JP6229366B2 - Composite oxide sintered body and oxide transparent conductive film - Google Patents
Composite oxide sintered body and oxide transparent conductive film Download PDFInfo
- Publication number
- JP6229366B2 JP6229366B2 JP2013164519A JP2013164519A JP6229366B2 JP 6229366 B2 JP6229366 B2 JP 6229366B2 JP 2013164519 A JP2013164519 A JP 2013164519A JP 2013164519 A JP2013164519 A JP 2013164519A JP 6229366 B2 JP6229366 B2 JP 6229366B2
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- oxide
- sintered body
- transparent conductive
- conductive film
- powder
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- 239000002131 composite material Substances 0.000 title claims description 55
- 229910052738 indium Inorganic materials 0.000 claims description 32
- 229910052735 hafnium Inorganic materials 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 29
- 229910052726 zirconium Inorganic materials 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 27
- 229910052715 tantalum Inorganic materials 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 21
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 18
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 238000005477 sputtering target Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000470 constituent Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 10
- -1 respectively Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 117
- 239000000843 powder Substances 0.000 description 82
- 239000000203 mixture Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 35
- 238000010304 firing Methods 0.000 description 28
- 229910003437 indium oxide Inorganic materials 0.000 description 24
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 24
- 238000002360 preparation method Methods 0.000 description 22
- 238000000465 moulding Methods 0.000 description 18
- 239000002585 base Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 14
- 230000031700 light absorption Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000002156 mixing Methods 0.000 description 13
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 13
- 229910001928 zirconium oxide Inorganic materials 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 12
- 239000011812 mixed powder Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 239000011324 bead Substances 0.000 description 9
- 230000002159 abnormal effect Effects 0.000 description 8
- 238000001354 calcination Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 239000011164 primary particle Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000006259 organic additive Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N nitrate group Chemical group [N+](=O)([O-])[O-] NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000009700 powder processing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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Description
本発明は、酸化インジウムを主成分とする複合酸化物焼結体及び酸化物透明導電膜に関するものである。 The present invention relates to a composite oxide sintered body mainly composed of indium oxide and an oxide transparent conductive film.
酸化物透明導電膜は、低抵抗と可視光域での高い透過率を有し、液晶等の表示素子や太陽電池等の各種受光素子の電極に利用され、中でも錫を添加した酸化インジウム膜はＩＴＯ（Ｉｎｄｉｕｍ Ｔｉｎ Ｏｘｉｄｅ）膜として広く利用されている。 The oxide transparent conductive film has low resistance and high transmittance in the visible light region, and is used for electrodes of various light receiving elements such as liquid crystal display elements and solar cells. Widely used as an ITO (Indium Tin Oxide) film.
近年は、素子特性を最大限に引き出すための一手法として電気特性や光学特性を要求特性に合わせて改善することが極めて重要となってきており、上述のＩＴＯ膜においては、錫の添加量を調整することによって、電気特性や光学特性を調整することが試みられてきたが、両方を同時に改善することが困難であった。例えば、非特許文献１にはＩｎ２Ｏ３−ＳｎＯ２系透明導電膜における電気光学特性のＳｎＯ２量依存性が開示されている。これによれば、Ｉｎ２Ｏ３−ＳｎＯ２系透明導電膜はＳｎＯ２量が１０ｗｔ％程度で最も抵抗が低くなる。しかし、このようなＳｎＯ２量ではプラズマ波長が短波長側にシフトするため、赤外域で光吸収率が大きく、透過率が低下する。 In recent years, it has become extremely important to improve electrical characteristics and optical characteristics according to required characteristics as a method for maximizing device characteristics. In the above ITO film, the amount of tin added is reduced. It has been attempted to adjust electrical characteristics and optical characteristics by adjusting, but it has been difficult to improve both simultaneously. For example, Non-Patent Document 1 discloses the SnO 2 amount dependency of electro-optical characteristics in an In 2 O 3 —SnO 2 -based transparent conductive film. According to this, the In 2 O 3 —SnO 2 based transparent conductive film has the lowest resistance when the SnO 2 content is about 10 wt%. However, with such an amount of SnO 2 , the plasma wavelength shifts to the short wavelength side, so that the light absorption rate is large in the infrared region and the transmittance is lowered.
このような状況下において、酸化インジウムへの元素添加により、スパッタリングターゲットやそれにより得られる膜を所望の特性に改善しようとする試みがある。 Under such circumstances, there is an attempt to improve the sputtering target and the film obtained thereby by adding an element to indium oxide to desired characteristics.
特許文献１には、インジウムと、複数の金属元素の中から少なくとも１種類の元素と、酸素と、から構成され、選択された金属元素が２．０〜４０ａｔ％である酸化物焼結体が開示されている。しかし、上記金属元素を単独で添加したものしか開示されていない。 Patent Document 1 discloses an oxide sintered body composed of indium, at least one element selected from a plurality of metal elements, and oxygen, and the selected metal element is 2.0 to 40 at%. It is disclosed. However, only what added the said metallic element independently is disclosed.
特許文献２には、インジウムと、複数の金属元素の中から少なくとも１種類の元素と、酸素と、から構成され、選択された金属元素が２．２〜４０ａｔ％である酸化物焼結体が開示されている。しかし、金属元素として、ジルコニウム、ハフニウム、タンタルが例示されているが、ジルコニウムのみを２．５ａｔ％添加した例、ハフニウムのみを２．５ａｔ％の添加した例、タンタルのみを２．５ａｔ％添加した例が記載されているにすぎない。 Patent Document 2 discloses an oxide sintered body composed of indium, at least one element selected from a plurality of metal elements, and oxygen, and the selected metal element is 2.2 to 40 at%. It is disclosed. However, zirconium, hafnium, and tantalum are exemplified as metal elements, but an example in which only 2.5 at% of zirconium is added, an example in which only 2.5 at% of hafnium is added, and 2.5 at% of only tantalum are added. An example is only given.
特許文献３及び特許文献４には酸化インジウムに絶縁性酸化物が含有されているスパッタリングターゲットが開示され、絶縁性酸化物として、酸化ジルコニウム、酸化ハフニウムが例示されている。しかしながら、いずれの文献も酸化ジルコニウムや酸化ハフニウムを添加した実施例については一切記載がない。 Patent Document 3 and Patent Document 4 disclose a sputtering target in which an insulating oxide is contained in indium oxide, and examples of the insulating oxide include zirconium oxide and hafnium oxide. However, none of the documents describes any examples in which zirconium oxide or hafnium oxide is added.
本発明は、広い波長域に渡ってより低い光吸収特性を示し、かつ低抵抗の酸化物透明導電膜を得ることができる複合酸化物焼結体、及び酸化物透明導電膜を提供することを目的とする。 It is an object of the present invention to provide a composite oxide sintered body and an oxide transparent conductive film that exhibit a lower light absorption characteristic over a wide wavelength range and can obtain a low-resistance oxide transparent conductive film. Objective.
また、本発明は、製膜や素子製造のプロセスの最高温度を低温に抑えた製造プロセスにおいても十分に低い抵抗率を有する酸化物透明導電膜と、基材により構成される積層基材を提供することを目的とする。 The present invention also provides a laminated base material composed of an oxide transparent conductive film having a sufficiently low resistivity and a base material even in a manufacturing process in which the maximum temperature of film forming and element manufacturing processes is kept low. The purpose is to do.
このような背景に鑑み、鋭意検討を重ねた結果、酸化インジウムに特定の元素を、特定の組成で添加することにより、低い光吸収特性と低抵抗を両立した酸化物透明導電膜を得ることが可能な複合酸化物焼結体が得られることを見出し、本発明を完成するに至った。 In view of such a background, as a result of intensive studies, it is possible to obtain an oxide transparent conductive film that has both low light absorption characteristics and low resistance by adding a specific element to indium oxide with a specific composition. The inventors have found that a possible complex oxide sintered body can be obtained, and have completed the present invention.
すなわち、本発明は一つの側面においては、構成元素としてインジウム、ジルコニウム、ハフニウム及び酸素を有する複合酸化物焼結体であって、当該焼結体を構成する元素の原子比が、インジウム、ジルコニウム及びハフニウムの含有量をそれぞれＩｎ、Ｚｒ、Ｈｆとしたときに、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０５〜４．５ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．１５ａｔ％
である複合酸化物焼結体を提供する。当該焼結体を構成する元素の原子比は
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜３．０ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることが好ましく、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜２．１ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることがより好ましい。
That is, in one aspect, the present invention is a composite oxide sintered body having indium, zirconium, hafnium and oxygen as constituent elements, and the atomic ratio of the elements constituting the sintered body is indium, zirconium and When the content of hafnium is In, Zr, and Hf, respectively,
Zr / (In + Zr + Hf) = 0.05 to 4.5 at%
Hf / (In + Zr + Hf) = 0.0002-0.15 at%
A composite oxide sintered body is provided. The atomic ratio of the elements constituting the sintered body is Zr / (In + Zr + Hf) = 0.7 to 3.0 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
It is preferable that
Zr / (In + Zr + Hf) = 0.7 to 2.1 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
It is more preferable that
なお、構成元素としてさらにタンタルを有する酸化物焼結体であって、当該焼結体を構成する元素の原子比が、タンタルの含有量をＴａとしたときに、
Ｔａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０００２〜１．５ａｔ％
であることが好ましく、
（Ｚｒ＋Ｈｆ＋Ｔａ）／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０６〜２．０ａｔ％
であることがより好ましい。
The oxide sintered body further having tantalum as a constituent element, and when the atomic ratio of the elements constituting the sintered body is Ta content of tantalum,
Ta / (In + Zr + Hf + Ta) = 0.0002 to 1.5 at%
It is preferable that
(Zr + Hf + Ta) / (In + Zr + Hf + Ta) = 0.06 to 2.0 at%
It is more preferable that
本発明の複合酸化物焼結体は、ビックスバイト型酸化物構造の結晶相のみから構成されていることが好ましい。 The complex oxide sintered body of the present invention is preferably composed only of a crystal phase having a bixbite type oxide structure.
本発明の複合酸化物焼結体は、相対密度が９７％以上であり、かつ平均粒子径が８μｍ以下であることが好ましい。 The composite oxide sintered body of the present invention preferably has a relative density of 97% or more and an average particle size of 8 μm or less.
本発明は別の側面において、上述の複合酸化物焼結体を含んでなるスパッタリングターゲットを提供する。 In another aspect, the present invention provides a sputtering target comprising the composite oxide sintered body described above.
本発明はさらに別の側面において、上述のスパッタリングターゲットを用いてスパッタリングする酸化物透明導電膜の製造方法を提供する。 In yet another aspect, the present invention provides a method for producing a transparent oxide conductive film that is sputtered using the above-described sputtering target.
本発明はさらに別の側面において、構成元素としてインジウム、ジルコニウム、ハフニウム及び酸素を有する酸化物透明導電膜であって、当該酸化物透明導電膜を構成する元素の原子比が、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０５〜４．５ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．１５ａｔ％
である酸化物透明導電膜を提供する。当該酸化物透明導電膜を構成する元素の原子比は
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜３．０ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることが好ましく、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜２．１ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることがより好ましい。
In yet another aspect of the present invention, the oxide transparent conductive film having indium, zirconium, hafnium and oxygen as constituent elements, wherein the atomic ratio of the elements constituting the oxide transparent conductive film is
Zr / (In + Zr + Hf) = 0.05 to 4.5 at%
Hf / (In + Zr + Hf) = 0.0002-0.15 at%
An oxide transparent conductive film is provided. The atomic ratio of the elements constituting the oxide transparent conductive film is Zr / (In + Zr + Hf) = 0.7 to 3.0 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
It is preferable that
Zr / (In + Zr + Hf) = 0.7 to 2.1 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
It is more preferable that
なお、構成元素としてさらにタンタルを有する酸化物透明導電膜であって、当該酸化物透明導電膜を構成する元素の原子比が、
Ｔａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０００２〜１．５ａｔ％
であることが好ましく、
（Ｚｒ＋Ｈｆ＋Ｔａ）／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０６〜２．０ａｔ％
であることがより好ましい。
The oxide transparent conductive film further having tantalum as a constituent element, and the atomic ratio of the elements constituting the oxide transparent conductive film is
Ta / (In + Zr + Hf + Ta) = 0.0002 to 1.5 at%
It is preferable that
(Zr + Hf + Ta) / (In + Zr + Hf + Ta) = 0.06 to 2.0 at%
It is more preferable that
本発明はさらに別の側面において、上述の酸化物透明導電膜と基材により構成される酸化物透明導電膜を含む積層基材、当該積層基材を用いることを特徴とする素子、当該素子を用いることを特徴とする電子機器を提供する。 In still another aspect, the present invention provides a laminated base material including an oxide transparent conductive film composed of the above-described oxide transparent conductive film and a base material, an element using the laminated base material, and the element. An electronic device characterized by being used is provided.
以下、本発明の好適な実施態様を詳細に説明する。 Hereinafter, preferred embodiments of the present invention will be described in detail.
本発明の複合酸化物焼結体は、構成元素としてインジウム、ジルコニウム、ハフニウム及び酸素を有する複合酸化物焼結体であって、当該焼結体を構成する元素の原子比が、インジウム、ジルコニウム及びハフニウムの含有量をそれぞれＩｎ、Ｚｒ、Ｈｆとしたときに、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０５〜４．５ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．１５ａｔ％
であることを特徴とする。このような組成範囲とすることにより、低温の製膜プロセスで低抵抗の膜厚５〜５０ｎｍ程度の非常に薄い酸化物透明導電膜を得ることが可能となる。ここでＩｎ、Ｚｒ、Ｈｆは、それぞれインジウム、ジルコニウム、ハフニウムの含有量（原子％）を示す。
The composite oxide sintered body of the present invention is a composite oxide sintered body having indium, zirconium, hafnium and oxygen as constituent elements, and the atomic ratio of the elements constituting the sintered body is indium, zirconium and When the content of hafnium is In, Zr, and Hf, respectively,
Zr / (In + Zr + Hf) = 0.05 to 4.5 at%
Hf / (In + Zr + Hf) = 0.0002-0.15 at%
It is characterized by being. By setting it as such a composition range, it becomes possible to obtain a very thin oxide transparent conductive film having a low resistance of about 5 to 50 nm with a low-temperature film forming process. Here, In, Zr, and Hf indicate the contents (atomic%) of indium, zirconium, and hafnium, respectively.
焼結体を構成する元素の原子比としては、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜３．０ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることが好ましく、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜２．１ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることがより好ましい。
As an atomic ratio of the elements constituting the sintered body,
Zr / (In + Zr + Hf) = 0.7 to 3.0 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
It is preferable that
Zr / (In + Zr + Hf) = 0.7 to 2.1 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
It is more preferable that
このような組成範囲とすることにより、上述の特性に加えて、スパッタリングによる製膜時の異常放電現象を抑制することが可能であり、可視光領域から赤外領域の広い波長領域において低い光吸収特性を有する酸化物透明導電膜を得ることが可能となる。 By setting such a composition range, in addition to the above-described characteristics, it is possible to suppress an abnormal discharge phenomenon during film formation by sputtering, and low light absorption in a wide wavelength region from the visible light region to the infrared region. It becomes possible to obtain an oxide transparent conductive film having characteristics.
酸化物透明導電膜の抵抗率の低下及び光吸収率の低減の観点から、Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）の下限は、好ましくは０．７ａｔ％である。同様の観点から、Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）の上限は、好ましくは３．０ａｔ％であり、より好ましくは２．１ａｔ％である。 From the viewpoint of lowering the resistivity of the oxide transparent conductive film and reducing the light absorption rate, the lower limit of Zr / (In + Zr + Hf) is preferably 0.7 at%. From the same viewpoint, the upper limit of Zr / (In + Zr + Hf) is preferably 3.0 at%, more preferably 2.1 at%.
同様の観点から、Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）の上限は、好ましくは０．０８ａｔ％である。 From the same viewpoint, the upper limit of Hf / (In + Zr + Hf) is preferably 0.08 at%.
本発明の複合酸化物焼結体は構成元素としてタンタルを含んでいてもよく、当該焼結体を構成する元素の原子比が、インジウム、ジルコニウム、ハフニウム及びタンタルの含有量をそれぞれＩｎ、Ｚｒ、Ｈｆ、Ｔａとしたときに、
Ｔａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０００２〜１．５ａｔ％
であることがより一層好ましく、さらに、
（Ｚｒ＋Ｈｆ＋Ｔａ）／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０６〜２．０ａｔ％
であることが特に好ましい。
The composite oxide sintered body of the present invention may contain tantalum as a constituent element, and the atomic ratio of the elements constituting the sintered body is the contents of indium, zirconium, hafnium and tantalum, respectively In, Zr, When Hf and Ta are used,
Ta / (In + Zr + Hf + Ta) = 0.0002 to 1.5 at%
It is even more preferable that,
(Zr + Hf + Ta) / (In + Zr + Hf + Ta) = 0.06 to 2.0 at%
It is particularly preferred that
このような組成範囲とすることにより、上述の特性に加えて、製膜や素子製造のプロセスの最高温度を低温に抑えた製造プロセスで十分に低い抵抗を実現した酸化物透明導電膜を形成することが可能となる。 By setting it as such a composition range, in addition to the above-mentioned characteristics, a transparent oxide conductive film that realizes sufficiently low resistance by a manufacturing process in which the maximum temperature of the film forming and element manufacturing process is suppressed to a low temperature is formed. It becomes possible.
酸化物透明導電膜の、製膜や素子製造のプロセスの最高温度を低温に抑えた製造プロセスでの十分に低い抵抗の実現という観点から、Ｔａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）の上限は、好ましくは１．０ａｔ％、より好ましくは０．７ａｔ％である。また、同様の観点から（Ｚｒ＋Ｈｆ＋Ｔａ）／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）の下限は、好ましくは０．７ａｔ％、より好ましくは０．８ａｔ％である。 The upper limit of Ta / (In + Zr + Hf + Ta) is preferably 1.0 at from the viewpoint of realizing a sufficiently low resistance in the manufacturing process of the oxide transparent conductive film in which the maximum temperature of the film forming and element manufacturing processes is suppressed to a low temperature. %, More preferably 0.7 at%. From the same viewpoint, the lower limit of (Zr + Hf + Ta) / (In + Zr + Hf + Ta) is preferably 0.7 at%, more preferably 0.8 at%.
本発明の複合酸化物焼結体は、インジウム、ジルコニウム、ハフニウム及び酸素、必要に応じてタンタルを有する複合酸化物焼結体を含む。複合酸化物焼結体におけるインジウムの含有量は、金属元素の合計に対して、好ましくは９５ａｔ％以上であり、好ましくは９６ａｔ％以上であり、さらに好ましくは９７〜９９．４ａｔ％である。複合酸化物焼結体は、酸化インジウムを主成分としても良い。 The composite oxide sintered body of the present invention includes a composite oxide sintered body having indium, zirconium, hafnium and oxygen, and optionally tantalum. The content of indium in the composite oxide sintered body is preferably 95 at% or more, preferably 96 at% or more, and more preferably 97 to 99.4 at% with respect to the total of metal elements. The complex oxide sintered body may contain indium oxide as a main component.
なお、本実施形態の複合酸化物焼結体は、不可避的な微量の不純物を含んでいてもよい。このような不純物としては、Ｉｎ、Ｚｒ、Ｈｆ、Ｔａ以外の金属元素を有する酸化物などの化合物が挙げられる。複合酸化物焼結体におけるこれらの不純物の合計含有量は、金属元素に換算して、Ｉｎ、Ｚｒ、Ｈｆ及びＴａの合計に対し、好ましくは１ａｔ％以下であり、より好ましくは０．５ａｔ％以下であり、さらに好ましくは０．１ａｔ％以下であり、特に好ましいのは０．０１ａｔ％以下である。 Note that the complex oxide sintered body of the present embodiment may contain inevitable trace amounts of impurities. Examples of such impurities include compounds such as oxides having metal elements other than In, Zr, Hf, and Ta. The total content of these impurities in the composite oxide sintered body is preferably 1 at% or less, more preferably 0.5 at%, based on the total of In, Zr, Hf, and Ta in terms of metal elements. Or less, more preferably 0.1 at% or less, and particularly preferably 0.01 at% or less.
本発明の複合酸化物焼結体は、ビックスバイト型酸化物構造の結晶相のみから構成されることが好ましい。 The complex oxide sintered body of the present invention is preferably composed only of a crystal phase having a bixbite type oxide structure.
このような特定の結晶相から構成される複合酸化物焼結体とすることにより、スパッタリングによる製膜時の異常放電現象を一層抑制することが可能となる。 By using a complex oxide sintered body composed of such a specific crystal phase, it becomes possible to further suppress an abnormal discharge phenomenon during film formation by sputtering.
ここで、「ビックスバイト型酸化物構造の結晶相のみから構成される」とは、実施例に示すＣｕを線源とするＸ線回折試験の２θ＝２０〜６０°の範囲内に該当する結晶相以外の回折ピークが検出されないことを意味する。 Here, “consisting only of a crystal phase of a bixbite type oxide structure” means a crystal that falls within the range of 2θ = 20 to 60 ° in the X-ray diffraction test using Cu as a radiation source shown in the examples. It means that diffraction peaks other than the phase are not detected.
ビックスバイト型酸化物構造の結晶相とは、Ｃｕを線源とするＸ線回折試験の２θ＝２０〜６０°の範囲内に検出される回折ピークが、ＪＣＰＤＳ（Ｊｏｉｎｔ Ｃｏｍｍｉｔｔｅｅ ｆｏｒ Ｐｏｗｄｅｒ Ｄｉｆｆｒａｃｔｉｏｎ Ｓｔａｎｄａｒｄｓ）の６−４１６の酸化インジウム（Ｉｎ２Ｏ３）のピークパターンまたはそれに類似したピークパターン（シフトしたピークパターン）に指数付けできることで確認できる。 The crystal phase of the bixbite type oxide structure means that a diffraction peak detected in the range of 2θ = 20 to 60 ° in an X-ray diffraction test using Cu as a radiation source is of JCPDS (Joint Committee for Powder Diffraction Standards). This can be confirmed by indexing to a peak pattern of 6-416 indium oxide (In 2 O 3 ) or a similar peak pattern (shifted peak pattern).
本発明の複合酸化物焼結体は、相対密度が９７％以上であり、かつ平均粒子径が８μｍ以下であることが好ましい。複合酸化物焼結体の相対密度や平均粒子径をこのような範囲とすることにより、スパッタリングによる製膜時の異常放電現象を抑制することが可能となり、また酸化物焼結体の強度が高くなり、スパッタリングによる製膜時や取り扱い時の割れ等の破損を抑制することが可能となる。 The composite oxide sintered body of the present invention preferably has a relative density of 97% or more and an average particle size of 8 μm or less. By setting the relative density and average particle diameter of the composite oxide sintered body in such a range, it is possible to suppress abnormal discharge phenomenon during film formation by sputtering, and the strength of the oxide sintered body is high. Thus, it is possible to suppress damage such as cracking during film formation or handling by sputtering.
ここで、本発明の複合酸化物焼結体の相対密度は、以下のように算出されるものである。すなわち、Ｉｎ、Ｚｒ、Ｈｆ及びＴａを、それぞれ、Ｉｎ２Ｏ３、ＺｒＯ２、ＨｆＯ２及びＴａ２Ｏ５の酸化物に換算して重量比率を求める。ここで、求めたＩｎ２Ｏ３、ＺｒＯ２、ＨｆＯ２及びＴａ２Ｏ５の重量比率を、それぞれａ（％）、ｂ（％）、ｃ（％）及びｄ（％）とする。次に、真密度をそれぞれ、Ｉｎ２Ｏ３：７．１８ｇ／ｃｍ３、ＺｒＯ２：６．００ｇ／ｃｍ３、ＨｆＯ２：９．６８ｇ／ｃｍ３、Ｔａ２Ｏ５：８．７ｇ／ｃｍ３を用いて、理論密度Ａ（ｇ／ｃｍ３）を算出する。
Ａ＝（ａ＋ｂ＋ｃ＋ｄ）／（（ａ／７．１８）＋（ｂ／６．００）＋（ｃ／９．６８）＋（ｄ／８．７））
複合酸化物焼結体の焼結密度Ｂ（ｇ／ｃｍ３）は、ＪＩＳ−Ｒ１６３４−１９９８に準拠してアルキメデス法で測定した。
Here, the relative density of the composite oxide sintered body of the present invention is calculated as follows. That is, In, Zr, Hf, and Ta are converted into oxides of In 2 O 3 , ZrO 2 , HfO 2, and Ta 2 O 5 , respectively, and the weight ratio is obtained. Here, the obtained weight ratios of In 2 O 3 , ZrO 2 , HfO 2 and Ta 2 O 5 are a (%), b (%), c (%) and d (%), respectively. Next, the true densities were respectively In 2 O 3 : 7.18 g / cm 3 , ZrO 2 : 6.00 g / cm 3 , HfO 2 : 9.68 g / cm 3 , Ta 2 O 5 : 8.7 g / cm 3 is used to calculate the theoretical density A (g / cm 3 ).
A = (a + b + c + d) / ((a / 7.18) + (b / 6.00) + (c / 9.68) + (d / 8.7)))
The sintered density B (g / cm 3 ) of the composite oxide sintered body was measured by Archimedes method in accordance with JIS-R1634-1998.
相対密度（％）は、算術的に求めた理論密度Ａ（ｇ／ｃｍ３）に対する焼結密度Ｂ（ｇ／ｃｍ３）の相対値として、下式により求めた。
相対密度（％）＝（Ｂ／Ａ）×１００
また、本発明における焼結体中の粒子の平均粒子径の測定は以下のように行う。すなわち、本発明の複合酸化物焼結体を適当な大きさに切断した後、観察面を表面研磨し、次に希塩酸溶液でケミカルエッチングを行い、粒界を明確化する。この試料をＥＰＭＡ、ＳＥＭ／ＥＤＳ、ＸＲＤ等を用いて、焼結体の研磨面の観察写真を撮る。観察写真の粒子５００個以上の長径を求め、その算術平均を平均粒子径とした。
The relative density (%) was obtained by the following equation as a relative value of the sintered density B (g / cm 3 ) with respect to the theoretical density A (g / cm 3 ) obtained mathematically.
Relative density (%) = (B / A) × 100
Moreover, the measurement of the average particle diameter of the particle | grains in the sintered compact in this invention is performed as follows. That is, after cutting the composite oxide sintered body of the present invention to an appropriate size, the observation surface is polished, and then chemical etching is performed with a diluted hydrochloric acid solution to clarify the grain boundaries. Using this sample, an observation photograph of the polished surface of the sintered body is taken using EPMA, SEM / EDS, XRD or the like. The major axis of 500 or more particles in the observation photograph was obtained, and the arithmetic average was taken as the average particle diameter.
次に、本発明の複合酸化物焼結体の製造方法について説明する。本発明の複合酸化物焼結体の製造方法は、インジウム源となる粉末、ジルコニウム源となる粉末、ハフニウム源となる粉末及び必要に応じてタンタル源となる粉末を含む成形用の混合粉末を調製する混合工程と、混合粉末を成形して成形体を作製する成形工程と、成形体を焼成して複合酸化物焼結体を得る焼成工程と、を有する。以下、各工程を詳細に説明する。 Next, a method for producing the composite oxide sintered body of the present invention will be described. The method for producing a composite oxide sintered body of the present invention comprises preparing a mixed powder for molding including a powder serving as an indium source, a powder serving as a zirconium source, a powder serving as a hafnium source, and a powder serving as a tantalum source as required. A mixing step, a forming step of forming the mixed powder to produce a formed body, and a firing step of firing the formed body to obtain a composite oxide sintered body. Hereinafter, each process will be described in detail.
混合工程では、上述した粉末を含む成形用の混合粉末を調製する。原料粉末の混合方法には特に限定はなく、上述した粉末を同時に混合してもよく、又は一部を予備混合した後に、さらに残部を追加して混合してもよい。 In the mixing step, a mixed powder for molding including the powder described above is prepared. The mixing method of the raw material powder is not particularly limited, and the above-described powders may be mixed at the same time, or a part of the powder may be premixed and then the remaining part may be added and mixed.
混合方法としては、まずジルコニウム源となる粉末、ハフニウム源となる粉末及び必要に応じてタンタル源となる粉末を予備混合し、仮焼することが好ましい。原料粉末は、特に限定されるものではなく、取り扱い性を考慮すると酸化ジルコニウム、酸化ハフニウム、酸化タンタルが適するが、焼成により酸化物となるジルコニウム、ハフニウムやタンタルの硝酸塩、塩化物、炭酸塩、アルコキシド等も使用することができる。これら粉末の粒径は、取扱性を考慮すると平均１次粒径１．５μｍ以下であることが好ましく、さらに好ましくは０．１〜１．５μｍである。このような粉末を使用することにより、焼結体密度の改善効果が得られる。 As a mixing method, it is preferable to first preliminarily mix a powder serving as a zirconium source, a powder serving as a hafnium source and, if necessary, a powder serving as a tantalum source, and calcining. The raw material powder is not particularly limited. Zirconium oxide, hafnium oxide, and tantalum oxide are suitable in consideration of handleability. Etc. can also be used. The particle size of these powders is preferably an average primary particle size of 1.5 μm or less, and more preferably 0.1 to 1.5 μm, in consideration of handleability. By using such a powder, the effect of improving the density of the sintered body can be obtained.
ここで、予備混合を行う場合、その方法は特に限定されるものではなく、ジルコニア、アルミナ、ナイロン樹脂等のボールやビーズを用いた乾式、湿式のメディア撹拌型ミルやメディアレスの容器回転式混合、機械撹拌式混合等の混合方法が例示される。具体的には、ボールミル、ビーズミル、アトライタ、振動ミル、遊星ミル、ジェットミル、Ｖ型混合機、パドル式混合機、二軸遊星撹拌式混合機等が挙げられる。なお、湿式法のボールミルやビーズミル、アトライタ、振動ミル、遊星ミル、ジェットミル等を用いる場合には、粉砕後のスラリーを乾燥する必要がある。この乾燥方法は特に限定されるものではないが、例えば、濾過乾燥、流動層乾燥、噴霧乾燥等が例示できる。また、金属塩溶液やアルコキシド溶液を原料として用いた場合には、溶液中から析出させた沈殿類を乾燥させておく。 Here, when premixing is performed, the method is not particularly limited, and dry and wet media agitating mills using media such as balls and beads such as zirconia, alumina, and nylon resin, and medialess container rotary mixing. Examples of the mixing method include mechanical stirring type mixing. Specific examples include a ball mill, a bead mill, an attritor, a vibration mill, a planetary mill, a jet mill, a V-type mixer, a paddle mixer, and a twin-shaft planetary agitation mixer. In the case of using a wet method ball mill, bead mill, attritor, vibration mill, planetary mill, jet mill, or the like, the pulverized slurry must be dried. This drying method is not particularly limited, and examples thereof include filtration drying, fluidized bed drying, and spray drying. In addition, when a metal salt solution or an alkoxide solution is used as a raw material, precipitates precipitated from the solution are dried.
予備混合を行う場合、得られた予備混合粉末を、８００〜１４００℃で仮焼することが好ましい。仮焼温度は１０００〜１４００℃がより好ましく、時間は１〜３時間で十分である。得られた仮焼粉末は、解砕処理等により、平均１次粒径を０．５μｍ以下にすることが好ましい。解砕等の処理方法は特に限定されるものではないが、上述した予備混合と同様の方法を用いることができる。 When performing premixing, it is preferable to calcine the obtained premixed powder at 800-1400 degreeC. The calcining temperature is more preferably 1000 to 1400 ° C., and 1 to 3 hours is sufficient. The obtained calcined powder preferably has an average primary particle size of 0.5 μm or less by crushing treatment or the like. A processing method such as crushing is not particularly limited, but the same method as the above-described premixing can be used.
次いで、最終組成となるように酸化インジウム粉末と解砕した仮焼粉末を混合し、成形用の混合粉末を得る。酸化インジウム粉末を用いることにより、工程の煩雑さや粉末処理等の付随作業を低減することが可能となる。インジウム源が酸化物以外の場合、例えば、硝酸塩、塩化物、炭酸塩等の場合には、仮焼して酸化物としてから使用する。これらの粉末の粒径は、取扱性を考慮すると平均１次粒径１．５μｍ以下であることが好ましく、さらに好ましくは０．１〜１．５μｍである。このような粉末を使用することにより、焼結体密度の改善効果が得られる。 Next, the indium oxide powder and the pulverized calcined powder are mixed so as to have a final composition to obtain a mixed powder for molding. By using indium oxide powder, it becomes possible to reduce the complexity of the process and incidental operations such as powder processing. When the indium source is other than oxide, for example, when it is nitrate, chloride, carbonate, etc., it is calcined and used as an oxide. The particle size of these powders is preferably an average primary particle size of 1.5 μm or less, and more preferably 0.1 to 1.5 μm, in consideration of handleability. By using such a powder, the effect of improving the density of the sintered body can be obtained.
ここで、酸化インジウム粉末と仮焼粉末の混合方法は特に限定されるものではないが、上述した予備混合と同様の方法を用いることができる。 Here, the mixing method of the indium oxide powder and the calcined powder is not particularly limited, but the same method as the above-described premixing can be used.
得られた成形用の混合粉末は平均１次粒径１．５μｍ以下、より好ましくは０．１〜１．５μｍとして成形用粉末とする。さらに造粒処理等により成形工程での操作性を改善しておくことも可能である。これらの操作は、成形性や焼結性の改善に効果を奏するものである。 The obtained mixed powder for molding has an average primary particle size of 1.5 μm or less, and more preferably 0.1 to 1.5 μm to form a molding powder. Furthermore, the operability in the molding process can be improved by granulation treatment or the like. These operations are effective in improving moldability and sinterability.
混合工程において、原料粉末の使用量は、成形用の混合粉末の組成（最終組成）を金属元素の原子比で表したとき、以下の範囲にあることが好ましい。すなわち、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０５〜４．５ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．１５ａｔ％
であり、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜３．０ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることが好ましく、
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜２．１ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることがより好ましい。
In the mixing step, the amount of the raw material powder used is preferably in the following range when the composition (final composition) of the mixed powder for molding is represented by the atomic ratio of the metal elements. That is,
Zr / (In + Zr + Hf) = 0.05 to 4.5 at%
Hf / (In + Zr + Hf) = 0.0002-0.15 at%
And
Zr / (In + Zr + Hf) = 0.7 to 3.0 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
It is preferable that
Zr / (In + Zr + Hf) = 0.7 to 2.1 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
It is more preferable that
このような組成範囲とすることにより、本発明の特徴を有する酸化物透明導電膜を得ることが可能となる。すなわち、低温の製膜プロセスで低抵抗の膜厚５〜５０ｎｍ程度の非常に薄い酸化物透明導電膜を得ることができ、スパッタリングによる製膜時の異常放電現象を抑制することが可能であり、可視光領域から赤外領域の広い波長領域において低い光吸収特性を有する酸化物透明導電膜を得ることが可能となる。 By setting it as such a composition range, it becomes possible to obtain the oxide transparent conductive film which has the characteristics of this invention. That is, it is possible to obtain a very thin oxide transparent conductive film having a low resistance film thickness of about 5 to 50 nm by a low temperature film forming process, and it is possible to suppress an abnormal discharge phenomenon during film formation by sputtering, An oxide transparent conductive film having low light absorption characteristics in a wide wavelength region from the visible light region to the infrared region can be obtained.
また、原料粉末の使用量が成形用の混合粉末の組成（最終組成）を金属元素の原子比で表したとき、以下の範囲にあることが好ましい。すなわち、
Ｔａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０００２〜１．５ａｔ％
であることが一層好ましい。さらに、
（Ｚｒ＋Ｈｆ＋Ｔａ）／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０６〜２．０ａｔ％
であることがより一層好ましい。
Moreover, it is preferable that the usage-amount of raw material powder exists in the following ranges, when the composition (final composition) of the mixed powder for shaping | molding is represented by the atomic ratio of a metal element. That is,
Ta / (In + Zr + Hf + Ta) = 0.0002 to 1.5 at%
It is more preferable that further,
(Zr + Hf + Ta) / (In + Zr + Hf + Ta) = 0.06 to 2.0 at%
Is more preferable.
このような組成範囲とすることにより、上述の特性に加えて、製膜や素子製造のプロセスの最高温度を低温に抑えた製造プロセスで十分に低い抵抗を実現した酸化物透明導電膜を形成することが可能となる。 By setting it as such a composition range, in addition to the above-mentioned characteristics, a transparent oxide conductive film that realizes sufficiently low resistance by a manufacturing process in which the maximum temperature of the film forming and element manufacturing process is suppressed to a low temperature is formed. It becomes possible.
成形工程では、混合工程において得られた成形用の混合粉末を成形する。成形方法は、目的とした形状に成形できる成形方法を適宜選択することが可能であり、特に限定されるものではない。例えば、プレス成形法、鋳込み成形法等が例示できる。成形圧力はクラック等の発生がなく、かつ取り扱いが可能な成形体を作製できる範囲で適宜設定することが可能であり、特に限定されるものではない。成形体の成形密度は可能な限り、高い方が好ましい。そのために冷間静水圧成形（ＣＩＰ）等の方法を用いることも可能である。この際、必要に応じ、成形性を改善するための有機系の添加剤を使用しても良い。 In the forming step, the mixed powder for forming obtained in the mixing step is formed. The molding method is not particularly limited, and a molding method that can be molded into a desired shape can be appropriately selected. For example, a press molding method, a casting molding method, etc. can be illustrated. The molding pressure is not particularly limited and can be appropriately set within a range in which a molded body that does not generate cracks and can be handled can be produced. The molding density of the molded body is preferably as high as possible. Therefore, it is also possible to use a method such as cold isostatic pressing (CIP). At this time, if necessary, an organic additive for improving moldability may be used.
成形の際に添加剤を使用する場合、成形体中に残存する水分や有機系の添加剤を除去するため、焼成工程の前に８０〜５００℃の温度で加熱処理を施すことが好ましい。この処理温度は、残存する水分や添加剤の量や種類により適宜選択すればよい。 When an additive is used during molding, it is preferable to perform a heat treatment at a temperature of 80 to 500 ° C. before the firing step in order to remove moisture and organic additives remaining in the molded body. The treatment temperature may be appropriately selected depending on the amount of moisture remaining and the additive.
焼成工程では、成形工程で得られた成形体を焼成する。昇温速度は特に限定されず、焼成時間の短縮と割れ防止の観点から、１０〜４００℃／時間とするのが好ましい。焼成温度は、１４００℃以上１６５０℃未満が好ましく、１５００℃以上１６４０℃以下とすることがより好ましい。こうすることにより、高密度の焼結体が得ることができる。保持時間は１時間以上が好ましく、２〜３０時間がより好ましい。こうすることにより、高密度でかつ平均粒子径が小さい焼結体を得ることができる。降温速度については、通常の範囲内で設定されれば特に限定されるものではなく、焼成時間の短縮と割れ防止の観点から、１０〜５００℃／時間とするのが好ましい。 In the firing step, the molded body obtained in the molding step is fired. The rate of temperature increase is not particularly limited, and is preferably 10 to 400 ° C./hour from the viewpoint of shortening the firing time and preventing cracking. The firing temperature is preferably 1400 ° C. or higher and lower than 1650 ° C., more preferably 1500 ° C. or higher and 1640 ° C. or lower. By doing so, a high-density sintered body can be obtained. The holding time is preferably 1 hour or longer, and more preferably 2 to 30 hours. By doing so, a sintered body having a high density and a small average particle diameter can be obtained. The temperature drop rate is not particularly limited as long as it is set within a normal range, and is preferably 10 to 500 ° C./hour from the viewpoint of shortening the firing time and preventing cracking.
焼成時の雰囲気は、酸素を含有する雰囲気であることが好ましく、特に酸素気流中が好ましく、さらに焼結時に炉内に酸素を導入する際の酸素流量（Ｌ／ｍｉｎ）と成形体の重量（仕込量、ｋｇ）の比（成形体の重量／酸素流量）を、１．０以下とすることが好ましい。こうすることにより、高密度の焼結体を得ることができる。 The atmosphere at the time of firing is preferably an atmosphere containing oxygen, particularly preferably in an oxygen stream, and the oxygen flow rate (L / min) and the weight of the molded body (L / min) when oxygen is introduced into the furnace during sintering. The ratio of charged amount, kg) (weight of molded body / oxygen flow rate) is preferably 1.0 or less. By doing so, a high-density sintered body can be obtained.
本発明の複合酸化物焼結体の製造方法は、上述の方法に限定されない。例えば、混合工程においては、予備混合及び仮焼を行わずに、原料粉末をまとめて混合して、成形用の混合粉末を調製してもよい。このようにして得られた複合酸化物焼結体の組成は、粉末の最終組成が反映される。 The method for producing the composite oxide sintered body of the present invention is not limited to the above-described method. For example, in the mixing step, the mixed powder for molding may be prepared by collectively mixing the raw material powders without performing preliminary mixing and calcination. The composition of the composite oxide sintered body thus obtained reflects the final composition of the powder.
本発明のスパッタリングターゲットは、上述の複合酸化物焼結体からなることを特徴とする。このようなスパッタリングターゲットは、スパッタリングによる製膜時の放電特性に優れ、異常放電が抑制され安定した製膜を可能とする。 The sputtering target of the present invention is characterized by comprising the above-described composite oxide sintered body. Such a sputtering target is excellent in discharge characteristics during film formation by sputtering, and abnormal film formation is suppressed and stable film formation is possible.
本発明においては、複合酸化物焼結体をそのままスパッタリングターゲットとして用いても良く、また複合酸化物焼結体を所定の形状に加工してスパッタリングターゲットとして用いても良い。 In the present invention, the composite oxide sintered body may be used as it is as a sputtering target, or the composite oxide sintered body may be processed into a predetermined shape and used as a sputtering target.
スパッタリングターゲットは、スパッタリング面の表面粗さが中心線平均粗さ（Ｒａ）で３μｍ以下であることが好ましく、２μｍ以下であることがより好ましく、１μｍ以下であることがさらに好ましい。これにより、スパッタリングによる製膜時の異常放電の回数を一層抑制することが可能となり、安定した製膜を可能とする。中心線平均粗さは、複合酸化物焼結体のスパッタリング面を番手を変えた砥石等で機械加工する方法、サンドブラスト等で噴射加工する方法等により調整することが可能である。また中心線平均粗さは、例えば測定面を表面性状測定装置で評価することにより求めることができる。 In the sputtering target, the surface roughness of the sputtering surface is preferably 3 μm or less, more preferably 2 μm or less, and even more preferably 1 μm or less in terms of centerline average roughness (Ra). Thereby, the number of abnormal discharges during film formation by sputtering can be further suppressed, and stable film formation is possible. The centerline average roughness can be adjusted by a method of machining the sputtering surface of the composite oxide sintered body with a grindstone or the like having a different count, a method of spraying with a sandblast, or the like. The center line average roughness can be determined by, for example, evaluating the measurement surface with a surface texture measuring device.
本発明のスパッタリングターゲットを用いて、スパッタリング法により製膜することができる。特にスパッタリング法としては、ＤＣスパッタリング法、ＲＦスパッタリング法、ＡＣスパッタリング法、ＤＣマグネトロンスパッタリング法、ＲＦマグネトロンスパッタリング法、イオンビームスパッタリング法等を適宜選択することができ、これらの中、大面積に均一に、かつ高速製膜可能な点でＤＣマグネトロンスパッタリング法、ＲＦマグネトロンスパッタリング法が好ましい。 It can form into a film by sputtering method using the sputtering target of this invention. In particular, as a sputtering method, a DC sputtering method, an RF sputtering method, an AC sputtering method, a DC magnetron sputtering method, an RF magnetron sputtering method, an ion beam sputtering method, or the like can be appropriately selected. In addition, the DC magnetron sputtering method and the RF magnetron sputtering method are preferable in that high-speed film formation is possible.
スパッタリング時の温度は特に限定されるものではないが、用いた基材の耐熱性に影響される。例えば、無アルカリガラスを基材とした場合は通常２５０℃以下、樹脂製のフィルムを基材とした場合は、通常１５０℃以下が好ましい。もちろん、石英、セラミックス、金属、耐熱性樹脂フィルム等の耐熱性に優れた基材を用いる場合には、それ以上の温度で製膜することも可能である。 Although the temperature at the time of sputtering is not specifically limited, it is influenced by the heat resistance of the used base material. For example, when alkali-free glass is used as a base material, it is usually preferably 250 ° C. or lower, and when a resin film is used as a base material, 150 ° C. or lower is usually preferable. Of course, when a substrate having excellent heat resistance such as quartz, ceramics, metal, and heat resistant resin film is used, the film can be formed at a temperature higher than that.
スパッタリング時の雰囲気ガスは、通常、不活性ガス、例えばアルゴンガスを用いる。必要に応じて、酸素ガス、窒素ガス、水素ガス等を用いてもよい。 As the atmospheric gas during sputtering, an inert gas, for example, an argon gas is usually used. If necessary, oxygen gas, nitrogen gas, hydrogen gas or the like may be used.
本発明のスパッタリングターゲットを用いたスパッタリングによって製膜された酸化物透明導電膜は、低温の製膜プロセスで低抵抗の膜厚５〜５０ｎｍ程度の非常に薄い酸化物透明導電膜を得ることが可能となるとともに、さらには膜厚が５０ｎｍよりも厚い場合にも低抵抗であり、かつ可視光領域から赤外領域の広い波長領域において低い光吸収特性を有する酸化物透明導電膜を得ることが可能となる。 The oxide transparent conductive film formed by sputtering using the sputtering target of the present invention can obtain a very thin oxide transparent conductive film having a low resistance of about 5 to 50 nm by a low temperature film forming process. Furthermore, it is possible to obtain an oxide transparent conductive film that has low resistance even when the film thickness is thicker than 50 nm and has low light absorption characteristics in a wide wavelength region from the visible light region to the infrared region. It becomes.
本実施形態の酸化物透明導電膜は、製膜や素子製造のプロセスの最高温度を２００℃未満、特に１８０℃未満という低温に抑えた製造プロセスでより一層十分に低い抵抗を実現することが可能である。 The oxide transparent conductive film according to the present embodiment can realize a sufficiently sufficiently low resistance by a manufacturing process in which the maximum temperature of film forming or element manufacturing process is suppressed to a low temperature of less than 200 ° C., particularly less than 180 ° C. It is.
また、このようにして得られた酸化物透明導電膜の組成は、スパッタリングに用いたターゲットの組成を反映される。すなわち、本発明のスパッタリングターゲットを用いることによって、Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）が０．０５〜４．５ａｔ％、Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．１５ａｔ％の組成を有し、タンタルを含む場合はＴａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０００２〜１．５ａｔ％である酸化物透明導電膜が得られる。 Moreover, the composition of the oxide transparent conductive film thus obtained reflects the composition of the target used for sputtering. That is, by using the sputtering target of the present invention, Zr / (In + Zr + Hf) has a composition of 0.05 to 4.5 at%, Hf / (In + Zr + Hf) = 0.0002 to 0.15 at%, and contains tantalum. In this case, an oxide transparent conductive film with Ta / (In + Zr + Hf + Ta) = 0.0002 to 1.5 at% is obtained.
したがって、酸化物透明導電膜は、構成元素として、インジウム、ジルコニウム、ハフニウム、必要に応じてタンタル、及び酸素を有する複合酸化物を含む。酸化物透明導電膜におけるインジウムの含有量、ジルコニウムの含有量、ハフニウムの含有量、及びタンタルの含有量の好ましい範囲は、本発明の酸化物焼結体と同様である。 Therefore, the oxide transparent conductive film includes a complex oxide containing indium, zirconium, hafnium, and optionally tantalum and oxygen as constituent elements. The preferable ranges of the indium content, the zirconium content, the hafnium content, and the tantalum content in the oxide transparent conductive film are the same as those of the oxide sintered body of the present invention.
酸化物透明導電膜の製膜時の異常放電回数の低減、抵抗率の低下及び光吸収率の低減の観点から、Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）の下限は、好ましくは０．７ａｔ％である。同様の観点から、Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）の上限は、好ましくは３．０ａｔ％であり、より好ましくは２．１ａｔ％である。 From the viewpoint of reducing the number of abnormal discharges during the formation of the oxide transparent conductive film, reducing the resistivity, and reducing the light absorption rate, the lower limit of Zr / (In + Zr + Hf) is preferably 0.7 at%. From the same viewpoint, the upper limit of Zr / (In + Zr + Hf) is preferably 3.0 at%, more preferably 2.1 at%.
同様の観点から、Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）の上限は、好ましくは０．０８ａｔ％である。 From the same viewpoint, the upper limit of Hf / (In + Zr + Hf) is preferably 0.08 at%.
酸化物透明導電膜の低い抵抗率と低い光吸収率を一層高い水準で両立させる観点から、酸化物透明導電膜は、Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）が０．７〜３．０ａｔ％であることが好ましく、０．７〜２．１ａｔ％であることがより好ましく、Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）が０．０００２〜０．０８ａｔ％であることが好ましい。 From the viewpoint of making the low resistivity and low light absorption rate of the oxide transparent conductive film compatible at a higher level, the oxide transparent conductive film preferably has Zr / (In + Zr + Hf) of 0.7 to 3.0 at%. 0.7 to 2.1 at% is more preferable, and Hf / (In + Zr + Hf) is preferably 0.0002 to 0.08 at%.
酸化物透明導電膜の、製膜や素子製造のプロセスの最高温度を低温に抑えた製造プロセスでの十分に低い抵抗の実現という観点から、Ｔａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０００２〜１．５ａｔ％であることが好ましく、０．０００２〜１．０ａｔ％であることがより好ましく、０．０００２〜０．７ａｔ％であることがより一層好ましい。 From the viewpoint of realizing sufficiently low resistance in the manufacturing process of the oxide transparent conductive film in which the maximum temperature of the film forming and element manufacturing processes is kept low, Ta / (In + Zr + Hf + Ta) = 0.0002 to 1.5 at% It is preferable that it is 0.0002-1.0at%, and it is still more preferable that it is 0.0002-0.7at%.
同様の観点から、（Ｚｒ＋Ｈｆ＋Ｔａ）／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０６〜２．０ａｔ％であることが好ましく、０．７〜２．０ａｔ％であることがより好ましく、０．８〜２．０ａｔ％であることがさらに好ましい。 From the same viewpoint, (Zr + Hf + Ta) / (In + Zr + Hf + Ta) = 0.06 to 2.0 at% is preferable, 0.7 to 2.0 at% is more preferable, and 0.8 to 2.0 at% is preferable. More preferably.
本実施形態の酸化物透明導電膜は、不可避的な微量の不純物を含んでいてもよい。このような不純物としては、Ｉｎ、Ｚｒ、Ｈｆ、Ｔａ以外の金属元素を有する酸化物などの化合物が挙げられる。これらの不純物の合計含有量は、金属元素に換算して、Ｉｎ、Ｚｒ、Ｈｆ及びＴａの合計に対し、好ましくは１ａｔ％以下であり、より好ましくは０．５ａｔ％以下であり、さらに好ましくは０．１ａｔ％以下であり、特に好ましいのは０．０１ａｔ％以下である。 The oxide transparent conductive film of this embodiment may contain inevitable trace amounts of impurities. Examples of such impurities include compounds such as oxides having metal elements other than In, Zr, Hf, and Ta. The total content of these impurities is preferably 1 at% or less, more preferably 0.5 at% or less, and even more preferably, based on the total of In, Zr, Hf and Ta in terms of metal elements. It is 0.1 at% or less, and 0.01 at% or less is particularly preferable.
上述した酸化物透明導電膜は、例えば太陽電池に用いることによって、従来よりも光学損失と、光吸収による発熱を抑制することが可能となる。なお、ここで言う太陽電池とは、単結晶シリコン、多結晶シリコン、アモルファスシリコンを用いたシリコン系太陽電池、ＣｕＩｎＳｅ２、Ｃｕ（Ｉｎ、Ｇａ）Ｓｅ２、ＧａＡｓ、ＣｄＴｅなどの化合物系太陽電池、さらに色素増感型太陽電池等の酸化物透明導電膜を用いる太陽電池を例示できる。 When the above-described transparent oxide conductive film is used in, for example, a solar cell, optical loss and heat generation due to light absorption can be suppressed as compared with the conventional case. The solar cell referred to here is a silicon solar cell using single crystal silicon, polycrystalline silicon, amorphous silicon, a compound solar cell such as CuInSe 2 , Cu (In, Ga) Se 2 , GaAs, CdTe, Furthermore, the solar cell using oxide transparent conductive films, such as a dye-sensitized solar cell, can be illustrated.
また、上述した酸化物透明導電膜は、主として用途により適切な膜厚として使用される。例えば、太陽電池等の各種受光素子の電極等に用いられる場合には、膜厚は１００ｎｍ〜３００ｎｍ程度で用いられる場合が多い。また、液晶等の表示素子、特にタッチパネル用途では、樹脂フィルムを用いたフレキシブル基板が採用される場合も多く、膜厚は５〜５０ｎｍ程度と非常に薄い膜として用いられており、樹脂フィルムを用いるため、製膜プロセスの最高温度を低温に抑えることが必須であるため、好適に用いることができる。 Moreover, the oxide transparent conductive film mentioned above is mainly used as a suitable film thickness by a use. For example, when used for electrodes of various light receiving elements such as solar cells, the film thickness is often about 100 nm to 300 nm. In addition, in display elements such as liquid crystal, especially for touch panel applications, a flexible substrate using a resin film is often employed, and the film thickness is used as a very thin film of about 5 to 50 nm. Therefore, since it is essential to keep the maximum temperature of the film forming process at a low temperature, it can be suitably used.
本発明の酸化物透明導電膜は、基材と構成される酸化物透明導電膜を含む積層基材として好適に用いることができる。 The oxide transparent conductive film of this invention can be used suitably as a laminated base material containing the oxide transparent conductive film comprised with a base material.
ここで、基材とは無アルカリガラスや石英等を含むガラス基材、樹脂製の高分子フィルム基材、セラミックスや金属の基材等が挙げられる。特に表示素子向けの場合は視認性が極めて重要であるため、無アルカリガラスや石英等を含むガラス基材、樹脂製の高分子フィルム基材が好適である。 Here, the base material includes a glass base material containing alkali-free glass or quartz, a resin-made polymer film base material, a ceramic or metal base material, and the like. In particular, in the case of a display element, visibility is very important, and therefore, a glass substrate containing non-alkali glass or quartz, or a resin polymer film substrate is preferable.
このような積層基材は複数の機能部品と構成された素子として好適に用いられる。例えば、太陽電池等の光学素子、ＦＰＤやタッチパネル等の表示素子に好適である。特に上述の表示素子は電子機器内に組み込まれて好適に用いられ、モバイル機器のように小型高性能電子機器には特に好適である。 Such a laminated substrate is suitably used as an element configured with a plurality of functional parts. For example, it is suitable for optical elements such as solar cells and display elements such as FPDs and touch panels. In particular, the display element described above is preferably used by being incorporated in an electronic device, and is particularly suitable for a small high-performance electronic device such as a mobile device.
本発明の複合酸化物焼結体は、スパッタリングターゲットとして用いることができ本発明の酸化物透明導電膜を製造することができる。本発明は、低温の製膜プロセスで低抵抗の非常に薄い酸化物透明導電膜を得ることが可能であり、かつ可視光領域から赤外領域の広い波長領域において低い光吸収特性を有する酸化物透明導電膜を得ることが可能となる。 The complex oxide sintered body of the present invention can be used as a sputtering target, and the oxide transparent conductive film of the present invention can be produced. The present invention makes it possible to obtain a very thin oxide transparent conductive film having a low resistance by a low-temperature film-forming process, and an oxide having low light absorption characteristics in a wide wavelength region from the visible light region to the infrared region. A transparent conductive film can be obtained.
本発明を以下の実施例により具体的に説明するが、本発明はこれに限定されるものではない。なお、使用した原料粉末及び評価方法は以下の通りである。 The present invention will be specifically described by the following examples, but the present invention is not limited thereto. In addition, the used raw material powder and the evaluation method are as follows.
［原料粉末］
酸化インジウム粉末 純度９９．９９％ 平均粒子径０．５μｍ
酸化ジルコニウム粉末 純度９９．９９％ 平均粒子径０．２μｍ
酸化ハフニウム粉末 純度９９．９９％ 平均粒子径０．２μｍ
酸化タンタル粉末 純度９９．９９％ 平均粒子径０．２μｍ
酸化錫粉末 純度９９．９９％ 平均粒子径０．５μｍ
［複合酸化物焼結体の評価］
（組成）
ＩＣＰ−ＭＳ（誘導結合プラズマ質量分析）装置により定量した。
（相対密度）
前述のように、理論密度に対する焼結密度の相対値として求めた。
（平均粒子径）
複合酸化物焼結体を構成する粒子の平均粒子径は、前述のようにして求めた。ただし、走査電子顕微鏡を用いて観察写真を得、平均粒子径は粒子５００個から求めた。
（Ｘ線回折試験）
複合酸化物焼結体の結晶相は、Ｘ線回折試験で同定した。測定条件は以下の通りである。
・Ｘ線源 ：ＣｕＫα
・パワー ：４０ｋＶ、４０ｍＡ
・走査速度 ：１°／分
得られた回折パターンを解析し、１）ビックスバイト型酸化物相、及び２）前記の１）以外の他の結晶相とに分類し、１）、２）の結晶相のそれぞれにおいて同定された場合は「有」、同定されなかった場合は「無」とした。
[Raw material powder]
Indium oxide powder Purity 99.99% Average particle size 0.5μm
Zirconium oxide powder Purity 99.99% Average particle size 0.2μm
Hafnium oxide powder Purity 99.99% Average particle size 0.2μm
Tantalum oxide powder Purity 99.99% Average particle size 0.2μm
Tin oxide powder Purity 99.99% Average particle size 0.5μm
[Evaluation of sintered complex oxide]
(composition)
Quantification was performed using an ICP-MS (Inductively Coupled Plasma Mass Spectrometer) apparatus.
(Relative density)
As described above, the relative value of the sintered density with respect to the theoretical density was obtained.
(Average particle size)
The average particle size of the particles constituting the composite oxide sintered body was determined as described above. However, an observation photograph was obtained using a scanning electron microscope, and the average particle diameter was determined from 500 particles.
(X-ray diffraction test)
The crystal phase of the composite oxide sintered body was identified by an X-ray diffraction test. The measurement conditions are as follows.
-X-ray source: CuKα
・ Power: 40kV, 40mA
Scanning speed: 1 ° / min The obtained diffraction pattern is analyzed and classified into 1) bixbite type oxide phase and 2) other crystal phases other than 1) above. When it was identified in each of the crystal phases, it was “Yes”, and when it was not identified, it was “None”.
［スパッタリングターゲットの評価］
（放電特性）
下記スパッタリング条件下で１時間当たりに生じた異常放電回数を算出した。
スパッタリング条件
・装置 ：ＤＣマグネトロンスパッタリング装置（アルバック社製）
・磁界強度 ：１０００Ｇａｕｓｓ（ターゲット直上、水平成分）
・基板温度 ：室温（約２５℃）
・到達真空度 ：５×１０−５Ｐａ
・スパッタリングガス ：アルゴン＋酸素
（酸素／（アルゴン＋酸素）＝０．０２（体積比））
・スパッタリングガス圧：０．５Ｐａ
・ＤＣパワー ：２００Ｗ
・スパッタリング時間 ：３０時間
［酸化物透明導電膜の評価］
（光学特性 ： 光透過率、光吸収率）
基板を含めた光透過率、光反射率を分光光度計Ｕ−４１００（日立製作所社製）で波長２４０ｎｍから２６００ｎｍの範囲を測定した。得られた光透過率をＴ（％）、光反射率をＲ（％）としたとき、光吸収率Ａ（％）を下式により求めた。
Ａ（％）＝１００−Ｔ―Ｒ
得られた光吸収率Ａ（％）について、波長４００〜６００ｎｍでの平均値と、８００〜１２００ｎｍでの平均値を算出した。
（抵抗率）
薄膜の抵抗率は、ＨＬ５５００（日本バイオ・ラッド ラボラトリーズ社製）を用いて測定した。
[Evaluation of sputtering target]
(Discharge characteristics)
The number of abnormal discharges that occurred per hour under the following sputtering conditions was calculated.
Sputtering conditions and equipment: DC magnetron sputtering equipment (manufactured by ULVAC)
Magnetic field strength: 1000 Gauss (directly above the target, horizontal component)
-Substrate temperature: Room temperature (about 25 ° C)
・ Achieved vacuum: 5 × 10 −5 Pa
・ Sputtering gas: Argon + oxygen
(Oxygen / (argon + oxygen) = 0.02 (volume ratio))
・ Sputtering gas pressure: 0.5 Pa
・ DC power: 200W
Sputtering time: 30 hours [Evaluation of oxide transparent conductive film]
(Optical characteristics: light transmittance, light absorption rate)
The light transmittance and light reflectance including the substrate were measured in a wavelength range of 240 nm to 2600 nm with a spectrophotometer U-4100 (manufactured by Hitachi, Ltd.). When the obtained light transmittance was T (%) and the light reflectance was R (%), the light absorptance A (%) was determined by the following equation.
A (%) = 100−TR
About the obtained light absorption rate A (%), the average value in wavelength 400-600 nm and the average value in 800-1200 nm were computed.
(Resistivity)
The resistivity of the thin film was measured using HL5500 (manufactured by Nippon Bio-Rad Laboratories).
［実施例１］
複合酸化物焼結体の作製
酸化ジルコニウム粉末及び酸化ハフニウム粉末を表１に記載の組成比となるように乾式ボールミルで混合し、１３００℃で２時間、大気中で仮焼した。得られた仮焼粉末は湿式ビーズミルで粉砕し、スプレードライヤで噴霧乾燥し、ＢＥＴ１２ｍ２／ｇ、平均粒子径８０μｍの造粒粉末を得た。
[Example 1]
Production of Composite Oxide Sintered Body Zirconium oxide powder and hafnium oxide powder were mixed by a dry ball mill so as to have the composition ratio shown in Table 1, and calcined in the atmosphere at 1300 ° C. for 2 hours. The obtained calcined powder was pulverized with a wet bead mill and spray-dried with a spray dryer to obtain a granulated powder having a BET of 12 m 2 / g and an average particle size of 80 μm.
次に、酸化インジウム粉末と得られた造粒粉末を表１に記載の最終組成となるように秤量して乾式ボールミルで混合した。得られた粉末を直径１５０ｍｍの金型を用いて、０．３ｔｏｎ／ｃｍ２で金型成形し、次いで３．０ｔｏｎ／ｃｍ２でＣＩＰ成形し、純酸素雰囲気焼結炉内に設置して、以下の条件で焼成した。
（焼成条件）
・昇温速度 ：５０℃／時間
・焼成温度 ：１４５０℃
・焼成時間 ：１０時間
・焼成雰囲気 ：昇温時の室温から降温時の１００℃まで純酸素ガスを炉内に導入
・降温速度 ：１００℃／時間
・仕込重量／酸素流量：０．９
得られた焼結体を粉砕し、Ｘ線回折試験により生成相を同定したところ、ビックスバイト型酸化物相に起因する回折ピークとトレース程度に酸化ジルコニウムに起因する回折ピークが観察された。
Next, the indium oxide powder and the obtained granulated powder were weighed so as to have the final composition shown in Table 1 and mixed by a dry ball mill. The obtained powder using a mold having a diameter of 150mm and was die-molded in 0.3ton / cm 2, then CIP molded at 3.0 ton / cm 2, and placed in pure oxygen atmosphere sintering furnace, Firing was performed under the following conditions.
(Baking conditions)
・ Raising rate: 50 ° C./hour ・ Baking temperature: 1450 ° C.
・ Baking time: 10 hours ・ Baking atmosphere: Pure oxygen gas is introduced into the furnace from room temperature at the time of temperature rise to 100 ° C. at the time of temperature drop ・ Temperature drop rate: 100 ° C./hour ・ Feed weight / oxygen flow rate: 0.9
When the obtained sintered body was pulverized and the generated phase was identified by an X-ray diffraction test, a diffraction peak attributed to the bixbite type oxide phase and a diffraction peak attributed to zirconium oxide were observed to the extent of the trace.
酸化物透明導電膜の作製
得られた複合酸化物焼結体を４インチφサイズに加工し、ターゲットのスパッタリング面となる面は、平面研削盤とダイヤモンド砥石を用い、砥石の番手を変えることにより、中心線平均粗さ（Ｒａ）を調整し、ターゲットを作製した。
Production of oxide transparent conductive film The obtained composite oxide sintered body was processed into a 4 inch φ size, and the surface to be the sputtering surface of the target was changed by changing the count of the grindstone using a surface grinder and a diamond grindstone. The center line average roughness (Ra) was adjusted to prepare a target.
得られたスパッタリングターゲットを用い、ＤＣマグネトロンスパッタリング法により下記の条件で製膜した後、後処理を行って酸化物透明導電膜を得た。
（スパッタリング製膜条件）
・装置 ：ＤＣマグネトロンスパッタ装置
・磁界強度 ：１０００Ｇａｕｓｓ（ターゲット直上、水平成分）
・基板温度 ：室温（２５℃）
・到達真空度 ：５×１０−４Ｐａ
・スパッタリングガス ：アルゴン＋酸素
（酸素／（アルゴン＋酸素）で表１に記載（体積比））
・スパッタリングガス圧：０．５Ｐａ
・ＤＣパワー ：２００Ｗ
・膜厚 ：２０ｎｍ
・使用基板 ：無アルカリガラス（コーニング社製ＥＡＧＬＥ ＸＧガラス）
厚さ０．７ｍｍ
（製膜後の後処理条件）
基板上に製膜した試料を１７０℃で６０分、大気中で熱処理を行った。
［実施例２］
複合酸化物焼結体の作製
酸化インジウム粉末、酸化ジルコニウム粉末及び酸化ハフニウム粉末を表１に記載の最終組成となるように秤量して乾式ボールミルで混合し、１３００℃で２時間、大気中で仮焼した。得られた仮焼粉末は湿式ビーズミルで粉砕し、スプレードライヤで噴霧乾燥し、ＢＥＴ１２ｍ２／ｇ、平均粒子径２０μｍの造粒粉末を得た。その後、実施例１と同様の条件で成形・焼成を行った。
Using the obtained sputtering target, a film was formed by the DC magnetron sputtering method under the following conditions, and then post-treatment was performed to obtain an oxide transparent conductive film.
(Sputtering film forming conditions)
-Equipment: DC magnetron sputtering equipment-Magnetic field strength: 1000 Gauss (directly above the target, horizontal component)
-Substrate temperature: Room temperature (25 ° C)
・ Achieved vacuum: 5 × 10 −4 Pa
・ Sputtering gas: Argon + oxygen
(Oxygen / (Argon + Oxygen) listed in Table 1 (volume ratio))
・ Sputtering gas pressure: 0.5 Pa
・ DC power: 200W
・ Film thickness: 20nm
-Substrate used: non-alkali glass (Corning EAGLE XG glass)
Thickness 0.7mm
(Post-treatment conditions after film formation)
The sample formed on the substrate was heat-treated at 170 ° C. for 60 minutes in the air.
[Example 2]
Preparation of Composite Oxide Sintered Indium oxide powder, zirconium oxide powder and hafnium oxide powder were weighed so as to have the final composition shown in Table 1, mixed with a dry ball mill, and temporarily in air at 1300 ° C. for 2 hours. Baked. The obtained calcined powder was pulverized by a wet bead mill and spray-dried by a spray dryer to obtain a granulated powder having a BET of 12 m 2 / g and an average particle size of 20 μm. Thereafter, molding and firing were performed under the same conditions as in Example 1.
得られた焼結体は実施例１と同様に評価した。 The obtained sintered body was evaluated in the same manner as in Example 1.
酸化物透明導電膜の作製
実施例１と同様の条件で行った。
Preparation of oxide transparent conductive film: Conducted under the same conditions as in Example 1.
［実施例３〜２５］
複合酸化物焼結体の作製
酸化ジルコニウム粉末及び酸化ハフニウム粉末を表１に記載の組成比となるように実施例１と同様に混合・仮焼を行った後、造粒を行いＢＥＴ１２ｍ２／ｇ、平均粒子径２０μｍの造粒粉末を得た。
[Examples 3 to 25]
Preparation of composite oxide sintered body Zirconium oxide powder and hafnium oxide powder were mixed and calcined in the same manner as in Example 1 so as to have the composition ratios shown in Table 1, followed by granulation and BET 12 m 2 / g. A granulated powder having an average particle diameter of 20 μm was obtained.
次に、酸化インジウム粉末と得られた造粒粉末を表１に記載の最終組成となるようにした以外は実施例１と同様の方法で成形体を作製し、得られた成形体を焼成温度、焼成時間を表１に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。 Next, a molded body was produced in the same manner as in Example 1 except that the indium oxide powder and the obtained granulated powder had the final composition shown in Table 1, and the obtained molded body was subjected to a firing temperature. The calcination was performed under the same conditions as in Example 1 except that the calcination time was set as shown in Table 1.
酸化物透明導電膜の作製
実施例１と同様の条件で行った。
［比較例１］
複合酸化物焼結体の作製
酸化インジウム粉末を乾式ボールミルで圧密し、得られた粉末を実施例１と同様の条件で成形を行った後、焼成温度、焼成時間を表１に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。
Preparation of oxide transparent conductive film: Conducted under the same conditions as in Example 1.
[Comparative Example 1]
Preparation of Composite Oxide Sintered Indium oxide powder was compacted with a dry ball mill, and the obtained powder was molded under the same conditions as in Example 1. Then, the firing temperature and firing time were determined according to the conditions described in Table 1. It fired on the same conditions as Example 1 except having performed, and evaluated.
酸化物透明導電膜の作製
実施例１と同様の条件で行った。
Preparation of oxide transparent conductive film: Conducted under the same conditions as in Example 1.
［比較例２］
複合酸化物焼結体の作製
酸化ジルコニウム粉末を湿式ビーズミルで粉砕し、スプレードライヤで噴霧乾燥し、ＢＥＴ１２ｍ２／ｇ、平均粒子径８０μｍの造粒粉末を得た。
[Comparative Example 2]
Production of Composite Oxide Sintered Body Zirconium oxide powder was pulverized with a wet bead mill and spray-dried with a spray dryer to obtain a granulated powder having a BET of 12 m 2 / g and an average particle size of 80 μm.
次に、酸化インジウム粉末と得られた造粒粉末を表１に記載の組成比となるようにした以外は実施例１と同様の方法で成形体を作製し、得られた成形体を焼成温度、焼成時間を表１に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。 Next, a molded body was produced in the same manner as in Example 1 except that the composition ratio of the indium oxide powder and the obtained granulated powder was set as shown in Table 1, and the obtained molded body was fired at the firing temperature. The calcination was performed under the same conditions as in Example 1 except that the calcination time was set as shown in Table 1.
酸化物透明導電膜の作製
実施例１と同様の条件で行った。
Preparation of oxide transparent conductive film: Conducted under the same conditions as in Example 1.
［比較例３〜７］
複合酸化物焼結体の作製
酸化ジルコニウム粉末を湿式ビーズミルで粉砕し、スプレードライヤで噴霧乾燥し、ＢＥＴ１２ｍ２／ｇ、平均粒子径２０μｍの造粒粉末を得た。
[Comparative Examples 3 to 7]
Preparation of Composite Oxide Sintered Body Zirconium oxide powder was pulverized with a wet bead mill and spray-dried with a spray dryer to obtain a granulated powder having a BET of 12 m 2 / g and an average particle size of 20 μm.
次に、酸化インジウム粉末と得られた造粒粉末を表１に記載の最終組成となるように秤量して乾式ボールミルで混合し、実施例１と同様の方法で成形体を作製し、得られた成形体を焼成温度、焼成時間を表１に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。 Next, the indium oxide powder and the obtained granulated powder are weighed so as to have the final composition shown in Table 1, mixed with a dry ball mill, and a molded body is produced in the same manner as in Example 1, and obtained. The molded body was fired and evaluated under the same conditions as in Example 1 except that the firing temperature and firing time were set as shown in Table 1.
酸化物透明導電膜の作製
実施例１と同様の条件で行った。
Preparation of oxide transparent conductive film: Conducted under the same conditions as in Example 1.
［比較例８〜１１］
複合酸化物焼結体の作製
原料粉末の組成を表１に記載の組成比となるようにした以外は実施例３と同様の方法で成形体を作製し、得られた成形体を焼成温度、焼成時間を表１に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。
[Comparative Examples 8 to 11]
Production of Composite Oxide Sintered Body A molded body was produced in the same manner as in Example 3 except that the composition of the raw material powder was set to the composition ratio shown in Table 1, and the obtained molded body was subjected to a firing temperature, Baking was performed under the same conditions as in Example 1 except that the baking time was set as described in Table 1, and evaluation was performed.
酸化物透明導電膜の作製
実施例１と同様の条件で行った。
［参考例１］
複合酸化物焼結体の作製
酸化インジウム粉末及び酸化錫粉末を９５：５の重量比となるように秤量して乾式ボールミルで混合した。
Preparation of oxide transparent conductive film: Conducted under the same conditions as in Example 1.
[Reference Example 1]
Preparation of Composite Oxide Sintered Indium oxide powder and tin oxide powder were weighed to a weight ratio of 95: 5 and mixed with a dry ball mill.
次に、実施例１と同様の方法で成形体を作製し、得られた成形体を焼成温度、焼成時間を表１に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。 Next, a molded body was produced in the same manner as in Example 1, and the obtained molded body was fired under the same conditions as in Example 1 except that the firing temperature and firing time were set as shown in Table 1. evaluated.
酸化物透明導電膜の作製
実施例１と同様の条件で行った。
Preparation of oxide transparent conductive film: Conducted under the same conditions as in Example 1.
実施例１〜２５、比較例１〜１１及び参考例１の評価結果を表１に示す。 The evaluation results of Examples 1 to 25, Comparative Examples 1 to 11 and Reference Example 1 are shown in Table 1.
複合酸化物焼結体の作製
酸化インジウム粉末、酸化ジルコニウム粉末及び酸化ハフニウム粉末を表２に記載の最終組成となるように秤量して乾式ボールミルで混合して平均粒子径０．２μｍの混合粉末を得た。得られた混合粉末を実施例１と同様の方法で成形体を作製し、得られた成形体を焼成温度、焼成時間を表２に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。
Preparation of Composite Oxide Sintered Body Indium oxide powder, zirconium oxide powder and hafnium oxide powder are weighed to the final composition shown in Table 2 and mixed by a dry ball mill to obtain a mixed powder having an average particle size of 0.2 μm. Obtained. A molded body was produced from the obtained mixed powder in the same manner as in Example 1, and the obtained molded body was subjected to the same conditions as in Example 1 except that the firing temperature and firing time were set as shown in Table 2. Baked and evaluated.
酸化物透明導電膜の作製
製膜雰囲気、膜厚を表２に記載の条件とした以外は実施例１と同様の条件で行った。製膜後に基板上に製膜した試料を１９０℃で５分、大気中で熱処理を行った。
［実施例４５〜６５］
複合酸化物焼結体の作製
原料粉末の組成を表２に記載の組成比となるようにした以外は実施例３と同様の方法で成形体を作製し、得られた成形体を焼成温度、焼成時間を表２に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。
Production of Transparent Oxide Conductive Film A film was formed under the same conditions as in Example 1 except that the film forming atmosphere and film thickness were set as shown in Table 2. The sample formed on the substrate after film formation was heat-treated in the air at 190 ° C. for 5 minutes.
[Examples 45 to 65]
Production of Composite Oxide Sintered Body A molded body was produced in the same manner as in Example 3 except that the composition of the raw material powder was set to the composition ratio shown in Table 2, and the obtained molded body was subjected to a firing temperature, Baking was performed under the same conditions as in Example 1 except that the baking time was set as described in Table 2, and evaluation was performed.
酸化物透明導電膜の作製
実施例２６と同様の条件で行い、評価した。
Preparation of Oxide Transparent Conductive Film Conducted and evaluated under the same conditions as in Example 26.
［比較例１２］
複合酸化物焼結体の作製
酸化インジウム粉末を乾式ボールミルで圧密し、比較例１と同様の条件で成形・焼成を行い、評価した。
酸化物透明導電膜の作製
実施例２６と同様の条件で行い、評価した。
[Comparative Example 12]
Preparation of Composite Oxide Sintered Indium oxide powder was compacted with a dry ball mill, molded and fired under the same conditions as in Comparative Example 1, and evaluated.
Preparation of Oxide Transparent Conductive Film Conducted and evaluated under the same conditions as in Example 26.
［比較例１３〜１６］
複合酸化物焼結体の作製
酸化インジウム粉末及び酸化ジルコニウム粉末を表２に記載の最終組成となるように秤量して、実施例２６と同様の条件で焼結体を作製し、評価した。
[Comparative Examples 13 to 16]
Production of Composite Oxide Sintered Body Indium oxide powder and zirconium oxide powder were weighed so as to have the final composition shown in Table 2, and a sintered body was produced and evaluated under the same conditions as in Example 26.
酸化物透明導電膜の作製
実施例２６と同様の条件で行い、評価した。
［比較例１７〜１９］
複合酸化物焼結体の作製
酸化インジウム粉末及び酸化ハフニウム粉末を表２に記載の最終組成となるように秤量して、実施例２６と同様の条件で焼結体を作製し、評価した。
Preparation of Oxide Transparent Conductive Film Conducted and evaluated under the same conditions as in Example 26.
[Comparative Examples 17 to 19]
Production of Composite Oxide Sintered Body Indium oxide powder and hafnium oxide powder were weighed so as to have the final composition shown in Table 2, and a sintered body was produced and evaluated under the same conditions as in Example 26.
酸化物透明導電膜の作製
実施例２６と同様の条件で行い、評価した。
Preparation of Oxide Transparent Conductive Film Conducted and evaluated under the same conditions as in Example 26.
［参考例２］
複合酸化物焼結体の作製
酸化インジウム粉末及び酸化錫粉末を９７：３の重量比となるように秤量して乾式ボールミルで混合した。
[Reference Example 2]
Preparation of Composite Oxide Sintered Indium oxide powder and tin oxide powder were weighed to a weight ratio of 97: 3 and mixed by a dry ball mill.
次に、実施例１と同様の方法で成形体を作製し、得られた成形体を焼成温度、焼成時間を表２に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。 Next, a molded body was produced in the same manner as in Example 1, and the obtained molded body was fired under the same conditions as in Example 1 except that the firing temperature and firing time were set as shown in Table 2. evaluated.
酸化物透明導電膜の作製
製膜雰囲気を表２に記載の条件とした以外は実施例２６と同様の条件で行い、評価した。
Production of Transparent Oxide Conductive Film The evaluation was carried out under the same conditions as in Example 26 except that the film forming atmosphere was changed to the conditions shown in Table 2.
実施例２６〜６５及び比較例１２〜１９及び参考例２の評価結果を表２に示す。 Table 2 shows the evaluation results of Examples 26 to 65, Comparative Examples 12 to 19, and Reference Example 2.
複合酸化物焼結体の作製
酸化インジウム粉末、酸化ジルコニウム粉末、酸化ハフニウム粉末及び酸化タンタル粉末を表３に記載の最終組成となるように秤量して乾式ボールミルで混合し、１３００℃で２時間、大気中で仮焼した。得られた仮焼粉末は湿式ビーズミルで粉砕し、スプレードライヤで噴霧乾燥し、ＢＥＴ１２ｍ２／ｇ、平均粒子径２０μｍの造粒粉末を得た。
Preparation of Composite Oxide Sintered Body Indium oxide powder, zirconium oxide powder, hafnium oxide powder and tantalum oxide powder are weighed so as to have the final composition shown in Table 3 and mixed in a dry ball mill for 2 hours at 1300 ° C. It was calcined in the atmosphere. The obtained calcined powder was pulverized by a wet bead mill and spray-dried by a spray dryer to obtain a granulated powder having a BET of 12 m 2 / g and an average particle size of 20 μm.
得られた造粒粉末を実施例１と同様の方法で成形し、得られた成形体を焼成温度、焼成時間を表３に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。 The obtained granulated powder was molded in the same manner as in Example 1, and the obtained molded body was fired under the same conditions as in Example 1 except that the firing temperature and firing time were set as shown in Table 3. ,evaluated.
酸化物透明導電膜の作製
実施例１と同様の条件で行い、評価した。
［比較例２０〜２１］
複合酸化物焼結体の作製
酸化インジウム粉末及び酸化タンタル粉末を表３に記載の最終組成となるように秤量して乾式ボールミルで混合し、１３００℃で２時間、大気中で仮焼した。得られた仮焼粉末は湿式ビーズミルで粉砕し、スプレードライヤで噴霧乾燥し、ＢＥＴ１２ｍ２／ｇ、平均粒子径２０μｍの造粒粉末を得た。
Preparation of oxide transparent conductive film The evaluation was performed under the same conditions as in Example 1.
[Comparative Examples 20-21]
Production of Composite Oxide Sintered Indium oxide powder and tantalum oxide powder were weighed so as to have the final composition shown in Table 3, mixed with a dry ball mill, and calcined at 1300 ° C. for 2 hours in the air. The obtained calcined powder was pulverized by a wet bead mill and spray-dried by a spray dryer to obtain a granulated powder having a BET of 12 m 2 / g and an average particle size of 20 μm.
得られた造粒粉末を実施例１と同様の方法で成形し、得られた成形体を焼成温度、焼成時間を表３に記載の条件とした以外は実施例１と同様の条件で焼成し、評価した。 The obtained granulated powder was molded in the same manner as in Example 1, and the obtained molded body was fired under the same conditions as in Example 1 except that the firing temperature and firing time were set as shown in Table 3. ,evaluated.
酸化物透明導電膜の作製
実施例１と同様の条件で行い、評価した。
Preparation of oxide transparent conductive film The evaluation was performed under the same conditions as in Example 1.
実施例６６〜７３及び比較例２０〜２１の評価結果を表３に示す。 The evaluation results of Examples 66 to 73 and Comparative Examples 20 to 21 are shown in Table 3.
また、実施例２６〜４４と比較例１２〜１９を比較すると、低抵抗であり、かつ可視光領域から赤外領域の広い波長領域において低い光吸収特性を有する酸化物透明導電膜を得ることが可能となることが分かる。 In addition, when Examples 26 to 44 and Comparative Examples 12 to 19 are compared, it is possible to obtain an oxide transparent conductive film that has low resistance and low light absorption characteristics in a wide wavelength region from the visible light region to the infrared region. It turns out that it is possible.
実施例６６〜７３から、組成範囲を制御することにより、低温の製膜プロセスでより一層の低抵抗の非常に薄い酸化物透明導電膜を得ることが可能となることが分かる。 From Examples 66 to 73, it can be seen that by controlling the composition range, it is possible to obtain a very thin oxide transparent conductive film having a further low resistance by a low-temperature film forming process.
Claims (17)
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０５〜４．５ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．１５ａｔ％
であり、インジウムの含有量が、金属元素の合計に対して９５ａｔ％以上であることを特徴とする複合酸化物焼結体。 A composite oxide sintered body having indium, zirconium, hafnium and oxygen as constituent elements, the atomic ratio of the elements constituting the sintered body being the contents of indium, zirconium and hafnium, respectively, In, Zr, Hf And when
Zr / (In + Zr + Hf) = 0.05 to 4.5 at%
Hf / (In + Zr + Hf) = 0.0002-0.15 at%
A composite oxide sintered body characterized in that the content of indium is 95 at% or more with respect to the total of metal elements .
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることを特徴とする請求項１に記載の複合酸化物焼結体。 Zr / (In + Zr + Hf) = 0.7 to 3.0 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
The composite oxide sintered body according to claim 1, wherein:
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることを特徴とする請求項１に記載の複合酸化物焼結体。 Zr / (In + Zr + Hf) = 0.7 to 2.1 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
The composite oxide sintered body according to claim 1, wherein:
Ｔａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０００２〜１．５ａｔ％
であることを特徴とする請求項１乃至３いずれか一項に記載の複合酸化物焼結体。 The oxide sintered body further having tantalum as a constituent element, and when the atomic ratio of tantalum constituting the sintered body is Ta content of tantalum,
Ta / (In + Zr + Hf + Ta) = 0.0002 to 1.5 at%
Composite oxide sintered body according to any one of claims 1 to 3, characterized in that.
（Ｚｒ＋Ｈｆ＋Ｔａ）／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０６〜２．０ａｔ％
であることを特徴とする請求項１乃至４いずれか一項に記載の複合酸化物焼結体。 The oxide sintered body further having tantalum as a constituent element, and when the atomic ratio of tantalum constituting the sintered body is Ta content of tantalum,
(Zr + Hf + Ta) / (In + Zr + Hf + Ta) = 0.06 to 2.0 at%
Composite oxide sintered body according to any one of claims 1 to 4, characterized in that.
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０５〜４．５ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．１５ａｔ％
であり、インジウムの含有量が、金属元素の合計に対して９５ａｔ％以上であることを特徴とする酸化物透明導電膜。 An oxide transparent conductive film having indium, zirconium, hafnium and oxygen as constituent elements, and the atomic ratio of the elements constituting the oxide transparent conductive film is
Zr / (In + Zr + Hf) = 0.05 to 4.5 at%
Hf / (In + Zr + Hf) = 0.0002-0.15 at%
A transparent oxide conductive film characterized in that the content of indium is 95 at% or more with respect to the total of metal elements .
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜３．０ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることを特徴とする請求項１０に記載の酸化物透明導電膜。 The atomic ratio of the elements constituting the oxide transparent conductive film is
Zr / (In + Zr + Hf) = 0.7 to 3.0 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
Oxide transparent conductive film according to claim 1 0, characterized in that it.
Ｚｒ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．７〜２．１ａｔ％
Ｈｆ／（Ｉｎ＋Ｚｒ＋Ｈｆ）＝０．０００２〜０．０８ａｔ％
であることを特徴とする請求項１０に記載の酸化物透明導電膜。 The atomic ratio of the elements constituting the oxide transparent conductive film is
Zr / (In + Zr + Hf) = 0.7 to 2.1 at%
Hf / (In + Zr + Hf) = 0.0002-0.08 at%
Oxide transparent conductive film according to claim 1 0, characterized in that it.
Ｔａ／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０００２〜１．５ａｔ％
であることを特徴とする請求項１０乃至１２いずれか一項に記載の酸化物透明導電膜。 It is an oxide transparent conductive film further having tantalum as a constituent element, and the atomic ratio of the elements constituting the oxide transparent conductive film is
Ta / (In + Zr + Hf + Ta) = 0.0002 to 1.5 at%
Claim 1 0 or 12 transparent conductive oxide film according to any one, characterized in that it.
（Ｚｒ＋Ｈｆ＋Ｔａ）／（Ｉｎ＋Ｚｒ＋Ｈｆ＋Ｔａ）＝０．０６〜２．０ａｔ％
であることを特徴とする請求項１０乃至１３いずれか一項に記載の酸化物透明導電膜。 It is an oxide transparent conductive film further having tantalum as a constituent element, and the atomic ratio of the elements constituting the oxide transparent conductive film is
(Zr + Hf + Ta) / (In + Zr + Hf + Ta) = 0.06 to 2.0 at%
Oxide transparent conductive film according to any one of claims 10 to 13, characterized in that.
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