JP6180024B2 - Single crystal manufacturing apparatus and single crystal manufacturing method - Google Patents

Description

  The present invention relates to a single crystal manufacturing apparatus for manufacturing an aluminum nitride (AlN) single crystal or a silicon carbide (SiC) single crystal by a sublimation recrystallization method (improved Rayleigh method), and manufacturing of a single crystal using the manufacturing apparatus. It is about the method.

  In a manufacturing apparatus for manufacturing an aluminum nitride single crystal or a silicon carbide single crystal by a sublimation recrystallization method, the surface temperature of the crucible is measured using a radiation thermometer in order to control the temperature of the crucible (for example, Patent Document 1). reference). Moreover, in order to stabilize temperature conditions, it is a common practice to cover the crucible with a heat insulating material. And in order to ensure the visual path of a radiation thermometer, the said heat insulating material is formed with opening.

JP 2011-132079 A

  When the seed crystal is enlarged, the temperature difference in the plane direction of the seed crystal increases due to the opening of the heat insulating material. Therefore, thermal stress is generated in the seed crystal, and a crack may occur in the grown single crystal.

  The problem to be solved by the present invention is to provide a single crystal manufacturing apparatus and a single crystal manufacturing method capable of suppressing the occurrence of cracks in the single crystal.

[1] A single crystal production apparatus according to the present invention is a single crystal production apparatus for producing a single crystal by a sublimation recrystallization method, which contains a raw material and holds a seed crystal so as to face the raw material, , A heat insulating material having at least a first lid that covers an upper portion of the crucible, and a second lid laminated on the first lid, and a first formed on the first lid. Temperature measuring means for measuring the temperature of the upper part of the crucible through the opening of the second lid and the second opening formed in the second lid portion, the first opening is has a more than two-thirds of the inner diameter of the outer diameter of the seed crystal, said second opening, said has have a smaller inner diameter than the inner diameter of the first opening, the upper and the first of the crucible A space is formed between the cover and the lid, and the entire upper surface of the crucible is exposed to the space .

[ 2 ] In the above invention, the center of the first opening, the center of the second opening, and the center of the seed crystal held in the crucible are arranged on substantially the same axis. It may be.

[ 3 ] In the above invention, the single crystal manufacturing apparatus includes: a crystal growth furnace that houses the crucible; and a heating unit that is provided outside the crystal growth furnace and heats the crucible, and the temperature The measuring means may be arranged outside the crystal growth furnace.

[ 4 ] The method for producing a single crystal according to the present invention includes a crucible that contains a raw material and holds a seed crystal so as to face the raw material, a first lid that covers an upper portion of the crucible, and the first A heat insulating material having a second lid laminated on the lid, a first opening formed in the first lid, and a second opening formed in the second lid And a temperature measuring means for measuring the temperature of the upper part of the crucible through the single crystal manufacturing method using the manufacturing apparatus, wherein the first opening has an outer diameter of the seed crystal. The inner diameter of the second opening is smaller than the inner diameter of the first opening, and a space is provided between the upper portion of the crucible and the first lid portion. There is formed, the entire upper surface of the crucible is exposed to the space, by sublimating the raw material by heating the crucible, the seed Characterized in that a single crystal is grown on Akiraue.

  In the present invention, the second lid portion is laminated on the first lid portion of the heat insulating material, the first and second openings are formed in the first and second lid portions, respectively, and the inner diameter of the first opening is Since it is 2/3 or more of the outer diameter of the seed crystal and the inner diameter of the second opening is smaller than the inner diameter of the first opening, the surface temperature in the seed crystal is suppressed while suppressing heat radiation to the outside. The distribution can be made uniform. For this reason, the thermal stress which arises in a seed crystal can be relieved, and generation | occurrence | production of the crack to the grown single crystal can be suppressed.

FIG. 1 is a schematic configuration diagram of an apparatus for producing an aluminum nitride single crystal according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing the crucible and the heat insulating material in the embodiment of the present invention. FIG. 3 is a cross-sectional view showing a modification of the crucible in the embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  1 is a schematic configuration diagram of an apparatus for producing an aluminum nitride single crystal in the present embodiment, FIG. 2 is a sectional view showing a crucible and a heat insulating material in the present embodiment, and FIG. 3 is a sectional view showing a modification of the crucible in the present embodiment. It is.

  The single crystal manufacturing apparatus 1 in this embodiment is an apparatus for manufacturing an aluminum nitride single crystal 6 by a sublimation recrystallization method (an improved Rayleigh method). Specifically, the raw material 2 is heated and sublimated in the high temperature region, and the sublimation gas is recondensed on the seed crystal 5 provided in the low temperature region, thereby producing the aluminum nitride single crystal 6.

  As shown in FIG. 1, this single crystal manufacturing apparatus 1 contains a raw material 2 and holds a seed crystal 5, a heat insulating material 20 covering the crucible 10, and a crucible 10 covered with the heat insulating material 20. , A gas supply device 40 for supplying nitrogen gas into the crystal growth furnace 30, a decompression device 50 for depressurizing the crystal growth furnace 30, and an induction disposed outside the crystal growth furnace 30. A coil 60 and first and second thermometers 71 and 72 for measuring the temperature of the crucible 10 are provided.

  The crucible 10 has the container main body 11 and the cover body 12 as shown in FIG.1 and FIG.2.

  The container main body 11 has a cylindrical tube portion 111 and a bottom portion 112 that closes the lower end of the tube portion 111, and the tube portion 111 has an upper opening 113 at the upper end thereof. The raw material 2 is accommodated in the container body 11. Specific examples of the raw material 2 include, for example, aluminum nitride powder.

  The lid 12 has a disk shape having an outer diameter larger than the outer diameter of the seed crystal 5, and is placed on the container body 11 so as to cover the upper opening 113. A seed crystal 5 is attached to the lower surface of the lid 12 via an adhesive, and the seed crystal 5 faces the raw material 2 accommodated in the container body 11. The lid 12 is merely placed on the container main body 11 and the crucible 10 is introduced into the crystal growth furnace 30 because the crucible 10 has a semi-sealed structure in which fluid can easily enter and exit. The nitrogen gas etc. thus made can flow into the crucible 10.

  Specific examples of the seed crystal 5 include, for example, a SiC single crystal, an AlN single crystal, an AlN / SiC single crystal (a single crystal obtained by hetero-growing an AlN single crystal film having a thickness of about 200 to 500 [μm] on the SiC single crystal. Examples thereof include a plate-like or disc-like substrate composed of a crystal). Moreover, as a specific example of the adhesive that bonds the seed crystal 5 to the lid 12, for example, a high temperature adhesive mainly composed of resin, inorganic compound ceramics, or graphite can be exemplified.

  In addition, as shown in FIG. 3, the cover body 12 may be provided with the two cover members 13 and 14, and the above-mentioned adhesive agent becomes unnecessary in this case. Specifically, the first lid member 13 is a ring-shaped member having a through opening 131 having an inner diameter smaller than the outer diameter of the seed crystal 5, and the first lid member 13 is an upper part of the container body 11. It is placed on the container body 11 so as to cover the opening 113. The seed crystal 5 is placed on the first lid member 13 so as to close the through opening 131, and the outer peripheral portion of the seed crystal 5 is held by the first lid member 13. On the other hand, the second lid member 14 is a disk-shaped member having an outer diameter larger than the outer diameter of the seed crystal 5, and is placed on the seed crystal 5 held by the first lid member 13. The seed crystal 5 is sandwiched between the first lid member 13 and the second lid member 14.

  Returning to FIG. 2, the crucible 10 is made of a material having heat resistance during the crystal growth of an aluminum nitride single crystal (about 2000 ° C.). Specifically, the container body 11 and the lid 22 of the crucible 10 are made of graphite, boron nitride, aluminum nitride, gallium nitride, silicon carbide, silicon nitride, molybdenum, tungsten, tantalum, molybdenum carbide, zirconium carbide, tungsten carbide, It is made of at least one material selected from the group consisting of tantalum carbide, molybdenum nitride, zirconium nitride, tungsten nitride, and tantalum nitride.

  As shown in FIG. 2, a heat insulating material 20 is provided around the crucible 10 in order to suppress heat radiation to the outside. As a specific example of the heat insulating material 20, for example, a molded heat insulating material using carbon fiber can be exemplified.

The heat insulating material 20 has a cylindrical portion 21, a bottom portion 22, and a lid portion 23 and surrounds the entire surface of the crucible 10. Specifically, the cylindrical portion 21 and the bottom portion 22 of the heat insulating material 20 directly cover the cylindrical portion 111 and the bottom portion 112 of the container body 11 of the crucible 10. On the other hand, the lid portion 23 of the heat insulating material 20 covers the lid body 12 of the crucible 10 apart from each other, and a space S ₁ is formed between the lid portion 23 of the heat insulating material 20 and the lid body 12 of the crucible 10. Yes.

By providing such a space S ₁ , the heat radiation of the seed crystal 5 through the first and second openings 241 and 251 can be made uniform. That is, when there is no space between the lid portion of the heat insulating material and the lid body of the crucible, a part of the lid body is exposed from the opening of the heat insulating material, whereas the other part of the lid body The heat insulating material comes into close contact with the surface, and heat dissipation is greatly hindered in the unexposed portion. Therefore, a heat radiation difference occurs between the exposed portion and the non-exposed portion of the lid, and the temperature difference in the plane direction of the seed crystal increases. In contrast, in the present embodiment, by providing the space S ₁ between the lid 12 of the lid 23 and the crucible 10 of the heat insulating material 20, it is released from the entire top surface of the lid 12 by the flow of gas Therefore, the heat radiation of the seed crystal 5 can be made uniform.

A circular opening 221 for securing a visual path of a first thermometer 71 described later is formed in the bottom 22 of the heat insulating material 20. The opening 221 has an inner diameter D ₃ (for example, about 10 [mm]) as small as possible in order to suppress heat radiation to the outside.

The lid portion 23 in the present embodiment is composed of a first lid portion 24 that covers the lid portion 12 of the crucible 10 and a second lid portion 25 that is laminated on the first lid portion 24. It has a structure. The lids 24 and 25 are also formed with circular openings 241 and 251 for securing a visual path of a second thermometer 72 described later. The first opening 241 formed in the first lid 24 has an inner diameter D ₁ that is 2/3 or more of the outer diameter D ₀ of the seed crystal 5 (D ₁ ≧ 2/3 × D ₀ ). . In contrast, the second opening 251 formed in the second lid portion 25 has an inner diameter D ₂ that is relatively smaller than the inner diameter D ₁ of the first opening 241 (D ₂ <D ₁ ), The inner diameter D2 of the _second opening 251 is preferably as small as possible (for example, about 10 [mm]) in order to suppress heat radiation to the outside.

Thus, in the present embodiment, the second lid portion 25 is stacked on the first lid portion 24, and the inner diameter D2 of the _second opening 251 formed in the second lid portion 25 is the first lid portion 25. Since it is relatively smaller than the inner diameter D _{1 of the} opening 241 (D ₂ <D ₁ ), it is possible to make the temperature distribution in the plane direction in the seed crystal 5 uniform while suppressing heat dissipation to the outside. . Therefore, the thermal stress generated in seed crystal 5 can be relaxed and the occurrence of cracks in aluminum nitride single crystal 6 can be suppressed.

In particular, in the present embodiment, since the inner diameter D ₁ of the first opening 241 formed in the first lid portion 24 of the heat insulating material 20 is 2/3 or more of the outer diameter D ₀ of the seed crystal 5 ( D ₁ ≧ 2/3 × D ₀ ), and the temperature distribution in the plane direction of the seed crystal 5 can be further uniformed.

  The first opening 241 is disposed on the same axis CL as the center of the seed crystal 5 held by the lid 12 of the crucible 10. Similarly, the second opening 251 is also disposed on the same axis CL as the center of the seed crystal 5 held by the lid 12 of the crucible 10. As described above, the centers of the first and second openings 241 and 251 substantially coincide with the center of the seed crystal 5, so that the temperature distribution in the plane direction of the seed crystal 5 is further uniformized. Can do.

As shown in FIG. 1, the crucible 10 covered with the heat insulating material 20 is fixed in the crystal growth furnace 30 through a fixing means (not shown). The crystal growth furnace 30 is composed of, for example, a double-structured transparent quartz tube, and a gas inlet 31 is provided in the upper part thereof, and a gas outlet 32 is provided in the lower part thereof. A gas supply device 40 capable of supplying an inert gas such as nitrogen (N ₂ ) gas is connected to the gas inlet 31. On the other hand, a pressure reducing device 50 such as a vacuum pump is connected to the gas discharge port 32 via a pressure adjusting valve (not shown). By driving the gas supply device 40 and the decompression device 50, the atmosphere in the crystal growth furnace 30 can be adjusted to a predetermined pressure.

  An induction coil 60 is disposed around the crystal growth furnace 30. The induction coil 60 surrounds the crucible 10 in the crystal growth furnace 30, and when the induction coil 60 is energized with a high-frequency current, the crucible 10 self-heats, whereby the raw material 2 and the single crystal 5 have a desired temperature. To be heated. Instead of the induction coil 60, a heating means using resistance heating or infrared heating may be used.

  Two thermometers 71 and 72 are arranged outside the crystal growth furnace 30. Specific examples of the first and second thermometers 71 and 72 include a radiation thermometer. The radiation thermometers 71 and 72 detect the temperature of the crucible 10 by measuring the intensity of infrared light or visible light emitted from the crucible 10 through the transparent wall surface of the crystal growth furnace 30.

  The first thermometer 71 is arranged to face the bottom surface of the container body 11 of the crucible 10 in the crystal growth furnace 30 (lower part of the crucible 10) through an opening 221 formed in the lower part of the heat insulating material 20. The temperature of the lower part of the crucible 10 can be measured. On the other hand, the second thermometer 72 is opposed to the upper surface (the upper part of the crucible 10) of the crucible 10 in the crystal growth furnace 30 through the first and second openings 241 and 251 of the heat insulating material 20. It is possible to measure the temperature of the upper part of the crucible 10. That is, in this embodiment, the temperature of the raw material 2 is measured by the first thermometer 71 and the temperature of the seed crystal 5 is measured by the second thermometer 72.

  Next, the manufacturing method of the aluminum nitride single crystal 6 using the single crystal manufacturing apparatus 1 demonstrated above is demonstrated.

  First, the raw material 2 such as aluminum nitride powder is set in the container body 11 of the crucible 10. Next, the lid body 12 to which the seed crystal 5 is attached is placed on the container body 11. Thereby, the raw material 2 is accommodated in the crucible 10 and the seed crystal 5 is held in the crucible 10 so as to face the raw material 2.

  Next, after covering the crucible 10 with the heat insulating material 20 and installing the crucible 10 in the crystal growth furnace 30, the decompression device 50 is driven to remove the atmosphere in the crystal growth furnace 30 through the gas discharge port 32. The inside of the crystal growth furnace 30 is evacuated.

  Next, the gas supply device 40 is driven to introduce nitrogen gas into the crystal growth furnace 30 through the gas inlet 31 to increase the pressure in the crystal growth furnace 30 to about 700 [torr]. Next, the raw material 2 and the seed crystal 5 are heated by energizing the induction coil 60 with a high frequency current to cause the crucible 10 to generate heat.

  At this time, the upper and lower temperatures of the crucible 10 are measured by the first and second thermometers 71 and 72, respectively, and the lower temperature of the crucible 10 (that is, the temperature of the raw material 2) is 1800 [° C.]. The temperature of the crucible 10 is increased by the induction coil 60 until the upper temperature of the crucible 10 (that is, the temperature of the seed crystal 5) becomes 1700 [° C.] to 2200 [° C.].

  When the temperature of the crucible 10 reaches the above set temperature, the inside of the crystal growth furnace 30 is reduced to 100 [torr] to 600 [torr] by the decompression device 50. Due to this reduced pressure, the growth of the aluminum nitride single crystal 6 starts. Specifically, as shown in the following formulas (1) and (2), the sublimation gas generated from the raw material 2 is seed crystal due to the temperature gradient set between the upper and lower parts of the crucible 10 described above. Then, it is recrystallized on the seed crystal 5 to grow an aluminum nitride single crystal 6.

2AlN (s) → 2Al (g) + N ₂ (g) (1)
2Al (g) + N ₂ (g) → 2AlN (s) (2)

At this time, in this embodiment, the second lid 25 is stacked on the first lid 24, and the inner diameter D2 of the _second opening 251 formed in the second lid 25 is the first opening. Since it is relatively smaller than the inner diameter D _{1 of} 241 (D ₂ <D ₁ ), it is possible to make the temperature distribution in the plane direction of the seed crystal 5 uniform while suppressing heat dissipation to the outside. Therefore, the thermal stress generated in seed crystal 5 can be relaxed and the occurrence of cracks in aluminum nitride single crystal 6 can be suppressed.

In particular, in the present embodiment, since the inner diameter D ₁ of the first opening 241 formed in the first lid portion 24 of the heat insulating material 20 is 2/3 or more of the outer diameter D ₀ of the seed crystal 5 ( D ₁ ≧ 2/3 × D ₀ ), and the temperature difference in the plane direction of the seed crystal 5 can be within 5 [° C.].

  When the growth of the aluminum nitride single crystal 6 is stopped, nitrogen gas is supplied into the crystal growth furnace 30 from the gas inlet 31 to increase the pressure in the crystal growth furnace 30 to about 700 [torr], and then the induction coil The energization to 60 is stopped and the raw material 2 and the seed crystal 5 are naturally cooled to room temperature.

  The embodiment described above is described for facilitating the understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

  For example, a double crucible structure in which the crucible 10 is accommodated in the second crucible may be employed, or a triple crucible structure in which the crucible 10 is accommodated in the second and third crucibles may be employed.

  In the above-described embodiment, an apparatus and method for manufacturing an aluminum nitride (AlN) single crystal has been described. However, the present invention is not particularly limited thereto, and the present invention is applied to an apparatus and method for manufacturing a silicon carbide (SiC) single crystal. You may apply.

  Below, the effect of the present invention was confirmed by examples and comparative examples that further embody the present invention. The following examples and comparative examples are for confirming the effect of suppressing the occurrence of cracks in the seed crystal in the above-described embodiment.

<Example 1>
In Example 1, the aluminum nitride single crystal 6 was grown on the seed crystal 5 by using the manufacturing apparatus 1 shown in FIGS. 1 and 2 described in the embodiment.

  As the container body 11 of the crucible 10, a bottomed cylindrical body made of graphite having an outer diameter of 80 [mm], an inner diameter of 60 [mm], and a depth of 60 [mm] was used. Inside the container body 11, a sintered body of aluminum nitride having a diameter of 60 [mm] and a thickness of 5 [mm] was accommodated as the raw material 2.

In addition, a graphite disk having a diameter of 80 [mm] and a thickness [ 10 mm] was used as the lid 12 of the crucible 10. A disc-shaped 4H—SiC single crystal (diameter 50 [mm], thickness 600 [μm]) having a plane orientation (0001) was attached to the lower surface of the lid 12 as the seed crystal 5.

As the heat insulating material 20, a molded heat insulating material having a thickness of 10 mm (R6510 manufactured by SGL Carbon Japan Co., Ltd.) is used, and the thickness of each of the first lid portion 24 and the second lid portion 25 is 10 mm. ]. An opening 221 having a diameter of 10 [mm] was formed in the bottom 22 of the heat insulating material 20. In addition, a first opening 241 having a diameter of 35 [mm] is formed in the first lid portion 24 of the heat insulating material 20, and a second having a diameter of 10 [mm] is formed in the second lid portion 25 of the heat insulating material 20. An opening 251 was formed. A space S ₁ between the lid portion 23 of the heat insulating material 20 and the lid body 12 of the crucible 10 (interval between the lid portion 23 of the heat insulating material 20 and the lid body 12 of the crucible 10) was set to 10 mm. .

The crucible 10 covered with the heat insulating material 20 is installed in the crystal growth furnace 30, the decompression device 50 is driven to remove the atmosphere in the crystal growth furnace 30 through the gas discharge port 32, and the crystal growth furnace 30 The pressure was once reduced to 5 × 10 ⁻⁶ [torr].

  Next, after the inside of the crystal growth furnace 30 is boosted to about 700 [torr] by supplying nitrogen gas from the gas supply device 40, a high-frequency current is passed through the induction coil 60 to cause the crucible 10 to generate heat. The raw material 2 and the seed crystal 5 were heated until the temperature became 2000 [° C.] and the lower temperature of the crucible 10 became 2100 [° C.]. When the temperature of the crucible 10 reached the above set temperature, the growth of the aluminum nitride single crystal 6 was started by reducing the pressure in the crystal growth furnace 30 to 100 [torr].

  After 500 hours have elapsed from the start of the growth, the pressure in the crystal growth furnace 30 is increased to 700 [torr], and then the raw material 2 and the seed crystal 5 are cooled to room temperature by natural cooling to complete the crystal growth. I let you.

  The aluminum nitride single crystal 6 obtained as described above was taken out from the single crystal production apparatus 1 and visually confirmed whether or not the single crystal 6 was cracked using an optical microscope. In Example 1, as shown in Table 1, no cracks occurred in the aluminum nitride single crystal 6. In the column of “Crack” in Table 1, “◯” indicates that no crack was generated in the single crystal, whereas “X” indicates that a crack was generated in the single crystal. .

<Examples 2 to 6>
In Examples 2-6, the diameter D1 of the _1st opening 241 of the 1st cover part 24 of the heat insulating material 20 is set to 40 [mm], 45 [mm], 50 [mm], 55 [mm], 60, respectively. An aluminum nitride single crystal was produced under the same conditions as in Example 1 except that it was set to [mm], and the presence or absence of cracks in the single crystal was confirmed. As shown in Table 1, also in Examples 2 to 6, no crack was generated in the aluminum nitride single crystal.

<Comparative Examples 1-5>
In Comparative Examples 1 to 5, the diameter D1 of the _first opening 241 of the first lid 24 of the heat insulating material 20 is 10 [mm], 15 [mm], 20 [mm], 25 [mm], and 30, respectively. An aluminum nitride single crystal was produced under the same conditions as in Example 1 except that it was set to [mm], and the presence or absence of cracks in the single crystal was confirmed. As shown in Table 1, in Comparative Examples 1 to 5, cracks occurred in the aluminum nitride single crystal.

As described above, the inner diameter _{D 1} of the first opening 241 of the insulating member 20 and two-thirds or more of the outer diameter _{D 0} of the seed crystal 5, and an inner diameter _{D 2} of the second opening 251 is a first opening In Examples 1 to 6, which were relatively smaller than the inner diameter D _{1 of} 241, the occurrence of cracks in the aluminum nitride single crystal could be suppressed. In contrast, in Comparative Examples 1 to 5 was less than 2/3 of the outer diameter D ₀ of the seed crystal 5 an inner diameter D ₁ of the first opening 241 of the insulating material 20, cracks occurred in the aluminum nitride single crystal.

DESCRIPTION OF SYMBOLS 1 ... Single crystal manufacturing apparatus 2 ... Raw material 5 ... Seed crystal 6 ... Aluminum nitride single crystal 10 ... Crucible 11 ... Container main body 111 ... Tube part 112 ... Bottom part 113 ... Top opening 12 ... Cover body 13 ... 1st cover member 131 ... Through-opening 14 ... second lid member 20 ... heat insulating material 21 ... cylindrical part 22 ... bottom part 221 ... opening 23 ... lid part 24 ... first lid part 241 ... first opening 25 ... second lid part 251 ... first 2. Opening 30 ... Crystal growth furnace 31 ... Gas inlet 32 ... Gas outlet 40 ... Gas supply device 50 ... Decompression device 60 ... Induction coil 71, 72 ... Thermometer

Claims (4)

A single crystal manufacturing apparatus for manufacturing a single crystal by a sublimation recrystallization method,
A crucible for containing a raw material and holding a seed crystal so as to face the raw material;
A heat insulating material having at least a first lid that covers an upper part of the crucible and a second lid laminated on the first lid;
Temperature measuring means for measuring the temperature of the upper part of the crucible through a first opening formed in the first lid part and a second opening formed in the second lid part; With
The first opening has an inner diameter that is 2/3 or more of the outer diameter of the seed crystal,
It said second opening is to have a first inner diameter smaller than the inner diameter of the opening,
A space is formed between the upper part of the crucible and the first lid part,
A single crystal manufacturing apparatus, wherein the entire upper surface of the crucible is exposed to the space . The single crystal manufacturing apparatus according to claim 1 ,
The center of the first opening, the center of the second opening, and the center of the seed crystal held in the crucible are arranged on substantially the same axis. Single crystal manufacturing equipment. The single crystal manufacturing apparatus according to claim 1 or 2 ,
A crystal growth furnace containing the crucible;
Provided outside the crystal growth furnace, and heating means for heating the crucible,
The single-crystal manufacturing apparatus, wherein the temperature measuring means is arranged outside the crystal growth furnace. A crucible for containing a raw material and holding a seed crystal so as to face the raw material;
A heat insulating material having a first lid that covers the top of the crucible and a second lid laminated on the first lid;
Temperature measuring means for measuring the temperature of the upper part of the crucible through a first opening formed in the first lid part and a second opening formed in the second lid part; A single crystal manufacturing method using a manufacturing apparatus comprising:
The first opening has an inner diameter that is 2/3 or more of the outer diameter of the seed crystal,
The second opening has an inner diameter smaller than the inner diameter of the first opening;
A space is formed between the upper part of the crucible and the first lid part,
The entire upper surface of the crucible is exposed in the space;
A method for producing a single crystal, wherein the raw material is sublimated by heating the crucible to grow a single crystal on the seed crystal.

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