JP6301680B2 - Elastic probe - Google Patents
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- JP6301680B2 JP6301680B2 JP2014034450A JP2014034450A JP6301680B2 JP 6301680 B2 JP6301680 B2 JP 6301680B2 JP 2014034450 A JP2014034450 A JP 2014034450A JP 2014034450 A JP2014034450 A JP 2014034450A JP 6301680 B2 JP6301680 B2 JP 6301680B2
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- 239000000523 sample Substances 0.000 title claims description 72
- 239000000835 fiber Substances 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 3
- 239000004917 carbon fiber Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004753 textile Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 21
- 238000007689 inspection Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- Measuring Leads Or Probes (AREA)
Description
本発明は被検査素子の電極端子、とりわけ半導体装置のウェハ状態におけるパッドと樹脂および無機質等の材料で封止したパッケージの電極端子との電気的接触を担うプローブの構造に関するものである。 The present invention relates to a structure of a probe that takes an electrical contact between an electrode terminal of an element to be inspected, particularly a pad in a wafer state of a semiconductor device and an electrode terminal of a package sealed with a material such as a resin and an inorganic material.
電気特性検査工程における被検査素子の電極端子、とりわけウェハ状態の半導体装置におけるパッドとの電気的接触を担うプローブは低抵抗で接触しうる点と耐磨耗の点を考慮して設計され、多くはタングステンや金・銀を主体とした材料を用いた針構造となっている。 Probes responsible for electrical contact with the electrode terminals of the device under test in the electrical property inspection process, especially the pads in the semiconductor device in the wafer state, are designed with consideration given to low resistance and wear resistance. Has a needle structure using materials mainly composed of tungsten, gold and silver.
針構造の保持形態には、いわゆるカンチと呼ばれる片持ち梁型と、プローブ針と押しバネをアルミニウム合金等の導電性を持つ円筒の内部に収納して構成した垂直型が多く見られる。 As the holding structure of the needle structure, a cantilever type called a cantilever and a vertical type in which a probe needle and a push spring are housed inside a conductive cylinder such as an aluminum alloy are often seen.
半導体装置のパッドと電気的接触を成立させる際には、プローブ先端部をパッドに徐々に接近させ、光学顕微鏡などを用いた物理的方法あるいは電気導通の有無など電気的方法等の手段を用いて、双方との間の接触を確認した後に、いわゆるオーバードライブと呼ばれる幾分の押し付け量をさらに加えることが通常である。オーバードライブ量は、接触しているプローブが進む距離として一般に数十ミクロンメートルであるが、これによってプローブ先端部とパッド間の抵抗量を低減させ、かつ、安定した電気的接触を得ることができる。 When establishing electrical contact with the pad of the semiconductor device, the probe tip is gradually approached to the pad, and a physical method using an optical microscope or the like or an electrical method such as the presence or absence of electrical continuity is used. After confirming the contact between the two, it is usual to add a further pressing amount called so-called overdrive. The amount of overdrive is generally several tens of micrometers as the distance traveled by the probe that is in contact, but this can reduce the amount of resistance between the probe tip and the pad and provide stable electrical contact. .
被測定物である半導体装置には、通常、ワイヤーボンディングを実施するためのアルミ合金等の材質で製作されたパッド電極が存在する。これは同時に半導体装置の電気特性試験を行なうためにも必ず必要とされるものである。 A semiconductor device, which is an object to be measured, usually has a pad electrode made of a material such as an aluminum alloy for performing wire bonding. At the same time, this is absolutely necessary for conducting an electrical characteristic test of the semiconductor device.
通常、図５（ａ）および（ｂ）に示すように、このパッド電極２００に金属やタングステン等の導電体で構成されたプローブ３００と呼ばれる電極針を、被測定半導体装置１００のパッド電極２００に接触させることで、電気的導通を得て、半導体装置の電気的特性を測定することが可能である。その際、半導体装置のパッド電極２００表面部ではプローブ針によって、数ミクロン単位での傷２０１が付くことになる。これにより、パッド電極２００の表面部、あるいはパッド電極２００下にある電子回路素子の一部に対して、ある程度のダメージが及ぶ恐れがある。 Normally, as shown in FIGS. 5A and 5B, an electrode needle called a probe 300 made of a conductor such as metal or tungsten is attached to the pad electrode 200 of the semiconductor device 100 to be measured. By making contact, it is possible to obtain electrical continuity and to measure the electrical characteristics of the semiconductor device. At that time, the surface 201 of the pad electrode 200 of the semiconductor device is damaged by a probe needle in units of several microns. This may cause some damage to the surface portion of the pad electrode 200 or a part of the electronic circuit element under the pad electrode 200.
プローブ先端部とパッドを構成する材料を比べると、プローブ先端部の硬度が大きいため、オーバードライブ量によってプローブ先端部がパッドに食い込み、更にパッド表層付近の物理的形状を変化させて電気的接触を図ることとなる。このパッドの形状変化は塑性変形であるので傷という形で残り、修復がされることはない。そして過度の傷はその後の針構造先端部とパッドとの間の抵抗量を増大させる可能性があり、電気特性検査においては電気ノイズを発生させる原因のひとつともなる。例えば、本来正常動作をする何ら欠陥のないダイであるにもかかわらず、誤動作を引き起こして不具合の判定となり、あるいは直流出力値に本来の値からのズレを発生させ、結果として電気特性検査の判定結果を左右しかねない。さらには、樹脂パッケージ実装時のパッドに対するボンディングワイヤーの溶着性を低下させる可能性があるので、プローブとパッド間の接触回数に制限を設けざるを得ないことがあり得る。また、パッドを構成する材料はプローブ先端部との接触の際に塑性変形するが、変形の全てがパッド内に留まるとは限らずその一部が微細な粒子となってパッド周囲に脱落、あるいはプローブ先端部に付着する場合がある。プローブ先端部に付着した微細な粒子は、プローブ先端部とパッドとの間に異物として介在するためプローブ先端部とパッド間の抵抗量を増大させる可能性がある。 Comparing the probe tip and the material composing the pad, the hardness of the probe tip is large, so the probe tip bites into the pad depending on the amount of overdrive, and further changes the physical shape near the pad surface layer to make electrical contact. It will be planned. Since the change in the shape of the pad is plastic deformation, it remains in the form of scratches and is not repaired. Excessive scratches can increase the amount of resistance between the tip of the needle structure and the pad thereafter, which is one of the causes of electrical noise in electrical characteristic inspection. For example, despite the fact that the die does not have any defects that normally operate normally, a malfunction is caused and a failure is determined, or the DC output value is deviated from the original value, and as a result, the electrical characteristic inspection is determined. The result may be affected. Furthermore, since there is a possibility that the weldability of the bonding wire to the pad when the resin package is mounted, it may be necessary to limit the number of contacts between the probe and the pad. In addition, the material constituting the pad plastically deforms upon contact with the probe tip, but not all of the deformation stays in the pad, and some of it becomes fine particles that fall around the pad, or It may adhere to the probe tip. The fine particles adhering to the probe tip portion are interposed as a foreign substance between the probe tip portion and the pad, so that there is a possibility of increasing the resistance amount between the probe tip portion and the pad.
上記課題を解決するために、本発明では以下の様な手段を用いた。
まず、被検査素子の電極端子との電気的接触を担う弾性プローブにおいて、プローブ基部と、前記プローブ基部の先に、可撓性で導電性の先端弾性体を設けたことを特徴とする弾性プローブとした。
In order to solve the above problems, the present invention uses the following means.
First, in an elastic probe that is in electrical contact with an electrode terminal of an element to be inspected, an elastic probe comprising a probe base and a flexible and conductive tip elastic body at the tip of the probe base. It was.
また、前記先端弾性体が、導電性繊維が絡み合った集合体であることを特徴とする弾性プローブとした。
また、前記導電性繊維集合体が、炭素繊維からなることを特徴とする弾性プローブとした。
The tip elastic body is an aggregate in which conductive fibers are entangled with each other.
In addition, an elastic probe is characterized in that the conductive fiber assembly is made of carbon fiber.
また、前記先端弾性体が、導電性粒子または、導電性樹脂塊であることを特徴とする弾性プローブとした。
また、前記導電性樹脂塊が、導電性粒子または導電性繊維を絶縁性樹脂塊に混練したものであることを特徴とする弾性プローブとした。
The tip elastic body is a conductive particle or a conductive resin lump.
In addition, an elastic probe is characterized in that the conductive resin mass is obtained by kneading conductive particles or conductive fibers into an insulating resin mass.
また、前記絶縁性樹脂塊内における前記導電性粒子または前記導電性繊維の前記電極端子との接触領域における密度が前記電極端子との非接触領域における密度よりも高いことを特徴とする弾性プローブとした。
また、前記先端弾性体が、絶縁性樹脂塊表面に導電性膜や導電性繊維を被覆したものであることを特徴とする弾性プローブとした。
An elastic probe characterized in that the density of the conductive particles or the conductive fibers in the insulating resin mass in the contact region with the electrode terminal is higher than the density in the non-contact region with the electrode terminal; did.
In addition, an elastic probe is characterized in that the tip elastic body is obtained by coating a surface of an insulating resin mass with a conductive film or conductive fiber.
また、被検査素子の電極端子との電気的接触を担う弾性プローブを用いる検査方法において、前記弾性プローブを前記電極端子と接触させる工程と、前記弾性プローブを押圧して、前記先端弾性体を撓ませて、前記先端弾性体と前記電極端子と接触面積を拡大する工程と、前記被検査素子を電気特性検査する工程と、からなる弾性プローブを用いる検査方法とした。
また、前記電極端子が、パッド電極またはバンプ電極であることを特徴とする弾性プローブを用いる検査方法とした。
In the inspection method using an elastic probe that is in electrical contact with an electrode terminal of an element to be inspected, a step of bringing the elastic probe into contact with the electrode terminal, and pressing the elastic probe to bend the tip elastic body. An inspection method using an elastic probe comprising a step of expanding the contact area between the tip elastic body and the electrode terminal and a step of inspecting the element to be inspected for electrical characteristics.
The inspection method using an elastic probe is characterized in that the electrode terminal is a pad electrode or a bump electrode.
上記手段を用いることで、本発明の弾性プローブは、電気特性検査工程における被検査素子の電極端子、とりわけウェハ状態の半導体装置におけるパッドとの電気的接触において、接触の際のパッドへ与える物理的ダメージを大きく低減するので樹脂等パッケージ実装時のパッドに対するボンディングワイヤーの溶着性低下の懸念を低減する。よって製品の信頼性を向上させ、また再々度のプローブ先端部とパッドとの間の接触に際しても抵抗値を増大させることがない。 By using the above-described means, the elastic probe of the present invention is physically applied to the pad at the time of contact in electrical contact with the electrode terminal of the element to be inspected in the electrical property inspection process, particularly with the pad in the semiconductor device in the wafer state. Since the damage is greatly reduced, the concern about a decrease in the weldability of the bonding wire to the pad when packaging a resin or the like is reduced. Therefore, the reliability of the product is improved, and the resistance value is not increased even when the probe tip is repeatedly contacted with the pad.
また、接触抵抗は低抵抗であるので、電気特性検査においては電気ノイズの低減となり、正常動作品の不良判定品への誤判定防止に繋がり、製品取れ個数の減少および全体としての製造コストの上昇を未然に抑え、さらに、直流出力値を本来の値からズレを発生させる要因の割合を減らすため電気特性検査への信頼度を高める効果がある。 In addition, since the contact resistance is low, electrical noise is reduced in electrical characteristics inspection, leading to prevention of erroneous judgment of defective products that are operating normally, reducing the number of products that can be taken, and increasing the overall manufacturing cost. In addition, there is an effect of increasing the reliability of the electrical characteristic inspection because the ratio of the factor that causes the deviation of the DC output value from the original value is reduced.
以下に、図面を用いて本発明の実施の形態を説明する。 Embodiments of the present invention will be described below with reference to the drawings.
図１は、本発明の第１の実施例による弾性プローブをパッド電極に適用した場合の側面図であるが、その構成は、図１（ａ）のように、タングステン等の金属からなるプローブ基部３０１の先端に、可撓性で導電性の先端弾性体３０２を設けたものである。図１（ｂ）に示すように、弾性プローブが下降するとパッド電極２００と接触すると、次に、先端弾性体３０２はパッド電極２００に押し付けられ、弾性体の押圧部分が撓み、他の部分が膨らむ形状となり、先端弾性体３０２とパッド電極２００との接触面積は次第に拡大する。この時、接触面積がプローブ基部３０１の断面積以上であることが望ましい。押圧された圧力は、弾性体３０２がパッド電極２００と接する面に均一に加わることになり、広い接触領域において良好な電気的接触を得ることができる。先端弾性体３０２とパッド電極２００が適度に接触して後、通常の方法にてテスタからの電気的信号をパッド電極から入力することで半導体装置の電気特性検査をする。 FIG. 1 is a side view when the elastic probe according to the first embodiment of the present invention is applied to a pad electrode. The configuration of the probe base is made of a metal such as tungsten as shown in FIG. A flexible and conductive tip elastic body 302 is provided at the tip of 301. As shown in FIG. 1B, when the elastic probe descends and comes into contact with the pad electrode 200, the tip elastic body 302 is then pressed against the pad electrode 200, the pressing portion of the elastic body bends, and the other portion expands. The contact area between the tip elastic body 302 and the pad electrode 200 gradually increases. At this time, the contact area is desirably equal to or larger than the cross-sectional area of the probe base 301. The pressed pressure is uniformly applied to the surface where the elastic body 302 is in contact with the pad electrode 200, and good electrical contact can be obtained in a wide contact area. After the tip elastic body 302 and the pad electrode 200 are in proper contact with each other, the electrical characteristics of the semiconductor device are inspected by inputting an electrical signal from the tester from the pad electrode by a normal method.
電気特性検査が終了した後は、弾性プローブをパッド電極２００から離すが、先端弾性体３０２は可撓性を有しているので、パッド電極２００から離れれば、元の形状に回復し、形状が復元されることになる。以上の工程によりパッド電極２００の表面に大きな傷をつけることはない。 After the electrical property inspection is completed, the elastic probe is separated from the pad electrode 200. However, since the tip elastic body 302 has flexibility, when it is separated from the pad electrode 200, the original shape is recovered and the shape is restored. Will be restored. The above process does not damage the surface of the pad electrode 200.
このように本実施例によれば、従来、硬度の高いプローブによって局所的に押圧されることで発生していたパッド電極表面の傷を回避できることになる。また、パッド電極下方に半導体素子が形成されていた場合であっても、その半導体素子の破壊を回避できることになる。本構成では、半導体装置のパッド電極２００表面部が荒れた状態であったり、あるいは異物が乗っていたりする状態であっても、さほど影響を受けずに電気的接触を図ることができるという利点もある。 As described above, according to the present embodiment, it is possible to avoid scratches on the surface of the pad electrode, which have conventionally occurred by being locally pressed by a probe having high hardness. Further, even when a semiconductor element is formed below the pad electrode, it is possible to avoid destruction of the semiconductor element. In this configuration, even when the surface of the pad electrode 200 of the semiconductor device is in a rough state or in a state in which a foreign substance is riding, there is an advantage that electrical contact can be achieved without being affected so much. is there.
従来のプローブ試験では、プローブがパッド電極に接触したのち、プローブを滑らせる、いわゆるオーバードライブという操作を行うが、この際、パッド電極端部の保護膜を破損するということもある。しかしながら、本発明の弾性プローブを利用すれば、オーバードライブという操作は不要であり、弾性プローブとパッド電極との多少のアライメントズレがあっても、弾性プローブの一部が保護膜に乗り上げる程度であって、保護膜を破壊することもなく、電気的接触が阻害されるという懸念もない。 In the conventional probe test, after the probe contacts the pad electrode, a so-called overdrive operation is performed in which the probe is slid. At this time, the protective film at the end of the pad electrode may be damaged. However, if the elastic probe of the present invention is used, the operation of overdrive is unnecessary, and even if there is a slight misalignment between the elastic probe and the pad electrode, only a part of the elastic probe rides on the protective film. Thus, the protective film is not destroyed, and there is no concern that electrical contact is hindered.
図１に示した実施例１においては、先端弾性体３０２を微細な繊維（ワイヤ）の集合体、すなわち、導電性繊維集合体３１１として形成する。細いステンレスを用いた金属タワシのように極細の金属繊維どうしを絡めた集合体とすることで、パッド電極２００と導電性繊維集合体３１１とが接触すると、集合体がパッド電極表面の形状に合わせて撓み、パッド電極と広範囲で密着することになる。ここで、繊維集合体には、銅、銀、金、アルミニウム、ニッケル、タングステンなどの導電性の良好な金属、または、これらを主材とする合金からなる細線を利用するのが良い。また、導電性の炭素繊維の集合体を利用することでも良い。 In the first embodiment shown in FIG. 1, the tip elastic body 302 is formed as a collection of fine fibers (wires), that is, a conductive fiber assembly 311. When the pad electrode 200 and the conductive fiber assembly 311 are in contact with each other by forming an assembly in which ultrafine metal fibers are entangled like a metal scrub using thin stainless steel, the assembly conforms to the shape of the pad electrode surface. Will be bent and will be in close contact with the pad electrode over a wide range. Here, as the fiber assembly, it is preferable to use a thin wire made of a metal having good conductivity such as copper, silver, gold, aluminum, nickel, tungsten, or an alloy containing these as a main material. Alternatively, an aggregate of conductive carbon fibers may be used.
図２は、本発明の第２の実施例による実施形態の弾性プローブの側面図である。
プローブ基部３０１の先に形成される先端弾性体３０２は、導電性粒子や導電性繊維を樹脂に練り込んだ導電性樹脂塊３１３という構成である。導電性粒子や導電性繊維には、金、銀、銅、アルミニウム、ニッケル、タングステンなどの金属、または、これらを主材とする合金を利用するのが良い。樹脂塊には、球状の絶縁性シリコンゴムなどを利用するのが良い。この時、樹脂塊内における導電性粒子や導電性繊維の密度は均一であっても良いが、パッド電極と接する面における密度を高めることで電気的接触の信頼性を高めることができる。
以上では、導電性物質を混練した樹脂塊の例を説明したが、樹脂塊自身が導電性ポリマーであれば、金属系の導電性物質を混練する必要はない。
FIG. 2 is a side view of the elastic probe according to the second embodiment of the present invention.
The tip elastic body 302 formed at the tip of the probe base 301 has a configuration called a conductive resin mass 313 in which conductive particles or conductive fibers are kneaded into a resin. For the conductive particles and conductive fibers, it is preferable to use a metal such as gold, silver, copper, aluminum, nickel, tungsten, or an alloy containing these as a main material. For the resin mass, it is preferable to use spherical insulating silicon rubber or the like. At this time, the density of the conductive particles and conductive fibers in the resin mass may be uniform, but the reliability of electrical contact can be increased by increasing the density on the surface in contact with the pad electrode.
Although the example of the resin lump kneaded with the conductive material has been described above, if the resin lump itself is a conductive polymer, it is not necessary to knead the metal-based conductive material.
図３は、本発明の第３の実施例による実施形態の弾性プローブの側面図である。
プローブ基部３０１の先に形成される先端弾性体３０２は、球状のシリコンゴム等からなる樹脂塊３１２の表面に導電性膜や導電性繊維３１４を被覆した形状である。先端弾性体３０２がパッド電極に押圧されると、芯部の樹脂塊３１２の変形に合わせて周囲の導電性膜や導電性繊維３１４が変形してプローブとパッド電極との電気的接触を良好に保つことができる。ここで、周囲の導電性膜や導電性繊維３１４は、均一であっても良いが、パッド電極２００と接触する領域だけを密にし、他を疎にする構成でも構わない。なお、表面の導電性膜はＰＶＤ法やＣＶＤ法や貼り付け法によって形成できる。導電性繊維は撚糸を貼り付ける方法で形成することができる。
FIG. 3 is a side view of an elastic probe according to an embodiment of the third embodiment of the present invention.
The tip elastic body 302 formed at the tip of the probe base 301 has a shape in which a conductive film or conductive fiber 314 is coated on the surface of a resin lump 312 made of spherical silicon rubber or the like. When the tip elastic body 302 is pressed against the pad electrode, the surrounding conductive film and the conductive fiber 314 are deformed in accordance with the deformation of the resin mass 312 in the core, and the electrical contact between the probe and the pad electrode is improved. Can keep. Here, the surrounding conductive film and the conductive fibers 314 may be uniform, but may be configured such that only the region in contact with the pad electrode 200 is dense and the others are sparse. Note that the conductive film on the surface can be formed by a PVD method, a CVD method, or a pasting method. The conductive fiber can be formed by a method of attaching twisted yarn.
図４は、本発明の弾性プローブをバンプ電極に適用した場合の側面図である。図４（ａ）および（ｂ）は、バンプ電極の頂部、側部におけるプローブとの接触状態をそれぞれ示したものであるが、本発明の弾性プローブを用いれば、球状の表面を有するバンプ電極４００のいずれの箇所においても先端弾性部３０２とバンプ電極４００とが良好な電気的接触を得ることが可能である。 FIG. 4 is a side view when the elastic probe of the present invention is applied to a bump electrode. 4 (a) and 4 (b) show the contact state of the bump electrode with the probe at the top and the side, respectively. If the elastic probe of the present invention is used, the bump electrode 400 having a spherical surface is shown. It is possible to obtain good electrical contact between the tip elastic portion 302 and the bump electrode 400 at any of these locations.
図６は、比較のために従来のプローブをバンプ電極に適用した場合の図であるが、この場合は、パッド電極の場合と異なる先端形状のプローブ３００を用いたとしても、バンプ電極４００とプローブ３００とのアライメントズレ許容値が図４に示す例よりも小さいのは明らかである。以上の比較から分かるように、本発明の弾性プローブは、半導体装置上の電極がパッド電極でもバンプ電極でも同一形状のものを利用することができるという利点がある。 FIG. 6 shows a case where a conventional probe is applied to a bump electrode for comparison. In this case, even if a probe 300 having a tip shape different from the case of a pad electrode is used, the bump electrode 400 and the probe are used. It is clear that the allowable misalignment with 300 is smaller than the example shown in FIG. As can be seen from the above comparison, the elastic probe of the present invention has an advantage that the same shape of the electrode on the semiconductor device can be used regardless of whether it is a pad electrode or a bump electrode.
通常、半導体装置の最終形態として、パッケージと呼ばれる半導体装置表面を樹脂等で包み込む構造体の内部に収納され、電極であるパッドは金に代表されるワイヤで接続される。このワイヤとの接触はなるべくパッドの表面が荒れていない状態が望ましい。 Usually, as a final form of the semiconductor device, the surface of the semiconductor device called a package is housed in a structure that wraps the surface of the semiconductor device with resin or the like, and pads that are electrodes are connected by wires typified by gold. The contact with the wire is preferably in a state where the surface of the pad is not as rough as possible.
今後、半導体装置が使用用途が産業的に広がる中で、半導体装置上のワイヤーボンディングの強度も高信頼性を求められるケースが増加している。本特許による弾性プローブを使用することにより、半導体装置のパッド表面には最小限の傷しか残らないため、より高信頼性のボンディングが可能となる。 In the future, as semiconductor devices are used for industrial purposes, the number of cases where high reliability is required for the strength of wire bonding on the semiconductor device is increasing. By using the elastic probe according to the present patent, since a minimal scratch remains on the pad surface of the semiconductor device, bonding with higher reliability becomes possible.
特異なケースではあるが、ウェハのまま出荷する製品の電気特性上のモニター用としてウェハが維持されて使用されている場合がある。そのようなケースでは、測定する度に測定電極端子であるモニター用のウェハのパッドが、電気特性検査の度に表面の金属が削られて磨耗してしまうという課題があり、その使用回数が限られていたが、本発明を使用することにより、何度測定してもパッドを傷める心配がないため、モニター機能を有するウェハの管理が容易となる。 Although it is a peculiar case, there are cases where the wafer is maintained and used for monitoring the electrical characteristics of products shipped as a wafer. In such a case, there is a problem that the surface of the wafer pad for monitoring, which is the measurement electrode terminal, is worn out by the surface metal being scraped every time the electrical characteristics are inspected. However, by using the present invention, there is no fear of damaging the pad no matter how many times measurement is performed, so that management of a wafer having a monitoring function becomes easy.
１００ 半導体装置
２００ パッド電極
２０１ パッド電極上の針跡
３００ プローブ
３０１ プローブ基部
３０２ プローブ針先端弾性体
３１１ 導電性繊維集合体
３１２ 樹脂塊
３１３ 導電性樹脂塊
３１４ 導電性膜、導電性繊維
４００ バンプ電極
DESCRIPTION OF SYMBOLS 100 Semiconductor device 200 Pad electrode 201 Needle trace 300 on pad electrode Probe 301 Probe base 302 Probe needle tip elastic body 311 Conductive fiber aggregate 312 Resin lump 313 Conductive resin lump 314 Conductive film, conductive fiber 400 Bump electrode
Claims (2)
プローブ基部と、
前記プローブ基部の先に設けられた可撓性で導電性の先端弾性体と、
を備え、
前記先端弾性体は、絶縁性樹脂塊の表面に導電性繊維を被覆したものであって、前記電極端子と接触する領域における前記導電性繊維の密度が非接触領域における前記導電性繊維の密度よりも高いことを特徴とする弾性プローブ。 An elastic probe responsible for electrical contact with the electrode terminals of the device under test,
A probe base;
A flexible and conductive tip elastic body provided at the tip of the probe base;
Equipped with a,
The tip elastic body is obtained by coating the surface of an insulating resin mass with conductive fibers, and the density of the conductive fibers in the region in contact with the electrode terminal is higher than the density of the conductive fibers in the non-contact region. Elastic probe characterized by high
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| JPS6361965A (en) * | 1986-09-03 | 1988-03-18 | Ricoh Co Ltd | Method and device for inspecting pattern substrate |
| JPH0254814A (en) * | 1988-08-17 | 1990-02-23 | Sharp Corp | Contact pin |
| US5134364A (en) * | 1990-06-19 | 1992-07-28 | Prime Computer, Inc. | Elastomeric test probe |
| JPH04127576U (en) * | 1991-05-10 | 1992-11-20 | 大西電子株式会社 | Conductive head for circuit inspection of printed wiring boards |
| JP2002340933A (en) * | 2001-05-17 | 2002-11-27 | Seiko Epson Corp | Inspection jig of semiconductor device and its production method |
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