JP6281835B2 - 太陽電池用化合物半導体ナノ粒子の作製方法 - Google Patents
太陽電池用化合物半導体ナノ粒子の作製方法 Download PDFInfo
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- JP6281835B2 JP6281835B2 JP2013185403A JP2013185403A JP6281835B2 JP 6281835 B2 JP6281835 B2 JP 6281835B2 JP 2013185403 A JP2013185403 A JP 2013185403A JP 2013185403 A JP2013185403 A JP 2013185403A JP 6281835 B2 JP6281835 B2 JP 6281835B2
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- xanthate
- metal sulfide
- metal
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- 239000002105 nanoparticle Substances 0.000 title claims description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 239000004065 semiconductor Substances 0.000 title description 34
- 150000001875 compounds Chemical class 0.000 title description 17
- 239000012991 xanthate Substances 0.000 claims description 171
- ZOOODBUHSVUZEM-UHFFFAOYSA-N ethoxymethanedithioic acid Chemical compound CCOC(S)=S ZOOODBUHSVUZEM-UHFFFAOYSA-N 0.000 claims description 166
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 75
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 74
- 239000010949 copper Substances 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 56
- 230000031700 light absorption Effects 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 42
- 239000002904 solvent Substances 0.000 claims description 34
- 239000011701 zinc Substances 0.000 claims description 32
- 239000002131 composite material Substances 0.000 claims description 29
- 239000012298 atmosphere Substances 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 239000011261 inert gas Substances 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 150000004696 coordination complex Chemical class 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical group ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 5
- 229960001701 chloroform Drugs 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000000935 solvent evaporation Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 55
- 238000002441 X-ray diffraction Methods 0.000 description 46
- 239000011135 tin Substances 0.000 description 34
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 24
- 238000011156 evaluation Methods 0.000 description 22
- 239000011669 selenium Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 13
- 239000000843 powder Substances 0.000 description 13
- 239000002994 raw material Substances 0.000 description 12
- -1 Chalcopyrite compound Chemical class 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 11
- 229910052717 sulfur Inorganic materials 0.000 description 11
- 229910007610 Zn—Sn Inorganic materials 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 238000002411 thermogravimetry Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 229910052711 selenium Inorganic materials 0.000 description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 229910017932 Cu—Sb Inorganic materials 0.000 description 5
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- 229910001432 tin ion Inorganic materials 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052951 chalcopyrite Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 239000002082 metal nanoparticle Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 150000003346 selenoethers Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000004729 solvothermal method Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002772 conduction electron Substances 0.000 description 3
- ROOIMEGRNKABEH-UHFFFAOYSA-M copper(1+);ethoxymethanedithioate Chemical compound [Cu+].CCOC([S-])=S ROOIMEGRNKABEH-UHFFFAOYSA-M 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 244000061520 Angelica archangelica Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical group [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- PUSQPMUOFLKEIC-UHFFFAOYSA-N [S-2].[Al+3].[Cu+2] Chemical compound [S-2].[Al+3].[Cu+2] PUSQPMUOFLKEIC-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical class C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- MHGONGPZRHODOR-UHFFFAOYSA-L copper;ethoxymethanedithioate Chemical compound [Cu+2].CCOC([S-])=S.CCOC([S-])=S MHGONGPZRHODOR-UHFFFAOYSA-L 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- IQYICWIZYYZVFP-UHFFFAOYSA-K ethoxymethanedithioate indium(3+) Chemical compound [In+3].CCOC([S-])=S.CCOC([S-])=S.CCOC([S-])=S IQYICWIZYYZVFP-UHFFFAOYSA-K 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-M hydrosulfide Chemical compound [SH-] RWSOTUBLDIXVET-UHFFFAOYSA-M 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- JCBJVAJGLKENNC-UHFFFAOYSA-M potassium ethyl xanthate Chemical compound [K+].CCOC([S-])=S JCBJVAJGLKENNC-UHFFFAOYSA-M 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
ソルボサーマル法は、エチレンジアミン等の有機溶媒中において高圧下で複数の原料物質を反応させて、反応生成物の結晶を得る方法であり、Cu源とZn源とSn源とを、種々のモル数の硫黄粉末と一緒に有機溶媒に分散させ、オートクレーブに充填して30分間撹拌する。Cu源,Zn源及びSn源は、金属の形態であっても塩の形態であってもよい。得られた生成物を濾過し、大気中、50℃、22時間の条件で乾燥処理し硫化物系化合物半導体(CZTS)粒子を得ている
一般式(1)
一般式(2)
一般式(3)
一般式(4)
(実施例1)
(実施例2)
(実施例3)
12 金属キサンテートの熱重量分析結果
20 反応前の各金属キサンテートの状態
22 Cuキサンテート
24 Znキサンテート
26 Snキサンテート
28 Inキサンテート
34 加熱反応後の各金属キサンテートの状態
40 Cuキサンテートの加熱反応後のXRD評価結果
42 Znキサンテートの加熱反応後のXRD評価結果
44 Inキサンテートの加熱反応後のXRD評価結果
46 Snキサンテートの加熱反応後のXRD評価結果
60 複合金属硫化物ナノ粒子の作製方法
72 Cu−Inキサンテートの熱重量分析結果
74 Cu−Inキサンテートの加熱反応後のXRD測定結果
76 Cu−Sbキサンテートの加熱反応後のXRD測定結果
80 Cu−Zn−Snキサンテートの加熱反応後のXRD測定結果
82 溶解液を利用した複合金属硫化物ナノ粒子の作製方法
84 溶解液としたCu−Inキサンテートの加熱反応後のXRD測定結果
86 溶解液としたCu−Zn−Snキサンテートの加熱反応後のXRD測定結果
88 金属硫化物ナノ粒子を用いた光吸収層の作製方法
Claims (13)
- キサンテートを配位した金属錯体から太陽電池の光吸収層形成に使用する金属硫化物ナノ粒子を作製する方法において、
キサンテートを配位した金属錯体単体を、不活性雰囲気下で加熱すること、
を特徴とする金属硫化物ナノ粒子作製方法 - 請求項1に記載の金属硫化物ナノ粒子作製方法において、
前記金属錯体の金属原子は、銅、亜鉛、インジウム、スズのいずれかであること、
を特徴とする金属硫化物ナノ粒子作製方法。 - 請求項2に記載の金属硫化物ナノ粒子作製方法において、
銅を原子とする金属錯体の分子式は、
一般式(1)
であることを特徴とする金属硫化物ナノ粒子作製方法。 - 請求項2に記載の金属硫化物ナノ粒子作製方法において、
亜鉛を原子とする金属錯体の分子式は、
一般式(2)
- 請求項2に記載の金属硫化物ナノ粒子作製方法において、
スズを原子とする金属錯体の分子式は、
一般式(3)
であることを特徴とする金属硫化物ナノ粒子作製方法。 - 請求項2に記載の金属硫化物ナノ粒子作製方法において、
インジウムを原子とする金属錯体の分子式は、
一般式(4)
であることを特徴とする金属硫化物ナノ粒子作製方法。 - 請求項1に記載の金属硫化物ナノ粒子作製方法において、
加熱温度は、100℃〜300℃であること、
を特徴とする金属硫化物ナノ粒子作製方法。 - 請求項1に記載の金属硫化物ナノ粒子作製方法において、
前記不活性ガスは、窒素、アルゴン、ヘリウムのいずれかであること、
を特徴とする金属硫化物ナノ粒子作製方法。 - 請求項1に記載の金属硫化物ナノ粒子作製方法において、
前記金属錯体を複数混合して、不活性雰囲気下で加熱し、複合金属の硫化物を作製すること、
を特徴とする金属硫化物ナノ粒子作製方法。 - 請求項9に記載の金属硫化物ナノ粒子作製方法において、
前記金属錯体を複数混合して溶媒に溶かし、溶解液とした後に不活性雰囲気下で70℃〜80℃で溶媒を蒸発させる工程を含んで加熱し、溶媒蒸発後に加熱すること、
を特徴とする金属硫化物ナノ粒子作製方法。 - 請求項10に記載の金属硫化物ナノ粒子作製方法において、
前記溶媒は、トリクロロメタンであること、
を特徴とする金属硫化物ナノ粒子作製方法。 - 請求項10に記載の金属硫化物ナノ粒子作製方法において、
前記溶媒は、テトラヒドロフロンであること、
を特徴とする金属硫化物ナノ粒子作製方法。 - 請求項1又は9に記載の金属硫化物ナノ粒子作製方法により作成された金属硫化物ナノ粒子を溶媒に溶解または分散させて塗布液とする工程と、
前記塗布液を、基板に形成された電極上に塗布する工程と、
前記基板を加熱焼成する工程と、
から成ることを特徴とする太陽電池の光吸収層形成方法。
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