JP6187659B2 - LED lead frame or substrate and manufacturing method thereof, and semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to an LED lead frame or substrate on which an LED element is mounted and a manufacturing method thereof, and a semiconductor device having such an LED lead frame or substrate and a manufacturing method thereof.

  2. Description of the Related Art Conventionally, lighting devices that use LED (light emitting diode) elements as light sources have been used for various home appliances, OA equipment, display lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some of such lighting devices include a semiconductor device having an LED substrate and LED elements.

  As such a semiconductor device, for example, in Patent Document 1, a concave portion is formed on one surface side of a lead frame made of Cu substrate, an LED element is mounted on the concave portion, and an insulating layer disposed on the concave portion side is formed. It is described that a Cu wiring layer for connection is formed, the terminal portion of the LED and the Cu wiring layer are connected by wire bonding, and resin-sealed. Moreover, in patent document 1, Ag plating is given to the Cu wiring layer surface.

JP 2006-245032 A

  By the way, as described above, an Ag plating layer (reflection metal layer) having reflection characteristics is applied on the lead frame. When heat is applied to such a semiconductor device, it is included in the substrate (main body portion). Copper may diffuse to the surface of the Ag plating layer, resulting in deterioration of solder wettability and bonding properties, and the Ag plating layer on the lead frame surface may be discolored to significantly reduce the reflectance of the Ag plating layer. End up.

  In this case, it has been studied to provide a barrier layer for suppressing copper diffusion under the Ag plating layer or to increase the film thickness of the Ag plating layer. However, there are problems that both increase the manufacturing cost.

  The present invention has been made in consideration of such points, and it is possible to prevent the copper contained in the substrate body from diffusing into the reflective metal layer, and to reduce the manufacturing cost. An object is to provide an LED lead frame or substrate and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof.

  The present invention provides an LED lead frame or substrate on which an LED element is mounted, a main body having a mounting surface on which the LED element is mounted, and a mounting surface of the main body, and reflects light from the LED element. A reflective metal layer that functions as a reflective layer, the reflective metal layer includes silver or a silver alloy, the main body includes copper or a copper alloy, and the reflective metal layer and the main body An intermediate intervening layer made of copper or a copper alloy is provided between them, and a piece of copper oxide is formed in the reflective metal layer at a position corresponding to the crystal grain boundary of the reflective metal layer. The lead frame or the substrate for LED is characterized by preventing the copper of the metal from diffusing to the surface of the reflective metal layer.

  In the present invention, the copper oxide piece is heated in the oxygen-containing atmosphere in the body portion, the intermediate intervening layer, and the reflective metal layer, and oxygen in the oxygen-containing atmosphere passes through the crystal grain boundary of the reflective metal layer. An LED lead frame or substrate formed by reacting with copper from an intervening layer.

  The present invention provides an LED lead frame or substrate on which an LED element is mounted, a main body having a mounting surface on which the LED element is mounted, and a mounting surface of the main body, and reflects light from the LED element. A reflective metal layer that functions as a reflective layer, the reflective metal layer includes silver or a silver alloy, and the main body includes copper or a copper alloy, and is within the reflective metal layer and is reflective. A lead frame for an LED, wherein a copper oxide piece is formed at a position corresponding to a crystal grain boundary of the metal layer for the metal, thereby preventing the copper from the main body from diffusing to the surface of the metal layer for reflection. Or a substrate.

  In the present invention, the copper oxide piece is obtained by heating the main body portion and the reflective metal layer in an oxygen-containing atmosphere, and oxygen in the oxygen-containing atmosphere passes through the crystal grain boundary of the reflective metal layer, and the copper from the main body portion. It is formed by reacting with the LED lead frame or substrate.

  The present invention prevents the copper from diffusing to the surface of the reflective metal layer at the position corresponding to the crystal grain boundary of the reflective metal layer and the surface of the reflective metal layer. An LED lead frame or substrate, characterized in that a smoothed metal lid piece is provided.

  The present invention is the lead frame or substrate for LED, wherein the metal lid piece is made of indium, palladium, rhodium or tin, or an oxide of these metals.

  The present invention relates to an LED lead frame or substrate having a main body portion including a mounting surface on which an LED element is mounted, an LED element mounted on the mounting surface of the lead frame or the main body portion of the substrate, and a lead frame. Alternatively, a conductive portion that electrically connects the substrate and the LED element, and a sealing resin portion that seals the LED element and the conductive portion, the LED lead frame or the mounting surface of the main body portion of the substrate, the LED A reflective metal layer that functions as a reflective layer for reflecting light from the element is provided, the reflective metal layer includes silver or a silver alloy, the main body includes copper or a copper alloy, and the reflective metal layer An intermediate intervening layer made of copper or a copper alloy is provided between the metal body and the main body, and a piece of copper oxide is formed in the reflective metal layer at a position corresponding to the crystal grain boundary of the reflective metal layer. The copper from the intermediate intervening layer A semiconductor device which is characterized in that to prevent diffusion to the surface.

  In the present invention, the copper oxide piece is heated in the oxygen-containing atmosphere in the body portion, the intermediate intervening layer, and the reflective metal layer, and oxygen in the oxygen-containing atmosphere passes through the crystal grain boundary of the reflective metal layer. The semiconductor device is formed by reacting with copper from an intervening layer.

  The present invention relates to an LED lead frame or substrate having a main body portion including a mounting surface on which an LED element is mounted, an LED element mounted on the mounting surface of the lead frame or the main body portion of the substrate, and a lead frame. Alternatively, a conductive portion that electrically connects the substrate and the LED element, and a sealing resin portion that seals the LED element and the conductive portion, the LED lead frame or the mounting surface of the main body portion of the substrate, the LED A reflective metal layer that functions as a reflective layer for reflecting light from the element is provided, the reflective metal layer includes silver or a silver alloy, the main body includes copper or a copper alloy, and the reflective metal layer A copper oxide piece is formed at a position corresponding to the crystal grain boundary of the reflective metal layer, thereby preventing copper from the main body from diffusing to the surface of the reflective metal layer. It is a semiconductor device.

  In the present invention, the copper oxide piece is obtained by heating the main body portion and the reflective metal layer in an oxygen-containing atmosphere, and oxygen in the oxygen-containing atmosphere passes through the crystal grain boundary of the reflective metal layer, and the copper from the main body portion. It is a semiconductor device formed by reacting with

  The present invention prevents the copper from diffusing to the surface of the reflective metal layer at the position corresponding to the crystal grain boundary of the reflective metal layer and the surface of the reflective metal layer. A semiconductor device is provided with a smoothed metal lid piece.

  The present invention is a semiconductor device characterized in that the metal lid piece is made of indium, palladium, rhodium, tin, or an oxide of these metals.

  The present invention relates to a method for manufacturing an LED lead frame or substrate for manufacturing an LED lead frame or substrate for mounting an LED element, and a step of preparing a main body having a mounting surface for mounting the LED element; A step of forming an intermediate intervening layer on the part, and a step of forming a reflective metal layer functioning as a reflective layer on the intermediate intervening layer, the reflective metal layer including silver or a silver alloy; The main body portion includes copper or a copper alloy, the intermediate intervening layer includes copper or a copper alloy, and the main body portion, the intermediate intervening layer, and the reflective metal layer are heat-treated to be within the reflective metal layer. For LED, wherein copper oxide pieces are formed at positions corresponding to the crystal grain boundaries of the reflective metal layer, thereby preventing copper from the intermediate intervening layer from diffusing to the surface of the reflective metal layer. Lead frame or board manufacturing It is a method.

  In the present invention, the copper oxide piece is heated in the oxygen-containing atmosphere in the body portion, the intermediate intervening layer, and the reflective metal layer, and oxygen in the oxygen-containing atmosphere passes through the crystal grain boundary of the reflective metal layer. It is a method for manufacturing an LED lead frame or substrate, which is formed by reacting with copper from an intervening layer.

  The present invention relates to a method for manufacturing an LED lead frame or substrate for manufacturing an LED lead frame or substrate for mounting an LED element, and a step of preparing a main body having a mounting surface for mounting the LED element; Forming a reflective metal layer functioning as a reflective layer on the part, the reflective metal layer includes silver or a silver alloy, the main body part includes copper or a copper alloy, and the main body part; By heat-treating the reflective metal layer, a copper oxide piece is formed in the reflective metal layer at a position corresponding to the crystal grain boundary of the reflective metal layer. It is a manufacturing method of the lead frame for LED or a board | substrate characterized by preventing spreading | diffusion to the surface of a layer.

  In the present invention, the copper oxide piece is obtained by heating the main body portion and the reflective metal layer in an oxygen-containing atmosphere, and oxygen in the oxygen-containing atmosphere passes through the crystal grain boundary of the reflective metal layer, and the copper from the main body portion. It is formed by reacting with the LED lead frame or substrate manufacturing method.

  The present invention prevents the copper from diffusing to the surface of the reflective metal layer at the position corresponding to the crystal grain boundary of the reflective metal layer and the surface of the reflective metal layer. An LED lead frame or substrate manufacturing method comprising a smoothed metal lid piece.

  The present invention is a method for manufacturing a lead frame for an LED or a substrate, wherein the metal lid piece is made of indium, palladium, rhodium, tin, or an oxide of these metals.

  The present invention provides a method of manufacturing a semiconductor device, a step of preparing a main body having a mounting surface on which an LED element is mounted, a step of forming an intermediate intervening layer on the main body, and an intermediate intervening layer. A step of forming a reflective metal layer that functions as a reflective layer, a step of placing the LED element on the mounting surface of the main body, and connecting the LED element and the main body by a conductive portion; and the LED element and the conductive portion The reflective metal layer includes silver or a silver alloy, the main body includes copper or a copper alloy, and the intermediate intervening layer includes copper. Or, including the copper alloy, before mounting the LED element on the mounting surface of the main body, by heat-treating the main body, the intermediate intervening layer, and the reflective metal layer, A piece of copper oxide is formed at a position corresponding to the grain boundary of the reflective metal layer. A method of manufacturing a semiconductor device, wherein the copper from the layer is prevented from diffusing to the surface of the reflective metal layer.

  In the present invention, the copper oxide piece is heated in the oxygen-containing atmosphere in the body portion, the intermediate intervening layer, and the reflective metal layer, and oxygen in the oxygen-containing atmosphere passes through the crystal grain boundary of the reflective metal layer. A method of manufacturing a semiconductor device, wherein the semiconductor device is formed by reacting with copper from an intervening layer.

  The present invention provides a method of manufacturing a semiconductor device, a step of preparing a main body having a mounting surface on which an LED element is mounted, a step of forming a reflective metal layer functioning as a reflective layer on the main body, A step of placing the LED element on the mounting surface of the main body, connecting the LED element and the main body with the conductive portion, and a step of sealing the LED element and the conductive portion with a translucent sealing resin portion The reflective metal layer includes silver or a silver alloy, the main body includes copper or a copper alloy, and before the LED element is mounted on the mounting surface of the main body, By heat-treating the reflective metal layer, a copper oxide piece is formed in the reflective metal layer at a position corresponding to the crystal grain boundary of the reflective metal layer. A method for manufacturing a semiconductor device, characterized in that diffusion to the surface of a layer is prevented

  In the present invention, the copper oxide piece is obtained by heating the main body portion and the reflective metal layer in an oxygen-containing atmosphere, and oxygen in the oxygen-containing atmosphere passes through the crystal grain boundary of the reflective metal layer, and the copper from the main body portion. It is formed by reacting with the semiconductor device.

  The present invention prevents the copper from diffusing to the surface of the reflective metal layer at the position corresponding to the crystal grain boundary of the reflective metal layer and the surface of the reflective metal layer. A method for manufacturing a semiconductor device is provided with a smoothed metal lid piece.

  The present invention is the method of manufacturing a semiconductor device, wherein the metal cover piece is made of indium, palladium, rhodium, tin, or an oxide of these metals.

  According to the present invention, the copper oxide piece is formed in the reflective metal layer at a position corresponding to the crystal grain boundary of the reflective metal layer. For this reason, it can suppress that the copper from an intermediate | middle intervening layer diffuses to the metal layer surface for reflection, and can also suppress that the copper from a main-body part diffuses to the metal layer surface for reflection. Thereby, it can suppress that the reflectance of the reflective metal layer which has a reflective characteristic falls, and can also suppress that the wettability or bonding characteristic of a reflective metal layer falls.

FIG. 1 is a cross-sectional view showing a lead frame or a substrate according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a modification of the lead frame or the substrate. FIG. 3 is a sectional view showing a semiconductor device according to an embodiment of the present invention (a sectional view taken along line III-III in FIG. 4). FIG. 4 is a plan view showing a semiconductor device according to an embodiment of the present invention. 5A, 5B, 5C, 5D, and 5E are views showing a method for manufacturing a lead frame according to an embodiment of the present invention. 6A, 6B, 6C, 6D, 6E, 6G, and 6G are views showing a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 7 is a view showing a copper oxide piece formed in a reflective metal layer according to the present invention. FIG. 8 is a diagram showing a reflective metal layer and an intermediate intervening layer according to a comparative example. FIG. 9 is a view showing the diffusion action of copper from the intermediate intervening layer. FIGS. 10A and 10B are views showing a state in the vicinity of the surface of the reflective metal layer. FIG. 11 is a cross-sectional view illustrating a modified example (modified example 1) of the semiconductor device. FIG. 12 is a cross-sectional view showing a modified example (modified example 2) of the semiconductor device. FIG. 13 is a cross-sectional view illustrating a modified example (modified example 3) of the semiconductor device. FIG. 14 is a cross-sectional view showing a modification (Modification 4) of the semiconductor device. FIG. 15 is a cross-sectional view showing a modified example (modified example 5) of the semiconductor device. FIG. 16 is a cross-sectional view showing a modified example (modified example 6) of the semiconductor device.

  Embodiments of the present invention will be described below with reference to FIGS.

Configuration of LED Lead Frame or Substrate First, an outline of an LED lead frame or substrate will be described with reference to FIGS. In FIG. 1 and FIG. 2, for the sake of convenience, the LED lead frame or the substrate is shown in a rectangular shape in order to explain the layer structure of the LED lead frame or the substrate.

  As shown in FIG. 1, an LED lead frame or substrate 10 (hereinafter also referred to as a lead frame 10 or a substrate 10) is used for mounting an LED element 21 (described later). Is provided with a main body part 11 having a mounting surface 11a on which is mounted, and a reflective metal layer 12 provided on the mounting surface 11a of the main body part 11 via an intermediate intermediate layer 15 described later.

  Among these, the main-body part 11 consists of a metal plate, and the material consists of copper or a copper alloy. The thickness of the main body 11 is preferably 0.05 mm to 0.5 mm in the case of the lead frame 10 and 0.005 mm to 0.03 mm in the case of the substrate 10 although it depends on the configuration of the semiconductor device.

  The reflective metal layer 12 functions as a reflective layer for reflecting the light from the LED element 21, and is located on the outermost surface side of the LED lead frame or the substrate 10. The reflective metal layer 12 is made of silver or a silver alloy, for example, a silver plating layer (Ag plating layer), has a high visible light reflectivity, and has high corrosion resistance to oxygen.

  As the reflective metal layer 12, an alloy of silver and gold, an alloy of silver and platinum, an alloy of silver and indium, an alloy of silver and palladium, or an alloy of silver and tin can be used.

  The reflective metal layer (hereinafter also referred to as a silver plating layer) 12 has a thickness of 0.5 μm to 15 μm.

  Further, as described above, the intermediate intervening layer 15 is provided between the main body 11 and the reflective metal layer 12. The intermediate intervening layer 15 is made of copper or a copper alloy, for example, a copper plating layer (Cu plating layer).

  An intermediate intervening layer (hereinafter also referred to as a copper plating layer) 15 is used as an underlayer for the silver layer 12, and the copper plating layer 15 can be formed by, for example, electrolytic plating. The thickness of the copper plating layer 15 is preferably 0.005 μm to 2.0 μm.

  In this case, a large number of copper oxide pieces 12A are formed in the vicinity of the interface L between the reflective metal layer 12 and the intermediate intervening layer 15 and at positions corresponding to the crystal grain boundaries 12a of the reflective metal layer 12. (See FIG. 7).

  As described above, the copper oxide pieces 12A are formed in the vicinity of the interface L between the reflective metal layer 12 and the intermediate intervening layer 15 and at positions corresponding to the crystal grain boundaries 12a of the reflective metal layer 12. Even if the lead frame 10 is heated, copper atoms from the copper plating layer 15 are prevented from diffusing to the silver plating layer 12 side.

  Further, as shown in FIG. 7, a large number of metal lid pieces 12B are provided on the surface 12s of the reflective metal layer (silver plating layer) 12 at positions corresponding to the crystal grain boundaries 12a of the reflective metal layer 12. Yes.

  This metal lid piece 12B also prevents the copper atoms from diffusing to the surface 12s of the silver plating layer 12 when the copper atoms are transferred from the copper plating layer 15 to the silver plating layer 12 side by the copper oxide piece 12A. In addition, the surface 12 s of the silver plating layer 12 is smoothed to increase the reflectance of the silver plating layer 12. The details of the copper oxide piece 12A and the metal lid piece 12B will be described later.

  Moreover, as shown in FIG. 2, the structure which does not provide the copper plating layer 15 is also possible. In this case, the lead frame 10 includes a main body portion 11 made of copper or a copper alloy, and a reflective metal layer 12 made of silver or a silver alloy, for example, a silver plating layer, provided on the main body portion 11. Yes.

Configuration of Semiconductor Device Next, an embodiment of a semiconductor device using the LED lead frame or substrate shown in FIG. 1 will be described with reference to FIGS. FIG. 3 is a sectional view showing a semiconductor device (SON type) according to one embodiment of the present invention, and FIG. 4 is a plan view showing the semiconductor device according to one embodiment of the present invention.

  As shown in FIGS. 3 and 4, the semiconductor device 20 includes an LED lead frame 10, an LED element 21 placed on the placement surface 11 a of the main body 11 of the lead frame 10, the lead frame 10, and the LED. A bonding wire (conductive portion) 22 that electrically connects the element 21 is provided.

  Moreover, the outer side resin part 23 which has the recessed part 23a is provided so that the LED element 21 may be surrounded. The outer resin portion 23 is integrated with the lead frame 10. Furthermore, the LED element 21 and the bonding wire 22 are sealed with a light-transmitting sealing resin portion 24. The sealing resin portion 24 is filled in the concave portion 23 a of the outer resin portion 23. Hereinafter, the respective constituent members constituting such a semiconductor device 20 will be sequentially described.

  The lead frame 10 is provided on the main body portion 11 having the mounting surface 11a, the intermediate intervening layer 15 provided on the front surface and the back surface including the mounting surface 11a of the main body portion 11, and the intermediate intervening layer 15. 21 has a silver or silver alloy functioning as a reflective layer for reflecting the light from 21, for example, a reflective metal layer 12 made of a silver plating layer. The intermediate intervening layer 15 is made of a copper plating layer, and a groove 19 is formed on the surface (upper surface) of the lead frame 10 for improving the adhesion between the lead frame 10 and the outer resin portion 23.

  Since the layer structure of the lead frame 10 is the same as that already described with reference to FIG. 1, a detailed description thereof is omitted here, but in this case, only the surface of the main body 11 of the lead frame 10 is intermediate. The intervening layer 15 and the reflective metal layer 12 may be provided (see FIG. 1), and the intermediate intervening layer 15 and the reflective metal layer 12 may be provided on the front and back surfaces of the main body 11 of the lead frame 10 (see FIG. 3). reference). As the layer structure of the lead frame 10, the structure shown in FIG. 2 may be used. In this case, the reflective metal layer 12 may be provided only on the surface of the main body 11 of the lead frame 10 (see FIG. 2), and the reflective metal layer 12 is provided on the front and back surfaces of the main body 11 of the lead frame 10. Also good.

  In the present embodiment, the main body portion 11 of the lead frame 10 includes a first portion 25 (die pad) on the LED element 21 side and a second portion 26 (lead portion) spaced from the first portion 25. doing. An outer side resin portion 23 is filled between the first portion 25 and the second portion 26, and the first portion 25 and the second portion 26 are electrically insulated from each other.

  A first outer lead portion 27 is formed on the bottom surface of the first portion 25, and a second outer lead portion 28 is formed on the bottom surface of the second portion 26. The first outer lead portion 27 and the second outer lead portion 28 are exposed outward from the outer resin portion 23, respectively.

  The LED element 21 selects an emission wavelength ranging from ultraviolet light to infrared light by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, AlInGaP, or InGaN as a light emitting layer. Can do. As such an LED element 21, those conventionally used in general can be used.

  The LED element 21 is fixed on the mounting surface 11a of the main body 11 (strictly on the reflective metal layer 12) in the recess 23a of the outer resin portion 23 by solder or die bonding paste. When using a die bonding paste, it is possible to select a die bonding paste made of an epoxy resin or a silicone resin having light resistance.

  The bonding wire 22 is made of a material having good conductivity such as gold, and one end thereof is connected to the terminal portion 21 a of the LED element 21, and the other end is the surface of the second portion 26 of the main body portion 11 of the lead frame 10. Connected on top.

  The outer resin portion 23 is formed, for example, by injection molding or transfer molding of a thermoplastic resin or a thermosetting resin on the lead frame 10. The shape of the outer resin portion 23 can be variously realized by designing a mold used for injection molding or transfer molding. For example, the overall shape of the outer resin portion 23 can be a rectangular parallelepiped shape, a cylindrical shape, a cone shape, or the like. The bottom surface of the recess 23a can be circular, elliptical, polygonal, or the like. The cross-sectional shape of the side wall of the recess 23a may be constituted by a straight line as shown in FIG. 3, or may be constituted by a curve.

  Regarding the thermoplastic resin or thermosetting resin used for the outer resin portion 23, it is particularly preferable to select a resin having excellent heat resistance, weather resistance and mechanical strength. As the types of thermoplastic resins, polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, polybutylene terephthalate, polyetherimide, etc., the types of thermosetting resins are silicone resins, epoxy resins, And polyurethane can be used. Furthermore, by adding any one of titanium dioxide, zirconium dioxide, potassium titanate, aluminum nitride and boron nitride as a light reflecting agent in these resins, the LED element 21 can be formed on the bottom and side surfaces of the recess 23a. Thus, it becomes possible to increase the light extraction efficiency of the entire semiconductor device 20.

  For the sealing resin portion 24, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the semiconductor device 20 in order to improve the light extraction efficiency. Therefore, it is possible to select an epoxy resin or a silicone resin as a resin that satisfies the characteristics of high heat resistance, weather resistance, and mechanical strength. In particular, when a high-brightness LED is used as the LED element 21, the sealing resin portion 24 is preferably made of a silicone resin having high weather resistance because the sealing resin portion 24 is exposed to strong light.

  Incidentally, as shown in FIG. 1, the lead frame 10 has a main body portion 11 made of copper or copper alloy having a mounting surface 11 a on which the LED element 21 is mounted, and a front surface and a back surface including the mounting surface 11 a of the main body portion 11. And a reflective metal layer 12 made of a silver plated layer, for example, and an intermediate intervening layer 15 made of a copper plated layer is interposed between the main body 11 and the reflective metal layer 12. Intervened.

  In this case, a large number of copper oxide pieces 12A are formed in the vicinity of the interface L between the reflective metal layer 12 and the intermediate intervening layer 15 and at positions corresponding to the crystal grain boundaries 12a of the reflective metal layer 12. (See FIG. 7).

  As described above, the copper oxide pieces 12A are formed in the vicinity of the interface L between the reflective metal layer 12 and the intermediate intervening layer 15 and at positions corresponding to the crystal grain boundaries 12a of the reflective metal layer 12. Even if the lead frame 10 is heated, copper atoms from the copper plating layer 15 are prevented from diffusing to the silver plating layer 12 side.

  That is, as will be described later, the lead frame 10 is subjected to a die bonding process or a wire bonding process in a later process, and the lead frame 10 is heated in such a die bonding process or a wire bonding process.

  In such a case, it is considered that when the lead frame 10 is heated, copper atoms in the copper plating layer 15 diffuse to the silver plating layer 12 side and appear on the surface of the silver plating layer 12.

  Here, FIG. 8 and FIG. 9 show the behavior of copper atoms in the copper plating layer 15 during heating. As in the comparative example shown in FIG. 8, when no copper oxide pieces are formed in the vicinity of the interface L between the silver plating layer 12 and the copper plating layer 15, the copper atoms in the copper plating layer 15 during heating are It reaches the interface L through the grain boundary. Thereafter, the copper atoms diffuse through the grain boundaries of the silver plating layer 12 and appear on the surface of the silver plating layer 12 (FIG. 9).

  Here, the thickness of the silver plating layer 12 is 2.5 μm, the thickness of the copper plating layer 15 is 1.0 μm, and the average crystal grain size is 0.6 μm or less for both the silver plating layer 12 and the copper plating layer 15. . In addition, the length of the crystal grains in the cross-sectional direction in the vicinity of the interface between the silver plating layer 12 and the copper plating layer 15 is also 0.5 μm or less.

  On the other hand, according to the present invention, a large number of copper oxide pieces are located in the vicinity of the interface L between the reflective metal layer 12 and the intermediate intervening layer 15 and at positions corresponding to the crystal grain boundaries 12a of the reflective metal layer 12. 12A is formed (FIG. 7). In the present invention shown in FIG. 7, the thickness of the silver plating layer 12 is 2.5 μm, and the average crystal grain size of the crystal surrounded by the crystal grain boundary 12 a in the silver plating layer 12 is 0.7 to 10 μm.

  The average particle diameter of the copper oxide pieces 12A formed on the reflective metal layer 12 is 0.01 to 2 μm.

  According to the present invention, the copper oxide piece 12 </ b> A formed in the vicinity of the interface L between the silver plating layer 12 and the copper plating layer 15 functions as a cap that closes the crystal grain boundary 12 a of the silver plating layer 12. For this reason, when the lead frame 10 is heated, the copper atoms in the copper plating layer 15 reach the interface L through the crystal grain boundary, but are formed at positions corresponding to the crystal grain boundaries 12a of the silver plating layer 12 in the vicinity of the interface L. In addition, since a large number of copper oxide pieces 12A function as caps that block the crystal grain boundaries 12a, copper atoms are prevented from diffusing into the silver plating layer 12 thereafter.

  As described above, according to the present invention, copper atoms in the copper plating layer 15 diffuse into the silver plating layer 12 when the lead frame 10 is heated during crystal state change or semiconductor device assembly and LED light emission under use environment. And appearing on the surface of the silver plating layer 12 is suppressed. As described above, since copper is prevented from folding out on the surface of the silver plating layer 12, the reflection characteristic (reflectance) of the silver plating layer 12 is not lowered, and the solder wettability of the surface of the silver plating layer 12 is not reduced. It is possible to prevent deterioration and bonding wire property deterioration.

  Further, as shown in FIG. 7, a large number of metal lid pieces 12B are provided on the surface 12s of the reflective metal layer (silver plating layer) 12 at positions corresponding to the crystal grain boundaries 12a of the reflective metal layer 12. Yes.

  This metal lid piece 12B also prevents the copper atoms from diffusing to the surface 12s of the silver plating layer 12 when the copper atoms are transferred from the copper plating layer 15 to the silver plating layer 12 side by the copper oxide piece 12A. In addition, the surface 12 s of the silver plating layer 12 is smoothed to increase the reflectance of the silver plating layer 12.

  The metal cover piece 12B is made of indium, palladium, rhodium or tin, or indium oxide, palladium oxide, rhodium oxide or tin oxide, and the metal cover piece 12B is formed of the silver plating layer 12. It can be formed by plating on the surface 12s.

  Here, FIGS. 10A and 10B are views showing a state in the vicinity of the surface of the reflective metal layer.

  As shown in FIGS. 10A and 10B, crystal grain boundaries 12 a are formed in the silver plating layer 12, and many crystal defects 12 f are concentrated in the vicinity of the crystal grain boundaries 12 a of the silver plating layer 12.

  Thus, many crystal defects 12f are concentrated in the vicinity of the crystal grain boundary 12a and are unstable with respect to the outside world. For this reason, when the lead frame 10 is heated, the copper atoms from the copper plating layer 15 try to move to the surface 12s side of the silver plating layer 12 through this crystal grain boundary 12a (see FIG. 10B).

  According to the present invention, since the metal lid piece 12B is formed at a position corresponding to the crystal grain boundary 12a in the surface 12s of the silver plating layer 12, the metal lid piece 12B covers the crystal grain boundary 12a. . For this reason, copper atoms do not diffuse to the surface 12s side of the silver plating layer 12 (see FIG. 10A).

  Further, since the vicinity of the crystal grain boundary 12a is unstable with respect to the outside world, silver in the silver plating layer 12 reacts with, for example, sulfur in the outside world in the vicinity of the crystal grain boundary 12a to form silver sulfide. It is also conceivable that the reflectance of the layer 12 is lowered (see FIG. 10B).

  On the other hand, according to the present invention, the metal lid 12B is formed at a position corresponding to the crystal grain boundary 12a in the surface 12s of the silver plating layer 12, so that the vicinity of the crystal grain boundary 12a of the silver plating layer 12 In this case, silver sulfide or the like is not generated (see FIG. 10A).

  By the way, as shown in FIG. 7, an example in which a copper oxide piece 12 </ b> A is formed in the vicinity of the interface L between the silver plating layer 12 and the copper plating layer 15 and at a position corresponding to the crystal grain boundary 12 a of the silver plating layer 12. However, the copper oxide piece 12A may be formed at a position corresponding to the crystal grain boundary 12a away from the interface L in the silver plating layer 12, and in this case, the crystal grain boundary 12a is formed from the copper plating layer 15 side. It is possible to prevent the diffusion of copper atoms that travel to the surface 12 s side of the silver plating layer 12.

  In any case, the copper oxide pieces 12A are scattered at positions corresponding to the crystal grain boundaries 12a in the silver plating layer 12, for example, at the interface L between the silver plating layer 12 and the copper plating layer 15. It is not formed into a film.

  Thus, when copper oxide is formed in the form of a film at the interface L, there is a problem in the adhesion of the silver plating layer 12 to the copper plating layer 15, but the copper oxide pieces 12A are scattered in the silver plating layer 12. The adhesion of the silver plating layer 12 to the copper plating layer 15 is not affected.

  In addition, as shown in FIG. 2, the lead frame 10 may have a main body portion 11 made of copper or a copper alloy and a reflective metal layer 12 made of silver or a silver alloy on the main body portion 11, for example, a silver plating layer. In the vicinity of the interface between the main body portion 11 and the reflective metal layer 12, a large number of copper oxides 12A are formed at positions corresponding to the crystal grain boundaries 12a of the silver plating layer of the reflective metal layer 12.

  For this reason, as described above, even when the lead frame 10 is heated, copper atoms in the copper or copper alloy of the main body 11 do not diffuse to the silver plating layer 12 side.

  Here, the “average crystal grain size” in this specification is an average crystal grain size when the particles are regarded as pseudo spheres, and was calculated as follows. First, the cut surface of the lead frame cut out by a microtome (Leica EM UC6) was observed using an SEM (manufactured by JEOL Ltd., product name: JSM-7001F), and an EBSP detector (manufactured by TSL, condition: tilt 70). The crystal orientation was determined using a degree, an acceleration voltage of 15 kV, and an applied current of 10 nA) to determine the boundaries of the grain boundaries.

  Next, it was assumed that the center of the crystal grain appeared in the cross section of the particle observed by the SEM image, and the cross section was subjected to image processing, and a pseudo sphere was defined. Based on the size of the pseudo sphere, the average crystal grain size was measured.

Manufacturing Method of LED Lead Frame Next, a manufacturing method of the LED lead frame 10 used in the semiconductor device 20 shown in FIGS. 3 and 4 will be described with reference to FIGS.

  First, as shown in FIG. 5A, a main body 11 made of a metal substrate is prepared. As the main body 11, a metal substrate made of copper or a copper alloy as described above can be used. In addition, it is preferable to use what the main-body part 11 performed the degreasing | defatting etc. to the both surfaces, and performed the washing process.

  Next, a photosensitive resist is applied to the front and back surfaces of the main body 11 and dried, exposed through a desired photomask, and then developed to form etching resist layers 32 and 33 (FIG. 5B). ). In addition, a conventionally well-known thing can be used as a photosensitive resist.

  Next, the etching resist layers 32 and 33 are used as an anticorrosion film, and the main body portion 11 is etched with an etching solution (FIG. 5C). The corrosive liquid can be appropriately selected according to the material of the main body 11 to be used. For example, when copper is used as the main body 11, an aqueous ferric chloride solution is usually used and sprayed from both surfaces of the main body 11. It can be performed by etching.

  Next, the etching resist layers 32 and 33 are peeled and removed. In this way, the main body 11 having the first part (die pad) 25 and the second part (lead part) 26 spaced from the first part 25 is obtained (FIG. 5D). At this time, a groove 19 is formed on the surface (upper surface) of the main body 11 by half etching.

  Next, the intermediate intervening layer 15 and the reflective metal layer 12 are sequentially formed over the entire surface including the front side, the back side, and the side surfaces of the main body 11 (FIG. 5E).

  At this time, electrolytic plating is performed on the entire surface including the front surface side, the back surface side, and the side surface of the main body 11. As a result, metal (copper) is deposited on the main body 11 to form a copper plating layer 15 on the main body 11. As a plating solution for electrolytic plating for forming the copper plating layer 15, a copper plating solution mainly composed of copper cyanide and potassium cyanide can be used.

  The copper plating layer 15 constitutes an intermediate intervening layer.

  Furthermore, the reflective metal layer 12 is obtained by forming the silver plating layer 12 on the intermediate | middle intervening layer 15 (FIG.5 (e)).

  Next, the lead frame 10 composed of the main body 11, the intermediate intermediate layer 15, and the reflective metal layer 12 is heated and subjected to heat treatment (FIG. 5F).

  In this heat treatment, the lead frame 10 is first heated rapidly. For example, the lead frame 10 is heated in the air in the furnace F (in an oxygen-containing atmosphere) by the hot plate H for about 30 seconds to 10 minutes, and the temperature of the lead frame 10 is increased from room temperature to 300 ° C. to 500 ° C.

  As described above, the lead frame 10 is rapidly heated to 300 ° C. to 500 ° C. by the hot plate H in the air, so that oxygen in the air passes through the crystal grain boundaries 12 a of the silver plating layer 12 and the inside of the silver plating layer 12. Reach up to. Next, the oxygen that has entered the inside of the silver plating layer 12 reacts with copper from the copper plating layer 15 in the vicinity of the interface L between the silver plating layer 12 and the copper plating layer 15 to generate a large number of copper oxide pieces 12A. As a result, a copper oxide piece 12A is formed in the silver plating layer 12 near the interface L between the silver plating layer 12 and the copper plating layer 15 at a position corresponding to the crystal grain boundary 12a of the silver plating layer 12. .

  Thereafter, the lead frame 10 is annealed in the furnace F. As a result, the silver in the silver plating layer 12 can be recrystallized, thereby increasing the average crystal grain size in the silver plating layer.

  Thereafter, on the surface 12s of the silver plating layer 12 of the lead frame 10 and at a position corresponding to the crystal grain boundary 12a of the silver plating layer 12, a metal cover piece made of indium, palladium, rhodium, tin, or an oxide of these metals. 12B is formed by a plating process. In this way, copper is diffused to the surface 12s of the silver plating layer 12 by forming the metal cover piece 12B at the position corresponding to the crystal grain boundary 12a of the silver plating layer 12 on the surface 12s of the silver plating layer 12. And the surface 12s of the silver plating layer 12 can be finished smoothly.

  As described above, the reflective metal layer 12 is made of silver or a silver alloy, for example, a silver plating layer, but the reflective metal layer 12 can be formed by sputtering, ion plating, vapor deposition, or the like. As the reflective metal layer 12, an alloy of silver and gold, an alloy of silver and platinum, an alloy of silver and indium, an alloy of silver and palladium, or an alloy of silver and tin may be used.

  In FIGS. 5A to 5E, the main body 11 is made into a predetermined shape by etching (FIGS. 5A to 5D), and then the intermediate intervening layer 15 is formed on the main body 11 and A reflective metal layer 12 is formed (FIG. 5E). However, the present invention is not limited thereto, and first, the intermediate intervening layer 15 and the reflective metal layer 12 may be formed on the main body 11, and then the main body 11 may be processed into a predetermined shape by etching.

Manufacturing Method of Semiconductor Device Next, a manufacturing method of the semiconductor device 20 shown in FIGS. 3 and 4 will be described with reference to FIGS.

  First, by the above-described steps (FIGS. 5A to 5G), the main body 11 having the mounting surface 11a and the reflective metal layer 12 functioning as a reflective layer for reflecting the light from the LED element 21. Then, the lead frame 10 including the reflective metal layer 12 and the intermediate intervening layer 15 provided between the main body portion 11 is manufactured (FIG. 6A).

  Next, the outer resin portion 23 is formed by injection molding or transfer molding of a thermoplastic resin to the lead frame 10 (FIG. 6B). Thereby, the outer side resin part 23 and the lead frame 10 are integrally formed. At this time, by appropriately designing a mold used for injection molding or transfer molding, a concave portion 23a is formed in the outer resin portion 23, and the reflective metal layer 12 is exposed to the outside on the bottom surface of the concave portion 23a. To.

  Next, the LED element 21 is mounted on the mounting surface 11 a of the main body 11 of the lead frame 10. In this case, the LED element 21 is mounted and fixed on the mounting surface 11a (on the reflective metal layer 12) of the main body 11 using solder or die bonding paste (die attach step) (FIG. 6 (c). )).

  Next, the terminal portion 21a of the LED element 21 and the surface of the second portion 26 of the main body portion 11 are electrically connected to each other by the bonding wire 22 (wire bonding step) (FIG. 6D).

  Thereafter, the sealing resin portion 24 is filled in the concave portion 23a of the outer resin portion 23, and the LED element 21 and the bonding wire 22 are sealed by the sealing resin portion 24 (FIG. 6E).

  Next, the outer resin portion 23 between the LED elements 21 is diced to separate the lead frame 10 for each LED element 21 (FIG. 6F). At this time, the lead frame 10 is first placed and fixed on the dicing tape 37, and then the outer resin portion 23 between the LED elements 21 is cut in the vertical direction by a blade 38 made of, for example, a diamond grindstone.

  In this way, the semiconductor device 20 shown in FIGS. 3 and 4 can be obtained (FIG. 6G).

Operational effects of the present embodiment Next, operational effects of the present embodiment will be described. In the semiconductor device 20 according to the present embodiment, as described above, the intermediate intervening layer 15 made of the copper plating layer is provided between the reflective metal layer 12 made of the silver plating layer and the main body portion 11 made of copper or a copper alloy. Provided. A large number of copper oxide pieces 12A are located in the reflective metal layer 12 near the interface L between the reflective metal layer 12 and the intermediate intervening layer 15 and at positions corresponding to the crystal grain boundaries 12a of the reflective metal layer 12. Is formed. As a result, the following effects can be obtained.

  When manufacturing the semiconductor device 20, for example, heat may be applied to the lead frame 10 during die bonding (FIG. 6C) or wire bonding (FIG. 6D). Specifically, during die bonding, heat of about 300 ° C. to 400 ° C. may be applied in the case of solder bonding, for example, and heat of about 150 ° C. to 200 ° C. may be applied in the case of paste connection, for example. In wire bonding, for example, heat of about 150 ° C. to 250 ° C. may be applied.

  Thus, even when the lead frame 10 is heated, the reflective metal layer in the vicinity of the interface L between the reflective metal layer 12 made of a silver plating layer and the intermediate intervening layer 15 made of a copper plating layer as described above. 12, a large number of copper oxide pieces 12 </ b> A are formed at positions corresponding to the crystal grain boundaries 12 a of the reflective metal layer 12. For this reason, since the copper oxide piece 12A functions as a cap for closing the crystal grain boundary 12a, the copper atoms from the intermediate intervening layer 15 do not diffuse into the reflective metal layer 12 and appear on the surface thereof.

  For this reason, the reflection characteristic (reflectance) of the reflective metal layer 12 made of a silver plating layer does not deteriorate.

  Moreover, since copper (Cu) from the intermediate intervening layer 15 is prevented from diffusing to the surface of the reflective metal layer 12, the solder wettability of the surface of the reflective metal layer 12 due to the diffusion of copper (Cu) It is possible to prevent the bonding property from being lowered.

Modifications Each modification of the semiconductor device according to the present embodiment will be described below with reference to FIGS. 11 to 16, the same parts as those in the embodiment shown in FIGS. 3 and 4 are denoted by the same reference numerals, and detailed description thereof is omitted.

(Modification 1)
FIG. 11 is a cross-sectional view showing Modification 1 (SON type) of the semiconductor device. The embodiment shown in FIG. 11 is different in that solder balls or gold bumps 41a and 41b are used as the conductive portions, and the other configuration is substantially the same as the embodiment shown in FIGS. 3 and 4 described above. .

  In the semiconductor device 40 (Modification 1) shown in FIG. 11, the LED element 21 is placed on the placement surface 11 a (the reflective metal layer 12) of the main body 11 of the lead frame 10. In this case, the LED element 21 is placed across the first portion 25 (die pad) and the second portion 26 (lead portion) of the main body 11.

  The LED element 21 is connected to the reflective metal layer 12 of the lead frame 10 by solder balls or gold bumps (conductive portions) 41a and 41b instead of the bonding wires 22 (flip chip method). As shown in FIG. 11, one of the solder balls or gold bumps 41a and 41b is connected to the first portion 25, and the other solder ball or gold bump 41b is connected to the second solder ball or gold bump 41b. Connected to portion 26.

(Modification 2)
FIG. 12 is a cross-sectional view showing Modification 2 (LGA type) of the semiconductor device. The embodiment shown in FIG. 12 is different from the embodiment shown in FIGS. 3 and 4 in the configuration of the substrate 10 and the like.

  In the semiconductor device 50 (Modification 2) shown in FIG. 12, the substrate 10 is provided on the entire surface including the main body 11 having the mounting surface 11 a on which the LED element 21 is mounted and the mounting surface 11 a of the main body 11. The reflective metal layer 12 functions as a reflective layer for reflecting light from the LED element 21.

  An intermediate intervening layer 15 is provided between the reflective metal layer 12 and the main body 11.

  The main body 11 has a first part (die pad) 51 on which the LED element 21 is placed, and a second part (terminal part) 52 spaced from the first part 51. The sealing resin portion 24 is filled between the first portion 51 and the second portion 52, and the first portion 51 and the second portion 52 are electrically insulated from each other.

  A first external terminal 53 is provided on the bottom surface of the first portion 51, and a second external terminal 54 is provided on the bottom surface of the second portion 52. The first external terminal 53 and the second external terminal 54 are respectively exposed outward from the sealing resin portion 24. In addition, in FIG. 12, the main-body part 11 may consist of a structure which laminated | stacked one plating layer or several plating layers.

  In this case, the LED element 21 is placed on the placement surface 11 a of the main body 11 in the first portion 51. Further, the second portion 52 of the substrate 10 and the LED element 21 are electrically connected by a bonding wire (conductive portion) 22. That is, one end of the bonding wire 22 is connected to the terminal portion 21 a of the LED element 21, and the other end of the bonding wire 22 is connected to the surface of the second portion 52.

  On the other hand, the translucent sealing resin portion 24 seals the upper portion of the substrate 10, the LED element 21, and the bonding wire 22.

  In FIG. 12, the outer resin portion 23 is not provided, but is not limited thereto, and the outer resin portion 23 may be provided so as to surround the LED element 21 as in FIGS. 3 and 4.

(Modification 3)
FIG. 13 is a cross-sectional view showing Modification 3 (PLCC type) of the semiconductor device. The embodiment shown in FIG. 13 is different from the embodiment shown in FIGS. 3 and 4 in the configuration of the lead frame 10.

  In the semiconductor device 60 (Modification 3) shown in FIG. 13, the lead frame 10 is provided on the entire surface including the main body 11 having the mounting surface 11 a on which the LED element 21 is mounted and the mounting surface 11 a of the main body 11. And a reflective metal layer 12 that functions as a reflective layer for reflecting the light from the LED element 21.

  An intermediate intervening layer 15 is provided between the reflective metal layer 12 and the main body 11.

  The main body 11 includes a first part (die pad) 61 on which the LED element 21 is placed, a second part (terminal part) 62 and a third part (terminal part) 63 that are separated from the first part 61. And have. The outer resin portion 23 is filled between the first portion 61 and the second portion 62 and between the first portion 61 and the third portion 63. Thereby, the first portion 61 and the second portion 62 are electrically insulated from each other, and the first portion 61 and the third portion 63 are electrically insulated from each other.

  The second portion 62 and the third portion 63 are each curved in a substantially J-shaped cross section. Furthermore, a first outer lead portion 64 is formed at the end of the second portion 62, and a second outer lead portion 65 is formed at the end of the third portion 63. The first outer lead portion 64 and the second outer lead portion 65 are exposed outward from the outer resin portion 23, respectively.

  In this case, the LED element 21 is placed on the placement surface 11 a of the main body 11 in the first portion 61. The LED element 21 is electrically connected to the second portion 62 and the third portion 63 of the main body 11 of the lead frame 10 via bonding wires (conductive portions) 22, respectively.

(Modification 4)
FIG. 14 is a cross-sectional view showing Modification 4 (substrate type) of the semiconductor device. The embodiment shown in FIG. 14 is different from the embodiment shown in FIGS. 3 and 4 in that the substrate 10 is disposed on a non-conductive substrate 74.

  In the semiconductor device 70 (Modification 4) shown in FIG. 14, the substrate 10 is provided on the entire surface including the main body 11 having the mounting surface 11 a on which the LED element 21 is mounted and the mounting surface 11 a of the main body 11. And a reflective metal layer 12 that functions as a reflective layer for reflecting the light from the LED element 21.

  An intermediate intervening layer 15 is provided between the reflective metal layer 12 and the main body 11.

  The main body 11 includes a first portion 71 and a second portion 72 that is separated from the first portion 71. The sealing resin portion 24 is filled between the first portion 71 and the second portion 72, and the first portion 71 and the second portion 72 are electrically insulated from each other.

  In this case, the LED element 21 is placed across the first portion 71 and the second portion 72. The LED element 21 is connected to the reflective metal layer 12 of the substrate 10 by solder balls (conductive portions) 73a and 73b instead of the bonding wires 22 (flip chip method).

  As shown in FIG. 14, among the solder balls 73 a and 73 b, the solder ball 73 a is connected to the first portion 71, and the solder ball 73 b is connected to the second portion 72.

  Incidentally, in FIG. 14, the substrate 10 is disposed on a non-conductive substrate 74. The non-conductive substrate 74 may be an organic substrate or an inorganic substrate. Examples of organic substrates include polyethersulfone (PES), polyethylene naphthalate (PEN), polyamide, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polyether ether ketone, liquid crystal polymer, fluororesin, polycarbonate, and polynorbornene. An organic substrate made of resin, polysulfone, polyarylate, polyamideimide, polyetherimide, thermoplastic polyimide, or the like, or a composite substrate thereof can be given. Moreover, as an inorganic substrate, a glass substrate, a silicon substrate, a ceramic substrate etc. can be mentioned, for example.

  A plurality of through holes 75 are formed in the non-conductive substrate 74. Each through hole 75 is filled with a conductive material 76. The first portion 71 and the second portion 72 of the main body 11 are electrically connected to the first external terminal 77 and the second external terminal 78 via the conductive material 76 in each through hole 75, respectively. It is connected. Examples of the conductive material 76 include a conductive metal such as copper formed in the through hole 75 by plating, or a conductive paste containing conductive particles such as copper particles and silver particles.

  In FIG. 14, the outer resin portion 23 is not provided, but is not limited thereto, and the outer resin portion 23 is provided so as to surround the LED element 21 as in the embodiment shown in FIGS. 3 and 4. May be.

(Modification 5)
FIG. 15 is a cross-sectional view showing Modification 5 (module type) of the semiconductor device. The embodiment shown in FIG. 15 is different in that a plurality of substrates 10 are arranged on one non-conductive substrate 74, and the other configuration is the embodiment shown in FIG. 15 described above (Modification 4). Is almost the same.

  In the semiconductor device 80 (Modification 5) shown in FIG. 15, a plurality of substrates 10 are arranged on one nonconductive substrate 74. Each substrate 10 is provided on the entire surface including the main body 11 having a mounting surface 11 a on which the LED element 21 is mounted and the mounting surface 11 a of the main body 11, and is a reflection for reflecting light from the LED element 21. A reflective metal layer 12 functioning as a layer.

  In addition, in FIG. 15, the same parts as those of the embodiment (Modification 4) shown in FIG.

(Modification 6)
FIG. 16 is a cross-sectional view showing Modification 6 (SON type) of the semiconductor device. The embodiment shown in FIG. 16 is different in that two lead portions (second portion 92 and third portion 93) are provided around the first portion (die pad) 91 of the main body 11. The other structure is substantially the same as the embodiment shown in FIGS. 3 and 4 described above.

  That is, in the semiconductor device 90 (Modification 6) shown in FIG. 16, the main body 11 is around the first part (die pad) 91 on which the LED element 21 is placed and the first part (die pad) 91. And a pair of lead portions (a second portion 92 and a third portion 93) provided at positions facing each other with the first portion 91 interposed therebetween.

  In FIG. 16, the LED element 21 has a pair of terminal portions 21 a, and the pair of terminal portions 21 a are connected to the second portion 92 and the third portion 93 via the bonding wires 22, respectively. Yes.

  Also in the semiconductor devices 40, 50, 60, 70, 80, and 90 (FIGS. 11 to 16) according to the first to sixth modifications described above, substantially the same functions and effects as those of the semiconductor device 20 shown in FIGS. be able to.

DESCRIPTION OF SYMBOLS 10 LED lead frame or board | substrate 11 Main-body part 12 Reflective metal layer 12A Copper oxide piece 12B Metal lid piece 12a Crystal grain boundary 15 Intermediate | middle intervening layer 20, 40, 50, 60, 70, 80, 90 Semiconductor device 21 LED element 22 Bonding wire (conductive part)
23 Outer resin part 24 Sealing resin part L Interface H Hot plate F Furnace

Claims (8)

In an LED lead frame or substrate on which an LED element is placed,
A main body having a mounting surface for mounting the LED element;
A reflective metal layer provided on the mounting surface of the main body and functioning as a reflective layer for reflecting the light from the LED element;
The reflective metal layer comprises silver or a silver alloy;
The main body includes copper or a copper alloy,
An intermediate intervening layer made of copper or a copper alloy is provided between the reflective metal layer and the main body ,
A lead frame or substrate for LEDs, wherein a copper oxide piece is formed in a position corresponding to a crystal grain boundary of the reflective metal layer in the reflective metal layer. In an LED lead frame or substrate on which an LED element is placed,
A main body having a mounting surface for mounting the LED element;
A reflective metal layer provided on the mounting surface of the main body and functioning as a reflective layer for reflecting the light from the LED element;
The reflective metal layer comprises silver or a silver alloy;
The main body includes copper or a copper alloy,
A lead frame or substrate for LEDs, wherein a copper oxide piece is formed in a position corresponding to a crystal grain boundary of the reflective metal layer in the reflective metal layer. 3. The LED lead frame according to claim 1 , wherein a metal lid piece is provided on a surface of the reflective metal layer at a position corresponding to a crystal grain boundary of the reflective metal layer. Or substrate.   4. The lead frame or substrate for LED according to claim 3, wherein the metal cover piece is made of indium, palladium, rhodium, tin, or an oxide of these metals. An LED lead frame or substrate having a main body including a mounting surface on which the LED element is mounted;
LED elements mounted on the mounting surface of the main body of the lead frame or the substrate,
A conductive portion that electrically connects the lead frame or substrate and the LED element;
A sealing resin portion that seals the LED element and the conductive portion;
A reflective metal layer that functions as a reflective layer for reflecting light from the LED element is provided on the mounting surface of the LED lead frame or the main body of the substrate,
The reflective metal layer comprises silver or a silver alloy;
The main body includes copper or a copper alloy,
An intermediate intervening layer made of copper or a copper alloy is provided between the reflective metal layer and the main body, and a piece of copper oxide in the reflective metal layer at a position corresponding to the crystal grain boundary of the reflective metal layer. A semiconductor device characterized in that is formed. An LED lead frame or substrate having a main body including a mounting surface on which the LED element is mounted;
LED elements mounted on the mounting surface of the main body of the lead frame or the substrate,
A conductive portion that electrically connects the lead frame or substrate and the LED element;
A sealing resin portion that seals the LED element and the conductive portion;
A reflective metal layer that functions as a reflective layer for reflecting light from the LED element is provided on the mounting surface of the LED lead frame or the main body of the substrate,
The reflective metal layer comprises silver or a silver alloy;
The main body includes copper or a copper alloy,
A semiconductor device, wherein a copper oxide piece is formed in a position corresponding to a crystal grain boundary of a reflective metal layer in the reflective metal layer. 7. The semiconductor device according to claim 5 , wherein a metal lid piece is provided at a position corresponding to a crystal grain boundary of the reflective metal layer on the surface of the reflective metal layer.   8. The semiconductor device according to claim 7, wherein the metal cover piece is made of indium, palladium, rhodium, tin, or an oxide of these metals.

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