JP6101084B2 - Separation device - Google Patents

Separation device Download PDF

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JP6101084B2
JP6101084B2 JP2013006184A JP2013006184A JP6101084B2 JP 6101084 B2 JP6101084 B2 JP 6101084B2 JP 2013006184 A JP2013006184 A JP 2013006184A JP 2013006184 A JP2013006184 A JP 2013006184A JP 6101084 B2 JP6101084 B2 JP 6101084B2
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substrate
support
peeling member
peeling
support base
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JP2014138092A (en
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健太呂 飯塚
健太呂 飯塚
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Disco Corp
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Priority to TW102143495A priority patent/TWI605532B/en
Priority to KR1020130153143A priority patent/KR102063366B1/en
Priority to US14/134,052 priority patent/US9266315B2/en
Priority to DE102014200518.3A priority patent/DE102014200518A1/en
Priority to CN201410015338.4A priority patent/CN103943457B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1168—Gripping and pulling work apart during delaminating
    • Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
    • Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
    • Y10T156/1967—Cutting delaminating means

Description

本発明は、第１の基板と第２の基板とが接合された複合基板を第１の基板と第２の基板とに分離する分離装置に関する。   The present invention relates to a separation apparatus that separates a composite substrate in which a first substrate and a second substrate are bonded into a first substrate and a second substrate.

光デバイス製造工程においては、略円板形状であるサファイア基板や炭化珪素等のエピタキシー基板の表面にバッファー層を介して窒化ガリウム（GaN）またはインジュウム・ガリウム・リン（INGaP）若しくはアルミニウム・窒化ガリウム(AlGaN)から構成されるn型半導体層およびp型半導体層からなる発光層が積層され格子状に形成された複数のストリートによって区画された複数の領域に発光ダイオード、レーザーダイオード等の光デバイスを形成して光デバイスウエーハを構成する。そして、光デバイスウエーハをストリートに沿って分割することにより個々の光デバイスを製造している。   In the optical device manufacturing process, gallium nitride (GaN) or indium gallium phosphorus (INGaP) or aluminum gallium nitride (ING) via a buffer layer on the surface of an approximately sapphire substrate or silicon carbide epitaxy substrate. Optical devices such as light-emitting diodes and laser diodes are formed in multiple regions partitioned by multiple streets formed by laminating light-emitting layers composed of n-type semiconductor layers and p-type semiconductor layers composed of (AlGaN). Thus, an optical device wafer is configured. Each optical device is manufactured by dividing the optical device wafer along the street.

また、光デバイスの輝度を向上させる技術として、光デバイスウエーハを構成するサファイア基板や炭化珪素等のエピタキシー基板の表面にバッファー層を介して積層されたn型半導体層およびp型半導体層からなる発光層をモリブデン(Mo)、銅(Cu)、シリコン(Si)等の移設基板を金錫(AuSn)等の接合金属層を介して接合し、エピタキシー基板の裏面側からバッファー層で吸収される波長（例えば２４８nm）のレーザー光線を照射することによりバッファー層を破壊し、エピタキシー基板を発光層から剥離して、発光層を移設基板に移し替えるリフトオフと呼ばれる製造方法が下記特許文献１に開示されている。   In addition, as a technology to improve the brightness of optical devices, light emission consisting of an n-type semiconductor layer and a p-type semiconductor layer stacked on the surface of an epitaxy substrate such as a sapphire substrate or silicon carbide constituting an optical device wafer via a buffer layer Wavelength absorbed by the buffer layer from the back side of the epitaxy substrate when the transfer substrate of molybdenum (Mo), copper (Cu), silicon (Si), etc. is joined via a joining metal layer of gold tin (AuSn), etc. The following Patent Document 1 discloses a manufacturing method called lift-off in which a buffer layer is destroyed by irradiating a laser beam (for example, 248 nm), an epitaxy substrate is peeled from a light emitting layer, and the light emitting layer is transferred to a transfer substrate. .

特表２００５−５１６４１５号公報JP 2005-516415 gazette

而して、エピタキシー基板の裏面側からバッファー層に集光点を位置付けてレーザー光線を照射すると、バッファー層を構成する窒化ガリウム（GaN）またはインジュウム・ガリウム・リン（INGaP）若しくはアルミニウム・窒化ガリウム(AlGaN)がGaとガス（N2等）に分解することでバッファー層が破壊されるが、窒化ガリウム（GaN）またはインジュウム・ガリウム・リン（INGaP）若しくはアルミニウム・窒化ガリウム(AlGaN)がGaとガス（N2等）とに分解する領域と、分解しない領域とが存在し、バッファー層の破壊にムラが生じてエピタキシー基板の剥離が円滑に行えないという問題がある。
また、光デバイスの輝度を向上させるためにエピタキシー基板の表面に凹凸が形成されている場合には、レーザー光線が凹凸の壁に遮られバッファー層の破壊が抑制されエピタキシー基板の剥離が困難になるという問題がある。 Thus, when the focal point is positioned on the buffer layer from the back side of the epitaxy substrate and irradiated with a laser beam, gallium nitride (GaN), indium gallium phosphorus (INGaP), or aluminum gallium nitride (AlGaN) that constitutes the buffer layer ) Decomposes into Ga and gas (such as N 2 ), which destroys the buffer layer, but gallium nitride (GaN) or indium gallium phosphorus (INGaP) or aluminum gallium nitride (AlGaN) contains Ga and gas ( N 2 etc.) and a non-decomposed region exist, and there is a problem that the buffer layer is unevenly broken and the epitaxy substrate cannot be peeled off smoothly.
In addition, when unevenness is formed on the surface of the epitaxy substrate in order to improve the brightness of the optical device, it is difficult to peel off the epitaxy substrate because the laser beam is blocked by the uneven wall and the destruction of the buffer layer is suppressed. There's a problem.

本発明は上記事実に鑑みてなされたものであり、その主たる技術的課題は、第１の基板と第２の基板とが接合された複合基板を第１の基板と第２の基板とに容易に分離することができる分離装置を提供することである。   The present invention has been made in view of the above-mentioned facts, and the main technical problem thereof is that a composite substrate in which a first substrate and a second substrate are bonded can be easily combined into a first substrate and a second substrate. It is an object of the present invention to provide a separation device that can be separated.

上記主たる技術課題を解決するため、本発明によれば、第１の基板と第２の基板とが接合された複合基板を第１の基板と第２の基板とに分離する分離装置であって、
複合基板を水平状態で支持する支持面を備えた支持基台と、
該支持基台に配設され該支持面に載置された複合基板の外周側面を支持する側面支持手段と、
該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第１の基板と第２の基板との境界部に挿入して第１の基板と第２の基板とを剥離する剥離手段と、を具備し、
該剥離手段は、該側面支持手段と対向する位置に該支持基台の該支持面と平行状態で配設され第１の基板と第２の基板との境界部に挿入する楔部を備えた剥離部材と、該剥離部材を該支持基台の該支持面に対して垂直な方向に移動して該楔部を第１の基板と第２の基板との境界部に位置付ける剥離部材位置付け手段と、該剥離部材の該楔部を該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第１の基板と第２の基板との境界部に進退せしめる剥離部材進退手段と、を具備しており、
該側面支持手段は、少なくとも２個のローラによって構成され、該２個のローラは上部大径部と下部小径部とを備え、複合基板の外周側面を回動可能に支持する、
ことを特徴とする分離装置が提供される。 In order to solve the above main technical problem, according to the present invention, there is provided a separation apparatus for separating a composite substrate in which a first substrate and a second substrate are bonded into a first substrate and a second substrate. ,
A support base having a support surface for supporting the composite substrate in a horizontal state;
Side support means for supporting the outer peripheral side surface of the composite substrate disposed on the support base and placed on the support surface;
The first substrate and the second substrate are inserted into a boundary portion between the first substrate and the second substrate constituting the composite substrate supported by the support surface and the side support means of the support base. A peeling means for peeling,
The peeling means includes a wedge portion that is disposed in parallel with the support surface of the support base at a position facing the side surface support means and is inserted into a boundary portion between the first substrate and the second substrate. A peeling member, and peeling member positioning means for moving the peeling member in a direction perpendicular to the support surface of the support base and positioning the wedge portion at a boundary portion between the first substrate and the second substrate. The advancing and retreating of the peeling member causes the wedge portion of the peeling member to advance and retreat to the boundary portion between the first substrate and the second substrate constituting the composite substrate supported by the support surface of the support base and the side surface supporting means. has been and means, the,
The side support means is composed of at least two rollers, and the two rollers include an upper large diameter portion and a lower small diameter portion, and rotatably support the outer peripheral side surface of the composite substrate.
A separation device is provided.

上記支持基台の支持面および側面支持手段に支持された複合基板を構成する第１の基板と第２の基板との境界部を検出して剥離部材の楔部と位置合わせする検出手段を備えていることが望ましい。 A first substrate and a detecting means for aligning the wedge portion of the detect and peeling member boundary portion between the second substrate constituting the composite substrate supported by the upper Symbol support base of the support surface and side support means It is desirable to have it.

本発明による分離装置は、複合基板を水平状態で支持する支持面を備えた支持基台と、該支持基台に配設され支持面に載置された複合基板の外周側面を支持する側面支持手段と、支持基台の支持面および側面支持手段に支持された複合基板を構成する第１の基板と第２の基板との境界部に挿入して第１の基板と第２の基板とを剥離する剥離手段とを具備し、剥離手段は、側面支持手段と対向する位置に支持基台の支持面と平行状態で配設され第１の基板と第２の基板との境界部に挿入する楔部を備えた剥離部材と、剥離部材を支持基台の支持面に対して垂直な方向に移動して楔部を第１の基板と第２の基板との境界部に位置付ける剥離部材位置付け手段と、剥離部材の楔部を支持基台の支持面および側面支持手段に支持された複合基板を構成する第１の基板と第２の基板との境界部に進退せしめる剥離部材進退手段とを具備しており、該側面支持手段は、少なくとも２個のローラによって構成され、該２個のローラは上部大径部と下部小径部とを備え、複合基板の外周側面を回動可能に支持するので、剥離部材の楔部を第１の基板と第２の基板との境界部に進入することにより、第１の基板と第２の基板との外周部における複数個所において剥離力を作用させることができる。従って、例えばエピタキシー基板を発光層から剥離して発光層を移設基板に移し替えるリフトオフ加工においてエピタキシー基板と発光層との境界部に形成されているバッファー層の破壊にムラがあっても、またエピタキシー基板の表面に凹凸が形成されている場合であっても、エピタキシー基板を容易かつ確実に剥離することができる。 The separation apparatus according to the present invention includes a support base having a support surface that supports the composite substrate in a horizontal state, and a side support that supports the outer peripheral side surface of the composite substrate that is disposed on the support base and placed on the support surface. And the first substrate and the second substrate inserted into a boundary portion between the first substrate and the second substrate constituting the composite substrate supported by the support surface of the support base and the side support means. A peeling means for peeling, and the peeling means is disposed in parallel with the support surface of the support base at a position facing the side surface support means and is inserted into a boundary portion between the first substrate and the second substrate. A peeling member having a wedge portion, and a peeling member positioning means for moving the peeling member in a direction perpendicular to the support surface of the support base and positioning the wedge portion at a boundary portion between the first substrate and the second substrate And a composite substrate in which the wedge portion of the peeling member is supported by the support surface of the support base and the side support means That the first substrate and is provided with a release member moving means for allowed to advance and retreat in the boundary portion between the second substrate, said side support means is constituted by at least two rollers, the two rollers are upper Since it has a large diameter portion and a lower small diameter portion and supports the outer peripheral side surface of the composite substrate so as to be rotatable , by entering the wedge portion of the peeling member into the boundary portion between the first substrate and the second substrate, A peeling force can be applied at a plurality of locations on the outer periphery of the first substrate and the second substrate. Therefore, even if the buffer layer formed at the boundary between the epitaxy substrate and the light-emitting layer is uneven in lift-off processing in which, for example, the epitaxy substrate is peeled off from the light-emitting layer and the light-emitting layer is transferred to the transfer substrate, the epitaxy Even when unevenness is formed on the surface of the substrate, the epitaxy substrate can be easily and reliably peeled off.

本発明に従って構成された分離装置の斜視図。1 is a perspective view of a separation device constructed in accordance with the present invention. 図１に示す分離装置を構成する要部構成部材を分解して示す斜視図。The perspective view which decomposes | disassembles and shows the principal part structural member which comprises the separation apparatus shown in FIG. 図１に示す分離装置を構成する側面支持手段の要部断面図。The principal part sectional drawing of the side surface support means which comprises the separation apparatus shown in FIG. 被加工物としての複合基板の斜視図。The perspective view of the composite substrate as a to-be-processed object. 図１に示す分離装置を用いて実施する剥離部材位置付け工程の説明図。Explanatory drawing of the peeling member positioning process implemented using the separation apparatus shown in FIG.

以下、本発明に従って構成された分離装置の好適な実施形態について、添付図面を参照して詳細に説明する。   DESCRIPTION OF EMBODIMENTS Hereinafter, a preferred embodiment of a separation device configured according to the present invention will be described in detail with reference to the accompanying drawings.

図１には本発明に従って構成された分離装置の斜視図が示されており、図２には図１に示す分離装置を構成する要部構成部材を分解して示す斜視図が示されている。
図示の実施形態における分離装置は、複合基板を支持する支持基台２と、該支持基台２に配設された複合基板の外周側面を支持する側面支持手段３と、該支持基台２および側面支持手段３に支持された複合基板を剥離する剥離手段４を具備している。 FIG. 1 shows a perspective view of a separating apparatus constructed in accordance with the present invention, and FIG. 2 shows a perspective view showing exploded essential components constituting the separating apparatus shown in FIG. .
The separation device in the illustrated embodiment includes a support base 2 that supports the composite substrate, side support means 3 that supports the outer peripheral side surface of the composite substrate disposed on the support base 2, the support base 2 and Peeling means 4 for peeling the composite substrate supported by the side support means 3 is provided.

支持基台２は、図示の実施形態においては複合板支持部２１と、該複合板支持部２１の前側に段差を設けて形成された剥離手段支持部２２とからなっている。複合板支持部２１は、複合基板を水平状態で支持する支持面２１１を備えている。また、複合板支持部２１の前側（剥離手段支持部２２側）中央部には、後述する剥離部材の移動を許容するための逃げ溝２１２が設けられている。   In the illustrated embodiment, the support base 2 includes a composite plate support portion 21 and a peeling means support portion 22 formed with a step on the front side of the composite plate support portion 21. The composite plate support unit 21 includes a support surface 211 that supports the composite substrate in a horizontal state. Further, an escape groove 212 for allowing movement of a peeling member, which will be described later, is provided in the central portion of the front side (peeling means support portion 22 side) of the composite plate support portion 21.

このように形成された支持基台２の支持面２１１上に側面支持手段３が配設される。図示の実施形態における側面支持手段３は、２個のローラ３１、３１によって構成される。ローラ３１は、図３に示すように上部大径部３１１と下部小径部３１２とを備え中心部に貫通穴３１３が設けられており、適宜の合成樹脂によって形成されている。このように形成されたローラ３１は、貫通穴３１３に支持ボルト３２を挿通し、支持ボルト３２の先端部に形成された雄ネジ部３２１を支持基台２に形成された雌ネジ２１３に螺合することにより回転可能に支持される。   The side support means 3 is disposed on the support surface 211 of the support base 2 formed in this way. The side support means 3 in the illustrated embodiment is constituted by two rollers 31, 31. As shown in FIG. 3, the roller 31 includes an upper large-diameter portion 311 and a lower small-diameter portion 312, and a through-hole 313 is provided in the central portion, and is formed of an appropriate synthetic resin. The roller 31 thus formed is inserted into the through hole 313 with the support bolt 32, and the male screw portion 321 formed at the tip of the support bolt 32 is screwed into the female screw 213 formed on the support base 2. By doing so, it is supported rotatably.

図１および図２に戻って説明を続けると、上記剥離手段４は、支持基台２および側面支持手段３によって支持された複合基板を剥離する剥離部材４１と、該剥離部材４１を支持基台２の支持面２１１に対して垂直な方向に移動する剥離部材位置付け手段４２と、剥離部材４１を支持基台２および側面支持手段３に支持された複合基板に対して進退せしめる剥離部材進退手段４３とを具備している。剥離部材４１は、外周面に雄ネジ４１１aが形成された剥離部材本体４１１と、該剥離部材本体４１１の一端部に設けられた円錐状の楔部４１２と、剥離部材本体４１１の他端に設けられた回動部４１３とからなっている。   Returning to FIG. 1 and FIG. 2, the description will be continued. The peeling means 4 includes a peeling member 41 for peeling the composite substrate supported by the support base 2 and the side support means 3, and the peeling member 41 as a support base. The peeling member positioning means 42 that moves in a direction perpendicular to the second support surface 211 and the peeling member advance / retreat means 43 that advances and retracts the peeling member 41 with respect to the composite substrate supported by the support base 2 and the side support means 3. It is equipped with. The peeling member 41 includes a peeling member body 411 having a male screw 411a formed on the outer peripheral surface, a conical wedge portion 412 provided at one end of the peeling member body 411, and the other end of the peeling member body 411. And a rotating portion 413.

上記剥離部材位置付け手段４２は、支持基台２の剥離手段支持部２２に配設される案内部材４２１と、該案内部材４２１に沿って上下に移動可能に配設される移動ブロック４２２と、該移動ブロック４２２を案内部材４２１に沿って上下に移動せしめる移動手段４２３とを具備している。案内部材４２１は、上下方向に形成されたT字状の案内溝４２１aを備えており、下端部には後述する取り付けボルトが螺合する２個の雌ネジ穴（図示せず）が設けられている。このように形成された案内部材４２１は、支持基台２の剥離手段支持部２２に設けられた２個の取り付け穴２２１、２２１上に下端面を載置し、剥離手段支持部２２の下側から取り付け穴２２１、２２１を挿通して配設される取り付けボルト４４、４４を図示しない雌ネジ穴に螺合することにより、剥離手段支持部２２上に取り付けられる。なお、剥離手段支持部２２の裏面には、取り付け穴２２１、２２１に対応して取り付けボルト４４、４４の頭部が埋まる凹部が形成されている。   The peeling member positioning means 42 includes a guide member 421 provided on the peeling means support portion 22 of the support base 2, a moving block 422 provided so as to be movable up and down along the guide member 421, Moving means 423 for moving the moving block 422 up and down along the guide member 421 is provided. The guide member 421 includes a T-shaped guide groove 421a formed in the vertical direction, and two female screw holes (not shown) into which a mounting bolt described later is screwed are provided at the lower end portion. Yes. The guide member 421 formed in this way has a lower end surface placed on the two mounting holes 221 and 221 provided in the peeling means support portion 22 of the support base 2, and the lower side of the peeling means support portion 22. The mounting bolts 44, 44 disposed through the mounting holes 221, 221 are screwed into female screw holes (not shown) to be mounted on the peeling means support portion 22. In addition, a recess in which the heads of the mounting bolts 44 and 44 are buried corresponding to the mounting holes 221 and 221 is formed on the back surface of the peeling means supporting portion 22.

上記移動ブロック４２２はT字状に形成されており、案内部材４２１に形成された案内溝４２１aに摺動可能に嵌合する被支持部４２２aと、該被支持部４２２aの側面から突出して形成された剥離部材支持部４２２bとからなっている。被支持部４２２aには、上下方向に貫通する雌ネジ穴４２２cが設けられている。また、剥離部材支持部４２２bには、水平方向に貫通し上記剥離部材４１の剥離部材本体４１１に形成された雄ネジ４１１aと螺合する雌ネジ穴４２２dが設けられている。   The moving block 422 is formed in a T-shape, and is formed with a supported portion 422a slidably fitted in a guide groove 421a formed in the guide member 421, and protruding from a side surface of the supported portion 422a. And a peeling member supporting portion 422b. The supported portion 422a is provided with a female screw hole 422c penetrating in the vertical direction. The peeling member support portion 422b is provided with a female screw hole 422d that penetrates in the horizontal direction and is screwed with a male screw 411a formed in the peeling member main body 411 of the peeling member 41.

上記移動手段４２３は、外周面に上記移動ブロック４２２の被支持部４２２aに設けられた雌ネジ穴４２２cに螺合する雄ネジ４２３aが形成された軸部４２３bと、該軸部４２３bの一端部(下端部)に設けられた被支持部４２３cと、軸部４２３bの他端（上端）に設けられた回動部４２３dとからなっている。このように構成された移動手段４２３は、雄ネジ４２３aが形成された軸部４２３bを移動ブロック４２２の被支持部４２２aに設けられた雌ネジ穴４２２cに螺合する。そして、移動ブロック４２２を案内部材４２１に形成された案内溝４２１aに摺動可能に嵌合するとともに、移動手段４２３の被支持部４２３cを支持基台２の剥離手段支持部２２に設けられた支持穴２２２（図２参照）に挿通し、被支持部４２３cを剥離手段支持部２２に配設される軸受４５によって回転可能に支持する。従って、移動手段４２３の回動部４２３dを把持して軸部４２３bを一方向に回動することにより移動ブロック４２２を案内溝４２１aに沿って上方に移動し、軸部４２３bを他方向に回動することにより移動ブロック４２２を案内溝４２１aに沿って下方に移動することができる。なお、剥離手段支持部２２裏面には、支持穴２２２に対応して軸受４５が圧入される凹部が形成されている。   The moving means 423 includes a shaft portion 423b having a male screw 423a screwed into a female screw hole 422c provided in the supported portion 422a of the moving block 422 on the outer peripheral surface, and one end portion of the shaft portion 423b ( It consists of a supported portion 423c provided at the lower end portion and a rotating portion 423d provided at the other end (upper end) of the shaft portion 423b. The moving means 423 configured in this manner screws the shaft portion 423b on which the male screw 423a is formed into the female screw hole 422c provided in the supported portion 422a of the moving block 422. The moving block 422 is slidably fitted in a guide groove 421a formed in the guide member 421, and the supported portion 423c of the moving means 423 is supported on the peeling means supporting portion 22 of the supporting base 2. The supported portion 423c is inserted into the hole 222 (see FIG. 2) and is rotatably supported by a bearing 45 disposed in the peeling means supporting portion 22. Accordingly, by grasping the rotating portion 423d of the moving means 423 and rotating the shaft portion 423b in one direction, the moving block 422 is moved upward along the guide groove 421a, and the shaft portion 423b is rotated in the other direction. By doing so, the moving block 422 can be moved downward along the guide groove 421a. In addition, a concave portion into which the bearing 45 is press-fitted corresponding to the support hole 222 is formed on the back surface of the peeling means support portion 22.

上記剥離部材４１は、外周面に雄ネジ４１１aが形成された剥離部材本体４１１を移動ブロック４２２の剥離部材支持部４２２bに形成された雌ネジ穴４２２dに螺合する。そして、回動部４１３を把持して剥離部材本体４１１を一方向に回動することにより剥離部材本体４１１の一端に設けられた円錐状の楔部４１２を上記側面支持手段３側に前進し、剥離部材本体４１１を他方向に回動することにより剥離部材本体４１１の一端に設けられた円錐状の楔部４１２を上記側面支持手段３側と反対側に後退することができる。従って、剥離部材４１の剥離部材本体４１１の外周面に形成された外周面に雄ネジ４１１aと剥離部材本体４１１の他端に設けられた回動部４１３および移動ブロック４２２の剥離部材支持部４２２bに形成された雌ネジ穴４２２dは、剥離部材４１の楔部４１２を支持基台２の支持面２１１および側面支持手段３に支持された複合基板に対して進退せしめる剥離部材進退手段４３として機能する。   In the peeling member 41, a peeling member body 411 having a male screw 411a formed on the outer peripheral surface is screwed into a female screw hole 422d formed in the peeling member support portion 422b of the moving block 422. Then, the conical wedge part 412 provided at one end of the peeling member main body 411 is advanced to the side supporting means 3 side by gripping the rotating part 413 and rotating the peeling member main body 411 in one direction. By rotating the peeling member main body 411 in the other direction, the conical wedge portion 412 provided at one end of the peeling member main body 411 can be retracted to the side opposite to the side supporting means 3 side. Therefore, on the outer peripheral surface formed on the outer peripheral surface of the peeling member main body 411 of the peeling member 41, the rotating part 413 provided on the other end of the peeling member main body 411 and the peeling member support part 422 b of the moving block 422 are provided. The formed female screw hole 422d functions as a peeling member advancing / retreating means 43 for advancing / retreating the wedge portion 412 of the peeling member 41 with respect to the composite substrate supported by the support surface 211 of the support base 2 and the side surface support means 3.

図１を参照して説明を続けると、図示の実施形態における分離装置は、上記支持基台２の支持面２１１および側面支持手段３に支持された後述する複合基板を構成する第１の基板と第２の基板との境界部を検出して剥離部材４１の楔部４１２と位置合わせする検出手段５を具備している。この検出手段５は、支持基台２の支持面２１１および側面支持手段３に支持された後述する複合基板の側面を撮像する撮像手段５１と、該撮像手段５１によって撮像された画像を表示する表示手段５２とからなっている。撮像手段５１は、上記剥離部材４１が装着された移動ブロック４２２の剥離部材支持部４２２bに楔部４１２と同一の高さ位置に装着されている。そして、表示手段５２には、撮像手段５１による撮像画像の上下方向中心位置である楔部４１２に対応するヘアーライン５２１が表示される。   Continuing the description with reference to FIG. 1, the separation apparatus in the illustrated embodiment includes a first substrate constituting a composite substrate (described later) supported by the support surface 211 and the side support means 3 of the support base 2. Detection means 5 is provided for detecting a boundary portion with the second substrate and aligning with the wedge portion 412 of the peeling member 41. The detection unit 5 includes an imaging unit 51 that captures an image of a side surface of a composite substrate (described later) supported by the support surface 211 and the side surface support unit 3 of the support base 2, and a display that displays an image captured by the imaging unit 51. Means 52. The imaging means 51 is attached to the peeling member support portion 422b of the moving block 422 to which the peeling member 41 is attached at the same height as the wedge portion 412. The display unit 52 displays a hairline 521 corresponding to the wedge portion 412 that is the center position in the vertical direction of the image captured by the imaging unit 51.

図示の実施形態における分離装置は以上のように構成されており、以下その作用について説明する。
図４には、上述した分離装置によって分離される複合基板の斜視図が示されている。
図４に示す複合基板６は、光デバイスウエーハ６１と移設基板６２とからなっている。光デバイスウエーハ６１は、サファイア基板や炭化珪素等のエピタキシー基板６１１（第１の基板）の表面にバッファー層６１２を介して光デバイス層が形成されている。このように形成された光デバイスウエーハ６１のエピタキシー基板６１１（第１の基板）の光デバイス層の表面にモリブデン(Mo)、銅(Cu)、シリコン(Si)等からなる移設基板６２（第２の基板）が金錫(AuSn)等の接合金属層を介して接合されている。このように構成された複合基板６は、エピタキシー基板の裏面側からバッファー層６１２で吸収される波長（例えば２４８nm）のレーザー光線が照射されバッファー層６１２が破壊されている。 The separation device in the illustrated embodiment is configured as described above, and the operation thereof will be described below.
FIG. 4 shows a perspective view of the composite substrate separated by the separation device described above.
The composite substrate 6 shown in FIG. 4 includes an optical device wafer 61 and a transfer substrate 62. In the optical device wafer 61, an optical device layer is formed on the surface of an epitaxial substrate 611 (first substrate) such as a sapphire substrate or silicon carbide via a buffer layer 612. On the surface of the optical device layer of the epitaxial substrate 611 (first substrate) of the optical device wafer 61 thus formed, a transfer substrate 62 (second substrate) made of molybdenum (Mo), copper (Cu), silicon (Si), or the like. Are bonded via a bonding metal layer such as gold tin (AuSn). The composite substrate 6 configured in this manner is irradiated with a laser beam having a wavelength (for example, 248 nm) absorbed by the buffer layer 612 from the back side of the epitaxy substrate, and the buffer layer 612 is destroyed.

上述した分離装置を用いて複合基板６をエピタキシー基板６１１（第１の基板）と光デバイス層を含む移設基板６２（第２の基板）に分離するには、複合基板６の移設基板６２（第２の基板）側を支持基台２の支持面２１１に載置するとともに、図５に示すように複合基板６の外周側面を側面支持手段３を構成する２個のローラ３１、３１に当接する。このようにして複合基板６の外周側面が当接せしめられた２個のローラ３１、３１は、複合基板６の外周側面を回動可能に支持したことになる。   In order to separate the composite substrate 6 into the epitaxy substrate 611 (first substrate) and the transfer substrate 62 (second substrate) including the optical device layer using the separation apparatus described above, the transfer substrate 62 (first substrate) of the composite substrate 6 is used. 2 side) is placed on the support surface 211 of the support base 2, and the outer peripheral side surface of the composite substrate 6 is brought into contact with the two rollers 31, 31 constituting the side support means 3, as shown in FIG. . Thus, the two rollers 31 and 31 with which the outer peripheral side surface of the composite substrate 6 is brought into contact support the outer peripheral side surface of the composite substrate 6 so as to be rotatable.

上述したように複合基板６を支持基台２の支持面２１１および側面支持手段３を構成する２個のローラ３１、３１によって支持したならば、剥離部材位置付け手段４２を構成する移動手段４２３の回動部４２３dを一方向または他方向に回動することによりを移動ブロック４２２を上方または下方に移動し、図５に示すように移動ブロック４２２に装着された剥離部材４１の楔部４１２の先端をエピタキシー基板６１１（第１の基板）と光デバイス層を含む移設基板６２（第２の基板）との境界部であるバッファー層６１２の高さ位置に位置付ける（剥離部材位置付け工程）。この剥離部材位置付け工程を実施する際には、検出手段５を作動して撮像手段５１によって複合基板６の外周側面を撮像した画像を表示手段５２に表示し、バッファー層６１２がヘアーライン５２１（図１参照）と合致する位置に位置付けることにより、剥離部材４１の楔部４１２の先端をエピタキシー基板６１１（第１の基板）と光デバイス層を含む移設基板６２（第２の基板）との境界部であるバッファー層６１２の高さ位置に容易に位置付けることができる。   As described above, if the composite substrate 6 is supported by the two rollers 31 and 31 constituting the support surface 211 and the side surface support means 3 of the support base 2, the rotation of the moving means 423 constituting the peeling member positioning means 42 is performed. By moving the moving portion 423d in one direction or the other direction, the moving block 422 is moved upward or downward, and the tip of the wedge portion 412 of the peeling member 41 attached to the moving block 422 is moved as shown in FIG. Positioning at the height position of the buffer layer 612 that is the boundary between the epitaxy substrate 611 (first substrate) and the transfer substrate 62 (second substrate) including the optical device layer (peeling member positioning step). When performing this peeling member positioning process, the detection means 5 is actuated and an image obtained by imaging the outer peripheral side surface of the composite substrate 6 by the imaging means 51 is displayed on the display means 52, and the buffer layer 612 is the hairline 521 (FIG. 1). The tip of the wedge portion 412 of the peeling member 41 is positioned at a boundary portion between the epitaxy substrate 611 (first substrate) and the transfer substrate 62 (second substrate) including the optical device layer. The buffer layer 612 can be easily positioned at the height position.

次に、剥離部材４１の回動部４１３を一方向に回動して剥離部材４１を複合基板６側に向けて前進させ、楔部４１２の先端をエピタキシー基板６１１（第１の基板）と光デバイス層を含む移設基板６２（第２の基板）との境界部であるバッファー層６１２に１〜２mm進入せしめる（楔進入工程）。   Next, the rotating portion 413 of the peeling member 41 is rotated in one direction to advance the peeling member 41 toward the composite substrate 6 side, and the tip of the wedge portion 412 is moved to the epitaxy substrate 611 (first substrate) and light. The buffer layer 612 that is a boundary with the transfer substrate 62 (second substrate) including the device layer is entered by 1 to 2 mm (wedge entry step).

上述した楔進入工程を実施したならば、剥離部材４１の回動部４１３を他方向に回動して剥離部材４１を後退させ、楔部４１２をエピタキシー基板６１１（第１の基板）と光デバイス層を含む移設基板６２（第２の基板）との境界部であるバッファー層６１２から退避させる（楔退避工程）。   If the wedge entering step described above is performed, the rotating portion 413 of the peeling member 41 is rotated in the other direction to retract the peeling member 41, and the wedge portion 412 is moved to the epitaxy substrate 611 (first substrate) and the optical device. The substrate is retracted from the buffer layer 612 that is a boundary with the transfer substrate 62 (second substrate) including the layer (wedge retracting step).

上述した楔退避工程を実施したならば、複合基板６を２個のローラ３１、３１に沿って所定角度（例えば３０度）回動する（複合基板位置付け工程）。   If the wedge retracting process described above is performed, the composite substrate 6 is rotated along the two rollers 31 and 31 by a predetermined angle (for example, 30 degrees) (composite substrate positioning process).

以後、上記楔進入工程と楔退避工程および複合基板位置付け工程を順次実施することにより、楔部４１２をエピタキシー基板６１１（第１の基板）と光デバイス層を含む移設基板６２（第２の基板）との外周部における複数個所において剥離力が作用するため、エピタキシー基板６１１（第１の基板）を容易に剥離することができる。この結果、エピタキシー基板６１１（第１の基板）の表面にバファー層６１２を介して形成された光デバイス層は、移設基板６２（第２の基板）に移設されたことになる。   Thereafter, by sequentially performing the wedge entering step, wedge retracting step, and composite substrate positioning step, the wedge portion 412 is transferred to the epitaxy substrate 611 (first substrate) and the transfer substrate 62 (second substrate) including the optical device layer. Therefore, the epitaxy substrate 611 (first substrate) can be easily peeled off. As a result, the optical device layer formed on the surface of the epitaxy substrate 611 (first substrate) via the buffer layer 612 is transferred to the transfer substrate 62 (second substrate).

以上、本発明を図示の実施形態に基づいて説明したが、本発明は実施形態のみに限定されるものではなく、本発明の趣旨の範囲で種々の変形は可能である。例えば、上述した実施形態においては剥離部材位置付け手段４２を構成する移動手段４２３の回動部４２３d、および剥離部材４１の回動部４１３を手動で回動する例を示したが、回動部４２３dおよび回動部４１３にパルスモータを装着するとともに支持基台２の支持面２１１に複合基板６を吸引保持する回転可能なチャックテーブルを配設して自動的に複合基板６を第１の基板と第２の基板に剥離するように構成してもよい。   Although the present invention has been described based on the illustrated embodiment, the present invention is not limited to the embodiment, and various modifications are possible within the scope of the gist of the present invention. For example, in the above-described embodiment, an example in which the turning unit 423d of the moving unit 423 and the turning unit 413 of the peeling member 41 constituting the peeling member positioning unit 42 are manually rotated has been described. In addition, a pulse motor is attached to the rotation unit 413 and a rotatable chuck table for sucking and holding the composite substrate 6 is disposed on the support surface 211 of the support base 2 to automatically attach the composite substrate 6 to the first substrate. You may comprise so that it may peel to a 2nd board | substrate.

２：支持基台
３：側面支持手段
３１：ローラ
４：剥離手段
４１：剥離部材
４１２：円錐状の楔部
４２：剥離部材位置付け手段
４２１：案内部材
４２２：移動ブロック
４２３：移動手段
５：検出手段
５１：撮像手段
５２：表示手段
６：複合基板 2: Support base 3: Side support means 31: Roller 4: Peeling means 41: Peeling member 412: Conical wedge portion 42: Peeling member positioning means 421: Guide member 422: Moving block 423: Moving means 5: Detection means 51: Imaging means 52: Display means 6: Composite substrate

Claims (2)

第１の基板と第２の基板とが接合された複合基板を第１の基板と第２の基板とに分離する分離装置であって、
複合基板を水平状態で支持する支持面を備えた支持基台と、
該支持基台に配設され該支持面に載置された複合基板の外周側面を支持する側面支持手段と、
該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第１の基板と第２の基板との境界部に挿入して第１の基板と第２の基板とを剥離する剥離手段と、を具備し、
該剥離手段は、該側面支持手段と対向する位置に該支持基台の該支持面と平行状態で配設され第１の基板と第２の基板との境界部に挿入する楔部を備えた剥離部材と、該剥離部材を該支持基台の該支持面に対して垂直な方向に移動して該楔部を第１の基板と第２の基板との境界部に位置付ける剥離部材位置付け手段と、該剥離部材の該楔部を該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第１の基板と第２の基板との境界部に進退せしめる剥離部材進退手段と、を具備しており、
該側面支持手段は、少なくとも２個のローラによって構成され、該２個のローラは上部大径部と下部小径部とを備え、複合基板の外周側面を回動可能に支持する、
ことを特徴とする分離装置。 A separation device that separates a composite substrate in which a first substrate and a second substrate are bonded into a first substrate and a second substrate,
A support base having a support surface for supporting the composite substrate in a horizontal state;
Side support means for supporting the outer peripheral side surface of the composite substrate disposed on the support base and placed on the support surface;
The first substrate and the second substrate are inserted into a boundary portion between the first substrate and the second substrate constituting the composite substrate supported by the support surface and the side support means of the support base. A peeling means for peeling,
The peeling means includes a wedge portion that is disposed in parallel with the support surface of the support base at a position facing the side surface support means and is inserted into a boundary portion between the first substrate and the second substrate. A peeling member, and peeling member positioning means for moving the peeling member in a direction perpendicular to the support surface of the support base and positioning the wedge portion at a boundary portion between the first substrate and the second substrate. The advancing and retreating of the peeling member causes the wedge portion of the peeling member to advance and retreat to the boundary portion between the first substrate and the second substrate constituting the composite substrate supported by the support surface of the support base and the side surface supporting means. has been and means, the,
The side support means is composed of at least two rollers, and the two rollers include an upper large diameter portion and a lower small diameter portion, and rotatably support the outer peripheral side surface of the composite substrate.
Separation device characterized by that. 該支持基台の該支持面および該側面支持手段に支持された複合基板を構成する第１の基板と第２の基板との境界部を検出して剥離部材の楔部と位置合わせする検出手段を備えている、請求項１の分離装置。Detection means for detecting a boundary portion between the first substrate and the second substrate constituting the composite substrate supported by the support surface of the support base and the side surface support means and aligning with the wedge portion of the peeling member The separation device of claim 1, comprising:
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