JP6258599B2 - 応力隔離ｍｅｍｓ構造および製造方法 - Google Patents

応力隔離ｍｅｍｓ構造および製造方法 Download PDF

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Publication number
JP6258599B2
JP6258599B2 JP2013087058A JP2013087058A JP6258599B2 JP 6258599 B2 JP6258599 B2 JP 6258599B2 JP 2013087058 A JP2013087058 A JP 2013087058A JP 2013087058 A JP2013087058 A JP 2013087058A JP 6258599 B2 JP6258599 B2 JP 6258599B2
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Prior art keywords
diaphragm
substrate
backing
mems
wafer
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Japanese (ja)
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JP2013224937A (ja
JP2013224937A5 (enExample
Inventor
ポタセック，デイビッド・ピー．
クリステンソン，ジョン・シー．
サターランド，ブルース・エイチ．
フィリップス，ランディー
ホームクィスト，デイブ
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Rosemount Aerospace Inc
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Rosemount Aerospace Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/48147—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP2013087058A 2012-04-20 2013-04-18 応力隔離ｍｅｍｓ構造および製造方法 Active JP6258599B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/451,790 2012-04-20
US13/451,790 US9010190B2 (en) 2012-04-20 2012-04-20 Stress isolated MEMS structures and methods of manufacture

Publications (3)

Publication Number Publication Date
JP2013224937A JP2013224937A (ja) 2013-10-31
JP2013224937A5 JP2013224937A5 (enExample) 2016-06-09
JP6258599B2 true JP6258599B2 (ja) 2018-01-10

Family

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Family Applications (1)

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JP2013087058A Active JP6258599B2 (ja) 2012-04-20 2013-04-18 応力隔離ｍｅｍｓ構造および製造方法

Country Status (3)

Country Link
US (1) US9010190B2 (enExample)
EP (1) EP2653443B1 (enExample)
JP (1) JP6258599B2 (enExample)

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JP6150249B2 (ja) * 2013-02-25 2017-06-21 京セラ株式会社 電子デバイスのガラス封止方法
US8701496B1 (en) 2013-02-27 2014-04-22 Honeywell International Inc. Systems and methods for a pressure sensor having a two layer die structure
US20140260650A1 (en) * 2013-03-15 2014-09-18 Silicon Microstructures, Inc. Silicon plate in plastic package
US10151647B2 (en) 2013-06-19 2018-12-11 Honeywell International Inc. Integrated SOI pressure sensor having silicon stress isolation member
ITTO20130539A1 (it) * 2013-06-28 2014-12-29 Stmicroelectronics International N V Dispositivo mems incorporante un percorso fluidico e relativo procedimento di fabbricazione
WO2015015253A1 (en) * 2013-08-01 2015-02-05 Honeywell Romania Srl Condensation sensor systems and methods
EP2871455B1 (en) * 2013-11-06 2020-03-04 Invensense, Inc. Pressure sensor
EP2871456B1 (en) 2013-11-06 2018-10-10 Invensense, Inc. Pressure sensor and method for manufacturing a pressure sensor
US9431315B2 (en) * 2013-12-26 2016-08-30 Agency For Science, Technology And Research Chemical sensor package for highly pressured environment
US20160052784A1 (en) * 2014-08-25 2016-02-25 Rosemount Aerospace Inc. Mems devices and method of manufacturing
JP6398806B2 (ja) * 2015-03-12 2018-10-03 オムロン株式会社 センサパッケージ
EP3614115B1 (en) 2015-04-02 2024-09-11 InvenSense, Inc. Pressure sensor
US9963341B2 (en) * 2015-05-19 2018-05-08 Rosemount Aerospace, Inc. Pressure sensor package with stress isolation features
US10278281B1 (en) * 2015-10-30 2019-04-30 Garmin International, Inc. MEMS stress isolation and stabilization system
US9878904B1 (en) * 2016-10-25 2018-01-30 Rosemount Aerospace Inc. MEMS sensor with electronics integration
US10481025B2 (en) * 2017-01-26 2019-11-19 Rosemount Aerospace Inc. Piezoresistive sensor with spring flexures for stress isolation
US10036676B1 (en) * 2017-03-15 2018-07-31 Honeywell International Inc. Microelectromechanical systems (MEMS) force die with buried cavity vented to the edges
EP3444609A1 (en) 2017-08-14 2019-02-20 Sensirion AG Measuring concentrations of a target gas
US11225409B2 (en) 2018-09-17 2022-01-18 Invensense, Inc. Sensor with integrated heater
CN109738098A (zh) * 2018-12-29 2019-05-10 菲比蓝科技(深圳)有限公司 压力传感器及其形成方法
EP3969868A1 (en) 2019-05-17 2022-03-23 InvenSense, Inc. A pressure sensor with improve hermeticity
IT202000003862A1 (it) * 2020-02-25 2021-08-25 St Microelectronics Srl Dispositivo a semiconduttore per il rilevamento ambientale includente una cavita' accoppiabile al mondo esterno e una struttura di filtraggio meccanico e corrispondente procedimento di fabbricazione
US11573145B2 (en) * 2020-03-31 2023-02-07 Rosemount Aerospace Inc. Capacitive MEMS pressure sensor and method of manufacture
US11981560B2 (en) 2020-06-09 2024-05-14 Analog Devices, Inc. Stress-isolated MEMS device comprising substrate having cavity and method of manufacture
US11656138B2 (en) * 2020-06-19 2023-05-23 Rosemount Inc. Pressure sensor assembly
US11879800B2 (en) * 2021-03-29 2024-01-23 Rosemount Aerospace Inc. MEMS strain gauge pressure sensor with mechanical symmetries
US11692895B2 (en) * 2021-03-30 2023-07-04 Rosemount Aerospace Inc. Differential pressure sensor
CN113049172B (zh) * 2021-04-14 2025-04-04 明晶芯晟(成都)科技有限责任公司 一种多通道压力测量单元及压力测量装置
CN113607328B (zh) * 2021-09-08 2025-04-01 星科金朋半导体（江阴）有限公司 一种mems封装结构及其制造方法
CN216453371U (zh) * 2021-11-24 2022-05-10 瑞声声学科技(深圳)有限公司 电子烟
CN114101831B (zh) * 2021-12-20 2022-11-01 浙江亚通焊材有限公司 传感器基座及基座钎焊方法
CN115479719B (zh) * 2022-10-10 2025-08-12 无锡莱斯能特科技有限公司 一种绝对压力传感器封装结构
US20240302237A1 (en) * 2023-03-08 2024-09-12 Rosemount Aerospace Inc. High temperature piezo-resistive pressure sensor and packaging assembly therefor
CN119178548A (zh) * 2024-09-21 2024-12-24 华东光电集成器件研究所 一种mems差压传感器芯片结构及制备方法

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FR2664979B1 (fr) * 1990-07-20 1992-11-06 Sextant Avionique Micro-capteur de pression.
US5483834A (en) 1993-09-20 1996-01-16 Rosemount Inc. Suspended diaphragm pressure sensor
JPH0933371A (ja) * 1995-07-25 1997-02-07 Yokogawa Electric Corp 半導体圧力計
DE69706213T2 (de) * 1996-04-04 2002-05-16 Ssi Technologies, Inc. Druckmessgerät und Verfahren zu seiner Herstellung
JP2002082009A (ja) * 2000-06-30 2002-03-22 Denso Corp 圧力センサ
DE102004011203B4 (de) * 2004-03-04 2010-09-16 Robert Bosch Gmbh Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung
EP1826543B1 (en) * 2006-02-27 2011-03-30 Auxitrol S.A. Stress isolated pressure sensing die
US8230745B2 (en) * 2008-11-19 2012-07-31 Honeywell International Inc. Wet/wet differential pressure sensor based on microelectronic packaging process

Also Published As

Publication number Publication date
US9010190B2 (en) 2015-04-21
EP2653443A3 (en) 2016-01-27
US20130276544A1 (en) 2013-10-24
EP2653443A2 (en) 2013-10-23
JP2013224937A (ja) 2013-10-31
EP2653443B1 (en) 2017-08-23

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