JP6316759B2 - Gas supply system cleaning method and substrate processing apparatus - Google Patents

Description

  The present invention relates to a gas supply system cleaning method and a substrate processing apparatus.

  In the manufacture of precision electronic products such as semiconductor devices, how to reduce particles in the process is an important issue. For example, in the manufacture of a semiconductor device, if particles are generated in the processing chamber of the substrate processing apparatus, the particles may adhere to the processing surface of the semiconductor wafer. Particles adhering to the surface to be processed can cause defects in the product being manufactured, thereby reducing the yield, or causing the quality of the thin film formed on the surface to be processed to be deteriorated or altered.

  Patent Document 1 describes a “member cleaning method in a reduced pressure processing chamber” in which a particle generation source is removed from the surface of a member in a processing chamber of a substrate processing apparatus. In Patent Document 1, in order to clean a member in the processing chamber, gas is introduced into the processing chamber, and a gas shock wave reaches the member in the processing chamber to remove the particle generation source.

  In Patent Document 1, since the gas shock wave reaches the member in the processing chamber, the effect of removing the particle generation source can be enhanced as compared with the case where the gas shock wave is not reached.

  However, the particle generation source is not only deposited on the members in the processing chamber. Particle generation sources are also accumulated in the gas piping for sending the processing gas used for substrate processing into the processing chamber.

  In order to remove the particle generation source accumulated in the gas pipe, a so-called “cycle purge” that repeats supply and stop of the purge gas to the inside of the gas pipe is effective.

JP 2011-97068 A

  However, in the “cycle purge”, removal of the particle generation source takes time, and the throughput of the substrate processing apparatus is reduced.

  The present invention implements a gas supply system cleaning method and a gas supply system cleaning method capable of cleaning a gas supply system of a substrate processing apparatus while suppressing a decrease in throughput of the substrate processing apparatus. A possible substrate processing apparatus is provided.

A gas supply system cleaning method according to a first aspect of the present invention includes a processing chamber that performs processing on an object to be processed, a purge gas supply source that supplies a purge gas, and a gas pipe that connects the purge gas supply source to the processing chamber. And a gas supply system of a substrate processing apparatus, which is connected to the gas pipe and generates a processing gas used for processing, and an exhaust device capable of exhausting the gas pipe. (1) a step of operating the purge gas supply source and the exhaust device; and (2) a first valve provided on the purge gas supply source side of the gas pipe. Closing and opening the second valve provided on the exhaust device side; (3) opening both the first valve and the second valve; and (4) the first valve. With the valve open, the first And (5) opening both the first valve and the second valve, and the steps (2) to (5) are designed. repeatedly have line to the number of times, the flow rate of the purge gas from the purge gas supply source, when closing the second valve, the flow rate to generate a shock wave in the interior of the gas pipe.

  A gas supply system cleaning method according to a second aspect of the present invention is a gas supply system cleaning method for cleaning a gas supply system of a substrate processing apparatus, and (1) in a gas pipe of the gas supply system. A step of generating an abrupt purge gas flow toward the downstream and removing the adhering matter in the pipe adhering to the inside of the gas pipe using the abrupt purge gas flow; and (2) in the gas pipe of the gas supply system Generating a shock wave upstream and crushing the deposit in the pipe that could not be removed in the step (1) using the shock wave; and (3) downstream in the gas pipe of the gas supply system. And a step of discharging the particles scattered inside the gas pipe by the step (1), and the steps (1) to (3) are designed. Repeat as many times as necessary.

  A substrate processing apparatus according to a third aspect of the present invention includes a processing chamber that performs processing on an object to be processed, a purge gas supply source that supplies a purge gas, a gas pipe that connects the purge gas supply source to the processing chamber, A gas generation unit for generating a processing gas used for processing, connected to the gas piping, a first valve provided on the purge gas supply source side of the gas piping, and the processing chamber side of the gas piping A second valve provided on the exhaust pipe, an exhaust device capable of exhausting the inside of the gas pipe, the purge gas supply source, the first valve, the second valve, and the exhaust device. A controller, and the controller performs the gas supply system cleaning method according to the first aspect, the purge gas supply source, the first valve, the second valve, and To control the serial exhaust system.

  According to the present invention, the gas supply system cleaning method and the gas supply system cleaning method capable of cleaning the gas supply system of the substrate processing apparatus while suppressing a decrease in the throughput of the substrate processing apparatus are implemented. The substrate processing apparatus which can be provided can be provided.

Sectional drawing which shows roughly an example of the substrate processing apparatus which can implement the gas supply system cleaning method which concerns on one Embodiment of this invention System diagram showing one configuration example of gas supply system The flowchart which shows an example of the gas supply system cleaning method which concerns on one Embodiment of this invention The figure which shows the opening-and-closing state of the valve | bulb by an example of the gas supply system cleaning method which concerns on one Embodiment of this invention The figure which shows the opening-and-closing state of the valve | bulb by an example of the gas supply system cleaning method which concerns on one Embodiment of this invention The figure which shows the opening-and-closing state of the valve | bulb by an example of the gas supply system cleaning method which concerns on one Embodiment of this invention The figure which shows the opening-and-closing state of the valve | bulb by an example of the gas supply system cleaning method which concerns on one Embodiment of this invention The figure which shows the mode in the gas piping in step 2 typically The figure which shows the mode in the gas piping in step 3 typically The figure which shows typically the mode in the gas piping in step 4 The figure which shows typically the mode in the gas piping in step 5 Diagram showing the number of particles on a silicon wafer Diagram showing the relationship between pressure in the processing chamber and time The figure which shows schematically the substrate processing apparatus which concerns on the 2nd modification of this invention. The system figure which shows the 1st example of the gas supply mechanism which concerns on the 3rd modification of this invention. The system figure which shows the 2nd example of the gas supply mechanism which concerns on the 3rd modification of this invention. System diagram showing a third example of a gas supply mechanism according to a third modification of the present invention.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that common parts are denoted by common reference numerals throughout the drawings.

(Substrate processing equipment)
First, an example of a substrate processing apparatus capable of carrying out a gas supply system cleaning method according to an embodiment of the present invention will be described.

  FIG. 1 is a cross-sectional view schematically showing an example of a substrate processing apparatus capable of performing a gas supply system cleaning method according to an embodiment of the present invention.

  As shown in FIG. 1, a substrate processing apparatus according to an example is a polymer film forming apparatus 100 that forms a polymer film using a vapor deposition polymerization method. The polymer film forming apparatus 100 of this example is configured as a vertical batch type film forming apparatus that performs a film forming process by stacking a plurality of objects to be processed in a height direction on a boat. The polymer film forming apparatus 100 includes a cylindrical outer tube 101 with a ceiling, and a cylindrical inner tube 102 with a ceiling provided inside the outer tube 101. The outer tube 101 and the inner tube 102 are made of, for example, quartz, and a plurality of objects to be processed, for example, silicon wafers W are accommodated inside the inner tube 102, and the plurality of silicon wafers W accommodated in a lump. Thus, the processing chamber 103 for performing the film forming process of the polymer film is provided. In this example, as the polymer film, for example, a polyimide film is formed on the surface to be processed of the silicon wafer W by vapor deposition polymerization.

  One side wall of the inner tube 102 is provided with an injector 104 that extends, for example, vertically in the height direction as a gas introduction part for introducing a film forming process gas into the process chamber 103. Inside the injector 104, a premix space 105, which is a gas diffusion space, is provided. The premix space 105 is connected to the gas supply mechanism 200.

The gas supply mechanism 200 of this example includes a purge gas supply source 201 that supplies a purge gas that is an inert gas, for example. The purge gas supply source 201 is connected to the processing chamber 103 via gas pipes 202a to 202c. A flow rate controller 203a and a gas generator 204a are connected to the gas pipe 202a in order from the purge gas supply source 201 side. Similarly, a flow rate controller 203b and a gas generation unit 204b are connected to the gas pipe 202b in order from the purge gas supply source 201 side. In this example, the purge gas supplied from the purge gas supply source 201 also serves as a carrier gas that conveys the gas generated by the gas generation units 204a and 204b. An example of a purge gas that can also be used as a carrier gas is nitrogen (N ₂ ) gas. Of the gas pipes 202a and 202b, portions located at the rear stage of the gas generation units 204a and 204b are connected to gas supply units 109a and 109b provided through the side wall of the manifold 116. Each of the gas supply units 109 a and 109 b is in communication with a premix space 105 provided in the injector 104. By connecting the gas pipes 202a and 202b to the gas supply sections 109a and 109b, the gas generated in the gas generation sections 204a and 204b is put on a carrier gas (in this example, a purge gas), and is placed inside the premix space 105. It is possible to supply.

  The gas pipe 202c is connected with a flow rate controller 203c and a valve 205 for opening and closing the gas flow rate in order from the purge gas supply source 201 side. A portion of the gas pipe 202c located at the rear stage of the valve 205 is connected to the supply nozzle 109c. The supply nozzle 109 c is made of, for example, a quartz tube and is provided so as to penetrate the side wall of the manifold 116. The supply nozzle 109c is bent in the height direction in the inner space of the manifold 116, and extends vertically. The purge gas supplied from the purge gas supply source 201 is supplied into the processing chamber 103 via the supply nozzle 109c.

  The gas generation unit 204a generates a gas generated by, for example, heating and vaporizing the monomer A that is the first monomer. Similarly, the gas generation unit 204b generates a gas generated by, for example, heating and vaporizing the monomer B as the second monomer. An example of monomer A is pyromellitic dianhydride, and an example of monomer B is oxydianiline. The vaporized monomer A and monomer B are premixed in the premix space 105 and discharged into the processing chamber 103 through, for example, a horizontal direction through a plurality of discharge holes 110 provided in the injector 104. The polymer film forming apparatus 100 polymerizes a pyromellitic dianhydride gas and an oxydianiline gas to thereby polymerize a polyimide film into a processing surface of a silicon wafer W accommodated in the processing chamber 103. A film is formed on top.

  A plurality of exhaust ports 111 are formed on the side wall of the inner tube 102 facing the injector 104. Each of the plurality of exhaust ports 111 communicates with a space defined by the outer tube 101 and the inner tube 102. The space functions as an exhaust space 112, and the exhaust space 112 is connected to an exhaust mechanism 114 that exhausts the inside of the processing chamber 103 through an exhaust pipe 113. The exhaust mechanism 114 includes an exhaust device 115 such as a vacuum pump, for example, exhausts the inside of the processing chamber 103, and sets the pressure inside the processing chamber 103 to a pressure required for processing.

  The open side end (lower end side) of the outer tube 101 is connected to a manifold 116 formed of, for example, stainless steel in a cylindrical shape via a seal member 117 such as an O-ring. The manifold 116 supports the lower end side of the outer tube 101. The open end of the inner tube 102 is connected to, for example, an inner tube support 118 provided in a collar shape around the inside of the manifold 116.

  From below the manifold 116, a boat 150 on which a plurality of objects to be processed, for example, silicon wafers W can be placed in multiple stages, can be inserted into the processing chamber 103 via the inside of the inner tube support portion 118. . The boat 150 is made of quartz and has a plurality of support columns 151. A plurality of grooves 152 are formed in the support columns 151, and the plurality of silicon wafers W are supported by the plurality of grooves 152.

  The boat 150 is placed on the table 120 via a quartz heat insulating cylinder 119. The table 120 is supported on a rotating shaft 122 that opens and closes an opening on the lower end side of the manifold 116 and penetrates a lid 121 made of, for example, stainless steel. For example, a magnetic fluid seal 123 is provided in a through portion of the lid 121 through which the rotation shaft 122 passes, and supports the rotation shaft 122 so as to be rotatable while hermetically sealing. Between the peripheral part of the lid part 121 and the lower end of the manifold 116, for example, a seal member 124 made of an O-ring is interposed. Thereby, the sealing property in the processing chamber 103 is maintained. The rotating shaft 122 is attached to the tip of an arm 125 supported by an elevating mechanism (not shown) such as a boat elevator, for example. As a result, the boat 150, the lid 121, and the like are integrally moved up and down and inserted into and removed from the processing chamber 103.

  A heating device 130 is provided around the outer periphery of the outer tube 101 so as to surround the outer tube 101. The heating device 130 heats the plurality of silicon wafers W accommodated in the processing chamber 103.

  A controller 300 is connected to the polymer film forming apparatus 100. The control unit 300 includes a process controller 301 including, for example, a microprocessor (computer), and the process controller 301 controls each component of the polymer film forming apparatus 100. A user interface 302 and a storage unit 303 are connected to the process controller 301.

  The user interface 302 visualizes the operating state of the polymer film forming apparatus 100, and an input unit including a touch panel display and a keyboard for an operator to input commands to manage the polymer film forming apparatus 100, etc. A display unit including a display for displaying the display.

  The storage unit 303 includes a control program for realizing various processes such as a film forming process and a cleaning process executed by the polymer film forming apparatus 100 under the control of the process controller 301, and each component of the polymer film forming apparatus 100. The section stores a so-called process recipe including a program for executing processing according to processing conditions. The process recipe is stored in a storage medium in the storage unit 303. The storage medium may be a hard disk or a semiconductor memory, or a portable medium such as a CD-ROM, DVD, or flash memory. Further, the process recipe may be appropriately transmitted from another apparatus via, for example, a dedicated line.

  The process recipe is read from the storage unit 303 as required by an operator instruction from the user interface 302, and the process controller 301 executes a process according to the read process recipe, so that the polymer film formation is performed. The film apparatus 100 executes the requested process under the control of the process controller 301.

(One configuration example of gas supply system)
FIG. 2 is a system diagram showing a configuration example of the gas supply system. FIG. 2 particularly shows a portion of a gas supply system that supplies a gas used for the film forming process.

  As shown in FIG. 2, the gas pipes 202a and 202b of the gas supply system of the polymer film forming apparatus 100 are respectively provided with first valves 206a and 206b provided on the purge gas supply source 201 side and on the exhaust device 115 side. The provided second valves 207a and 207b are provided.

  The gas generator 204a is connected between the first valve 206a and the second valve 207a. The gas generation unit 204a includes a raw material tank 208a that stores the monomer A. In the raw material tank 208a, for example, monomer A dissolved in a liquid or solvent is stored. The monomer A accommodated in the raw material tank 208a is heated and vaporized by a heater 209a provided around the raw material tank 208a. The gas introduction part of the raw material tank 208a is connected to the gas pipe 202a on the first valve 206a side via the valve 210a. The gas discharge part of the raw material tank 208a is connected to the gas pipe 202a on the second valve 207a side via the valve 211a. The gas introduction side of the valve 210a and the gas discharge side of the valve 211a are connected to each other by a valve 212a that functions as a bypass valve.

  At the time of gas supply, the first valve 206a and the second valve 207a are opened, and the bypass valve 212a is closed. Further, the valves 210a and 211a are opened. In this state, when the purge gas is supplied from the purge gas supply source 201 toward the gas pipe 202a, the purge gas is introduced into the raw material tank 208a as a carrier gas. The monomer A vaporized in the raw material tank 208a is discharged from the raw material tank 208a on the carrier gas and is fed into the processing chamber 103 through the gas pipe 202a and the second valve 207a. .

  As shown in FIG. 2, the configuration on the gas generation unit 204b side is the same as the configuration on the gas generation unit 204a side. Therefore, the description of the configuration on the gas generation unit 204b side will be omitted by adding the symbol “b” to the end of the reference symbol.

(Gas supply system cleaning method)
Next, an example of a gas supply system cleaning method according to an embodiment of the present invention will be described.

  FIG. 3 is a flow chart showing an example of a gas supply system cleaning method according to an embodiment of the present invention, and FIGS. FIG. 4A to 4D show only the gas supply system for supplying the monomer A among the gas supply systems.

First, as shown in Step 1 in FIG. 3, the purge gas supply source 201 and the exhaust device 115 are operated. At this time, the open / close state of the valve is set as follows.
First valve 206a “open” (purge gas supply side)
Second valve 207a “open” (exhaust device side)
Valve 210a “Closed” (raw material tank introduction side)
Valve 211a “Closed” (raw material tank discharge side)
Valve 212a “open” (raw material tank bypass)
By setting the valve as described above, a purge gas flow from the purge gas supply source 201 toward the exhaust device 115 is created inside the gas pipe 202a.

  Next, as shown in Step 2 in FIG. 3 and FIG. 4A, the first valve 206a provided on the purge gas supply source 201 side of the gas pipe 202a is closed, and the second valve provided on the exhaust device 115 side is closed. Open the valve 207a. Thereby, the flow of the purge gas inside the gas pipe 202a is shut off by closing the first valve 206a. A portion of the gas pipe 202a that is in a stage subsequent to the first valve 206a is exhausted by the exhaust device 115 through the inside of the processing chamber 103, and enters the inside of the gas pipe 202a with the first valve 206a as a boundary. Causes a pressure difference that is high pressure upstream of the first valve 206a and low pressure downstream.

  Next, as shown in Step 3 and FIG. 4B in FIG. 3, both the first valve 206a and the second valve 207a are opened. This creates a purge gas flow from the purge gas supply source 201 toward the exhaust device 115 inside the gas pipe 202a. At this time, because of the pressure difference that is high pressure upstream of the first valve 206a and low pressure downstream, the sudden purge gas toward the exhaust device 115, that is, downstream, at the moment when the first valve 206a is opened. Flow occurs.

  Next, as shown in Step 4 and FIG. 4C in FIG. 3, the second valve 207a is closed while the first valve 206a is open. Thereby, the flow of the purge gas inside the gas pipe 202a is shut off by closing the second valve 207a.

  Next, as shown in Step 5 in FIG. 3 and FIG. 4D, both the first valve 206a and the second valve 207a are opened. As a result, a purge gas flow from the purge gas supply source 201 toward the exhaust device 115 is created again in the gas pipe 202a.

  Next, as shown in step 6 in FIG. 3, it is determined whether or not the cycle consisting of steps 2 to 5 has reached the set number of times. When it is determined that the set number of times has not been reached (No), the process returns to Step 2 and Steps 2 to 5 are repeated sequentially. If it is determined that the set number of times has been reached (Yes), the process proceeds to step 7, where the purge gas supply source 201 and the exhaust device 115 are stopped, and the gas supply system cleaning method according to one embodiment of the present invention is completed. .

  5A to 5D are diagrams schematically illustrating the inside of the gas pipe in Step 2 to Step 5.

  According to the gas supply system cleaning method according to one embodiment, first, as shown in FIGS. 5A and 5B, a rapid purge gas flow is generated in the gas pipe 202a from step 2 to step 3. Then, as shown in FIG. 5C, the flow of the purge gas is shut off in step 4. At this time, by closing the second valve 207a, the purge gas flowing in the gas pipe 202a is rapidly compressed before the second valve 207a, and the first valve 206a side has a low pressure and a second valve. A pressure difference that is high on the 207a side temporarily occurs. Due to this pressure difference, a shock wave is generated in the gas pipe 202a from the second valve 207a to the first valve 206a, that is, upstream. Note that the flow rate of the purge gas from the purge gas supply source 201 is a flow rate that generates a shock wave in the gas pipe 202a when the second valve 207a is closed.

  By generating such a shock wave, it is possible to remove the particle generation source, that is, the in-pipe deposit 213, which could not be removed only by the rapid purge gas flow generated at the moment when the first valve 206a is opened. . The removed in-pipe deposits 213 are scattered as fine particles in the gas pipe 202a. The scattered particles can be discharged by exhausting the inside of the gas pipe 202a in step 5, as shown in FIG. 5D.

Thus, in the gas supply system cleaning method according to an embodiment of the present invention,
(1) Step 2 to Step 3
・ Generation of a rapid purge gas flow toward the downstream ・ Removal of the deposit 213 in the pipe using the rapid purge gas flow
(2) Step 4
・ Generation of shock waves going upstream ・ Removal of deposit 213 in the tube using shock waves
(3) Step 5
・ Generation of a purge gas flow toward the downstream ・ Pipe deposits 213 are removed using a cleaning process that differs in the method of discharging particles in the gas pipe. Furthermore, such a method repeats different cleaning processes (1) to (3) until a set number of times is reached. For this reason, compared with the case where only the cleaning process (1) is repeated, the in-pipe deposit 213 can be more efficiently removed. As a result of the more efficient removal of the in-pipe deposits 213, the cleanliness of the gas supply system can be increased to the required level in a shorter time. Therefore, the cleaning process of the gas supply system can be completed in a shorter time, the maintenance time that does not contribute to the substrate processing and the like can be shortened, and the decrease in the throughput of the substrate processing apparatus can be suppressed.

  FIG. 6 is a diagram showing the number of particles on the silicon wafer. FIG. 6 shows how many particles are formed on the silicon wafer W accommodated in the processing chamber 103 when the cleaning method according to the comparative example is performed and when the cleaning method according to the embodiment is performed. The result of examining whether it adheres is shown. A comparative example is a case where steps 2 and 3 are repeated as cleaning of the gas supply system, and one embodiment is a case where steps 2 to 5 are repeated. Note that the cleaning time was set to be substantially the same in both the comparative example and the embodiment.

  As shown in FIG. 6, in the comparative example, about 550 particles adhered to the silicon wafer W, whereas in one embodiment, the number is reduced to about 120. As described above, according to one embodiment, the particles brought into the processing chamber 103 from the gas pipes 202a and 202b can be reduced in a shorter time compared to the comparative example.

  Therefore, according to the gas supply system cleaning method according to the embodiment, the gas supply system cleaning method capable of cleaning the gas supply system of the substrate processing apparatus while suppressing a decrease in the throughput of the substrate processing apparatus. Can provide. Moreover, the substrate processing apparatus which can implement such a gas supply system cleaning method can be provided.

(First modification)
Next, a first modification of the gas supply system cleaning method according to an embodiment of the present invention will be described. The first modification relates to the temperature setting inside the processing chamber 103 when the gas supply system is being cleaned.

  FIG. 7 is a diagram illustrating the relationship between the pressure in the processing chamber and time. FIG. 7 shows a case where the temperature inside the processing chamber 103 is set to 150 ° C. and a case where the temperature is set to 275 ° C. when the gas supply system is being cleaned. The temperature of 150 ° C. represents the temperature of the substrate processing performed in the processing chamber 103, in this example, the temperature near the film forming temperature of the polymer film, and the temperature of 275 ° C. represents the temperature equal to or higher than the film forming temperature of the polymer film. Yes.

  As shown in FIG. 7, when the temperature inside the processing chamber 103 is set to 275 ° C., the pressure in the processing chamber 103 can be lowered to a lower pressure. For example, the time required to lower the pressure in the processing chamber 103 to 0.004 Torr took about 48 minutes when the temperature was set to 150 ° C., but it took about 12 minutes when the temperature was set to 275 ° C. . Furthermore, when the temperature is set to 275 ° C., the pressure in the processing chamber 103 can be reduced to 0.002 Torr in about 42 minutes.

  This tendency indicates whether there are many or few particles toward the exhaust device 115. In the gas supply system cleaning method according to an embodiment, a large amount of particles are brought into the processing chamber 103 from the gas supply system at a time. For this reason, the possibility that particles reattach to the inner wall of the processing chamber 103 increases. When the reattached particles are peeled off, new particles are generated in the processing chamber 103.

  When the pressure in the processing chamber 103 is difficult to decrease, it can be considered that many particles are sent toward the exhaust device 115. That is, it can be considered that particles are generated from the inner wall of the processing chamber 103. If there are many particles heading toward the exhaust device 115, the exhaust capability of the exhaust device 115 decreases. When the exhaust capacity decreases, the pressure in the processing chamber 103 is difficult to decrease.

  On the other hand, when the pressure in the processing chamber 103 is likely to decrease, it can be considered that the number of particles directed to the exhaust device 115 is small, and the decrease in the exhaust capability of the exhaust device 115 is suppressed.

  Thus, when cleaning the gas supply system, if the temperature inside the processing chamber 103 is set to be equal to or higher than the substrate processing temperature, the reattachment of particles to the inner wall of the processing chamber 103 can be suppressed. In addition, the cleanliness inside the processing chamber 103 can be increased.

(Second modification)
In the first modified example, it has been described that in the gas supply system cleaning method according to an embodiment, more particles are brought into the processing chamber 103 from the gas pipes 202a and 202b at a time. The particles brought into the processing chamber 103 are exhausted by the exhaust device 115, but when the particles are sucked into the exhaust device 115, the exhaust capability of the exhaust device 115 itself begins to deteriorate. For this reason, periodic maintenance of the exhaust device 115 is required. The second modification is intended to reduce the number of particles sucked into the exhaust device 115 and suppress a decrease in exhaust capability of the exhaust device 115 itself.

  FIG. 8 is a diagram schematically showing a substrate processing apparatus according to a second modification of the present invention.

  As shown in FIG. 8, in the substrate processing apparatus 100 a according to the second modification, a cold trap 251 is provided in the exhaust pipe 250 that connects the exhaust apparatus 115 to the processing chamber 103.

  The cold trap 251 collects particles that flow into the exhaust pipe 250. By providing the cold trap 251 in the preceding stage of the exhaust device 115 in this way, the number of particles sucked into the exhaust device 115 can be reduced, and a reduction in exhaust capability of the exhaust device 115 itself can be suppressed. It becomes possible.

(Third Modification)
In one embodiment, the purge gas supplied from the purge gas supply source 201 is also used as a carrier gas for carrying the monomer A and the monomer B. However, the present invention is not limited to such a gas supply mechanism. The third modification relates to a modification of the gas supply mechanism.

  9A to 9C are views showing first to third examples of a gas supply mechanism according to a third modification.

<First example>
As shown in FIG. 9A, the gas supply mechanism 200a according to the first example is the same as the embodiment in that the purge gas is also used as the carrier gas, but in addition to the purge gas supply source 201 for normal processing, The difference is that a purge gas supply source 201a for processing is provided.

Thus, in addition to the purge gas supply source 201 for normal processing, a purge gas supply source 201a for cleaning processing may be provided. According to such a gas supply mechanism 200a according to the first example, for example, nitrogen (N ₂ ) gas is used as the purge gas for normal processing, and for example, hydrogen other than nitrogen gas is used as the purge gas for cleaning processing. (H ₂ ) gas, argon (Ar) gas, or the like can be used.

<Second example>
As shown in FIG. 9B, the supply mechanism 200b according to the second example is one in which the purge gas supply source 201 and the carrier gas supply source 201b are made independent. Also in the second example, the purge gas and the carrier gas can be different from each other.

  In the second example, the carrier gas supplied from the carrier gas supply source 201b is used for cleaning the gas supply system.

<Third example>
As shown in FIG. 9C, the supply mechanism 200c according to the third example is the same as the second example, except that the purge gas supply source 201 and the carrier gas supply source 201b are independent. The purge gas supply source 201a for cleaning is different.

  As shown in such a gas supply mechanism 200c, the gas supply mechanism has a purge gas supply source 201 for normal processing, a purge gas supply source 201a for cleaning processing, and a carrier gas supply source 201b independently. It may be.

  As mentioned above, although this invention was demonstrated according to one Embodiment and the 1st-3rd modification, this invention is not limited to the said 1st Embodiment or the 1st-3rd modification, The Various modifications can be made without departing from the spirit of the invention.

  For example, in the above embodiment, a polymer film forming apparatus that forms a polymer film is exemplified as the substrate processing apparatus. However, the present invention may be applied to a film forming apparatus other than the polymer film forming apparatus. Is possible.

  In the above-described embodiment, the gas supply system cleaning method is exemplified by the case where the gas pipe 202a is cleaned out of the gas pipes 202a and 202b. The gas supply system cleaning method according to the embodiment can be used. Furthermore, it is possible to simultaneously clean, for example, both the gas pipes 202a and 202b that exist in a plurality of systems. If both the gas pipes 202a and 202b are cleaned at the same time, the time required for cleaning the gas supply system can be further shortened.

  In addition, the present invention can be variously modified without departing from the gist thereof.

W ... silicon wafer, 100 ... polymer film deposition apparatus, 103 ... processing chamber, 111 ... exhaust port, 112 ... exhaust space, 113 ... exhaust pipe, 114 ... exhaust mechanism, 115 ... exhaust apparatus, 130 ... heating apparatus, 200 ... Gas supply mechanism, 201: purge gas supply source, 202a, 202b, 202c ... gas piping, 203a, 203b, 203c ... flow rate controller, 204a, 204b ... gas generation unit, 205 ... valve.

Claims (9)

A processing chamber for processing the object to be processed;
A purge gas supply source for supplying the purge gas;
A gas pipe connecting the purge gas supply source to the processing chamber;
A gas generating unit for generating a processing gas used for processing, connected to the gas pipe;
A gas supply system cleaning method for cleaning a gas supply system of a substrate processing apparatus provided with an exhaust device capable of exhausting the gas pipe,
(1) operating the purge gas supply source and the exhaust device;
(2) closing a first valve provided on the purge gas supply source side of the gas pipe and opening a second valve provided on the exhaust device side;
(3) opening both the first valve and the second valve;
(4) closing the second valve while keeping the first valve open;
(5) opening both the first valve and the second valve;
Comprising
Wherein (2) from said step up (5) step, have repeated rows up to the number of times that has been designed,
2. A gas supply system cleaning method according to claim 1, wherein the flow rate of the purge gas from the purge gas supply source is a flow rate at which a shock wave is generated inside the gas pipe when the second valve is closed . The exhaust device is connected to the processing chamber;
The gas supply system cleaning method according to claim 1 , wherein the gas pipe is exhausted through the processing chamber. A cold trap is provided in an exhaust pipe connecting the exhaust device to the processing chamber,
Wherein during (2) from step (5) step, the particles contained in the gas coming exhausted from the processing chamber, to claim 1 or claim 2, characterized in that trapped in the cold trap The gas supply system cleaning method as described. A heating device capable of heating the inside of the processing chamber;
The said heating apparatus makes the temperature inside the said process chamber more than the process temperature in the case of the said to-be-processed object process from the said (2) process to the said (5) process. The gas supply system cleaning method according to claim 3 . The gas supply system cleaning method according to any one of claims 1 to 4 , wherein the purge gas also serves as a carrier gas for transporting a gas generated by the gas generation unit. The gas supply system cleaning method according to any one of claims 1 to 5 , wherein the processing gas generated in the gas generation unit is a monomer gas. A gas supply system cleaning method for cleaning a gas supply system of a substrate processing apparatus,
(1) A step of generating a rapid purge gas flow downstream in the gas pipe of the gas supply system, and using the rapid purge gas flow to remove deposits adhered to the inside of the gas pipe; ,
(2) A step of generating a shock wave upstream in the gas pipe of the gas supply system, and crushing the deposit in the pipe that could not be removed in the step (1) using the shock wave;
(3) generating a purge gas flow downstream in the gas pipe of the gas supply system, and discharging particles scattered in the gas pipe by the step (1);
Comprising
A gas supply system cleaning method, wherein the steps (1) to (3) are repeated up to a designed number of times. A processing chamber for processing the object to be processed;
A purge gas supply source for supplying the purge gas;
A gas pipe connecting the purge gas supply source to the processing chamber;
A gas generating unit for generating a processing gas used for processing, connected to the gas pipe;
A first valve provided on the purge gas supply source side of the gas pipe;
A second valve provided on the processing chamber side of the gas pipe;
An exhaust device capable of exhausting the inside of the gas pipe;
A controller for controlling the purge gas supply source, the first valve, the second valve, and the exhaust device,
The purge gas supply source, the first valve, the second valve, and so that the controller performs the gas supply system cleaning method according to any one of claims 1 to 7. A substrate processing apparatus for controlling the exhaust apparatus. An exhaust pipe connecting the exhaust device to the processing chamber;
A cold trap connected to the exhaust pipe for collecting particles flowing in the exhaust pipe;
The substrate processing apparatus according to claim 8 , further comprising:

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