JP6165346B2 - 側方放射ルミネッセンス構造体及び当該ルミネッセンス構造体を含む照明デバイス - Google Patents
側方放射ルミネッセンス構造体及び当該ルミネッセンス構造体を含む照明デバイス Download PDFInfo
- Publication number
- JP6165346B2 JP6165346B2 JP2016544816A JP2016544816A JP6165346B2 JP 6165346 B2 JP6165346 B2 JP 6165346B2 JP 2016544816 A JP2016544816 A JP 2016544816A JP 2016544816 A JP2016544816 A JP 2016544816A JP 6165346 B2 JP6165346 B2 JP 6165346B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- wavelength
- conversion layer
- wavelength conversion
- nanoparticles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004020 luminiscence type Methods 0.000 title description 13
- 239000002105 nanoparticle Substances 0.000 claims description 74
- 238000006243 chemical reaction Methods 0.000 claims description 68
- 230000005855 radiation Effects 0.000 claims description 30
- 238000005286 illumination Methods 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 16
- 238000010168 coupling process Methods 0.000 claims description 16
- 238000005859 coupling reaction Methods 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 16
- 239000002082 metal nanoparticle Substances 0.000 claims description 8
- 239000012780 transparent material Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 22
- 239000002245 particle Substances 0.000 description 11
- 239000007787 solid Substances 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 7
- 239000004926 polymethyl methacrylate Substances 0.000 description 7
- 238000005424 photoluminescence Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- -1 rare earth ion Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 3
- 241000208818 Helianthus Species 0.000 description 2
- 235000003222 Helianthus annuus Nutrition 0.000 description 2
- 240000003380 Passiflora rubra Species 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910009815 Ti3O5 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/61—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Planar Illumination Modules (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Optical Filters (AREA)
- Led Device Packages (AREA)
Description
λ/(n1+n2)<Λ<λ/(1+n2)
であるように選択され、ここで、格子距離Λ(φ)は、方位角φにおける格子ベクトル(即ち、長さpを有する格子ベクトルの方位投影)として定義され、n1は、波長変換層の屈折率であり、n2は、ライトガイド層の屈折率であり、λは、第2の波長の光の波長である。この条件は、光の放射が、すべての方位角について又は少なくとも大部分の方位角について、臨界角よりも大きいことを確実にする所定の格子の格子間隔を選択するために使用される。
λ/Λ=|±n1sinθi±n2| (1)
から推定される。ここで、Λは、長さp及び方位角φの格子ベクトルに関連付けられる格子距離であり、n1は、その中で放射が行われる媒体(例えばライトガイド又はライトガイドが使用されない場合は空気)の屈折率であり、n2は、表面格子(レーリー)モード用の媒体(例えば波長変換層)の屈折率である。
λ/(n1+n2)<Λ<λ/1+n2) (2)
の範囲内であるべきということを示す。
Claims (22)
- 少なくとも第1の波長の光を受け取り、受け取った前記第1の波長の光を、少なくとも第2の波長の光に変換する波長変換層と、
前記波長変換層と接触している又は前記波長変換層に近接している平面に配置されるナノ粒子の配列と、
を含む照明構造体であって、
前記配列の少なくとも一部は、少なくとも1つの格子周期によって特徴付けられる格子を形成し、
前記格子周期は、動作時に、
前記ナノ粒子の少なくとも一部の共鳴が、前記波長変換層内の前記第2の波長における1つ以上の集団共鳴モードに回折結合され、
前記照明構造体によって、側方放射の放射パターンが生成されるように選択され、
前記放射パターンは、前記配列平面に対して1つ以上の大きい傾斜角方向において、1つ以上の小さい傾斜角方向における電界強度よりも大きい電界強度を含む、照明構造体。 - 前記1つ以上の集団共鳴モードは、前記ナノ粒子の配列に関連付けられる1つ以上の表面格子共鳴モードを含み、前記少なくとも1つの格子周期は、前記1つ以上の表面格子共鳴モードのうちの少なくとも1つが、前記第2の波長の光と共鳴するように選択される、請求項1に記載の照明構造体。
- 前記1つ以上の集団共鳴モードは、前記波長変換層に関連付けられる1つ以上の導波モードを含み、前記少なくとも1つの格子周期は、前記1つ以上の導波モードのうちの少なくとも1つが、前記第2の波長の光と共鳴するように選択される、請求項1又は2に記載の照明構造体。
- 前記波長変換層の少なくとも一部は、前記波長変換層内に強い導波モードを提供するために、低指数層に接触し、前記低指数層の屈折率は、前記波長変換層の屈折率よりも小さい、請求項3に記載の照明構造体。
- 前記波長変換層の厚さは、1つ以上の大きい傾斜角方向における前記電界強度が、前記第2の波長の光と共鳴する前記1つ以上の導波モードのうちの前記少なくとも1つによって高められるように選択される、請求項3又は4に記載の照明構造体。
- 前記少なくとも1つの格子周期は、前記波長変換層がライトガイドに接触している場合に、前記1つ以上の大きい傾斜角方向の少なくとも一部が、前記ライトガイド内の全反射のための臨界角よりも大きいように選択される、請求項1乃至5の何れか一項に記載の照明構造体。
- 前記少なくとも1つの格子周期は、
λ/(n1+n2)<Λ<λ/(1+n2)
であるように選択され、ここで、格子距離Λ(φ)は、方位角φにおける格子ベクトルとして定義され、n1は、前記波長変換層の屈折率であり、n2は、前記ライトガイド層の屈折率であり、λは、前記第2の波長の光の波長である、請求項6に記載の照明構造体。 - 前記格子は、1つ以上の対称性を有するように配置される、請求項1乃至7の何れか一項に記載の照明構造体。
- 前記1つ以上の対称性は、回転対称性、鏡映対称性、並進対称性、らせん対称性、スケール対称性及びフラクタル対称性の少なくとも1つを含む、請求項8に記載の照明構造体。
- 前記格子は、非周期的な傾斜によって形成される、請求項1乃至8に記載の照明構造体。
- 前記非周期的な傾斜は、ペンローズ格子を形成する、請求項10に記載の照明構造体。
- 前記ナノ粒子の少なくとも一部は、金属ナノ粒子又は誘電体ナノ粒子である、請求項1乃至11の何れか一項に記載の照明構造体。
- 前記ナノ粒子の少なくとも一部は、角錐(台)又は円錐(台)の形状を有し、前記角錐台は、100〜300nmの範囲内の底部側長さと、30〜250nmの範囲内の頂部側長さとを有し、前記円錐台は、100〜300nmの範囲内の底面直径と、30〜250nmの範囲内の頂面直径と、50〜400nmの範囲内の高さとを有する、請求項1乃至12の何れか一項に記載の照明構造体。
- 前記波長変換層の厚さは、400と4000nmとの間で選択される、請求項1乃至13の何れか一項に記載の照明構造体。
- 前記波長変換層の厚さは、1300と1900nmとの間で選択される、請求項14に記載の照明構造体。
- 少なくとも第1の波長の光を放射する少なくとも1つの光源と、
請求項1乃至15の何れか一項に記載の1つ以上の照明構造体と、
を含む、照明デバイス。 - 大きい傾斜角を有する前記光の少なくとも一部が、ライトガイド内に注入されるように、前記照明構造体に光学的に結合される前記ライトガイドを更に含み、前記ライトガイドと前記照明構造体との間に、光学結合層が配置され、前記光学結合層の屈折率は、前記ライトガイドの屈折指数と空気の屈折指数との間で選択される、請求項16に記載の照明デバイス。
- 前記照明構造体の側方放射光の少なくとも一部を、実質的に平行な光ビームに変換する1つ以上の反射部材を更に含む、請求項16又は17に記載の照明デバイス。
- 前記1つ以上の反射部材は、角度−領域変換器を形成する、請求項18に記載の照明デバイス。
- 前記1つ以上の反射部材は、複合放物面集光器又はその等価物を形成する、請求項18に記載の照明デバイス。
- 前記ライトガイドの少なくとも一部は、頂面、底面、及び、1つ以上の側面を含む透明シートとして構成され、前記頂面及び/又は前記底面は、前記ライトガイドから光を出力させる1つ以上の光抽出構造体を含み、或いは、前記1つ以上の側面のうちの1つの少なくとも一部は、透明材料でできた角度−領域変換器として構成される少なくとも1つの光抽出構造体に結合される、請求項17に記載の照明デバイス。
- 前記角度−領域変換器における角度−領域の変換は、全反射によって達成される、請求項21に記載の照明デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14188783 | 2014-10-14 | ||
EP14188783.6 | 2014-10-14 | ||
PCT/EP2015/072501 WO2016058828A1 (en) | 2014-10-14 | 2015-09-30 | Sideward emitting luminescent structures and illumination device comprising such luminescent structures |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017505516A JP2017505516A (ja) | 2017-02-16 |
JP6165346B2 true JP6165346B2 (ja) | 2017-07-19 |
Family
ID=51743293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016544816A Expired - Fee Related JP6165346B2 (ja) | 2014-10-14 | 2015-09-30 | 側方放射ルミネッセンス構造体及び当該ルミネッセンス構造体を含む照明デバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US9972755B2 (ja) |
EP (1) | EP3055890B1 (ja) |
JP (1) | JP6165346B2 (ja) |
CN (1) | CN105793642B (ja) |
WO (1) | WO2016058828A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109314162A (zh) * | 2016-06-02 | 2019-02-05 | 飞利浦照明控股有限公司 | 基于fret耦合发射器的等离子白色光源 |
CN106402697B (zh) * | 2016-08-30 | 2018-07-17 | 上海坤雪光电科技有限公司 | 一种可控光的导光体以及制成的照明发射器 |
JP7289424B2 (ja) * | 2017-05-12 | 2023-06-12 | オーストラリアン ナショナル ユニバーシティ | 暗視装置、その製造方法、および暗視を実行するための方法 |
US10698293B2 (en) * | 2017-05-12 | 2020-06-30 | The Australian National University | Frequency conversion of electromagnetic radiation |
EP3900057A1 (en) * | 2018-12-21 | 2021-10-27 | Lumileds Holding B.V. | Color uniformity in converted light emitting diode using nanostructures |
US11322669B2 (en) | 2018-12-21 | 2022-05-03 | Lumileds Llc | Color uniformity in converted light emitting diode using nano-structures |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
FR2933781A1 (fr) | 2008-07-11 | 2010-01-15 | Thales Sa | Extracteur de photons a cristaux photoniques pour micro-sources optiques a fort rendement |
US20100126566A1 (en) * | 2008-11-21 | 2010-05-27 | Lightwave Power, Inc. | Surface plasmon wavelength converter |
TW201114070A (en) * | 2009-10-15 | 2011-04-16 | Aurotek Corp | Light-emitting device |
CN102792772B (zh) * | 2010-03-10 | 2015-09-09 | 日本电气株式会社 | 发光元件、光源装置和投影显示装置 |
JP5776689B2 (ja) * | 2010-05-14 | 2015-09-09 | 日本電気株式会社 | 表示素子、表示器及び投射型表示装置 |
US20110303940A1 (en) * | 2010-06-14 | 2011-12-15 | Hyo Jin Lee | Light emitting device package using quantum dot, illumination apparatus and display apparatus |
US20120018755A1 (en) | 2010-07-23 | 2012-01-26 | The Regents Of The University Of California | Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices |
KR101208174B1 (ko) * | 2010-07-28 | 2012-12-04 | 엘지이노텍 주식회사 | 광학시트 및 이를 포함하는 발광소자패키지 |
KR101710212B1 (ko) * | 2010-12-28 | 2017-02-24 | 엘지전자 주식회사 | 광소자 및 이를 이용한 발광 다이오드 패키지, 백라이트 장치 |
EP2477240A1 (en) * | 2011-01-18 | 2012-07-18 | Koninklijke Philips Electronics N.V. | Illumination device |
US10444412B2 (en) * | 2013-08-06 | 2019-10-15 | Lumileds Llc | Solid state illumination device having plasmonic antenna array for anisotropic emission |
EP3031086B1 (en) * | 2013-08-06 | 2019-11-27 | Lumileds Holding B.V. | Enhanced emission from plasmonic coupled emitters for solid state lighting |
EP3149783B8 (en) * | 2014-05-27 | 2018-09-05 | Lumileds Holding B.V. | Spatial positioning of photon emitters in a plasmonic illumination device |
-
2015
- 2015-09-30 WO PCT/EP2015/072501 patent/WO2016058828A1/en active Application Filing
- 2015-09-30 JP JP2016544816A patent/JP6165346B2/ja not_active Expired - Fee Related
- 2015-09-30 CN CN201580002931.8A patent/CN105793642B/zh not_active Expired - Fee Related
- 2015-09-30 US US15/517,186 patent/US9972755B2/en not_active Expired - Fee Related
- 2015-09-30 EP EP15771114.4A patent/EP3055890B1/en not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
JP2017505516A (ja) | 2017-02-16 |
EP3055890A1 (en) | 2016-08-17 |
WO2016058828A1 (en) | 2016-04-21 |
US9972755B2 (en) | 2018-05-15 |
CN105793642A (zh) | 2016-07-20 |
EP3055890B1 (en) | 2017-03-29 |
CN105793642B (zh) | 2018-06-12 |
US20170309797A1 (en) | 2017-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6165346B2 (ja) | 側方放射ルミネッセンス構造体及び当該ルミネッセンス構造体を含む照明デバイス | |
KR102187847B1 (ko) | 이방성 방출을 위한 플라즈모닉 안테나 어레이를 갖는 고체 상태 조명 디바이스 | |
KR102406473B1 (ko) | 플라즈몬 조명 장치에서의 광자 이미터의 공간 포지셔닝 | |
TWI553273B (zh) | 照明裝置 | |
JP6111960B2 (ja) | 蛍光光源装置 | |
TW201924485A (zh) | 用於準直發光二極體之光發射之奈米結構的超材料及超表面 | |
TWI651873B (zh) | 基於非輻射式能量轉移之固態照明裝置 | |
TW201513408A (zh) | 用於固態發光之自電漿耦合發射器之增強發射 | |
JP2016036008A (ja) | 発光素子および発光装置 | |
Kamakura et al. | Enhanced photoluminescence and directional white-light generation by plasmonic array | |
KR20150001749A (ko) | 광학장치 | |
JP2017040818A (ja) | 発光素子 | |
JP5351551B2 (ja) | 発光装置 | |
WO2015129221A1 (ja) | 発光素子および発光装置 | |
JP2015088418A (ja) | 有機el素子並びにそれを備えた画像表示装置及び照明装置 | |
WO2015180970A1 (en) | Plasmonic-based illumination device | |
KR101121521B1 (ko) | 형광판 | |
US10539730B2 (en) | Light source with diffractive outcoupling | |
Wang et al. | All-dielectric nanostructures for high-efficient angular emission from polarized LEDs |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20161201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170120 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170522 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170620 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6165346 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |