JP6239970B2 - TO-CAN type package header and semiconductor device - Google Patents

Description

  The present invention relates to a TO-CAN type package header and a semiconductor device using the header.

  2. Description of the Related Art A semiconductor device that houses semiconductor elements such as LDs (Laser Diodes) and PDs (Photo Diodes) used in conventional optical communication devices is provided with a plurality of lead terminals that penetrate the substrate. Are known (for example, see Patent Document 1). Such a semiconductor device is a so-called TO-CAN type semiconductor element housing package (also referred to as a TO-CAN type package for short).

  In the TO-CAN type package, a portion composed of a substrate and a plurality of lead terminals penetrating the substrate is called a header, and a lid for sealing a semiconductor element mounted on the header is called a cap. Here, a semiconductor device in which a semiconductor element is mounted on a header and a lid for sealing the semiconductor element is referred to as a semiconductor device.

  A header in which a plurality of lead terminals are fixed to one through hole has been developed (for example, see Patent Document 2). In the technique disclosed in Patent Document 2, the size of the header itself can be reduced by providing one through hole in the substrate and providing a plurality of lead terminals in the through hole.

JP 2004-259962 A JP 2011-1000078 A

  By the way, in the technique disclosed in Patent Document 2, when a high-frequency electric signal (hereinafter also referred to as a high-frequency signal) is input / output to / from the lead terminals, the distance between the lead terminals is shortened. There is an increased risk of electrical interference due to the electromagnetic field distribution generated by the high-frequency signal. As a result, it may be difficult to achieve a desired frequency characteristic.

  The present invention has been made in view of the above problems, and an object thereof is to provide a header for a TO-CAN type package and a semiconductor device capable of realizing a desired frequency characteristic.

A TO-CAN type package header according to an embodiment of the present invention has a top surface and a bottom surface, a substrate in which a through hole is formed from the top surface to the bottom surface, and a rod shape that passes through the through hole, A plurality of lead terminals having one end positioned above the upper surface and the other end positioned below the lower surface are filled in the through-hole so that the plurality of lead terminals do not contact each other. A first insulating member that fixes a plurality of lead terminals to the substrate; and a second insulating member that is provided between the plurality of lead terminals located on the substrate , the second insulating member comprising: The first lead terminal and the second lead, which are made of a glass material and are provided from the first lead terminal to the second lead terminal different from the first lead terminal among the plurality of lead terminals. The intermediate portion of the child, characterized in that recessed downward.
A TO-CAN type package header according to an embodiment of the present invention has a top surface and a bottom surface, a substrate in which a through hole is formed from the top surface to the bottom surface, and a rod shape that passes through the through hole, A plurality of lead terminals having one end positioned above the upper surface and the other end positioned below the lower surface are filled in the through-hole so that the plurality of lead terminals do not contact each other. A first insulating member having a plurality of lead terminals fixed to the substrate; and a second insulating member provided between the plurality of lead terminals located on the substrate, wherein the second insulating member comprises: It is a frame having an outer edge corresponding to the outer edge of the through hole in plan view.

  A semiconductor device according to an embodiment of the present invention includes the TO-CAN type package header, a semiconductor element mounted on the substrate, and a lid provided on the substrate and encapsulating the semiconductor element. It is characterized by having.

  ADVANTAGE OF THE INVENTION According to this invention, the header for TO-CAN type | mold packages and semiconductor device which can implement | achieve a desired electrical property can be provided.

It is a semiconductor device concerning one embodiment of the present invention, and is an appearance perspective view in the state where a lid was transparent. 1 is an external perspective view of a TO-CAN type package header according to an embodiment of the present invention. It is a TO-CAN type package header according to an embodiment of the present invention, and is an external perspective view in a state where a second insulating member is transparent. It is the external appearance perspective view which showed the lower surface of the header for TO-CAN type packages which concerns on one Embodiment of this invention. It is a top view of the header for TO-CAN type | mold packages which concerns on one Embodiment of this invention. It is a side view of the header for TO-CAN type packages concerning one embodiment of the present invention. It is sectional drawing of the header for TO-CAN type | mold packages which concerns on one Embodiment of this invention. It is an external appearance perspective view of the header for TO-CAN type packages concerning one modification. It is an external appearance perspective view of the header for TO-CAN type packages concerning one modification. It is an external appearance perspective view of the header for TO-CAN type packages concerning one modification.

  Embodiments of a semiconductor device and a TO-CAN type package header (hereinafter also simply referred to as a header) according to the present invention will be described below with reference to the accompanying drawings. In addition, this invention is not limited to the following embodiment.

<Configuration of semiconductor device>
FIG. 1 is an external perspective view of the semiconductor device according to the present embodiment, and shows the inside through a lid (hereinafter also simply referred to as a cap). FIG. 2 is an external perspective view of a header used in the semiconductor device of FIG. FIG. 3 is an external perspective view of the header through the second insulating member of FIG. FIG. 4 is an external perspective view from below showing the lower surface of the substrate. FIG. 5 is a plan view of the header. FIG. 6 is a side view of the header. FIG. 7 is a cross-sectional view of the header taken along line XX of FIG. The semiconductor device is used for a high frequency circuit of an electronic device used at a high frequency such as a microwave and a millimeter wave. Specifically, it is used for an optical communication module that can input and output optical signals for optical communication.

  The semiconductor device 1 includes a TO-CAN type package header (header 2), a semiconductor element 3 mounted on the header 2, and a lid 4 in which the semiconductor element 3 is sealed. The semiconductor element 3 is mounted on the substrate 21. The lid 4 is provided on the substrate 21 so as to seal the semiconductor element 3. The semiconductor element 3 is a transistor, a diode, or an optical semiconductor element such as a light receiving element or a light emitting element.

The header 2 has an upper surface and a lower surface, a substrate 21 in which a through hole H is formed from the upper surface to the lower surface, and a bar shape through the through hole H, with one end positioned above the upper surface and the other end A plurality of lead terminals 22 positioned below the lower surface and a first insulating member that is filled in the through hole H and that fixes the plurality of lead terminals 22 to the substrate 21 so that the lead terminals 22 do not contact each other. 23 and a second insulating member 24 provided between the plurality of lead terminals 22 located on the substrate 21.

  The substrate 21 is also called a stem. The substrate 21 has a base 31 for the semiconductor element 3 in the center of the upper surface. The substrate 21 has a function of radiating heat generated by the mounted semiconductor element 3 to the outside of the semiconductor device 1. The board | substrate 21 is disk shape, Comprising: For example, the diameter is set to 5 mm or more and 10 mm or less. The thickness of the substrate 21 in the vertical direction is set to, for example, 0.2 mm or more and 2 mm or less.

  The board | substrate 21 consists of metals, such as iron or an iron-nickel-cobalt alloy, an iron-nickel alloy, an iron-manganese alloy, for example. When the substrate 21 is made of iron, the substrate 21 is manufactured in a predetermined shape by applying a conventionally known metal processing method such as rolling, cold rolling, or punching to the ingot. The thermal conductivity of the substrate 21 is set to, for example, 15 W / (m · K) or more and 450 W / (m · K) or less.

  On the surface of the substrate 21, a nickel layer having a thickness of 1 μm to 10 μm and a gold plating layer having a thickness of 0.1 μm to 1 μm are formed. By forming the nickel layer and the gold plating layer on the surface of the substrate 21, it is possible to prevent the substrate 21 from being oxidatively corroded. Moreover, by forming the nickel layer and the gold plating layer on the surface of the substrate 21, it is possible to easily braze the base 31 and each component to the substrate 21, and it is possible to improve the bonding strength.

  The base 31 also has a function of transmitting heat generated by the semiconductor element 3 to the substrate 21. Therefore, the lower surface of the base 31 is a flat surface. The base 31 is a rectangular block body. The base 31 is made of, for example, iron or a metal such as iron-nickel-cobalt alloy, iron-nickel alloy, iron-manganese alloy, aluminum oxide sintered body, mullite sintered body, silicon carbide sintered body, It is made of an insulating material such as an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic. When the base 31 is formed of the same material as the substrate 21, it may be formed integrally with the substrate 21, or both may be formed separately and joined together. The base 31 may be bonded on a Peltier element provided on the upper surface of the substrate 21. Thereby, the semiconductor element 3 is cooled to a desired temperature by the Peltier element via the base 31.

  In addition, the substrate 21 has a through hole H from the upper surface to the lower surface where it does not overlap the base 31. The penetration plan H is, for example, a shape in which a rectangle and a pair of semicircles are combined and the rectangle is sandwiched between a pair of semicircles in plan view. In the through hole H, for example, the radius of the semicircular portion of the through hole H is set to 0.2 mm to 0.5 mm, and the length of the rectangular side is set to 0.2 mm to 8 mm. Note that the length of the through hole H in the vertical direction corresponds to the thickness of the substrate 21. The through-hole H can be inserted with a plurality of lead terminals 22, the plurality of lead terminals 22 do not contact each other, and the plurality of lead terminals 22 do not contact the substrate 21. It may be set to a shape or the like.

  The lead terminal 22 is inserted through the through hole H formed in the substrate 21. The lead terminal 22 has a rod shape, and one end is located above the upper surface and the other end is located below the lower surface. The lead terminal 22 is for electrically connecting the semiconductor element 3 to an external electronic device. The lead terminal 22 is made of metal such as iron-nickel-cobalt alloy or iron-nickel alloy, for example. The lead terminal 22 has a columnar shape, and is set to have a diameter of 0.1 mm to 1 mm and a vertical length of 1.2 mm to 24 mm, for example.

  The lead terminal 22 is fixed in a state of being inserted into the through hole H via the first insulating member 23. The end portion of the lead terminal 22 positioned above the upper surface of the substrate 21 is electrically connected to the electrodes of the semiconductor element 3 and the electric wiring provided on the upper surface of the base 31 via bonding wires. Further, the lead terminal 22 is electrically connected to an external electric circuit such as a flexible printed circuit board at an end located below the lower surface of the substrate 21. An input / output signal is transmitted from the external electric circuit to the lead terminal 22. Note that the lead terminal 22 has an end portion located below the lower surface of the substrate 21 protruding from the lower end of the through hole H by 0.5 mm or more and 22 mm or less, and an end portion located above the upper surface of the substrate 21 is the through hole H. It protrudes from 0.5 mm to 5 mm from the upper end.

  The first insulating member 23 fixes the plurality of lead terminals 22 to the substrate 21 in a state where the plurality of lead terminals 22 are inserted into the through holes H. For example, when the first insulating member 23 is made of low-melting glass, the lead terminal 22 is inserted into the through hole H using a jig, and the ring-shaped solid first insulation made of low-melting glass is used. The lead terminal 22 can be fixed to the substrate 21 through the low-melting glass by fitting the precursor to be the member 23 into the through hole H and heating the precursor to melt and melt it. The first insulating member 23 is made of, for example, a material such as low-melting glass, insulating resin, or ceramics. For example, when the first insulating member 23 is made of insulating resin or ceramics, the first insulating member 23 has the same shape as the through hole H. The lead terminal 22 is fixed to the first insulating member 23 made of an insulating resin or ceramic whose outer shape is smaller than the through hole H, and the first insulating member 23 is bonded to the through hole H through solder, a resin bonding material, or low melting point glass. To do.

  In the region surrounded by the through hole H, the first insulating member 23 is interposed between the plurality of lead terminals 22. Further, the first insulating member 23 is interposed between the inner surface of the through hole H and the plurality of lead terminals 22. The first insulating member 23 is filled in the through hole H. The upper part of the first insulating member 23 is a flat surface and is aligned with the height position of the upper surface of the substrate 21. The lower part of the first insulating member 23 is a flat surface and is aligned with the height position of the lower surface of the substrate 21. The upper portion of the first insulating member 23 may be a concave surface that opens upward between the through hole H and the lead terminal 22, and the lower portion of the first insulating member 23 is formed with the through hole H and the lead terminal 22. It may be a concave surface that opens downward. Thereby, the first insulating member 23 can relieve the thermal stress caused by the difference in thermal expansion coefficient generated between the through hole H and the lead terminal 22.

  The second insulating member 24 is provided between the plurality of lead terminals 22 located on the substrate 21. The second insulating member 24 increases the dielectric constant between the plurality of lead terminals 22 to improve the frequency characteristics between the plurality of lead terminals 22. The second insulating member is made of, for example, a dielectric material such as low-melting glass having a lower melting point than the first insulating member 23, an insulating resin, or ceramics.

  The second insulating member 24 is provided from the first lead terminal 22a of the pair of lead terminals 22 to the second lead terminal 22b different from the first lead terminal 22a. An intermediate portion between the first lead terminal 22a and the second lead terminal 22b is recessed downward. For example, when the second insulating member 24 is made of low melting point glass having a melting point lower than that of the first insulating member 23, the second insulating member 24 has a hole into which the first lead terminal 22a and the second lead terminal 22b are inserted. After the first insulating member 23 is formed in the through hole H, the first lead terminal 22a and the second lead terminal 22b are newly inserted into the hole, and the second insulating member 24 is inserted into the first hole. 1 Place on the insulating member 23. Then, the second insulating member 24 can be formed by melting the second insulating member 24 and depositing the second insulating member 24 from the first lead terminal 22a to the second lead terminal 22b and solidifying. Thereby, the second insulating member 24 can fix the end portions of the pair of lead terminals 22a and 22b located above the upper surface of the substrate 21 and hold them at a desired position. Therefore, the second insulating member 24 can suppress deformation of the lead terminals 22a and 22b due to external forces such as wire bonding and an external member. Further, the second insulating member 24 is a heat generated between the first lead terminal 22a and the second lead terminal 22b because the intermediate portion between the first lead terminal 22a and the second lead terminal 22b is recessed downward. Thermal stress caused by the difference in expansion coefficient can be relaxed. Therefore, the first lead terminal 22a and the second lead terminal 22b can be arranged close to each other via the second insulating member 24, and the frequency characteristics of the high-frequency signal transmitted through the bonding wire and the pair of lead terminals 22 are good. Can be.

  In addition, by providing the second insulating member 24 between the first lead terminal 22 a and the second lead terminal 22 b, the pair of lead terminals 22 covered by the second insulating member 24 is between the pair of lead terminals 22. The capacitive coupling can be strengthened. As a result, impedance fluctuations in the pair of lead terminals 22 from the semiconductor element 3 can be suppressed, so that the frequency characteristics of the high-frequency signal transmitted to the pair of lead terminals 22 can be improved.

  Note that the second insulating member 24 may protrude upward at an intermediate portion between the first lead terminal 22a and the second lead terminal 22b. Thereby, the second insulating member 24 can further strengthen the capacitive coupling between the pair of lead terminals 22 and the bonding wires electrically connected to each of them. Moreover, the electrical wiring provided on the upper surface of the semiconductor element 3 or the base 31 and the pair of lead terminals 22 may be electrically connected by a plurality of bonding wires. Thereby, the capacitive coupling between the bonding wires is strengthened, and the frequency characteristics of the semiconductor device 1 can be further improved.

  The lid 4 is provided by sealing the semiconductor element 3 on the substrate 21. The lid 4 has a cap shape and has a space inside, and the semiconductor element 3 and the base 31 are provided in the space. The lid 4 is joined to the outer peripheral portion of the upper surface of the substrate 21 by resistance welding or the like. Here, the lid 4 is made of, for example, a metal such as copper, tungsten, iron, nickel or cobalt, or an alloy containing a plurality of these metals.

  In the semiconductor device 1 according to this embodiment, a pair of lead terminals 22a and 22b is fixed to one through hole H of the substrate 21 via a first insulating member 23, and between the pair of lead terminals 22a and 22b, By providing the second insulating member 24, the dielectric constant between the pair of lead terminals 22a and 22b is increased. For example, a differential signal is input to and output from the pair of lead terminals 22a and 22b, and the semiconductor element 3 is operated. The frequency characteristics of the pair of lead terminals 22a and 22b can be improved. As a result, the TO-CAN type package header 2 and the semiconductor device 1 capable of realizing the desired frequency characteristics can be provided.

  The present invention is not limited to the above-described embodiments, and various changes and improvements can be made without departing from the scope of the present invention. In the above-described embodiment, the pair of lead terminals 22a and 22b are inserted into the through hole H, but the present invention is not limited to this. As shown in FIG. 8, for example, four lead terminals 22 may be provided in one through hole H, and a pair of lead terminals is used as an input / output terminal, and a high-frequency signal is transmitted to the semiconductor element 3 with an external circuit board. I / O is possible. The number of lead terminals 22 is not limited to four, and a plurality of lead terminals 22 such as three or five may be provided in one through hole H, and a pair of lead terminals 22 from among the plurality of lead terminals 22. Can be input / output to / from the semiconductor element 3 with the external circuit board.

Moreover, in embodiment mentioned above, although it forms by solidifying the low melting glass which fuse | melted the solid 2nd insulating member 24, it is not restricted to this. As shown in FIG. 9, a rectangular parallelepiped dielectric 25 may be provided. The dielectric 25 is made of, for example, a dielectric material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic. Become. When the dielectric material is provided between the pair of lead terminals 22a and 22b, a metallized layer is provided on the side surface to which the lead terminals 22a and 22b are joined, and the lead terminals 22a and 22b and the metallized layer are connected via solder. And a rectangular parallelepiped dielectric 25 can be provided between the pair of lead terminals 22a and 22b. Thus, the dielectric 25 can arbitrarily change the dielectric constant between the pair of lead terminals 22a and 22b, and the ends of the pair of lead terminals 22a and 22b located above the upper surface of the substrate 21. Can be fixed and held in a desired position. Therefore, the dielectric 25 can suppress the lead terminals 22a and 22b from being deformed by an external force such as wire bonding or an external member.

  Furthermore, as shown in FIG. 10, a frame body 26 that exposes the upper end of the lead terminal 22 and has an outer edge corresponding to the outer edge of the through hole H in plan view may be used. The frame body 26 is made of, for example, a dielectric material such as glass, insulating resin, or ceramics, and is bonded to the upper surface of the first insulating member 23 and the lead terminals 22a and 22b via low-melting glass or resin bonding material. The Thereby, the frame body 26 can arbitrarily change the dielectric constant between the pair of lead terminals 22a and 22b, and the ends of the pair of lead terminals 22a and 22b located above the upper surface of the substrate 21. Can be fixed and held in a desired position. Therefore, the frame body 26 can suppress the lead terminals 22a and 22b from being deformed by an external force such as wire bonding or an external member.

  In addition, this invention is not limited to the above-mentioned form, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention. For example, the semiconductor device 1 may input and output differential signals to and from the semiconductor element 3 via the pair of lead terminals 22a and 22b. As a result, the semiconductor device 1 can accurately input and output a higher frequency electrical signal to the semiconductor element 3 while maintaining good frequency characteristics.

<Method for Manufacturing Semiconductor Device>
Here, a method of manufacturing the semiconductor device 1 shown in FIG. 1 will be described. First, each of the substrate 2, the lead terminal 22, and the lid 4 is prepared. Each of the board | substrate 2, the lead terminal 22, and the cover body 4 is manufactured in a predetermined shape by using a metal processing method with respect to the solidified ingot which cast the molten metal material in the mold.

  The prepared substrate 2 is fixed in a state where the through hole H is along the plane direction, and is fixed in a state where the pair of lead terminals 22 are inserted into the through hole H using a jig. And the precursor of the 1st insulating member 23 which consists of a solid 1st low melting glass is prepared. The solid first low-melting-point glass has a hole at a position where the pair of lead terminals are inserted, and is fitted into the through hole H of the substrate 2 while being inserted into the fixed pair of lead terminals 22. Further, the substrate 2 is sandwiched between the plates from both sides. The plate body has a hole through which the lead terminal passes, and in a state sandwiched between a pair of plate bodies, the first low melting glass is heated to melt the first low melting glass and melt in the through hole H. Then, the first low melting point glass is filled. Thereafter, the first low melting point glass is cooled, and the first insulating member 23 that fixes the pair of lead terminals 22 in the through hole H can be provided.

  Next, a precursor of a second insulating member 24 made of a second low-melting glass having a solid shape and a melting point lower than that of the first insulating member 23 is prepared. The substrate 2 is fixed in a state in which the through hole H is in the plane direction with respect to the plane, and the solid second low-melting glass has a hole at a position where the pair of lead terminals 22 are inserted and is fixed. The second low melting point glass is placed on the upper surface of the first insulating member 23 while inserting the pair of lead terminals 2 into the holes. Then, the second low melting point glass is melted, and the second low melting point glass is deposited between the first lead terminal 22a and the second lead terminal 22b. And the 2nd insulating member 24 can be provided by cooling 2nd low melting glass. In this way, a TO-CAN type package header (header 2) can be produced.

Next, a base 31 made of an aluminum oxide sintered body is provided on the upper surface of the substrate 21 of the header 2 via a brazing material. Then, the semiconductor element 3 is mounted on the base 31 via a brazing material, and the semiconductor element 3 and the electrical wiring formed on the upper surface of the base 31 are electrically connected. Furthermore, the electrical wiring formed on the upper surface of the base 31 and each of the pair of lead terminals 22 are electrically connected using wire bonding. Finally, the lid 4 is connected so as to seal the semiconductor element 3 on the substrate 21. In this way, the semiconductor device 1 can be manufactured.

1 Semiconductor Device 2 TO-CAN Type Package Header (Header)
21 Substrate 22 Lead terminal 23 First insulating member 24 Second insulating member 3 Semiconductor element 31 Base 4 Lid H Through hole

Claims (3)

A substrate having an upper surface and a lower surface, and a through-hole formed from the upper surface to the lower surface;
A plurality of lead terminals, which are rod-shaped through the through-hole, with one end positioned above the upper surface and the other end positioned below the lower surface;
A first insulating member that is filled in the through-hole and that fixes the plurality of lead terminals to the substrate so that the plurality of lead terminals do not contact each other;
A second insulating member provided between the plurality of lead terminals located on the substrate ,
The second insulating member is made of a glass material, and is provided from the first lead terminal to a second lead terminal different from the first lead terminal among the plurality of lead terminals,
A header for a TO-CAN type package , wherein an intermediate portion between the first lead terminal and the second lead terminal is recessed downward in plan view . A substrate having an upper surface and a lower surface, and a through-hole formed from the upper surface to the lower surface;
A plurality of lead terminals, which are rod-shaped through the through-hole, with one end positioned above the upper surface and the other end positioned below the lower surface;
A first insulating member that is filled in the through-hole and that fixes the plurality of lead terminals to the substrate so that the plurality of lead terminals do not contact each other;
A second insulating member provided between the plurality of lead terminals located on the substrate,
The TO-CAN type package header, wherein the second insulating member is a frame having an outer edge corresponding to the outer edge of the through hole in plan view. The TO-CAN type package header according to claim 1 or 2,
A semiconductor element mounted on the substrate;
A semiconductor device comprising: a lid provided on the substrate and encapsulating the semiconductor element.

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