JP6154987B2 - Semiconductor device - Google Patents

Description

This invention relates to semiconductor equipment.

Conventionally, in a semiconductor device in which a semiconductor chip is sealed with a mold resin, there is a problem of how to efficiently dissipate heat generated from the semiconductor chip. In particular, in recent years when semiconductor chips have become smaller and higher in performance, the problem of heat dissipation has become more important.
As a semiconductor device to cope with such a problem, for example, in Patent Document 1, a metal plate is bonded to the surface opposite to the semiconductor chip of the die pad (lead frame) on which the semiconductor chip is mounted via an insulating layer, Proposals have been made to actively cool a semiconductor chip by using heat radiation from a metal plate.

JP 2002-151619 A

  In the above-described conventional semiconductor device, a heating press is employed as a means for bonding the insulating layer and the die pad. When the insulating layer is bonded to the die pad, the heating press is used as a means for bonding the insulating layer and the die pad. The insulating layer must be pressed against the die pad under a predetermined pressure (for example, 180 ° C.). At this time, the insulating layer is deformed and cannot maintain the predetermined thickness, and is thinned or damaged. As a result, desired electrical insulation characteristics may not be obtained.

The present invention is, in consideration of the above situation, the electrical insulation properties of the insulating layer without impairing, and an object thereof to provide a semiconductor equipment that good heat dissipation is obtained.

In order to solve this problem, a semiconductor device of the present invention is formed in a plate-like die pad having conductivity, a semiconductor chip fixed to one surface of the die pad, and having a conductivity and a strip shape. One end of the lead such that one end in the longitudinal direction is electrically connected to the semiconductor chip, a heat dissipation member joined to the other surface of the die pad, and at least the other end of the lead is exposed. A mold resin that seals the die pad and the semiconductor chip, and the heat dissipation member is a metal foil that is bonded to the other surface of the die pad via a bonding material, and a heat dissipation part that dissipates heat generated from the semiconductor chip. , and have a dielectric layer interposed between said metal foil and the heat radiating portion, the metal foil, so as to come into contact with the other surface the whole area of the die pad, in plan view the same shape of the die pad Made is characterized in that is.

According to the semiconductor device, when the heat dissipation member is bonded to the other surface of the die pad, it is bonded via the bonding material between them, so that the insulating layer interposed in the heat dissipation member is described in the prior art. Such an unnecessary pressing force is applied, so that the insulating layer is not deformed to be thinner than a predetermined thickness or damaged. Therefore, desired electrical insulation characteristics can be obtained for the insulating layer, and as a result, a semiconductor device with stable quality can be obtained.
Here, the bonding material for bonding the die pad and the heat radiating member refers to a bonding material that melts only its own metal such as solder or brazing material without melting the base material. Such a bonding material does not require a pressing force for bonding.
Furthermore, in this case, since the metal foil and die pad to be joined have the same shape in plan view, alignment when joining these members is facilitated.
The function of the metal foil is to join the heat radiating member to the die pad through a bonding material, and it is necessary and sufficient if it is formed in the same shape as the planar shape of the die pad. Incidentally, if a metal foil wider than the planar shape of the die pad is used, an electrical short circuit between adjacent die pads becomes a problem. Further, if a metal foil narrower than the planar shape of the die pad is used, there arises a problem that high bonding strength with the die pad cannot be obtained.

  Further, according to the semiconductor device, heat generated from the semiconductor chip is directly dissipated through the die pad, the metal foil, the insulating layer, and the heat dissipation part. Therefore, good heat dissipation is ensured. In addition, since the die pad and the metal foil are joined with a joining material such as solder, it is higher by the difference in thermal conductivity between the joining material and the adhesive than when joining using a resin adhesive. Heat transferability can be obtained, and in this respect as well, good heat dissipation of the semiconductor chip can be ensured.

And in the said semiconductor device, the said thermal radiation part is from the metal plate joined on the opposite side to the said metal foil of the said insulating layer, and the radiation fin joined on the opposite side to the said insulating layer of this metal plate. It is preferable to become.
In this configuration, since the heat dissipating fins are provided, high heat dissipation can be obtained by actively dissipating heat generated from the semiconductor chip. Therefore, it is suitable for use in a semiconductor device having a relatively large calorific value.

In the semiconductor device, the heat radiating portion may be a heat radiating fin bonded to the opposite side of the insulating layer to the metal foil.
In this case, since the heat dissipating fins are provided, it is common with the former that high heat dissipation can be obtained by actively dissipating heat generated from the semiconductor chip. Here, in addition to this, since there is no metal plate on the metal foil side of the radiating fin, higher heat dissipation can be obtained and the configuration can be simplified.

In the semiconductor device, the heat radiating portion may be made of a metal plate bonded to the opposite side of the insulating layer from the metal foil.
In this case, since a simple metal plate is used as the heat radiating portion, the heat radiation amount is relatively small, but the processing for manufacturing is facilitated, and the semiconductor device can be made compact. It is suitable for use in a semiconductor device with a relatively small calorific value.

In the semiconductor device, it is preferable that a plurality of the leads are arranged with a space therebetween, and the other end portions of the leads protrude in the same direction.
In this case, since the other end portions of the leads protrude in the same direction, a so-called through-hole mounting type semiconductor device is obtained. Compared to the surface mount type, the stress can be released to the circuit board side through the leads, so that an advantage that it is difficult to be detached from the circuit board is obtained.

Furthermore, in the semiconductor device, the insulating layer is preferably made of polyimide.
In this case, it is possible to ensure a high withstand voltage even when the insulating layer is set to be thinner than when the insulating layer is formed of an epoxy resin. Moreover, since the thickness of the insulating layer can be set thin, the heat from the semiconductor chip can be efficiently transferred from the metal foil to the heat radiating portion, and the heat of the semiconductor chip can be released more efficiently.

  According to the present invention, good heat dissipation can be obtained without impairing the electrical insulation characteristics of the insulating layer.

1 is a perspective view showing a semiconductor device according to a first embodiment of the present invention. 1 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present invention. It is sectional drawing which shows the semiconductor device which concerns on 2nd Embodiment of this invention.

[First Embodiment]
The first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a perspective view showing a semiconductor device according to the first embodiment, and FIG. 2 is a cross-sectional view showing the semiconductor device according to the first embodiment.
As shown in FIG. 1, in the semiconductor device 1 according to this embodiment, a plurality of leads 30 protrude from the semiconductor device 1 in the same direction, and the ends of the leads 30 are inserted into holes of a circuit board (not shown). This is a so-called through-hole mounting type semiconductor device that is fixed in a fixed manner.

  This semiconductor device 1 includes a plurality of die pads 10 formed in a conductive plate shape, and an upper surface 10a of the die pad 10 (one surface of the die pad in the claims: the vertical direction in this embodiment has the form shown in FIG. A plurality of semiconductor chips 20 fixed to a reference) and having a conductive and strip-like shape and having one end in the longitudinal direction thereof electrically connected to the semiconductor chip 20 (in the illustrated example, 4). The lead 30 (30A, 30B), the lower surface 10b of the die pad 10 (other surface of the die pad in the claims), the die pad 10, the semiconductor chip 20, and a part of the lead 30 are sealed. And a mold resin 50 to be stopped.

The heat radiating member 40 includes a metal foil 41 bonded to the die pad 10 and a lead extension 11 described later via a bonding material made of solder or brazing material, a heat radiating portion 42 for radiating heat generated from the semiconductor chip 20, and a heat radiating portion. 42 and an insulating layer 43 interposed between the metal foil 41 and the metal foil 41.
The metal foil 41 is formed by forming a metal material having a high thermal conductivity such as a copper foil in a thin film shape, and the thickness thereof is set to, for example, 18 μm or more and less than 300 μm.
The heat dissipating part 42 includes a metal plate 45 bonded to the opposite side of the metal foil of the insulating layer 43 and a heat radiating fin 46 bonded to the opposite side of the insulating layer 43 of the metal plate 45.
The metal plate 45 is made of a metal material having high thermal conductivity such as aluminum (Al) or copper (Cu), and the thickness thereof is set to 18 μm or more and 300 μm or less, for example.
The radiating fins 46 are made of a material similar to that of the metal plate 45, for example, a metal material having high thermal conductivity such as aluminum (Al) or copper (Cu), and are joined to the metal plate 45. It consists of a plate-like substrate portion 46A and a plurality of fins 46B erected in parallel on one side of the substrate portion 46A (see FIG. 1).

  The insulating layer 43 may be made of, for example, an epoxy resin or an epoxy resin with a filler. However, in consideration of setting the thickness of the insulating layer 43 to be thinner, it is preferably made of, for example, polyimide (PI). . In addition, when the insulating layer 43 consists of polyimide, the thickness can be set to 25 micrometers or more and 150 micrometers or less, for example.

The shapes of the insulating layer 43 and the metal plate 45 in plan view are set to be equal to each other. That is, the insulating layer 43 and the metal plate 45 are formed to have the same shape as the lower surface of the mold resin 50 that seals the semiconductor chip and the like.
The metal foil 41 is formed in the same shape as the insulating layer 43 and the metal plate 45, and once overlapped with and integrally joined to them, it is individually attached to each die pad 10 and the lead extension portion 11 in a later process. Divided to be joined. That is, one of the separately formed metal foils 41 is formed in the same shape as the plan view of these die pads 10 so as to be bonded to the entire lower surface 10b of each die pad 10. The other metal foil 41 formed in a divided manner is formed in the same shape as the plan view shape of the lead extension portion 11 so as to be joined to the entire lower surface of the lead extension portion 11.

  Furthermore, the planar view shape of the radiating fin 46 from the semiconductor chip 20 side is formed so as to protrude outward from the insulating layer 43 and the metal plate 45 so as to be larger than the planar view shape. . The shape and size of the fin 46B and the specific shape of the fin 46B are appropriately determined according to the amount of heat released from the semiconductor chip 20 to be radiated.

  The die pad 10 is made of a metal material having high thermal conductivity such as copper, for example, and is bonded to the metal foil 41 forming the upper surface in FIG. It is electrically connected and fixed on the upper surface of the heat radiating member 40 in an overlapping manner.

  The semiconductor chip 20 is a semiconductor element that generates heat when energized, such as a diode or a transistor, and is formed in a rectangular plate shape in plan view and has electrode pads on both the upper and lower surfaces thereof. The lower surface of the semiconductor chip 20 is bonded to the upper surface of the die pad 10 by soldering so that the semiconductor chip 20 is overlaid on the upper surface of the die pad 10 and is electrically connected to the die pad 10.

In addition, one end of the connection plate 21 is joined to the electrode pad formed on the upper surface of the semiconductor chip 20 via solder, and some (two in this embodiment) of the plurality of semiconductor chips 20 are on the upper side. The other end of the connection plate 21 extending from the electrode pad is joined to another die pad 10 different from the die pad 10 to which the semiconductor chip 20 is fixed via solder. Thereby, the semiconductor chip 20 is also electrically connected to these other die pads 10. Some of the other semiconductor chips 20 (two in this embodiment) are joined by soldering the other end of the connection plate 21 extending from the upper electrode pad to the upper surface of the lead extension 11. The lead extension 11 is electrically connected.
Here, like the die pad 10 and the lead 30, the lead extension portion 11 is configured by forming a metal material having a high thermal conductivity, such as copper, in a plate shape.

Similar to the die pad 10, each lead 30 is configured by forming a metal material having a high thermal conductivity, such as copper, in a strip shape. One end portion 31 in the longitudinal direction of each lead 30 is a portion embedded in a mold resin 50 described later, and is electrically connected to the semiconductor chip 20. In addition, the one end part 31 of each lead | read | reed 30 is distribute | arranged mutually spaced along the surface parallel to the surface where the die pad 10 exists.
On the other hand, the other end portion 32 of each lead 30 is a portion protruding to the outside from the side surface of the mold resin 50. For example, the lead 32 is inserted into a hole formed in the circuit board and joined by soldering in this state. Electrically connected to the substrate. Further, the tips of the leads 30 are aligned at the same length so as to be inserted along the holes of the circuit board. Note that the protruding lengths of these leads may be different as necessary.

The plurality of leads 30 are roughly classified into a first lead 30A electrically connected to the die pad 10 and a second lead 30B electrically connected to the lead extension portion 11. That is, the one end portion 31 of the first lead 30A is bent downward and then connected to the die pad 10 and electrically connected. In the present embodiment, the first lead 30A and the die pad 10 are integrally formed. Therefore, the first lead 30 </ b> A is electrically connected to the semiconductor chip 20 through the die pad 10.
On the other hand, the one end 31 of the second lead 30B is bent downward and then connected to the lead extension 11 to be electrically connected. In the present embodiment, the second lead 30B and the lead extension 11 are integrally formed. Therefore, the second lead 30 </ b> B is electrically connected to the semiconductor chip 20 via the lead extension portion 11 and the connection plate 21.

  The mold resin 50 has the die pad 10, the semiconductor chip 20, one end 31 of the lead 30, and the lead extension 11 embedded therein, and the other end 32 of the lead 30 protrudes outside the mold resin 50. It is formed as follows. The mold resin 50 embeds the upper surface 40a of the heat radiating member 40 so that the lower surface 40b side of the heat radiating member 40 is exposed.

Next, an example of a manufacturing method of the semiconductor device 1 having the above configuration will be described.
When manufacturing the semiconductor device 1, first, a solder paste is applied to each region corresponding to the bonding surface of the die pad 10 with the semiconductor chip 20.

Next, the semiconductor chip 20 is placed on the portion of the die pad 10 where the solder paste is applied. Then, a solder paste is applied on the upper electrode pad of the semiconductor chip 20 placed. In addition, a solder paste is applied to a region corresponding to the joint surface between the die pad 10 and the lead extension 11 and the connection plate 21. Next, the connection plate is mounted on the die pad 10 or the like so that one end and the other end of the connection plate 21 match the electrode pad on the semiconductor chip 20, the die pad 10, and the solder paste application surface on the lead extension portion 11. To do.
In this state, by performing reflow, the semiconductor chip 20 and the connection plate 21 that electrically connects the semiconductor chip 20 are joined to the die pad 10 and the lead extension portion 11 via solder, respectively. Thereby, the electrical connection regarding the semiconductor chip 20 is completed.

Further, one of the heat radiating members 40 composed of the metal foil 41, the insulating layer 43, and the metal plate 45, which are integrally formed in advance and joined together in advance, at the same time as or before and after the electrical connection step. Etching is performed so that only the region corresponding to the die pad 10 and the lead extension 11 is left in the metal foil 41 among the layered members of the portion.
After the electrical connection and the etching process are finished, a solder or brazing material bonding material is applied onto the remaining metal foil 41, and the die pad 10 and the lead extension 11 are mounted on the bonding material application surface of the metal foil 41. In this state, for example, reflow is performed again to heat up to a required temperature. The reflow temperature at this time is assumed to be lower than the reflow temperature when the semiconductor chip 20 is electrically connected. This is to maintain the quality of the electrical connection location relating to the semiconductor chip 20.
As a result, the die pad 10 and the lead extension 11 are bonded onto a part of the layered member of the heat dissipation member 40 including the metal foil 41, the insulating layer 43, and the metal plate 45.

At this time, a bonding material such as solder applied to the lower surfaces of the die pad 10 and the lead extension 11 is melted and penetrates into the gap between the die pad 10 and the lead extension 11 and the metal foil 41. Thereafter, when these molten bonding materials are cooled and solidified, the die pad 10 and the lead extension 11 and the metal foil 41 are bonded.
Thereafter, with the other end portion 32 of the lead 30 exposed, a portion electrically connected to the semiconductor chip 20, that is, one end portion 31 of the lead 30, the upper surface of the die pad 10, the semiconductor chip 20 and the connection plate 21 are connected. Each is sealed with a mold resin 50.
The radiation fins 46 may be fixed to the metal plate 45 after sealing with the mold resin 50, or before the metal foil 41 is joined to the lower surfaces of the die pad 10 and the lead extension 11 by reflow. You may carry out by the process of.
Through the above steps, the semiconductor device 1 shown in FIGS. 1 and 2 can be manufactured.

  According to the semiconductor device 1 of the present embodiment, when the heat radiating member 40 is joined to the lower surface 10b of the die pad 10, it is joined via a joining material such as solder between them, so that it is interposed in the heat radiating member 40. Unnecessary pressing force is applied to the insulating layer 43 to deform the insulating layer 43 so that the insulating layer 43 does not become thinner than a predetermined thickness or is not damaged. Therefore, desired electrical insulation characteristics can be obtained for the insulating layer 43, and as a result, a semiconductor device with stable quality can be obtained.

  Further, according to the semiconductor device 1, heat generated from the semiconductor chip 20 is directly dissipated through the die pad 10 and the lead extension 11, the metal foil 41, the insulating layer 43, the metal plate 45, and the heat radiation fins 46. Therefore, good heat dissipation is ensured. In addition, since the die pad 10 and the metal foil 41 are joined with a joining material such as solder, the difference in thermal conductivity between the joining material and the adhesive is larger than when joining using a resin adhesive. As a result, a high heat transfer property can be obtained. Also in this respect, a good heat dissipation property of the semiconductor chip 20 can be obtained.

  In the semiconductor device 1 according to the present embodiment, the die pad 10 and the lead extension 11 are electrically connected to the semiconductor chip 20 and the lead 30 to form a current path of the semiconductor device 1. Since the insulating layer 43 is provided between the metal plate 45, the current path of the semiconductor device 1 can be prevented from being short-circuited to the circuit board via the heat dissipation member 40.

  Further, in the semiconductor device 1, the heat radiating portion 42 is constituted by the metal plate 45 and the heat radiating fin 46, and the planar shape of the radiating fin 46 is larger than the planar shape of the insulating layer 43 and the metal plate 45. Since one is used, the heat generated from the semiconductor chip 20 can be dissipated more positively. Therefore, it is suitable for use in a semiconductor device having a relatively large calorific value.

  In the semiconductor device 1 of the present embodiment, a so-called through-hole mounting type in which a plurality of the leads 30 are spaced apart from each other and the other ends 32 of the leads 30 protrude in the same direction. Therefore, since the stress can be relieved to the circuit board side via the lead 30 as compared with the surface mount type semiconductor device, there is an advantage that it is difficult to be detached from the circuit board.

Further, in the semiconductor device 1 of the present embodiment, the shape of the metal foil 41 is formed in the same shape as the plan view shape of the die pad 10 and the like so as to be bonded to the entire lower surface of the die pad 10 and the lead extension portion 11 in advance. Therefore, alignment when joining these members becomes easy.
Incidentally, when the metal foil 41 wider than the planar view shape of the die pad 10 or the like is used, a short circuit between adjacent die pads 10 or the like becomes a problem. Further, when a die pad 10 or the like that is narrower than the planar view shape is used, there arises a problem that high bonding strength with the die pad 10 or the like cannot be obtained.

  Further, in the semiconductor device, when polyimide is used as the insulating layer 43, it is possible to ensure a high withstand voltage even when the insulating layer is set thinner than when the insulating layer is formed of an epoxy resin. Become. Further, since the thickness of the insulating layer can be set thin, the heat from the semiconductor chip can be efficiently transferred from the conductive layer to the metal plate, and the heat of the semiconductor chip can be released more efficiently.

Further, in the method for manufacturing the semiconductor device 1 of the present embodiment, when the heat dissipation member 40 on the lower surface of the die pad 10 or the lead extension 11 is bonded, a bonding material such as solder is provided between the lower surface of the die pad and the heat dissipation member 40. In the state of interposing, the joining portion and its periphery are heated to a predetermined temperature, and only the joining material is melted without melting the die pad 10 and the metal foil 41 of the heat radiating member, and the die pad 10 and the heat radiating member. 40 is joined, so that no pressing force is applied at the time of joining, so that the insulating layer 43 in the heat radiating member 40 is not deformed to be thinner than a predetermined thickness or damaged.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a sectional view showing a semiconductor device according to the second embodiment of the present invention.
The semiconductor device 2 according to the second embodiment is different from the semiconductor device 1 according to the first embodiment only in the partial configuration of the heat dissipation member. In the present embodiment, the same components as those of the semiconductor device 1 of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

In the semiconductor device 2 of the present embodiment, the heat radiation fins 46 are directly joined to the insulating layer 43 without interposing a metal plate as the heat radiation portion 61 of the heat radiation member 60.
The metal foil 41, the insulating layer 43, and the heat radiating fins 46 constituting the heat radiating member 60 are the same as those used in the first embodiment.
In addition, when the strength of the layered member including the metal foil 41 and the insulating layer 43 is insufficient, a thicker metal foil 41 may be used than the metal foil 41 used in the first embodiment.

According to the semiconductor device 2 of the present embodiment, the same effects as those of the first embodiment can be obtained.
Furthermore, in the semiconductor device 2 of this embodiment, since the heat radiating member 60 has a configuration in which the heat radiating fins 46 are directly joined to the insulating layer 43 without having a metal plate, higher heat dissipation can be obtained and the weight can be reduced. In addition, the configuration can be simplified.

The details of the present invention have been described above with reference to the first and second embodiments. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. Is possible.
For example, in the above-described embodiment, the present invention is applied to the through-hole mounting type semiconductor devices 1 and 2. However, the present invention is not limited to this, and the present invention can also be applied to a surface mounting type semiconductor device. is there.

In the first embodiment, the heat radiating portion 42 of the heat radiating member 40 is constituted by the metal plate 45 and the heat radiating fin 46, and in the second embodiment, the heat radiating portion 61 is constituted by only the heat radiating fin 46. Instead, the heat radiating portion may be constituted only by a metal plate.
In this case, since the heat dissipation part is composed of a simple metal plate, the heat dissipation amount to dissipate the heat from the semiconductor chip is relatively small, but the processing for manufacturing becomes easy and the device is made compact. it can. It is suitable for use in a semiconductor device with a relatively small calorific value.

In the first embodiment, the metal foil 41 of the heat radiating member 40 is bonded to the die pad 10 and the lead extension 11 respectively. However, the present invention is not limited to this, and the lead extension 11 is not provided. In this case, only the die pad 10 may be bonded to the metal foil 41.
In each of the first and second embodiments, the die pad 10 and the lead 30 and the lead extension 11 and the lead 30 are integrally formed. However, the present invention is not limited to this, and they are formed by separate members. In such a case, they may be electrically connected.

  Moreover, in the said embodiment, although it was set as the structure provided with the three die pads 10 and the four semiconductor chips 20, it is not restricted to this, Even if there is one die pad and a semiconductor chip, or multiple other than 3, 4 The number of die pads and the like may be appropriately set as necessary.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 10 Die pad 10a Upper surface (one surface) of die pad
10b Die pad underside (other side)
DESCRIPTION OF SYMBOLS 11 Lead extension part 20 Semiconductor chip 21 Connection board 30 Lead 30A First lead 30B Second lead 31 One end part 32 Lead other end part 40, 60 Heat radiation member 41 Metal foil 42, 61 Heat radiation part 43 Insulation layer 45 Metal plate 46 Radiation fin 50 Mold resin

Claims (2)

A plate-shaped die pad having conductivity;
A semiconductor chip fixed to one surface of the die pad;
A lead having a conductivity and formed in a strip shape, one end of which is longitudinally connected to the semiconductor chip, integrated with the die pad ;
A heat dissipation member bonded to the other surface of the die pad;
A mold resin for sealing the one end of the lead, the die pad and the semiconductor chip so that at least the other end of the lead is exposed;
The heat dissipating member is interposed between a metal foil bonded to the other surface of the die pad via a bonding material, a heat dissipating part for radiating heat generated from the semiconductor chip, and interposed between the heat dissipating part and the metal foil , Having a flat insulating layer;
The metal foil is formed in the same shape as the planar shape of the die pad so as to be bonded to the entire other surface of the die pad,
The heat dissipating part comprises a metal plate bonded to the opposite side of the metal foil of the insulating layer, and a heat radiating fin bonded to the opposite side of the insulating layer of the metal plate,
The radiating fin is extended outward from the insulating layer and the metal plate so that a planar view shape of the radiating fin from the semiconductor chip side is larger than a planar view shape of the insulating layer and the metal plate. It is formed so that
The joining surface of the heat radiating fin, which is joined to the metal plate, and the side surface of the metal plate are not embedded by the mold resin ,
The shapes of the insulating layer and the metal plate in plan view are equal to each other, at least a part of one surface of the insulating layer is embedded with the mold resin, and the side surface of the insulating layer is not embedded with the mold resin,
The lead is bent downward, the bent portion is positioned in the mold resin, one end side is connected to the die pad, and the other end side is arranged along a plane parallel to the surface on which the die pad exists. wherein a that. The semiconductor device according to claim 1, wherein shapes of the mold resin, the insulating layer, and the metal plate in plan view are equal to each other.

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