JP6101266B2 - 三次元イオン処理装置及び方法 - Google Patents
三次元イオン処理装置及び方法 Download PDFInfo
- Publication number
- JP6101266B2 JP6101266B2 JP2014526176A JP2014526176A JP6101266B2 JP 6101266 B2 JP6101266 B2 JP 6101266B2 JP 2014526176 A JP2014526176 A JP 2014526176A JP 2014526176 A JP2014526176 A JP 2014526176A JP 6101266 B2 JP6101266 B2 JP 6101266B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- workpiece
- angle
- angle profile
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 63
- 238000012545 processing Methods 0.000 title claims description 51
- 150000002500 ions Chemical class 0.000 claims description 248
- 238000010884 ion-beam technique Methods 0.000 claims description 62
- 238000000605 extraction Methods 0.000 claims description 34
- 238000009826 distribution Methods 0.000 claims description 33
- 238000005468 ion implantation Methods 0.000 claims description 18
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 230000002902 bimodal effect Effects 0.000 claims description 5
- 239000007943 implant Substances 0.000 claims description 4
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 claims 1
- 238000005457 optimization Methods 0.000 claims 1
- 238000003672 processing method Methods 0.000 claims 1
- 239000002131 composite material Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000002513 implantation Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 bit pattern media Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
- H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/210,959 | 2011-08-16 | ||
| US13/210,959 US8288741B1 (en) | 2011-08-16 | 2011-08-16 | Apparatus and method for three dimensional ion processing |
| PCT/US2012/050967 WO2013025816A1 (en) | 2011-08-16 | 2012-08-15 | Apparatus and method for three dimensional ion processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014529166A JP2014529166A (ja) | 2014-10-30 |
| JP2014529166A5 JP2014529166A5 (enExample) | 2015-09-17 |
| JP6101266B2 true JP6101266B2 (ja) | 2017-03-22 |
Family
ID=46755129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014526176A Expired - Fee Related JP6101266B2 (ja) | 2011-08-16 | 2012-08-15 | 三次元イオン処理装置及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8288741B1 (enExample) |
| JP (1) | JP6101266B2 (enExample) |
| KR (1) | KR101937910B1 (enExample) |
| CN (1) | CN103733300B (enExample) |
| TW (1) | TWI539495B (enExample) |
| WO (1) | WO2013025816A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12075009B2 (en) | 2019-07-05 | 2024-08-27 | Canon Kabushiki Kaisha | Communication device, method for selecting destination, and storage medium |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8907307B2 (en) * | 2011-03-11 | 2014-12-09 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for maskless patterned implantation |
| US9232628B2 (en) | 2013-02-20 | 2016-01-05 | Varian Semiconductor Equipment Associates, Inc. | Method and system for plasma-assisted ion beam processing |
| US9728623B2 (en) | 2013-06-19 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Replacement metal gate transistor |
| US9153444B2 (en) | 2013-06-19 | 2015-10-06 | Varian Semiconductor Equipment Associates, Inc. | Process flow for replacement metal gate transistors |
| US9524849B2 (en) * | 2013-07-18 | 2016-12-20 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
| US9934981B2 (en) | 2013-09-26 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing substrates using directional reactive ion etching |
| JP6312405B2 (ja) * | 2013-11-05 | 2018-04-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9293301B2 (en) | 2013-12-23 | 2016-03-22 | Varian Semiconductor Equipment Associates, Inc. | In situ control of ion angular distribution in a processing apparatus |
| US9287123B2 (en) | 2014-04-28 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films |
| US9336998B2 (en) * | 2014-05-09 | 2016-05-10 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for dynamic control of ion beam energy and angle |
| US9520267B2 (en) * | 2014-06-20 | 2016-12-13 | Applied Mateirals, Inc. | Bias voltage frequency controlled angular ion distribution in plasma processing |
| US9514912B2 (en) * | 2014-09-10 | 2016-12-06 | Varian Semiconductor Equipment Associates, Inc. | Control of ion angular distribution of ion beams with hidden deflection electrode |
| US10008384B2 (en) | 2015-06-25 | 2018-06-26 | Varian Semiconductor Equipment Associates, Inc. | Techniques to engineer nanoscale patterned features using ions |
| US9706634B2 (en) * | 2015-08-07 | 2017-07-11 | Varian Semiconductor Equipment Associates, Inc | Apparatus and techniques to treat substrates using directional plasma and reactive gas |
| US9984889B2 (en) | 2016-03-08 | 2018-05-29 | Varian Semiconductor Equipment Associates, Inc. | Techniques for manipulating patterned features using ions |
| US10229832B2 (en) | 2016-09-22 | 2019-03-12 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming patterned features using directional ions |
| US10193066B2 (en) * | 2017-06-30 | 2019-01-29 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques for anisotropic substrate etching |
| US10957521B2 (en) * | 2018-05-29 | 2021-03-23 | Lam Research Corporation | Image based plasma sheath profile detection on plasma processing tools |
| US10468226B1 (en) * | 2018-09-21 | 2019-11-05 | Varian Semiconductor Equipment Associates, Inc. | Extraction apparatus and system for high throughput ion beam processing |
| TWI743958B (zh) * | 2020-08-21 | 2021-10-21 | 力晶積成電子製造股份有限公司 | 離子植入設備的控制方法 |
| US11942307B2 (en) * | 2021-10-15 | 2024-03-26 | Tokyo Electron Limited | Plasma processing with radio frequency (RF) source and bias signal waveforms |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7547460B2 (en) * | 2000-09-15 | 2009-06-16 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter optimizer scan waveform retention and recovery |
| US20060169922A1 (en) * | 2004-10-08 | 2006-08-03 | Shengwu Chang | Ion implant ion beam parallelism and direction integrity determination and adjusting |
| JP2006278006A (ja) * | 2005-03-28 | 2006-10-12 | Japan Atomic Energy Agency | イオン源引き出し領域におけるプラズマ境界面制御方法及びそのイオン源 |
| US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
| KR100732770B1 (ko) * | 2006-02-13 | 2007-06-27 | 주식회사 하이닉스반도체 | 불균일 이온 주입 장비 및 방법 |
| JP5020547B2 (ja) * | 2006-06-02 | 2012-09-05 | 株式会社Ｓｅｎ | ビーム処理装置及びビーム処理方法 |
| US20080132046A1 (en) * | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
| US9123509B2 (en) * | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| JP5222507B2 (ja) * | 2007-08-30 | 2013-06-26 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置及び試料加工方法 |
| US7755066B2 (en) * | 2008-03-28 | 2010-07-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improved uniformity tuning in an ion implanter system |
| US7994488B2 (en) * | 2008-04-24 | 2011-08-09 | Axcelis Technologies, Inc. | Low contamination, low energy beamline architecture for high current ion implantation |
| US8089052B2 (en) * | 2008-04-24 | 2012-01-03 | Axcelis Technologies, Inc. | Ion source with adjustable aperture |
| US8101510B2 (en) * | 2009-04-03 | 2012-01-24 | Varian Semiconductor Equipment Associates, Inc. | Plasma processing apparatus |
| US8603591B2 (en) * | 2009-04-03 | 2013-12-10 | Varian Semiconductor Ewuipment Associates, Inc. | Enhanced etch and deposition profile control using plasma sheath engineering |
| US8623171B2 (en) * | 2009-04-03 | 2014-01-07 | Varian Semiconductor Equipment Associates, Inc. | Plasma processing apparatus |
| US8188445B2 (en) * | 2009-04-03 | 2012-05-29 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| US7767977B1 (en) * | 2009-04-03 | 2010-08-03 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| US8461030B2 (en) * | 2009-11-17 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for controllably implanting workpieces |
-
2011
- 2011-08-16 US US13/210,959 patent/US8288741B1/en not_active Expired - Fee Related
-
2012
- 2012-08-15 CN CN201280039634.7A patent/CN103733300B/zh not_active Expired - Fee Related
- 2012-08-15 TW TW101129546A patent/TWI539495B/zh not_active IP Right Cessation
- 2012-08-15 KR KR1020147006689A patent/KR101937910B1/ko active Active
- 2012-08-15 JP JP2014526176A patent/JP6101266B2/ja not_active Expired - Fee Related
- 2012-08-15 WO PCT/US2012/050967 patent/WO2013025816A1/en not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12075009B2 (en) | 2019-07-05 | 2024-08-27 | Canon Kabushiki Kaisha | Communication device, method for selecting destination, and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103733300A (zh) | 2014-04-16 |
| WO2013025816A1 (en) | 2013-02-21 |
| TW201312634A (zh) | 2013-03-16 |
| TWI539495B (zh) | 2016-06-21 |
| KR101937910B1 (ko) | 2019-01-11 |
| JP2014529166A (ja) | 2014-10-30 |
| KR20140064863A (ko) | 2014-05-28 |
| US8288741B1 (en) | 2012-10-16 |
| CN103733300B (zh) | 2016-02-24 |
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