JP6137393B2 - Metal mask with resin layer - Google Patents

Description

  The present invention relates to a metal mask with a resin layer.

  2. Description of the Related Art Conventionally, in the manufacture of an organic EL element, the organic layer or cathode electrode of the organic EL element is formed by, for example, a metal mask (evaporation mask) in which a large number of minute slits are arranged in parallel at minute intervals in a region to be evaporated. ) Was used. When this metal mask is used, the metal mask is simply placed on the surface of the substrate to be vapor-deposited and held using a magnet from the back side, but the rigidity of the slit is extremely small, so the metal mask is held on the substrate surface. In this case, the slits are apt to be distorted, which has been an obstacle to the increase in the size of products with high definition or a long slit length.

  Various studies have been made on the vapor deposition mask for preventing the distortion of the slit. For example, Patent Document 1 covers a base plate that also serves as a first metal mask having a plurality of openings, and covers the openings. There has been proposed a vapor deposition mask having a second metal mask having a large number of fine slits in the region and a mask tension holding means for positioning the second metal mask on the base plate in a state where the second metal mask is pulled in the longitudinal direction of the slit. According to this vapor deposition mask, it is said that the slit accuracy can be ensured without causing distortion in the slit.

  Recently, with the increase in the size of products using organic EL elements or the increase in the substrate size, there is an increasing demand for increasing the size of a vapor deposition mask. However, with the current metal processing technology, it is difficult to accurately form a fine pattern on a large metal plate. Even if the distortion of the slit portion can be prevented by the method proposed in Patent Document 1 above. , Can not cope with high definition. In addition, when a metal mask having an opening pattern is used alone or as a vapor deposition mask in which a metal mask having an opening pattern and a metal mask having a slit are combined, the mass increases as the size increases, and the frame is included. Since the total mass also increases, handling will be hindered.

  Furthermore, when the vapor deposition mask is normally used in a state of being fixed to the frame, when the vapor deposition mask is enlarged, there is a problem that the frame and the vapor deposition mask cannot be accurately aligned. .

JP 2003-332057 A

  The present invention has been made in view of such circumstances, and a method for manufacturing a vapor deposition mask that can satisfy both high definition and light weight even when the size is increased, and a resin layer for obtaining the vapor deposition mask The main object is to provide a metal mask with an attachment.

  A metal mask with a resin layer according to an embodiment of the present disclosure includes: a metal mask provided with a slit; and a resin mask provided on the surface of the metal mask and provided with an opening corresponding to a pattern to be deposited. A metal mask with a resin layer for obtaining a laminated vapor deposition mask, wherein a resin layer is provided on one surface of the metal mask provided with a slit, and a resist material is provided inside the slit of the metal mask. And the other surface of the metal mask is covered with a resist material.

  In the metal mask with a resin layer, a through hole having an opening dimension narrower than an opening dimension of the slit may be provided inside the slit filled with the resist material. An etching resistant layer containing a material having etching resistance may be provided on the surface of the resin layer that does not contact the metal mask.

  In the metal mask with a resin layer, the metal mask may be a metal mask provided with a plurality of slits. Moreover, the cross-sectional shape when the slit of the metal mask is viewed in cross-section may be a shape that expands toward the deposition source side. The metal mask may have a thickness in the range of 5 μm to 100 μm. The metal mask may include an invar material. The metal mask may have magnetism. The resin layer may include a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less. The thickness of the resin layer may be in the range of 5 μm to 25 μm.

According to an embodiment of the present disclosure, there is provided a deposition mask manufacturing method comprising: a metal mask provided with a slit; and a resin mask provided on the surface of the metal mask and provided with an opening corresponding to a pattern to be deposited. A method for producing a laminated vapor deposition mask, comprising: preparing a metal mask with a resin layer provided with a resin layer covering the slit of the metal mask on one surface of the metal mask provided with the slit; A step of filling the slit with a resist material and covering the surface of the metal mask on the side not in contact with the resin layer with a resist material; and in the slit filled with the resist material, Forming a through hole having a narrow opening size, forming an etching resistant layer including an etching resistant material on the resin layer, the resist material, and the resisting resistance. Using the etching layer as an anti-etching mask, the resin layer is etched from the through hole side, and the resist material and the anti-etching layer are washed away after completion of etching, thereby opening corresponding to the pattern to be deposited And a step of forming a resin mask provided with.
In addition, a method for manufacturing a vapor deposition mask according to an embodiment includes a metal mask provided with slits, and a resin mask in which openings corresponding to a pattern to be vapor-deposited are arranged in a plurality of rows vertically and horizontally on the surface of the metal mask. And a metal mask with a resin layer provided with a resin layer covering the slit of the metal mask on one surface of the metal mask provided with the slit. A step of filling the slit with a resist material, a step of forming a through hole having an opening size narrower than an opening size of the slit in the slit filled with the resist material, and the resin layer A step of forming an etching resistant layer including a material having etching resistance thereon, and using the resist material and the etching resistant layer as an etching resistant mask, Etching the resin layer, and cleaning and removing the resist material and the etching resistant layer after completion of etching to form a resin mask in which openings corresponding to the pattern to be deposited are arranged in multiple rows vertically and horizontally And.

  Further, the step of forming the through hole may be a step of forming the through hole by irradiating the slit filled with the resist material with a laser. The metal mask may be a metal mask provided with a plurality of slits.

  According to the metal mask with a resin layer and the method for manufacturing a vapor deposition mask of the present invention, a vapor deposition mask that can satisfy both high definition and light weight can be manufactured with high yield even when the size is increased.

It is process drawing for demonstrating the manufacturing method of the vapor deposition mask of this invention. It is a front view which shows an example of the vapor deposition mask manufactured with the manufacturing method of this invention, and is the front view seen from the metal mask side. 2 is an enlarged cross-sectional view of a vapor deposition mask 100. FIG.

  Below, the manufacturing method of the vapor deposition mask of this invention is demonstrated concretely using drawing. FIG. 1 is a process diagram for explaining a method of manufacturing a vapor deposition mask according to the present invention. Note that (a) to (f) are all cross-sectional views.

(Process for preparing metal mask with resin layer)
In this step, as shown in FIG. 1A, a metal with a resin layer in which a resin layer 20 covering the slit 16 of the metal mask 15 is provided on one surface of the metal mask 15 provided with the slit 16 is provided. This is a step of preparing the mask 5.

  The metal mask 15 is made of metal, and is located at a position where all the openings 50 arranged in the resin mask 25 can be seen when the vapor deposition mask 100 obtained by the manufacturing method of the present invention is viewed from the front of the metal mask 15. A plurality of rows of slits 16 extending in the vertical direction or the horizontal direction are arranged.

  The width W of the slit 16 included in the metal mask 15 is not particularly limited, but is preferably designed to be shorter than the pitch between the openings 50 included in the resin mask 25 formed in a process described later. . Specifically, as shown in FIG. 2, when the slit 16 extends in the vertical direction, the horizontal width W of the slit 16 may be shorter than the pitch P1 of the openings 50 adjacent in the horizontal direction. preferable. Similarly, although not shown, when the slit 16 extends in the horizontal direction, the vertical width of the slit 16 is preferably shorter than the pitch P2 of the openings 50 adjacent in the vertical direction. On the other hand, the length L in the vertical direction when the slit 16 extends in the vertical direction is not particularly limited, and the vertical length of the metal mask 15 and the opening 50 provided in the resin mask 25 are not limited. What is necessary is just to design suitably according to a position. The width W of the slit 16 included in the metal mask 15 means the opening size of the slit 16 on the surface side of the metal mask 15 that is not in contact with the resin mask 25.

  The cross-sectional shape of the slit 16 formed in the metal mask 15 is not particularly limited, but may be a shape having a spread toward the evaporation source as shown in FIGS. preferable. More specifically, it is preferable that the angle (θ) connecting the lower bottom tip of the slit 16 of the metal mask 15 and the upper bottom tip of the slit 16 of the metal mask 15 is in the range of 25 ° to 65 °. . In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable.

  There is no particular limitation on the material of the metal mask 15, and conventionally known materials can be appropriately selected and used in the field of the evaporation mask, and examples thereof include metal materials such as stainless steel, iron-nickel alloy, and aluminum alloy. . Among them, an invar material that is an iron-nickel alloy can be suitably used because it is less deformed by heat.

  Further, when vapor deposition is performed on the substrate using the vapor deposition mask 100 of the present invention, a metal mask 15 may be used when a magnet or the like is disposed behind the substrate and the vapor deposition mask 100 in front of the substrate needs to be attracted by a magnetic force. Is preferably made of a magnetic material. Examples of the magnetic metal mask 15 include pure iron, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKS steel, Cunico steel, and an Al—Fe alloy. Further, when the material itself forming the metal mask 15 is not a magnetic body, the metal mask 15 is dispersed by dispersing the magnetic body powder in the material or coating the magnetic body powder on the surface of the material. You may give magnetism to.

  The thickness of the metal mask 15 is not particularly limited, but is preferably about 5 μm to 100 μm. Considering prevention of shadow during vapor deposition, the thickness of the metal mask 15 is preferably thin. However, when the thickness is smaller than 5 μm, the risk of breakage and deformation increases and handling may be difficult. However, in the vapor deposition mask 100 manufactured by the manufacturing method of the present invention, since the metal mask 15 is integrated with the resin mask 25, the thickness of the metal mask 15 is 5 μm, which is very thin. However, it is possible to reduce the risk of breakage and deformation, and a thickness of 5 μm or more can be used. When the thickness is greater than 100 μm, shadows may be generated, which is not preferable.

  There is no limitation in particular about the material of the resin layer 20, What is necessary is just a resin material which can be etched by the etching material used in the resin mask formation process mentioned later. In particular, it is preferable to use a light-weight material that satisfies this requirement and has a small dimensional change rate and moisture absorption rate over time and with time. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, Examples thereof include an ethylene-vinyl alcohol copolymer resin, an ethylene-methacrylic acid copolymer resin, a polyvinyl chloride resin, a polyvinylidene chloride resin, cellophane, and an ionomer resin. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both conditions is particularly preferable. .

  As a method of forming such a metal mask 5 with a resin layer, the following two methods can be exemplified. However, it is sufficient that the form finally shown in FIG. Any method can be used.

  The first method is to join a sheet containing the material of the resin layer 20 exemplified above on the metal mask 15 provided with the slit 16 via an adhesive layer or an adhesive layer, One of the metal masks 15 provided with the slits 16 is formed by fusing a sheet containing the material of the resin layer 20 exemplified above onto the metal mask 15 provided with the slits 16 without using an adhesive layer. This is a method of forming the metal mask 5 with a resin layer provided with a resin layer 20 covering the slit 16 of the metal mask 15 on the surface.

  The second method is a method of forming the metal mask 5 with a resin layer by forming the slits 16 in the metal plate after forming the resin layer 20 on the metal plate. Specifically, a resin layer coating solution is prepared by dispersing or dissolving the material of the resin layer 20 exemplified above in a suitable solvent, and this coating solution is applied onto one surface of a metal plate and dried. Thus, the resin layer 20 is formed. Next, a resist material is applied to the other surface of the metal plate, the resist material is masked using a mask having an opening shape for forming the slit 16, and exposed and developed to form a resist pattern. Then, using the resist pattern as an etching resistant mask, the other surface of the metal plate is etched to form the slit 16, and then the resist pattern is washed away. Thereby, the metal mask 5 with the resin layer provided with the resin layer 20 covering the slit 16 of the metal mask 15 is formed on one surface of the metal mask 15 provided with the slit 16.

  In the second method, the slit 16 is formed by etching. However, the slit 16 may be formed by laser processing or the like instead of this method.

  The thickness of the resin layer 20 constituting the metal mask 5 with a resin layer formed by the method exemplified above is not particularly limited, but the resin layer 20 will become the resin mask 25 in the future. Then, when vapor deposition is performed using the vapor deposition mask obtained by the manufacturing method of the present invention, a vapor deposition portion that is insufficient for the pattern to be vapor-deposited, that is, a vapor deposition portion that is thinner than the target vapor deposition thickness, In order to prevent so-called shadows from occurring, the resin layer 20 is preferably as thin as possible. However, when the thickness of the resin layer 20 is less than 5 μm, defects such as pinholes are likely to occur, and the risk of deformation and the like increases. On the other hand, if it exceeds 25 μm, shadows may occur. Considering this point, the thickness of the resin layer 20 is preferably 5 μm or more and 25 μm or less. By setting the thickness of the resin layer 20 within this range, it is possible to reduce the risk of defects such as pinholes and deformation, and to effectively prevent the generation of shadows. The resin layer 20 and the metal mask 15 may be directly bonded, or the resin layer 20 and the metal mask 15 may be bonded via an adhesive layer or an adhesive layer. When the resin layer 20 and the metal mask 15 are joined through the layers, the total thickness of the resin layer 20 and the pressure-sensitive adhesive layer or the resin layer 20 and the adhesive layer is considered in consideration of the shadow. It is preferable that the total thickness is set so as to fall within the range of 5 μm to 25 μm.

(Process to fill resist material)
In this step, as shown in FIG. 1B, a resist material 30 is filled in the slits 16 of the metal mask 5 with a resin layer. The resist material 30 is a material having a property that can be removed by a laser processing method or a material that can be developed by a photolithography method in the step of forming a through-hole 32 to be described later, and forms the opening 50. Any material having resistance to an etching material may be used, and a conventionally known resist material can be appropriately selected and used.

  In the present embodiment, as shown in FIG. 1B, the resist material 30 is applied to the surface of the metal mask 15 on the side not in contact with the resin layer 20, thereby filling the slit 16 with the resist material. . The slit 16 may be completely filled with the resist material 30, or the resist material 30 may be filled so that a part of the space exists in the slit 16. Further, as long as the slit 16 is filled with a resist material, the resist material 30 may not be applied to the surface of the metal mask 15 on the side where the resin layer 20 is not formed. When the metal mask 15 does not have resistance to an etching material for forming a resin mask 25 described later, as shown in FIG. 1B, a resist material is used so that there is no space in the slit 16. It is preferable that the resist material 30 is coated on the surface of the metal mask 15 on the side where the resin layer 20 is not formed while being filled with 30.

  Although there is no particular limitation on the resist material, a material with good workability is preferable when a through hole 32 described later is formed by laser processing. On the other hand, when the through-hole 32 is formed by a photolithography method, it is preferable to use a material having good processability and desired resolution. The resist material 30 used in the photolithography method may be a positive resist material or a negative resist material. As the positive resist material, OFPR800, TFR-H, TFR-790, etc., manufactured by Tokyo Ohka Kogyo Co., Ltd. can be used. In addition, when forming the through-hole 32 by the laser processing method, the resist material 30 does not need to have photosensitivity. By using such a resist material, it is possible to form the through hole 32 having an opening size narrower than the opening size of the slit 16 of the metal mask 15 using a laser processing method, a photolithography method, or the like, which will be described later. It is advantageous for refinement.

(Through hole forming process)
In this step, as shown in FIG. 1C, a through hole 32 having an opening size narrower than the opening size of the slit 16 is formed in the slit 16 filled with the resist material 30. The through hole 32 is a hole for bringing the etching material into contact with the surface of the resin layer 20 on the side in contact with the metal mask 15 in the step of forming the opening 50 by etching the resin mask 25 described later. The through hole 32 having an opening dimension narrower than the opening dimension of the slit 16 does not contact the resin layer 20 of the metal mask 15 than the opening dimension of the slit 16 on the side not contacting the resin layer 20 of the metal mask 15. The opening dimension of the through hole 32 on the side of the metal mask 15 is narrower and the opening dimension of the through hole 32 on the side of the metal mask 15 in contact with the resin layer 20 is smaller than the opening dimension of the slit 16 on the side of the metal mask 15 in contact with the resin layer 20. It means narrow.

  The method for forming the through hole 32 is not particularly limited, and the through hole 32 may be formed by using a laser processing method for forming the through hole 32 by irradiating a laser. May be used.

  The laser processing method is a method of forming the through hole 32 by irradiating a laser beam while removing a portion of the resist material 30 constituting the through hole 32. In this method, the through hole 32 can be easily formed without performing exposure and development steps as in the photolithography method described later, and the high definition through hole 32 can be formed. It can be preferably used in this step. In particular, since the opening size of the through hole 32 on the resin layer 20 side is a reference when the opening 50 is formed by etching the resin layer 20, the high-definition through hole 32 is formed in this step. Thus, it is possible to form the opening 50 with higher definition.

  In the process described below, the opening 50 is formed in the resin layer 20 by etching the resin layer 20, but the opening size on the side not in contact with the metal mask 15 of the opening 50 formed by the etching method. That is, the opening size corresponding to the pattern to be produced by vapor deposition is smaller than the opening size of the through hole 32 on the resin layer 20 side. In other words, the opening dimension of the opening 50 on the side not in contact with the metal mask 15 is smaller than the opening dimension of the opening 50 on the side in contact with the metal mask 15. Therefore, when forming the through hole 32 by the laser processing method, it is necessary to determine the opening size of the through hole 32 in consideration of this point.

  The laser device used in the present embodiment is not particularly limited, and a conventionally known laser device may be used.

  Instead of the laser processing method, in this step, the through holes 32 can be formed by photolithography. Specifically, the resist material filled in the slit 16 is masked using a mask having a predetermined opening size, and the through hole 32 is formed by exposure and development. The opening size of the mask for forming the through hole 32 is not particularly limited. However, in the manufacturing method of the present invention, the opening 50 is formed in the resin layer 20 using the etching method as described above. Therefore, the opening dimension of the opening 50 on the side not in contact with the metal mask 15, that is, the opening dimension corresponding to the pattern to be deposited is smaller than the opening dimension of the through hole 32 on the resin layer 20 side. Therefore, when the through hole 32 is formed by the photolithography method, it is necessary to determine the opening size of the mask in consideration of this point. The developing solution for forming the through hole 32 is not particularly limited as long as it can remove the resist material in the exposed region. For example, when the resist material OFPR800 manufactured by Tokyo Ohka Kogyo Co., Ltd. is used as the resist material 30, the resist in the exposed region can be obtained by using NMD-3 manufactured by Tokyo Ohka Kogyo Co., Ltd. as the developer. The material, that is, the resist material in the region where the through hole 32 is to be formed can be removed. In the photolithography method described here, an example in which a positive resist material is used as the resist material is mainly described. However, the through holes 32 may be formed using a negative resist material. .

  In the photolithography method described above, the through-hole 32 is formed using a mask having a predetermined opening size. However, the slit 16 is filled using an electron beam drawing apparatus, a laser drawing apparatus, or the like. The through-hole 32 can also be formed by performing direct exposure for forming the through-hole 32 on the resist material and developing the exposed portion. Direct exposure is preferable in that a high-definition through hole 32 can be formed without using a mask having the predetermined opening shape. The exposure area when direct exposure is performed can be substantially the same as the opening size of the mask when the through hole 32 is formed using the mask.

(Process for forming an etching resistant layer)
In this step, as shown in FIG. 1D, an etching resistant layer 26 is formed on the resin layer 20. By this process, when the resin layer 20 described later is etched, the surface of the resin layer 20 on the side not in contact with the metal mask 15 is prevented from being eroded by the etching material.

  The etching resistant layer 26 may be any layer that has resistance to an etching material for etching the resin layer 20 described later, and may be any layer that satisfies this requirement. For example, the etching resistant layer 26 may be made of an etching resistant resin, a so-called backing material, or the same material as the resist material 30.

  The thickness of the etching resistant layer 26 is not particularly limited, and may be appropriately selected according to the resistance of the etching resistant layer 26 to the etching material.

  In this embodiment, the etching-resistant layer 26 is formed after the through-hole 32 is formed. However, the present invention is not limited to this embodiment, and the etching-resistant layer 26 is at least after the resin layer 20 is formed. Thus, it may be formed before the later-described resin layer 20 is etched.

(Resin mask forming process)
In this step, as shown in FIG. 1E, the etching material is brought into contact with the resin layer 20 through the through hole 32 using the resist material 30 and the etching resistant layer 26 filled in the slit 16 as an etching mask. Thus, the resin layer 20 is etched to form the resin mask 25 in which the openings 50 are formed in the resin layer 20. Then, after the resin mask 25 is formed, the resist material 30 and the etching resistant layer 26 filled in the slit 16 are washed and removed, so that the metal mask 15 provided with the slit 16 as shown in FIG. And the vapor deposition mask 100 obtained by laminating the resin mask 25 provided with the opening 50 is obtained.

  There is no limitation on the etching material for etching the resin layer 20 as long as the material of the resin layer 20 can be etched. For example, when a polyimide resin is used as the resin layer 20, an alkaline aqueous solution in which sodium hydroxide is dissolved, hydrazine, or the like can be used as an etching material. Commercially available etching materials can be used as they are, and TPE3000 manufactured by Toray Engineering Co., Ltd. can be used as the polyimide resin etching material.

  There is no particular limitation on the cross-sectional shape of the opening 50 included in the resin mask 25 formed in the process, and the end faces of the resin mask that form the opening 50 may be substantially parallel to each other. Thus, it is preferable that the opening 50 has a shape such that its cross-sectional shape expands toward the vapor deposition source. In other words, it is preferable to have a tapered surface that expands toward the metal mask 15 side. By setting the cross-sectional shape of the opening 50 to the configuration, it is possible to prevent a shadow from being generated in a pattern to be formed when vapor deposition is performed using the vapor deposition mask of the present invention. The taper angle θ can be appropriately set in consideration of the thickness of the resin mask 25 and the like, but the lower bottom tip in the opening 50 of the resin mask 25 is connected to the upper bottom tip in the opening of the resin mask. The angle (θ) is preferably in the range of 25 ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. Further, in FIG. 1 (f), the end face forming the opening 50 has a linear shape, but is not limited to this, and has an outwardly convex curved shape, that is, an opening. The entire shape of the part 50 may be a bowl shape.

  Therefore, when forming the opening 50, the thickness of the resin layer 20, the resin material, and the through hole for forming the opening 50 so that the cross-sectional shape of the opening 50 is formed as described above. It is preferable that the opening size of 32 and the etching material are appropriately set and used. In the present invention, since the opening 50 is formed by etching, the cross-sectional shape of the opening 50 can be easily set to the preferred shape.

(Slimming process)
Moreover, in the manufacturing method of this invention, you may perform a slimming process between the processes demonstrated above, or a process. This step is an optional step in the manufacturing method of the present invention, and is a step of optimizing the thickness of the metal mask 15 and the thickness of the resin mask 25. A preferable thickness of the metal mask 15 or the resin mask 25 may be set as appropriate within the range described above, and detailed description thereof is omitted here.

  For example, when the metal mask 15 or the resin layer 20 constituting the mask is used as the metal mask 5 with a resin layer having a thickness larger than a desired thickness, the metal mask 5 with a resin layer is formed in the manufacturing process. Excellent durability and transportability can be imparted. On the other hand, in order to prevent the occurrence of shadows and the like, the thickness of the vapor deposition mask 100 obtained by this manufacturing method is preferably an optimum thickness. The slimming process is a process useful for optimizing the thickness of the vapor deposition mask 100 while satisfying durability and transportability during the manufacturing process.

  The slimming of the metal mask 15, that is, the optimization of the thickness of the metal mask, is performed between the steps described above or after the step, with the metal mask 15 on the side not contacting the resin layer 20 or the resin mask 25. This can be realized by etching using an etching material capable of etching.

  The same applies to the slimming of the resin layer 20 and the resin mask 25, that is, the optimization of the thickness of the resin layer 20 and the resin mask 25. The resin layer 20 and the resin mask 25 are either during or after any of the above-described steps. This can be realized by etching the surface that is not in contact with the metal mask 15 using an etching material that can etch the material of the resin layer 20 and the resin mask 25. In addition, the thickness of both the metal mask 15 and the resin mask 25 can be optimized by performing an etching process between or after any of the processes described above.

  According to the manufacturing method of the present invention described above, the etching area of the resin layer 20 is defined by the through-hole 32 formed in the slit 16 of the metal mask 15, so that the opening size of the slit 16 of the metal mask 15 is set. Without relying on, the vapor deposition mask 100 including the resin mask 25 having the highly accurate opening 50 can be manufactured. In addition, when the opening portion is formed in the resin layer using the slit pattern of the metal mask 15 as it is as an etching mask without forming the through hole 32 having an opening size narrower than the opening size of the slit 16, Although defect information, such as etching residue, is reflected in the opening formed in the resin layer, in the manufacturing method of the present invention, the opening 50 is formed in the resin layer 20 with the high-definition through hole 32 as a reference. Therefore, these problems can be solved.

  The manufacturing method of the present invention has been described above. However, the manufacturing method of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention. In the above-described embodiment, the case where the slit 16 and the opening 50 have a shape extending toward the vapor deposition source has been mainly described, but the slit 16 and the opening 50 are formed so that the cross-sectional shapes thereof are substantially parallel. It may be. Further, instead of etching, the opening 50 of the resin mask 25 can be formed by laser processing.

DESCRIPTION OF SYMBOLS 100 ... Deposition mask 5 ... Metal mask with resin layer 15 ... Metal mask 16 ... Slit 20 ... Resin layer 25 ... Resin mask 26 ... Etching-resistant layer 30 ... Resist Material 32 ... through hole 50 ... opening

Claims (10)

Metal with resin layer for obtaining a vapor deposition mask in which a metal mask provided with a slit and a resin mask located on the surface of the metal mask and provided with an opening corresponding to a pattern to be produced by vapor deposition are laminated A mask,
A resin layer is provided on one surface of the metal mask provided with the slit,
The inside of the slit of the metal mask is filled with a resist material, and the other surface of the metal mask is covered with a resist material.
Metal mask with resin layer. A through hole having an opening size narrower than the opening size of the slit is provided in the slit filled with the resist material.
The metal mask with a resin layer according to claim 1. An etching resistant layer containing a material having etching resistance is provided on the surface of the resin layer that does not contact the metal mask.
The metal mask with a resin layer according to claim 1 or 2. The metal mask is a metal mask provided with a plurality of slits.
The metal mask with a resin layer according to any one of claims 1 to 3. The cross-sectional shape when the slit of the metal mask is viewed in cross-section is a shape having a spread toward the deposition source side,
The metal mask with a resin layer according to any one of claims 1 to 4. The thickness of the metal mask is in the range of 5 μm to 100 μm.
The metal mask with a resin layer according to any one of claims 1 to 5. The metal mask includes an invar material,
The metal mask with a resin layer according to any one of claims 1 to 6. The metal mask has magnetism;
The metal mask with a resin layer according to any one of claims 1 to 7. The resin layer includes a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less.
The metal mask with a resin layer according to any one of claims 1 to 8. The resin layer has a thickness in the range of 5 μm to 25 μm.
The metal mask with a resin layer according to any one of claims 1 to 9.

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