JP6061129B2 - 放射線検出器の製造方法 - Google Patents

放射線検出器の製造方法 Download PDF

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Publication number
JP6061129B2
JP6061129B2 JP2012202723A JP2012202723A JP6061129B2 JP 6061129 B2 JP6061129 B2 JP 6061129B2 JP 2012202723 A JP2012202723 A JP 2012202723A JP 2012202723 A JP2012202723 A JP 2012202723A JP 6061129 B2 JP6061129 B2 JP 6061129B2
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Japan
Prior art keywords
layer
heat treatment
radiation detector
conversion layer
cdte
Prior art date
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Expired - Fee Related
Application number
JP2012202723A
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English (en)
Japanese (ja)
Other versions
JP2014059155A (ja
JP2014059155A5 (enExample
Inventor
敏 徳田
敏 徳田
吉牟田　利典
利典 吉牟田
弘之 岸原
弘之 岸原
正知 貝野
正知 貝野
聖菜 吉松
聖菜 吉松
貴弘 土岐
貴弘 土岐
佐藤　敏幸
敏幸 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
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Shimadzu Corp
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Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP2012202723A priority Critical patent/JP6061129B2/ja
Priority to US13/784,117 priority patent/US8895341B2/en
Publication of JP2014059155A publication Critical patent/JP2014059155A/ja
Publication of JP2014059155A5 publication Critical patent/JP2014059155A5/ja
Application granted granted Critical
Publication of JP6061129B2 publication Critical patent/JP6061129B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/022—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2012202723A 2012-09-14 2012-09-14 放射線検出器の製造方法 Expired - Fee Related JP6061129B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012202723A JP6061129B2 (ja) 2012-09-14 2012-09-14 放射線検出器の製造方法
US13/784,117 US8895341B2 (en) 2012-09-14 2013-03-04 Method of manufacturing radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012202723A JP6061129B2 (ja) 2012-09-14 2012-09-14 放射線検出器の製造方法

Publications (3)

Publication Number Publication Date
JP2014059155A JP2014059155A (ja) 2014-04-03
JP2014059155A5 JP2014059155A5 (enExample) 2015-08-20
JP6061129B2 true JP6061129B2 (ja) 2017-01-18

Family

ID=50274886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012202723A Expired - Fee Related JP6061129B2 (ja) 2012-09-14 2012-09-14 放射線検出器の製造方法

Country Status (2)

Country Link
US (1) US8895341B2 (enExample)
JP (1) JP6061129B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3281039B1 (en) * 2015-04-07 2020-03-11 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor x-ray detector
US10007009B2 (en) 2015-04-07 2018-06-26 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor X-ray detector
US10910432B1 (en) * 2019-07-23 2021-02-02 Cyber Medical Imaging, Inc. Use of surface patterning for fabricating a single die direct capture dental X-ray imaging sensor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4343881A (en) * 1981-07-06 1982-08-10 Savin Corporation Multilayer photoconductive assembly with intermediate heterojunction
JPH04269653A (ja) 1991-02-25 1992-09-25 Nippon Telegr & Teleph Corp <Ntt> 漏洩磁束検出装置
JPH06345598A (ja) * 1993-06-04 1994-12-20 Japan Energy Corp 放射線検出素子用ＣｄＴｅ結晶およびその製造方法
JPH09124310A (ja) * 1995-10-27 1997-05-13 Sumitomo Metal Mining Co Ltd ＣｄＴｅ結晶の製造方法
JP4269653B2 (ja) 2002-11-20 2009-05-27 株式会社島津製作所 放射線検出器の製造方法
EP2244294B1 (en) * 2008-02-12 2018-06-27 Shimadzu Corporation Method for manufacturing radiation detector
US20110155208A1 (en) * 2008-06-25 2011-06-30 Michael Wang Semiconductor heterojunction photovoltaic solar cell with a charge blocking layer
CN102460215B (zh) * 2009-04-03 2014-02-26 株式会社岛津制作所 放射线检测器的制造方法、放射线检测器以及放射线摄像装置
DE102010006452B4 (de) * 2010-02-01 2012-01-26 Siemens Aktiengesellschaft Strahlenwandlermaterial, Strahlenwandler, Strahlendetektor, Verwendung eines Strahlenwandlermaterials und Verfahren zur Herstellung eines Strahlenwandlermaterials

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Publication number Publication date
JP2014059155A (ja) 2014-04-03
US20140080243A1 (en) 2014-03-20
US8895341B2 (en) 2014-11-25

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