JP6316981B2 - ゲルマニウム層をチャネル領域とする半導体装置およびその製造方法 - Google Patents
ゲルマニウム層をチャネル領域とする半導体装置およびその製造方法 Download PDFInfo
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- JP6316981B2 JP6316981B2 JP2016557764A JP2016557764A JP6316981B2 JP 6316981 B2 JP6316981 B2 JP 6316981B2 JP 2016557764 A JP2016557764 A JP 2016557764A JP 2016557764 A JP2016557764 A JP 2016557764A JP 6316981 B2 JP6316981 B2 JP 6316981B2
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- 229910052732 germanium Inorganic materials 0.000 title claims description 98
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 98
- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000001301 oxygen Substances 0.000 claims description 189
- 229910052760 oxygen Inorganic materials 0.000 claims description 189
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 168
- 238000010438 heat treatment Methods 0.000 claims description 78
- 239000012298 atmosphere Substances 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 126
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 47
- 239000000523 sample Substances 0.000 description 39
- 239000001257 hydrogen Substances 0.000 description 37
- 229910052739 hydrogen Inorganic materials 0.000 description 37
- 238000010586 diagram Methods 0.000 description 26
- -1 oxygen ions Chemical class 0.000 description 22
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 17
- 238000005468 ion implantation Methods 0.000 description 17
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 238000002513 implantation Methods 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 238000000137 annealing Methods 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000013074 reference sample Substances 0.000 description 7
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Description
12 酸化ゲルマニウム膜
14 ゲート電極
16 ソース領域
18 ドレイン領域
20 酸素イオン注入領域
24 絶縁膜
26 ソース電極
28 ドレイン電極
30 ゲルマニウム層
32 ゲート絶縁膜
34 ゲート電極
36 ソース領域
38 ドレイン領域
40 絶縁膜
42 ソース電極
44 ドレイン電極
46 高酸素濃度領域
48 低酸素濃度領域
50 チャネル領域
52 接合界面
54 キャップ
56 開口
Claims (10)
- ゲルマニウム層内に形成された第1導電型を有するチャネル領域と、
前記ゲルマニウム層内に形成され、前記第1導電型と異なる第2導電型を有するソース領域およびドレイン領域と、
を具備し、
前記チャネル領域における酸素濃度は、前記ソース領域およびドレイン領域の少なくとも一方の領域と前記少なくとも一方の領域を囲む前記第1導電型を有する領域との接合界面における酸素濃度より低いことを特徴とする半導体装置。 - 前記チャネル領域における酸素濃度は1×1016cm−3以下であり、前記接合界面における酸素濃度は1×1016cm−3より高いことを特徴とする請求項1記載の半導体装置。
- 前記チャネル領域における酸素濃度は5×1015cm−3以下であることを特徴とする請求項2記載の半導体装置。
- 前記第1導電型はp型であり、前記第2導電型はn型であることを特徴とする請求項1から3のいずれか一項記載の半導体装置。
- ゲルマニウム層内に形成された第1導電型を有するチャネル領域を形成する工程と、
前記ゲルマニウム層内に前記第1導電型と異なる第2導電型を有するソース領域およびドレイン領域を形成する工程と、
前記チャネル領域における酸素濃度が前記ソース領域およびドレイン領域の少なくとも一方の領域と前記少なくとも一方の領域を囲む前記第1導電型を有する領域との接合界面における酸素濃度より低くなるように酸素濃度を設定する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記酸素濃度を設定する工程は、
前記ゲルマニウム層内の前記チャネル領域となる領域が露出し、前記接合界面となる領域上の前記ゲルマニウム層の表面が露出しない状態で還元性雰囲気において前記ゲルマニウム層を熱処理する工程を含むことを特徴とする請求項5記載の半導体装置の製造方法。 - 前記熱処理する工程は、前記チャネル領域および前記接合界面の酸素濃度が1×1016cm−3以上のゲルマニウム層を熱処理する工程であることを特徴とする請求項6記載の半導体装置の製造方法。
- 前記熱処理する工程の前に、前記チャネル領域となる領域および前記接合界面となる領域に酸素を導入する工程を含むことを特徴とする請求項6または7記載の半導体装置の製造方法。
- 前記酸素濃度を設定する工程は、
前記チャネル領域となる領域に対し前記接合界面となる領域に選択的に酸素を導入する工程を含むことを特徴とする請求項5記載の半導体装置の製造方法。 - 前記酸素濃度を設定する工程は、
前記チャネル領域における酸素濃度が1×1016cm−3以下となり、前記接合界面における酸素濃度が1×1016cm−3より高くなるように前記酸素濃度を設定する工程であることを特徴とする請求項5から9のいずれか一項記載の半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014225622 | 2014-11-05 | ||
JP2014225622 | 2014-11-05 | ||
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JPS5693367A (en) | 1979-12-20 | 1981-07-28 | Fujitsu Ltd | Manufacture of semiconductor device |
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US5463237A (en) | 1993-11-04 | 1995-10-31 | Victor Company Of Japan, Ltd. | MOSFET device having depletion layer |
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US6596593B2 (en) | 2000-12-05 | 2003-07-22 | Seiko Instruments Inc. | Method of manufacturing semiconductor device employing oxygen implantation |
US7704896B2 (en) | 2005-01-21 | 2010-04-27 | Asm International, N.V. | Atomic layer deposition of thin films on germanium |
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