JP6353066B2 - オプトエレクトロニクスデバイス用のパターン化された電極コンタクト - Google Patents
オプトエレクトロニクスデバイス用のパターン化された電極コンタクト Download PDFInfo
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- JP6353066B2 JP6353066B2 JP2016550517A JP2016550517A JP6353066B2 JP 6353066 B2 JP6353066 B2 JP 6353066B2 JP 2016550517 A JP2016550517 A JP 2016550517A JP 2016550517 A JP2016550517 A JP 2016550517A JP 6353066 B2 JP6353066 B2 JP 6353066B2
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- 230000005693 optoelectronics Effects 0.000 title claims description 26
- 239000000463 material Substances 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 239000002952 polymeric resin Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 238000003491 array Methods 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 239000000975 dye Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000006163 transport media Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011149 active material Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
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- 230000005855 radiation Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- -1 WO 3 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- DKCRDQKHMMPWPG-UHFFFAOYSA-N 3-methylpiperidine-2,6-dione Chemical compound CC1CCC(=O)NC1=O DKCRDQKHMMPWPG-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/209—Light trapping arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Description
基材及び
基材の表面上に設けられたマイクロピラーのアレイ
を含んでいるマイクロピラー構造体であって、
マイクロピラーは光に対して実質的に透明であり、かつ
マイクロピラーの高さは最大で500μmである、
マイクロピラーアレイ構造体に関する。
1−基材ガラススライド洗浄(蒸留水+アセトン+イソプロパノール)。
2−ラック(SU8)コーティング:1mlラック/inch2の堆積後にスピン法(500rpm(10s)/加速100rmp/s+2000rpm(30s)/加速200rpm/s)ナイフによる端部上の過剰なラックの除去。
3−ソフトベーキング処理:ホットプレート(90℃)上で3.5分。
4−露光:140mJ/cm2のUV光(>350nm)。使用したマスクアライナーについて、10s露光。
5−ポストベーク:ホットプレート(90℃)上で3.5分。
6−現像:基材+露光ラックをSU−8現像液(MICRO−CHEM)に3.5分漬浸。
7−洗浄:イソプロパノールバス及びN2ガンによる乾燥。
8−ハードベーク:ホットプレート(300℃)上で30分。
本発明はさらに下記の態様を含む:
〈態様1〉
基材、及び
前記基材の表面上に設けられたマイクロピラーのアレイ
を含んでいるマイクロピラーアレイ構造体であって、
前記マイクロピラーは、光に対して実質的に透明であり、かつ
前記マイクロピラーの高さは、最大で500μmである、
マイクロピラーアレイ構造体。
〈態様2〉
それぞれのマイクロピラーが、六角形配列のアレイにおける隣接するマイクロピラーによって囲まれている、態様1に記載のマイクロピラーアレイ構造体。
〈態様3〉
前記マイクロピラーが、円柱形状、ピラミッド形状、又は円錐形状を有する、態様1又は2に記載のマイクロピラーアレイ構造体。
〈態様4〉
前記マイクロピラーが、有機ポリマー樹脂又はガラス製である、態様1〜3のいずれか一項に記載のマイクロピラーアレイ構造体。
〈態様5〉
前記マイクロピラーの表面が、ITO、FTO及びグラフェンからなる群より選択される透明導電性材料によってコートされている、態様1〜4のいずれか一項に記載のマイクロピラーアレイ構造体。
〈態様6〉
態様1〜5のいずれか一項に記載のマイクロピラーアレイ構造体を含んでいる、オプトエレクトロニクスデバイス。
〈態様7〉
光活性材料をさらに含む、態様6に記載のオプトエレクトロニクスデバイス。
〈態様8〉
前記光活性材料が、色素により増感されたメソポーラス酸化物である、態様7に記載のオプトエレクトロニクスデバイス。
〈態様9〉
前記マイクロピラー間の距離が、前記光活性材料内の拡散距離の2倍以下である、態様7又は8に記載のオプトエレクトロニクスデバイス。
〈態様10〉
前記オプトエレクトロニクスデバイスが、ソーラーセルである、態様7〜9のいずれか一項に記載のオプトエレクトロニクスデバイス。
Claims (9)
- 基材、及び
前記基材の表面上に設けられた、有機ポリマー樹脂製のマイクロピラーのアレイ
を含んでいるマイクロピラーアレイ構造体を含んでいるオプトエレクトロニクスデバイスであって、
前記マイクロピラーは、光に対して透明であり、
前記マイクロピラーは、0.5〜50μmの直径を有し、
前記マイクロピラーの高さは、最大で500μmであり、
前記マイクロピラー間の距離が1〜50μmの範囲内にあり、
それぞれのマイクロピラーが、六角形配列のアレイにおける隣接するマイクロピラーによって取り囲まれており、
前記マイクロピラーの表面が、ITO、FTO及びグラフェンからなる群より選択された透明導電性材料によってコートされている、
オプトエレクトロニクスデバイス。 - 前記マイクロピラーが、円柱形状、ピラミッド形状、又は円錐形状を有する、請求項1に記載のオプトエレクトロニクスデバイス。
- 前記基材がガラス製である、請求項1又は2に記載のオプトエレクトロニクスデバイス。
- 前記マイクロピラー間の距離が5〜25μmの範囲内にある、請求項1〜3のいずれか一項に記載のオプトエレクトロニクスデバイス。
- 光活性材料をさらに含む、請求項1〜4のいずれか一項に記載のオプトエレクトロニクスデバイス。
- 前記光活性材料が、色素により増感されたメソポーラス酸化物である、請求項5に記載のオプトエレクトロニクスデバイス。
- 前記マイクロピラー間の距離が前記光活性材料内の拡散距離の2倍以下である、請求項5又は6に記載のオプトエレクトロニクスデバイス。
- 前記オプトエレクトロニクスデバイスが、ソーラーセルである、請求項5〜7のいずれか一項に記載のオプトエレクトロニクスデバイス。
- 前記有機ポリマー樹脂製のマイクロピラーのアレイが、前記基材の表面上に直接設けられている、請求項1〜8のいずれか一項に記載のオプトエレクトロニクスデバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2014/052358 WO2015117658A1 (en) | 2014-02-06 | 2014-02-06 | Patterned electrode contacts for optoelectronic devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017512377A JP2017512377A (ja) | 2017-05-18 |
JP6353066B2 true JP6353066B2 (ja) | 2018-07-04 |
Family
ID=50068992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016550517A Expired - Fee Related JP6353066B2 (ja) | 2014-02-06 | 2014-02-06 | オプトエレクトロニクスデバイス用のパターン化された電極コンタクト |
Country Status (4)
Country | Link |
---|---|
US (1) | US20160343513A1 (ja) |
JP (1) | JP6353066B2 (ja) |
CN (1) | CN105981117B (ja) |
WO (1) | WO2015117658A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9812603B2 (en) * | 2014-05-30 | 2017-11-07 | Klaus Y. J. Hsu | Photosensing device with graphene |
US9812604B2 (en) * | 2014-05-30 | 2017-11-07 | Klaus Y. J. Hsu | Photosensing device with graphene |
US11347001B2 (en) * | 2020-04-01 | 2022-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method of fabricating the same |
CN111337168A (zh) * | 2020-04-15 | 2020-06-26 | 温州大学苍南研究院 | 一种石墨基压阻式柔性压力传感器及其制作方法 |
EP4006994A1 (en) * | 2020-11-26 | 2022-06-01 | Stmicroelectronics (Grenoble 2) Sas | Optoelectronic device |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005310388A (ja) * | 2004-04-16 | 2005-11-04 | Ebara Corp | 光電変換素子 |
JP2007273104A (ja) * | 2006-03-30 | 2007-10-18 | Fujikura Ltd | 作用極および光電変換素子、作用極の製造方法 |
JP4912172B2 (ja) * | 2007-02-01 | 2012-04-11 | Jx日鉱日石エネルギー株式会社 | 複合ナノロッド基板およびそれを用いた光電変換素子 |
JP2008218702A (ja) * | 2007-03-05 | 2008-09-18 | Pioneer Electronic Corp | 有機太陽電池 |
US20090194160A1 (en) * | 2008-02-03 | 2009-08-06 | Alan Hap Chin | Thin-film photovoltaic devices and related manufacturing methods |
CA2713910A1 (en) * | 2008-02-12 | 2009-08-20 | Michael Julian Brett | Photovoltaic device based on conformal coating of columnar structures |
WO2009116018A2 (en) * | 2008-03-21 | 2009-09-24 | Oerlikon Trading Ag, Trübbach | Photovoltaic cell and methods for producing a photovoltaic cell |
JP5452898B2 (ja) * | 2008-08-20 | 2014-03-26 | 積水化学工業株式会社 | 電極装置及びその製造方法 |
WO2010110888A1 (en) * | 2009-03-23 | 2010-09-30 | The Board Of Trustees Of The Leland Stanford Junior University | Quantum confinement solar cell fabriacated by atomic layer deposition |
US20110030770A1 (en) * | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Nanostructured organic solar cells |
RU2012132959A (ru) * | 2010-01-07 | 2014-02-27 | Шарп Кабусики Кайся | Элемент фотоэлектрического преобразования |
US9129751B2 (en) | 2010-03-29 | 2015-09-08 | Northern Illinois University | Highly efficient dye-sensitized solar cells using microtextured electron collecting anode and nanoporous and interdigitated hole collecting cathode and method for making same |
US8859423B2 (en) * | 2010-08-11 | 2014-10-14 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Nanostructured electrodes and active polymer layers |
KR101325646B1 (ko) * | 2010-09-16 | 2013-11-20 | 한국전자통신연구원 | 태양전지 및 그 형성방법 |
US9343609B2 (en) * | 2010-12-09 | 2016-05-17 | Faculdade De Ciencias E Tecnologia Da Universidade Nova De Lisboa | Mesoscopic optoelectronic devices comprising arrays of semiconductor pillars deposited from a suspension and production method thereof |
WO2012087352A2 (en) * | 2010-12-20 | 2012-06-28 | The Regents Of The University Of California | Superhydrophobic and superoleophobic nanosurfaces |
TWI467784B (zh) * | 2011-12-21 | 2015-01-01 | Univ Nat Cheng Kung | 太陽能電池 |
JP2013201001A (ja) * | 2012-03-23 | 2013-10-03 | Nippon Shokubai Co Ltd | 積層体並びに該積層体を用いた有機エレクトロルミネッセンス素子、発光ダイオード素子及び光電変換素子 |
US20130327386A1 (en) * | 2012-06-11 | 2013-12-12 | Tao Xu | Three-dimensional photovoltaic device |
-
2014
- 2014-02-06 JP JP2016550517A patent/JP6353066B2/ja not_active Expired - Fee Related
- 2014-02-06 WO PCT/EP2014/052358 patent/WO2015117658A1/en active Application Filing
- 2014-02-06 US US15/112,349 patent/US20160343513A1/en not_active Abandoned
- 2014-02-06 CN CN201480074943.7A patent/CN105981117B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017512377A (ja) | 2017-05-18 |
CN105981117A (zh) | 2016-09-28 |
CN105981117B (zh) | 2019-05-07 |
WO2015117658A1 (en) | 2015-08-13 |
US20160343513A1 (en) | 2016-11-24 |
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