JP6052732B2 - 磁気抵抗効果素子 - Google Patents
磁気抵抗効果素子 Download PDFInfo
- Publication number
- JP6052732B2 JP6052732B2 JP2012256732A JP2012256732A JP6052732B2 JP 6052732 B2 JP6052732 B2 JP 6052732B2 JP 2012256732 A JP2012256732 A JP 2012256732A JP 2012256732 A JP2012256732 A JP 2012256732A JP 6052732 B2 JP6052732 B2 JP 6052732B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic film
- barber pole
- pole electrode
- angle
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000000694 effects Effects 0.000 title claims description 38
- 230000005415 magnetization Effects 0.000 claims description 20
- 239000010408 film Substances 0.000 description 52
- 239000013598 vector Substances 0.000 description 36
- 239000000126 substance Substances 0.000 description 15
- 239000010949 copper Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000889 permalloy Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/08—Arrangements for measuring electric power or power factor by using galvanomagnetic-effect devices, e.g. Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Description
長手方向に磁化容易軸を誘導された短冊状の磁性膜と、
前記磁性膜上に前記長手方向に対して傾斜角θで形成されたバーバーポール電極を有し、
前記傾斜角θは45度より小さいことを特徴とする。
2 導電率がσ2の物質2
10 磁気抵抗効果素子
11 基板
12 磁性膜
14 バーバーポール電極
14p 傾斜辺
16a、16b 接続電極
100 磁気抵抗効果素子
111 基板
112 磁性膜
114 バーバーポール電極
114p 傾斜辺
116a、116b 接続電極
EA 磁化容易軸
M 磁化
θ 傾斜角
φ 電流ベクトルと磁化ベクトルのなす角度
Claims (1)
- 長手方向に磁化容易軸を誘導された短冊状の磁性膜と、
前記磁性膜上に前記長手方向に対して傾斜角θで形成されたバーバーポール電極を有し、
前記傾斜角θは45度から(14)式で示すθ 2 の平均値を引いた値に対して±5°の範囲にあることを特徴とする磁気抵抗効果素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012256732A JP6052732B2 (ja) | 2012-11-22 | 2012-11-22 | 磁気抵抗効果素子 |
CN201380068791.5A CN104919611B (zh) | 2012-11-22 | 2013-11-21 | 磁阻效应元件 |
PCT/JP2013/006855 WO2014080634A1 (ja) | 2012-11-22 | 2013-11-21 | 磁気抵抗効果素子 |
EP13857243.3A EP2924749B1 (en) | 2012-11-22 | 2013-11-21 | Magnetoresistance effect element |
US14/646,377 US9689902B2 (en) | 2012-11-22 | 2013-11-21 | Magnetoresistance effect element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012256732A JP6052732B2 (ja) | 2012-11-22 | 2012-11-22 | 磁気抵抗効果素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014107293A JP2014107293A (ja) | 2014-06-09 |
JP6052732B2 true JP6052732B2 (ja) | 2016-12-27 |
Family
ID=50775829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012256732A Active JP6052732B2 (ja) | 2012-11-22 | 2012-11-22 | 磁気抵抗効果素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9689902B2 (ja) |
EP (1) | EP2924749B1 (ja) |
JP (1) | JP6052732B2 (ja) |
CN (1) | CN104919611B (ja) |
WO (1) | WO2014080634A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104900801A (zh) * | 2015-04-23 | 2015-09-09 | 美新半导体(无锡)有限公司 | 一种反铁磁钉扎各向异性磁电阻(amr)传感器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5719533A (en) | 1980-07-09 | 1982-02-01 | Hitachi Ltd | Method of controlling heating |
JPS5719533U (ja) * | 1980-07-09 | 1982-02-01 | ||
JPS5736428A (ja) * | 1980-08-11 | 1982-02-27 | Hitachi Ltd | Jikiteikohetsudo |
US4639806A (en) * | 1983-09-09 | 1987-01-27 | Sharp Kabushiki Kaisha | Thin film magnetic head having a magnetized ferromagnetic film on the MR element |
JPH01217283A (ja) * | 1988-02-25 | 1989-08-30 | Fujitsu Ltd | 単方向磁界検出用磁気抵抗素子 |
JPH02165408A (ja) * | 1988-12-19 | 1990-06-26 | Sony Corp | 磁気抵抗効果型磁気ヘッド |
KR950000560B1 (ko) * | 1992-06-30 | 1995-01-24 | 삼성전자 주식회사 | 자기저항(mr) 헤드 |
JPH06236520A (ja) * | 1993-02-09 | 1994-08-23 | Matsushita Electric Ind Co Ltd | ヨーク型mrヘッド |
US5739988A (en) | 1996-09-18 | 1998-04-14 | International Business Machines Corporation | Spin valve sensor with enhanced magnetoresistance |
JPH10275314A (ja) * | 1997-04-01 | 1998-10-13 | Nec Corp | 磁気抵抗効果型ヘッド |
JP4394076B2 (ja) | 2006-01-12 | 2010-01-06 | 三菱電機株式会社 | 電流センサ |
US7872564B2 (en) * | 2007-11-16 | 2011-01-18 | Infineon Technologies Ag | Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors |
JP5794777B2 (ja) | 2010-12-22 | 2015-10-14 | 三菱電機株式会社 | 半導体装置 |
IT1403433B1 (it) * | 2010-12-27 | 2013-10-17 | St Microelectronics Srl | Sensore magnetoresistivo con capacita' parassita ridotta, e metodo |
IT1403434B1 (it) * | 2010-12-27 | 2013-10-17 | St Microelectronics Srl | Sensore di campo magnetico avente elementi magnetoresistivi anisotropi, con disposizione perfezionata di relativi elementi di magnetizzazione |
CN103477235B (zh) | 2011-02-01 | 2016-11-23 | 株式会社Sirc | 传感器元件及使用传感器元件的功率测量装置 |
US9817087B2 (en) * | 2012-03-14 | 2017-11-14 | Analog Devices, Inc. | Sensor with magnetroesitive and/or thin film element abutting shorting bars and a method of manufacture thereof |
-
2012
- 2012-11-22 JP JP2012256732A patent/JP6052732B2/ja active Active
-
2013
- 2013-11-21 CN CN201380068791.5A patent/CN104919611B/zh active Active
- 2013-11-21 EP EP13857243.3A patent/EP2924749B1/en active Active
- 2013-11-21 US US14/646,377 patent/US9689902B2/en active Active
- 2013-11-21 WO PCT/JP2013/006855 patent/WO2014080634A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP2924749B1 (en) | 2017-09-27 |
WO2014080634A1 (ja) | 2014-05-30 |
EP2924749A1 (en) | 2015-09-30 |
US20150301089A1 (en) | 2015-10-22 |
JP2014107293A (ja) | 2014-06-09 |
US9689902B2 (en) | 2017-06-27 |
EP2924749A4 (en) | 2016-09-07 |
CN104919611B (zh) | 2017-08-04 |
CN104919611A (zh) | 2015-09-16 |
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