JP6197580B2 - Double-side polishing machine for carrier plate and workpiece - Google Patents

Double-side polishing machine for carrier plate and workpiece Download PDF

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JP6197580B2
JP6197580B2 JP2013224414A JP2013224414A JP6197580B2 JP 6197580 B2 JP6197580 B2 JP 6197580B2 JP 2013224414 A JP2013224414 A JP 2013224414A JP 2013224414 A JP2013224414 A JP 2013224414A JP 6197580 B2 JP6197580 B2 JP 6197580B2
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carrier plate
polishing
plate
groove
double
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JP2015085418A (en
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三浦　友紀
友紀 三浦
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Sumco Corp
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Sumco Corp
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Priority to JP2013224414A priority Critical patent/JP6197580B2/en
Priority to PCT/JP2014/002975 priority patent/WO2015063969A1/en
Priority to DE112014004942.5T priority patent/DE112014004942T5/en
Priority to CN201480059761.2A priority patent/CN105916631B/en
Priority to KR1020167010779A priority patent/KR101768553B1/en
Priority to TW103129305A priority patent/TWI566289B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

本発明は、ワークの両面研磨装置に用いる、ワークを保持するためのキャリアプレート、及び、該キャリアプレートを備えたワークの両面研磨装置に関するものである。   The present invention relates to a carrier plate for holding a work, and a work double-side polishing apparatus provided with the carrier plate, which is used in a work double-side polishing apparatus.

研磨に供するワークの典型例であるシリコンウェーハなどの半導体ウェーハの製造において、より高精度なウェーハの平坦度品質や表面粗さ品質を得るために、ウェーハの表裏面を同時に研磨する両面研磨工程が採用されている。   In the manufacture of semiconductor wafers such as silicon wafers, which are typical examples of workpieces used for polishing, there is a double-side polishing process that simultaneously polishes the front and back surfaces of the wafer in order to obtain higher-precision wafer flatness quality and surface roughness quality. It has been adopted.

この両面研磨は、一般的に、ワークを保持する孔が設けられたキャリアプレートを上下定盤の間に有する両面研磨装置を用い、このキャリアプレートの保持孔にワークを保持し、研磨スラリーを供給しながら上下定盤を回転させることにより、上下定盤に貼布した研磨パッドとワークの表裏面とを摺動させて、ワークの両面を同時に研磨するものである。   This double-side polishing generally uses a double-side polishing machine that has a carrier plate with a hole for holding the workpiece between the upper and lower surface plates, holds the workpiece in the holding hole of this carrier plate, and supplies polishing slurry. While rotating the upper and lower surface plates, the polishing pad affixed to the upper and lower surface plates and the front and back surfaces of the workpiece are slid to simultaneously polish both surfaces of the workpiece.

そのような両面研磨装置として、図５、図６に示すように、上面から下面までを貫通する穿孔１８を設けたキャリアプレートを用いるものや、例えば、特許文献１、２に記載のように、キャリアプレートの表面に、保持孔からキャリアプレートの外周まで延びる溝を設けたものが提案されている。このように、穿孔１８や、保持孔からキャリアプレートの外周まで延びる主溝を設けることにより、ワークへの研磨スラリーの供給量を制御することができる。   As such a double-side polishing apparatus, as shown in FIGS. 5 and 6, using a carrier plate provided with perforations 18 penetrating from the upper surface to the lower surface, for example, as described in Patent Documents 1 and 2, Proposals have been made in which a groove extending from the holding hole to the outer periphery of the carrier plate is provided on the surface of the carrier plate. Thus, the supply amount of the polishing slurry to the workpiece can be controlled by providing the perforations 18 and the main grooves extending from the holding holes to the outer periphery of the carrier plate.

特開２００８−０２３６１７号公報JP 2008-023617 A 特開平０５−００４１６５号公報JP 05-004165 A

しかしながら、上記の技術のように、キャリアプレートに穿孔１８を設けると、この穿孔１８を通って研磨スラリーが下定盤側へ排出されやすくなってしまう。また、特許文献１、２に記載のように、保持孔からキャリアプレートの外周まで延びる溝を設けると、供給された研磨スラリーが溝を介してキャリアプレート外へ排出されやすくなってしまう。従って、これらの技術では、キャリアプレートの上面での研磨スラリーの供給量が十分でなくなってしまう場合があった。   However, when the carrier plate is provided with the perforations 18 as in the above technique, the polishing slurry is easily discharged to the lower surface plate side through the perforations 18. Further, as described in Patent Documents 1 and 2, when a groove extending from the holding hole to the outer periphery of the carrier plate is provided, the supplied polishing slurry is easily discharged out of the carrier plate through the groove. Therefore, in these techniques, the supply amount of the polishing slurry on the upper surface of the carrier plate may not be sufficient.

キャリアプレートの上面での研磨スラリーの供給量が十分でないと、上定盤に貼布した研磨パッドと該研磨パッドに接触するワーク上面との間の摩擦が増大し、摩擦熱により本来のメカノケミカルの作用のバランスが崩れ、研磨スラリーが高温化してケミカル作用が優勢な加工となってしまう場合がある。そして、そのような場合、ワーク外周のダレが生じるおそれがあり、特に、ワーク中心への研磨スラリーの供給量が不足すると、研磨後のワークが凸形状となってしまい、所望のワークの形状を得ることができなくなるという問題があった。
さらに、研磨スラリーの供給量が十分でないと、研磨生成物の排出ができずに、該研磨生成物が研磨パッド上に堆積し、研磨パッド表面付近のポア（研磨スラリーを保持するための微小空孔）が目詰まりを起こし、ワーク全面の研磨レートが低下してしまう場合があるという問題もあった。
このように、上定盤への研磨スラリーの供給量が十分でないと、ワークの上下面で研磨量や表面粗さ等の品質が相違するおそれがあった。 If the supply amount of the polishing slurry on the upper surface of the carrier plate is not sufficient, the friction between the polishing pad affixed to the upper surface plate and the upper surface of the work contacting the polishing pad increases, and the original mechanochemical is caused by frictional heat. The balance of the action may be lost, the polishing slurry may be heated to a high temperature, and the chemical action may be dominant. In such a case, sagging of the outer periphery of the workpiece may occur. In particular, when the supply amount of the polishing slurry to the center of the workpiece is insufficient, the workpiece after polishing becomes a convex shape, and the desired workpiece shape is obtained. There was a problem that it could not be obtained.
Furthermore, if the supply amount of the polishing slurry is not sufficient, the polishing product cannot be discharged, and the polishing product accumulates on the polishing pad, and the pores near the surface of the polishing pad (the minute void for holding the polishing slurry). There is also a problem that the polishing rate of the entire surface of the workpiece may be reduced due to clogging of the holes).
As described above, if the supply amount of the polishing slurry to the upper surface plate is not sufficient, the quality such as the polishing amount and the surface roughness may be different between the upper and lower surfaces of the workpiece.

本発明は、このような問題点に鑑みてなされたものであり、ワークの上面に研磨スラリーを十分に供給することのできる、ワークの両面研磨装置に用いる、ワークを保持するためのキャリアプレート、及び、該キャリアプレートを備えた両面研磨装置を提供することを目的とする。   The present invention has been made in view of such problems, a carrier plate for holding a workpiece, used in a double-side polishing apparatus for a workpiece, which can sufficiently supply a polishing slurry to the upper surface of the workpiece, And it aims at providing the double-side polish apparatus provided with this carrier plate.

本発明者は、上記の課題を解決すべく鋭意検討を重ねた。その結果、本発明者は、ワークの上面に研磨スラリーを十分に供給するためには、保持孔からキャリアプレートの外周まで延びる溝を設けて、キャリアプレートの周囲の研磨スラリーを保持孔へ導入することよりも、キャリアプレートの上面での研磨スラリーの滞留時間を長くすることがより有効であることを新たに見出した。
そして、本発明者は、キャリアプレートの上面に、保持孔により区画されるキャリアプレートの縁部間を延びる溝を設けることで、所期した目的を有利に達成することができるという新規知見を得て本発明を完成するに至った。 The present inventor has intensively studied to solve the above problems. As a result, in order to sufficiently supply the polishing slurry to the upper surface of the workpiece, the inventor provides a groove extending from the holding hole to the outer periphery of the carrier plate, and introduces the polishing slurry around the carrier plate into the holding hole. It was newly found that it is more effective to increase the residence time of the polishing slurry on the upper surface of the carrier plate.
The present inventor obtained new knowledge that the intended purpose can be advantageously achieved by providing a groove extending between the edges of the carrier plate defined by the holding hole on the upper surface of the carrier plate. The present invention has been completed.

本発明は、上記の知見に基づいてなされたものであり、その要旨構成は、以下の通りである。
本発明のワークの両面研磨装置用のキャリアプレートは、ワークを保持する１つの保持孔を有し、前記キャリアプレートの少なくとも上面に、前記保持孔により区画される前記キャリアプレートの縁部間を延びる、複数本の主溝を設けたことを特徴とする。
この構成によれば、研磨スラリーの、キャリアプレートの上面での滞留時間を長くして、両面研磨においてワークの上面の研磨量を十分なものとすることができる。
なお、本明細書において、「ワークの上面」とは、両面研磨において、ワークの両面研磨装置の上定盤側に貼布した研磨パッドと摺動する側の面をいうものとし、他方の面をワークの下面というものとする。 This invention is made | formed based on said knowledge, The summary structure is as follows.
A carrier plate for a double-side polishing apparatus for a workpiece according to the present invention has one holding hole for holding a workpiece, and extends at least on the upper surface of the carrier plate between edges of the carrier plate defined by the holding hole. A plurality of main grooves are provided.
According to this configuration, the residence time of the polishing slurry on the upper surface of the carrier plate can be lengthened, and the polishing amount of the upper surface of the workpiece can be made sufficient in double-side polishing.
In the present specification, the “upper surface of the workpiece” means a surface on the side that slides with the polishing pad affixed to the upper surface plate side of the double-side polishing apparatus of the workpiece in double-side polishing, and the other surface. Is the lower surface of the workpiece.

また、本発明のワークの両面研磨装置用のキャリアプレートにおいては、前記複数本の主溝を、同心円状に設けてなることが好ましい。
この構成によれば、キャリアプレートの上面全面にわたって主溝を配置することができ、また、１本の主溝の延在長さを長くすることができるため、キャリアプレートの上面に研磨スラリーを、より長時間滞留させることができる。 In the carrier plate for the double-side polishing apparatus for workpieces according to the present invention, the plurality of main grooves are preferably provided concentrically.
According to this configuration, the main groove can be disposed over the entire upper surface of the carrier plate, and the extension length of one main groove can be increased. It can be retained for a longer time.

ここで、本発明のワークの両面研磨装置用のキャリアプレートは、前記主溝間、前記主溝と前記キャリアプレートの外周との間、及び前記主溝と前記縁部との間のうち、少なくとも１箇所を接続する副溝を設け、
前記副溝は、前記キャリアプレートの径方向において、前記縁部から前記キャリアプレートの外周までの間に途切れた部分を有するように設けてなることが好ましい。
この構成によれば、副溝により、キャリアプレートの上面における研磨スラリーの滞留時間を調整することができる。 Here, the carrier plate for the double-side polishing apparatus for workpieces of the present invention includes at least one of the main grooves, the main grooves and the outer periphery of the carrier plate, and the main grooves and the edges. Provide a sub-groove to connect one place,
It is preferable that the sub-groove is provided so as to have a discontinuous portion between the edge portion and the outer periphery of the carrier plate in the radial direction of the carrier plate.
According to this configuration, the residence time of the polishing slurry on the upper surface of the carrier plate can be adjusted by the sub-groove.

ここで、本発明のワークの両面研磨装置は、上定盤及び下定盤を有する回転定盤と、前記回転定盤の中心部に設けられたサンギアと、前記回転定盤の外周部に設けられたインターナルギアと、前記上定盤と前記下定盤との間に設けられた、上記のキャリアプレートと、を備えたことを特徴とする。
この構成によれば、研磨スラリーの、キャリアプレートの上面での滞留時間を長くして、両面研磨においてワークの上面の研磨量を十分なものとすることができる。 Here, the double-side polishing apparatus for a workpiece according to the present invention is provided on a rotating surface plate having an upper surface plate and a lower surface plate, a sun gear provided at the center of the rotating surface plate, and an outer peripheral portion of the rotating surface plate. And an internal gear and the carrier plate provided between the upper surface plate and the lower surface plate.
According to this configuration, the residence time of the polishing slurry on the upper surface of the carrier plate can be lengthened, and the polishing amount of the upper surface of the workpiece can be made sufficient in double-side polishing.

本発明によれば、ワークの上面に研磨スラリーを十分に供給することのできる、ワークの両面研磨装置に用いる、ワークを保持するためのキャリアプレート、及び、該キャリアプレートを備えた両面研磨装置を提供することができる。   According to the present invention, there is provided a carrier plate for holding a work and a double-side polishing apparatus provided with the carrier plate, which is used in a work double-side polishing apparatus capable of sufficiently supplying a polishing slurry to the upper surface of the work. Can be provided.

（ａ）本発明の一実施形態にかかるワークの両面研磨装置を示す鉛直方向断面図である。（ｂ）（ａ）に示すワークの両面研磨装置を、上定盤を外した状態で真上から眺めた平面図である。(A) It is a vertical direction sectional view which shows the double-side polish apparatus of the workpiece | work concerning one Embodiment of this invention. (B) It is the top view which looked at the double-side polish apparatus of the workpiece | work shown to (a) from right above in the state which removed the upper surface plate. 図１（ａ）（ｂ）に示すキャリアプレートの１つを、上定盤を外した状態で真上から眺めた平面図である。It is the top view which looked at one of the carrier plates shown to Fig.1 (a) (b) from right above in the state which removed the upper surface plate. 他の実施形態にかかるキャリアプレートの平面図である。It is a top view of the carrier plate concerning other embodiments. 本発明の一実施形態にかかる両面研磨装置の鉛直方向の概略部分断面図である。It is a general | schematic fragmentary sectional view of the perpendicular direction of the double-side polish apparatus concerning one Embodiment of this invention. 比較例にかかるキャリアプレートの平面図である。It is a top view of the carrier plate concerning a comparative example. 比較例にかかる両面研磨装置の鉛直方向の概略部分断面図である。It is a general | schematic fragmentary sectional view of the perpendicular direction of the double-side polish apparatus concerning a comparative example. （ａ）比較例にかかる研磨後のウェーハ形状を示す断面図である。（ｂ）発明例にかかる研磨後のウェーハ形状を示す断面図である。(A) It is sectional drawing which shows the wafer shape after grinding | polishing concerning a comparative example. (B) It is sectional drawing which shows the wafer shape after grinding | polishing concerning the invention example.

以下、本発明の実施形態について、図面を参照して詳細に例示説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図１（ａ）は、本発明の一実施形態にかかるワークの両面研磨装置を示す鉛直方向断面図であり、図１（ｂ）は、該両面研磨装置を、上定盤を外した状態で真上から眺めた平面図である。
図１（ａ）（ｂ）に示すように、この両面研磨装置１は、上定盤２及びそれに対向する下定盤３を有する回転定盤４と、回転定盤４の中心部に設けられたサンギア５と、回転定盤４の外周部に円環状に設けられたインターナルギア６とを備えている。図１（ａ）に示すように、上下の回転定盤４の対向面、すなわち、上定盤２の研磨面である下面側及び下定盤３の研磨面である上面側には、それぞれ研磨パッド７が貼布されている。 FIG. 1A is a vertical sectional view showing a double-side polishing apparatus for a workpiece according to an embodiment of the present invention, and FIG. 1B shows the double-side polishing apparatus with the upper surface plate removed. It is the top view seen from right above.
As shown in FIGS. 1 (a) and 1 (b), the double-side polishing apparatus 1 is provided at a central portion of a rotating surface plate 4 having an upper surface plate 2 and a lower surface plate 3 opposite to the upper surface plate 2, and the rotating surface plate 4. A sun gear 5 and an internal gear 6 provided in an annular shape on the outer periphery of the rotating surface plate 4 are provided. As shown in FIG. 1 (a), the opposing surfaces of the upper and lower rotating surface plates 4, that is, the lower surface side that is the polishing surface of the upper surface plate 2 and the upper surface side that is the polishing surface of the lower surface plate 3 are respectively 7 is affixed.

また、図１（ａ）（ｂ）に示すように、この装置１は、上定盤２と下定盤３との間に設けられ、ワークＷを保持する１つの保持孔８を有する図示例で５つのキャリアプレート９を備えている。なお、図示例では、この装置１は、キャリアプレート９を５つ有しているが、キャリアプレート９は１つ以上あればよく、キャリアプレート９の個数は特に限定されない。また、図示例では、孔８にワーク（本実施形態ではウェーハ）Ｗが保持されている。
ここで、キャリアプレート９の材質は、例えば、ステンレスやその他の金属、ガラスエポキシなどの樹脂複合材、あるいは、これらをコーティングしたものとすることができる。 Further, as shown in FIGS. 1A and 1B, the apparatus 1 is provided between the upper surface plate 2 and the lower surface plate 3, and has a single holding hole 8 that holds the workpiece W. Five carrier plates 9 are provided. In the illustrated example, the apparatus 1 includes five carrier plates 9, but one or more carrier plates 9 may be provided, and the number of carrier plates 9 is not particularly limited. In the illustrated example, a workpiece (wafer in this embodiment) W is held in the hole 8.
Here, the material of the carrier plate 9 can be, for example, stainless steel, other metals, a resin composite material such as glass epoxy, or a coating of these.

図２は、図１（ａ）（ｂ）に示すキャリアプレート９の１つを、上定盤を外した状態で真上から眺めた平面図である。
図２に示すように、本実施形態において、キャリアプレート９の少なくとも上面に、同心円状に配置された、図示例で１０本の主溝１０が設けられている。これらの主溝１０及び保持孔８によりキャリアプレート９は、図示例で１１個の陸部１１に区画されている。
図２に示すように、主溝１０は、保持孔８により区画されるキャリアプレート９の縁部１２間を延びている。すなわち、各主溝１０の始端および終端のそれぞれは、キャリアプレート９の縁部１２に繋がっている。換言すれば、各主溝１０は、キャリアプレート９の外周１３までは延びておらず、キャリアプレート９内で終端している。
なお、図示例では、各主溝１０の始端及び終端は、キャリアプレート９の縁部１２の異なる位置に繋がっているが、各主溝１０の始端と終端とがキャリアプレート９の縁部１２の同一の位置に繋がるように構成することもできる。 FIG. 2 is a plan view of one of the carrier plates 9 shown in FIGS. 1A and 1B as viewed from directly above with the upper surface plate removed.
As shown in FIG. 2, in the present embodiment, ten main grooves 10 are provided on at least the upper surface of the carrier plate 9 in a concentric manner in the illustrated example. The carrier plate 9 is partitioned into 11 land portions 11 by the main grooves 10 and the holding holes 8 in the illustrated example.
As shown in FIG. 2, the main groove 10 extends between the edge portions 12 of the carrier plate 9 defined by the holding holes 8. That is, the start end and the end of each main groove 10 are connected to the edge 12 of the carrier plate 9. In other words, each main groove 10 does not extend to the outer periphery 13 of the carrier plate 9 but terminates in the carrier plate 9.
In the illustrated example, the start and end of each main groove 10 are connected to different positions on the edge 12 of the carrier plate 9, but the start and end of each main groove 10 are connected to the edge 12 of the carrier plate 9. It can also comprise so that it may connect to the same position.

また、本発明においては、ウェーハＷの周縁部をキャリアプレートと接触することによるダメージから保護するために、樹脂等からなるインサータを縁部１２に沿って取り付けてもよい。この場合、主溝１０は、キャリアプレート９の縁部１２間を延びるものとし、インサータの上面には主溝１０が形成されないようにする。   In the present invention, an inserter made of resin or the like may be attached along the edge portion 12 in order to protect the peripheral edge portion of the wafer W from damage due to contact with the carrier plate. In this case, the main groove 10 extends between the edge portions 12 of the carrier plate 9 so that the main groove 10 is not formed on the upper surface of the inserter.

図３は、他の実施形態にかかるキャリアプレート９の平面図である。図３に示すキャリアプレート９は、主溝１０の配置については、図２に示すキャリアプレート９と同様であるが、以下に説明するように、副溝１４が形成されている点で、図２に示すキャリアプレート９と異なっている。
すなわち、図３に示すように、この実施形態のキャリアプレート９の上面には、主溝１０間、主溝１０とキャリアプレート９の外周１３との間、及び主溝１０と縁部１２との間を接続する副溝１４が複数本設けられている。
これらの副溝１４は、キャリアプレート９の径方向において、縁部１２からキャリアプレート９の外周１３までの間に途切れた部分を有するように設けられている。すなわち、副溝１４は、キャリアプレート９の径方向に、縁部１２からキャリアプレート９の外周１３まで連続した直線状に配置されてはおらず、この例では、キャリアプレート９の径方向に隣接する陸部１１間に設けられた副溝１４は、キャリアプレート９の周方向に互いにオフセットするように設けられている。図示例では、隣接する陸部１１間を１つ置きに断続的に延びる５つの断続副溝群１５を形成するようにして、複数の副溝１４が設けられている。
以下、本発明の作用効果について説明する。 FIG. 3 is a plan view of a carrier plate 9 according to another embodiment. The carrier plate 9 shown in FIG. 3 is the same as the carrier plate 9 shown in FIG. 2 with respect to the arrangement of the main grooves 10, except that the sub-grooves 14 are formed as described below. It differs from the carrier plate 9 shown in FIG.
That is, as shown in FIG. 3, on the upper surface of the carrier plate 9 of this embodiment, between the main grooves 10, between the main grooves 10 and the outer periphery 13 of the carrier plate 9, and between the main grooves 10 and the edges 12. A plurality of sub-grooves 14 are provided to connect each other.
These sub-grooves 14 are provided so as to have a discontinuous portion between the edge 12 and the outer periphery 13 of the carrier plate 9 in the radial direction of the carrier plate 9. That is, the sub-groove 14 is not arranged in a straight line from the edge 12 to the outer periphery 13 of the carrier plate 9 in the radial direction of the carrier plate 9, and in this example, is adjacent to the radial direction of the carrier plate 9. The auxiliary grooves 14 provided between the land portions 11 are provided so as to be offset from each other in the circumferential direction of the carrier plate 9. In the illustrated example, a plurality of sub-grooves 14 are provided so as to form five intermittent sub-groove groups 15 that intermittently extend between adjacent land portions 11.
Hereinafter, the function and effect of the present invention will be described.

図４は、本発明の一実施形態にかかる両面研磨装置１の鉛直方向の概略部分断面図である。
図４に示すように、自然滴下された研磨スラリー１６は、上定盤２に設けられたスラリーノズル１７を介してウェーハＷ及びキャリアプレート９の上面に供給される。キャリアプレート９の上面に供給された研磨スラリー１６は、一部がキャリアプレート９の上面や上面に設けた主溝１０内を流れ、残りの部分は、重力によってキャリアプレート９間等からキャリアプレート９の下面側へと供給される。
本発明によれば、キャリアプレート９の上面に設けた主溝１０がキャリアプレートの外周１３まで延びていない構成としているため、キャリアプレート９の上面に設けられた主溝１０を流れる研磨スラリー１７は、キャリアプレート９の外へは排出されづらく、従って該主溝１０内に長時間滞留することができ、主溝１０は、研磨スラリー１７の貯留溝として機能する。
さらに、主溝１０は、その始端及び終端の双方がキャリアプレート９の縁部１２に繋がっているため、該縁部１２を区画する保持孔８により保持されるウェーハＷの上面へ十分に研磨スラリー１６を供給することができる。
従って、本発明によれば、研磨スラリー１６の、キャリアプレート９の上面での滞留時間を長くして、ウェーハＷの上面に十分に研磨スラリー１６を供給することができるため、両面研磨においてウェーハＷの上面の研磨量を十分なものとすることができる。よって、本発明によれば、両面研磨後のウェーハＷの上下面の研磨量や表面粗さの差異を低減して、同等の品質とすることができる。また、ウェーハＷの上面に長時間滞留している研磨スラリー１６により研磨生成物を排出しやすくなる。 FIG. 4 is a schematic partial sectional view in the vertical direction of the double-side polishing apparatus 1 according to one embodiment of the present invention.
As shown in FIG. 4, the naturally dropped polishing slurry 16 is supplied to the upper surface of the wafer W and the carrier plate 9 through a slurry nozzle 17 provided on the upper surface plate 2. A part of the polishing slurry 16 supplied to the upper surface of the carrier plate 9 flows in the main groove 10 provided on the upper surface or the upper surface of the carrier plate 9, and the remaining part of the carrier slurry 9 from between the carrier plates 9 or the like by gravity. Is supplied to the lower surface side.
According to the present invention, since the main groove 10 provided on the upper surface of the carrier plate 9 does not extend to the outer periphery 13 of the carrier plate 9, the polishing slurry 17 flowing through the main groove 10 provided on the upper surface of the carrier plate 9 is Therefore, it is difficult to be discharged out of the carrier plate 9, so that it can stay in the main groove 10 for a long time, and the main groove 10 functions as a storage groove for the polishing slurry 17.
Further, since both the start end and the end of the main groove 10 are connected to the edge portion 12 of the carrier plate 9, the polishing groove is sufficiently applied to the upper surface of the wafer W held by the holding holes 8 that define the edge portion 12. 16 can be supplied.
Therefore, according to the present invention, the residence time of the polishing slurry 16 on the upper surface of the carrier plate 9 can be increased and the polishing slurry 16 can be sufficiently supplied to the upper surface of the wafer W. The polishing amount of the upper surface of the substrate can be made sufficient. Therefore, according to the present invention, the difference in polishing amount and surface roughness between the upper and lower surfaces of the wafer W after double-side polishing can be reduced and the quality can be made equivalent. Further, the polishing product 16 staying on the upper surface of the wafer W for a long time makes it easy to discharge the polishing product.

ここで、本発明においては、図２、図３に示したように、キャリアプレート９の少なくとも上面に主溝１０を複数本設けることが好ましい。
キャリアプレート９の上面での滞留時間を長くさせることのできる研磨スラリー１６の量を確保することができるからである。また、研磨パッド７全体への研磨スラリー１６の分散性を良くすることができるからである。 Here, in the present invention, as shown in FIGS. 2 and 3, it is preferable to provide a plurality of main grooves 10 on at least the upper surface of the carrier plate 9.
This is because the amount of polishing slurry 16 that can increase the residence time on the upper surface of the carrier plate 9 can be secured. Further, the dispersibility of the polishing slurry 16 over the entire polishing pad 7 can be improved.

また、本発明においては、図２、図３に示したように、キャリアプレート９の少なくとも上面に、複数の主溝１０を、同心円状に設けることが好ましい。
キャリアプレート９の上面全面にわたって主溝１０を配置することができ、また、１つの主溝１０の始端から終端までの距離（延在長さ）を確保することができるため、研磨スラリー１６をキャリアプレート９の上面に、より長時間滞留させるのに適しているからである。
なお、図２、図３に示す例では、各主溝１０は円形（の一部）であり、各主溝１０の中心も一致しているが、縁部１２間を延びる１つの主溝１０に対してキャリアプレート９の外周側に縁部１２間を延びる別の主溝１０を配置し、主溝１０の本数に合わせてそれを繰り返したような配置としても、上記とほぼ同様の効果が得られるため、主溝１０は、必ずしも円形である必要ななく、また、中心が一致していなくても良い。 In the present invention, as shown in FIGS. 2 and 3, it is preferable that a plurality of main grooves 10 are provided concentrically on at least the upper surface of the carrier plate 9.
Since the main groove 10 can be disposed over the entire upper surface of the carrier plate 9 and a distance (extended length) from the start end to the end of one main groove 10 can be secured, the polishing slurry 16 is used as the carrier. This is because it is suitable for staying on the upper surface of the plate 9 for a longer time.
In the example shown in FIGS. 2 and 3, each main groove 10 is circular (a part thereof), and the center of each main groove 10 is also coincident, but one main groove 10 extending between the edge portions 12. On the other hand, if another main groove 10 extending between the edge portions 12 is arranged on the outer peripheral side of the carrier plate 9 and the arrangement is repeated according to the number of the main grooves 10, the same effect as described above can be obtained. Therefore, the main groove 10 does not necessarily need to be circular, and the centers do not have to coincide with each other.

また、図２、図３に示す例では、主溝１０は、同心円状に配置され、湾曲して延びる形状であるが、主溝１０は、全体又は一部が直線状であってもよく、互いに交差させるように配置してもよい。   Moreover, in the example shown in FIG. 2, FIG. 3, the main groove 10 is concentrically arranged and has a shape extending in a curved shape, but the main groove 10 may be entirely or partially linear. You may arrange | position so that it may mutually cross.

また、本発明においては、主溝１０の配置、本数、溝幅、溝深さ等は、特には限定されず、所望とする研磨スラリー１６の滞留時間に応じて決定すればよい。
なお、本発明においては、主溝１０の溝幅が狭すぎると、滞留させる研磨スラリー１６の量が低下してしまい、主溝１０の溝幅が広すぎると、研磨パッド７の沈み込みにより研磨パッド７と主溝１０底部が接触して溝内に滞留する堆積スラリーなどをキャリアプレート９上面上に飛散させてしまうおそれがあるため、主溝１０の溝幅は０．５〜１０ｍｍの範囲で配置することが好ましい。また、主溝１０の溝深さが深すぎると、キャリアプレート９そのものの剛性が保てなくなるおそれがあり、一方、主溝１０の溝深さが浅すぎると、キャリアプレート９表面の磨耗により溝が消失してしまうおそれがあるため、主溝１０の溝深さは、キャリアプレート９の厚さの１０〜５０％とすることが好ましい。 In the present invention, the arrangement, number, groove width, groove depth, etc. of the main grooves 10 are not particularly limited, and may be determined according to the desired residence time of the polishing slurry 16.
In the present invention, if the groove width of the main groove 10 is too narrow, the amount of the polishing slurry 16 to be retained decreases, and if the groove width of the main groove 10 is too wide, the polishing pad 7 sinks. Since the pad 7 and the bottom of the main groove 10 are in contact with each other and there is a risk that accumulated slurry or the like staying in the groove will be scattered on the upper surface of the carrier plate 9, the groove width of the main groove 10 is in the range of 0.5 to 10 mm. It is preferable to arrange. On the other hand, if the groove depth of the main groove 10 is too deep, the rigidity of the carrier plate 9 itself may not be maintained. On the other hand, if the groove depth of the main groove 10 is too shallow, the surface of the carrier plate 9 may be worn due to wear. Therefore, the groove depth of the main groove 10 is preferably 10 to 50% of the thickness of the carrier plate 9.

さらに、本発明においては、主溝１０間、主溝１０とキャリアプレート９の外周１３との間、及び主溝１０と縁部１２との間のうち、少なくとも１箇所を接続する副溝１４を設け、副溝１４は、キャリアプレートの径方向９において、縁部１２からキャリアプレート９の外周１３までの間に途切れた部分を有するように設けることが好ましい。
上記のような副溝１４を設けることにより、副溝１４は、研磨スラリー１６の排出用溝として機能し、主溝１０の始端から終端までの迂回ルートを形成して、キャリアプレート９の上面における研磨スラリー１６の滞留時間を調整することができるからである。また、副溝１４がキャリアプレートの径方向において、キャリアプレート９の縁部１２から外周１３まで途切れた部分を有さずに連続的に延びてしまうと、研磨スラリー１６が副溝１４を介して、キャリアプレート９の外部まで排出されやすくなってしまうからである。 Further, in the present invention, the sub-groove 14 that connects at least one of the main grooves 10, the main grooves 10 and the outer periphery 13 of the carrier plate 9, and the main grooves 10 and the edge portions 12 is provided. The provided and auxiliary groove 14 is preferably provided so as to have a discontinuous portion between the edge 12 and the outer periphery 13 of the carrier plate 9 in the radial direction 9 of the carrier plate.
By providing the sub-groove 14 as described above, the sub-groove 14 functions as a groove for discharging the polishing slurry 16, forms a detour route from the start end to the end of the main groove 10, and on the upper surface of the carrier plate 9. This is because the residence time of the polishing slurry 16 can be adjusted. Further, if the sub-groove 14 continuously extends in the radial direction of the carrier plate without having a discontinuous portion from the edge 12 to the outer periphery 13 of the carrier plate 9, the polishing slurry 16 passes through the sub-groove 14. This is because it is easy to be discharged to the outside of the carrier plate 9.

なお、図３に示す例では、副溝１４は、キャリアプレート９の径方向に延在しているが、本発明は、この場合には限定されず、副溝１４は、いずれの方向に延在していてもよい。また、副溝１４は、湾曲した形状とすることもできる。   In the example shown in FIG. 3, the secondary groove 14 extends in the radial direction of the carrier plate 9, but the present invention is not limited to this case, and the secondary groove 14 extends in any direction. May be present. Further, the sub-groove 14 can also have a curved shape.

また、本発明においては、副溝１４の配置、本数、溝幅、溝深さ等は、特には限定されず、所望とする研磨スラリー１６の滞留時間に応じて決定すればよく、副溝１４の溝幅および溝深さは、主溝１０と同様に、溝幅は０．５〜１０ｍｍの範囲とし、溝深さは、キャリアプレート９の厚さの１０〜５０％とすることが好ましい。   In the present invention, the arrangement, number, groove width, groove depth and the like of the sub-grooves 14 are not particularly limited, and may be determined according to the desired residence time of the polishing slurry 16. As with the main groove 10, the groove width and the groove depth are preferably in the range of 0.5 to 10 mm, and the groove depth is preferably 10 to 50% of the thickness of the carrier plate 9.

以上、本発明の実施形態について説明したが、本発明は、上記の実施形態に何ら限定されるものでない。例えば、上記の実施形態では、主溝１０や副溝１４をキャリアプレート９の上面にのみ設けているが、キャリアプレート９の下面９にも主溝１０や副溝１４を設けても良い。さらに、本発明にあっては、主溝１０や副溝１４の他、滞留時間を調整するために、キャリアプレート９の上面から下面までを貫通する穿孔１８を併設することもできる。
以下、本発明の実施例について説明するが、本発明はこの実施例には何ら限定されない。 As mentioned above, although embodiment of this invention was described, this invention is not limited to said embodiment at all. For example, in the above embodiment, the main groove 10 and the sub-groove 14 are provided only on the upper surface of the carrier plate 9, but the main groove 10 and the sub-groove 14 may be provided also on the lower surface 9 of the carrier plate 9. Furthermore, in the present invention, in addition to the main groove 10 and the sub-groove 14, a hole 18 penetrating from the upper surface to the lower surface of the carrier plate 9 can be provided in order to adjust the residence time.
Examples of the present invention will be described below, but the present invention is not limited to these examples.

＜実施例＞
以下の発明例及び比較例にかかるキャリアプレートを用いてウェーハの両面研磨を行い、両面研磨後のウェーハの形状、厚さ及び表裏面の粗さを計測し、比較する試験を行った。
まず、発明例として、図３に示すキャリアプレートを有し、キャリアプレート以外は図１に示すのと同様の構成を有する両面研磨装置を用いた。なお、キャリアプレートの上面に設けた主溝及び副溝については、主溝及び副溝の溝幅は２ｍｍ、溝深さは２００μｍとし、主溝間のピッチ間隔は１０ｍｍとした。
また、比較例として、図５、図６に示すような、上面から下面までを貫通する穿孔１８を６つ設けたキャリアプレートを有し、キャリアプレート以外は図１に示すのと同様の構成を有する両面研磨装置を用いた。 <Example>
A wafer was subjected to double-side polishing using the carrier plates according to the following invention examples and comparative examples, and the shape and thickness of the wafer after double-side polishing and the roughness of the front and back surfaces were measured and compared.
First, as an example of the invention, a double-side polishing apparatus having the carrier plate shown in FIG. 3 and having the same configuration as shown in FIG. 1 except for the carrier plate was used. In addition, about the main groove and subgroove provided in the upper surface of the carrier plate, the groove width of the main groove and the subgroove was 2 mm, the groove depth was 200 μm, and the pitch interval between the main grooves was 10 mm.
In addition, as a comparative example, as shown in FIGS. 5 and 6, it has a carrier plate provided with six perforations 18 penetrating from the upper surface to the lower surface, and the configuration other than the carrier plate is the same as that shown in FIG. A double-side polishing apparatus having the same was used.

ここで、研磨に供するウェーハとしては、径３００ｍｍのシリコンウェーハを用いた。また、キャリアプレートはステンレス製のものを用い、研磨パッドは、ウレタンパッドを用い、研磨スラリーとしては、アルカリベース溶液にコロイダルシリカを添加したものを用いた。
研磨は、両面の合計の研磨量が２０μｍとなるまで行った。
研磨後のシリコンウェーハについて、形状及び厚さは、黒田精工社製ナノメトロを用いて計測し、表面粗さ（Ｒｍｓ）については、レイテックス社製チャップマンを用いて計測した。
以下、評価結果について説明する。 Here, a silicon wafer having a diameter of 300 mm was used as a wafer to be polished. The carrier plate was made of stainless steel, the polishing pad was a urethane pad, and the polishing slurry was an alkali base solution added with colloidal silica.
Polishing was performed until the total polishing amount on both sides reached 20 μm.
The shape and thickness of the polished silicon wafer were measured using a nano metro manufactured by Kuroda Seiko Co., Ltd., and the surface roughness (Rms) was measured using a Chapman manufactured by Raytex.
Hereinafter, the evaluation results will be described.

＜ウェーハ形状＞
図７（ａ）は、比較例にかかる研磨後のウェーハ形状を示す断面図であり、図７（ｂ）は、発明例にかかる研磨後のウェーハ形状を示す断面図である。図７（ａ）（ｂ）において、縦軸は、ウェーハの厚さ方向を示している。また、図７（ａ）（ｂ）において、横軸は、ウェーハ中心を０としたときのウェーハ中心からの距離を、ウェーハの半径をＲとして示している。
図７（ａ）（ｂ）に示すように、比較例にかかる研磨後のウェーハは、中央部の研磨量が不足しており、全体的に厚さの不均一さが見られるが、発明例にかかる研磨後のウェーハは、より平坦度が高いことがわかる。 <Wafer shape>
FIG. 7A is a cross-sectional view showing the wafer shape after polishing according to the comparative example, and FIG. 7B is a cross-sectional view showing the wafer shape after polishing according to the invention example. 7A and 7B, the vertical axis indicates the thickness direction of the wafer. In FIGS. 7A and 7B, the horizontal axis indicates the distance from the wafer center when the wafer center is 0, and the radius of the wafer is R.
As shown in FIGS. 7 (a) and 7 (b), the polished wafer according to the comparative example is insufficient in the polishing amount at the center, and the thickness is not uniform as a whole. It can be seen that the polished wafer according to the above has higher flatness.

＜研磨量差＞
研磨量差を、ウェーハ下面の研磨量からウェーハ上面の研磨量を差し引いたものとして定義して評価した。
以下の表１に示すように、比較例にかかる研磨後のウェーハでは、ウェーハ上下面の研磨量の差が大きかったのに対し、発明例にかかる研磨後のウェーハでは、ウェーハ上下面の研磨量の差が小さいことがわかる。 <Polishing amount difference>
The polishing amount difference was defined and evaluated as the amount of polishing on the lower surface of the wafer minus the amount of polishing on the upper surface of the wafer.
As shown in Table 1 below, in the polished wafer according to the comparative example, the difference in polishing amount between the upper and lower surfaces of the wafer was large, whereas in the polished wafer according to the inventive example, the polished amount of the upper and lower surfaces of the wafer It can be seen that the difference is small.

Figure 0006197580
Figure 0006197580

＜上下表面粗さ（Ｒｍｓ）＞
研磨後のウェーハの上面、下面それぞれの表面粗さ（Ｒｍｓ）の計測結果を、以下の表２に示す。表２に示すように、発明例にかかる研磨ウェーハは、上面の表面粗さが小さくなっていることがわかる。また、下面についても比較例と同等の表面粗さとなっていることがわかる。 <Upper and lower surface roughness (Rms)>
Table 2 below shows the measurement results of the surface roughness (Rms) of the upper and lower surfaces of the polished wafer. As shown in Table 2, it can be seen that the surface roughness of the upper surface of the polished wafer according to the invention example is small. Moreover, it turns out that it is the surface roughness equivalent to a comparative example also about a lower surface.

Figure 0006197580
Figure 0006197580

以上のことから、発明例にかかるキャリアプレートを用いた場合には、両面研磨において、ウェーハの上面に研磨スラリーを十分に供給して、ウェーハ上面の研磨量を十分なものとすることができ、その結果、ウェーハ形状、上下面の研磨量の差、及び、上面の表面粗さを改善することができたことがわかる。   From the above, when using the carrier plate according to the invention example, in double-side polishing, it is possible to sufficiently supply the polishing slurry to the upper surface of the wafer, and to make the polishing amount of the upper surface of the wafer sufficient, As a result, it can be seen that the wafer shape, the difference in polishing amount between the upper and lower surfaces, and the surface roughness of the upper surface could be improved.

１ 両面研磨装置
２ 上定盤
３ 下定盤
４ 回転定盤
５ サンギア
６ インターナルギア
７ 研磨パッド
８ 保持孔
９ キャリアプレート
１０ 主溝
１１ 陸部
１２ 縁部
１３ 外周
１４ 副溝
１５ 断続副溝群
１６ 研磨スラリー
１７ スラリーノズル
１８ 穿孔
Ｗ ワーク（ウェーハ） DESCRIPTION OF SYMBOLS 1 Double-side polish apparatus 2 Upper surface plate 3 Lower surface plate 4 Rotating surface plate 5 Sun gear 6 Internal gear 7 Polishing pad 8 Holding hole 9 Carrier plate 10 Main groove 11 Land | gear part 12 Edge part 13 Outer part 14 Sub groove 15 Intermittent sub groove group 16 Polishing Slurry 17 Slurry nozzle 18 Perforation W Workpiece (wafer)

Claims (3)

ワークを保持する１つの保持孔を有する、ワークの両面研磨装置用のキャリアプレートであって、
前記キャリアプレートの少なくとも上面に、前記保持孔により区画される前記キャリアプレートの縁部間を延びる、複数本の主溝を設け、
前記主溝間、前記主溝と前記キャリアプレートの外周との間、及び前記主溝と前記縁部との間のうち、少なくとも１箇所を接続する副溝を設け、
前記副溝は、前記キャリアプレートの径方向において、前記縁部から前記キャリアプレートの外周までの間に途切れた部分を有するように設けてなることを特徴とする、ワークの両面研磨装置用のキャリアプレート。 A carrier plate for a workpiece double-side polishing apparatus having one holding hole for holding a workpiece,
A plurality of main grooves extending between edges of the carrier plate defined by the holding holes are provided on at least the upper surface of the carrier plate ,
Between the main grooves, between the main grooves and the outer periphery of the carrier plate, and between the main grooves and the edge, a sub-groove that connects at least one place is provided,
The carrier for a double-side polishing apparatus for a workpiece , wherein the sub-groove is provided so as to have a discontinuous portion between the edge portion and the outer periphery of the carrier plate in the radial direction of the carrier plate. plate. 前記複数本の主溝を、同心円状に設けてなる、請求項１に記載のワークの両面研磨装置用のキャリアプレート。   2. The carrier plate for a workpiece double-side polishing apparatus according to claim 1, wherein the plurality of main grooves are provided concentrically. 上定盤及び下定盤を有する回転定盤と、前記回転定盤の中心部に設けられたサンギアと、前記回転定盤の外周部に設けられたインターナルギアと、前記上定盤と前記下定盤との間に設けられた、請求項１又は２に記載のキャリアプレートと、を備えたことを特徴とする、ワークの両面研磨装置。
A rotating surface plate having an upper surface plate and a lower surface plate, a sun gear provided at a central portion of the rotating surface plate, an internal gear provided at an outer peripheral portion of the rotating surface plate, the upper surface plate, and the lower surface plate It provided between, characterized by comprising a carrier plate according to claim 1 or 2, double-side polishing apparatus of a work.
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PCT/JP2014/002975 WO2015063969A1 (en) 2013-10-29 2014-06-04 Carrier plate and workpiece double-side polishing device
DE112014004942.5T DE112014004942T5 (en) 2013-10-29 2014-06-04 Carrier plate and double-sided workpiece polishing device
CN201480059761.2A CN105916631B (en) 2013-10-29 2014-06-04 The two sides lapping device of carrier board and workpiece
KR1020167010779A KR101768553B1 (en) 2013-10-29 2014-06-04 Carrier plate and workpiece double-side polishing device
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