JP6289822B2 - 発光装置及び電子機器 - Google Patents

発光装置及び電子機器 Download PDF

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Publication number
JP6289822B2
JP6289822B2 JP2013113324A JP2013113324A JP6289822B2 JP 6289822 B2 JP6289822 B2 JP 6289822B2 JP 2013113324 A JP2013113324 A JP 2013113324A JP 2013113324 A JP2013113324 A JP 2013113324A JP 6289822 B2 JP6289822 B2 JP 6289822B2
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Japan
Prior art keywords
film
light
transistor
oxide semiconductor
oxide
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Expired - Fee Related
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JP2013113324A
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English (en)
Japanese (ja)
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JP2014006519A (ja
JP2014006519A5 (enExample
Inventor
英明 宍戸
英明 宍戸
岡崎　健一
健一 岡崎
宮本　敏行
敏行 宮本
野村　昌史
昌史 野村
貴士 羽持
貴士 羽持
山崎　舜平
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013113324A priority Critical patent/JP6289822B2/ja
Publication of JP2014006519A publication Critical patent/JP2014006519A/ja
Publication of JP2014006519A5 publication Critical patent/JP2014006519A5/ja
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Publication of JP6289822B2 publication Critical patent/JP6289822B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Control Of El Displays (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2013113324A 2012-05-31 2013-05-29 発光装置及び電子機器 Expired - Fee Related JP6289822B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013113324A JP6289822B2 (ja) 2012-05-31 2013-05-29 発光装置及び電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012124179 2012-05-31
JP2012124179 2012-05-31
JP2013113324A JP6289822B2 (ja) 2012-05-31 2013-05-29 発光装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2014006519A JP2014006519A (ja) 2014-01-16
JP2014006519A5 JP2014006519A5 (enExample) 2016-06-30
JP6289822B2 true JP6289822B2 (ja) 2018-03-07

Family

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Family Applications (1)

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JP2013113324A Expired - Fee Related JP6289822B2 (ja) 2012-05-31 2013-05-29 発光装置及び電子機器

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JP (1) JP6289822B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106463090B (zh) * 2014-05-09 2019-11-01 株式会社日本有机雷特显示器 显示装置、显示装置的驱动方法和电子设备
KR102333604B1 (ko) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
TWI849490B (zh) 2014-05-30 2024-07-21 日商半導體能源研究所股份有限公司 發光元件，發光裝置，電子裝置以及照明裝置
JP6284636B2 (ja) * 2014-06-10 2018-02-28 シャープ株式会社 表示装置およびその駆動方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5511157B2 (ja) * 2008-07-03 2014-06-04 キヤノン株式会社 発光表示装置
WO2011027701A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
JP2011086726A (ja) * 2009-10-14 2011-04-28 Fujifilm Corp 薄膜トランジスタ基板並びにそれを備えた有機電界発光表示装置及びｘ線撮像装置
DE112011101410B4 (de) * 2010-04-23 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
US8629438B2 (en) * 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101862808B1 (ko) * 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5969745B2 (ja) * 2010-09-10 2016-08-17 株式会社半導体エネルギー研究所 半導体装置
US20120064665A1 (en) * 2010-09-13 2012-03-15 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus, apparatus for successive deposition, and method for manufacturing semiconductor device

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Publication number Publication date
JP2014006519A (ja) 2014-01-16

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