JP6199047B2 - Manufacturing method of glass substrate for magnetic disk - Google Patents

Manufacturing method of glass substrate for magnetic disk Download PDF

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JP6199047B2
JP6199047B2 JP2013039132A JP2013039132A JP6199047B2 JP 6199047 B2 JP6199047 B2 JP 6199047B2 JP 2013039132 A JP2013039132 A JP 2013039132A JP 2013039132 A JP2013039132 A JP 2013039132A JP 6199047 B2 JP6199047 B2 JP 6199047B2
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polishing
glass substrate
brush
side wall
wall surface
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JP2014167839A (en
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サムアーググーン キェットティタム
サムアーググーン キェットティタム
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Hoya Corp
Hoya Glass Disk Thailand Ltd
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本発明は、中心に円孔を有する円盤状のガラス基板の端面に、研磨ブラシを押し当てて研磨する端面研磨処理を含む磁気ディスク用ガラス基板の製造方法に関する。   The present invention relates to a method for manufacturing a glass substrate for a magnetic disk including an end surface polishing process in which a polishing brush is pressed against an end surface of a disk-shaped glass substrate having a circular hole in the center.

情報記録媒体の1つとして用いられる磁気ディスクには、従来より、ガラス基板が好適に用いられている。今日、ハードディスクドライブ装置における記憶容量の増大の要請を受けて、磁気記録の高密度化が図られている。これに伴って、磁気ヘッドの磁気記録面からの浮上距離を極めて短くして磁気記録情報エリアを微細化することが行われている。このような磁気ディスクでは、サーマルアスペリティが発生して不具合を生じさせる場合があった。   Conventionally, a glass substrate has been suitably used for a magnetic disk used as one of information recording media. Today, in response to a request for an increase in storage capacity in a hard disk drive device, the density of magnetic recording has been increased. Along with this, the magnetic recording information area is miniaturized by extremely shortening the flying distance from the magnetic recording surface of the magnetic head. In such a magnetic disk, thermal asperity may occur and cause problems.

この磁気ディスクの不具合は、磁気ディスク用ガラス基板の主表面に微細な異物粒子が付着し、その上の磁性層に表面粗さを形成することに起因する。この異物粒子は、ガラス基板の端面に形成された細かな線状のキズに付着した粒子が、磁気ディスクの製造中に、ガラス基板の端面から離脱して主表面に付着したものである場合が多い。このため、ガラス基板の端面は、キズが形成されないように鏡面状態に研磨される。   This defect of the magnetic disk is caused by fine foreign particles adhering to the main surface of the magnetic disk glass substrate and forming a surface roughness on the magnetic layer thereon. The foreign particles may be particles that adhere to fine linear scratches formed on the end surface of the glass substrate and are detached from the end surface of the glass substrate and adhere to the main surface during the manufacture of the magnetic disk. Many. For this reason, the end surface of the glass substrate is polished in a mirror state so that no flaw is formed.

磁気ディスディスク用ガラス基板の端面は、一般に、円盤形状のガラス基板に設けられた円孔の内周側及びガラス基板の円盤形状の外周側の双方において、ガラス基板の主表面に対して直交する側壁面と、主表面と側壁面との間に介在する介在面と、を有する。介在面は、例えば主表面に対して傾斜角度を持って面取りされてできた傾斜面である。
このような磁気ディスク用ガラス基板の端面である介在面及び側壁面は、例えば研磨砥粒として例えば酸化セリウム砥粒を含むスラリー(遊離砥粒)を用いたブラシ研磨により、研磨されることは周知である。このような研磨例は、例えば下記特許文献1の段落0034や下記特許文献2の請求項1に記載されている。
The end surface of the glass substrate for magnetic disk is generally orthogonal to the main surface of the glass substrate on both the inner periphery side of the circular hole provided in the disk-shaped glass substrate and the outer periphery side of the disk shape of the glass substrate. A sidewall surface, and an intervening surface interposed between the main surface and the sidewall surface. The interposed surface is, for example, an inclined surface that is chamfered with an inclination angle with respect to the main surface.
It is well known that the interposition surfaces and the side wall surfaces, which are the end surfaces of such a magnetic disk glass substrate, are polished by brush polishing using, for example, slurry (free abrasive grains) containing, for example, cerium oxide abrasive grains as abrasive grains. It is. Examples of such polishing are described in paragraph 0034 of Patent Document 1 below and Claim 1 of Patent Document 2 below.

特開2012−203922号公報JP2012-203922A 特開2012−142051号公報JP 2012-142051 A

特許文献1に記載されるような従来の端面研磨では、側壁面及び介在面を同時に研磨するとき、側壁面の方が介在面に比べて先に鏡面状態になり研磨が完了する。しかし、介在面も鏡面状態に研磨されるように、より長時間の研磨が行われる。また、介在面の研磨では、研磨ブラシの中心軸から遠い位置にある介在面で研磨残しが無いように、さらに、介在面の研磨品質が良好になるように、研磨ブラシの毛先が最も効率よく介在面に当接するように研磨ブラシの位置は設定される。
このように介在面を研磨するとき、側壁面への研磨ブラシの当たりが強くなりすぎて、側壁面が研磨ブラシのブラシ毛の腹部(毛先と毛の基部との中間部分)で研磨されることになる。このため側壁面はブラシ毛の腹部で擦られて線状のキズが発生する場合がある。このキズには、上述したように異物粒子が付着し、この異物粒子が磁気ディスクの製造の後工程において端面から離脱して主表面に付着して問題となる場合がある。また、側壁面にキズを発生させないように研磨した場合には、介在面の研磨が不十分となる場合もある。
In the conventional end surface polishing as described in Patent Document 1, when the side wall surface and the intervening surface are simultaneously polished, the side wall surface becomes a mirror surface state earlier than the intervening surface and the polishing is completed. However, polishing for a longer time is performed so that the intervening surface is also polished to a mirror state. In addition, in polishing the intervening surface, the tip of the polishing brush is the most efficient so that there is no residue left on the intervening surface far from the central axis of the polishing brush and the polishing quality of the intervening surface is good. The position of the polishing brush is set so that it often abuts the intervening surface.
When polishing the interposition surface in this way, the contact of the polishing brush with the side wall surface becomes too strong, and the side wall surface is polished by the abdomen of the brush hair of the polishing brush (intermediate portion between the tip of the hair and the base of the hair). It will be. For this reason, the side wall surface may be rubbed by the abdomen of the brush hair to generate a linear scratch. As described above, foreign particles may adhere to the scratches, and the foreign particles may be detached from the end face and adhere to the main surface in a later process of manufacturing the magnetic disk. Further, when polishing is performed so as not to cause scratches on the side wall surface, the interposed surface may be insufficiently polished.

一方、特許文献2に記載される磁気記録媒体用ガラス基板の製造方法では、研磨に用いる研磨ブラシは、回転自在の軸心と、軸心の周囲に配置されたブラシ部とを有する。ブラシ部は、剛性が相対的に高く、軸心からブラシ部の先端までの長さが相対的に短い第1のブラシ部と、剛性が相対的に低く、軸心からブラシ部の先端までの長さが相対的に長い第2のブラシ部とを少なくとも備える。端面研磨では、第1の研磨段階として、第1のブラシ部と第2のブラシ部とをガラス基板の端面である介在面と側壁面に接触させてブラシを軸心周りに回転させる。さらに、第2の研磨段階として、ガラス基板の端面とブラシの軸心との間の距離が第1の研磨段階よりも長くなった状態で、第2のブラシ部のみをガラス基板の端面に接触させてブラシを軸心周りに回転させる。しかし、第1の研磨段階では、介在面及び側壁面を同時に研磨する。このため、毛の長い第2のブラシ部は先に摩耗するので、長期間安定して研磨ブラシを使用することができない。さらに、この場合においても、介在面及び側壁面を同時に研磨するため、端面研磨後に側壁面に線状のキズが残る場合がある。また、特許文献2に記載の研磨ブラシの場合、端面研磨を行っている最中に、この研磨ブラシを積層されたガラス基板の積層方向に揺動させた場合、毛の長い第2のブラシ部は、側壁面も研磨することとなる。このため、この第2ブラシ部によって、側壁面にキズが発生する場合もある。また、第2のブラシ部は、第1のブラシ部に比べて集中的に力がかかるため、複数バッチ連続で端面研磨加工を行った場合には、端面品質のばらつきが大きくなるという問題がある。   On the other hand, in the method for manufacturing a glass substrate for a magnetic recording medium described in Patent Document 2, a polishing brush used for polishing has a rotatable shaft center and a brush portion disposed around the shaft center. The brush portion has a relatively high rigidity, a first brush portion having a relatively short length from the shaft center to the tip of the brush portion, and a relatively low rigidity, from the shaft center to the tip of the brush portion. And a second brush portion having a relatively long length. In the end surface polishing, as the first polishing step, the first brush portion and the second brush portion are brought into contact with the interposition surface and the side wall surface which are the end surfaces of the glass substrate, and the brush is rotated around the axis. Further, as the second polishing stage, only the second brush portion is brought into contact with the end face of the glass substrate in a state where the distance between the end face of the glass substrate and the brush axis is longer than that of the first polishing stage. And rotate the brush around the axis. However, in the first polishing stage, the interposition surface and the side wall surface are polished simultaneously. For this reason, since the 2nd brush part with long hair wears first, it cannot use a polishing brush stably for a long period of time. Further, even in this case, since the intervening surface and the side wall surface are polished simultaneously, a linear flaw may remain on the side wall surface after the end surface polishing. Further, in the case of the polishing brush described in Patent Document 2, when the polishing brush is swung in the stacking direction of the laminated glass substrate during the end face polishing, the second brush portion having long hair Will also polish the side wall surface. For this reason, the second brush portion may cause scratches on the side wall surface. In addition, since the second brush portion is more concentrated than the first brush portion, there is a problem in that the end face quality varies greatly when end face polishing is performed continuously for a plurality of batches. .

そこで、本発明は、側壁面に線状のキズがなく、複数バッチ端面研磨をした場合であっても介在面と側壁面の両方の表面品質を良好に維持することができる磁気ディスク用ガラス基板の製造方法を提供することを目的とする。   Therefore, the present invention provides a glass substrate for a magnetic disk that has no linear scratch on the side wall surface and can maintain the surface quality of both the intervening surface and the side wall surface even when a plurality of batch end faces are polished. It aims at providing the manufacturing method of.

本願発明者は、介在面と側壁面を同時に研磨する従来の端面研磨法では、研磨ブラシの側壁面への押し付けの増大により、ガラス基板の側壁面に線状のキズが発生し易くなることを見出し、また、押し付けを弱くした場合には、側壁面にキズは発生しないが、介在面の表面品質が不十分になることを見出し、本願発明に至っている。   The inventor of the present application shows that in the conventional end surface polishing method in which the intervening surface and the side wall surface are simultaneously polished, linear flaws are likely to occur on the side wall surface of the glass substrate due to an increase in pressing against the side wall surface of the polishing brush. When the heading or pressing is weakened, the side wall surface is not scratched, but the surface quality of the intervening surface is found to be insufficient, and the present invention has been achieved.

本発明の一態様は、中心に円孔を有する円盤状のガラス基板の端面に、研磨ブラシを押し当てて研磨する端面研磨処理を含む磁気ディスク用ガラス基板の製造方法であって、前記ガラス基板の端面は、前記ガラス基板の主表面に対して直交する側壁面と、前記主表面と前記側壁面との間に介在する介在面と、を有し、前記端面研磨処理は、前記研磨ブラシと前記ガラス基板の端面との間に遊離砥粒を含む研磨液を供給して前記研磨ブラシと前記ガラス基板とを相対的に移動させることにより研磨を行う処理であり、前記端面研磨処理は、前記研磨ブラシの毛先部分を介在面に当接させて前記介在面の研磨を少なくとも行う第1処理と、前記第1処理後に、前記介在面の表面粗さを維持した状態で、前記側壁面の研磨を行う第2処理と、を含み、前記第1処理及び前記第2処理で用いる前記研磨ブラシのブラシ毛の長さは同じである、磁気ディスク用ガラス基板の製造方法である。 One aspect of the present invention is a method for manufacturing a glass substrate for a magnetic disk, including an end surface polishing process in which a polishing brush is pressed against an end surface of a disk-shaped glass substrate having a circular hole in the center, the surface being polished. The end surface of the glass substrate has a side wall surface orthogonal to the main surface of the glass substrate, and an intervening surface interposed between the main surface and the side wall surface, and the end surface polishing treatment includes the polishing brush and A polishing liquid containing free abrasive grains is supplied between the end surface of the glass substrate and the polishing brush and the glass substrate are relatively moved to perform polishing, and the end surface polishing processing is performed as described above. A first treatment for polishing at least the interposition surface by bringing the bristles of the polishing brush into contact with the interposition surface; and after the first treatment, in a state where the surface roughness of the interposition surface is maintained, and a second process for polishing, only contains The bristle length of the polishing brushes used in the first process and the second process is the same, a method of manufacturing a glass substrate for a magnetic disk.

このとき、前記第1処理は、前記介在面の表面粗さRzが0.15μm以下になるように研磨し、前記第2処理は、前記介在面の表面粗さを維持しつつ、前記側壁面の表面粗さRzが0.15μm以下になるように研磨する、ことが好ましい。   At this time, the first treatment is performed such that the surface roughness Rz of the interposition surface is 0.15 μm or less, and the second treatment is performed while maintaining the surface roughness of the interposition surface while the side wall surface is maintained. It is preferable to perform polishing so that the surface roughness Rz is 0.15 μm or less.

前記第1処理及び前記第2処理では、研磨中、前記研磨ブラシを前記ガラス基板の厚さ方向に移動させる、ことが好ましい。   In the first process and the second process, it is preferable that the polishing brush is moved in the thickness direction of the glass substrate during polishing.

前記第2処理では、前記研磨ブラシの位置を、前記第1処理における前記研磨ブラシの位置に比べて、前記側壁面から遠ざけた位置に移動して研磨を行う、ことが好ましい。   In the second process, it is preferable that polishing is performed by moving the position of the polishing brush away from the side wall surface as compared with the position of the polishing brush in the first process.

前記介在面を、前記主表面と接続する第1面と、前記第1面に比べて前記側壁面に近く、前記側壁面に接続する第2面とに分けたとき、前記第1処理は、前記介在面の第1面を主として研磨する第3処理と、前記第3処理後に前記介在面の第2面を主として研磨する第4処理と、を含み、前記第4処理では、前記研磨ブラシの位置を、前記第3処理における前記研磨ブラシの位置に比べて、前記側壁面から遠ざけた位置に移動して研磨を行う、ことが好ましい。   When the intermediate surface is divided into a first surface that is connected to the main surface and a second surface that is closer to the side wall surface than the first surface and is connected to the side wall surface, the first treatment is: A third process for mainly polishing the first surface of the interposition surface, and a fourth process for mainly polishing the second surface of the interposition surface after the third process. In the fourth process, It is preferable to perform polishing by moving the position to a position away from the side wall surface as compared with the position of the polishing brush in the third treatment.

上述の磁気ディスク用ガラス基板の製造方法では、側壁面に線状のキズがなく、側壁面および介在面の表面品質を向上できる。   In the above-described method for manufacturing a glass substrate for magnetic disk, there is no linear scratch on the side wall surface, and the surface quality of the side wall surface and the intervening surface can be improved.

(a),(b)は、円盤形状のガラス基板の内周端面、外周端面のそれぞれを、研磨ブラシを用いて研磨する状態を示す図である。(A), (b) is a figure which shows the state which grind | polishes each of the inner peripheral end surface and outer peripheral end surface of a disk-shaped glass substrate using a polishing brush. ガラス基板の研磨を、拡大して説明する図である。It is a figure which expands and demonstrates grinding | polishing of a glass substrate. 本実施形態における磁気ディスク用ガラス基板の製造方法で行う端面研磨処理における、研磨ブラシの中心軸から側壁面までの距離Lの時間的変化の一例を示す図である。It is a figure which shows an example of the time change of the distance L from the center axis | shaft of a grinding | polishing brush to a side wall surface in the end surface grinding | polishing process performed with the manufacturing method of the glass substrate for magnetic discs in this embodiment. 本実施形態における磁気ディスク用ガラス基板の製造方法で行う端面研磨処理における、研磨ブラシの中心軸から側壁面までの距離Lの時間的変化の他の例を示す図である。It is a figure which shows the other example of the time change of the distance L from the center axis | shaft of a grinding | polishing brush to a side wall surface in the end surface grinding | polishing process performed with the manufacturing method of the glass substrate for magnetic discs in this embodiment.

以下、本発明の磁気ディスク用ガラス基板の製造方法について詳細に説明する。なお、本発明において、磁気ディスク用ガラス基板とは、本発明にかかる端面研磨処理が施されたものを意味する。具体的には、例えば、本発明にかかる磁気ディスク用ガラス基板とは、端面研磨処理が施された直後のものであってもよく、また、端面研磨処理を行った後、主表面研磨加工、化学強化加工等の後加工が施され、磁性膜等が成膜される前の状態のものであってもよい。   Hereinafter, the manufacturing method of the glass substrate for magnetic disks of this invention is demonstrated in detail. In addition, in this invention, the glass substrate for magnetic discs means what performed the end surface grinding | polishing process concerning this invention. Specifically, for example, the glass substrate for a magnetic disk according to the present invention may be one immediately after the end surface polishing treatment is performed, or after performing the end surface polishing treatment, It may be in a state before post-processing such as chemical strengthening processing and before the magnetic film or the like is formed.

(本実施形態に用いる研磨の概要)
本実施形態の磁気ディスク用ガラス基板の製造方法では、中心に円孔を有する円盤状のガラス基板が製造される。ガラス基板の端面は、ガラス基板の主表面に対して直交する側壁面と、主表面と側壁面との間に介在する介在面(面取面)と、を有する。本実施形態の磁気ディスク用ガラス基板の製造方法では、ガラス基板の端面に、研磨ブラシを押し当てて研磨する端面研磨処理の処理方法に特徴を備える。
ここで、端面研磨処理は、研磨ブラシとガラス基板の端面との間に遊離砥粒を含む研磨液を供給して研磨ブラシとガラス基板とを相対的に移動させることにより研磨を行う。このとき、端面研磨処理は、介在面の研磨を少なくとも行う第1処理と、第1処理後に、介在面の表面粗さを維持した状態で、側壁面の研磨を行う第2処理と、を含む。
本実施形態では、端面は、ガラス基板の外周側端面であってもよく、内周側端面であってもよい。なお、以下の説明では、中心に円孔が形成されたガラス基板を、スペーサーを介して積層された積層体の円孔部分に研磨ブラシを挿入し、研磨ブラシと積層体との少なくとも一方を回転させてガラス基板の内周側端面を研磨する内周側端面研磨について説明する。
(Outline of polishing used in this embodiment)
In the method for manufacturing a magnetic disk glass substrate according to this embodiment, a disk-shaped glass substrate having a circular hole in the center is manufactured. The end surface of the glass substrate has a side wall surface orthogonal to the main surface of the glass substrate and an intervening surface (chamfered surface) interposed between the main surface and the side wall surface. The method for manufacturing a glass substrate for a magnetic disk according to the present embodiment is characterized by a processing method of an end surface polishing process in which a polishing brush is pressed against the end surface of the glass substrate for polishing.
Here, in the end surface polishing treatment, polishing is performed by supplying a polishing liquid containing free abrasive grains between the polishing brush and the end surface of the glass substrate and relatively moving the polishing brush and the glass substrate. At this time, the end surface polishing process includes a first process for polishing at least the intervening surface, and a second process for polishing the side wall surface while maintaining the surface roughness of the intervening surface after the first process. .
In the present embodiment, the end surface may be the outer peripheral side end surface of the glass substrate or the inner peripheral side end surface. In the following description, a glass substrate having a circular hole formed in the center is inserted into the circular hole portion of the laminated body laminated via a spacer, and at least one of the polishing brush and the laminated body is rotated. The inner peripheral side end surface polishing for polishing the inner peripheral side end surface of the glass substrate will be described.

本実施の形態にかかる研磨処理により、従来のような介在面と側壁面の研磨を同時に行う場合に比べて、研磨ブラシから見て側壁面に比べて遠い位置にある介在面を、研磨残しが無いように研磨することができる。このとき、従来の端面研磨処理と同様に、側壁面も同時に研磨される。このため、従来同様に、側壁面には上述した線状のキズが発生する場合がある。しかし、第1処理後、介在面の表面粗さを維持した状態で、側壁面研磨を行うので、側壁面に発生した線状のキズは消滅し鏡面状態になる。このため、研磨後のガラス基板の側壁面には、線状のキズがなく、側壁面と介在面の表面粗さを小さくすることができる。具体的には、本実施の形態にかかる研磨処理を行うことにより、介在面と側壁面との表面粗さ(最大高さ:Rz)の差を小さくする、具体的には、0.05μm以内とすることができる。また、本実施の形態にかかる研磨処理を行うことにより、介在面および側壁面の表面粗さ(最大高さ:Rz)をそれぞれ0.15μm以下とすることができる。さらに、本実施の形態にかかる研磨処理を行うことにより、介在面および側壁面の算術平均粗さ(Ra)を0.015μm以下、より好ましくは0.010μm以下とすることができる。なお、上記粗さは触針計(測長距離:板厚方向に0.25mm)を用いて測定したものである。   By the polishing treatment according to the present embodiment, compared to the conventional case where the intervening surface and the side wall surface are polished simultaneously, the intervening surface located farther from the side wall surface as viewed from the polishing brush is left unpolished. It can be polished so that there is no. At this time, the side wall surface is also polished at the same time as in the conventional end surface polishing process. For this reason, as described above, the above-described linear scratch may occur on the side wall surface. However, since the side wall surface polishing is performed after the first treatment while maintaining the surface roughness of the intervening surface, the linear scratches generated on the side wall surface disappear and become a mirror surface state. For this reason, there is no linear flaw on the side wall surface of the polished glass substrate, and the surface roughness of the side wall surface and the interposition surface can be reduced. Specifically, by performing the polishing process according to the present embodiment, the difference in surface roughness (maximum height: Rz) between the interposition surface and the side wall surface is reduced, specifically, within 0.05 μm. It can be. In addition, by performing the polishing treatment according to the present embodiment, the surface roughness (maximum height: Rz) of the intervening surface and the side wall surface can be set to 0.15 μm or less. Furthermore, by performing the polishing treatment according to the present embodiment, the arithmetic average roughness (Ra) of the intervening surface and the side wall surface can be made 0.015 μm or less, more preferably 0.010 μm or less. The roughness is measured using a stylus meter (measurement distance: 0.25 mm in the plate thickness direction).

例えば、1つの研磨ブラシを用いて端面研磨処理を行う。このとき、研磨ブラシで効率よく研磨できる部分は、研磨ブラシのブラシ毛の毛先部分である。毛先部分と毛の基部との間の中間部分である腹部分は、研磨を効率よく行えない。このため、研磨を効率よく行う毛先部分が介在面に当接してやや撓む程度の位置に研磨ブラシを固定して介在面の研磨(第1処理)を行う。このとき、側壁面は研磨ブラシのブラシ毛の腹部分が当接するので、上記腹部分と側壁面との間にある研磨砥粒や塵等の異物粒子によって側壁面が擦られて線状のキズが発生する場合がある。しかし、この後、研磨ブラシの位置を、毛先部分が側壁面に当接してやや撓む程度の位置に移動し、固定して側壁面の研磨(第2処理)を行う。このとき、研磨ブラシは、介在面と略接触しないので、研磨はされない。このように、介在面の研磨後に側壁面の研磨が行われるので、線状のキズが第1処理で発生しても第2処理において研磨によって消失する。すなわち、本実施形態の研磨方法は、研磨後の側壁面には線状のキズはなく、表面粗さの小さい鏡面状態にすることができる。
以下、本実施形態の磁気ディスク用ガラス基板の製造方法を詳細に説明する。
For example, end polishing is performed using one polishing brush. At this time, the portion that can be efficiently polished with the polishing brush is the tip of the brush hair of the polishing brush. The abdominal part, which is an intermediate part between the hair tip part and the hair base part, cannot be polished efficiently. For this reason, the polishing surface is polished (first treatment) by fixing the polishing brush at a position where the bristle portion that efficiently polishes is in contact with the interposed surface and slightly bent. At this time, the abdomen of the brush bristles of the polishing brush comes into contact with the side wall surface, so that the side wall surface is rubbed by foreign particles such as abrasive grains and dust between the abdomen portion and the side wall surface. May occur. However, after that, the position of the polishing brush is moved to a position where the bristle portion comes into contact with the side wall surface and is slightly bent and fixed, and the side wall surface is polished (second processing). At this time, since the polishing brush does not substantially contact the intervening surface, it is not polished. Thus, since the side wall surface is polished after the interposed surface is polished, even if a linear scratch occurs in the first process, it disappears by the polishing in the second process. That is, the polishing method of the present embodiment has a mirror surface state in which the side wall surface after polishing is free from linear scratches and has a small surface roughness.
Hereinafter, the manufacturing method of the glass substrate for magnetic disks of this embodiment is demonstrated in detail.

本実施形態の磁気ディスク用ガラス基板の製造方法の一例を以下説明する。
先ず、一対の主表面を有する板状の磁気ディスク用ガラス基板の素材となるガラスブランクを成形する。次に、このガラスブランクを適宜加工して、中心部分に円孔のあいた、エッジが面取り加工された円盤形状のガラス基板を作製する。この後、端面研磨処理および主表面研磨処理を行う。端面研磨処理、主表面研磨処理は、必要に応じて、複数の処理に分けて行ってもよい。また、主表面研磨処理の前にガラス基板の主表面や端面の研削処理を行ってもよい。このとき各処理の順序は適宜決定してよい。
以下、各処理について、説明する。
An example of a method for producing the magnetic disk glass substrate of the present embodiment will be described below.
First, a glass blank as a material for a plate-like glass substrate for a magnetic disk having a pair of main surfaces is formed. Next, this glass blank is appropriately processed to produce a disk-shaped glass substrate having a chamfered edge with a circular hole in the center. Thereafter, end face polishing and main surface polishing are performed. The end surface polishing process and the main surface polishing process may be performed in a plurality of processes as necessary. Moreover, you may perform the grinding process of the main surface and end surface of a glass substrate before a main surface polishing process. At this time, the order of each process may be determined as appropriate.
Hereinafter, each process will be described.

(a)ガラスブランク成形処理
ガラスブランクの成形では、例えばフロート法の他に、例えばプレス成形法を用いることもできる。さらに、ダウンドロー法、リドロー法、フュージョン法などの公知の製造方法を用いて製造することができる。これらの公知の製造方法で作られた板状ガラスに対し、適宜形状加工を行うことによって磁気ディスク用ガラス基板の元となる円板状のガラスブランクが切り出される。
(A) Glass blank forming treatment In forming the glass blank, for example, a press forming method can be used in addition to the float method. Furthermore, it can manufacture using well-known manufacturing methods, such as a downdraw method, a redraw method, and a fusion method. A disk-shaped glass blank serving as a base of the magnetic disk glass substrate is cut out by appropriately performing shape processing on the plate-shaped glass produced by these known manufacturing methods.

(b)形状加工処理
次に、形状加工処理が行われる。形状加工処理では、ガラスブランク成形処理後、公知の加工方法を用いて円孔を形成することにより、円孔があいた円盤形状のガラス基板を得る。その後、さらに面取りを実施する。これにより、ガラス基板の端面には、主表面と直交している側壁面と、側壁面と主表面を繋ぐ介在面(面取面)が形成される。
(B) Shape processing processing Next, shape processing processing is performed. In the shape processing, a disk-shaped glass substrate having a circular hole is obtained by forming a circular hole using a known processing method after the glass blank forming process. Thereafter, further chamfering is performed. Thereby, the side wall surface orthogonal to the main surface and the interposition surface (chamfering surface) connecting the side wall surface and the main surface are formed on the end surface of the glass substrate.

(c)端面研磨処理
次にガラス基板の端面研磨処理が行われる。端面研磨処理は、研磨ブラシとガラス基板の端面との間に遊離砥粒を含む研磨液を供給して研磨ブラシとガラス基板とを相対的に移動させることにより研磨を行う処理である。端面研磨では、ガラス基板の内周側端面及び外周側端面が鏡面状態になる。このとき、酸化セリウム等の微粒子を遊離砥粒として含むスラリーが用いられる。端面研磨を行うことにより、ガラス基板の端面での塵等の異物粒子が付着した汚染、ダメージあるいはキズ等の損傷の除去を行うことができる。これにより、このガラス基板を用いて磁気ディスクを製造した場合であっても、サーマルアスペリティの発生を防止することができる。また、ナトリウムおよび/またはカリウム等のコロージョンの原因となるイオン析出の発生を防止することができる観点からは、少なくとも側壁面および介在面の表面粗さ(最大高さ:Rz)が0.15μm以下となるように研磨することが好ましく、0.10μm以下となるように研磨することがより好ましい。また、上記観点においては、少なくとも側壁面の表面粗さ(Ra)が、0.015μm以下であることが好ましく0.010μm以下であることがより好ましい。なお、上記粗さは触針計(測長距離:板厚方向に0.25mm)を用いて測定したものである。端面研磨処理については、後述する。
(C) End surface polishing treatment Next, an end surface polishing treatment of the glass substrate is performed. The end surface polishing process is a process for performing polishing by supplying a polishing liquid containing loose abrasive grains between the polishing brush and the end surface of the glass substrate and relatively moving the polishing brush and the glass substrate. In the end surface polishing, the inner peripheral side end surface and the outer peripheral side end surface of the glass substrate are in a mirror state. At this time, a slurry containing fine particles such as cerium oxide as free abrasive grains is used. By performing the end surface polishing, it is possible to remove contamination such as dust, foreign matter particles such as dust on the end surface of the glass substrate, damage, or scratches. Thereby, even if it is a case where a magnetic disc is manufactured using this glass substrate, generation | occurrence | production of thermal asperity can be prevented. Further, from the viewpoint of preventing the occurrence of ion precipitation that causes corrosion such as sodium and / or potassium, at least the surface roughness (maximum height: Rz) of the side wall surface and the interposed surface is 0.15 μm or less. It is preferable to polish so as to become 0.10, more preferably 0.10 μm or less. Moreover, in the said viewpoint, it is preferable that the surface roughness (Ra) of at least a side wall surface is 0.015 micrometer or less, and it is more preferable that it is 0.010 micrometer or less. The roughness is measured using a stylus meter (measurement distance: 0.25 mm in the plate thickness direction). The end face polishing process will be described later.

(d)第1研磨処理
次に、ガラス基板の主表面に第1研磨処理が施される。具体的には、ガラス基板を、両面研磨装置に装着される保持部材(キャリア)に設けられた保持孔内に保持しながらガラス基板の両側の主表面の研磨が行われる。なお、表面粗さについてさらに低減したり、より精密な調整を行うために、第1研磨処理を複数の研磨処理に分けて実施してもよい。
(D) First polishing treatment Next, a first polishing treatment is performed on the main surface of the glass substrate. Specifically, the main surfaces on both sides of the glass substrate are polished while holding the glass substrate in a holding hole provided in a holding member (carrier) attached to the double-side polishing apparatus. In addition, in order to further reduce the surface roughness or perform more precise adjustment, the first polishing process may be divided into a plurality of polishing processes.

(e)化学強化処理
ガラス基板は適宜化学強化することができる。化学強化液として、例えば硝酸カリウム,硝酸ナトリウム、またはそれらの混合物を加熱して得られる溶融液を用いることができる。そして、ガラス基板を化学強化液に浸漬することによって、ガラス基板の表層にあるガラス組成中のリチウムイオンやナトリウムイオンが、それぞれ化学強化液中のイオン半径が相対的に大きいナトリウムイオンやカリウムイオンにそれぞれ置換されることで表層部分に圧縮応力層が形成され、ガラス基板が強化される。
化学強化処理を行うタイミングは、適宜決定することができるが、化学強化処理の後に研磨処理を行うようにすると、表面の平滑化とともに化学強化処理によってガラス基板の表面に固着した異物を取り除くことができるので特に好ましい。
(E) Chemical strengthening treatment The glass substrate can be appropriately chemically strengthened. As the chemical strengthening liquid, for example, a molten liquid obtained by heating potassium nitrate, sodium nitrate, or a mixture thereof can be used. Then, by immersing the glass substrate in the chemical strengthening solution, lithium ions and sodium ions in the glass composition on the surface of the glass substrate are converted into sodium ions and potassium ions having relatively large ion radii in the chemical strengthening solution, respectively. By replacing each, a compressive stress layer is formed in the surface layer portion, and the glass substrate is strengthened.
The timing of performing the chemical strengthening treatment can be determined as appropriate. However, if the polishing treatment is performed after the chemical strengthening treatment, the foreign matter fixed to the surface of the glass substrate by the chemical strengthening treatment can be removed together with the smoothing of the surface. This is particularly preferable because it can be performed.

(f)第2研磨(最終研磨)処理
次に、化学強化処理後のガラス基板に第2研磨処理が施される。第2研磨においても、第1研磨に用いる両面研磨装置と同様の構成を有する両面研磨装置が用いられる。第2研磨の後、ガラス基板Gは洗浄され、磁気ディスク用ガラス基板が作製される。
(F) Second Polishing (Final Polishing) Process Next, a second polishing process is performed on the glass substrate after the chemical strengthening process. Also in the second polishing, a double-side polishing apparatus having the same configuration as the double-side polishing apparatus used for the first polishing is used. After the second polishing, the glass substrate G is washed to produce a magnetic disk glass substrate.

(端面研磨処理)
ここで本発明にかかる端面研磨処理についてより詳細に説明する。端面研磨処理は、介在面の研磨を少なくとも行う第1処理と、この第1処理後に、介在面の表面粗さを維持した状態で、側壁面の研磨を行う第2処理と、を含む。第1処理及び第2処理では、多数積層されたガラス基板の端面と研磨ブラシとの間に遊離砥粒を含む研磨液を供給する。研磨液の供給手段としては、シャワーによる吹き付け、あるいは複数の研磨液供給ノズルより研磨液を噴出する態様が挙げられる。また、研磨液中にガラス基板の積層体と研磨ブラシを浸し、研磨液中で端面研磨をしてもよい。
遊離砥粒としては、酸化セリウム、酸化鉄、酸化マグネシウム、酸化ジルコニウム、酸化マンガン等の研磨剤を用いることができるが、特に、加工速度が速い観点では、酸化セリウムを用いるのが好ましい。研磨液の温度は、例えば25℃〜40℃程度が好ましい。また、研磨液をガラス基板の積層体に対して噴きかけて供給する場合、供給時点での温度と、ガラス基板の積層体と研磨ブラシとの間に供給された端面が研磨された後の研磨液の温度との差、換言すると、研磨装置へ供給される時点での研磨液の温度と、研磨装置から排出される研磨液の温度との差は、5度以下が好ましく、3度以下がより好ましく、1度以下が特に好ましい。上記条件で端面研磨を行うことで、積層体を構成している個々のガラス基板間の端面品質(表面あらさ)のバラツキを低減させることができる。
(End face polishing treatment)
Here, the end surface polishing treatment according to the present invention will be described in more detail. The end surface polishing process includes a first process that polishes at least the interposed surface, and a second process that polishes the side wall surface while maintaining the surface roughness of the interposed surface after the first process. In the first process and the second process, a polishing liquid containing loose abrasive grains is supplied between the end surface of the glass substrate laminated in large numbers and the polishing brush. Examples of the means for supplying the polishing liquid include spraying with a shower or a mode in which the polishing liquid is ejected from a plurality of polishing liquid supply nozzles. Further, the laminated body of the glass substrate and the polishing brush may be immersed in the polishing liquid, and end face polishing may be performed in the polishing liquid.
Abrasives such as cerium oxide, iron oxide, magnesium oxide, zirconium oxide, and manganese oxide can be used as the free abrasive grains. In particular, cerium oxide is preferably used from the viewpoint of high processing speed. The temperature of the polishing liquid is preferably about 25 ° C. to 40 ° C., for example. In addition, when the polishing liquid is supplied by spraying onto the glass substrate laminate, the polishing is performed after the temperature at the time of supply and the end surface supplied between the glass substrate laminate and the polishing brush are polished. The difference between the temperature of the liquid and, in other words, the difference between the temperature of the polishing liquid when supplied to the polishing apparatus and the temperature of the polishing liquid discharged from the polishing apparatus is preferably 5 degrees or less, preferably 3 degrees or less. More preferred is 1 degree or less. By performing end face polishing under the above conditions, variations in end face quality (surface roughness) between individual glass substrates constituting the laminate can be reduced.

図1(a)は、円盤形状のガラス基板10の内周端面を、研磨ブラシ12を用いて研磨する状態を示す図である。図2は、ガラス基板の研磨を、拡大して説明する図である。図2では、符号10aは介在面を、符号10bは側壁面を示している。端面研磨処理を行う場合、複数のガラス基板を、介在部材14(スペーサー)を挟んで積層し、積層して得られたガラス基板の積層体を研磨ブラシ12で纏めて研磨する。研磨ブラシ12は、中心軸12aと、中心軸12aから径方向外側に直線状に延びる、密に植毛したブラシ毛12bとを含むものであってもよく、また、中心軸12aに対してブラシ毛12bを螺旋状に巻きつけたものであってもよい。   FIG. 1A is a diagram showing a state in which the inner peripheral end surface of the disk-shaped glass substrate 10 is polished using a polishing brush 12. FIG. 2 is an enlarged view for explaining the polishing of the glass substrate. In FIG. 2, the code | symbol 10a has shown the interposition surface, and the code | symbol 10b has shown the side wall surface. When the end surface polishing treatment is performed, a plurality of glass substrates are stacked with the intervening member 14 (spacer) interposed therebetween, and the stacked body of the glass substrates obtained by stacking is polished together with the polishing brush 12. The polishing brush 12 may include a central shaft 12a and brush hairs 12b that are closely planted and extend linearly outward from the central shaft 12a. 12b may be spirally wound.

ガラス基板10の積層体は、それぞれのガラス基板10の相対位置が変化しないように保持具で保持されている。そして、保持具は、図示されない駆動モータの回転軸に接続されている。したがってガラス基板10の積層体は、駆動モータの回転に従って回転する。また、研磨ブラシ12の中心軸12aは、図示されない積層体を回転させる駆動モータとは別の駆動モータの回転軸に接続されている。したがって、研磨ブラシ12aは、この駆動モータの回転に従って回転する。こうして、ガラス基板10と研磨ブラシ12との間の相対的な移動によってガラス基板10の端面が研磨される。ガラス基板10の積層体の回転方向と研磨ブラシ12の回転方向は同じであってもよいし、異なってもよい。
ここで、第1処理は、少なくとも介在面を研磨する。このとき、介在面の他に側壁面が研磨されてもよい。第1処理は、介在面の表面粗さの算術平均粗さRa(JIS B 0601:2001)が0.015μmm以下になるように研磨することが好ましく、0.010μm以下になるようにすることがより好ましい。また、第1処理は、介在面の表面粗さ(最大高さ:Rz)が0.15μm以下となるように研磨することが好ましく、0.10μm以下となるように研磨することがより好ましい。
第2処理は、第1処理後の側壁面の表面粗さ、例えばRaを維持しつつ、側壁面の表面粗さの算術平均粗さRaが0.015μm以下になるように研磨することが好ましく、0.010μm以下になるようにすることがより好ましい。また、第2処理は、第1処理後の側壁面の表面粗さ、例えばRzを維持しつつ、側壁面の表面粗さ(最大高さ:Rz)が0.15μm以下となるように研磨することが好ましく、0.10μm以下となるように研磨することがより好ましい。
なお、上記側壁面の表面粗さは触針計(測長距離:板厚方向に0.25mm)を用いて測定したものである。一方介在面の表面粗さについても上記触針計(測長距離:円周方向に0.25mm)を用いて測定したものである。
第1処理では、介在面について研磨残しが無いように研磨ブラシ12の毛先が介在面の最も窪んだ位置に当接するように位置決めして研磨を行う。なお、毛先がやや撓む程度の位置に研磨ブラシ12を位置決めしてもよい。このとき、図2に示すように、側壁面には、研磨ブラシ12の腹部分が当接する。このため、腹部分で押圧された遊離砥粒や異物粒子によって側壁面は擦られて線状のキズが側壁面に発生する場合がある。
The laminated body of the glass substrate 10 is hold | maintained with the holder so that the relative position of each glass substrate 10 may not change. And the holder is connected to the rotating shaft of the drive motor which is not illustrated. Therefore, the laminated body of the glass substrate 10 rotates according to rotation of a drive motor. Further, the central shaft 12a of the polishing brush 12 is connected to a rotation shaft of a drive motor different from the drive motor that rotates a laminate (not shown). Therefore, the polishing brush 12a rotates according to the rotation of the drive motor. In this way, the end surface of the glass substrate 10 is polished by the relative movement between the glass substrate 10 and the polishing brush 12. The rotation direction of the laminated body of the glass substrate 10 and the rotation direction of the polishing brush 12 may be the same or different.
Here, the first treatment polishes at least the intervening surface. At this time, the side wall surface may be polished in addition to the intervening surface. In the first treatment, polishing is preferably performed so that the arithmetic average roughness Ra (JIS B 0601: 2001) of the surface roughness of the intervening surface is 0.015 μm or less, and 0.010 μm or less. More preferred. In the first treatment, polishing is preferably performed so that the surface roughness (maximum height: Rz) of the intervening surface is 0.15 μm or less, and more preferably 0.10 μm or less.
The second treatment is preferably polished so that the arithmetic mean roughness Ra of the surface roughness of the sidewall surface is 0.015 μm or less while maintaining the surface roughness of the sidewall surface after the first treatment, for example, Ra. More preferably, the thickness is 0.010 μm or less. In the second treatment, the surface roughness (maximum height: Rz) of the side wall surface is polished to be 0.15 μm or less while maintaining the surface roughness of the side wall surface after the first treatment, for example, Rz. Preferably, polishing is performed so that the thickness is 0.10 μm or less.
The surface roughness of the side wall surface was measured using a stylus meter (measurement distance: 0.25 mm in the plate thickness direction). On the other hand, the surface roughness of the intervening surface was also measured using the stylus meter (measurement distance: 0.25 mm in the circumferential direction).
In the first treatment, polishing is performed by positioning the bristle tip of the polishing brush 12 so as to contact the most depressed position of the interposition surface so that there is no polishing residue on the interposition surface. Note that the polishing brush 12 may be positioned at a position where the bristles are slightly bent. At this time, as shown in FIG. 2, the belly portion of the polishing brush 12 abuts on the side wall surface. For this reason, the side wall surface may be rubbed by loose abrasive grains or foreign particles pressed at the belly portion, and a linear scratch may occur on the side wall surface.

第2処理では、研磨ブラシ12の位置を、第1処理における研磨ブラシ12の位置に比べて、側壁面から遠ざけた位置に移動して研磨を行う。このとき、研磨ブラシ12の毛先が側壁面に当接するように位置決めして研磨を行う。なお、毛先がやや撓む程度の位置に研磨ブラシ12を位置決めしてもよい。   In the second process, polishing is performed by moving the position of the polishing brush 12 to a position farther from the side wall than the position of the polishing brush 12 in the first process. At this time, polishing is performed by positioning so that the tip of the polishing brush 12 contacts the side wall surface. Note that the polishing brush 12 may be positioned at a position where the bristles are slightly bent.

図3は、端面研磨処理における、研磨ブラシ12の中心軸12aから側壁面までの距離Lの時間的変化の一例を示す図である。
まず、端面研磨処理では、研磨ブラシ12の距離Lを距離L1に固定して時間0から時間T1まで研磨する。この距離L1は、研磨ブラシ12の毛先が介在面の最も窪んだ位置に当接する距離である。したがって、距離Lを距離L1に固定して時間T1まで研磨する処理が第1処理である。次に、研磨ブラシ12の距離Lを距離L1から距離L2に移動し固定して時間T1から時間T2まで研磨する。この距離L2は、研磨ブラシ12の毛先が側壁面に当接する距離である。したがって、距離Lを距離L2(距離L2>距離L1)に固定して時間T2まで研磨する処理が第2処理である。このときの研磨時間T1と研磨時間(T2−T1)は、ガラス基板10の介在面と側壁面との表面粗さ(Rz)がそれぞれ0.15μm以下となり、かつ、介在面と側壁面との表面粗さ(Rz)の差が小さくする、具体的には、上記差が0.05μm以内となるように適宜設定すればよい。
なお、上記の説明では、距離L2と距離L1とをそれぞれ固定して研磨する構成を説明したが、ガラス基板10の介在面と側壁面との表面粗さ(最大高さ:Rz)がそれぞれ0.15μm以下となり、かつ、介在面と側壁面との表面粗さ(Rz)の差が0.05μm以内となるように、距離L2から距離L1までの間を時間経過とともに連続的または断続的に移動させて研磨する構成としてもよい。
これにより、このガラス基板10を用いて磁気ディスクとした際に、介在面および側壁面からの発塵を抑制することができる。
FIG. 3 is a diagram illustrating an example of a temporal change in the distance L from the central axis 12a of the polishing brush 12 to the side wall surface in the end surface polishing process.
First, in the end surface polishing treatment, the distance L of the polishing brush 12 is fixed to the distance L 1 and polishing is performed from time 0 to time T 1 . This distance L 1 is a distance at which the tip of the polishing brush 12 contacts the most depressed position of the intervening surface. Therefore, the first process is a process in which the distance L is fixed to the distance L 1 and the polishing is performed until the time T 1 . Next, the distance L of the polishing brush 12 is moved from the distance L 1 to the distance L 2 and fixed, and polishing is performed from time T 1 to time T 2 . This distance L 2 is, bristle tips of the polishing brush 12 is the distance in contact with the side wall surface. Therefore, the process of polishing until time T 2 while fixing the distance L to the distance L 2 (distance L 2 > distance L 1 ) is the second process. The polishing time T 1 and the polishing time (T 2 -T 1 ) at this time are such that the surface roughness (Rz) between the interposed surface and the side wall surface of the glass substrate 10 is 0.15 μm or less, and the interposed surface and side What is necessary is just to set suitably so that the difference of the surface roughness (Rz) with a wall surface may be made small, specifically, the said difference will be less than 0.05 micrometer.
In the above description, the structure in which the distance L 2 and the distance L 1 are fixed and polished is described, but the surface roughness (maximum height: Rz) between the interposition surface and the side wall surface of the glass substrate 10 is described. each becomes 0.15μm or less, and, as the difference in surface roughness between the intervening surface and the side wall surface (Rz) is within 0.05 .mu.m, continuously over time between the distance L 2 to a distance L 1 Or it is good also as a structure which moves by grinding | polishing intermittently.
Thereby, when this glass substrate 10 is used as a magnetic disk, dust generation from the intervening surface and the side wall surface can be suppressed.

このように、第1処理及び第2処理で用いる研磨ブラシ12は同じブラシを用いるので、ブラシ毛の長さは同じである。したがって、従来のように、長いブラシ毛が早く摩耗することはないので、長期間安定してブラシを使用することができる。また、介在面の研磨及び側壁面の研磨を場所に拠らず均一かつ効率よく研磨するために、研磨ブラシ12をガラス基板10の厚さ方向に移動させることが好ましい。このような研磨ブラシ12の移動により、ブラシ毛の長さが同じである研磨ブラシ12を用いることで、均一かつ効率のよい研磨が可能になる。従来のように、毛の長いブラシ毛と毛の短いブラシ毛を有する研磨ブラシを用いた場合、ブラシ毛の長短により、均一かつ効率よく研磨することはできない。長いブラシ毛がガラス基板の端面に当接する場合、短いブラシ毛は端面に当接しない。短いブラシ毛の端面を当接させる場合、長いブラシ毛は、腹部分が当接するので、側壁面に線状のキズを形成し易い。この点で、ブラシ毛の長さがいずれの位置においても同じである研磨ブラシを用いることが好ましい。   Thus, since the same brush is used for the polishing brush 12 used in the first process and the second process, the lengths of the brush hairs are the same. Therefore, unlike conventional ones, long brush hairs do not wear quickly, so that the brush can be used stably for a long period of time. Further, it is preferable to move the polishing brush 12 in the thickness direction of the glass substrate 10 in order to polish the intervening surface and the side wall surface uniformly and efficiently regardless of the location. By such movement of the polishing brush 12, uniform and efficient polishing is possible by using the polishing brush 12 having the same bristle length. When a polishing brush having long bristles and short bristles is used as in the prior art, polishing cannot be performed uniformly and efficiently due to the length of the bristles. When long brush bristles contact the end surface of the glass substrate, short brush hairs do not contact the end surface. When the end surfaces of the short brush hairs are brought into contact with each other, the long brush hairs are brought into contact with the abdomen, so that it is easy to form a linear scratch on the side wall surface. In this regard, it is preferable to use a polishing brush having the same bristle length at any position.

また、介在面を、ガラス基板10の主表面と接続する最も窪んだ部分に位置する介在面であるディープ介在面(第1面)と、このディープ介在面に比べて側壁面に近く、側壁面に接続する、奥行きの浅い部分に位置する介在面であるシャロウ介在面(第2面)とに分けたとき、第1処理は、ディープ介在面を主として研磨する第3処理と、第3処理後に、研磨ブラシ12の位置を、第3処理における研磨ブラシ12の位置に比べて、側壁面から遠ざけた位置に移動してシャロウ介在面を主として研磨する第4処理と、を含んでもよい。すなわち、ディープ介在面を研磨した後、シャロウ介在面を研磨することにより、より確実に介在面の研磨残しを抑制することができる。図4は、端面研磨処理における、研磨ブラシ12の中心軸12aから側壁面までの距離Lの時間的変化の他の例を示す図である。   Moreover, the interposition surface is closer to the side wall surface than the deep interposition surface (first surface), which is the interposition surface located in the most recessed portion connected to the main surface of the glass substrate 10, and the side wall surface. The first process includes a third process of mainly polishing the deep interposition surface, and a third process after the third process. And a fourth process in which the position of the polishing brush 12 is moved to a position farther from the side wall surface than the position of the polishing brush 12 in the third process to mainly polish the shallow intervening surface. That is, by polishing the shallow intervening surface after polishing the deep interposing surface, it is possible to more reliably suppress the polishing residue of the intervening surface. FIG. 4 is a diagram illustrating another example of a temporal change in the distance L from the central axis 12a of the polishing brush 12 to the side wall surface in the end surface polishing process.

端面研磨処理では、研磨ブラシ12の距離Lを距離L1に固定して時間0から時間T1まで研磨する(第3処理)。この距離L1は、研磨ブラシ12の毛先がディープ介在面の位置に当接しかつ毛先がやや撓む程度の距離である。次に、研磨ブラシ12の距離Lを距離L1から距離L3に移動し固定して時間T1から時間T3まで研磨する(第4処理)。この距離L3は、研磨ブラシ12の毛先がシャロウ介在面に当接しかつ毛先がやや撓む程度の距離である。
したがって距離L3は距離L1より大きい。次に、研0磨ブラシ12の距離Lを距離L3から距離L2に移動し固定して時間T3から時間T2まで研磨する(第2処理)。この距離L2は、研磨ブラシ12の毛先が側壁面に当接しかつ毛先がやや撓む程度の距離である。したがって距離L2は距離L3より大きい。
なお、上記の説明では、ガラス基板10の内周側端面を研磨する構成について説明したが、図1(b)に示すように、研磨ブラシを用いて外周側端面を研磨する構成についても本発明を適用することができる。
また、上記の説明では、研磨ブラシとガラス基板10の積層体の相対距離を変化させてガラス基板10の側壁面および介在面の両方を研磨する構成について説明したが、介在面および側壁面の表面粗さを良好にし、かつ、側壁面に形成される恐れのあるキズを防止する方法としては、上記以外の方法を用いてもよい。
例えば、外周側端面の研磨において、介在面を主として研磨する第1処理と、側壁面を主として研磨する第2処理とで、研磨砥粒の砥粒径を変化させてもよい。具体的には、介在面を研磨する際には第2処理と比べて砥粒径の小さなスラリーを用いて、このスラリーを介在面に供給して研磨し、側壁面を研磨する際には、第1処理と比べて砥粒径の大きなスラリーを用い、このスラリーを側壁面に供給して研磨するようにしてもよい。
また、研磨ブラシとガラス基板10の積層体の相対距離を変化させる構成に加えて、第1処理と第2処理とでガラス基板と研磨ブラシとの相対速度(回転数)を変えてもよい。例えば、第1処理を第2処理に比べて高速で回転させ、第2処理を第1処理に比べて低速で回転するようにして側壁面および介在面を研磨してもよい。
In the end surface polishing process, the distance L of the polishing brush 12 is fixed to the distance L 1 and polishing is performed from time 0 to time T 1 (third process). This distance L 1 is a distance such that the bristles of the polishing brush 12 are in contact with the deep interposition surface and the bristles are slightly bent. Next, the distance L of the polishing brush 12 is moved from the distance L 1 to the distance L 3 and fixed, and polishing is performed from time T 1 to time T 3 (fourth process). This distance L 3 is a distance such that the bristles of the polishing brush 12 are in contact with the shallow intervening surface and the bristles are slightly bent.
Thus the distance L 3 is greater than the distance L 1. Next, move the distance L Ken 0 polishing brush 12 from the distance L 3 to a distance L 2 is polished from a fixed to time T 3 to time T 2 (second processing). This distance L 2 is, bristle tips of the polishing brush 12 is distance enough to flex slightly abuts and hair on the side wall surface. Therefore, the distance L 2 is larger than the distance L 3 .
In the above description, the configuration for polishing the inner peripheral side end surface of the glass substrate 10 has been described. However, as shown in FIG. 1B, the configuration for polishing the outer peripheral side end surface using a polishing brush is also disclosed. Can be applied.
In the above description, the configuration in which the relative distance between the polishing brush and the laminate of the glass substrate 10 is changed to polish both the side wall surface and the interposed surface of the glass substrate 10 has been described. Methods other than those described above may be used as a method for improving the roughness and preventing scratches that may be formed on the side wall surface.
For example, in the polishing of the end face on the outer peripheral side, the abrasive grain size of the polishing abrasive grains may be changed between a first process that mainly polishes the intervening surface and a second process that mainly polishes the side wall surface. Specifically, when polishing the intervening surface, using a slurry having a smaller abrasive particle size compared to the second treatment, supplying and polishing this slurry to the intervening surface, when polishing the side wall surface, A slurry having a larger abrasive particle size than that in the first treatment may be used, and this slurry may be supplied to the side wall surface for polishing.
Moreover, in addition to the structure which changes the relative distance of the laminated body of a grinding | polishing brush and the glass substrate 10, you may change the relative speed (rotation speed) of a glass substrate and a grinding | polishing brush by a 1st process and a 2nd process. For example, the side wall surface and the interposed surface may be polished by rotating the first process at a higher speed than the second process and rotating the second process at a lower speed than the first process.

[実験例]
本実施形態の効果を確認するために、3つの異なる研磨方法(実施例、従来例1、従来例2)によりガラス基板の端面研磨を行った。
端面研磨対象のガラス基板には、外径65mm、厚さ0.8mmの円盤形状のガラス基板を用いた。ガラス基板は、100枚を積層して積層体としたものを端面研磨することを1バッチとし、10バッチの間、上記研磨ブラシを変更することなく端面研磨を行った。後述する実施例、従来例1では、回転軸からの長さが同じであるブラシ毛で構成された研磨ブラシを用いた。従来例2では、研磨ブラシに、回転軸からの長さが短いブラシ毛と、長いブラシ毛が交互に配列されている研磨ブラシを用いた。遊離砥粒としては、酸化セリウムを用いた。ガラス基板の積層体は、遊離砥粒を含んだスラリー液中に浸した。研磨ブラシの回転速方向と、ガラス基板の回転方向とが互いに逆方向になるように回転させて端面研磨を行った。
[Experimental example]
In order to confirm the effect of this embodiment, the end surface of the glass substrate was polished by three different polishing methods (Example, Conventional Example 1 and Conventional Example 2).
A disk-shaped glass substrate having an outer diameter of 65 mm and a thickness of 0.8 mm was used as the glass substrate to be polished. One batch of glass substrates was laminated by laminating 100 sheets to make a laminated body, and edge polishing was performed for 10 batches without changing the polishing brush. In the examples described below and Conventional Example 1, a polishing brush composed of brush bristles having the same length from the rotating shaft was used. In Conventional Example 2, a polishing brush in which short brush hairs and long brush hairs from the rotation axis are alternately arranged is used as the polishing brush. Cerium oxide was used as the loose abrasive. The laminated body of glass substrates was immersed in a slurry liquid containing free abrasive grains. End face polishing was performed by rotating the polishing brush so that the rotation speed direction and the rotation direction of the glass substrate were opposite to each other.

実施例では、図3に示すように、第1処理と第2処理とで、研磨ブラシの回転軸とガラス基板との距離が変化するように端面研磨を行った。一方、従来例1では、同じ長さのブラシ毛を有する研磨ブラシを用いて、研磨ブラシの回転軸とガラス基板との距離を一定に保ったまま、介在面と側壁面を同時に研磨した。また、従来例2では、特許文献2に開示されているように、剛性が相対的に高く、軸心からブラシ部の先端までの長さが相対的に短い第1のブラシ部と、剛性が相対的に低く、軸心からブラシ部の先端までの長さが相対的に長い第2のブラシ部とを少なくとも備える研磨ブラシを用いた。端面研磨では、第1のブラシ部と第2のブラシ部とをガラス基板の介在面と側壁面に接触させて研磨ブラシを回転させて、端面研磨を行った。なお、実施例、比較例1、および比較例2について、それぞれ同じ時間となるように端面研磨を行った。
そして、実施例、従来例1,2で得られた1バッチ100枚で10バッチ連続して端面研磨を行ったガラス基板の側壁面を顕微鏡観察により、側壁面に線状のキズがあるか否かを調べた。また、それぞれについて介在面と側壁面との表面粗さ(Ra,Rz)を求めるとともに、1枚のガラス基板における介在面と側壁面との表面粗さ(Rz)の差および、10バッチ間での表面品質のバラツキを評価した。
In the example, as shown in FIG. 3, end face polishing was performed so that the distance between the rotating shaft of the polishing brush and the glass substrate was changed between the first process and the second process. On the other hand, in Conventional Example 1, using a polishing brush having the same length of bristles, the interposition surface and the side wall surface were simultaneously polished while keeping the distance between the rotating shaft of the polishing brush and the glass substrate constant. Further, in the conventional example 2, as disclosed in Patent Document 2, the rigidity is relatively high, the first brush part having a relatively short length from the shaft center to the tip of the brush part, and the rigidity is A polishing brush including at least a second brush portion that is relatively low and has a relatively long length from the axial center to the tip of the brush portion was used. In the end surface polishing, the first brush portion and the second brush portion were brought into contact with the interposed surface and the side wall surface of the glass substrate, and the polishing brush was rotated to perform end surface polishing. In addition, about the Example, the comparative example 1, and the comparative example 2, the end surface grinding | polishing was performed so that it might become respectively the same time.
Then, whether or not there is a linear scratch on the side wall surface by microscopic observation of the side wall surface of the glass substrate subjected to end surface polishing for 10 batches of 100 batches obtained in Examples and Conventional Examples 1 and 2 I investigated. Further, the surface roughness (Ra, Rz) between the intervening surface and the side wall surface is obtained for each, and the difference in surface roughness (Rz) between the interposing surface and the side wall surface in one glass substrate and between 10 batches The surface quality variation was evaluated.

顕微鏡観察による結果、実施例の方法で得られたガラス基板は、いずれも側壁面に線状のキズがなかった。一方、従来例1の方法で得られたガラス基板の中には側壁面に線状のキズがあるものが見つかった。さらに、従来例2の方法で得られたガラス基板についても側壁面に線状のキズがあった。しかも、長いブラシ毛の摩耗は早かった。
また、実施例のガラス基板の場合には、介在面と側壁面との表面粗さ(Rz)の差を求めたところ、0.05μm以内であったが、従来例1、2については、0.05μmを超えたものが見つかった。
さらに、バッチ間のバラツキを調べたところ、従来例2は、介在面および側壁面の表面粗さのバラツキが大きかった。
これより、本実施形態の効果は明らかである。
As a result of microscopic observation, none of the glass substrates obtained by the method of the Examples had a linear scratch on the side wall surface. On the other hand, some glass substrates obtained by the method of Conventional Example 1 were found to have a linear scratch on the side wall surface. Further, the glass substrate obtained by the method of Conventional Example 2 also had a linear scratch on the side wall surface. Moreover, the wear of long brush hairs was fast.
In the case of the glass substrate of the example, the difference in surface roughness (Rz) between the intervening surface and the side wall surface was found to be within 0.05 μm. Found to exceed .05μm.
Furthermore, when the variation between batches was examined, in the conventional example 2, the variation in the surface roughness of the interposition surface and the side wall surface was large.
From this, the effect of this embodiment is clear.

以上、本発明の磁気ディスク用ガラス基板の製造方法について詳細に説明したが、本発明は上記実施形態及び実施例に限定されず、本発明の主旨を逸脱しない範囲において、種々の改良や変更をしてもよいのはもちろんである。   As mentioned above, although the manufacturing method of the glass substrate for magnetic discs of this invention was demonstrated in detail, this invention is not limited to the said embodiment and Example, In the range which does not deviate from the main point of this invention, various improvement and a change are carried out. Of course.

10 ガラス基板
10a 介在面
10b 側壁面
12 研磨ブラシ
12a 中心軸
12b ブラシ毛
14 介在部材
DESCRIPTION OF SYMBOLS 10 Glass substrate 10a Interposition surface 10b Side wall surface 12 Polishing brush 12a Central axis 12b Brush hair 14 Interposition member

Claims (4)

中心に円孔を有する円盤状のガラス基板の端面に、研磨ブラシを押し当てて研磨する端面研磨処理を含む磁気ディスク用ガラス基板の製造方法であって、
前記ガラス基板の端面は、前記ガラス基板の主表面に対して直交する側壁面と、前記主表面と前記側壁面との間に介在する介在面と、を有し、
前記端面研磨処理は、前記研磨ブラシと前記ガラス基板の端面との間に遊離砥粒を含む研磨液を供給して前記研磨ブラシと前記ガラス基板とを相対的に移動させることにより研磨を行う処理であり、
前記端面研磨処理は、前記研磨ブラシの毛先部分を介在面に当接させて前記介在面の研磨を少なくとも行う第1処理と、
前記第1処理後に、前記介在面の表面粗さを維持した状態で、前記側壁面の研磨を行う第2処理と、を含み、
前記第1処理及び前記第2処理で用いる前記研磨ブラシのブラシ毛の長さは同じである、ことを特徴とする磁気ディスク用ガラス基板の製造方法。
A method of manufacturing a glass substrate for a magnetic disk, including an end surface polishing process in which a polishing brush is pressed against an end surface of a disk-shaped glass substrate having a circular hole at the center,
The end surface of the glass substrate has a side wall surface orthogonal to the main surface of the glass substrate, and an intervening surface interposed between the main surface and the side wall surface,
In the end surface polishing process, a polishing liquid containing loose abrasive grains is supplied between the polishing brush and the end surface of the glass substrate, and polishing is performed by relatively moving the polishing brush and the glass substrate. And
The end surface polishing process includes a first process for polishing at least the interposition surface by bringing a hair tip portion of the polishing brush into contact with the interposition surface ;
After the first treatment, while maintaining the surface roughness of the intervening surface, seen including a second process for polishing the side wall,
The method of manufacturing a glass substrate for a magnetic disk, wherein the lengths of the bristles of the polishing brush used in the first process and the second process are the same .
前記第1処理は、前記介在面の表面粗さRzが0.15μm以下になるように研磨し、
前記第2処理は、前記介在面の表面粗さを維持しつつ、前記側壁面の表面粗さRzが0.15μm以下になるように研磨する、請求項1に記載の磁気ディスク用ガラス基板の製造方法。
The first treatment is performed so that the surface roughness Rz of the intervening surface is 0.15 μm or less,
2. The glass substrate for a magnetic disk according to claim 1, wherein the second treatment is performed such that the surface roughness Rz of the side wall surface is 0.15 μm or less while maintaining the surface roughness of the interposed surface. Production method.
前記第1処理及び前記第2処理では、研磨中、前記研磨ブラシを前記ガラス基板の厚さ方向に移動させる、請求項1または2に記載の磁気ディスク用ガラス基板の製造方法。 Wherein the first process and the second process, during polishing, moving the abrasive brush in the thickness direction of the glass substrate, according to claim 1 or 2 method for producing a glass substrate according to. 前記第2処理では、前記研磨ブラシの位置を、前記第1処理における前記研磨ブラシの位置に比べて、前記側壁面から遠ざけた位置に移動して研磨を行う、請求項1〜のいずれか1項に記載の磁気ディスク用ガラス基板の製造方法。 Wherein in the second process, the position of the polishing brush, compared to the position of the polishing brush in the first process, is polished by moving to a position away from the side wall, claim 1-3 2. A method for producing a glass substrate for a magnetic disk according to item 1.
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