JP6076223B2 - 電力用半導体素子の駆動回路 - Google Patents

電力用半導体素子の駆動回路 Download PDF

Info

Publication number
JP6076223B2
JP6076223B2 JP2013183887A JP2013183887A JP6076223B2 JP 6076223 B2 JP6076223 B2 JP 6076223B2 JP 2013183887 A JP2013183887 A JP 2013183887A JP 2013183887 A JP2013183887 A JP 2013183887A JP 6076223 B2 JP6076223 B2 JP 6076223B2
Authority
JP
Japan
Prior art keywords
power semiconductor
semiconductor element
unit
gate
charge amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013183887A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015053749A5 (https=
JP2015053749A (ja
Inventor
堀口　剛司
剛司 堀口
中山　靖
靖 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013183887A priority Critical patent/JP6076223B2/ja
Publication of JP2015053749A publication Critical patent/JP2015053749A/ja
Publication of JP2015053749A5 publication Critical patent/JP2015053749A5/ja
Application granted granted Critical
Publication of JP6076223B2 publication Critical patent/JP6076223B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Protection Of Static Devices (AREA)
  • Power Conversion In General (AREA)
JP2013183887A 2013-09-05 2013-09-05 電力用半導体素子の駆動回路 Active JP6076223B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013183887A JP6076223B2 (ja) 2013-09-05 2013-09-05 電力用半導体素子の駆動回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013183887A JP6076223B2 (ja) 2013-09-05 2013-09-05 電力用半導体素子の駆動回路

Publications (3)

Publication Number Publication Date
JP2015053749A JP2015053749A (ja) 2015-03-19
JP2015053749A5 JP2015053749A5 (https=) 2015-12-17
JP6076223B2 true JP6076223B2 (ja) 2017-02-08

Family

ID=52702392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013183887A Active JP6076223B2 (ja) 2013-09-05 2013-09-05 電力用半導体素子の駆動回路

Country Status (1)

Country Link
JP (1) JP6076223B2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6773499B2 (ja) * 2016-09-21 2020-10-21 株式会社日立製作所 半導体駆動装置ならびにこれを用いた電力変換装置
KR102578357B1 (ko) 2016-12-16 2023-09-15 현대자동차주식회사 회로 소자 보호 회로, 상기 회로 소자 보호 회로가 설치된 차량, 회로 소자 보호 방법 및 차량의 제어 방법
JP6300964B1 (ja) * 2017-01-13 2018-03-28 三菱電機株式会社 電力変換装置
JP6264491B1 (ja) * 2017-05-11 2018-01-24 富士電機株式会社 短絡検出装置および装置
WO2018229856A1 (ja) 2017-06-13 2018-12-20 三菱電機株式会社 半導体素子の駆動回路
WO2019021590A1 (ja) 2017-07-28 2019-01-31 三菱電機株式会社 電力用半導体素子の駆動回路
CN110521122B (zh) 2017-10-17 2023-06-13 富士电机株式会社 过电流检测装置、控制装置及过电流检测方法
JP7087373B2 (ja) 2017-12-20 2022-06-21 富士電機株式会社 半導体素子の電流検出回路及び電流検出方法
US10845428B2 (en) 2018-06-01 2020-11-24 Infineon Technologies Ag Method and circuit for detecting a loss of a bondwire in a power switch
CN113169659B (zh) * 2018-12-11 2023-08-04 三菱电机株式会社 电力用半导体元件的驱动电路以及使用其的电力用半导体模块
JP7408934B2 (ja) 2019-07-03 2024-01-09 富士電機株式会社 半導体素子の電流検出回路及び電流検出方法、並びに半導体モジュール
JP7346944B2 (ja) 2019-07-03 2023-09-20 富士電機株式会社 半導体素子の電流検出回路及び電流検出方法、並びに半導体モジュール
JP7431528B2 (ja) * 2019-08-08 2024-02-15 株式会社東芝 半導体増幅回路
CN111474460B (zh) * 2020-05-29 2022-03-22 中煤科工集团重庆研究院有限公司 Igbt栅极电阻故障检测系统
US12149240B2 (en) * 2020-08-25 2024-11-19 Mitsubishi Electric Corporation Drive control circuit for power semiconductor element, power semiconductor module, and power converter
US12206401B2 (en) 2020-09-07 2025-01-21 Mitsubishi Electric Corporation Drive device to drive semiconductor element, semiconductor device, and power conversion device
WO2022054452A1 (ja) 2020-09-11 2022-03-17 富士電機株式会社 過電流検出回路および駆動回路
JP7414700B2 (ja) * 2020-12-01 2024-01-16 株式会社東芝 半導体装置
CN112803373B (zh) * 2020-12-14 2024-05-07 株洲中车时代半导体有限公司 功率半导体器件保护电路、控制方法、存储介质以及设备
CN112967695A (zh) * 2021-03-19 2021-06-15 武汉京东方光电科技有限公司 液晶显示模组的驱动装置、驱动方法和液晶显示装置
CN113938118B (zh) * 2021-10-19 2025-03-25 中国科学院上海微系统与信息技术研究所 去饱和短路保护电路、功率器件短路保护电路及测试电路
FR3128995B1 (fr) * 2021-11-08 2023-10-27 Thales Sa Détection et protection de court-circuit d’un composant à grille isolée par monitoring et contrôle de la tension de grille.
CN114660433B (zh) * 2022-03-10 2026-01-06 清华大学 一种碳化硅mosfet短路过流组合检测方法和系统
KR102897945B1 (ko) * 2024-08-30 2025-12-09 한국전자기술연구원 듀얼 액티브 브릿지 컨버터를 제어하기 위한 장치 및 이를 위한 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112007000857B4 (de) * 2006-04-06 2013-08-14 Mitsubishi Electric Corp. Drei Treiberschaltungen für Halbleiterelemente mit Kurzschlusserfassung
JP5721137B2 (ja) * 2011-05-18 2015-05-20 国立大学法人九州工業大学 半導体装置の短絡保護装置

Also Published As

Publication number Publication date
JP2015053749A (ja) 2015-03-19

Similar Documents

Publication Publication Date Title
JP6076223B2 (ja) 電力用半導体素子の駆動回路
JP6482665B2 (ja) 電力用半導体素子の駆動制御回路
CN109314510B (zh) 开关元件的驱动控制装置
US7602595B2 (en) Semiconductor device
US8466734B2 (en) Gate driving circuit for power semiconductor element
CN104170255B (zh) 过电流检测装置及使用其的智能功率模块
KR101017656B1 (ko) 동기 정류형 스위칭 레귤레이터
CN101189795B (zh) 电源控制器和半导体装置
JP5958317B2 (ja) 過電流検出装置及びそれを備える半導体駆動装置
US20190386654A1 (en) Configurable integrated desaturation filter
CN114667681B (zh) 栅极驱动电路
US20130314834A1 (en) Semiconductor driving circuit and semiconductor device
US11387642B2 (en) Overcurrent sense control of semiconductor device
JP3808265B2 (ja) 電源供給制御装置及び電源供給制御方法
CN105027441A (zh) 功率器件的驱动电路
JP6925518B2 (ja) 電力用半導体素子の駆動装置
JP2014190773A (ja) 過電流検出装置及びそれを備える半導体駆動装置
US12132392B2 (en) Power conversion device having semiconductor switching element
US9042066B2 (en) Output stage with short-circuit protection
JP6068310B2 (ja) 異常検出保護回路および異常検出保護回路の制御方法
JP6425864B1 (ja) 電力用半導体素子の駆動回路
JP6024498B2 (ja) 半導体駆動装置
CN105874690B (zh) 功率半导体元件的电流检测装置
AU2010244995B2 (en) Method and apparatus for protecting transistors
CN102655405B (zh) 半导体元件的控制

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151027

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151027

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160629

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160705

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160822

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170110

R150 Certificate of patent or registration of utility model

Ref document number: 6076223

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250