JP6299210B2 - Substrate transfer device and EFEM - Google Patents

Description

  The present invention relates to a substrate transfer apparatus capable of optimizing the surface properties of a substrate being transferred, and an EFEM including the substrate transfer device.

  Conventionally, semiconductors have been manufactured by performing various processing steps on a wafer as a substrate. In recent years, higher integration of devices and circuit miniaturization have been promoted, and it is required to maintain the wafer periphery with a high degree of cleanliness so that particles and moisture do not adhere to the wafer surface. . Furthermore, in order not to change the surface properties such as oxidation of the wafer surface, the periphery of the wafer is made an inert gas nitrogen atmosphere or a vacuum state.

  In order to properly maintain the atmosphere around the wafer, the wafer is managed in a sealed storage pod called FOUP (Front-Opening Unified Pod), which is filled with nitrogen. Further, EFEM as disclosed in Patent Document 1 below is used to transfer a wafer between a processing apparatus for processing a wafer and the FOUP. The EFEM constitutes a wafer transfer chamber that is substantially closed inside the housing, and has a load port that functions as an interface unit with the FOUP on one of its opposing wall surfaces, and a process on the other side. A load lock chamber which is part of the apparatus is connected. A wafer transfer device for transferring wafers is provided in the wafer transfer chamber, and wafers are taken in and out between the FOUP connected to the load port and the load lock chamber using this wafer transfer device. .

  That is, a wafer is taken out from a FOUP (load port) serving as one delivery position using a wafer conveyance device, and conveyed to a load lock chamber serving as the other delivery position. In the processing apparatus, the wafer transferred through the load lock chamber is processed in a processing unit called a process chamber, and after the processing is completed, the wafer is taken out again through the load lock chamber and stored in the FOUP. Returned to

  The inside of the processing apparatus has a special atmosphere such as a vacuum corresponding to the processing so that the wafer can be processed quickly. In addition, the inside of the wafer transfer chamber in the EFEM has a clean air atmosphere with high cleanliness by introducing air that has been cleaned through a chemical filter or the like, and is caused by adhesion of particles or the like to the surface of the wafer being transferred. There is no contamination.

JP 2012-49382 A

  However, in recent years, with the progress of higher integration and miniaturization, the EFEM wafer transfer chamber has a relatively high degree of cleanliness, but is affected by the air atmosphere different from that in the FOUP and processing equipment. There is a growing concern.

  That is, exposure to an air atmosphere tends to cause moisture and oxygen to adhere to the substrate surface, which may cause corrosion and oxidation. Further, when the corrosive gas or the like used in the processing apparatus remains on the wafer surface, the wiring material on the wafer surface may be corroded and the yield may be deteriorated. Furthermore, since the corrosion element accelerates the corrosion reaction due to the presence of moisture, there is a possibility that the corrosion proceeds more quickly when both the corrosive gas and the moisture exist.

  In order to avoid this, like the FOUP, it is conceivable to reduce the amount of moisture contained in the gas around the wafer by setting the inside of the wafer transfer chamber to a nitrogen atmosphere. However, since the volume of the wafer transfer chamber is large, a large amount of nitrogen gas is used. And the cost increases, and the nitrogen replacement takes a long time. Further, when the gas supply pressure to the inside of the wafer transfer chamber is increased, it is necessary to increase the thickness in order to give the wall surface a strength that can counter this, and the manufacturing cost increases. Further, when nitrogen leaks from the EFEM, problems such as oxygen deficiency in the vicinity may occur. In addition, in recent years, an EFEM that can connect a large number of FOUPs for further efficiency has been proposed, and this increases the volume of the wafer transfer chamber. The problem will be noticeable.

  In addition, it can be said that the above problem also occurs when a substrate other than a wafer is transported as long as the transport is performed in an atmosphere different from the processing or storage location.

  An object of the present invention is to effectively solve such problems. Specifically, a substrate capable of suppressing the adhesion of moisture to the substrate being transported and optimizing the surface properties of the substrate. An object of the present invention is to provide a transfer device and an EFEM including the substrate transfer device.

  In order to achieve this object, the present invention takes the following measures.

  That is, the substrate transport apparatus of the present invention is supported by the base, which is movable along a predetermined path, the transport arm supported by the base and holding and transporting the substrate, and the base. And a heater disposed at a position that can be opposed to the transfer arm, and the substrate surface can be heated by the heater when the substrate is transferred by the transfer arm.

  If comprised in this way, the board | substrate hold | maintained by the conveyance arm between board | substrate conveyance can be heated with a heater, the water | moisture content adhering to the substrate surface is removed, the change in the surface property of a board | substrate is suppressed, and it maintains appropriately. can do. Moreover, it can utilize as a heat processing performed before and after the process performed to a board | substrate in the processing apparatus of a conveyance destination, and can also optimize a substrate surface by performing as a part of process process. In that case, it is possible to shorten the time of the substrate processing process and to reduce the installation space of the processing equipment.

In the substrate transport, the present invention in order to be able to efficiently heat the substrate, said heater, characterized by configured to extend along the moving direction of the substrate by the transfer arm.

  Furthermore, in order to increase the efficiency of heating the substrate while saving energy, the heater is composed of a plurality of heat generating portions that generate heat by energization, and energization is performed according to the movement of the substrate by the transfer arm. It is preferable that the heat generating part for performing the switching can be switched.

In order to further increase the efficiency of heating the substrate, it is preferable to configure the heater so that at least one of the position and the direction can be changed according to the movement of the substrate by the transfer arm. Moreover, it is desirable that the gas is a dry nitrogen gas. Furthermore, it is desirable that the base is movable by a guide rail.

Further, in order to increase the efficiency of heating the substrate and to make the atmosphere around the substrate uniform, the present invention supports a substrate provided in the substrate transfer chamber and the substrate, and holds and transfers the substrate. a transfer arm which, upon conveying the substrate by the transfer arm, and configured to be able to heat the substrate surface to suppress the moisture adhesion on the substrate surface by the pressurized heat sink, further across the heater, the transfer arm It is characterized in that gas can be supplied to the substrate surface by providing a blowing means at a position that can be opposed to the substrate.

Furthermore, the heating by the heater, in order to optimize the properties of the further substrate surface by supplying gas suitable for the substrate surface, said blowing means, said gas obtained from the gas supply source to the transfer arm It is preferable to configure so that the supply can be directed.

  In order to allow the heating by the heater and the blowing by the blowing means to be performed at an appropriate timing and to further optimize the surface property of the substrate while saving energy, the heater, It is preferable to provide a timing control unit for controlling the operation timing of the blowing means.

  Furthermore, by comprising as said EFEM which provided said board | substrate conveyance apparatus and the housing | casing which covers this, and set the delivery position for delivering a board | substrate adjacent to the wall surface of the said case, between each delivery position, While carrying, it is possible to stabilize the surface property of the substrate by removing moisture by heating the surface of the substrate, or to optimize the surface property of the substrate by performing heat treatment before and after the treatment applied to the substrate. EFEM can also be realized effectively.

  According to the present invention described above, the substrate transport apparatus capable of suppressing the adhesion of moisture to the substrate surface and optimizing the surface properties of the substrate by heating the substrate being transported, and the substrate transport apparatus. It becomes possible to provide EFEM provided with.

Explanatory drawing which shows the relationship between EFEM provided with the board | substrate conveyance apparatus which concerns on 1st Embodiment of this invention, and a processing apparatus. Explanatory drawing which shows the state which looked at the principal part of the board | substrate conveyance apparatus from the plane. Explanatory drawing which shows the state which looked at the principal part of the board | substrate conveyance apparatus from the front or the side. Explanatory drawing which shows the state which moved the movable stand of the board | substrate conveyance apparatus from the state of FIG. Explanatory drawing which shows the state which made the pick approach into FOUP from the state of FIG. The top view which shows the state which pulled the pick back on the movable stand from the state of FIG. Explanatory drawing which shows the state which moved the pick in front of the load lock chamber from the state of FIG. Explanatory drawing which shows the state which made the pick approach into the load lock room from the state of FIG. Explanatory drawing which shows typically the structure of the heater with which the board | substrate conveyance apparatus is provided. Explanatory drawing which shows the relationship between EFEM provided with the board | substrate conveyance apparatus which concerns on 2nd Embodiment of this invention, and a processing apparatus. Explanatory drawing which shows the state which looked at the principal part of the board | substrate conveyance apparatus from the plane. Explanatory drawing which shows the state which looked at the principal part of the board | substrate conveyance apparatus from the front or the side. Explanatory drawing which shows the state which looked at the principal part of the board | substrate conveyance apparatus which concerns on 3rd Embodiment of this invention from the plane or the front. Explanatory drawing which shows the state which made the pick approach from FOUP from the state of FIG. Explanatory drawing which shows the state which looked at the principal part of the board | substrate conveyance apparatus which concerns on 4th Embodiment of this invention from the front or the side. Explanatory drawing which shows the state which looked at the principal part of the board | substrate conveyance apparatus which concerns on 5th Embodiment of this invention from the plane. Explanatory drawing which shows the state which looked at the principal part of the board | substrate conveyance apparatus from the front or the side.

  Embodiments of the present invention will be described below with reference to the drawings.

<First Embodiment>
The substrate transfer apparatus of the first embodiment is configured as a wafer transfer apparatus 2 that transfers a wafer W as a substrate, and is one of the components of the EFEM 1 shown in FIG. The EFEM 1 is composed of a main body 11 which is a mechanical device part and a control means 9 for controlling this operation. The main body 11 includes the wafer transfer device 2 described above, and a predetermined delivery position using this. The wafers W can be transferred between them. A casing 51 is provided so as to surround the wafer transfer apparatus 2, and the casing 51 includes casing walls 51 a to 51 d that form wall surfaces that surround the four sides of the wafer transfer apparatus 2 and a ceiling wall (not shown). Thus, the wafer transfer chamber 5 is formed in which a substantially closed space is formed. Further, a plurality of (three in the figure) load ports 61 to 61 are provided adjacent to the outside of one housing wall 51a. These are provided in the wafer transfer chamber 5 and the interior thereof. A main body 11 of the EFEM 1 is configured by the wafer transfer device 2.

  In the drawing, a state in which the FOUP 62 is placed on the load port 61 is schematically shown. Each load port 61 is provided with a door 61a. When the door 61a is connected to a lid 62a provided on the FOUP 62 and moves together, the FOUP 62 is opened to the wafer transfer chamber 5. Yes. In the FOUP 62, a large number of mounting portions 62b and 62b that support a single wafer W in a pair are provided in the vertical direction. By using these, a large number of wafers W can be stored. The FOUP 62 is normally filled with nitrogen gas, and the atmosphere in the FOUP 62 can be replaced with nitrogen through the load port 61.

  A load lock chamber 81 constituting a part of the processing apparatus 8 can be connected adjacent to the outside of the housing wall 51c facing the load port 61, and the door 81a of the load lock chamber 81 is opened. Thus, the wafer transfer chamber 5 and the load lock chamber 81 can be in communication with each other. Various processing apparatuses 8 can be used, but generally, a transfer chamber 82 is provided adjacent to the load lock chamber 81, and a plurality of (three in the figure) processes are adjacent to the transfer chamber 82. A unit 83 is provided. Doors 82a and 83a to 83a are provided between the transfer chamber 82 and the load lock chamber 81 and the processing units 83 to 83, respectively, and can be communicated with each other by opening them. The wafer W can be moved between the load lock chamber 81 and the processing units 83 to 83 by using the transfer robot 82b provided in the transfer chamber 82.

  The wafer transfer device 2 generally includes a guide rail 21 constituting a predetermined track, a movable base 22 as a base movable along the guide rail 21, and a transfer arm provided on the movable base 22. 24 and the heating means 3 forming the characteristic part of the present invention.

  FIG. 2 is an enlarged plan view schematically showing the vicinity of the transfer arm 24 of the wafer transfer apparatus 2. FIG. 2A shows a state where the transfer arm 24 is extended, and FIG. A state where the transfer arm 24 is shortened is shown. FIG. 3A is a front view schematically showing a case where this is viewed from the extending direction of the guide rail 21, and FIG. 3B is a view when this is viewed from a direction orthogonal to the guide rail 21. It is the side view which showed typically the case. Hereinafter, the detailed structure of the wafer transfer device 2 will be described with reference to FIGS. 2 and 3.

  First, the guide rail 21 is disposed on the floor surface F in the housing 51 (see FIG. 1), and a movable base 22 as a base formed in a rectangular plate shape is supported on the guide rail 21. The guide rail 21 forms a linear track by being linearly arranged so as to be parallel to the housing walls 51a and 51c (see FIG. 1), and the movable base 22 is guided by driving means (not shown). It can be moved along the rail 21.

  A base 23 having a substantially cylindrical shape is provided on the upper surface of the movable table 22, and a transport arm 24 is supported on the upper portion of the base 23. The transfer arm 24 can have various structures that are generally known. For example, a SCARA type horizontal articulated robot, a multi-stage slide type arm robot, a link type arm robot, or the like is preferably used. can do. In this embodiment, the transfer arm 24 is configured as a link-type arm robot including a plurality of arm elements 24 a to 24 d constituting a link and a pick 25.

  Specifically, the base ends of the arm elements 24a and 24b are rotatably supported on the base 23, and the base ends of the arm elements 24c and 24d are rotatably supported by the distal ends of the arm elements 24a and 24b, respectively. I am letting. The distal ends of the arm elements 24 c and 24 d are both connected to the proximal end of the pick 25. Each of the arm elements 24a to 24d can be rotated in a horizontal plane, and the pick 25 can be moved in cooperation by being connected to each other. With this configuration, the pick 2 can be moved linearly by rotating the arm elements 24a and 24b by an actuator (not shown) incorporated in the base 23 (FIG. 2B). )reference).

  The pick 25 described above is formed as a plate-like member having a U-shaped tip in plan view, and the wafer W can be placed on the upper surface thereof. Further, the transfer arm 24 is configured to be horizontally rotatable on the movable table 22, and the pick 25 can be directed in any direction of the housing walls 51a and 51c (see FIG. 1).

  By configuring as described above, the wafer transfer apparatus 2 allows the wafer W placed on the pick 25 constituting the transfer arm 24 to be moved in the horizontal direction parallel to the housing walls 51a and 51c (see FIG. 1), It can be moved to two axes in the orthogonal direction. Further, the base 23 can also be moved up and down, and by combining this operation, the wafer W can be lifted by the pick 25 and the wafer W on the pick 25 can be transferred to a predetermined delivery position. It has become. In the EFEM 1 in the present embodiment, a plurality of load ports 61 in which the FOUP 62 is installed and a load lock chamber 81 (see FIG. 1) facing the load ports 61 are set as delivery positions for delivering the wafer W. Thus, the wafer W can be moved using the wafer transfer device 2.

  Further, the heating means 3 is provided on the movable table 22 on the side of the transfer arm 24. The heating means 3 is provided on the movable base 22 on the back side of the base 23 on the movable base 22, a support arm 32 that is lifted above the support base 31, and an upper end of the support arm 32. And a heater 33.

  The support arm 32 is disposed in the vicinity of the transfer arm 24 as long as the operation of the transfer arm 24 is not hindered, and the upper portion of the support arm 32 is bent in a substantially square shape toward the upper side of the transfer arm 24. By making the shape as described above, the heater 33 can be substantially opposed to the transfer arm 24 and the wafer W supported thereon. The heater 33 is arranged in the direction as shown in FIG. 3A and has a shape extending along the direction in which the pick 25 moves as the transfer arm 24 extends, that is, the direction perpendicular to the guide rail 21. Thus, when the transport arm 24 is shortened and the pick 25 is positioned on the base 23, almost the entire transport arm 24 can be heated. It is also preferable to be able to change the bending angle of the support arm 32 in terms of facilitating adjustment of the heating amount.

  Specifically, the heater 33A shown in FIG. 9A is employed as the heater 33 in the present embodiment. This is a heater body 33a having a rectangular parallelepiped shape, in which one heating lamp 33b having a substantially cylindrical shape is attached along the extending direction of the heater body 33a. Heat is generated by applying a current through 94, and the wafer W can be heated mainly by radiant heat.

  In addition, the heater 33B shown in FIG.9 (b) and the heater 33C shown in FIG.9 (c) can also be used. The heater 33B includes a plurality of small heating lamps 33c each having a bulb shape along the extending direction in the heater body 33a. Moreover, the heater 33C has a heating wire 33d that is coiled along the extending direction inside the heater body 33a. Even if the heaters 33B and 33C having these structures are used, the wafer W can be heated by generating a current by passing an electric current as in the above-described heater 33A. Furthermore, it is also preferable to improve efficiency by heating only an object in a specific direction while preventing diffusion of heat by providing a reflector inside the heater body 33a.

  In order to control the main body 11 of the EFEM 1 including the wafer transfer device 2 described above, the EFEM 1 includes a control means 9 as shown in FIG. The control means 9 is composed of a normal microprocessor or the like having a CPU, a memory, and an interface. The memory stores a program necessary for processing in advance, and the CPU sequentially extracts and executes the necessary program. In addition, the desired functions are realized in cooperation with peripheral hardware resources.

  The control means 9 is configured to include a movable table position control unit 91, an arm position control unit 92, a lift position control unit 93, and a heating control unit 94.

  The movable table position control unit 91 can move the moving chamber 3 along the guide rail 21 by giving a driving command to a driving means (not shown) and stop it at an arbitrary position. The arm position control unit 92 gives a drive command to an actuator (not shown) provided in the base 23, thereby changing the direction of the transfer arm 24 and extending or shortening it to an arbitrary length. Can be made. The raising / lowering position control part 93 can raise / lower the conveyance arm 24 by giving a drive command to the raising / lowering actuator (not shown) incorporated in the base 23, and can make it the arbitrary height position. . The heating control unit 94 energizes the heater 33 constituting the heating means 3 and controls its current or voltage. In addition to heating by the heater 33 and stopping of the heating, the heating amount per unit time It is possible to change.

  By operating the wafer transfer apparatus 2 configured as described above under the control of the control unit 9, the wafer W can be transferred as follows. Here, as an example, a case where the wafer W is transferred from the FOUP 62 connected to the load port 61 which is one delivery position to the load lock chamber 81 will be described.

  First, as shown in FIG. 4, the wafer transfer device 2 moves the movable table 22 based on a drive command from the movable table position control unit 91, and the load on which the FOUP 62 that accommodates the wafer W to be transferred is placed. The transfer arm 24 is opposed to the port 61.

  Next, the door 61a of the load port 61 and the lid portion 62a of the FOUP 62 are opened according to a command from the control means 9, and the pick-up 25 at the tip of the transfer arm 24 is transferred by the lift position control unit 93. It is located slightly below. Then, as shown in FIG. 5, the transfer arm 24 is extended by the arm position control unit 92, thereby causing the tip of the transfer arm 24 to enter the FOUP 62. At this time, the pick 25 enters with a slight gap immediately below the wafer W. Further, the lift arm control unit 93 raises the transfer arm 24 to lift the wafer W and support it on the pick 25.

  From this state, the arm position control unit 92 shortens the transfer arm 24, whereby the pick 25 and the wafer W placed thereon are placed on the base 23 facing the heater 33 as shown in FIG. It is designed to move to a position. Since the heater 33 is configured to extend in the direction in which the wafer W is moved by the transfer arm 24, the heating control unit is configured to draw the wafer W from the FOUP 62 and reach the position on the base 23. By energizing the heater 33 by 94, the wafer W can be heated while moving below the heater 33, and a further heating time can be secured. In addition, when it takes time to raise the temperature of the heater 33, it may be set so that the start of energization to the heater 33 is appropriately advanced in anticipation of the temperature raising time.

  After the wafer W is taken out from the FOUP 62, the door 61a of the load port 61 and the lid 62a of the FOUP 62 are closed to keep the inside of the FOUP 62 as clean as possible. Furthermore, in order to compensate for nitrogen flowing out from the inside of the FOUP 62, it is also preferable to supply new nitrogen gas from the load port 61 into the FOUP 62 after closing the lid 62a.

  Then, while continuing the heating by the heater 33, as shown in FIG. 7, the movable base 22 is moved based on the drive command from the movable base position control section 91, and the direction of the transfer arm 24 is controlled by the arm position control section 92. And the transfer arm 24 is made to face the load lock chamber 81. The movement of the movable table 22 and the change of the direction of the transfer arm 24 may be performed simultaneously. During the movement of the movable table 22 and the change of the direction of the transfer arm 24, the surface of the wafer W is heated by the heater 33, thereby sufficiently increasing the temperature of the wafer W and removing moisture adhering to the surface. can do. When the heating is sufficiently performed during the movement, the heating of the wafer W by the heater 33 may be stopped in the middle, or the current value may be decreased to reduce the heating amount per unit time. Of course, when it is necessary to raise the temperature of the wafer W further or when it is desired to ensure the heating time, the next operation is performed until a predetermined amount of heating is performed while the wafer W is moved below the heater 33. You may not make it transfer to. In order to strictly control the temperature of the wafer W, a non-contact type temperature detector is provided at a position facing the wafer W, or a contact type temperature detector is provided in the pick 25. The controller 9 may be configured to perform control based on the detected temperature data.

  From the above state, as shown in FIG. 8, the door 81a (see FIG. 7) of the load lock chamber 81 is opened, and the transfer arm 24 is moved to the load lock chamber 81 side based on a drive command from the arm position control unit 92. The pick 25 and the wafer W are caused to enter the load lock chamber 81. Further, the transfer arm 24 is moved down by a command from the lift position controller 93, so that the wafer W is transferred from the pick 25 onto a mounting table (not shown) in the load lock chamber 81.

  As described above, by using this wafer transfer device 2, the wafer W can be heated by the heater 33 while the wafer W is transferred from the FOUP 62 to the load lock chamber 81, and moisture is removed from the surface of the wafer W. Thus, corrosion and oxidation of the wafer W due to moisture can be suppressed, and the surface properties can be properly maintained.

  Further, when the wafer W is transported from the load lock chamber 81 to the FOUP 62, similarly, heating can be performed while the wafer W is transported by performing the above-described operation in reverse. By doing so, it is possible to optimize the surface properties of the wafer W by suppressing the removal of moisture and the adhesion of new moisture.

  Furthermore, depending on the processing performed on the wafer W in the processing apparatus 8, the surface property of the wafer W can be optimized by using the heater 33 for heat processing performed as pre-processing or post-processing. Specifically, when the processing temperature in the processing apparatus 8 is high, it is possible to reduce the processing time in the processing unit 83 and improve the processing speed by heating the wafer W in advance. Become. Further, when a corrosive gas or a contaminant substance adheres to the surface of the wafer W by the processing by the processing apparatus 8, the wafer W can be heated or evaporated from the surface. Furthermore, the surface state may be stabilized by heating as a post-treatment. By utilizing in this way, it is also possible to shorten the processing time in the processing apparatus 8 and to reduce the installation space of the entire equipment including the processing apparatus.

  As described above, the wafer transfer apparatus 2 as the substrate transfer apparatus in the present embodiment includes the movable base 22 that is a base that is movable along the guide rail 21 that constitutes a predetermined track, and the movable base 22. And a transfer arm 24 that holds the wafer W as a substrate and transfers the wafer W, and a heater 33 that is supported by the movable base 22 and disposed at a position that can be opposed to the transfer arm 24. When the wafer W is transported by the arm 24, the surface of the wafer W can be heated by the heater 33.

  Since it is configured in this manner, the wafer W held by the transfer arm 24 can be heated by the heater 33 while the wafer W is transferred, and moisture adhering to the surface of the wafer W is removed. Changes in surface properties can be suppressed. In addition, it can be used as a heat treatment performed before and after the processing performed on the wafer W in the processing apparatus 8 at the transfer destination, and it is possible to shorten the processing time of the wafer W and the installation space of the processing apparatus 8. .

  Further, since the heater 33 is configured to extend along the moving direction of the wafer W by the transfer arm 24, the wafer W can be efficiently heated when the wafer W is transferred. .

  Furthermore, a load port 61 serving as a delivery position for delivering the wafer W adjacent to the wall surfaces 51a and 51b of the housing 51, and a load lock provided with the wafer transfer device 2 and a housing 51 covering the wafer transfer device 2 are provided. By configuring the chamber 81 to be set, the chamber 81 is effectively configured as the EFEM 1. According to the EFEM 1, the surface of the wafer W being transferred is heated using the wafer transfer device 2 provided in the housing 51, so that the surface properties can be stabilized by removing moisture or applied to the wafer W. When heat treatment is necessary before and after the treatment, this can be easily performed without adding special equipment.

Second Embodiment
FIG. 10 is a schematic diagram showing a wafer transfer apparatus 202 as a substrate transfer apparatus of the second embodiment and an EFEM 201 including the same. In this figure, the same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  The EFEM 201 includes a main body 211 and a control unit 9 that controls the main body 211, and a wafer transfer device 202 that configures the main body 211 includes a transfer arm 24 and a heating unit 203. The wafer transfer apparatus 202 in this embodiment is different from the first embodiment in the attachment structure of the heating means 203 to the movable base 222 as a base.

  The specific structure is shown in FIGS. FIG. 11 is an enlarged plan view showing a main part, FIG. 12 (a) is a front view, and FIG. 12 (b) is a side view. As shown in these figures, in this embodiment, the movable base 222 is made smaller than that in the first embodiment, and is configured in a substantially square shape in plan view. And the base 23 is provided in the center part. Further, the support base 231 is provided so as to protrude in the horizontal direction directly from the back side of the base 23, and the support arm 232 is raised from the support base 231. The support arm 232 has a shape in which the upper part is bent in a generally U shape toward the upper side of the transfer arm 24 and can be opposed to the wafer W holding the heater 33 on the transfer arm 24 at the upper end. Yes. With this configuration, the heater 33 is supported by the base 23 via the support arm 232 and indirectly supported by the movable base 222 via the base 23.

  Even in the case of such a configuration, it is possible to obtain the same effect as that of the first embodiment described above. Furthermore, since the support arm 232 is also raised and lowered as the base 23 is raised and lowered, the relative position between the wafer W and the heater 33 does not change even when the base 23 is raised and lowered, and heating is performed under the same conditions. Therefore, the heating condition can be easily set.

<Third Embodiment>
FIGS. 13 and 14 schematically show a wafer transfer device 302 as a substrate transfer device of the third embodiment, and the EFEM 301 is configured around the same as in the first and second embodiments. can do. FIGS. 13 (a) and 14 (a) are plan views showing enlarged main parts, and FIGS. 13 (b) and 14 (b) show these from the front and control means 309. It is the figure which shows the relationship. In these drawings, the same parts as those in the first embodiment and the second embodiment are denoted by the same reference numerals, and description thereof is omitted.

  The EFEM 301 includes a main body 311 and a control unit 309 that controls the main body 311, and a wafer transfer device 302 that forms the main body 311 includes a transfer arm 324 and a heating unit 303. The transfer arm 324 in this embodiment is configured as a multi-stage slide type arm robot in which a plurality of arm elements 324a to 324a are sequentially connected and a pick 25 is provided at the tip. Each of the arm elements 324a to 324a is configured to be slidable with respect to each other. By giving a drive command from the arm position control unit 92 to an actuator (not shown) for driving them, the entire transfer arm 324 is extended or shortened. It is possible. Of course, instead of the transfer arm 324, the transfer arm 25 (see FIG. 2) used in the first embodiment may be used.

  The present embodiment is mainly characterized in that the shape of the heater 333 constituting the heating means 303 is different from that in the first embodiment and the second embodiment. The support structure including the support arm 232 for supporting the heater 333 is configured in the same manner as in the second embodiment.

  The heater 333 has a shape that extends along the direction in which the pick 25 moves as the transfer arm 324 extends, that is, the direction orthogonal to the guide rail 21, and protrudes larger than the movable base 222 in a plan view. The portion is set close to the housing wall 51a on the load port 61 side. Although not shown in the figure, the other end of the heater 333 extends to a position close to the housing wall 51c (see FIG. 1) on the load lock chamber 81 side.

  For this reason, the main body 333a constituting the heater 333 is set to have an overall length slightly shorter than the distance between the opposing housing walls 51a and 51c (see FIG. 1), and a heating lamp as three heat generating portions is provided inside the main body 333a. 233b is arranged side by side in the extending direction. Each heating lamp 333b generates heat when a current is supplied from a heating control unit 394 constituting the control means 309. Further, the control unit 309 includes a heat generating unit switching unit 395 for switching the heating lamp 333 b that supplies current from the heating control unit 394.

  With the configuration described above, heating by the heater 333 can be performed immediately after the pick 25 enters the FOUP 62 and the wafer W is taken out of the FOUP 62 as shown in FIG. Since the wafer W can be continuously heated while the transfer arm 324 is shortened, it is possible to reduce the time during which moisture adheres to the wafer W and efficiently perform the heating. ing. Further, since the heater 333 extends to the load lock chamber 81 (see FIG. 1), the heating can be continued until just before the wafer W is put into the load lock chamber 81. These points are the same even when the wafer is taken out from the load lock chamber 81 and placed in the FOUP 62. As described above, since the wafer W can be heated most of the time for transporting the wafer W between the FOUP 62 and the load lock chamber 81, it is useless when it is necessary to secure a sufficient heating time. It is possible to save time by saving time.

  In addition, when the wafer W is transferred between the FOUP 62 and the load lock chamber 81, the heat generation switching unit 395 switches the heating lamps 333b to 333b to which current is supplied in accordance with the operation of the transfer arm 324. It is also possible to reduce energy consumption while appropriately heating the wafer W.

  Even when configured as described above, it is possible to obtain the same operational effects as those of the first and second embodiments described above.

  In particular, since the heater 33 is configured to extend longer along the moving direction of the wafer W by the transfer arm 24, the wafer W can be heated more efficiently when the wafer W is transferred. It is possible.

  Furthermore, the wafer transfer apparatus 302 as a substrate transfer apparatus in the present embodiment is configured by heating lamps 333b to 333b as a plurality of heat generating portions that generate heat when the heater 333 is energized, and the wafer W is transferred by the transfer arm 324. Since the heating lamp 333b that is energized in accordance with the movement is configured to be switchable, the wafer W can be efficiently heated while saving energy.

<Fourth embodiment>
FIG. 15 schematically shows a wafer transfer device 402 as a substrate transfer device of the fourth embodiment, and the EFEM 401 can be configured with the same as the first to third embodiments. FIG. 15A shows a state viewed from the front, and also shows a relationship with the control means 409, and FIG. 15B is a side view. In these drawings, the same parts as those in the first to third embodiments are denoted by the same reference numerals, and description thereof is omitted.

  The EFEM 401 includes a main body 411 and a control unit 409 that controls the main body 411, and a wafer transfer device 402 that constitutes the main body 411 includes a transfer arm 24 and a heating unit 403. The wafer transfer apparatus 402 in this embodiment is different from the first embodiment in the attachment structure of the heating means 403 to the movable table 22.

  Specifically, a support base 31 is provided on the movable base 22, a support column 432 is raised from the support base 31, and a rotation mechanism 434 is inclined at a predetermined angle. A support arm 435 is provided so as to protrude from the rotation mechanism 434, and the support arm 435 can be rotated about its central axis. Further, the heater 33 is supported by the tip of the support arm 435. The support column 432, the rotation mechanism, and the support arm 435 are bent in a generally U shape when viewed from the side, and the heater 33 can be opposed to the wafer W held by the pick 25 at the tip of the transfer arm 24. Has been.

  The rotation mechanism 434 incorporates an actuator (not shown), and the rotation angle of the support arm 435 can be changed in accordance with a drive command from the heater rotation control unit 496 constituting the control unit 409. The direction of the heater 33 can be changed as shown by the arrows in the figure.

  Therefore, the small heater 33 is used by changing the direction of the heater 33 in conjunction with the movement of the wafer W by the transfer arm W so that the heater 33 faces the direction of the wafer W. However, it is possible to ensure the heating time of the wafer W.

  Even when configured as described above, it is possible to obtain the same operational effects as those of the first and second embodiments described above.

  Furthermore, the wafer transfer apparatus 402 as the substrate transfer apparatus in the present embodiment is configured such that the heater 33 can change the direction in accordance with the movement of the wafer W by the transfer arm 24. At this time, the wafer W can be heated more efficiently.

<Fifth Embodiment>
FIGS. 16 and 17 schematically show a wafer transfer device 502 as a substrate transfer device of the fifth embodiment, and the EFEM 501 is configured around this point as in the first to fourth embodiments. Can do. FIG. 16 shows a state seen from a plane, and shows a relationship with the control means 509. FIG. 17 (a) is a front view and FIG. 17 (b) is a side view. In these drawings, the same parts as those in the first to fourth embodiments are denoted by the same reference numerals, and description thereof is omitted.

  The EFEM 501 includes a main body 511 and a control unit 509 that controls the main body 511, and a wafer transfer device 502 that configures the main body 511 includes a transfer arm 24 and a heating unit 503. The wafer conveyance device 502 in this embodiment is different from the first embodiment in the configuration of the heating means 503.

  Specifically, a support base 531 is provided on the movable base 22, a support arm 532 is raised from the support base 531, and the heater 33 is supported on the upper part thereof. The support arm 532 is bent in a generally U shape when viewed from the side, and is configured so that the heater 33 can be opposed to the wafer W held by the pick 25 at the tip of the transfer arm 24.

  Further, a support arm 536 is provided on the support base 531, and a blower fan 537 as a blower is provided at the tip of the support arm 536. The blower fan 537 has an oval shape having substantially the same overall length as that of the heater 33, the longitudinal direction thereof is aligned with the extending direction of the heater 33, and is opposed to the transport arm 24 with the heater 33 interposed therebetween. Arranged to get. By doing so, it is possible to blow air from behind the heater 33 toward the wafer W supported by the transfer arm 24.

  In addition to heating by the heater 33, air is blown toward the wafer W by the blower fan 537, thereby increasing the moisture removal effect from the wafer W and making the atmosphere around the wafer W uniform so that the wafer W In addition, the temperature of the surface of the wafer W can be made uniform.

  Further, the blower fan 537 can supply gas toward the wafer W by being connected to a gas supply source provided outside. By using dry nitrogen gas as this gas, the moisture removal effect can be enhanced, and the residual gas from the processing apparatus 8 can be eliminated to maintain the surface properties of the wafer W more appropriately. Of course, you may change the gas supplied according to a process.

  The blower fan 537 is controlled based on an operation command from the blower control unit 597 constituting the control unit 509. In addition to the start and stop of the operation, the blower control unit 597 controls the air volume and supplies gas from the outside. It is possible to perform on / off control. The control unit 509 includes a timing control unit 598 for controlling the operation timing of the heater 33 by the heating control unit 94 and the operation timing of the blower fan 537 by the blower control unit 597. The timing control unit 598 causes the heating control unit 94 and the ventilation control unit 597 to heat the wafer W, blow air toward the wafer W, and supply gas at a predetermined timing based on the timing data stored therein. Give an action command. The heating control unit 94 and the air blowing control unit 597 are configured to start or stop the control or change the control content in accordance with each given operation command, so that linked control can be performed. It has become.

  By performing interlocked control in this manner, the wafer W and the wafer W can be heated, blown, and supplied with gas at a timing suitable for the processing content in the processing apparatus 8 (see FIG. 1). The surface property of W can be maintained more appropriately. Furthermore, since it can be used as pre-processing or post-processing depending on the processing process, the processing efficiency can be improved.

  Even when configured as described above, it is possible to obtain the same operational effects as those of the first and second embodiments described above.

  Furthermore, the wafer transfer apparatus 502 as the substrate transfer apparatus in the present embodiment is configured to provide a blower fan 537 as a blower unit at a position that can face the transfer arm 24 with the heater 33 interposed therebetween. Therefore, it is possible to increase the efficiency of heating the wafer W and to make the atmosphere uniform by making the atmosphere around the wafer W uniform.

  Further, since the blower fan 537 is configured to be able to supply the gas obtained from the gas supply source toward the transfer arm 24, by supplying a gas suitable for the surface of the wafer W, heating by the heater 33 can be performed. Together, the surface properties of the wafer W can be optimized.

  And since it comprises so that the heater 33 and the timing control part 598 for controlling the operation timing of the ventilation fan 537 may be provided, the heating by the heater 33 and the supply of gas by the ventilation fan 537 are appropriate. By performing at the timing, the surface property of the wafer W can be further optimized while saving energy.

  The specific configuration of each unit is not limited to the above-described embodiment.

  For example, in the above-described embodiment, the wafer W is transferred between the FOUP 62 provided on the load port 61 and the load lock chamber 81. However, when the transfer between the FOUPs 62 and 62 is performed. Can also be used.

  Furthermore, in the above-described embodiment, the guide rail 21 constituting the predetermined track is formed in a straight line, and the movable base 22 is also moved along the straight line. However, the shape of the guide rail 21 is as follows. Without being limited thereto, the movable base 22 can be moved in the other direction as a combination of a plurality of straight lines and curves. Further, if the guide rail 21 is arranged so as to extend in the vertical direction, the movable base 22 can be moved in the vertical direction. As long as the movement direction of the movable table 22 can be regulated, the track can be configured not only by the guide rail 21 but also by other means such as a guide roller or a wire.

  And based on the wafer conveyance apparatus 402 in 4th Embodiment, instead of changing the direction of the heater 33 with the movement of the wafer W, the heater 33 moves while maintaining the state facing the wafer W. You may comprise. Furthermore, it is possible to achieve the same effect as described above by configuring the heater 33 to change both the direction and the movement.

  In the fifth embodiment described above, nitrogen gas is used as the gas supplied to the wafer W, but various gases such as air and ozone can be used depending on the processing. Also, clean air having a higher cleanliness than in the wafer transfer chamber 5 can be used.

  In the above-described embodiment, the heaters 33 and 333 are configured to heat the object using a heating lamp or a heating wire, but a ceramic heater, a heating element, hot air introduced from the outside, or the like Various heat sources other than those described above may be used, and even in such a case, effects similar to the above can be obtained.

  Furthermore, in the above-described embodiment, it is assumed that the wafer W is used as the substrate. However, the present invention can be used for a substrate transfer apparatus for various precision processed products such as a glass substrate.

  Other configurations can be variously modified without departing from the spirit of the present invention.

1 ... EFEM
2, 202, 302, 402, 502 ... Wafer transfer device (substrate transfer device)
DESCRIPTION OF SYMBOLS 5 ... Wafer transfer chamber 8 ... Processing apparatus 9 ... Control means 21 ... Guide rail (track)
22 ... Movable stand (base)
24, 324 ... transport arm 25 ... pick 33 ... heater 51 ... housing 51a-51d ... housing wall (wall surface)
61 ... Load port (delivery position)
81 ... Load lock room (delivery position)
333b ... Heating lamp (heating part)
537 ... Blower fan (blower means)
598 ... Timing control unit W ... Wafer (substrate)

Claims (8)

A base that is movable along a predetermined trajectory;
A transfer arm supported by the base and holding and transferring the substrate;
A heater supported by the base and disposed at a position that can be opposed to the transfer arm;
When the substrate is transported by the transport arm, the substrate surface is configured to be heated by the heater,
The substrate transport apparatus, wherein the heater is configured to extend along a moving direction of the substrate by the transport arm.   The heating unit is configured by a plurality of heating units that generate heat when energized, and the heating unit that is energized according to the movement of the substrate by the transfer arm is configured to be switchable. Substrate transfer device. A base that is movable along a predetermined trajectory;
A transfer arm supported by the base and holding and transferring the substrate;
A heater supported by the base and disposed at a position that can be opposed to the transfer arm;
When the substrate is transported by the transport arm, the substrate surface is configured to be heated by the heater,
The substrate transport apparatus, wherein the heater is configured to be able to change at least one of a position and a direction according to movement of the substrate by the transport arm. A base provided in the substrate transfer chamber;
A transfer arm supported by the base and holding and transferring the substrate;
When transporting the substrate by the transport arm , the heater surface is configured to be able to heat the substrate surface in order to suppress moisture adhesion on the substrate surface,
Further, a substrate transfer apparatus characterized in that a gas can be supplied to the substrate surface by providing a blowing means at a position that can be opposed to the transfer arm with the heater interposed therebetween.   The substrate transfer apparatus according to claim 4, wherein the gas is a dry nitrogen gas.   6. The substrate transfer apparatus according to claim 4, wherein the base is movable by a guide rail.   7. The substrate transfer apparatus according to claim 4, wherein the blowing unit is configured to be able to supply the gas obtained from a gas supply source toward the transfer arm.   A board transfer device according to any one of claims 1 to 7 and a casing covering the board transport apparatus, and a delivery position for delivering the board is set adjacent to a wall surface of the casing. EFEM.

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