JP6017275B2 - 半導体基板のエッチング方法及び半導体素子の製造方法 - Google Patents

半導体基板のエッチング方法及び半導体素子の製造方法 Download PDF

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Publication number
JP6017275B2
JP6017275B2 JP2012251443A JP2012251443A JP6017275B2 JP 6017275 B2 JP6017275 B2 JP 6017275B2 JP 2012251443 A JP2012251443 A JP 2012251443A JP 2012251443 A JP2012251443 A JP 2012251443A JP 6017275 B2 JP6017275 B2 JP 6017275B2
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Japan
Prior art keywords
etching
layer
substrate
etching method
mass
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JP2012251443A
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English (en)
Japanese (ja)
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JP2014099559A (ja
Inventor
祐継 室
祐継 室
上村　哲也
上村　　哲也
稲葉　正
正 稲葉
篤史 水谷
篤史 水谷
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2012251443A priority Critical patent/JP6017275B2/ja
Priority to PCT/JP2013/080655 priority patent/WO2014077270A1/ja
Priority to TW102141371A priority patent/TWI605106B/zh
Publication of JP2014099559A publication Critical patent/JP2014099559A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP2012251443A 2012-11-15 2012-11-15 半導体基板のエッチング方法及び半導体素子の製造方法 Active JP6017275B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012251443A JP6017275B2 (ja) 2012-11-15 2012-11-15 半導体基板のエッチング方法及び半導体素子の製造方法
PCT/JP2013/080655 WO2014077270A1 (ja) 2012-11-15 2013-11-13 半導体基板のエッチング方法及び半導体素子の製造方法
TW102141371A TWI605106B (zh) 2012-11-15 2013-11-14 蝕刻液、半導體基板的蝕刻方法及半導體元件的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012251443A JP6017275B2 (ja) 2012-11-15 2012-11-15 半導体基板のエッチング方法及び半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JP2014099559A JP2014099559A (ja) 2014-05-29
JP6017275B2 true JP6017275B2 (ja) 2016-10-26

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JP2012251443A Active JP6017275B2 (ja) 2012-11-15 2012-11-15 半導体基板のエッチング方法及び半導体素子の製造方法

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JP (1) JP6017275B2 (zh)
TW (1) TWI605106B (zh)
WO (1) WO2014077270A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI705132B (zh) 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
TWI816635B (zh) 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
KR102506218B1 (ko) * 2016-05-03 2023-03-06 동우 화인켐 주식회사 질화티타늄 막의 식각액 조성물
CN115011347B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种氮化铝和钨的选择性蚀刻液

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07281445A (ja) * 1994-04-11 1995-10-27 Toshiba Corp 半導体装置
JP3235549B2 (ja) * 1997-11-07 2001-12-04 ヤマハ株式会社 導電層形成法
WO2006110279A1 (en) * 2005-04-08 2006-10-19 Sachem, Inc. Selective wet etching of metal nitrides
JP5347237B2 (ja) * 2007-05-15 2013-11-20 三菱瓦斯化学株式会社 洗浄用組成物
JP5037442B2 (ja) * 2008-06-25 2012-09-26 東京応化工業株式会社 窒化チタン除去液、窒化チタン被膜の除去方法、及び窒化チタン除去液の製造方法

Also Published As

Publication number Publication date
TWI605106B (zh) 2017-11-11
TW201428088A (zh) 2014-07-16
JP2014099559A (ja) 2014-05-29
WO2014077270A1 (ja) 2014-05-22

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