JP6364491B2 - 画像センサ及び熱赤外線センサを備える画像撮像装置並びに画像撮像装置を備える自動車 - Google Patents
画像センサ及び熱赤外線センサを備える画像撮像装置並びに画像撮像装置を備える自動車 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 25
- 238000003384 imaging method Methods 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 9
- 230000003595 spectral effect Effects 0.000 claims description 6
- 230000004297 night vision Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R11/00—Arrangements for holding or mounting articles, not otherwise provided for
- B60R11/04—Mounting of cameras operative during drive; Arrangement of controls thereof relative to the vehicle
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
- B60W30/00—Purposes of road vehicle drive control systems not related to the control of a particular sub-unit, e.g. of systems using conjoint control of vehicle sub-units
- B60W30/14—Adaptive cruise control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/14649—Infrared imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R2300/00—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle
- B60R2300/10—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle characterised by the type of camera system used
- B60R2300/106—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle characterised by the type of camera system used using night vision cameras
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Human Computer Interaction (AREA)
- Mechanical Engineering (AREA)
- Automation & Control Theory (AREA)
- Transportation (AREA)
- Studio Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Radiation Pyrometers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
Claims (5)
- 自動車の画像撮像装置(1)であって、
可視スペクトル範囲における光を取り込むように、且つ、写真画像データを提供するように、形成される画像センサ(2)と、遠赤外線範囲における熱放射線を取り込むように、且つ、サーモグラフィー画像データを提供するように、形成される熱赤外線センサ(3)と、を備え、
前記画像センサ(2)及び前記熱赤外線センサ(3)は、共通チップパッケージ(4)内に集積され、
前記画像センサ(2)及び前記熱赤外線センサ(3)が、前記チップパッケージ(4)内の共通基板(5)の一方の面上に配置され、
前記画像センサ(2)が、第1の撮像側面(13)を有し、前記熱赤外線センサ(3)が、第2の撮像側面(14)を有し、前記第1の撮像側面を介して、前記可視光線が取り込まれるとともに、前記第2の撮像側面を介して、前記熱放射線が取り込まれ、前記第1及び第2の撮像側面は、前記共通基板(5)に面しており、前記共通基板(5)は、前記可視光線及び前記熱放射線の両方を透過する素材で、形成され、
前記画像センサ(2)のための第1のマイクロレンズ(8)、及び、前記熱赤外線センサ(3)のための第2のマイクロレンズ(9)が、前記共通基板(5)の他方の面上に配置され且つ前記チップパッケージ(4)内に集積されている、ことを特徴とする画像撮像装置(1)。 - 前記共通チップパッケージ(4)は、CSP又はTSVパッケージである、
ことを特徴とする請求項1に記載の画像撮像装置(1)。 - 電子接点パッド(7)が、前記共通基板(5)上に設けられ、前記画像センサ(2)及び前記熱赤外線センサ(3)は、それぞれの画像データを送信するために、前記共通基板(5)に電子的に結合されている、
ことを特徴とする請求項1に記載の画像撮像装置(1)。 - 前記画像センサ(2)は、CMOS画像センサ又はCCD画像センサとして形成される、
ことを特徴とする請求項1乃至3のいずれかに記載の画像撮像装置(1)。 - 請求項1乃至4のいずれかに記載の画像撮像装置(1)を備える自動車。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013021519.6A DE102013021519A1 (de) | 2013-12-12 | 2013-12-12 | Bilderfassungseinrichtung mit einem Bildsensor und einem thermischen Infrarotsensor sowie Kraftfahrzeug mit einer Bilderfassungseinrichtung |
DE102013021519.6 | 2013-12-12 | ||
PCT/EP2014/073059 WO2015086217A1 (en) | 2013-12-12 | 2014-10-28 | Image capturing device with an image sensor and a thermal infrared sensor as well as motor vehicle with an image capturing device |
Publications (2)
Publication Number | Publication Date |
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JP2017502277A JP2017502277A (ja) | 2017-01-19 |
JP6364491B2 true JP6364491B2 (ja) | 2018-07-25 |
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JP2016538706A Active JP6364491B2 (ja) | 2013-12-12 | 2014-10-28 | 画像センサ及び熱赤外線センサを備える画像撮像装置並びに画像撮像装置を備える自動車 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160309098A1 (ja) |
EP (1) | EP3080981A1 (ja) |
JP (1) | JP6364491B2 (ja) |
KR (1) | KR101840154B1 (ja) |
CN (1) | CN105917642B (ja) |
DE (1) | DE102013021519A1 (ja) |
WO (1) | WO2015086217A1 (ja) |
Families Citing this family (9)
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US10875403B2 (en) * | 2015-10-27 | 2020-12-29 | Magna Electronics Inc. | Vehicle vision system with enhanced night vision |
US10132971B2 (en) | 2016-03-04 | 2018-11-20 | Magna Electronics Inc. | Vehicle camera with multiple spectral filters |
DE102017216573A1 (de) * | 2017-09-19 | 2019-03-21 | Robert Bosch Gmbh | Verfahren zum Herstellen einer Kamera und Kamera |
KR102450580B1 (ko) | 2017-12-22 | 2022-10-07 | 삼성전자주식회사 | 금속 배선 하부의 절연층 구조를 갖는 반도체 장치 |
CN108074941B (zh) * | 2017-12-26 | 2020-04-03 | Oppo广东移动通信有限公司 | 输入输出模组和电子装置 |
CN108074948B (zh) * | 2017-12-26 | 2021-01-08 | Oppo广东移动通信有限公司 | 电子装置 |
JP7237506B2 (ja) | 2018-10-02 | 2023-03-13 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
CN111147699B (zh) * | 2018-11-02 | 2022-01-07 | 南昌欧菲光电技术有限公司 | 电子设备和摄像装置及其安装座 |
US11800206B2 (en) | 2019-07-08 | 2023-10-24 | Calumino Pty Ltd. | Hybrid cameras |
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-
2013
- 2013-12-12 DE DE102013021519.6A patent/DE102013021519A1/de not_active Ceased
-
2014
- 2014-10-28 US US15/102,909 patent/US20160309098A1/en not_active Abandoned
- 2014-10-28 WO PCT/EP2014/073059 patent/WO2015086217A1/en active Application Filing
- 2014-10-28 JP JP2016538706A patent/JP6364491B2/ja active Active
- 2014-10-28 KR KR1020167015488A patent/KR101840154B1/ko active IP Right Grant
- 2014-10-28 EP EP14790078.1A patent/EP3080981A1/en not_active Withdrawn
- 2014-10-28 CN CN201480073711.XA patent/CN105917642B/zh active Active
Also Published As
Publication number | Publication date |
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CN105917642A (zh) | 2016-08-31 |
KR101840154B1 (ko) | 2018-03-19 |
WO2015086217A1 (en) | 2015-06-18 |
CN105917642B (zh) | 2018-11-02 |
US20160309098A1 (en) | 2016-10-20 |
DE102013021519A1 (de) | 2015-06-18 |
EP3080981A1 (en) | 2016-10-19 |
JP2017502277A (ja) | 2017-01-19 |
KR20160087832A (ko) | 2016-07-22 |
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