JP6154862B2 - 画像センサ構造 - Google Patents
画像センサ構造 Download PDFInfo
- Publication number
- JP6154862B2 JP6154862B2 JP2015174498A JP2015174498A JP6154862B2 JP 6154862 B2 JP6154862 B2 JP 6154862B2 JP 2015174498 A JP2015174498 A JP 2015174498A JP 2015174498 A JP2015174498 A JP 2015174498A JP 6154862 B2 JP6154862 B2 JP 6154862B2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- width
- image sensor
- sensor structure
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010410 layer Substances 0.000 claims description 153
- 239000002184 metal Substances 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 50
- 239000011241 protective layer Substances 0.000 claims description 43
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000013461 design Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
10’・・・従来の画像センサ構造
12、52、120、1200・・・基板
14、54、140、1400・・・感知領域
16、16’、56、160、1600・・・第1金属層
18、18’、58、180、1800・・・(パターン化された)保護層
20、60、200、2000・・・光電変換ユニット
22、62、220、2200・・・カラーフィルター(パターン)
24、64、240、2400・・・マイクロレンズ
26、66、260、2600・・・第2の金属層
28、28’、68、280、2800・・・パッド(ボンディングパッド)
30、30’、70、300、3000・・・(周囲)サブスクライブライン
50・・・基板構造
72・・・フォトレジスト層
74・・・第1の平坦化層
76・・・第2の平坦化層
78・・・エッチングプロセス
1201、5201・・・基板の第1面
1202、5202・・・基板の第2面
7201・・・フォトレジスト層の表面
A1、A1’ ・・・第1の金属層の露出領域
D1・・・第1の金属層の露出領域の第1部分の第1の幅
D2・・・第1の金属層の露出領域の第2部分の第2の幅
D3・・・第1の金属層の露出領域の第3部分の第3の幅
D4・・・第1の金属層の露出領域の第4部分の第4の幅
D1、D2、D3、D4・・・第1の金属層の露出領域の幅
d1、d2、d3、d4・・・保護層とボンディングパッドとの間の距離
L・・・感知領域から第2の金属層までの最短水平距離
P1・・・第1の金属層の露出領域の第1部分
P2・・・第1の金属層の露出領域の第2部分
P3・・・第1の金属層の露出領域の第3部分
P4・・・第1の金属層の露出領域の第4部分
S1・・・保護層の第1側
S2・・・保護層の第2側
S3・・・保護層の第3側
S4・・・保護層の第4側
Claims (10)
- 画像センサ構造であって、
第1面および第2面を有し、感知領域を有する基板と、
前記基板の前記第1面上に形成され、前記感知領域を囲む第1の金属層と、
前記基板の前記第1面上に形成され、前記感知領域と前記第1の金属層の一部とを覆い、前記第1の金属層の露出領域を露出する保護層とを含み、
前記露出領域は、第1の幅を有する第1部分、第2の幅を有する第2部分、第3の幅を有する第3部分、および第4の幅を有する第4部分を含み、
前記第1部分の前記第1の幅、前記第2部分の前記第2の幅、前記第3部分の前記第3の幅、および前記第4部分の前記第4の幅は、それぞれ35μmより大きい画像センサ構造。 - 前記基板の第2面の下方に形成され、基板構造に含まれる第2の金属層を更に有し、
前記第2の金属層は平面視で前記第1の金属層を囲み、
前記感知領域から前記第2の金属層までの最短水平距離が定義されている請求項1に記載の画像センサ構造。 - 前記感知領域から前記第2の金属層までの最短水平距離の半分の距離は、前記第1の金属層の前記露出領域の前記第1部分の前記第1の幅、前記第2部分の前記第2の幅、前記第3部分の前記第3の幅、および前記第4部分の前記第4の幅よりも大きい請求項2に記載の画像センサ構造。
- 前記第1の金属層の前記露出領域の前記第1部分と前記第3部分は、前記保護層によって分離され、前記第1の金属層の前記露出領域の前記第2部分と前記第4部分は、前記保護層によって分離される請求項1に記載の画像センサ構造。
- 前記第1部分は、前記第1の金属層の前記露出領域の前記第2部分と前記第4部分に接続され、前記第3部分は、前記第1の金属層の前記露出領域の前記第2部分と前記第4部分に接続される請求項1に記載の画像センサ構造。
- 前記保護層は、第1側、第2側、第3側、および第4側を有し、前記第1の金属層の前記露出領域の前記第1部分、前記第2部分、前記第3部分、および前記第4部分にそれぞれ対応している請求項1に記載の画像センサ構造。
- 第1面と第2面を有し、感知領域を含む基板を提供するステップ、
第1の金属層を前記基板の前記第1面上に形成し、前記感知領域を囲むステップ、および
保護層を前記基板の前記第1面上に形成し、前記感知領域と前記第1の金属層の一部を覆い、前記第1の金属層の露出領域を露出させるステップを含み、
前記露出領域は、
第1の幅を有する第1部分、第2の幅を有する第2部分、第3の幅を有する第3部分、および第4の幅を有する第4部分を含み、
前記第1部分の第1の幅、前記第2部分の前記第2の幅、前記第3部分の前記第3の幅、および前記第4部分の前記第4の幅は、それぞれ35μmより大きい、画像センサ構造を製造する方法。 - 第2の金属層を、平面視で前記第1の金属層を囲うように、前記基板の前記第2面下の基板構造に形成し、フォトレジスト層を十分な厚さになるまで周囲サブスクライブラインに配置された複数のパッド上に充填し、前記パッドと前記サブスクライブラインをエッチングするエッチングプロセスを行うステップを更に含む請求項7に記載の画像センサ構造を製造する方法。
- 第1の平坦化層を前記基板のフォトレジスト層、前記第1の金属層、および前記第1面上にコンフォーマルに形成し、カラーフィルターパターンを前記感知領域内の前記第1の平坦化層上にコーティングするステップを更に含む請求項8に記載の画像センサ構造を製造する方法。
- 複数のマイクロレンズを、第2の平坦化層の下方にあるカラーフィルターパターンに対応して、前記第1の平坦化層と前記カラーフィルターパターン上にコンフォーマルに形成された第2の平坦化層上に形成するステップを更に含み、前記保護層は、前記第2の平坦化層上に形成され、前記マイクロレンズと前記第1の金属層の一部を覆い、前記保護層によって覆われていない前記第1の金属層の一部を露出する請求項9に記載の画像センサ構造を製造する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/660,284 | 2015-03-17 | ||
US14/660,284 US9679941B2 (en) | 2015-03-17 | 2015-03-17 | Image-sensor structures |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016174138A JP2016174138A (ja) | 2016-09-29 |
JP6154862B2 true JP6154862B2 (ja) | 2017-06-28 |
Family
ID=56923801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015174498A Active JP6154862B2 (ja) | 2015-03-17 | 2015-09-04 | 画像センサ構造 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9679941B2 (ja) |
JP (1) | JP6154862B2 (ja) |
CN (1) | CN105990381B (ja) |
TW (1) | TWI550843B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102444235B1 (ko) * | 2015-08-13 | 2022-09-16 | 삼성전자주식회사 | 자기 쉴딩층을 구비한 mram 소자와 반도체 패키지, 및 그들의 제조방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0744260B2 (ja) * | 1988-07-15 | 1995-05-15 | 凸版印刷株式会社 | 固体撮像装置の製造方法 |
US6821810B1 (en) * | 2000-08-07 | 2004-11-23 | Taiwan Semiconductor Manufacturing Company | High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers |
US6900531B2 (en) | 2002-10-25 | 2005-05-31 | Freescale Semiconductor, Inc. | Image sensor device |
KR100505894B1 (ko) * | 2003-10-24 | 2005-08-01 | 매그나칩 반도체 유한회사 | 저온산화막의 박리현상을 개선한 시모스 이미지센서의제조방법 |
JP4865267B2 (ja) | 2005-07-14 | 2012-02-01 | 富士フイルム株式会社 | 固体撮像装置及び内視鏡 |
US20100060757A1 (en) * | 2006-12-11 | 2010-03-11 | Fujifilm Corporation | Solid-state image pickup device |
TWI466282B (zh) * | 2011-11-23 | 2014-12-21 | Tong Hsing Electronic Ind Ltd | 一種影像感測模組封裝結構及製造方法 |
WO2013118501A1 (ja) * | 2012-02-07 | 2013-08-15 | 株式会社ニコン | 撮像ユニットおよび撮像装置 |
JP2013214616A (ja) * | 2012-04-02 | 2013-10-17 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
JP5885690B2 (ja) * | 2012-04-27 | 2016-03-15 | キヤノン株式会社 | 電子部品および電子機器 |
JP2015046435A (ja) * | 2013-08-27 | 2015-03-12 | 株式会社ニコン | 固体撮像装置及び電子カメラ |
US9252179B2 (en) * | 2014-06-13 | 2016-02-02 | Visera Technologies Company Limited | Image sensor structures |
-
2015
- 2015-03-17 US US14/660,284 patent/US9679941B2/en active Active
- 2015-06-03 TW TW104117911A patent/TWI550843B/zh active
- 2015-06-18 CN CN201510341107.7A patent/CN105990381B/zh active Active
- 2015-09-04 JP JP2015174498A patent/JP6154862B2/ja active Active
-
2017
- 2017-05-08 US US15/589,089 patent/US9853083B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016174138A (ja) | 2016-09-29 |
US20160276393A1 (en) | 2016-09-22 |
CN105990381A (zh) | 2016-10-05 |
US9853083B2 (en) | 2017-12-26 |
CN105990381B (zh) | 2019-06-21 |
US20170243914A1 (en) | 2017-08-24 |
TWI550843B (zh) | 2016-09-21 |
US9679941B2 (en) | 2017-06-13 |
TW201635506A (zh) | 2016-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7498190B2 (en) | Method for fabricating a CMOS image sensor | |
TWI629776B (zh) | 固態影像裝置 | |
JP6324324B2 (ja) | ダミーパターンを有する撮像装置 | |
JP2010141020A (ja) | 固体撮像装置とその製造方法、電子機器並びに半導体装置 | |
US9070612B2 (en) | Method for fabricating optical micro structure and applications thereof | |
US9947711B2 (en) | Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element | |
KR20060077669A (ko) | 씨모스 이미지센서 및 그의 제조방법 | |
JP2011146633A (ja) | 固体撮像素子の製造方法 | |
JP4905760B2 (ja) | カラーフィルタの製造方法、カラーフィルタ、固体撮像素子の製造方法およびこれを用いた固体撮像素子 | |
JP6154862B2 (ja) | 画像センサ構造 | |
JP2009124053A (ja) | 光電変換装置及びその製造方法 | |
KR100906558B1 (ko) | 이미지 센서 및 그 제조방법 | |
JP2004319896A (ja) | 固体撮像装置及びその製造方法 | |
KR100958633B1 (ko) | 이미지 센서 및 그 제조 방법 | |
KR100640531B1 (ko) | 자기 정렬 이미지 센서 제조방법 | |
TWI590476B (zh) | 影像感測裝置與其製作方法 | |
KR100736423B1 (ko) | 이미지 센서의 제조 방법 및 이를 이용한 이미지 센서 | |
KR100739999B1 (ko) | 시모스 이미지센서 및 그 제조방법 | |
JP2011049203A (ja) | 固体撮像素子の製造方法 | |
KR20100055658A (ko) | 이미지센서 및 그 제조방법 | |
KR20090037003A (ko) | 이미지 센서 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161108 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170330 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170523 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170602 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6154862 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |