JP6092217B2 - 背面に疎水性コーティングを有する薄膜太陽電池モジュール、その製造方法、その使用および疎水性コーティングの使用 - Google Patents
背面に疎水性コーティングを有する薄膜太陽電池モジュール、その製造方法、その使用および疎水性コーティングの使用 Download PDFInfo
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- JP6092217B2 JP6092217B2 JP2014527542A JP2014527542A JP6092217B2 JP 6092217 B2 JP6092217 B2 JP 6092217B2 JP 2014527542 A JP2014527542 A JP 2014527542A JP 2014527542 A JP2014527542 A JP 2014527542A JP 6092217 B2 JP6092217 B2 JP 6092217B2
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- solar cell
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- film solar
- hydrophobic coating
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- 238000000576 coating method Methods 0.000 title claims description 79
- 239000011248 coating agent Substances 0.000 title claims description 78
- 230000002209 hydrophobic effect Effects 0.000 title claims description 73
- 239000010409 thin film Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 115
- 238000009792 diffusion process Methods 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 15
- 239000003513 alkali Substances 0.000 claims description 14
- 150000001343 alkyl silanes Chemical class 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000002318 adhesion promoter Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000005361 soda-lime glass Substances 0.000 claims description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- -1 titanium nitride compound Chemical class 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007848 Bronsted acid Substances 0.000 claims description 2
- 239000003341 Bronsted base Substances 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 230000009471 action Effects 0.000 claims description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 2
- 230000006837 decompression Effects 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims 1
- 239000011877 solvent mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 160
- 150000001282 organosilanes Chemical class 0.000 description 15
- 125000000217 alkyl group Chemical group 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 239000004721 Polyphenylene oxide Substances 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 229920000570 polyether Polymers 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 208000028659 discharge Diseases 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 240000002329 Inga feuillei Species 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000005341 toughened glass Substances 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 238000011074 autoclave method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004812 Fluorinated ethylene propylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920009441 perflouroethylene propylene Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
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Description
少なくとも1つの疎水性コーティングが背面上に設けられた基板、
基板の前面上の太陽電池層構造体、
少なくとも1つの中間層が設けられた背面を介して、基板の前面に面結合されたカバー板。
(a)基板の前面に太陽電池層構造体を形成し、
(b)加熱、減圧および/または加圧の作用下で、基板の前面を、中間層を介してカバー板の背面に結合し、
(c)疎水性コーティングを基板の背面に形成する。
基板1、太陽電池層構造体2、カバー板3、中間層4、導電性固定部材6および疎水性コーティング5を有する薄膜太陽電池モジュールの試料を作成した。基板1およびカバー板3は、ソーダ石灰ガラスからなり、幅30cm、厚さ2.9mmを有していた。太陽電池層構造体2は、背面電極層10、光起電性吸収層11、バッファ層13および前面電極層12をこの並びで有する。背面電極層10は、モリブデンを含み、層厚さ300nmであった。光起電性吸収層11は、ナトリウムドープされたCu(InGa)(SSe)2を含み、層厚さ2μmであった。バッファ層13は、カドミウム硫化物(CdS)を含み、厚さ約20nmであった。前面電極層12は、アルミニウムドープされた亜鉛酸化物(AZO)を含み、層厚さ1μmであった。太陽電池層構造体2は、基板1の端部領域で幅15mmで積層が除去され、長さおよび幅は27cmであった。太陽電池層構造体2は、個別の光起電性領域に分割されておらず、すなわち、1つの太陽電池セルを構成していた。太陽電池層構造体2は、基板1の前面(III)に背面電極層10を介して結合されている。カバー板3の背面(II)は、基板1の前面(III)に中間層4を介して結合されている。中間層4は、ポリビニルブチラール(PVB)を含み、層厚さ0.76mmであった。薄膜太陽電池モジュールの外周端部は、アルミニウムからなる導電性固定部材6によって枠付けされていた。
実施例2を、実施例1と同じに行った。加えて、アルカリイオンに対する拡散バリア層7を基板1と疎水性コーティング5との間に設けた。疎水性コーティング5および拡散バリア層7の組成および層厚さを表1に示す。拡散バリア層7によって、薄膜太陽電池モジュールの製造工程において基板1の背面(IV)でのアルカリイオンの堆積は低減可能であった。したがって、基板1の表面導電性をさらに低減させることができた。
比較実施例を実施例1と同じに行った。実施例1と異なり、疎水性コーティング5を基板1の背面(IV)に設けなかった。試験セル内の凝縮した湿分による基板1の背面(IV)上の連続した水の膜の形成を防ぐことはできなかった。したがって、基板1は、本発明における実施例におけるよりもより高い表面導電性を示した。
Claims (25)
- 背面に疎水性コーティングを有する薄膜太陽電池モジュールであって、少なくとも、
少なくとも1つの疎水性コーティング(5)が背面(IV)上に設けられた基板(1)と、
前記基板(1)の前面(III)上の太陽電池層構造体(2)と、
少なくとも1つの中間層(4)が設けられた背面(II)を介して、前記基板(1)の前面(III)に面結合されたカバー板(3)と、
前記薄膜太陽電池モジュールの外周端部を枠付けする、グランドに対応する電位を有する導電性の固定部材(6)と、
を備え、
前記基板(1)は、アルカリ成分の割合が0.1wt%〜20wt%であるソーダ石灰ガラスを少なくとも含み、前記疎水性コーティング(5)と前記基板(1)との間にアルカリイオンに対する拡散バリア層(7)が設けられている、
ことを特徴とする薄膜太陽電池モジュール。 - 前記疎水性コーティング(5)は、前記導電性の固定部材(6)によって覆われていない前記基板(1)の背面(IV)の領域全体を覆っている、請求項1記載の薄膜太陽電池モジュール。
- 前記疎水性コーティング(5)は、少なくとも1つのアルキルシランを含む、請求項1または2記載の薄膜太陽電池モジュール。
- 前記疎水性コーティング(5)は、フッ素化アルキルシランを含む、請求項3記載の薄膜太陽電池モジュール。
- 前記疎水性コーティング(5)は、0.5nm〜50nmの層厚さを有する、請求項1から4のいずれか1項記載の薄膜太陽電池モジュール。
- 前記拡散バリア層(7)は、少なくともシリコン窒化物、シリコン酸窒化物、シリコン酸化物、アルミニウム窒化物および/またはアルミニウム酸窒化物を含む、請求項1〜5のいずれか1項記載の薄膜太陽電池モジュール。
- 前記拡散バリア層(7)は、3nm〜300nmの層厚さを有する、請求項1〜6のいずれか1項記載の薄膜太陽電池モジュール。
- 前記拡散バリア層(7)は、金属をさらに含む、請求項1〜7のいずれか1項記載の薄膜太陽電池モジュール。
- 前記基板は、厚さ1.5mm〜10mmのソーダ石灰ガラスを少なくとも含む、請求項1〜8のいずれか1項記載の薄膜太陽電池モジュール。
- アルカリ成分の割合は、10wt%〜16wt%である、請求項1記載の薄膜太陽電池モジュール。
- 前記太陽電池層構造体(2)は、前面電極(12)と背面電極(10)との間に設けられた少なくとも1つの光起電性吸収層(11)を有し、
前記背面電極(10)は少なくとも1種の金属を含み、
前記前面電極(12)は、少なくとも1種のn導電性半導体を含み、
前記光起電性吸収層(11)は、少なくともアモルファス、マイクロモルフまたは多結晶シリコン、カドミウムテルル化物(CdTe)、ガリウムヒ化物(GaAs)あるいは銅インジウム(ガリウム)硫黄/セレン(CI(G)S)を含む、
請求項1〜10のいずれか1項記載の薄膜太陽電池モジュール。 - 前記背面電極(10)は、モリブデン、チタン窒化物化合物またはタンタル窒化物化合物を含む、請求項11記載の薄膜太陽電池モジュール。
- 前記前面電極(12)は、アルミニウムドープされた亜鉛酸化物またはインジウムスズ酸化物を含む、請求項11または12記載の薄膜太陽電池モジュール。
- 請求項1から13のいずれか1項に記載の、背面に疎水性コーティングを有する薄膜太陽電池モジュールの製造方法であって、少なくとも、
(a)基板(1)の前面(III)に太陽電池層構造体(2)を形成し、
(b)加熱、減圧および/または加圧の作用下で、前記基板(1)の前面(III)を、中間層(4)を介してカバー板(3)の背面(II)に結合し、
(c)前記薄膜太陽電池モジュールの外周端部を枠付けする、グランドに対応する電位を有する導電性の固定部材(6)を取り付け、
(d)疎水性コーティング(5)を前記基板(1)の背面(IV)に形成する、
ことを特徴とする方法。 - 前記疎水性コーティング(5)は、前記導電性の固定部材(6)によって覆われていない前記基板(1)の背面(IV)の領域全体を覆っている、請求項14記載の方法。
- ステップ(d)において、少なくとも0.05wt%〜5wt%の、1、2または3個の加水分解性置換基をシリコン原子上に有するアルキルシランと溶媒とを含む溶液から、前記疎水性コーティング(5)を形成する、請求項14または15記載の方法。
- 前記アルキルシランは、フッ素化アルキルシランである、請求項16記載の方法。
- 前記加水分解性置換基は、アルコキシ基またはハロゲン原子である、請求項16または17記載の方法。
- 前記溶媒は、アルコールおよび水の混合物を少なくとも含み、前記溶媒の混合物中の水の割合は、3vol%〜20vol%である、請求項16から18のいずれか1項記載の方法。
- 前記溶液は、0.005wt%〜20wt%のブレンステッド酸またはブレンステッド塩基を触媒として含む、請求項16から19のいずれか1項記載の方法。
- 処理ステップ(d)の前に、接着促進剤(9)を前記基板(1)の背面(IV)に塗布する、請求項14から20のいずれか1項記載の方法。
- 前記接着促進剤(9)は、少なくともテトラヒドロキシシラン、テトラアルコキシシランおよび/またはテトラハロゲンシランを含む、請求項21記載の方法。
- 処理ステップ(a)の前、処理ステップ(b)の前、または、処理ステップ(d)の前に、拡散バリア層(7)を前記基板(1)の背面(IV)に形成する、請求項16から22のいずれか1項記載の方法。
- 少なくとも−100Vのグランド電位に対する負電位での、請求項1から13のいずれか1項記載の薄膜太陽電池モジュールの使用。
- 請求項1から13のいずれか1項記載の薄膜太陽電池モジュールの、光が入射する側とは反対側の表面への疎水性コーティングの使用。
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