JP6113152B2 - シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法 - Google Patents

シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法 Download PDF

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Publication number
JP6113152B2
JP6113152B2 JP2014513752A JP2014513752A JP6113152B2 JP 6113152 B2 JP6113152 B2 JP 6113152B2 JP 2014513752 A JP2014513752 A JP 2014513752A JP 2014513752 A JP2014513752 A JP 2014513752A JP 6113152 B2 JP6113152 B2 JP 6113152B2
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Prior art keywords
wafer
less
silicon wafer
degradation
temperature
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Japanese (ja)
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JP2014526135A (ja
JP2014526135A5 (https=
Inventor
ロバート・ジェイ・ファルスター
ウラジミール・ヴェー・ヴォロンコフ
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SunEdison Products Singapore Pte Ltd
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SunEdison Products Singapore Pte Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2014513752A 2011-06-03 2012-06-01 シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法 Expired - Fee Related JP6113152B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161493119P 2011-06-03 2011-06-03
US61/493,119 2011-06-03
PCT/US2012/040492 WO2012167104A1 (en) 2011-06-03 2012-06-01 Processes for suppressing minority carrier lifetime degradation in silicon wafers
US13/486,463 2012-06-01
US13/486,463 US8969119B2 (en) 2011-06-03 2012-06-01 Processes for suppressing minority carrier lifetime degradation in silicon wafers

Publications (3)

Publication Number Publication Date
JP2014526135A JP2014526135A (ja) 2014-10-02
JP2014526135A5 JP2014526135A5 (https=) 2017-01-26
JP6113152B2 true JP6113152B2 (ja) 2017-04-12

Family

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Application Number Title Priority Date Filing Date
JP2014513752A Expired - Fee Related JP6113152B2 (ja) 2011-06-03 2012-06-01 シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法

Country Status (8)

Country Link
US (2) US8969119B2 (https=)
EP (1) EP2715805B1 (https=)
JP (1) JP6113152B2 (https=)
KR (1) KR20140041614A (https=)
CN (1) CN103582955B (https=)
MY (1) MY181635A (https=)
SG (1) SG194904A1 (https=)
WO (1) WO2012167104A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9634098B2 (en) 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
MY182430A (en) * 2013-06-26 2021-01-25 Univ Konstanz Method and device for producing a photovoltaic element with stabilized efficiency
CN103681964A (zh) * 2013-11-29 2014-03-26 奥特斯维能源（太仓）有限公司 太阳能电池片效率衰减后恢复方法
CN106463403B (zh) * 2014-06-02 2020-05-05 胜高股份有限公司 硅晶片及其制造方法
KR101569415B1 (ko) * 2014-06-09 2015-11-16 엘지전자 주식회사 태양 전지의 제조 방법
JP5830147B1 (ja) * 2014-09-04 2015-12-09 信越化学工業株式会社 太陽電池及び太陽電池の製造方法
US10636934B2 (en) * 2015-09-23 2020-04-28 centrotherm international AG Method and device for passivating defects in semiconductor substrates
EP3208366A1 (en) * 2016-02-16 2017-08-23 Siltronic AG Fz silicon and method to prepare fz silicon
CN107369616B (zh) * 2017-07-07 2021-03-12 苏州阿特斯阳光电力科技有限公司 用于处理半导体基板的方法、得到的半导体基板及其用途

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197717A (ja) * 1982-05-13 1983-11-17 Toshiba Corp 半導体装置の製造方法
JP2003533053A (ja) * 2000-05-05 2003-11-05 ユニサーチ リミテツド 光起電力素子のための低領域金属接点
JP4607304B2 (ja) * 2000-09-26 2011-01-05 信越半導体株式会社 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法
US7084048B2 (en) * 2004-05-07 2006-08-01 Memc Electronic Materials, Inc. Process for metallic contamination reduction in silicon wafers
DE102006012920B3 (de) * 2006-03-21 2008-01-24 Universität Konstanz Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
CN100536177C (zh) * 2008-01-29 2009-09-02 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法
FR2929755B1 (fr) * 2008-04-03 2011-04-22 Commissariat Energie Atomique Procede de traitement d'un substrat semi-conducteur par activation thermique d'elements legers
US7943514B2 (en) * 2009-09-03 2011-05-17 Texas Instruments Incorporated Integrated circuits having TSVs including metal gettering dielectric liners
CN102834933B (zh) * 2009-09-18 2016-03-30 乔治洛德方法研究和开发液化空气有限公司 性能改善的太阳能电池
US9105786B2 (en) * 2011-04-18 2015-08-11 Cisco Technology, Inc. Thermal treatment of silicon wafers useful for photovoltaic applications

Also Published As

Publication number Publication date
MY181635A (en) 2020-12-30
US9142616B2 (en) 2015-09-22
US20130102129A1 (en) 2013-04-25
US20150123248A1 (en) 2015-05-07
SG194904A1 (en) 2013-12-30
CN103582955B (zh) 2016-06-29
JP2014526135A (ja) 2014-10-02
US8969119B2 (en) 2015-03-03
EP2715805B1 (en) 2016-04-06
WO2012167104A4 (en) 2013-02-28
WO2012167104A1 (en) 2012-12-06
EP2715805A1 (en) 2014-04-09
CN103582955A (zh) 2014-02-12
KR20140041614A (ko) 2014-04-04

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