JP2007227501A - Cleaning method of semiconductor production equipment and semiconductor production equipment with cleaning function - Google Patents

Cleaning method of semiconductor production equipment and semiconductor production equipment with cleaning function Download PDF

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JP2007227501A
JP2007227501A JP2006044880A JP2006044880A JP2007227501A JP 2007227501 A JP2007227501 A JP 2007227501A JP 2006044880 A JP2006044880 A JP 2006044880A JP 2006044880 A JP2006044880 A JP 2006044880A JP 2007227501 A JP2007227501 A JP 2007227501A
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Kimiko Takahashi
公子 高橋
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Fujitsu Ltd
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<P>PROBLEM TO BE SOLVED: To provide a cleaning method of semiconductor production equipment in which adhering matters in the equipment can be removed effectively without utilizing reactive gas. <P>SOLUTION: In the cleaning method of semiconductor production equipment performing a predetermined production processing by supplying reactive gas into a chamber 10, matters adhering in the chamber are removed by exhausting the chamber 10 while supplying first inert gas heated at a first temperature and pressurized at a predetermined pressure, and second inert gas cooled to a second temperature lower than the first temperature and pressurized at a predetermined pressure alternately into the chamber. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は，半導体製造装置のクリーニング方法及びクリーニング機能付き半導体製造装置に関し，特に，装置内に形成された付着物などを有効に除去することができるクリーニング方法とそれを行うことができる装置に関する。   The present invention relates to a semiconductor manufacturing apparatus cleaning method and a semiconductor manufacturing apparatus with a cleaning function, and more particularly to a cleaning method capable of effectively removing deposits and the like formed in the apparatus and an apparatus capable of performing the cleaning method.

半導体製造装置には，反応ガスを導入して被エッチング物質をエッチングするエッチング装置や，反応ガスを導入して薄膜を生成するＣＶＤ装置などの薄膜形成装置などがある。これらの装置は，いずれも反応性ガスを導入し所定の処理を行う装置である。長期にわたり使用することで，反応性ガスによる反応生成物が装置の内面に付着する。かかる付着物は，各処理中に剥離しウエハ上に落下する。この落下した付着物によりエッチングが阻害されたり生成膜のピンホールの原因になったりする。したがって，付着物を除去するクリーニング工程が必要になる。   Semiconductor manufacturing apparatuses include an etching apparatus that introduces a reaction gas to etch a material to be etched, and a thin film forming apparatus such as a CVD apparatus that introduces a reaction gas to generate a thin film. All of these apparatuses are apparatuses that introduce a reactive gas and perform a predetermined treatment. When used for a long time, the reaction product of the reactive gas adheres to the inner surface of the apparatus. Such deposits peel off during each process and fall on the wafer. Etching is hindered by the fallen deposits or causes pinholes in the formed film. Therefore, a cleaning process for removing the deposits is necessary.

従来のクリーニング方法では，例えばフッ素系ガスを導入して付着物と化学反応を生じさせ排気と共に除去することが行われている。例えば，特許文献１には，クリーニングガスＣｌＦ3と不活性ガスＮ2とを所定の割合で装置内に導入して，付着物を除去することが記載されている。 In a conventional cleaning method, for example, a fluorine-based gas is introduced to cause a chemical reaction with a deposit and removed together with exhaust gas. For example, Patent Document 1 describes that a cleaning gas ClF 3 and an inert gas N 2 are introduced into the apparatus at a predetermined ratio to remove deposits.

同様に，特許文献２には，装置壁面を冷却して５０℃以下に保持した状態でクリーニングガスＣｌＦ3を装置内に導入して内壁に付着した付着物をクリーニングすることが記載されている。 Similarly, Patent Document 2 describes that a cleaning gas ClF 3 is introduced into the apparatus while the apparatus wall surface is cooled and kept at 50 ° C. or less to clean the deposits adhering to the inner wall.

さらに，特許文献３には，特殊な貫通孔を有する筒状のクリーニングガス供給手段からクリーニングガスＣｌＦ3を装置内に導入して内壁の付着物をクリーニングすることが記載されている。 Further, Patent Document 3 describes that cleaning gas ClF 3 is introduced into the apparatus from a cylindrical cleaning gas supply means having a special through hole to clean the deposits on the inner wall.

また，特許文献４には，ドライエッチング装置の異物除去方法として，高温の水蒸気を装置内に導入して，浮遊している異物を固化または液化させ，落下するのを排気手段により装置外に除去することが記載されている。
特開平８−２０９３５０号公報（１９９６年８月１３日公開） 特開平７−８６１７１号公報（１９９５年３月３１日公開） 特開平７−２４９５８５号公報（１９９５年９月２６日公開） 特開平１１−５４４８５号公報（１９９９年２月２６日公開） In Patent Document 4, as a method for removing foreign matter in a dry etching apparatus, high-temperature water vapor is introduced into the apparatus to solidify or liquefy floating foreign matters, and the falling is removed from the apparatus by an exhaust means. It is described to do.
JP-A-8-209350 (released on August 13, 1996) JP 7-86171 A (published March 31, 1995) JP 7-249585 A (published September 26, 1995) JP 11-54485 A (published February 26, 1999)

しかしながら，従来のクリーニングガスを利用したクリーニング方法では，フッ素系のガスを使用する必要があり環境上好ましくない。また，特許文献４のように高温のガスをブローして付着物を除去するクリーニング装置が商品化されているが，除去効果は十分でなく，エッチング装置などで付着物が落下してエッチング不良を起こして，歩留まり低下の原因になっている。   However, the conventional cleaning method using a cleaning gas requires the use of a fluorine-based gas, which is not environmentally preferable. In addition, as in Patent Document 4, a cleaning device that blows high-temperature gas to remove deposits is commercialized, but the removal effect is not sufficient, and deposits fall in an etching device or the like to cause etching defects. This causes a decrease in yield.

そこで，本発明の目的は，反応性ガスを利用することなく，装置内の付着物を有効に除去することができる半導体製造装置のクリーニング方法及びそれを行うことができる装置を提供することにある。   SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor manufacturing apparatus cleaning method capable of effectively removing deposits in an apparatus without using a reactive gas, and an apparatus capable of performing the same. .

上記目的を達成するために，本発明の第１の側面によれば，反応性ガスをチャンバー内に供給して所定の製造処理を行う半導体製造装置のクリーニング方法において，第１の温度に加熱され所定の圧力に加圧された第１の不活性ガスと，前記第１の温度より低い第２の温度に冷却され所定の圧力に加圧された第２の不活性ガスとを交互に前記チャンバー内に供給しながら，前記チャンバーを排気して前記チャンバー内に付着した付着物を除去することを特徴とする。   In order to achieve the above object, according to a first aspect of the present invention, in a cleaning method for a semiconductor manufacturing apparatus in which a reactive gas is supplied into a chamber and a predetermined manufacturing process is performed, the semiconductor device is heated to a first temperature. The chamber is alternately provided with a first inert gas pressurized to a predetermined pressure and a second inert gas cooled to a second temperature lower than the first temperature and pressurized to a predetermined pressure. While being supplied into the chamber, the chamber is evacuated to remove deposits attached to the chamber.

上記目的を達成するために，本発明の第２の側面によれば，反応性ガスをチャンバー内に供給して所定の製造処理を行う半導体製造装置において，不活性ガスが供給され当該不活性ガスを第１の温度に加熱する加熱手段と，前記不活性ガスが供給され当該不活性ガスを第１の温度より低い第２の温度に冷却する冷却手段と，前記加熱手段及び冷却手段で加熱または冷却された不活性ガスを所定の圧力に加圧する加圧手段とを有し，前記加圧手段で加圧された第１の温度の不活性ガスと第２の温度の不活性ガスとが交互に前記チャンバー内に供給されながら，前記チャンバーが排気されることを特徴とする。   In order to achieve the above object, according to a second aspect of the present invention, an inert gas is supplied in a semiconductor manufacturing apparatus that performs a predetermined manufacturing process by supplying a reactive gas into a chamber. Heating means for heating the first gas to a first temperature, cooling means for supplying the inert gas to cool the inert gas to a second temperature lower than the first temperature, and heating or heating by the heating means and the cooling means. Pressurizing means for pressurizing the cooled inert gas to a predetermined pressure, and the inert gas at the first temperature and the inert gas at the second temperature pressurized by the pressurizing means alternately The chamber is evacuated while being supplied into the chamber.

上記の第１及び第２の側面において，好ましい態様によれば，前記所定の圧力は８０〜１６０Torrであり，第１の温度は４０〜１５０℃であり，第２の温度は−１０〜−２０℃である。   In the first and second aspects described above, according to a preferred embodiment, the predetermined pressure is 80 to 160 Torr, the first temperature is 40 to 150 ° C., and the second temperature is −10 to −20. ° C.

上記の本発明の側面によれば，第１の温度に加熱された不揮発性ガスと第２の温度に冷却された不活性ガスとを交互にチャンバー内に供給することで，チャンバー内壁に付着した付着物に熱ストレスが有効に加えられて剥離し，剥離した付着物が排気により除去される。よって，反応性ガスを利用することなく，チャンバー内の付着物をクリーニングすることができる。   According to the above aspect of the present invention, the non-volatile gas heated to the first temperature and the inert gas cooled to the second temperature are alternately supplied into the chamber so that they adhere to the inner wall of the chamber. Thermal deposits are effectively applied to the deposits and peel off, and the peeled deposits are removed by exhaust. Therefore, the deposits in the chamber can be cleaned without using a reactive gas.

以下，図面にしたがって本発明の実施の形態について説明する。但し，本発明の技術的範囲はこれらの実施の形態に限定されず，特許請求の範囲に記載された事項とその均等物まで及ぶものである。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the technical scope of the present invention is not limited to these embodiments, but extends to the matters described in the claims and equivalents thereof.

図１は，本実施の形態における半導体製造装置の構成図である。この半導体製造装置は，例えば，反応性ガスによりプラズマエッチング処理を行うエッチング装置や，反応性ガスを使用するＣＶＤ法などにより薄膜を成長する薄膜形成装置である。半導体ウエハが収容される処理チャンバー１０には，反応性ガス１２がバルブ３８を介して供給される。また，処理チャンバー１０には真空ポンプ１４がバルブ４０を介して取り付けられ，処理チャンバー内を所望の圧力に真空引きすることができる。また，真空ポンプ１４により排気されたガスは，排気処理手段１６により所定の処理が行われる。反応性ガス１２は，図示しないプラズマ発生手段により励起されて供給される場合もある。   FIG. 1 is a configuration diagram of a semiconductor manufacturing apparatus according to the present embodiment. This semiconductor manufacturing apparatus is, for example, an etching apparatus that performs a plasma etching process using a reactive gas, or a thin film forming apparatus that grows a thin film by a CVD method using a reactive gas. The reactive gas 12 is supplied through the valve 38 to the processing chamber 10 in which the semiconductor wafer is accommodated. A vacuum pump 14 is attached to the processing chamber 10 via a valve 40, and the inside of the processing chamber can be evacuated to a desired pressure. The gas exhausted by the vacuum pump 14 is subjected to predetermined processing by the exhaust processing means 16. The reactive gas 12 may be supplied by being excited by a plasma generating means (not shown).

以上までが，一般的なエッチング装置や薄膜形成装置の構成である。いずれにおいても，真空ポンプ１４により処理チャンバー１０内の圧力が所望の圧力に制御され，そこに反応性ガス１２が供給され，処理チャンバー１０内の半導体ウエハの表面をエッチング処理したり，薄膜形成をしたりすることが行われる。   The above is the configuration of a general etching apparatus and thin film forming apparatus. In any case, the pressure in the processing chamber 10 is controlled to a desired pressure by the vacuum pump 14, and the reactive gas 12 is supplied thereto to etch the surface of the semiconductor wafer in the processing chamber 10 or to form a thin film. Is done.

反応性ガス１２を処理チャンバー内に導入してそこで何らかの化学反応によりエッチングや薄膜形成が行われるので，長期にわたり使用継続すると，反応性ガスによる生成物が処理チャンバー１０の内壁に付着する。この付着物を有効に除去することができなければ，付着物が剥離してエッチング不良や薄膜形成不良を招くことになり，歩留まり低下を招く。この付着物は，例えば，シリコン酸化物，シリコン窒化膜，ポリシリコン，アルミニウムなどの金属材料などに加えて，レジスト材料である樹脂材料などである。   Since the reactive gas 12 is introduced into the processing chamber and etching or thin film formation is performed by some chemical reaction there, the product due to the reactive gas adheres to the inner wall of the processing chamber 10 when it is used for a long time. If this deposit cannot be removed effectively, the deposit will peel off, leading to poor etching and thin film formation, resulting in a decrease in yield. This deposit is, for example, a resin material that is a resist material in addition to a metal material such as silicon oxide, silicon nitride film, polysilicon, or aluminum.

本実施の形態では，この処理チャンバー１０に，第１の温度に加熱され所定の圧力に加圧された第１の不活性ガスと，第１の温度より低い第２の温度に冷却され所定の圧力に加圧された第２の不活性ガスとを交互に処理チャンバー１０内に供給しながら，処理チャンバー１０を排気してチャンバー内に付着した付着物を除去する。   In the present embodiment, the processing chamber 10 is cooled to a first temperature heated to a first temperature and pressurized to a predetermined pressure, and cooled to a second temperature lower than the first temperature. While the second inert gas pressurized to the pressure is alternately supplied into the processing chamber 10, the processing chamber 10 is evacuated to remove deposits attached to the chamber.

上記のクリーニング処理を行うために，ガスボンベ２０内の不活性ガスを，第１の温度，例えば４０〜１５０℃に加熱する加熱手段２２と，第２の温度，例えば−１０〜−２０℃に冷却する冷却手段２４と，加熱されたまたは冷却された不活性ガスを，所定の圧力，例えば８０〜１６０Torrに加圧する加圧手段２６とが設けられる。加圧手段２６により加圧された第１の温度のまたは第２の温度の不活性ガスが，バルブ３６を介して処理チャンバー１０に供給可能になっている。   In order to perform the above cleaning process, the inert gas in the gas cylinder 20 is cooled to a first temperature, for example, 40 to 150 ° C., and to a second temperature, for example, −10 to −20 ° C. The cooling means 24 is provided, and the pressurizing means 26 that pressurizes the heated or cooled inert gas to a predetermined pressure, for example, 80 to 160 Torr. The inert gas at the first temperature or the second temperature pressurized by the pressurizing means 26 can be supplied to the processing chamber 10 via the valve 36.

不活性ガスは，窒素Ｎ2，アルゴンＡｒ，ネオンＮｅなどであり，不活性ガスが収納されたガスボンベ２０がバルブ３０，３２，３４を介して，加熱手段２２，冷却手段２４に接続される。ガスボンベ２０の出口には，そのガス流量を制御するマスフローコントローラＭＦＣが設けられている。 The inert gas is nitrogen N 2 , argon Ar, neon Ne, or the like, and the gas cylinder 20 containing the inert gas is connected to the heating unit 22 and the cooling unit 24 via valves 30, 32, and 34. A mass flow controller MFC for controlling the gas flow rate is provided at the outlet of the gas cylinder 20.

そして，通常の処理工程では，バルブ３８を開き，バルブ３６を閉じて，処理に必要な反応性ガス１２が処理チャンバー１０に供給され，処理チャンバー１０内が真空ポンプ１４により所望の圧力に制御される。   In a normal processing step, the valve 38 is opened, the valve 36 is closed, the reactive gas 12 necessary for the processing is supplied to the processing chamber 10, and the inside of the processing chamber 10 is controlled to a desired pressure by the vacuum pump 14. The

クリーニング工程では，バルブ３８を閉じて，バルブ３６を開き，加圧された不活性ガスが処理チャンバー１０に供給される。その場合，バルブ３２，３４を交互に開閉することで，第１の温度に加熱された不活性ガスと第２の温度に冷却された不活性ガスとを，加圧手段で加圧して，処理チャンバー１０に供給することができる。   In the cleaning process, the valve 38 is closed, the valve 36 is opened, and the pressurized inert gas is supplied to the processing chamber 10. In that case, by alternately opening and closing the valves 32 and 34, the inert gas heated to the first temperature and the inert gas cooled to the second temperature are pressurized by the pressurizing means, and processing is performed. It can be supplied to the chamber 10.

図２は，本実施の形態におけるクリーニング方法の具体例を示す図である。図２には，横軸を時間軸として，上側に処理内容と処理時間例，下側に処理チャンバー内の圧力変化が示されている。１０秒間のアイドル状態Ｉｄのあと，４０〜１５０℃の高温の不活性ガスが処理チャンバー内に４０秒間供給される。この高温不活性ガスは８０〜１６０Torrの高圧ガスであり，処理チャンバー１０内にブローされチャンバー内圧力を急速に高くなる。その後，真空ポンプ１４により排気が４０秒間行われ，チャンバー内圧力は低下する。１０秒間のアイドル状態に続いて，−１０〜−２０℃の冷却された不活性ガスが処理チャンバー内に４０秒間供給される。この冷却不活性ガスも８０〜１６０Torrの高圧ガスであるので，処理チャンバー１０内にブローされチャンバー内圧力が急速に高くなる。そして，真空ポンプ１４により排気が４０秒間行われ，チャンバー内圧力は低下する。さらに，アイドル状態，高温不活性ガスの高圧ブロー，排気工程，アイドル状態，冷却不活性ガスの高圧ブロー，排気工程が，繰り返される。この繰り返しは，例えば１０回など，製造装置内壁の付着物が除去されるに十分な回数が選択される。   FIG. 2 is a diagram showing a specific example of the cleaning method in the present embodiment. In FIG. 2, the horizontal axis indicates the time axis, the processing content and processing time example are shown on the upper side, and the pressure change in the processing chamber is shown on the lower side. After the idle state Id for 10 seconds, a high-temperature inert gas of 40 to 150 ° C. is supplied into the processing chamber for 40 seconds. This high-temperature inert gas is a high-pressure gas of 80 to 160 Torr, and is blown into the processing chamber 10 to rapidly increase the pressure in the chamber. Thereafter, evacuation is performed for 40 seconds by the vacuum pump 14, and the pressure in the chamber decreases. Following an idle state of 10 seconds, a cooled inert gas of −10 to −20 ° C. is supplied into the processing chamber for 40 seconds. Since this cooling inert gas is also a high-pressure gas of 80 to 160 Torr, it is blown into the processing chamber 10 and the pressure in the chamber rapidly increases. Then, evacuation is performed for 40 seconds by the vacuum pump 14, and the pressure in the chamber decreases. Further, the idle state, high-pressure inert gas high-pressure blow, the exhaust process, the idle state, the cooled inert gas high-pressure blow, and the exhaust process are repeated. For this repetition, for example, 10 times, a number of times sufficient to remove the deposit on the inner wall of the manufacturing apparatus is selected.

上記のように高温不活性ガスの処理チャンバー内への高圧ブローと冷却不活性ガスの処理チャンバー内への高圧ブローとを繰り返すことで，処理チャンバー内壁に堆積した付着物に熱ストレスが印加され，それによって内壁から剥離する。剥離した付着物は，排気工程で処理チャンバー外に除去される。高温不活性ガスと冷却不活性ガスを交互に供給し，且つその間で処理チャンバー内のガスを排気することで，付着物に有効に熱ストレスを印加することができ，剥離を促進し，クリーニング効果を高めることができる。   By repeating the high pressure blow into the treatment chamber of the high temperature inert gas and the high pressure blow into the treatment chamber of the cooling inert gas as described above, thermal stress is applied to the deposits deposited on the inner wall of the treatment chamber, It peels off from the inner wall. The detached deposit is removed outside the processing chamber in the exhaust process. By alternately supplying high-temperature inert gas and cooling inert gas and exhausting the gas in the processing chamber between them, it is possible to effectively apply thermal stress to the deposit, promote peeling, and cleaning effect Can be increased.

図３は，本実施の形態における別のクリーニング方法の具体例を示す図である。図２と同様に，横軸を時間軸として，上側に処理内容と処理時間例，下側に処理チャンバー内の圧力変化が示されている。まず，１０秒間のアイドル状態Ｉｄのあと，真空ポンプ１４による排気が開始される。約４０秒間の排気継続したあと，４０〜１５０℃の高温で８０〜１６０Torrの不活性ガスと，−１０〜−２０℃に冷却され８０〜１６０Torrの不活性ガスとが，交互に４０秒間ずつ処理チャンバー１０に供給される。その間，真空ポンプ１４による排気は継続されている。真空ポンプ１４の能力と供給される不活性ガスの流量とを制御することで，処理チャンバー内の圧力はある高圧状態に保たれる。   FIG. 3 is a diagram showing a specific example of another cleaning method in the present embodiment. As in FIG. 2, the horizontal axis is the time axis, the processing content and processing time example are shown on the upper side, and the pressure change in the processing chamber is shown on the lower side. First, after the idle state Id for 10 seconds, exhaust by the vacuum pump 14 is started. After exhausting for about 40 seconds, an inert gas of 80 to 160 Torr at a high temperature of 40 to 150 ° C. and an inert gas of 80 to 160 Torr cooled to −10 to −20 ° C. are alternately processed for 40 seconds each. It is supplied to the chamber 10. Meanwhile, the exhaust by the vacuum pump 14 is continued. By controlling the capacity of the vacuum pump 14 and the flow rate of the inert gas supplied, the pressure in the processing chamber is maintained at a certain high pressure.

この場合は，排気を継続しながら，処理チャンバー内に高温不活性ガスの高圧ブローと冷却不活性ガスの高圧ブローとが交互に繰り返され，処理チャンバー内の内壁に堆積した付着物に熱ストレスがかかり剥離する。剥離した付着物は，排気により処理チャンバー外に排出される。   In this case, the high pressure blow of the high temperature inert gas and the high pressure blow of the cooling inert gas are alternately repeated in the processing chamber while the exhaust is continued, and thermal stress is applied to the deposit deposited on the inner wall in the processing chamber. It peels off. The detached deposit is discharged out of the processing chamber by exhaust.

上記いずれのクリーニング方法でも，加熱された高圧の不活性ガスと冷却された高圧の不活性ガスとが交互に処理チャンバー内にブローされるので，付着物に熱ストレスがかかるより効果的に剥離し，排気により処理チャンバー外に排出される。   In any of the above cleaning methods, the heated high-pressure inert gas and the cooled high-pressure inert gas are alternately blown into the processing chamber. , Exhausted out of the processing chamber by exhaust.

本実施の形態における半導体製造装置の構成図である。It is a block diagram of the semiconductor manufacturing apparatus in this Embodiment. 本実施の形態におけるクリーニング方法の具体例を示す図である。It is a figure which shows the specific example of the cleaning method in this Embodiment. 本実施の形態における別のクリーニング方法の具体例を示す図である。It is a figure which shows the specific example of another cleaning method in this Embodiment.

符号の説明Explanation of symbols

１０：処理チャンバー １４：真空ポンプ
２０：不活性ガスボンベ ２２：加熱手段
２４：冷却手段 ２６：加圧手段 10: processing chamber 14: vacuum pump 20: inert gas cylinder 22: heating means 24: cooling means 26: pressurizing means

Claims (4)

反応性ガスをチャンバー内に供給して所定の製造処理を行う半導体製造装置のクリーニング方法において，
第１の温度に加熱され所定の圧力に加圧された第１の不活性ガスと，前記第１の温度より低い第２の温度に冷却され所定の圧力に加圧された第２の不活性ガスとを交互に前記チャンバー内に供給しながら，前記チャンバーを排気して前記チャンバー内に付着した付着物を除去することを特徴とする半導体製造装置のクリーニング方法。 In a cleaning method of a semiconductor manufacturing apparatus in which a reactive gas is supplied into a chamber and a predetermined manufacturing process is performed,
A first inert gas heated to a first temperature and pressurized to a predetermined pressure, and a second inert gas cooled to a second temperature lower than the first temperature and pressurized to a predetermined pressure A cleaning method for a semiconductor manufacturing apparatus, wherein gas is alternately supplied into the chamber, and the chamber is evacuated to remove deposits attached to the chamber. 請求項１において，前記所定の圧力は８０〜１６０Torrであり，第１の温度は４０〜１５０℃であり，第２の温度は−１０〜−２０℃である半導体製造装置のクリーニング方法。   2. The method of cleaning a semiconductor manufacturing apparatus according to claim 1, wherein the predetermined pressure is 80 to 160 Torr, the first temperature is 40 to 150 ° C., and the second temperature is −10 to −20 ° C. 反応性ガスをチャンバー内に供給して所定の製造処理を行う半導体製造装置において，
不活性ガスが供給され当該不活性ガスを第１の温度に加熱する加熱手段と，
前記不活性ガスが供給され当該不活性ガスを第１の温度より低い第２の温度に冷却する冷却手段と，
前記加熱手段及び冷却手段で加熱または冷却された不活性ガスを所定の圧力に加圧する加圧手段とを有し，
前記加圧手段で加圧された第１の温度の不活性ガスと第２の温度の不活性ガスとが交互に前記チャンバー内に供給されながら，前記チャンバーが排気されることを特徴とする半導体製造装置。 In a semiconductor manufacturing apparatus that performs a predetermined manufacturing process by supplying a reactive gas into a chamber,
Heating means for supplying an inert gas and heating the inert gas to a first temperature;
Cooling means for supplying the inert gas and cooling the inert gas to a second temperature lower than the first temperature;
Pressurizing means for pressurizing the inert gas heated or cooled by the heating means and the cooling means to a predetermined pressure;
The semiconductor is characterized in that the chamber is evacuated while the inert gas having the first temperature and the inert gas having the second temperature pressurized by the pressurizing means are alternately supplied into the chamber. Manufacturing equipment. 請求項３において，前記所定の圧力は８０〜１６０Torrであり，第１の温度は４０〜１５０℃であり，第２の温度は−１０〜−２０℃である半導体製造装置。   4. The semiconductor manufacturing apparatus according to claim 3, wherein the predetermined pressure is 80 to 160 Torr, the first temperature is 40 to 150 ° C., and the second temperature is −10 to −20 ° C.
JP2006044880A 2006-02-22 2006-02-22 Cleaning method of semiconductor production equipment and semiconductor production equipment with cleaning function Withdrawn JP2007227501A (en)

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US20110059600A1 (en) * 2009-08-27 2011-03-10 Hitachi-Kokusai Electric Inc. Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
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* Cited by examiner, † Cited by third party
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JP2009231794A (en) * 2007-12-05 2009-10-08 Hitachi Kokusai Electric Inc Method for manufacturing semiconductor device and substrate processing apparatus
JP4531833B2 (en) * 2007-12-05 2010-08-25 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and cleaning method
US20110059600A1 (en) * 2009-08-27 2011-03-10 Hitachi-Kokusai Electric Inc. Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
US9238257B2 (en) * 2009-08-27 2016-01-19 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
JP2011084771A (en) * 2009-10-15 2011-04-28 Fuji Electric Holdings Co Ltd Film deposition apparatus and operation method thereof, and electric equipment
CN102134707A (en) * 2009-11-30 2011-07-27 三星移动显示器株式会社 Deposition source, deposition apparatus having the same, and method of forming thin film
US8986783B2 (en) 2009-11-30 2015-03-24 Samsung Display Co., Ltd. Method of forming thin film from multiple deposition sources
JP5940199B1 (en) * 2015-06-26 2016-06-29 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing apparatus, and program
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