JP6133888B2 - Deposition system having reaction chamber configured for in-situ metrology and related method - Google Patents

Description

(Cross-reference of related applications)
The subject of this application is US Provisional Application No. 61 / 526,137, filed August 22, 2011 in the name of Bertram et al., Entitled “DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIABLE LOCATIONS, AND RELATED METHODS”. No. 6, Provisional Patent Application No. 61 / US Provisional Application No. 6, entitled “DEPOSITION SYSTEMS INCLUDING A PROCURSOR GAS FURNACE WITH A REACTION CHAMBER, AND RELATED METHODS” filed August 22, 2011 in the name of Bertram et al. The subject of the book and “DIRECT” filed on 22 August 2011 in the name of Bertram With respect to the subject matter of US Provisional Application No. 61 / 526,148, entitled “LIQUID INJECTION FOR HALIDE VAPOR PHASE EPITAXY SYSTEMS AND METHODS”, the entire disclosure of each of this application is incorporated herein by reference in its entirety.

  Embodiments of the present invention generally relate to systems for depositing materials on a substrate and methods of making and using such systems. More particularly, embodiments of the present invention relate to vapor phase epitaxy (VPE) and chemical vapor deposition (CVD) methods for depositing III-V semiconductor materials on a substrate, and to such systems. It relates to methods of making and using.

  Chemical vapor deposition (CVD) is a process used to deposit solid materials on a substrate and is commonly used in the manufacture of semiconductor devices. In a chemical vapor deposition process, a substrate is exposed to one or more reagent gases that react, decompose, or react and decompose, resulting in the deposition of solid material on the surface of the substrate. Become.

  One particular type of CVD process is referred to in the art as vapor phase epitaxy (VPE). In a VPE process, a substrate is exposed to one or more reagent vapors in a reaction chamber that reacts, decomposes, or reacts and decomposes, resulting in epitaxial deposition of solid material on the surface of the substrate. It will be. VPE processes are often used to deposit III-V semiconductor materials. When one of the reagent vapors in the VPE process includes hydride vapor, this process is referred to as a hydride vapor phase epitaxy (HVPE) process.

The HVPE process is used to form III-V semiconductor materials such as gallium nitride (GaN). In such a process, the epitaxial growth of GaN on the substrate is a gas phase of gallium chloride (GaCl) and ammonia (NH ₃ ) that is performed at a high temperature between about 500 ° C. and about 1,100 ° C. in a reaction chamber. Due to phase reaction. NH ₃ is supplied from a standard NH ₃ gas source.

In some methods, GaCl vapor is passed through hydrogen chloride (HCl) gas (supplied from a standard HCl gas source) over the heated liquid gallium, and GaCl is passed in situ in the reaction chamber. ). Liquid gallium is heated to a temperature between about 750 ° C. and about 850 ° C. GaCl and NH ₃ are directed to (eg, on) the surface of a heated substrate, such as a wafer of semiconductor material. U.S. Patent issued to Solomon et al. On Jan. 30, 2001 (see U.S. Pat. No. 6,057,037) discloses a gas injection system for use in such a system and method, see the entire disclosure of that patent. Is incorporated herein by reference.

  In such a system, it is necessary to open the reaction chamber to the atmosphere to replenish the liquid gallium source. Furthermore, it is not possible to clean the reaction chamber in-situ in such a system.

US Pat. No. 6,179,913 US Patent Application Publication No. 2009/0223442

To address such challenges, methods and systems have been developed that use an external GaCl ₃ source that is injected directly into the reaction chamber. An example of such a method and system is disclosed, for example, in US Pat. No. 6,037,028 published in the name of Arena et al. On September 10, 2009, the entire disclosure of which is incorporated herein by reference.

  This summary is provided to introduce a collection of concepts in a simplified form that are further described below in the detailed description of several exemplary embodiments of the invention. This summary is intended to identify important or essential features of the claimed subject matter, but is intended to be used to limit the scope of the claimed subject matter. It's not what you're doing.

  In some embodiments, the present disclosure includes a deposition system. The deposition system includes a reaction chamber having one or more chamber walls. At least one thermal radiation emitter is configured to emit thermal radiation into the interior of the reaction chamber through at least one chamber wall of the one or more chamber walls. Thermal radiation includes wavelengths within a wavelength range in at least one of the infrared and visible regions of the electromagnetic radiation spectrum. At least one chamber wall through which thermal radiation is transmitted includes a transparent material that is at least substantially transparent to electromagnetic radiation over its wavelength range. The deposition system further includes at least one metrology device that includes a sensor. The sensor is positioned outside the reaction chamber and is oriented and configured to receive an electromagnetic radiation signal that passes from inside the reaction chamber to outside the reaction chamber. The electromagnetic radiation signal includes one or more wavelengths within the wavelength range at which thermal radiation is emitted. At least one volume of impermeable material is arranged to prevent at least a portion of the thermal radiation that will be emitted by the at least one thermal radiation emitter from being detected by the sensor of the at least one metrology device Is done. The impermeable material is impermeable to the wavelength of electromagnetic radiation within the wavelength range from which the thermal radiation is emitted.

  In additional embodiments, the present disclosure includes a method for forming a deposition system. At least one thermal radiation emitter is disposed proximate to the reaction chamber outside the reaction chamber including one or more chamber walls. The at least one thermal radiation emitter is oriented to emit thermal radiation into the interior of the reaction chamber through at least one chamber wall of the one or more chamber walls. The at least one thermal radiation emitter includes an emitter configured to emit thermal radiation within a wavelength range of electromagnetic radiation in at least one of an infrared region and a visible region of the electromagnetic radiation spectrum. The at least one chamber wall through which the thermal radiation is emitted is selected to include a transmissive material that is at least substantially transparent to electromagnetic radiation over the wavelength range at which the thermal radiation is emitted. The sensor of the at least one metrology device is located outside the reaction chamber and in proximity to the reaction chamber. The sensor is oriented to receive an electromagnetic radiation signal that passes from the inside of the reaction chamber to the outside of the reaction chamber. The sensor is selected to include a sensor that is configured to detect one or more wavelengths of electromagnetic radiation signals within a wavelength range in which the thermal radiation is emitted by the one or more thermal radiation emitters. At least one volume of impermeable material is provided at a location that prevents at least some thermal radiation emitted by the at least one thermal radiation emitter from being detected by a sensor of the at least one metrology device. The impermeable material is selected to include a material that is impermeable to wavelengths of electromagnetic radiation within the wavelength range from which the thermal radiation is emitted.

  In other embodiments, the present disclosure includes a method of depositing material on a workpiece substrate using a deposition system. At least one workpiece substrate is disposed within the reaction chamber. Thermal radiation is emitted from at least one thermal radiation emitter located outside the reaction chamber into the reaction chamber through at least a portion of one or more chamber walls of the reaction chamber. The chamber wall or walls through which the thermal radiation is emitted includes a permeable material that is permeable to the thermal radiation. At least one process gas is introduced into the reaction chamber. At least one of the workpiece substrate and the at least one process gas is heated by thermal radiation. Material is deposited from at least one process gas onto at least one workpiece substrate. At least one metrology device sensor is used to sense an electromagnetic radiation signal representative of at least one characteristic of the workpiece substrate. The sensor is located outside the reaction chamber and in proximity to the reaction chamber. The electromagnetic radiation signal sensed by the sensor passes from the inside of the reaction chamber to the sensor through one or more chamber walls of the reaction chamber that are transparent to the electromagnetic radiation signal. The sensor is shielded from at least a portion of the thermal radiation emitted by the thermal radiation emitter using at least one volume of impermeable material.

The present disclosure will be more fully understood by reference to the following detailed description of the exemplary embodiments illustrated in the accompanying drawings.
In cutaway view schematically illustrating an exemplary embodiment of a deposition system including a volume of impermeable material used to shield a metrology device sensor from thermal radiation emitted by a thermal radiation emitter of the deposition system. is there. FIG. 2 is a partial perspective view of the deposition system shown in FIG. The wavelength of the thermal radiation emitted by the thermal radiation emitter of the deposition system of FIGS. 1 and 2 and the transmissive material (FIG. 3B) and non-reflection of the various components of the deposition system of FIGS. 1 and 2 as a function of wavelength. FIG. 4 is a simplified and schematic graph used to illustrate the relationship with the transmittance of a permeable material (FIG. 3C). FIG. Relationship between the wavelength of thermal radiation emitted by the thermal radiation emitter of the deposition system of FIGS. 1 and 2 and the transmittance of the transmissive material of the various components of the deposition system of FIGS. 1 and 2 as a function of wavelength. FIG. 2 is a concise and schematic graph used to illustrate The wavelength of thermal radiation emitted by the thermal radiation emitter of the deposition system of FIGS. 1 and 2 and the transmittance of the impermeable material of the various components of the deposition system of FIGS. 1 and 2 as a function of wavelength. Fig. 4 is a concise and schematic graph used to show the relationship.

  The illustrations presented herein are not intended to be actual illustrations of any particular system, component, or device, but are idealized to be used to describe embodiments of the invention. It's just an expression.

  As used herein, the term “III-V semiconductor material” refers to one or more elements from group IIIA (B, Al, Ga, In, and Ti) of the periodic table, and group VA (N , P, As, Sb, and Bi) means and includes any semiconductor material that is at least primarily composed of one or more elements. For example, III-V semiconductor materials include, but are not limited to, GaN, GaP, GaAs, InN, InP, InAs, AlN, AlP, AlAs, InGaN, InGaP, InGaNP, and the like.

  As used herein, the term “gas” includes gas (fluid having no independent shape or volume) and vapor (gas containing a diffused liquid, or a solid substance suspended therein), The terms “steam” and “steam” are used interchangeably herein.

  FIG. 1 shows an example of a deposition system 100 according to the present disclosure. The deposition system 100 includes at least one substantially enclosed reaction chamber 102, at least one thermal radiation emitter 104, a metrology device 106, and at least one of the sensors 108 of the metrology device 106 emitted by the thermal radiation emitter 104. And a volume of impermeable material (not shown in FIG. 1) constructed and arranged to shield from part radiation. These components of the deposition system 100 are discussed in further detail below. In some embodiments, the deposition system 100 may include a CVD system and may include a VPE deposition system (eg, an HVPE deposition system).

  Reaction chamber 102 includes one or more chamber walls. For example, the chamber wall may include a horizontally oriented top wall 124, a horizontally oriented bottom wall 126, and one or more vertically oriented transverse sidewalls 128 that extend between the top wall 124 and the bottom wall 126. Including.

  The deposition system 100 includes a gas injection device 130 that is used to inject one or more process gases into the reaction chamber 102, a process gas to be removed from the reaction chamber 102, and a substrate is loaded into the reaction chamber 102. And a degassing and loading subassembly 132 used to unload the substrate from the reaction chamber 102. The gas injection device 130 is configured to inject one or more process gases through one or more of the lateral sidewalls 128 of the reaction chamber 102.

  In some embodiments, the reaction chamber 102 has an elongated rectangular prism geometry as shown in FIG. In some such embodiments, the gas injection device 130 is located at the first end of the reaction chamber 102 and the venting and loading subassembly is at the second end opposite the reaction chamber 102. To position. In other embodiments, the reaction chamber 102 may have another geometric shape.

  The deposition system 100 includes a substrate support structure 134 (eg, a susceptor) configured to support one or more workpiece substrates 136 on which semiconductor material is deposited within the deposition system 100. Or by other methods. For example, the one or more workpiece substrates 136 include dies or wafers. As shown in FIG. 1, the substrate support structure 134 is connected to a drive device (not shown) such as an electric motor configured to drive rotation of the spindle 139 and thus the substrate support structure 134 in the reaction chamber 102. Coupled to a spindle 139 that is coupled (eg, directly structurally coupled, magnetically coupled, etc.).

  The deposition system 100 further includes a gas flow system that is used to flow process gas through the reaction chamber 102. For example, the deposition system 100 includes at least one gas injection device 130 for injecting one or more process gases into the reaction chamber 102 at the first location 103A and the first or more process gases through the reaction chamber 102. A vacuum device 133 for drawing from one location 103A to a second location 103B and for evacuating one or more process gases from the reaction chamber 102 at the second location 103B. The gas injection device 130 comprises, for example, a gas injection manifold that includes a connector configured to couple with one or more conduits that carry process gas from a process gas source.

  With continued reference to FIG. 1, the deposition system 100 includes five gas inlet conduits 140A-140E that carry gases from respective process gas sources 142A-142E to the gas injection device 130. Optionally, gas valves (141A-141E) may be used to selectively control the flow of gas through gas inlet conduits 140A-140E, respectively.

In some embodiments, as described in Patent Document 2, at least one gas source _142A～142E, comprising at least one external source of GaCl 3, InCl ₃ or AlCl _3,. GaCl ₃ , InCl ₃ , or AlCl ₃ exists in the form of dimers, such as Ga ₂ Cl ₆ , In ₂ Cl ₆ , and Al ₂ Cl ₆ , respectively. Accordingly, gas source 142A~142E _include dimers such as _{Ga 2 Cl 6, In 2 Cl} 6 or _Al 2 Cl _6,.

One or more gas sources 142A~142E is GaCl ₃ source or in embodiments comprising the same, the GaCl ₃ source, at least 100 ° C. (e.g., about 130 ° C.) of the liquid GaCl ₃ maintained at a temperature of the reservoir, And includes physical means for increasing the evaporation rate of liquid GaCl ₃ . Such physical means, for example, a device configured to stir the liquid GaCl _3, a device configured to spray the liquid GaCl _3, configured to flow carrier gas over the liquid GaCl ₃ Devices, devices configured to bubble carrier gas through liquid GaCl ₃ , piezoelectric devices, such as devices configured to ultrasonically disperse liquid GaCl _3, and the like. As a non-limiting example, a carrier gas such as He, N ₂ , H ₂ , or Ar is bubbled through liquid GaCl ₃ , while liquid GaCl ₃ is maintained at a temperature of at least 100 ° C. so that the source gas is , Including one or more carrier gases through which precursor gases are conveyed.

In some embodiments, the temperature of the gas inlet conduits 140A-140E is controlled between the gas sources 142A-142E and the reaction chamber 102. Gas inlet conduit 140A～140E and associated mass flow sensor, the temperature of such controllers, gas in the gas inlet conduit 140A～140E (e.g., GaCl ₃ vapor) in order to prevent condensation of the respective gas sources 142A~ The temperature gradually increases from a first temperature at the outlet from 142E (eg, about 100 ° C. or higher) to a second temperature (about 150 ° C. or lower) at the entry point into the reaction chamber 102. Optionally, the length of gas inlet conduits 140A-140E between each gas source 142A-142E and reaction chamber 102 is about 3 feet (91.4 cm) or less, about 2 feet (61 cm) or less, or about It may be 1 foot or less. The source gas pressure is controlled using one or more pressure control systems.

  In additional embodiments, the deposition system 100 includes less than 5 (eg, 1 to 4) gas inlet conduits and respective gas sources, or the deposition system 100 exceeds 5 (eg, 6 Gas inlet conduits and the respective gas sources.

  One or more of the gas inlet conduits 140A-140E extend to the gas injection device. The gas injection device 130 comprises one or more blocks of material through which process gas is conveyed into the reaction chamber 102. One or more cooling conduits 131 extend through the block of material. Cooling fluid is flowed through the one or more cooling conduits 131 to maintain the one or more gases flowing through the gas injection device 130 by the gas inlet conduits 140A-140E within the desired temperature range during operation of the deposition system 100. For example, it may be desirable to maintain one or more gases flowing through the gas injection device 130 by the gas inlet conduits 140A-140E at a temperature less than about 200 ° C. (eg, about 150 ° C.) during operation of the deposition system 100.

  Optionally, the deposition system 100 is a US patent application entitled “DEPOSITION SYSTEMS INCLUDING A PROGRESSOR GAS FURNACE WITH A REACTION CHAMBER, AND RELATED METHODS” filed August 22, 2011 in the name of Bertram et al. An internal precursor gas furnace 138 described in US Pat.

  With continued reference to FIG. 1, the degassing and loading subassembly 132 includes a vacuum chamber 194 through which gas flowing through the reaction chamber 102 is drawn in and out of the reaction chamber 102. The vacuum in the vacuum chamber 194 is generated by the vacuum device 133. As shown in FIG. 1, the vacuum chamber 194 is located below the reaction chamber 102.

  The degassing and loading subassembly 132 further comprises a purge gas curtain device 196 configured and oriented to provide a generally flat curtain of flowing purge gas, which purge gas exits the purge gas curtain device 196 and enters the vacuum chamber 194. In addition, the degassing and loading subassembly 132 is selectively opened to use the deposition system 100 to load the workpiece substrate 136 and / or unload the workpiece substrate 136 from the substrate support structure 134. An access gate 188 that is selectively closed to process the workpiece substrate 136. In some embodiments, the access gate 188 comprises at least one plate configured to move between a closed first position and an open second position. Access gate 188 extends through the sidewall of reaction chamber 102 in some embodiments.

  The reaction chamber 102 is at least substantially enclosed and access to the substrate support structure 134 through the access gate 188 is prevented when the plate of the access gate 188 is in the closed first position. Access to the substrate support structure 134 is enabled through the access gate 188 when the plate of the access gate 188 is in the open second position.

  The purge gas curtain released by the purge gas curtain device 196 reduces or prevents gas flow out of the reaction chamber 102 during loading and / or unloading of the workpiece substrate 136.

  Gaseous by-products, carrier gas, and any excess precursor gas are evacuated from the reaction chamber 102 through the degassing and loading subassembly 132.

  The deposition system 100 includes a plurality of thermal radiation emitters 104 as shown in FIG. Thermal radiation emitter 104 is configured to emit thermal radiation within a wavelength range of electromagnetic radiation in at least one of the infrared and visible regions of the electromagnetic radiation spectrum. For example, the thermal radiation emitter 104 includes a heat lamp (not shown) configured to emit thermal energy in the form of electromagnetic radiation.

  In some embodiments, the thermal radiation emitter 104 is located outside the reaction chamber 102 and below the reaction chamber 102, adjacent to the bottom wall 126. In additional embodiments, the thermal radiation emitter 104 is located above the reaction chamber 102, adjacent to the top wall 124, or adjacent to the reaction chamber 102 next to one or more side walls 128. Or a combination of such locations.

  The thermal radiation emitters 104 are arranged in multiple rows of thermal radiation emitters 104 that are controlled independently of each other. In other words, the thermal energy emitted by each row of thermal radiation emitters 104 can be controlled independently. These rows are oriented transverse to the direction of the net flow of gas through the reaction chamber 102, which is the direction extending from left to right in the perspective view of FIG. Thus, an independently controlled row of thermal radiation emitters 104 is used to provide a selected thermal gradient across the interior of reaction chamber 102 if so desired.

  The thermal radiation emitter 104 is located outside the reaction chamber 102 and is configured to emit thermal radiation into the interior of the reaction chamber 102 through at least one chamber wall of the reaction chamber 102. Accordingly, at least a portion of the chamber wall through which thermal radiation will pass into the reaction chamber 102 includes a permeable material to allow efficient transmission of the thermal radiation into the reaction chamber 102. The transparent material is transparent in the sense that the material is at least substantially transparent to electromagnetic radiation at a wavelength corresponding to the thermal radiation emitted by the thermal radiation emitter 104. For example, at least about 80%, at least about 90%, or at least about 95% of at least a range of wavelengths of thermal radiation emitted by the thermal radiation emitter 104 incident on the transmissive material pass through the transmissive material and the reaction chamber Enter inside 102.

By way of non-limiting example, the permeable material includes a permeable refractory ceramic material such as permeable quartz (ie, silicon dioxide (SiO ₂ )). The permeable quartz may be fused quartz or may have an amorphous microstructure. At these temperatures and in the environment where the material is exposed during the deposition process using the deposition system 100, it is physically and chemically stable and is sufficient for the thermal radiation emitted by the thermal radiation emitter 104. Any other refractory material that is permeable may be used to form one or more of the chamber walls of the deposition system 100 in other embodiments of the present disclosure.

  As shown in FIG. 1, in some embodiments, the thermal radiation emitter 104 is disposed outside the reaction chamber 102 and below the reaction chamber 102, adjacent to the bottom wall 126 of the reaction chamber 102. . In such embodiments, the bottom wall 126 is transmissive, such as transmissive quartz, to allow the thermal radiation emitted by the thermal radiation emitter 104 to penetrate into the reaction chamber 102 as described above. Contains sexual materials. Of course, the thermal radiation emitter 104 may be provided adjacent to other chamber walls of the reaction chamber 102, and at least a portion of such chamber walls may also include a permeable material as described herein above. Good.

  As described above, the deposition system 100 is used to detect and / or measure the workpiece substrate 136 or one or more properties of the material deposited on the workpiece substrate 136 in situ within the reaction chamber 102. 1 or a plurality of metrology devices 106. The one or more metrology devices 106 include, for example, one or more of a reflectometer, a flexometer, and a pyrometer. Reflectometers are often used in the art, for example, to measure the growth rate and / or undulation shape of the material deposited on the workpiece substrate 136 in the reaction chamber 102. Deflection meters are often used in the art to measure the flatness or non-flatness (eg, warpage) of workpiece substrate 136 (and / or the material deposited thereon). A pyrometer is often used in the art to measure the temperature of the workpiece substrate 136 in the reaction chamber 102. Such a metrology device 106 includes one or more sensors 108 to detect and / or measure electromagnetic radiation at one or more predetermined wavelengths and make their respective measurements. In some such metrology devices 106, received and detected electromagnetic radiation is also emitted by the metrology device 106. In other words, the metrology device 106 emits electromagnetic radiation towards the workpiece substrate 136, which is then reflected, deflected, or otherwise affected by the workpiece substrate 136. Detect after.

  One or more metrology devices 106 and associated sensors 108 are located outside the reaction chamber 102. The sensor 108 is oriented and configured to receive an electromagnetic radiation signal that passes from inside the reaction chamber 102 to the outside of the reaction chamber 102. For example, as shown in FIG. 1, one or more metrology devices 106 and associated sensors 108 are located above the reaction chamber 102 and adjacent to the top wall 124. In such a configuration, the sensor 108 is oriented and configured to receive an electromagnetic radiation signal that passes from the interior of the reaction chamber 102 through the top wall 124 to the exterior of the reaction chamber 102. Thus, at least that portion of the chamber wall (e.g., top wall 124) through which the electromagnetic radiation signal reaches sensor 108 is one or more of the electromagnetic radiation corresponding to the electromagnetic radiation signal to be received by sensor 108. It is at least substantially transparent to the wavelength. At least that portion of the chamber wall through which the electromagnetic radiation signal reaches the sensor 108 includes a transmissive material as described herein above, such as transmissive quartz.

  The one or more wavelengths of electromagnetic radiation corresponding to the electromagnetic radiation signal to be received by the sensor 108 are in at least one of the infrared and visible regions of the electromagnetic radiation spectrum and are generated by the thermal radiation emitter 104. Within the wavelength range of electromagnetic radiation corresponding to the emitted thermal radiation. As a result, stray electromagnetic radiation emitted by the thermal radiation emitter 104 is received and detected by the sensor 108 of the one or more metrology devices 106, which causes noise in the detected electromagnetic radiation signal and this noise. May adversely affect the ability to use one or more metrology devices 106 to obtain accurate measurements. Further, in some circumstances, the chamber walls of reaction chamber 102 serve to reflect and guide the thermal radiation emitted by thermal radiation emitter 104 toward sensor 108 of one or more metrology devices 106.

  Thus, according to embodiments of the present disclosure, the deposition system 100 prevents at least a portion of the thermal radiation emitted by the thermal radiation emitter 104 from being detected by the sensor 108 of the one or more metrology devices 106. And further including one or more volumes of impermeable material selectively disposed. The impermeable material is impermeable to wavelengths of electromagnetic radiation in a wavelength range corresponding to the wavelength of thermal radiation emitted by the thermal radiation emitter 104. In other words, the impermeable material is impermeable to at least a portion of the thermal radiation emitted by the thermal radiation emitter 104. For example, no more than about 25%, no more than about 15%, or no more than about 5% of the wavelength of thermal radiation emitted by thermal radiation emitter 104 incident on a 1 millimeter thick sample of impervious material, Pass through a sample of impermeable material.

By way of non-limiting example, the impermeable material includes an impermeable refractory ceramic material such as impermeable quartz (ie, silicon dioxide (SiO ₂ )). The impermeable quartz may be fused quartz and may have an amorphous microstructure. In some embodiments, the quartz includes microvoids (ie, bubbles) or other inclusions that render the quartz impermeable. It is physically and chemically stable at the temperature and environment to which the material is exposed during the deposition process using the deposition system 100 and is sufficiently impervious to thermal radiation emitted by the thermal radiation emitter 104. Any other refractory material may be used as the impermeable material according to other embodiments of the present disclosure.

  As shown in FIG. 1, in some embodiments, one or more impermeable bodies 148, each containing a volume of such impermeable material, are disposed within the reaction chamber 102. . The one or more impermeable bodies 148 include, in some embodiments, a generally flat plate-like structure. In such an embodiment, the generally flat plate-like structure is oriented horizontally to extend generally parallel to the top wall 124 and the bottom wall 126 as shown in FIG. One or more impermeable bodies 148 are disposed between the top wall 124 and the bottom wall 126 to shield the one or more sensors 108 from at least a portion of the thermal radiation emitted by the thermal radiation emitter 104. Arranged and oriented. For example, as shown in FIG. 1, a generally flat plate-like impervious body 148 is disposed proximate to the gas injection device 130 over the internal precursor gas furnace 138 and an additional generally flat plate. A shaped impermeable body 148 is disposed proximate to the venting and loading subassembly 132.

  Further, at least a portion of one or more of the chamber walls includes a volume of impermeable material. For example, FIG. 2 is a simplified perspective view of the deposition system 100 shown in FIG. In FIG. 2, impermeable material is shaded and shaded to facilitate the illustration of the impermeable region of the chamber wall.

  As shown in FIG. 2, and with continued reference to FIG. 1, at least a portion of one or more of the side walls 128 includes an impermeable material. Such lateral sidewalls 128 include lateral sidewalls 128 that extend longitudinally along the reaction chamber 102 between the gas injection device 130 and the venting and loading subassembly 132. In the embodiment shown in FIG. 2, the lateral sidewall 128 that extends longitudinally along the reaction chamber 102 is formed entirely of an impermeable material. In additional embodiments, only a portion of the lateral wall 128 may include an impermeable material.

  As described above, the sensor 108 of the one or more metrology devices 106 is disposed outside the reaction chamber 102 and adjacent to the chamber wall of the reaction chamber 102. The chamber wall adjacent to the sensor 108 includes one or more transmissive portions that define a window through which the electromagnetic radiation signal passes before entering the sensor 108 and stray electromagnetic radiation emitted by the thermal radiation emitter 104. One or more impermeable portions to be shielded. For example, in the embodiment of FIG. 2, the sensor 108 (FIG. 1) of one or more metrology devices 106 is located adjacent to the top wall 124. The top wall 124 includes a volume 150 of impermeable material and a permeable window 152 extending through the volume 150 of impermeable material. Thus, the electromagnetic radiation signal enters the sensor 108 through the transmissive window 152, and the volume 150 of impermeable material shields the sensor 108 from electromagnetic radiation emitted by the thermal radiation emitter 104 (FIG. 1). .

  The volume of the impermeable material on the chamber wall may be an integral part of the chamber wall or, for example, an impermeable material that is simply placed adjacent to and optionally adhered to each chamber wall Plate or other object. By way of non-limiting example, the volume 150 of impermeable material on the top wall 124 includes a generally flat plate-like structure formed of an impermeable material from which an opening defining a window 152 extends. The plate-like impervious structure is disposed on another generally flat plate-like permeable structure formed of a permeable material that forms the rest of the top wall 124, and optionally those Glued to.

  3A-3C are graphs used to further describe embodiments of the present disclosure. FIG. 3A is a simplified and schematic graph illustrating an example of an emission spectrum for thermal radiation emitted by the thermal radiation emitter 104 (FIG. 1). In other words, FIG. 3A is a graph of the intensity of emitted thermal radiation as a function of the wavelength of emitted thermal radiation. The wavelengths represented in FIG. 3A (and FIGS. 3B and 3C) are within the visible region (eg, about 380 nm to about 760 nm) to the infrared region (eg, about 750 nm to about 1.0 mm) of the electromagnetic radiation spectrum. Extend. FIG. 3B shows the electromagnetic wave transmitted through a 1 millimeter thick sample of one or more of the permeable materials of the chamber walls described hereinabove as a function of wavelength over the same wavelength range represented in FIG. 3A. It is a graph of the ratio of radiation. Similarly, FIG. 3C shows the electromagnetic radiation transmitted through a 1 millimeter thick sample of the opaque material described hereinabove as a function of wavelength over the same wavelength range represented in FIGS. 3A and 3B. It is a graph of a ratio.

Referring to FIG. 3A, according to an embodiment of the present disclosure, a thermal radiation emitter 104 (FIG. 1) emits thermal radiation therein, such as a range extending from a first wavelength λ ₁ to a second wavelength λ ₂ . A wavelength range configured to be defined is defined. The thermal radiation emitter 104 emits thermal radiation even at wavelengths outside the wavelength range between the first wavelength λ ₁ and the second wavelength λ ₂ , but the thermal radiation is transmitted between the _first wavelength λ ₁ and the second wavelength λ ₁ . Are emitted over wavelengths including wavelengths between λ ₂ and. The sensor 108 (FIG. 1) of the one or more metrology devices 106 is within the wavelength range extending between the first wavelength λ ₁ and the second wavelength λ ₂ , as shown in FIG. 3A. Oriented and configured to receive electromagnetic radiation signals at one or more predetermined signal wavelengths such as _S.

As previously described, the thermal radiation emitter 104 (FIG. 1) is configured to emit thermal radiation through the at least one chamber wall into the interior region of the reaction chamber 102. At least one chamber wall through which the thermal radiation is transmitted is at least substantially for electromagnetic radiation for at least those wavelengths of radiation within a range extending from the _first wavelength λ ₁ to the second wavelength λ _2. Includes a permeable material that is permeable. For example, FIG. 3B shows a graph of the percentage of electromagnetic radiation transmitted through a 1 millimeter thick sample of transmissive material of one or more chamber walls through which thermal radiation is transmitted, as a function of wavelength. As shown in FIG. 3B, the average transmittance of the transmissive material is at least about 80% over a range of wavelengths extending from the _first wavelength λ ₁ to the second wavelength λ ₂ . In additional embodiments, the average transmittance of the transmissive material is at least about 90%, or at least about 95% over a range of wavelengths extending from the _first wavelength λ ₁ to the second wavelength λ ₂ .

Further, as described above, the deposition system used to shield one or more sensors 108 of one or more metrology devices 106 from at least a portion of the thermal radiation emitted by thermal radiation emitter 104 (FIG. 1). At least one volume of the 100 impermeable material is impermeable to wavelengths of electromagnetic radiation within a wavelength range extending from the _first wavelength λ ₁ to the second wavelength λ ₂ . For example, FIG. 3C shows a graph of the percentage of electromagnetic radiation transmitted through a 1 millimeter thick sample of one or more chamber wall impermeable materials through which thermal radiation is transmitted, as a function of wavelength. As shown in FIG. 3C, the average transmission of the impermeable material is about 25% or less over a range of wavelengths extending from the _first wavelength λ ₁ to the second wavelength λ ₂ . In additional embodiments, the average transmission of the impermeable material is about 15% or less, or about 5% or less over a range of wavelengths extending from the _first wavelength λ ₁ to the second wavelength λ ₂ .

In some embodiments, the above conditions are such that the area under the emission spectrum curve for thermal radiation emitted by the thermal radiation emitter 104 (such as that shown in FIG. 3A) is in the visible region of the electromagnetic radiation spectrum and red The first wavelength λ ₁ to cover at least about 50%, at least about 60%, or at least about 70% of the total area under the section of the emission spectrum curve within the outer region (ie, 380 nm to 1.0 mm). And when the second wavelength λ ₂ is defined.

  Additional embodiments of the present disclosure include methods for making and using the deposition systems described herein.

For example, referring again to FIGS. 1 and 2, deposition system 100 places one or more thermal radiation emitters 104 proximate to reaction chamber 102 outside of reaction chamber 102 that includes one or more chamber walls. Formed by. The thermal radiation emitter 104 is oriented to emit thermal radiation into the reaction chamber 102 through at least one chamber wall. Thermal radiation emitter 104 is selected to include an emitter configured to emit thermal radiation within a wavelength range of electromagnetic radiation in at least one of the infrared and visible regions of the electromagnetic radiation spectrum. The wavelength range extends from the _first wavelength λ ₁ to the second wavelength λ ₂ as described above with reference to FIGS. 3A-3C.

  At least one of the chamber walls is selected to include a transmissive material that is at least substantially transparent to electromagnetic radiation over its wavelength range, as described above with reference to FIG. 3B.

The sensor 108 of the at least one metrology device 106 is disposed outside the reaction chamber 102 and proximate to the reaction chamber 102, and the sensor 108 receives an electromagnetic radiation signal that passes from inside the reaction chamber 102 to outside the reaction chamber 102. Are oriented as follows. Further, the sensor 108 is configured such that the sensor 108 detects an electromagnetic radiation signal of one or more wavelengths within the wavelength range, such as the signal wavelength λ _S described herein with reference to FIGS. 3A-3C. To be selected.

At least the impervious material in a location that prevents at least some thermal radiation to be emitted by the one or more thermal radiation emitters 104 from being detected by the sensor 108 of the one or more metrology devices 106. One volume is provided. The impermeable material includes a material that is impermeable to wavelengths of electromagnetic radiation within a wavelength range extending from the _first wavelength λ ₁ to the second wavelength λ ₂ as described above with reference to FIG. 3C. Selected as In some embodiments, one or more of the chamber walls are selected to include at least one volume of impermeable material. In addition, or alternatively, an impermeable body comprising an impermeable material may be selected, and the impermeable body may be disposed within the reaction chamber 102. The impermeable body is selected to include a generally flat plate-like structure.

  Optionally, reaction chamber 102 may include a top wall 124, a bottom wall 126, and at least one lateral wall 128 that extends between top wall 124 and bottom wall 126. In such embodiments, the one or more thermal radiation emitters 104 are optionally disposed outside the reaction chamber 102 and below the reaction chamber 102 and adjacent to the bottom wall 126 in some embodiments. Alternatively, the sensor 108 of the one or more metrology devices 106 may be disposed outside the reaction chamber 102 and above the reaction chamber 102 and adjacent to the top wall 124. In such embodiments, the bottom wall 126 is selected to include a permeable material. Further, at least one of the top wall 124 and the at least one lateral sidewall 128 is selected to include at least one volume of impermeable material. In addition or alternatively, an impermeable body 148 may be selected and disposed within the reaction chamber 102, as discussed above with reference to FIG.

  As a non-limiting example, as discussed above, the permeable material comprises a permeable quartz material and the impermeable material comprises an impermeable quartz material.

  A method of using the deposition system 100 is performed in accordance with other embodiments of the present disclosure. At least one workpiece substrate 136 is disposed in the reaction chamber 102. Through the one or more chamber walls of the reaction chamber 102 where the heat radiation includes a permeable material that is permeable to the heat radiation from at least one thermal radiation emitter 104 outside the reaction chamber 102 into the reaction chamber 102. Released. At least one precursor gas is introduced into the reaction chamber 102, and at least one of the workpiece substrates 136 and at least one precursor gas are heated using thermal radiation. Material is deposited on the workpiece substrate 136 in the reaction chamber 102 from at least one precursor gas. The sensor 108 of the at least one metrology device 106 is used to sense an electromagnetic radiation signal representative of at least one characteristic of the workpiece substrate 136 (eg, a characteristic of material deposited on the workpiece substrate 136). The sensor 108 is located in close proximity to the reaction chamber 102 outside the reaction chamber. The electromagnetic radiation signal sensed by the sensor 108 passes from within the reaction chamber 102 to the sensor 108 through at least a portion of one or more chamber walls of the reaction chamber 102 that is transparent to the electromagnetic radiation signal. The sensor 108 is shielded from at least a portion of the thermal radiation emitted by the at least one thermal radiation emitter 104 using at least one volume of impermeable material as described hereinabove. For example, sensor 108 is shielded from at least a portion of thermal radiation using at least one chamber wall of reaction chamber 102 that includes at least one volume of impermeable material. In addition or alternatively, the sensor 108 may be shielded from at least a portion of the thermal radiation using at least one impermeable body 148 disposed within the reaction chamber 102, as described above. Good.

  Additional non-limiting exemplary embodiments of the present disclosure are specified below.

  Embodiment 1: a reaction chamber comprising one or more chamber walls and at least one of said one or more chamber walls within a wavelength range of electromagnetic radiation in at least one of the infrared and visible regions of the electromagnetic radiation spectrum At least one thermal radiation emitter configured to emit thermal radiation through the chamber wall into the reaction chamber, wherein the at least one chamber wall is at least substantially free of electromagnetic radiation over the wavelength range. A thermal radiation emitter comprising a transmissive material that is transparent to and one or more wavelengths within the wavelength range that are located outside the reaction chamber and that pass from the inside of the reaction chamber to the outside of the reaction chamber At least one metrology device including sensors oriented and configured to receive a plurality of electromagnetic radiation signals A volume of at least one opaque material that is opaque to the wavelength of the electromagnetic radiation within the wavelength range and to be emitted by the at least one thermal radiation emitter And at least one volume of impervious material arranged to prevent detection of thermal radiation of the at least one metrology device by the sensor.

  Embodiment 2: The deposition system of embodiment 1, wherein the at least one volume of impermeable material includes at least a portion of a chamber wall of the one or more chamber walls.

  Embodiment 3: The deposition system of embodiment 1, further comprising an object disposed within the reaction chamber, the object including the at least one volume of impermeable material.

  Embodiment 4: The deposition system of embodiment 3, wherein the object disposed within the reaction chamber comprises a generally flat plate-like structure.

  Embodiment 5: The embodiment wherein the one or more chamber walls of the reaction chamber include a top wall, a bottom wall, and at least one sidewall extending between the top wall and the bottom wall. The deposition system according to any one of 1 to 3.

  Embodiment 6: The deposition system of embodiment 5, wherein the at least one thermal radiation emitter is disposed adjacent to the bottom wall.

  Embodiment 7: The deposition system according to Embodiment 5 or Embodiment 6, wherein the bottom wall includes the permeable material.

  Embodiment 8: The deposition system according to Embodiment 7, wherein the bottom wall includes permeable quartz.

  Embodiment 9: The deposition system of any one of Embodiments 5 to 8, wherein at least a portion of the top wall includes a volume of impermeable material, such as impermeable quartz.

  Embodiment 10: The deposition system of any one of Embodiments 5-9, wherein at least a portion of the at least one sidewall includes a volume of impermeable material, such as impermeable quartz.

  Embodiment 11: The deposition system of any one of Embodiments 5 to 10, wherein the sensor of the at least one metrology device is located adjacent to the top wall.

  Embodiment 12: The at least one thermal radiation emitter is disposed outside the reaction chamber and adjacent to the bottom wall, wherein at least a portion of the bottom wall includes the permeable material, and the at least one metrology device includes: Embodiment 12. The deposition system according to any one of embodiments 5-11, wherein the sensor is disposed outside the reaction chamber and adjacent to the top wall.

  Embodiment 13: The deposition system of embodiment 12, wherein at least one of the top wall and the at least one sidewall comprises the at least one volume of impermeable material.

  Embodiment 14: The deposition system of embodiment 13, further comprising another volume of impermeable material disposed within the reaction chamber between the top wall and the bottom wall.

  Embodiment 15: The deposition system of embodiment 12, wherein the at least one volume of impermeable material is disposed within the reaction chamber between the top wall and the bottom wall.

  Embodiment 16: The deposition system of any one of Embodiments 1-15, wherein the at least one thermal radiation emitter includes a plurality of lamps.

  Embodiment 17: The deposition system of embodiment 1, wherein the permeable material comprises permeable quartz.

  Embodiment 18: The deposition system according to any one of Embodiments 1 to 17, wherein the impermeable material comprises impermeable quartz.

Embodiment 19 A method of forming a deposition system comprising:
Disposing at least one thermal radiation emitter outside the reaction chamber including one or more chamber walls and proximate to the reaction chamber; and through the at least one chamber wall of the one or more chamber walls, Orienting said at least one thermal radiation emitter to emit thermal radiation therein, and emitting thermal radiation within a wavelength range of electromagnetic radiation in at least one of an infrared region and a visible region of the electromagnetic radiation spectrum Selecting the at least one thermal radiation emitter to include an emitter configured to include the transmissive material that is at least substantially transparent to electromagnetic radiation over the wavelength range. Selecting one chamber wall and at least one metrology Positioning a chair sensor outside the reaction chamber and proximate to the reaction chamber, and orienting the sensor to receive an electromagnetic radiation signal passing from inside the reaction chamber to the outside of the reaction chamber Selecting the sensor to include a sensor configured to detect the electromagnetic radiation signal at one or more wavelengths within the wavelength range; and by the at least one thermal radiation emitter Providing at least one volume of impermeable material at a location that prevents at least some thermal radiation to be emitted from being detected by the sensor of the at least one metrology device; and A step of selecting the opaque material to include an opaque material for wavelengths of electromagnetic radiation within the range. Method characterized by including a flop.

  Embodiment 20: The embodiment 19 further comprising selecting at least one chamber wall of the one or more chamber walls to include the at least one volume of impermeable material. Method.

  Embodiment 21: The embodiment 20 further comprising: placing an object within the reaction chamber; and selecting the object to include another volume of impermeable material. the method of.

  Embodiment 22: The embodiment 19 further comprising: placing an object within the reaction chamber; and selecting the object to include the at least one volume of impermeable material. The method described in 1.

  Embodiment 23: The method of embodiment 22, further comprising selecting the object to include a generally flat plate-like structure.

  Embodiment 24: further comprising selecting the one or more chamber walls of the reaction chamber to include a top wall, a bottom wall, and at least one sidewall extending between the top wall and the bottom wall. Embodiment 24. The method according to any one of embodiments 19 to 23, wherein:

  Embodiment 25: The method of embodiment 24, further comprising positioning the at least one thermal radiation emitter adjacent to the bottom wall.

  Embodiment 26: The method of embodiment 24 or embodiment 25, further comprising selecting the bottom wall to include the permeable material.

  Embodiment 27: The method of any one of embodiments 24 through 26, further comprising selecting the bottom wall to include permeable quartz.

  Embodiment 28: The method of any one of embodiments 24-27, further comprising selecting the top wall to include the at least one volume of impermeable material.

  Embodiment 29: The method of any one of embodiments 24-28, further comprising selecting the at least one sidewall to include the at least one volume of impermeable material. .

  Embodiment 30: The method according to any one of Embodiments 24 to 29, further comprising positioning the sensor of the at least one metrology device adjacent to the top wall.

  Embodiment 31: The method of embodiment 30, further comprising selecting the top wall to include at least a portion including the permeable material.

  Embodiment 32: disposing the at least one thermal radiation emitter outside the reaction chamber adjacent to the bottom wall, selecting the bottom wall to include the permeable material, and the at least one 32. The method of any one of embodiments 24-31, further comprising positioning the sensor of a metrology device adjacent to the top wall outside the reaction chamber.

  Embodiment 33: The embodiment 32 further comprising the step of selecting at least one of the top wall and the at least one sidewall to include the at least one volume of impermeable material. The method described.

  Embodiment 34: The embodiment 32 further comprising: placing an object within the reaction chamber; and selecting the object to include the at least one volume of impermeable material. Or the method of embodiment 33.

  Embodiment 35: A method of depositing material on a workpiece substrate using a deposition system, comprising placing at least one workpiece substrate inside a reaction chamber; and at least one outside the reaction chamber Emitting thermal radiation from a thermal radiation emitter into the interior of the reaction chamber through at least a portion of one or more chamber walls of the reaction chamber that includes a permeable material that is permeable to thermal radiation; and at least one Introducing a process gas into the reaction chamber; heating at least one of the workpiece substrate and the at least one process gas using the thermal radiation; and from the at least one process gas A step of depositing material on the at least one workpiece substrate. And at least one metrology device sensor located in proximity to the reaction chamber outside the reaction chamber to detect an electromagnetic radiation signal representative of at least one characteristic of the at least one workpiece substrate The electromagnetic radiation signal passes from the interior of the reaction chamber to the sensor through one or more chamber walls of the reaction chamber that are transparent to the electromagnetic radiation signal; and the sensor Shielding at least a portion of the thermal radiation using at least one volume of impermeable material.

  Embodiment 36: Shielding the sensor from at least a portion of the thermal radiation using at least one volume of impermeable material using at least one chamber wall of the one or more chamber walls 36. The method of embodiment 35, comprising shielding the sensor from at least a portion of the thermal radiation, wherein the at least one chamber wall includes the at least one volume of impermeable material.

  Shielding the sensor from at least a portion of the thermal radiation using at least one volume of impermeable material comprises using at least one object disposed within the reaction chamber to 36. The method of embodiment 35, comprising shielding the sensor from at least a portion, wherein the at least one object includes the at least one volume of impermeable material.

  Since the above-described embodiments of the present invention are merely examples of embodiments of the present invention as defined by the appended claims and their legal equivalents, these embodiments are within the scope of the present invention. Is not limited. Any equivalent embodiments are intended to be within the scope of this invention. Indeed, various modifications of the invention, such as alternative useful combinations of the elements described, in addition to those shown and described herein will be apparent to those skilled in the art from this description. Such modifications are also intended to fall within the scope of the appended claims.

Claims (12)

A reaction chamber having a chamber wall including a top wall, a bottom wall, and at least one sidewall extending between the top wall and the bottom wall;
And at least one thermal radiation emitter disposed adjacent to said bottom wall, said thermal radiation emitter, in at least in one wavelength range of the electromagnetic radiation of the infrared region and the visible region of the electromagnetic radiation spectrum is configured to emit inside thermal radiation of said reaction chamber through said at least one chamber wall of the reaction chamber, said bottom wall of said reaction chamber is at least substantially to electromagnetic radiation over the wavelength range The thermal radiation emitter comprising a transmissive material that is transparent to the bottom wall, the bottom wall comprising transmissive quartz;
Oriented and configured to receive an electromagnetic radiation signal of one or more predetermined wavelengths within the wavelength range located outside the reaction chamber and passing from the inside of the reaction chamber to the outside of the reaction chamber At least one metrology device including a sensor;
At least one volume of impermeable material, wherein said impermeable material is impermeable to wavelengths of electromagnetic radiation within said wavelength range, and at least one volume of said impermeable material is said at least Arranged to prevent stray electromagnetic radiation corresponding to the wavelength of at least some of the thermal radiation emitted by one thermal radiation emitter from being detected by the sensor of the at least one metrology device; At least a portion comprising at least one volume of the impermeable material, the impermeable material comprising at least one volume of the impermeable material comprising impermeable quartz. Deposition system.   The deposition system of claim 1, wherein the at least one volume of impermeable material includes at least a portion of the one or more chamber walls.   The deposition system of claim 1, further comprising an object disposed within the reaction chamber, the object including at least one volume of the impermeable material.   The deposition system of claim 1, wherein at least a portion of the at least one sidewall includes at least one volume of the impermeable material, and the impermeable material includes impermeable quartz.   The sensor of the at least one metrology device is disposed adjacent to the top wall, wherein at least a portion of the top wall includes at least one volume of the impermeable material, and the impermeable material is impermeable. The at least one sidewall includes at least one volume of the impermeable material, and the impermeable material includes impermeable quartz. Deposition system.   The at least one thermal radiation emitter is disposed outside the reaction chamber and adjacent to the bottom wall, at least a portion of the bottom wall including the permeable material, and the sensor of the at least one metrology device includes the sensor The outer wall of the reaction chamber is disposed adjacent to the upper wall and at least one of the upper wall and the at least one sidewall includes at least one volume of the impermeable material. 2. The deposition system according to 1. A method of forming a deposition system comprising:
Proximal to the reaction chamber outside the reaction chamber having a chamber wall including at least one thermal radiation emitter, a top wall, a bottom wall, and at least one side wall extending between the top wall and the bottom wall. And placing step,
Orienting the at least one thermal radiation emitter to emit thermal radiation through the at least one chamber wall of the one or more chamber walls into the reaction chamber;
Selecting said at least one thermal radiation emitter to include an emitter configured to emit thermal radiation within a wavelength range of electromagnetic radiation in at least one of an infrared region and a visible region of the electromagnetic radiation spectrum. When,
Selecting the bottom wall to include a transparent material that is at least substantially transparent to electromagnetic radiation over the wavelength range, the transparent material including a quartz material;
Positioning at least one metrology device sensor outside the reaction chamber and proximate to the reaction chamber;
Orienting the sensor to receive an electromagnetic radiation signal passing from the interior of the reaction chamber to the exterior of the reaction chamber;
Selecting the sensor to include a sensor configured to detect the electromagnetic radiation signal of one or more predetermined wavelengths within the wavelength range;
Impervious in a position to prevent stray electromagnetic radiation corresponding to the wavelength of at least some thermal radiation emitted by the at least one thermal radiation emitter from being detected by the sensor of the at least one metrology device Providing at least one volume of material;
Selecting the opaque material to include an opaque material for wavelengths of electromagnetic radiation within the wavelength range;
Selecting the top wall to include at least one volume of the impermeable material, the impermeable material comprising impermeable quartz. Method.   8. The method of claim 7, further comprising selecting at least one chamber wall of the one or more chamber walls to include at least one volume of the impermeable material. Placing an object within the reaction chamber;
The method of claim 7, further comprising selecting the object to include at least one volume of the impermeable material.   8. The method of claim 7, further comprising selecting the at least one sidewall to include at least one volume of the impermeable material, wherein the impermeable material comprises impermeable quartz. the method of. Positioning the sensor of the at least one metrology device adjacent to the top wall;
Selecting the top wall to include at least one volume of the impermeable material, the impermeable material comprising impermeable quartz;
Selecting the at least one sidewall to include at least one volume of the impermeable material, wherein the impermeable material comprises impermeable quartz. 8. A method according to claim 7, characterized in that Positioning the at least one thermal radiation emitter outside the reaction chamber and adjacent to the bottom wall;
Selecting the bottom wall to include the permeable material;
Positioning the sensor of the at least one metrology device outside the reaction chamber and adjacent to the top wall;
8. The method of claim 7, further comprising selecting at least one of the top wall and the at least one side wall to include at least one volume of the impermeable material. .

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