown in (1) of FIG. 11, the wiring board 3 and the resin blocks 7A and 7B on which the RFIC 4 is mounted on the second main surface PS2 are mounted on the support base 6 having the adhesive layer on the main surface. The resin blocks 7A and 7B include columnar conductors coated with an insulator (the first small-diameter columnar conductor 14, etc., the second small-diameter columnar conductor 24, etc., the first large-diameter columnar conductor 31, etc., the second large-diameter columnar conductor 41, etc. ) Is buried. Specifically, the wiring board 3 is fixed so that the first main surface PS1 side of the wiring board 3 is the adhesive layer side of the support base 6, and the first end of each columnar conductor is set to the adhesive layer side of the support base 6 (this book It corresponds to “first step” and “second step” in the invention).

樹脂ブロック７Ａ，７Ｂは、ポリウレタン等の絶縁体で被覆されたＣｕワイヤーをエポキシ樹脂等の熱硬化性樹脂に埋設し、それを所定長単位で切断することで得られる。 The resin blocks 7A and 7B are obtained by embedding a Cu wire covered with an insulator such as polyurethane in a thermosetting resin such as an epoxy resin, and cutting it in predetermined length units.

次に、図１１中の（２）および（３）に示すように、支持台６に、柱状導体の高さと同じ高さまで樹脂層１０Ｅを形成する。具体的には、支持台６上の樹脂ブロック７Ａ，７Ｂ以外の部分に、エポキシ樹脂等を所定高さ（少なくともＲＦＩＣ４および樹脂ブロック７Ａ，７Ｂの一部が埋設する高さ）まで塗付して樹脂層１０Ｅを形成する。その後、樹脂ブロック７Ａ，７Ｂおよび樹脂層１０Ｅごと、図１１中の（２）に示した研削線ＰＬ１まで平面的に研削（または切削、研磨）することで、樹脂本体１０の第２面ＶＳ２から柱状導体の第２端を露出させる（本発明における「第３工程」に相当する）。 Next, as shown in (2) and (3) in FIG. 11, the resin layer 10 E is formed on the support base 6 to the same height as the columnar conductor. Specifically, an epoxy resin or the like is applied to a portion other than the resin blocks 7A and 7B on the support base 6 to a predetermined height (at least the height where the RFIC 4 and the resin blocks 7A and 7B are embedded). Resin layer 10E is formed. Thereafter, the resin blocks 7A and 7B and the resin layer 10E are ground (or cut and polished) to the grinding line PL1 shown in (2) in FIG. The second end of the columnar conductor is exposed (corresponding to the “third step” in the present invention).

また、図１１中の（２）および（３）に示すように、樹脂本体１０から支持台６を取り除き、柱状導体の第１端および層間接続導体Ｖ１，Ｖ２等を、樹脂本体１０の第１面ＶＳ１および配線板３の第１主面ＰＳ１から露出させる。具体的には、樹脂ブロック７Ａ，７Ｂおよび樹脂層１０Ｅを支持台６、配線板３および柱状導体ごと、図１１中の（２）に示した研削線ＰＬ２まで平面的に研削（または切削、研磨）していくことで、柱状導体の第１端および層間接続導体Ｖ１，Ｖ２を、樹脂本体１０の第１面ＶＳ１および配線板３の第１主面ＰＳ１から露出させる（本発明における「第７工程」に相当する）。 Further, as shown in (2) and (3) in FIG. 11, the support base 6 is removed from the resin body 10, and the first ends of the columnar conductors and the interlayer connection conductors V 1 and V 2 are replaced with the first of the resin body 10. The surface VS1 and the first main surface PS1 of the wiring board 3 are exposed. Specifically, the resin blocks 7A and 7B and the resin layer 10E are ground (or cut or polished) in a plane up to the grinding line PL2 shown in (2) in FIG. 11 together with the support base 6, the wiring board 3, and the columnar conductor. ), The first ends of the columnar conductors and the interlayer connection conductors V1 and V2 are exposed from the first surface VS1 of the resin body 10 and the first main surface PS1 of the wiring board 3 (“seventh in the present invention”). Corresponds to "process").

その後の製造工程は、第１の実施形態において図９（５）から（７）で示した内容と同様である。 The subsequent manufacturing process is the same as that shown in FIGS. 9 (5) to (7) in the first embodiment.

上記製造方法では、予め柱状導体が埋設された樹脂ブロック７Ａ，７Ｂを用いるため、柱状導体を支持台６に立てる際に、隣接する柱状導体同士の接触を考える必要がない。なお、樹脂ブロック７Ａ，７Ｂに埋設された柱状導体には、絶縁体が被覆されているため、隣接する柱状導体同士が接触しても電気的にショートする可能性は低い。したがって、上記製造方法により、隣接する柱状導体同士の間隙が小さい無線ＩＣデバイスを容易に実現できる。 In the manufacturing method, since the resin blocks 7A and 7B in which the columnar conductors are embedded in advance are used, it is not necessary to consider contact between adjacent columnar conductors when the columnar conductors are erected on the support base 6. In addition, since the columnar conductors embedded in the resin blocks 7A and 7B are covered with an insulator, the possibility of an electrical short circuit is low even if adjacent columnar conductors come into contact with each other. Therefore, a wireless IC device with a small gap between adjacent columnar conductors can be easily realized by the above manufacturing method.

また、上記製造方法では、予め柱状導体が埋設された樹脂ブロック７Ａ，７Ｂを用いるため、第１の実施形態で示した無線ＩＣデバイス１０１の製造方法よりも、柱状導体を支持台６に容易に立てることができる。また、粘着層を有する支持台６に柱状導体をさらに強固に固定することできる。 Further, since the manufacturing method uses the resin blocks 7A and 7B in which the columnar conductors are embedded in advance, the columnar conductors can be more easily attached to the support base 6 than the manufacturing method of the wireless IC device 101 shown in the first embodiment. Can stand. In addition, the columnar conductor can be more firmly fixed to the support base 6 having the adhesive layer.

《第３の実施形態》
第３の実施形態では、磁性体コア８を備える無線ＩＣデバイス１０３について示す。その他の構成については無線ＩＣデバイス１０１と実質的に同じである。<< Third Embodiment >>
In the third embodiment, a wireless IC device 103 including a magnetic core 8 is shown. Other configurations are substantially the same as those of the wireless IC device 101.

図１２は第３の実施形態に係る無線ＩＣデバイス１０３の断面図である。 FIG. 12 is a cross-sectional view of the wireless IC device 103 according to the third embodiment.

本実施形態に係る樹脂本体１０は、内部にヘリカル状コイルに対する磁芯として作用するフェライト焼結体等の焼結体系の磁性体コア８を有する。また、樹脂本体１０は非磁性体である樹脂層１０Ａ，１０Ｂ，１０Ｃを有する。 The resin body 10 according to the present embodiment has a magnetic core 8 of a sintered system such as a ferrite sintered body that acts as a magnetic core for a helical coil. The resin main body 10 has resin layers 10A, 10B, and 10C that are non-magnetic materials.

本実施形態に係る無線ＩＣデバイス１０３によれば、第１の実施形態で述べた効果以外に、次のような効果を奏する。 The wireless IC device 103 according to the present embodiment has the following effects in addition to the effects described in the first embodiment.

（ｒ）磁性体コア８を備えるため、ヘリカル状コイルを大型化することなく、所期のインダクタンス値を有するヘリカル状コイルを備える無線ＩＣデバイスが得られる。また、無線ＩＣデバイスを低背にしても所期のインダクタンス値を得ることができる。 (R) Since the magnetic core 8 is provided, a wireless IC device including a helical coil having an intended inductance value can be obtained without increasing the size of the helical coil. In addition, the desired inductance value can be obtained even if the wireless IC device is low-profile.

（ｓ）磁性体コア８の集磁効果により、通信相手のアンテナとの磁界結合を高めることができる。 (S) Due to the magnetic flux collecting effect of the magnetic core 8, the magnetic field coupling with the communication partner antenna can be enhanced.

本実施形態に係る無線ＩＣデバイス１０３は、例えば次の工程で製造される。図１３、図１４および図１５は、無線ＩＣデバイス１０３の製造工程を順に示す断面図である。 The wireless IC device 103 according to the present embodiment is manufactured by, for example, the following process. 13, 14, and 15 are cross-sectional views sequentially illustrating the manufacturing process of the wireless IC device 103.

図１３中の（１）に示すように、主面に粘着層を有する支持台６に、第２主面ＰＳ２にＲＦＩＣ４を実装した配線板３、柱状導体（第１小径柱状導体１４等、第２小径柱状導体２４等、第１大径柱状導体３１等および第２大径柱状導体４１等）を実装する。具体的には、配線板３の第１主面ＰＳ１側を支持台６の粘着層側にして固着し、柱状導体の各々の第１端側を支持台６の粘着層側にして立てる（本発明における「第１工程」および「第２工程」に相当する）。 As shown in (1) in FIG. 13, the wiring board 3 in which the RFIC 4 is mounted on the second main surface PS2, the columnar conductor (the first small diameter columnar conductor 14, etc. 2 small-diameter columnar conductor 24, etc., first large-diameter columnar conductor 31, etc. and second large-diameter columnar conductor 41, etc.) are mounted. Specifically, the wiring board 3 is fixed so that the first main surface PS1 side of the wiring board 3 is the adhesive layer side of the support base 6, and the first end of each columnar conductor is set to the adhesive layer side of the support base 6 (this book It corresponds to “first step” and “second step” in the invention).

次に、図１３中の（２）に示すように、支持台６に非磁性体の樹脂層１０Ａを形成する。具体的には、支持台６上に、エポキシ樹脂等を所定高さ（少なくともＲＦＩＣ４および柱状導体の一部が埋設する高さ）まで樹脂層１０Ａを形成（樹脂を被覆）する。これにより、ＲＦＩＣ４が樹脂層１０Ａに埋設される。 Next, as shown in (2) in FIG. 13, a nonmagnetic resin layer 10 A is formed on the support base 6. Specifically, the resin layer 10 A is formed (covered with resin) on the support base 6 to a predetermined height (at least a height at which a part of the RFIC 4 and the columnar conductor is embedded). Thereby, the RFIC 4 is embedded in the resin layer 10A.

次に、図１３中の（３）に示すように、樹脂層１０Ａの硬化後、直方体形状の磁性体コア８を載置する。この磁性体コア８は、小型で高い透磁率（例えば比透磁率５０以上３００以下程度）を有するフェライト焼結体であることが好ましい。磁性体コア８の載置は、樹脂層１０Ａの硬化前であってもよい。 Next, as shown in (3) of FIG. 13, after the resin layer 10A is cured, the rectangular parallelepiped magnetic core 8 is placed. The magnetic core 8 is preferably a ferrite sintered body that is small and has a high magnetic permeability (for example, a relative magnetic permeability of about 50 to 300). The magnetic core 8 may be placed before the resin layer 10A is cured.

次に、図１４中の（４）に示すように、磁性体コア８の厚みまでエポキシ樹脂等の樹脂層１０Ｂを被覆する。 Next, as shown in (4) in FIG. 14, the resin layer 10 B such as an epoxy resin is coated up to the thickness of the magnetic core 8.

続いて、図１４中の（５）に示すように、柱状導体の高さと同じ高さまで樹脂層１０Ｃを形成（樹脂を被覆）する。具体的には、エポキシ樹脂等を所定高さ（少なくとも柱状導体の高さ以上）に塗付した樹脂層１０Ｃを柱状導体ごと、図１４中の（５）に示した研削線ＰＬ１まで平面的に研削（または切削、研磨）することで、樹脂本体１０の第２面ＶＳ２から柱状導体の第２端を露出させる（本発明における「第３工程」に相当する）。 Subsequently, as shown in (5) in FIG. 14, the resin layer 10C is formed (covered with resin) to the same height as the columnar conductor. Specifically, the resin layer 10C coated with an epoxy resin or the like at a predetermined height (at least the height of the columnar conductor) is planarly provided to the grinding line PL1 shown in (5) in FIG. By grinding (or cutting or polishing), the second end of the columnar conductor is exposed from the second surface VS2 of the resin body 10 (corresponding to the “third step” in the present invention).

また、図１４中の（５）に示すように、樹脂本体１０から支持台６を取り除き、柱状導体の第１端および層間接続導体Ｖ１，Ｖ２等を、樹脂本体１０の第１面ＶＳ１および配線板３の第１主面ＰＳ１から露出させる。具体的には、樹脂層１０Ａを支持台６、配線板３および柱状導体ごと、図１４中の（５）に示した研削線ＰＬ２まで平面的に研削（または切削、研磨）していくことで、柱状導体の第１端および層間接続導体Ｖ１，Ｖ２を、樹脂本体１０の第１面ＶＳ１および配線板３の第１主面ＰＳ１から露出させる（本発明における「第７工程」に相当する）。 Further, as shown in FIG. 14 (5), the support base 6 is removed from the resin body 10, and the first ends of the columnar conductors and the interlayer connection conductors V1, V2, etc. are connected to the first surface VS1 and the wiring of the resin body 10. The plate 3 is exposed from the first main surface PS1. Specifically, the resin layer 10A is ground (or cut or polished) in a planar manner to the grinding line PL2 indicated by (5) in FIG. 14 together with the support base 6, the wiring board 3, and the columnar conductor. The first ends of the columnar conductors and the interlayer connection conductors V1 and V2 are exposed from the first surface VS1 of the resin body 10 and the first main surface PS1 of the wiring board 3 (corresponding to “seventh step” in the present invention). .

次に、図１４中の（６）に示すように、樹脂本体１０の第２面ＶＳ２に、第１小径柱状導体１４等の第２端と第２小径柱状導体２４等の第２端との間を接続する第２小径導体パターンＳｐ２１等を形成する（本発明における「第４工程」に相当する）。 Next, as shown in (6) in FIG. 14, the second end VS2 of the resin body 10 is connected to the second end of the first small diameter columnar conductor 14 and the second end of the second small diameter columnar conductor 24 and the like. A second small-diameter conductor pattern Sp21 or the like that connects the two is formed (corresponding to the “fourth step” in the present invention).

また、図１４中の（６）に示すように、樹脂本体１０の第１面ＶＳ１に、第１小径柱状導体１４等の第１端と第２小径柱状導体２４等の第１端の少なくとも一方に接続される第１小径導体パターンＳｐ１３，Ｓｐ１４等を形成する（本発明における「第８工程」に相当する）。 14, at least one of the first end of the first small diameter columnar conductor 14 and the first end of the second small diameter columnar conductor 24 and the like is formed on the first surface VS1 of the resin body 10. First small-diameter conductor patterns Sp13, Sp14, and the like connected to are formed (corresponding to “eighth step” in the present invention).

次に、図１５中の（７）に示すように、少なくとも第２小径導体パターンＳｐ２１等の表面の一部に、第２絶縁層２を形成する（本発明における「第５工程」に相当する）。 Next, as shown in (7) in FIG. 15, the second insulating layer 2 is formed on at least part of the surface of the second small-diameter conductor pattern Sp21 and the like (corresponding to the “fifth step” in the present invention). ).

また、図１５中の（７）に示すように、少なくとも第１小径導体パターンＳｐ１３等の表面の一部に、第１絶縁層１を形成する（本発明における「第９工程」に相当する）。 Further, as shown in (7) in FIG. 15, the first insulating layer 1 is formed on at least a part of the surface of the first small-diameter conductor pattern Sp13 or the like (corresponding to “the ninth step” in the present invention). .

次に、図１５中の（８）に示すように、樹脂本体１０の第２面ＶＳ２および第２絶縁層２の表面に、第１大径柱状導体３１等の第２端と第２大径柱状導体４１等の第２端との間を接続する第２大径導体パターンＢｐ２１等を形成する（本発明における「第６工程」に相当する）。 Next, as shown in (8) in FIG. 15, the second end of the first large-diameter columnar conductor 31 and the second large diameter are formed on the second surface VS2 of the resin body 10 and the surface of the second insulating layer 2. A second large-diameter conductor pattern Bp21 and the like that connect between the second ends of the columnar conductors 41 and the like are formed (corresponding to “sixth step” in the present invention).

また、図１５中の（８）に示すように、樹脂本体１０の第１面ＶＳ１および第１絶縁層１の表面に、第１大径柱状導体３１等の第１端および第２大径柱状導体４１等の第１端の少なくとも一方に接続される第１大径導体パターンＢｐ１１，Ｂｐ１２等を形成する（本発明における「第１０工程」に相当する）。 Further, as shown in (8) in FIG. 15, the first end VS1 of the first large-diameter columnar conductor 31 and the second large-diameter columnar shape are formed on the first surface VS1 and the surface of the first insulating layer 1 of the resin body 10. First large-diameter conductor patterns Bp11, Bp12 and the like connected to at least one of the first ends of the conductor 41 and the like are formed (corresponding to the “tenth step” in the present invention).

その後、必要に応じて、樹脂本体１０のうち導体パターン（第１大径導体パターンＢｐ１１等、第２大径導体パターンＢｐ２１等、第１小径導体パターンＳｐ１３，Ｓｐ１４等、第２小径導体パターンＳｐ２４等）の形成面（第１面ＶＳ１や第２面ＶＳ２）に保護層６１，６２を形成する。保護層６１，６２は例えば酸化防止用の保護用樹脂膜（ソルダーレジスト膜等）である。 Thereafter, as necessary, the conductor pattern (first large-diameter conductor pattern Bp11, etc., second large-diameter conductor pattern Bp21, etc., first small-diameter conductor patterns Sp13, Sp14, etc., second small-diameter conductor pattern Sp24, etc.) ) Are formed on the formation surface (first surface VS1 and second surface VS2). The protective layers 61 and 62 are, for example, a protective resin film (such as a solder resist film) for preventing oxidation.

なお、上記の工程は、マザー基板状態のまま処理される。上記の工程の後、マザー基板を個々の無線ＩＣデバイス１０３（個片）に分離する。 In addition, said process is processed with a mother substrate state. After the above process, the mother board is separated into individual wireless IC devices 103 (pieces).

《第４の実施形態》
第４の実施形態では、樹脂本体１０Ｄの長手方向がＺ軸方向に一致する樹脂本体１０Ｄを備えた無線ＩＣデバイス１０４について示す。その他の構成については、無線ＩＣデバイス１０１と実質的に同じである。<< Fourth Embodiment >>
In 4th Embodiment, it shows about the radio | wireless IC device 104 provided with resin main body 10D in which the longitudinal direction of resin main body 10D corresponds to a Z-axis direction. Other configurations are substantially the same as those of the wireless IC device 101.

図１６は第４の実施形態に係る無線ＩＣデバイス１０４の断面図である。 FIG. 16 is a cross-sectional view of the wireless IC device 104 according to the fourth embodiment.

本実施形態では、柱状導体（第１小径柱状導体１１等、第２小径柱状導体２１等、第１大径柱状導体３１等および第２大径柱状導体４１等）の高さ寸法（Ｚ軸方向の高さ）が第１の実施形態に比べて大きい。すなわち、本実施形態に係る柱状導体は、第１の実施形態と比べて、アスペクト比（高さ／底面の直径）が大きい。したがって、本実施形態に係るヘリカル状コイルのコイル開口は、図１６に示すように、長手方向がＺ軸方向に一致する矩形状である。 In the present embodiment, the height dimension (Z-axis direction) of the columnar conductors (the first small-diameter columnar conductor 11 and the like, the second small-diameter columnar conductor 21 and the like, the first large-diameter columnar conductor 31 and the second large-diameter columnar conductor 41 and the like). Is higher than that of the first embodiment. That is, the columnar conductor according to the present embodiment has a larger aspect ratio (height / bottom diameter) than the first embodiment. Therefore, the coil opening of the helical coil according to the present embodiment has a rectangular shape whose longitudinal direction coincides with the Z-axis direction, as shown in FIG.

また、本実施形態に係る無線ＩＣデバイス１０４本体は、長手方向がＺ軸方向に一致する直方体状である。なお、本実施形態に係る樹脂本体１０Ｄの第１面ＶＳ１（または第２面ＶＳ２）の面積は、第１の実施形態に係る樹脂本体１０の第１面ＶＳ１（または第２面ＶＳ２）の面積と、略同じである。 Further, the wireless IC device 104 main body according to the present embodiment has a rectangular parallelepiped shape whose longitudinal direction coincides with the Z-axis direction. In addition, the area of 1st surface VS1 (or 2nd surface VS2) of resin main body 10D which concerns on this embodiment is the area of 1st surface VS1 (or 2nd surface VS2) of resin main body 10 which concerns on 1st Embodiment. It is almost the same.

本実施形態に係る無線ＩＣデバイス１０４によれば、第１の実施形態で述べた効果以外に、次のような効果を奏する。 The wireless IC device 104 according to the present embodiment has the following effects in addition to the effects described in the first embodiment.

（ｔ）本実施形態では、ヘリカル状コイルに対して柱状導体が占める割合が大きい。そのため、本実施形態に係るヘリカル状コイルのコイル開口面積が、第１の実施形態に係るヘリカル状コイルＨＣ１と同じ場合には、ヘリカル状コイル全体のＤＣＲをヘリカル状コイルＨＣ１よりも小さくでき、Ｑ値が高い（低損失の）ヘリカル状コイルを得ることができる。換言すると、本実施形態に係るヘリカル状コイル全体のＤＣＲがヘリカル状コイルＨＣ１と同じ場合には、ヘリカル状コイルＨＣ１に比べて、本実施形態に係るヘリカル状コイルのコイル開口面積は大きい。そのため、通信相手のアンテナに対して相対的に広い位置関係で通信できる。 (T) In the present embodiment, the ratio of the columnar conductor to the helical coil is large. Therefore, when the coil opening area of the helical coil according to the present embodiment is the same as that of the helical coil HC1 according to the first embodiment, the DCR of the entire helical coil can be made smaller than that of the helical coil HC1, and Q A helical coil having a high value (low loss) can be obtained. In other words, when the DCR of the entire helical coil according to this embodiment is the same as that of the helical coil HC1, the coil opening area of the helical coil according to this embodiment is larger than that of the helical coil HC1. Therefore, communication can be performed with a relatively wide positional relationship with respect to the communication partner antenna.

（ｕ）上述したように、本実施形態に係る樹脂本体１０Ｄの第１面ＶＳ１の面積は、第１の実施形態に係る樹脂本体１０の第１面ＶＳ１の面積と、略同じである。すなわち、第１の実施形態に係る無線ＩＣデバイス１０１と同じ個数の無線ＩＣデバイス１０４を、マザー基板から分離することができる。換言すると、本実施形態では、無線ＩＣデバイス１０１に比べて、樹脂本体１０Ｄの第１面ＶＳ１の面積が小さくても、無線ＩＣデバイス１０１と略同じ大きさのコイル開口面積を有する無線ＩＣデバイスを製造できる。したがって、本実施形態では、無線ＩＣデバイス１０１と略同じ大きさのコイル開口面積を有する無線ＩＣデバイスを同じ面積（ＸＹ平面上の面積）のマザー基板から、より多く分離することができる。 (U) As described above, the area of the first surface VS1 of the resin body 10D according to the present embodiment is substantially the same as the area of the first surface VS1 of the resin body 10 according to the first embodiment. That is, the same number of wireless IC devices 104 as the wireless IC devices 101 according to the first embodiment can be separated from the mother board. In other words, in the present embodiment, a wireless IC device having a coil opening area that is substantially the same size as the wireless IC device 101 even if the area of the first surface VS1 of the resin body 10D is smaller than that of the wireless IC device 101. Can be manufactured. Therefore, in this embodiment, it is possible to separate more wireless IC devices having a coil opening area that is approximately the same size as the wireless IC device 101 from the mother substrate having the same area (area on the XY plane).

以上に示したように、無線ＩＣデバイスのＺ軸方向の長さは、Ｘ軸方向の長さと同じか、それよりも長いことが好ましい。この構成により、上記（ｕ）で記載したように、同じ面積のマザー基板からの無線ＩＣデバイスの取り個数を多くできる。また、この構成により、大径ループおよび小径ループのＺ軸方向の長さが長くなるため、上記（ｔ）で記載したように、ヘリカル状コイル（大径ループや小径ループ）に対する柱状導体の割合が多くなり、ヘリカル状コイルのＤＣＲをさらに低減できる。 As described above, the length in the Z-axis direction of the wireless IC device is preferably the same as or longer than the length in the X-axis direction. With this configuration, as described in (u) above, it is possible to increase the number of wireless IC devices taken from the mother board having the same area. In addition, this configuration increases the length of the large-diameter loop and the small-diameter loop in the Z-axis direction. Therefore, as described in (t) above, the ratio of the columnar conductor to the helical coil (large-diameter loop or small-diameter loop) And the DCR of the helical coil can be further reduced.

《第５の実施形態》
第５の実施形態では、複数の大径ループと複数の小径ループとの接続関係が、第１の実施形態に係るヘリカル状コイルＨＣ１とは異なる例を示す。その他の構成についてはヘリカル状コイルＨＣ１と実質的に同じである。<< Fifth Embodiment >>
In the fifth embodiment, an example in which the connection relationship between a plurality of large-diameter loops and a plurality of small-diameter loops is different from that of the helical coil HC1 according to the first embodiment is shown. Other configurations are substantially the same as those of the helical coil HC1.

図１７は第５の実施形態に係るヘリカル状コイルＨＣ５の各導体部分を模式的に示した斜視図である。図１８（Ａ）は、ヘリカル状コイルＨＣ５が備える大径ループの導体部分を模式的に示した斜視図であり、図１８（Ｂ）は、ヘリカル状コイルＨＣ５が備える小径ループの導体部分を模式的に示した斜視図である。図１７では、ヘリカル状コイルＨＣ５の構造を解りやすくするため、小径ループを破線で図示している。 FIG. 17 is a perspective view schematically showing each conductor portion of the helical coil HC5 according to the fifth embodiment. FIG. 18A is a perspective view schematically showing a conductor portion of a large-diameter loop provided in the helical coil HC5, and FIG. 18B schematically shows a conductor portion of a small-diameter loop provided in the helical coil HC5. FIG. In FIG. 17, in order to make the structure of the helical coil HC5 easier to understand, the small-diameter loop is shown by a broken line.

ヘリカル状コイルＨＣ５は、複数の大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４、複数の小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４を備える。ヘリカル状コイルＨＣ５は、図１７に示すように、複数の大径ループＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４および複数の小径ループＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４が、Ｙ軸方向に交互に順次交互に配列され、且つ、交互に順次接続されて導通する。 The helical coil HC5 includes a plurality of large diameter loops BL1, BL2, BL3, BL4 and a plurality of small diameter loops SL1, SL2, SL3, SL4. In the helical coil HC5, as shown in FIG. 17, a plurality of large-diameter loops BL1, BL2, BL3, BL4 and a plurality of small-diameter loops SL1, SL2, SL3, SL4 are alternately and alternately arranged in the Y-axis direction. In addition, they are alternately connected in sequence and conducted.

この構成により、第１の実施形態に係るヘリカル状コイルＨＣ１と同様の作用・効果を奏することができる。 With this configuration, the same operations and effects as the helical coil HC1 according to the first embodiment can be achieved.

なお、本実施形態では、４つの大径ループと４つの小径ループを備える構成例を示したが、これに限定されるものではない。大径ループの数と小径ループの数が同数である必要はない。大径ループの数と小径ループの数が１であり、１つの大径ループと１つの小径ループとを接続して２ターンのヘリカル状のコイルを構成してもよい。また、１つの大径ループに１つの小径ループを接続してスパイラル状のコイルを構成してもよい。 In the present embodiment, a configuration example including four large-diameter loops and four small-diameter loops is shown, but the present invention is not limited to this. The number of large diameter loops and the number of small diameter loops need not be the same. The number of large-diameter loops and the number of small-diameter loops may be 1, and one large-diameter loop and one small-diameter loop may be connected to form a two-turn helical coil. Further, a spiral coil may be formed by connecting one small diameter loop to one large diameter loop.

また、第１の実施形態では、大径コイルと小径コイルとを備えるヘリカル状コイルＨＣ１を示し、本実施形態では、大径ループと小径ループとを備えるヘリカル状コイルＨＣ４を示したが、これに限定されるものではない。本発明におけるヘリカル状コイルは、大径ループ、小径ループ、大径コイルおよび小径コイルの２つ以上を組み合わせる構成であればよい。なお、大径ループ、小径ループ、大径コイルおよび小径コイルの２つ以上を組み合わせる場合、それらを接続する順序についても適宜変更が可能である。 In the first embodiment, a helical coil HC1 having a large diameter coil and a small diameter coil is shown. In this embodiment, a helical coil HC4 having a large diameter loop and a small diameter loop is shown. It is not limited. The helical coil in this invention should just be the structure which combines two or more of a large diameter loop, a small diameter loop, a large diameter coil, and a small diameter coil. In addition, when combining two or more of a large diameter loop, a small diameter loop, a large diameter coil, and a small diameter coil, the order of connecting them can be changed as appropriate.

《第６の実施形態》
第６の実施形態では、大径ループおよび小径ループの構造が、第１の実施形態に係る無線ＩＣデバイス１０１とは異なる例を示す。その他の構成については無線ＩＣデバイス１０１と実質的に同じである。<< Sixth Embodiment >>
In the sixth embodiment, an example in which the structures of the large-diameter loop and the small-diameter loop are different from those of the wireless IC device 101 according to the first embodiment will be described. Other configurations are substantially the same as those of the wireless IC device 101.

図１９は第６の実施形態に係る無線ＩＣデバイス１０６の断面図である。 FIG. 19 is a cross-sectional view of the wireless IC device 106 according to the sixth embodiment.

本実施形態に係る大径ループ（図１９では、大径ループＢＬ１が表れている）は、大径Ｕ字状導体および第１大径導体パターンで構成される。大径Ｕ字状導体Ｂｂ１等は、それぞれ一連の金属部材であり、Ｘ軸方向およびＺ軸方向に延伸し、且つ、Ｙ軸方向に配列されるコの字（または逆Ｕ字状）の金属体である。本実施形態では、大径Ｕ字状導体全体が、いずれも樹脂本体１０に埋設される。本実施形態に係る大径Ｕ字状導体は、例えば断面円形のＣｕワイヤーを逆Ｕ字状に屈曲させた後、切断することで得られる。なお、この断面形状は矩形や多角形等であってもよい。 The large-diameter loop according to the present embodiment (the large-diameter loop BL1 appears in FIG. 19) includes a large-diameter U-shaped conductor and a first large-diameter conductor pattern. Each of the large-diameter U-shaped conductors Bb1 and the like is a series of metal members that extend in the X-axis direction and the Z-axis direction and are U-shaped (or inverted U-shaped) metals arranged in the Y-axis direction. Is the body. In the present embodiment, the entire large-diameter U-shaped conductor is embedded in the resin body 10. The large-diameter U-shaped conductor according to the present embodiment can be obtained by, for example, bending a Cu wire having a circular cross section into an inverted U shape and then cutting it. The cross-sectional shape may be a rectangle or a polygon.

本実施形態に係る小径ループ（図１９では、小径ループＳＬ４が表れている）は、小径Ｕ字状導体Ｓｂ４等および第１小径導体パターンで構成される。小径Ｕ字状導体Ｓｂ４等は、それぞれ一連の金属部材であり、Ｘ軸方向およびＺ軸方向に延伸し、且つ、Ｙ軸方向に配列されるコの字（または逆Ｕ字状）の金属体である。本実施形態では、小径Ｕ字状導体全体が、いずれも樹脂本体１０に埋設される。また、本実施形態では、図１９に示すように、小径Ｕ字状導体が、Ｙ軸方向から視て、大径Ｕ字状導体の内側に配置される。本実施形態に係る小径Ｕ字状導体は、例えば断面円形のＣｕワイヤーを逆Ｕ字状に屈曲させた後、切断することで得られる。なお、この断面形状は矩形や多角形等であってもよい。 The small-diameter loop according to the present embodiment (the small-diameter loop SL4 appears in FIG. 19) includes a small-diameter U-shaped conductor Sb4 and the like and a first small-diameter conductor pattern. Each of the small-diameter U-shaped conductors Sb4 and the like is a series of metal members that extend in the X-axis direction and the Z-axis direction and are arranged in the Y-axis direction and are U-shaped (or inverted U-shaped) metal bodies. It is. In the present embodiment, the entire small-diameter U-shaped conductor is embedded in the resin body 10. In the present embodiment, as shown in FIG. 19, the small-diameter U-shaped conductor is disposed inside the large-diameter U-shaped conductor as viewed from the Y-axis direction. The small-diameter U-shaped conductor according to the present embodiment can be obtained by, for example, bending a Cu wire having a circular cross section into an inverted U shape and then cutting it. The cross-sectional shape may be a rectangle or a polygon.

本実施形態では、これら大径Ｕ字状導体Ｂｂ１等および小径Ｕ字状導体Ｓｂ４等が、樹脂本体１０に埋設されるヘリカル状コイルＨＣ１の「第１部分」に相当する。 In the present embodiment, the large-diameter U-shaped conductor Bb1 and the like and the small-diameter U-shaped conductor Sb4 and the like correspond to the “first portion” of the helical coil HC1 embedded in the resin body 10.

本実施形態に係る無線ＩＣデバイス１０６によれば、第１の実施形態で述べた効果以外に、次のような効果を奏する。 The wireless IC device 106 according to the present embodiment has the following effects in addition to the effects described in the first embodiment.

（ｖ）本実施形態では、大径Ｕ字状導体が一連の金属部材であり、小径Ｕ字状導体が一連の金属部材である。この構成により、導電性ペーストの焼成による焼結金属体や、導電性薄膜のエッチングによる薄膜金属体等で構成する場合に比べて大径Ｕ字状導体および小径Ｕ字状導体のＤＣＲを十分に小さくできるので、さらにＱ値が高く、低損失のヘリカル状コイルが得られる。 (V) In this embodiment, the large-diameter U-shaped conductor is a series of metal members, and the small-diameter U-shaped conductor is a series of metal members. With this configuration, the DCR of the large-diameter U-shaped conductor and the small-diameter U-shaped conductor is sufficiently higher than that of a sintered metal body obtained by firing a conductive paste or a thin film metal body obtained by etching a conductive thin film. Since it can be reduced, a helical coil with a higher Q value and a lower loss can be obtained.

（ｗ）また、本実施形態では、大径Ｕ字状導体および小径Ｕ字状導体に一連の金属部材を利用する構造であるため、多層基板にヘリカル状コイルを形成する必要がなく、複雑な配線を引回す必要もない。そのため、コイル開口サイズの設計上の自由度に優れたコイル構造を容易に実現できる。また、この構成により、層間導体を有する複数の基材層を積層して高さ方向の接続部を形成する場合に比べて、接続箇所を減らすことができるため、ヘリカル状コイルの電気的信頼性がさらに高まる。 (W) Moreover, in this embodiment, since it is a structure using a series of metal members for a large-diameter U-shaped conductor and a small-diameter U-shaped conductor, it is not necessary to form a helical coil on a multilayer substrate, and it is complicated. There is no need to route the wiring. Therefore, it is possible to easily realize a coil structure excellent in design freedom of the coil opening size. In addition, this configuration can reduce the number of connection points as compared with the case where a plurality of base material layers having interlayer conductors are stacked to form a connection portion in the height direction, so that the electrical reliability of the helical coil can be reduced. Is further increased.

なお、本実施形態では、大径Ｕ字状導体および小径Ｕ字状導体がどちらも一連の金属部材である例を示したが、この構成に限定されるものではない。大径Ｕ字状導体または小径Ｕ字状導体のいずれか一方が、一連の金属部材であってもよい。 In the present embodiment, an example is shown in which both the large-diameter U-shaped conductor and the small-diameter U-shaped conductor are a series of metal members, but the present invention is not limited to this configuration. One of the large-diameter U-shaped conductor and the small-diameter U-shaped conductor may be a series of metal members.

本実施形態に係る無線ＩＣデバイス１０６は、例えば次の工程で製造される。図２０および図２１は無線ＩＣデバイス１０６の製造工程を順に示す断面図である。 The wireless IC device 106 according to the present embodiment is manufactured by, for example, the following process. 20 and 21 are cross-sectional views showing the manufacturing process of the wireless IC device 106 in order.

まず、図２０中の（１）に示すように、主面に粘着層を有する支持台６に、第２主面ＰＳ２にＲＦＩＣ４を実装された配線板３を実装する。具体的には、ＲＦＩＣ４が実装された配線板３の第１主面ＰＳ１側を、支持台６の粘着層側にして固着する（本実施形態に係る「第１工程」に相当する）。 First, as shown in (1) in FIG. 20, the wiring board 3 having the RFIC 4 mounted on the second main surface PS2 is mounted on the support base 6 having the adhesive layer on the main surface. Specifically, the first main surface PS1 side of the wiring board 3 on which the RFIC 4 is mounted is fixed with the adhesive layer side of the support base 6 (corresponding to the “first step” according to this embodiment).

次に、図２０中の（２）に示すように、支持台６に、一連の金属部材である小径Ｕ字状導体Ｓｂ４等および一連の金属部材である大径Ｕ字状導体Ｂｂ１等の各々の両端を立てる。具体的には、大径Ｕ字状導体Ｂｂ１等および小径Ｕ字状導体Ｓｂ４等の各々の両端を、支持台６の粘着層側にして固着する。これにより、大径Ｕ字状導体Ｂｂ１等および小径Ｕ字状導体Ｓｂ４等の各々の両端が粘着層を介して支持台６に強固に固定した状態で実装される。大径Ｕ字状導体Ｂｂ１等および小径Ｕ字状導体Ｓｂ４等は一連の金属部材であり、例えば逆Ｕ字状に屈曲させた断面円形のＣｕワイヤーである。大径Ｕ字状導体および小径Ｕ字状導体は、Ｃｕを主成分としたものに限定されるわけではないが、導電率や加工性の点でＣｕを主成分としたものが好ましい。 Next, as shown in (2) in FIG. 20, each of the support base 6 includes a small-diameter U-shaped conductor Sb4 that is a series of metal members and a large-diameter U-shaped conductor Bb1 that is a series of metal members. Stand both ends. Specifically, both ends of the large-diameter U-shaped conductor Bb1 and the like and the small-diameter U-shaped conductor Sb4 and the like are fixed to the adhesive layer side of the support base 6. Accordingly, both ends of the large-diameter U-shaped conductor Bb1 and the like and the small-diameter U-shaped conductor Sb4 and the like are mounted in a state of being firmly fixed to the support base 6 via the adhesive layer. The large-diameter U-shaped conductor Bb1 and the like and the small-diameter U-shaped conductor Sb4 and the like are a series of metal members, for example, a Cu wire having a circular cross section bent into an inverted U shape. The large-diameter U-shaped conductor and the small-diameter U-shaped conductor are not limited to those having Cu as the main component, but those having Cu as the main component are preferable in terms of conductivity and workability.

支持台６に、一連の金属部材である大径Ｕ字状導体Ｂｂ１等、および一連の金属部材である小径Ｕ字状導体Ｓｂ４等の各々の両端を立てるこの工程が、本発明における「第１１工程」の一例である。 This step of standing both ends of the large-diameter U-shaped conductor Bb1 as a series of metal members and the small-diameter U-shaped conductor Sb4 as a series of metal members on the support base 6 is the "11th invention" in the present invention. It is an example of a “process”.

次に、図２０中の（３）に示すように、支持台６に、ＲＦＩＣ４、大径Ｕ字状導体Ｂｂ１等および小径Ｕ字状導体Ｓｂ４等の各々の少なくとも一部が埋設する高さまで、樹脂本体１０を形成（樹脂を被覆）する。具体的には、支持台６上に、エポキシ樹脂等を所定高さ（ＲＦＩＣ４、大径Ｕ字状導体Ｂｂ１等および小径Ｕ字状導体Ｓｂ４等の高さ以上）に塗布する。 Next, as shown in (3) in FIG. 20, up to a height at which at least a part of each of the RFIC 4, the large-diameter U-shaped conductor Bb1, and the small-diameter U-shaped conductor Sb4 is embedded in the support base 6, A resin body 10 is formed (coated with resin). Specifically, an epoxy resin or the like is applied onto the support base 6 at a predetermined height (more than the height of the RFIC 4, the large-diameter U-shaped conductor Bb1, etc., and the small-diameter U-shaped conductor Sb4).

第１工程および第１１工程の後に、支持台６に、ＲＦＩＣ４、大径Ｕ字状導体Ｂｂ１等および小径Ｕ字状導体Ｓｂ４等の各々の少なくとも一部が埋設する高さまで、樹脂本体１０を被覆するこの工程が、本発明における「第１２工程」の一例である。 After the first step and the eleventh step, the support body 6 is covered with the resin body 10 to such a height that at least a part of each of the RFIC 4, the large-diameter U-shaped conductor Bb1, etc. and the small-diameter U-shaped conductor Sb4 is embedded. This step is an example of the “twelfth step” in the present invention.

次に、図２０中の（３）および図２１中の（４）に示すように、樹脂本体１０から支持台６を取り除き、大径Ｕ字状導体Ｂｂ１等の両端、小径Ｕ字状導体Ｓｂ４等の両端および層間接続導体Ｖ１，Ｖ２を、樹脂本体１０の第１面ＶＳ１および配線板３の第１主面ＰＳ１から露出させる。具体的には、樹脂本体１０を支持台６、配線板３、大径Ｕ字状導体Ｂｂ１等および小径Ｕ字状導体Ｓｂ１等ごと、図２０中の（３）に示した研削線ＰＬ２まで平面的に研削（または切削、研磨）していくことで、大径Ｕ字状導体Ｂｂ１等の両端、小径Ｕ字状導体Ｓｂ４等の両端および層間接続導体Ｖ１，Ｖ２を、第１面ＶＳ１および第１主面ＰＳ１から露出させる。 Next, as shown in (3) in FIG. 20 and (4) in FIG. 21, the support base 6 is removed from the resin body 10, and both ends of the large-diameter U-shaped conductor Bb1 and the like, the small-diameter U-shaped conductor Sb4 are removed. And the like, and the interlayer connection conductors V 1 and V 2 are exposed from the first surface VS 1 of the resin body 10 and the first main surface PS 1 of the wiring board 3. Specifically, the resin body 10 is flattened to the grinding line PL2 shown in (3) of FIG. 20 together with the support base 6, the wiring board 3, the large-diameter U-shaped conductor Bb1, and the small-diameter U-shaped conductor Sb1. By grinding (or cutting, polishing) in an automatic manner, both ends of the large-diameter U-shaped conductor Bb1 and the like, both ends of the small-diameter U-shaped conductor Sb4 and the interlayer connection conductors V1 and V2 are connected to the first surface VS1 and the first surface VS1. 1 It exposes from main surface PS1.

第１２工程の後に、樹脂本体１０から支持台６を取り除くこの工程が、本発明における「第１３工程」の一例である。 This step of removing the support base 6 from the resin body 10 after the twelfth step is an example of the “13th step” in the present invention.

続いて、図２１中の（４）に示すように、樹脂本体１０の第１面ＶＳ１に、小径Ｕ字状導体Ｓｂ４等の一端に接続される第１小径導体パターンＳｐ１３，Ｓｐ１４等を形成する。 Subsequently, as shown in FIG. 21 (4), first small-diameter conductor patterns Sp13, Sp14 and the like connected to one end of the small-diameter U-shaped conductor Sb4 and the like are formed on the first surface VS1 of the resin body 10. .

第１３工程の後に、第１面ＶＳ１に、小径Ｕ字状導体Ｓｂ４等の一端に接続される第１小径導体パターンＳｐ１３等を形成するこの工程が、本発明における「第１４工程」の一例である。 This step of forming the first small-diameter conductor pattern Sp13 or the like connected to one end of the small-diameter U-shaped conductor Sb4 or the like on the first surface VS1 after the thirteenth step is an example of the “fourteenth step” in the present invention. is there.

次に、図２１中の（５）に示すように、少なくとも第１小径導体パターンＳｐ１３等の表面の一部に、第１絶縁層１を形成する。第１絶縁層１は、第１小径導体パターンＳｐ１３等の表面等を被覆する絶縁体膜である。 Next, as shown in (5) in FIG. 21, the first insulating layer 1 is formed on at least part of the surface of the first small-diameter conductor pattern Sp13 and the like. The first insulating layer 1 is an insulator film that covers the surface of the first small-diameter conductor pattern Sp13 and the like.

第１４工程の後に、第１面ＶＳ１および第１小径導体パターンＳｐ１３等の表面に、第１絶縁層１を形成するこの工程が、本発明における「第１５工程」の一例である。 This step of forming the first insulating layer 1 on the surface of the first surface VS1 and the first small-diameter conductor pattern Sp13 after the fourteenth step is an example of the “fifteenth step” in the present invention.

次に、図２１中の（６）に示すように、樹脂本体１０の第１面ＶＳ１および第１絶縁層１の表面に、大径Ｕ字状導体Ｂｂ１等の一端に接続される第１大径導体パターンＢｐ１１，Ｂｐ１２等を形成する。 Next, as shown in (6) in FIG. 21, the first large surface VS1 of the resin body 10 and the surface of the first insulating layer 1 are connected to one end of the large-diameter U-shaped conductor Bb1 and the like. Diameter conductor patterns Bp11, Bp12, etc. are formed.

第１５工程の後に、第１面ＶＳ１および第１絶縁層１の表面に、大径Ｕ字状導体Ｂｂ１等の一端に接続される第１大径導体パターンＢｐ１１を形成するこの工程が、本発明における「第１６工程」の一例である。 This step of forming the first large-diameter conductor pattern Bp11 connected to one end of the large-diameter U-shaped conductor Bb1 etc. on the surface of the first surface VS1 and the first insulating layer 1 after the fifteenth step is the present invention. Is an example of the “sixteenth step”.

その後、必要に応じて、樹脂本体１０のうち導体パターン（第１大径導体パターンＢｐ１１，Ｂｐ１２等、第１小径導体パターンＳｐ１３，Ｓｐ１４等）の形成面（第１面ＶＳ１）に保護層６１を形成する。保護層６１は例えば酸化防止用の保護用樹脂膜（ソルダーレジスト膜等）である。 Thereafter, if necessary, a protective layer 61 is formed on the formation surface (first surface VS1) of the conductor pattern (first large-diameter conductor patterns Bp11, Bp12, etc., first small-diameter conductor patterns Sp13, Sp14, etc.) of the resin body 10. Form. The protective layer 61 is, for example, a protective resin film (such as a solder resist film) for preventing oxidation.

なお、上記の工程は、マザー基板状態のまま処理される。上記の工程の後、マザー基板を個々の無線ＩＣデバイス１０６（個片）に分離する。 In addition, said process is processed with a mother substrate state. After the above process, the mother substrate is separated into individual wireless IC devices 106 (pieces).

上記製造方法によれば、所望のインダクタンス値を有し、且つ、さらに優れた電気特性を有する、特に直流抵抗の低減が可能な小型のヘリカル状コイルを備える無線ＩＣデバイス１０６を容易に製造できる。 According to the above manufacturing method, it is possible to easily manufacture the wireless IC device 106 including a small helical coil having a desired inductance value and further excellent electrical characteristics, and particularly capable of reducing a direct current resistance.

《第７の実施形態》
第７の実施形態では、大径Ｕ字状導体および小径Ｕ字状導体の構造が、第６の実施形態に係る無線ＩＣデバイス１０６とは異なる例を示す。その他の構成については無線ＩＣデバイス１０６と実質的に同じである。<< Seventh Embodiment >>
In the seventh embodiment, an example in which the structures of the large-diameter U-shaped conductor and the small-diameter U-shaped conductor are different from those of the wireless IC device 106 according to the sixth embodiment is shown. Other configurations are substantially the same as those of the wireless IC device 106.

図２２は第７の実施形態に係る無線ＩＣデバイス１０７の断面図である。 FIG. 22 is a cross-sectional view of the wireless IC device 107 according to the seventh embodiment.

図２２に示すように、大径Ｕ字状導体（図２２では、大径Ｕ字状導体Ｂｂ１が表れている）および小径Ｕ字状導体（図２２では、小径Ｕ字状導体Ｓｂ４が表れている）は、円弧状（または逆Ｕ字状）の導体である。 As shown in FIG. 22, a large-diameter U-shaped conductor (a large-diameter U-shaped conductor Bb1 appears in FIG. 22) and a small-diameter U-shaped conductor (a small-diameter U-shaped conductor Sb4 appears in FIG. 22). Is an arc-shaped (or inverted U-shaped) conductor.

このような構成であっても、無線ＩＣデバイス１０７の基本的な構成は、第６の実施形態に係る無線ＩＣデバイス１０６と同様であり、無線ＩＣデバイス１０６と同様の作用・効果を奏する。 Even in such a configuration, the basic configuration of the wireless IC device 107 is the same as that of the wireless IC device 106 according to the sixth embodiment, and has the same operations and effects as the wireless IC device 106.

《その他の実施形態》
以上に示した各実施形態では、大径Ｕ字状導体Ｂｂ１，Ｂｂ２，Ｂｂ３，Ｂｂ４および小径Ｕ字状導体Ｓｂ１，Ｓｂ２，Ｓｂ３，Ｓｂ４が、樹脂本体１０の第１面ＶＳ１に対して垂直である構成を示したが、これに限定されるものではない。大径Ｕ字状導体Ｂｂ１，Ｂｂ２，Ｂｂ３，Ｂｂ４および小径Ｕ字状導体Ｓｂ１，Ｓｂ２，Ｓｂ３，Ｓｂ４は、樹脂本体１０の第１面ＶＳ１に対して非平行であればよく、樹脂本体１０の第１面ＶＳ１との間の成す角度が０°を超え、且つ、９０未満であればよい。<< Other Embodiments >>
In each of the embodiments described above, the large-diameter U-shaped conductors Bb1, Bb2, Bb3, and Bb4 and the small-diameter U-shaped conductors Sb1, Sb2, Sb3, and Sb4 are perpendicular to the first surface VS1 of the resin body 10. Although a certain configuration is shown, the present invention is not limited to this. The large-diameter U-shaped conductors Bb1, Bb2, Bb3, and Bb4 and the small-diameter U-shaped conductors Sb1, Sb2, Sb3, and Sb4 may be non-parallel to the first surface VS1 of the resin body 10, and The angle formed with the first surface VS1 may be greater than 0 ° and less than 90.

また、以上に示した第１から第４の各実施形態では、柱状導体（第１大径柱状導体、第２大径柱状導体、第１小径柱状導体および第２小径柱状導体）がＣｕ製ピンである例を示したが、この構成に限定されるものではない。柱状導体は、例えば樹脂本体１０に貫通孔を形成し、めっき処理により形成したスルーホール型の導体であってもよい。また、柱状導体は、樹脂本体１０に貫通孔を形成し、ここに導電性ペースト等を充填してなるビアホール型の導体であってもよい。 In each of the first to fourth embodiments described above, the columnar conductors (first large-diameter columnar conductor, second large-diameter columnar conductor, first small-diameter columnar conductor, and second small-diameter columnar conductor) are Cu pins. However, the present invention is not limited to this configuration. The columnar conductor may be a through-hole type conductor formed, for example, by forming a through hole in the resin main body 10 and plating. The columnar conductor may be a via-hole type conductor in which a through hole is formed in the resin body 10 and a conductive paste or the like is filled therein.

以上に示した各実施形態では、ヘリカル状コイルの巻回軸ＡＸが、Ｙ軸方向に平行である例を示したが、この構成に限定されるものではない。ヘリカル状コイルの巻回軸ＡＸは、樹脂本体１０の第１面ＶＳ１に沿っていればよく、例えばＸ軸方向に平行であってもよい。なお、ヘリカル状コイルの巻回軸ＡＸが第１面ＶＳ１に完全に平行である必要はない。本発明における第１面ＶＳ１に「沿った」状態とは、例えばヘリカル状コイルの巻回軸ＡＸが第１面ＶＳ１（Ｘ軸方向、Ｙ軸方向またはＺ軸方向）に対して０°から±４５°未満の範囲内をいう。 In each of the embodiments described above, the example in which the winding axis AX of the helical coil is parallel to the Y-axis direction is shown, but the present invention is not limited to this configuration. The winding axis AX of the helical coil only needs to be along the first surface VS1 of the resin body 10, and may be parallel to the X-axis direction, for example. Note that the winding axis AX of the helical coil does not have to be completely parallel to the first surface VS1. The state “along” with the first surface VS1 in the present invention means that, for example, the winding axis AX of the helical coil is from 0 ° to ± 1 ° with respect to the first surface VS1 (X-axis direction, Y-axis direction, or Z-axis direction). Within the range of less than 45 °.

また、以上に示した各実施形態では、配線板３を備える無線ＩＣデバイス１０１を示したが、本発明の無線ＩＣデバイスにおいて、配線板３は必須ではない。ＲＦＩＣ４のアンテナポートが、大径導体パターンまたは小径導体パターン等を介してヘリカル状コイルＨＣ１の第１端および第２端に直接接続される構造であってもよい。 Moreover, in each embodiment shown above, although the wireless IC device 101 provided with the wiring board 3 was shown, the wiring board 3 is not essential in the wireless IC device of this invention. The RFIC 4 may have a structure in which the antenna port of the RFIC 4 is directly connected to the first end and the second end of the helical coil HC1 via a large-diameter conductor pattern or a small-diameter conductor pattern.

また、以上に示した各実施形態では、小径Ｕ字状導体が、Ｙ軸方向から視て、大径Ｕ字状導体の内側に配置されている構成例を示したが、これに限定されるものではない。小径Ｕ字状導体の内外径寸法が、Ｙ軸方向から視て、大径Ｕ字状導体の内外径寸法よりも小さければよく、小径Ｕ字状導体の一部が、Ｙ軸方向から視て、大径Ｕ字状導体に重なっていてもよい。 Moreover, in each embodiment shown above, although the small diameter U-shaped conductor showed the structural example arrange | positioned inside the large diameter U-shaped conductor seeing from the Y-axis direction, it is limited to this. It is not a thing. The inner and outer diameter dimensions of the small-diameter U-shaped conductor need only be smaller than the inner and outer diameter dimensions of the large-diameter U-shaped conductor as viewed from the Y-axis direction, and a part of the small-diameter U-shaped conductor is viewed from the Y-axis direction. , May overlap the large-diameter U-shaped conductor.

以上に示した各実施形態では、ＲＦＩＣ４が配線板３の第２主面ＰＳ２に実装（搭載）されている構成について示したが、これに限定されるものではない。ＲＦＩＣ４は、例えば配線板３に内蔵されていてもよい。また、配線板３の第１主面ＰＳ１または第２主面ＰＳ２のいずれかにキャビティが形成され、このキャビティ内にＲＦＩＣ４が収容される構成であってもよい。 In each of the embodiments described above, the configuration in which the RFIC 4 is mounted (mounted) on the second main surface PS2 of the wiring board 3 is described, but the present invention is not limited to this. The RFIC 4 may be built in the wiring board 3, for example. Further, a configuration may be adopted in which a cavity is formed in either the first main surface PS1 or the second main surface PS2 of the wiring board 3, and the RFIC 4 is accommodated in the cavity.

また、以上に示した各実施形態では、複数の大径Ｕ字状導体Ｂｂ１，Ｂｂ２，Ｂｂ３，Ｂｂ４のそれぞれが略同形状であり、複数の小径Ｕ字状導体Ｓｂ１，Ｓｂ２，Ｓｂ３，Ｓｂ４のそれぞれが略同形状である構成例を示したが、これに限定されるものではない。本発明の作用・効果を奏する範囲において、複数の大径Ｕ字状導体はそれぞれが異なる形状でもよく、複数の小径Ｕ字状導体はそれぞれが異なる形状でもよい。なお、ヘリカル状コイルＨＣ１の製造の容易性等の観点から、複数の大径Ｕ字状導体はそれぞれが略同形状であることが好ましく、複数の小径Ｕ字状導体はそれぞれが略同形状であることが好ましい。 In each of the embodiments described above, the plurality of large-diameter U-shaped conductors Bb1, Bb2, Bb3, and Bb4 have substantially the same shape, and the plurality of small-diameter U-shaped conductors Sb1, Sb2, Sb3, and Sb4 Although the example of a structure which each has substantially the same shape was shown, it is not limited to this. In the range where the functions and effects of the present invention are exhibited, the plurality of large-diameter U-shaped conductors may have different shapes, and the plurality of small-diameter U-shaped conductors may have different shapes. From the viewpoint of ease of manufacturing the helical coil HC1, it is preferable that the plurality of large-diameter U-shaped conductors have substantially the same shape, and the plurality of small-diameter U-shaped conductors have approximately the same shape. Preferably there is.

以上に示した各実施形態では、第１絶縁層１が樹脂本体１０の第１面ＶＳ１の一部に形成され、第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４全体を被覆する例を示したが、この構成に限定されるものではない。第１絶縁層１は樹脂本体１０の第１面ＶＳ１の略全面に形成されていてもよい。なお、第１絶縁層１は、少なくとも第１小径導体パターンＳｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４と第１大径導体パターンＢｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４との間に介在するように形成されていればよい。 In each embodiment shown above, the 1st insulating layer 1 was formed in a part of 1st surface VS1 of the resin main body 10, and the example which coat | covers the 1st small diameter conductor pattern Sp11, Sp12, Sp13, Sp14 whole was shown. However, it is not limited to this configuration. The first insulating layer 1 may be formed on substantially the entire first surface VS 1 of the resin body 10. The first insulating layer 1 only needs to be formed so as to be interposed between at least the first small-diameter conductor patterns Sp11, Sp12, Sp13, Sp14 and the first large-diameter conductor patterns Bp11, Bp12, Bp13, Bp14. .

また、以上に示した各実施形態では、第２絶縁層２が樹脂本体１０の第２面ＶＳ２の一部に形成され、第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４全体を被覆する例を示したが、この構成に限定されるものではない。第２絶縁層２は樹脂本体１０の第２面ＶＳ２の略全面に形成されていてもよい。なお、第２絶縁層２は、少なくとも第２小径導体パターンＳｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４と第２大径導体パターンＢｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４との間に介在するように形成されていればよい。 Moreover, in each embodiment shown above, the 2nd insulating layer 2 is formed in a part of 2nd surface VS2 of the resin main body 10, and covers the 2nd small diameter conductor pattern Sp21, Sp22, Sp23, Sp24 whole. Although shown, it is not limited to this configuration. The second insulating layer 2 may be formed on substantially the entire second surface VS 2 of the resin body 10. The second insulating layer 2 may be formed so as to be interposed at least between the second small-diameter conductor patterns Sp21, Sp22, Sp23, Sp24 and the second large-diameter conductor patterns Bp21, Bp22, Bp23, Bp24. .

また、以上に示した各実施形態では、大径ループと小径ループとを備え、Ｙ軸方向から視て、二重巻きのヘリカル状コイルの例を示したが、この構成に限定されるものではない。本発明におけるヘリカル状コイルは、複数のループ（複数種の内外径を有したループ）を備え、Ｙ軸方向から視て、三重巻き以上であってもよい。 Moreover, in each embodiment shown above, it provided with the large diameter loop and the small diameter loop, and the example of the double winding helical coil was shown when it looked from the Y-axis direction, However, It is not limited to this structure Absent. The helical coil in the present invention includes a plurality of loops (loops having a plurality of types of inner and outer diameters), and may be triple or more windings when viewed from the Y-axis direction.

さらに、以上に示した各実施形態では、ＲＦＩＣ４とヘリカル状コイルとを備える無線ＩＣデバイスを示したが、この構成に限定されるものではない。例えば、チップキャパシタおよびＤＣ／ＤＣコンバータ用集積回路素子を、無線ＩＣデバイス内に設けることによってＤＣ／ＤＣコンバータモジュールを構成することもできる。 Furthermore, in each embodiment shown above, although the radio | wireless IC device provided with RFIC4 and a helical coil was shown, it is not limited to this structure. For example, a DC / DC converter module can be configured by providing a chip capacitor and an integrated circuit element for a DC / DC converter in a wireless IC device.

最後に、本発明の範囲は、以上に示した各実施形態ではなく、特許請求の範囲によって示される。さらに、本発明の範囲には、特許請求の範囲内と均等の範囲内で各実施形態からの変更が含まれる。 Finally, the scope of the present invention is shown not by the embodiments described above but by the claims. Furthermore, the scope of the present invention includes modifications from the embodiments within the scope equivalent to the claims.

ＢＬ１，ＢＬ２，ＢＬ３，ＢＬ４…大径ループ
ＳＬ１，ＳＬ２，ＳＬ３，ＳＬ４…小径ループ
ＡＸ…ヘリカル状コイルの巻回軸
ＢＣ…大径コイル
Ｂｅ１…大径コイルの第１端
Ｂｅ２…大径コイルの第２端
ＢＦＥ…大径コイルの形成領域
ＳＣ…小径コイル
Ｓｅ１…小径コイルの第１端
Ｓｅ２…小径コイルの第２端
ＳＦＥ…小径コイルの形成領域
Ｂｐ１１，Ｂｐ１２，Ｂｐ１３，Ｂｐ１４，Ｂｐ１５…第１大径導体パターン（ヘリカル状コイルの第２部分）
Ｂｐ２１，Ｂｐ２２，Ｂｐ２３，Ｂｐ２４…第２大径導体パターン（ヘリカル状コイルの第２部分）
Ｓｐ１１，Ｓｐ１２，Ｓｐ１３，Ｓｐ１４…第１小径導体パターン（ヘリカル状コイルの第２部分）
Ｓｐ２１，Ｓｐ２２，Ｓｐ２３，Ｓｐ２４…第２小径導体パターン（ヘリカル状コイルの第２部分）
１１，１２，１３，１４…第１小径柱状導体（ヘリカル状コイルの第１部分）
２１，２２，２３，２４…第２小径柱状導体（ヘリカル状コイルの第１部分）
３１，３２，３３，３４…第１大径柱状導体（ヘリカル状コイルの第１部分）
４１，４２，４３，４４…第２大径柱状導体（ヘリカル状コイルの第１部分）
Ｂｂ１，Ｂｂ２，Ｂｂ３，Ｂｂ４…大径Ｕ字状導体（ヘリカル状コイルの第１部分）
Ｓｂ１，Ｓｂ２，Ｓｂ３，Ｓｂ４…小径Ｕ字状導体（ヘリカル状コイルの第１部分）
ＨＣ１，ＨＣ５…ヘリカル状コイル
Ｅ１…ヘリカル状コイルの第１端
Ｅ２…ヘリカル状コイルの第２端
ＰＬ１，ＰＬ２…研削線
Ｖ１，Ｖ２…層間接続導体
１…第１絶縁層
２…第２絶縁層
３…配線板
ＰＳ１…配線板の第１主面
ＰＳ２…配線板の第２主面
４…ＲＦＩＣ
５…導電性接合材
６…支持台
７Ａ，７Ｂ…樹脂ブロック
８…磁性体コア
１０，１０Ｄ…樹脂本体
ＶＳ１…樹脂本体の第１面
ＶＳ２…樹脂本体の第２面
１０Ａ，１０Ｂ，１０Ｃ，１０Ｅ…樹脂層
６１，６２…保護層
８１，８２…実装用電極
１０１，１０２，１０３，１０４，１０６，１０７…無線ＩＣデバイスBL1, BL2, BL3, BL4 ... Large-diameter loops SL1, SL2, SL3, SL4 ... Small-diameter loop AX ... Helical coil winding axis BC ... Large-diameter coil Be1 ... Large-diameter coil first end Be2 ... Large-diameter coil Second end BFE ... Large-diameter coil formation region SC ... Small-diameter coil Se1 ... Small-diameter coil first end Se2 ... Small-diameter coil second end SFE ... Small-diameter coil formation region Bp11, Bp12, Bp13, Bp14, Bp15 ... First Large-diameter conductor pattern (second part of helical coil)
Bp21, Bp22, Bp23, Bp24 ... second large-diameter conductor pattern (second portion of helical coil)
Sp11, Sp12, Sp13, Sp14... First small-diameter conductor pattern (second portion of helical coil)
Sp21, Sp22, Sp23, Sp24 ... second small-diameter conductor pattern (second portion of helical coil)
11, 12, 13, 14... First small diameter columnar conductor (first portion of helical coil)
21, 22, 23, 24... Second small diameter columnar conductor (first portion of helical coil)
31, 32, 33, 34... First large-diameter columnar conductor (first portion of helical coil)
41, 42, 43, 44 ... second large diameter columnar conductor (first portion of helical coil)
Bb1, Bb2, Bb3, Bb4 ... Large-diameter U-shaped conductor (first portion of helical coil)
Sb1, Sb2, Sb3, Sb4 ... Small-diameter U-shaped conductor (first portion of helical coil)
HC1, HC5 ... Helical coil E1 ... Helical coil first end E2 ... Helical coil second end PL1, PL2 ... Grinding lines V1, V2 ... Interlayer connection conductor 1 ... First insulating layer 2 ... Second insulating layer 3 ... Wiring board PS1 ... First main surface PS2 of wiring board ... Second main surface 4 of wiring board ... RFIC
5 ... conductive bonding material 6 ... supports 7A, 7B ... resin block 8 ... magnetic cores 10, 10D ... resin body VS1 ... resin body first surface VS2 ... resin body second surfaces 10A, 10B, 10C, 10E ... Resin layers 61, 62 ... Protective layers 81, 82 ... Mounting electrodes 101, 102, 103, 104, 106, 107 ... Wireless IC devices

Claims

A resin body having a first surface and a second surface facing the first surface;
A helical coil having a first part embedded in the resin body and a second part patterned on the surface of the resin body, and having a winding axis along the first surface;
RFIC connected to the helical coil;
With
The helical coil is
Multiple large diameter loops;
Electrically connected to the plurality of large-diameter loops, as viewed from the winding axis direction, and a small diameter loop arranged inside the outer diameter of the plurality of large diameter loop,
With
Wherein the first portion has a first small diameter columnar conductor and a second small diameter columnar conductor, and a plurality of the first large径柱shaped conductor and a plurality of constituting a part of said plurality of large-diameter loops constitute part of the small loop A second large-diameter columnar conductor of
The second portion is formed on the first surface and is formed on the first surface with a plurality of first large-diameter conductor patterns constituting a part of the plurality of large-diameter loops, and a part of the small-diameter loop. The first small-diameter conductor pattern constituting the second portion and the second portion are formed on the second surface, and are formed on the second surface, the second small-diameter conductor pattern constituting a portion of the small-diameter loop, and the plurality A plurality of second large-diameter conductor patterns constituting a part of the large-diameter loop ,
At least a portion where the first large-diameter conductor pattern and the first small-diameter conductor pattern overlap each other, a first insulating layer is sandwiched between them ,
The plurality of second large-diameter conductor patterns are disposed across the second small-diameter conductor pattern in the winding axis direction in plan view of the second surface,
The plurality of second large-diameter conductor patterns and the second small-diameter conductor patterns are arranged without gaps in the winding axis direction in plan view of the second surface, and sandwich the second small-diameter conductor pattern. edges in the winding axis direction of the plurality of second major径導body pattern in plan view the second surface, that Do heavy on edge in the winding axis direction of the second small diameter conductive pattern A wireless IC device characterized by the above.

At least wherein the second major径導body pattern and the second small-diameter conductor pattern and overlap portion, the second insulating layer sandwiched wireless IC device according to claim 1.

A resin body having a first surface and a second surface facing the first surface;
A helical coil having a first part embedded in the resin body and a second part patterned on the surface of the resin body, and having a winding axis along the first surface;
RFIC connected to the helical coil;
With
The helical coil is
Multiple large diameter loops;
Electrically connected to the plurality of large-diameter loops, as viewed from the winding axis direction, and a small diameter loop arranged inside the outer diameter of the plurality of large diameter loop,
With
Wherein the first portion is a series of metal members forming a plurality of large diameter U-shaped conductor is a series of metal members constituting a part of said plurality of large-diameter loops, a portion of the small loop diameter look including a U-shaped conductor,
The second portion is formed on the first surface and is formed on the first surface with a plurality of first large-diameter conductor patterns constituting a part of the plurality of large-diameter loops, and a part of the small-diameter loop. A first small-diameter conductor pattern constituting
At least a portion where the first large-diameter conductor pattern and the first small-diameter conductor pattern overlap each other, a first insulating layer is sandwiched between them ,
The plurality of large-diameter U-shaped conductors are disposed across the small-diameter U-shaped conductor in the winding axis direction in plan view of the second surface,
The plurality of large-diameter U-shaped conductors and the small-diameter U-shaped conductors are arranged without gaps in the winding axis direction in plan view of the second surface, and sandwich the small-diameter U-shaped conductors. edges in the winding axis direction of the plurality of large diameter U-shaped conductor, said second surface in plan view, that Do heavy on edge in the winding axis direction of the small diameter U-shaped conductor A wireless IC device characterized by the above.

A wiring board having a first main surface and a second main surface facing the first main surface;
The wiring board is disposed such that the second main surface is embedded inside the resin main body, and the first main surface is exposed from the resin main body,
The RFIC, the second is mounted on the main surface, at least a part of which is embedded in the resin body, a wireless IC device according to any of claims 1 to 3.

The plurality of large-diameter loops and the small-diameter loops are arranged without gaps along the winding axis direction when viewed from a direction parallel to the first surface and a direction orthogonal to the winding axis direction. Item 5. The wireless IC device according to any one of Items 1 to 4 .

The helical coil, the plurality of large diameter loop and the small diameter loop, the sequentially arranged in the winding axis direction alternately, and is configured by sequentially connecting alternately one of claims 1 to 5 The wireless IC device according to 1.

The number of pre-Symbol small diameter loop is a multiple,
The plurality of large diameter loop, constitutes a large diameter coil of the helical shape are connected to each other,
The plurality of small-diameter loops are connected to each other to form a helical small-diameter coil,
The helical coil, said constructed the small-diameter coil on a large diameter coil is connected, the wireless IC device according to any of claims 1 to 5.

The extending direction from the first end to the second end of the large-diameter coil in the winding axis direction is opposite to the extending direction from the first end to the second end of the small-diameter coil in the winding axis direction. Yes,
The second end of the large-diameter coil is connected to the first end of the small-diameter coil;
At least a portion overlaps the formation region of the small-diameter coil in the winding axis direction, the wireless IC device according to claim 7 in the formation area of the large-diameter coil in the winding axis direction.

A resin body having a first surface and a second surface facing the first surface;
A small-diameter loop composed of a first small-diameter columnar conductor, a second small-diameter columnar conductor, a first small-diameter conductor pattern, and a second small-diameter conductor pattern, a first large-diameter columnar conductor, a second large-diameter columnar conductor, and a first large-diameter conductor A helical coil having a pattern and a large diameter loop composed of a second large diameter conductor pattern;
RFIC connected to the helical coil;
With
At least a portion where the first large-diameter conductor pattern and the first small-diameter conductor pattern overlap each other, a first insulating layer is sandwiched between them,
A method of manufacturing a wireless IC device, wherein a second insulating layer is sandwiched between at least a portion where the second large-diameter conductor pattern and the second small-diameter conductor pattern overlap,
A first step of mounting the RFIC on a support base;
A second step of standing on the support stand the first end side of each of the first small diameter columnar conductor, the second small diameter columnar conductor, the first large diameter columnar conductor, and the second large diameter columnar conductor;
After the first step and the second step, the RFIC, the first small-diameter columnar conductor, the second small-diameter columnar conductor, the first large-diameter columnar conductor, and the second large-diameter columnar conductor are placed on the support base. A third step of covering the resin body to a height at which at least a part of each is embedded;
A fourth step of forming, after the third step, the second small-diameter conductor pattern connecting the second end of the first small-diameter columnar conductor and the second small-diameter columnar conductor on the second surface;
After the fourth step, at least a part of the second small-diameter conductor pattern surface of a fifth step of forming the second insulating layer,
After the fifth step, the second end of the first large-diameter columnar conductor and the second end of the second large-diameter columnar conductor are connected to the second surface and the surface of the second insulating layer. A sixth step of forming the second large-diameter conductor pattern;
After the third step, a seventh step of removing the support base from the resin body;
After the seventh step, the first small-diameter conductor pattern connected to at least one of the first end of the first small-diameter columnar conductor or the first end of the second small-diameter columnar conductor is formed on the first surface. An eighth step;
A ninth step of forming the first insulating layer on at least a part of the surface of the first small-diameter conductor pattern after the eighth step;
After the ninth step, the first surface and the surface of the first insulating layer are connected to at least one of the first end of the first large-diameter columnar conductor or the first end of the second large-diameter columnar conductor. A tenth step of forming the first large-diameter conductor pattern;
A method of manufacturing a wireless IC device.

A resin body having a first surface and a second surface facing the first surface;
A helical coil having a small-diameter loop composed of a small-diameter U-shaped conductor and a first small-diameter conductor pattern, and a large-diameter loop composed of a large-diameter U-shaped conductor and a first large-diameter conductor pattern;
RFIC connected to the helical coil;
With
A method of manufacturing a wireless IC device, wherein a first insulating layer is sandwiched between at least a portion where the first large-diameter conductor pattern and the first small-diameter conductor pattern overlap,
A first step of mounting the RFIC the support base,
Said support base, and the eleventh step to make a both ends of each of said large diameter U-shaped conductor and the small U-shaped conductor is a series of metal members,
After the first step and the eleventh step, the support base, the RFIC, the twelfth step of coating said resin body to a height where each of the large diameter U-shaped conductor and the small U-shaped conductor is embedded When,
After the twelfth step, a thirteenth step of removing the support base from the resin body;
After the 13th step, the first surface, the fourteenth step of forming the first small diameter conductive pattern connected to one end of the small diameter U-shaped conductor,
After the fourteenth step, at least a part of the first small-diameter conductor pattern surface of a fifteenth step of forming the first insulating layer,
After the fifteenth step, the first 16 forming the the first surface and the surface of the first insulating layer, the first large径導body pattern connected to one end of the large diameter U-shaped conductor,
A method of manufacturing a wireless IC device.

The wireless IC device is:
A resin block in which the first small diameter columnar conductor, the second small diameter columnar conductor, the first large diameter columnar conductor, and the second large diameter columnar conductor are embedded;
The second step includes
The method for manufacturing a wireless IC device according to claim 9 , further comprising a step of mounting the resin block on the support base.

The first step includes
Mounting the RFIC on the second main surface of the wiring board having a first main surface and a second main surface facing the first main surface;
Mounting the first main surface side on the support;
Further comprising, a manufacturing method of a wireless IC device according to any of claims 9 to 11 a.

The support base has an adhesive layer on the main surface,
13. The method of manufacturing a wireless IC device according to claim 12 , wherein the first step further includes a step of fixing the first main surface side of the wiring board with the adhesive layer side.

The support base has an adhesive layer on the main surface,
The second step includes
The method further includes a step of fixing the first small diameter columnar conductor, the second small diameter columnar conductor, the first large diameter columnar conductor, and the second large diameter columnar conductor to the adhesive layer side. A method of manufacturing a wireless IC device according to claim 9 .

The support base has an adhesive layer on the main surface,
The eleventh step includes
The method of manufacturing a wireless IC device according to claim 10 , further comprising a step of fixing both ends of the large-diameter U-shaped conductor and the small-diameter U-shaped conductor to the adhesive layer side.