JP6013122B2 - Vapor growth equipment - Google Patents

Description

  The present invention relates to a vapor phase growth apparatus for supplying a source gas onto a substrate installed in a reaction furnace and growing a thin film on the substrate.

  The vapor phase growth method is a thin film forming method in which a raw material for a thin film is supplied in a gas state onto a substrate, and the raw material is deposited on the substrate surface by a chemical reaction. For example, a gallium nitride semiconductor thin film used as a material for a blue light emitting diode, a green light emitting diode, or a violet laser diode is manufactured by a MOCVD (Metal Organic Chemical Vapor Deposition) method using an organic metal as a raw material.

  An example of a vapor phase growth apparatus that forms a semiconductor thin film using a vapor phase growth method is disclosed in Patent Document 1. In the vapor phase growth apparatus of Patent Document 1, a plurality of substrates are placed in a chamber serving as a reactor for vapor phase growth, a susceptor whose upper surface is covered with a susceptor cover is installed, and a nozzle disposed in the center of the chamber is used. This is a self-revolving vapor phase growth apparatus in which a raw material gas containing a semiconductor thin film material is supplied in all directions to vapor-phase grow a semiconductor thin film on a substrate.

In such a vapor phase growth apparatus, when the film formation is completed, the reaction product adheres to a member such as a susceptor or a susceptor cover. If these products are allowed to stand and film formation continues, some of the constituent metals contained in the product may become liquid during film formation and diffuse into the chamber, which may adversely affect film formation. Therefore, it is necessary to replace the susceptor after use with the one before use.
Therefore, the vapor phase growth apparatus disclosed in Patent Document 1 includes a holding device that can lift and lower the susceptor cover by suction, and a transfer device that can deliver the holding device and the susceptor cover and can carry in and out the susceptor cover. These are used to replace the susceptor cover (see paragraphs [0040] to [0042] of Patent Document 1).

JP 2010-255083 A

  However, the holding device of Patent Document 1 uses only the replacement of the susceptor cover, and another mechanism for replacing the susceptor must be provided separately. Therefore, the vapor growth apparatus itself is complicated and large-sized. was there. Further, since the holding device of Patent Document 1 holds the susceptor cover by suction, there is a possibility that suction holding cannot be ensured if fine dust or the like is present on the suction surface. Furthermore, the susceptor cover is relatively light and can be adsorbed, but there is a problem that it is difficult to apply to a heavy object such as a susceptor.

  The present invention has been made to solve such a problem, and an object of the present invention is to provide a vapor phase growth apparatus having a compact apparatus configuration.

(1) A vapor phase growth apparatus according to the present invention supplies a raw material gas onto a substrate installed in a chamber that can be divided into a chamber body and a chamber lid and can grow a thin film on the substrate. A growth device,
The vapor phase growth apparatus comprises:
A susceptor having a substrate holding portion that is formed in a disc shape and is detachably installed on the chamber body side to hold the substrate;
A susceptor cover placed on the susceptor so as to cover a portion of the susceptor other than the substrate holding portion;
A transfer arm for transferring the susceptor and the susceptor cover into and out of the chamber;
The susceptor or the susceptor cover is provided with a push-up / lowering mechanism that pushes up from below and supports the susceptor or the susceptor cover so as to be lifted / lowered.

(2) In the above (1), a plurality of through holes are provided in the outer peripheral portion of the susceptor,
The push-up / lowering mechanism rotates a plurality of push-up bars standing up and down on the outer peripheral portion of the chamber body, and rotates the susceptor to position the relative positions of the through holes and the upper end surface of the push-up bar. By controlling, when raising the push-up rod, it has a function of selecting whether to penetrate each through hole or not.

(3) In the above (2), the vapor phase growth apparatus includes a susceptor rotation mechanism that rotates the susceptor, a rotation angle sensor that measures a rotation angle of the susceptor, and a rotation angle sensor. A control unit that inputs the measured rotation angle of the susceptor, controls the susceptor rotation mechanism to adjust the rotation angle of the susceptor, and controls the operation of the push-up / lowering mechanism; To do.

(4) Further, in the above (2) or (3), the susceptor has a notch that extends from the through hole in a radially outward direction of the susceptor and cuts an outer peripheral portion of the susceptor. It is characterized by being.

(5) Further, in any of the above (1) to (4), the control unit has a function of controlling the operation of the transfer arm, and the susceptor supported by the push-up / lowering mechanism or The susceptor cover is controlled to be received and transported by the transport arm.

  In the present invention, since the susceptor or the susceptor cover is lifted from below and supported so as to be lifted and lowered, the susceptor and the susceptor cover can be transferred to and from the transfer arm by a single mechanism. It is not necessary to provide a mechanism separately, and a small vapor phase growth apparatus can be provided. Further, since the present invention pushes up and holds the susceptor from below, there is no problem of holding uncertainty as in the vapor phase growth apparatus of Patent Document 1, and the susceptor is relatively heavy. It can be easily applied to holding.

1 is an elevational sectional view of a vapor phase growth apparatus according to an embodiment of the present invention. It is explanatory drawing explaining the member which comprises the vapor phase growth apparatus of FIG. 1, Comprising: It is a top view of a susceptor. It is explanatory drawing explaining the member which comprises the vapor phase growth apparatus of FIG. 1, Comprising: It is a top view of a susceptor cover. It is explanatory drawing explaining the member which comprises the vapor phase growth apparatus of FIG. 1, Comprising: It is a top view of a conveyance arm. It is explanatory drawing explaining the member which comprises the vapor phase growth apparatus of FIG. 1, Comprising: It is a top view of a chamber main body. It is explanatory drawing explaining 1 process in an example of the conveyance method using the vapor phase growth apparatus of FIG. 1 (the 1). It is explanatory drawing explaining 1 process in an example of the conveying method using the vapor phase growth apparatus of FIG. 1 (the 2). FIG. 6 is an explanatory diagram for explaining one step in an example of a transfer method using the vapor phase growth apparatus of FIG. 1 (part 3); It is explanatory drawing explaining 1 process in the other conveying method of the conveying method of FIGS. 6-8 (the 1). It is explanatory drawing explaining 1 process in the other conveying method of the conveying method of FIGS. 6-8 (the 2). It is explanatory drawing explaining 1 process in the other conveying method of the conveying method of FIGS. 6-8 (the 3). It is explanatory drawing explaining the other aspect of the susceptor of FIG.

As shown in FIG. 1, a vapor phase growth apparatus 1 according to an embodiment of the present invention includes a chamber 2 that can be divided into a chamber main body 3 and a chamber lid 4 and a disc-shaped chamber 2 side. And a susceptor 7 provided with a substrate holding portion 7b (see FIG. 2) for holding the substrate 5 for vapor phase growth, and the susceptor 7 so as to cover a portion of the susceptor 7 other than the substrate holding portion 7b. The susceptor cover 9 placed on the top, the ceiling plate 11 which is detachably installed so as to face the susceptor 7 and form the flow path L of the source gas, and the susceptor 7 and the susceptor cover 9 are arranged inside and outside the chamber 2. The transport arm 19 (see FIGS. 4 and 6 to 11) for transporting the susceptor 7, the rotation angle sensor 20 for measuring the rotation angle of the susceptor 7, and the susceptor 7 or the susceptor cover 9 are lifted from below. A push-up elevating mechanism 15 rotatably supported, and a control unit 16.
Hereinafter, each configuration will be described in detail.

<Chamber>
As shown in FIG. 1, the chamber 2 has a cylindrical shape with a flat shape and closed at both ends. The chamber 2 can be divided vertically into a chamber main body 3 having a bottomed cylindrical shape and a chamber lid 4 having a bottomed cylindrical shape covering the opening side of the chamber main body 3.
The chamber body 3 is fixedly provided with the opening side up. The chamber lid 4 is provided to be movable up and down above the chamber body 3 with the opening side down.
As shown in FIG. 1, the chamber body 3 and the chamber lid 4 have a cylindrical shape which is sealed by lowering the chamber lid 4 and matching the openings, and a semiconductor thin film is formed on the substrate 5 (see FIG. 2). It becomes a reactor for film formation.
As the material of the chamber body 3 and the chamber lid 4, stainless steel having excellent corrosion resistance can be used.
In the above description, the chamber lid 4 has been described as an example that moves only in the vertical direction. However, the chamber lid 4 may move in the vertical direction and move in the horizontal direction to a predetermined position.

<Susceptor>
As shown in the plan view of FIG. 2, the susceptor 7 is formed in an annular plate shape having an opening 7 a into which an upper portion of a nozzle portion 13, which will be described later, can be inserted, and is provided in the chamber body 3. 8 is detachably and rotatably installed (see FIG. 1).
Around the opening 7a, a plurality of substrate holding portions 7b for holding the substrate 5 on which a thin film is formed are provided at equal intervals in the circumferential direction. FIG. 2 shows a state where the substrate 5 is placed on the substrate holding portion 7b.
Three through holes 7 c are provided on the outer periphery of the susceptor 7. The through-hole 7c allows a push-up bar 15a (details will be described later) of the push-up / lowering mechanism 15 to pass therethrough.
For example, carbon can be used as the material of the susceptor 7. The material of the substrate 5 is selected according to the material of the semiconductor thin film to be formed.

<Susceptor cover>
As shown in the plan view of FIG. 3, the susceptor cover 9 has an annular plate shape substantially the same as the susceptor 7 in plan view, and an opening 9a into which the upper part of the nozzle portion 13 can be inserted at the center, and the opening 9a. And a plurality of openings 9b.
The susceptor cover 9 is placed on the susceptor 7 and protects the susceptor 7 from contamination, oxidation, and the like by the source gas. When the susceptor cover 9 is placed on the susceptor 7, the upper surface of the susceptor cover 9 and the upper surface of the substrate 5 placed on the substrate holding portion 7b of the susceptor 7 are flush with each other. The raw material gas flow path L is formed by this surface and the lower surface of the ceiling plate 11. For example, quartz is used as the material of the susceptor cover 9.

<Ceiling board>
The ceiling plate 11 has a disk shape that is slightly larger than the susceptor 7 in a plan view, and has an opening in which the upper portion of the nozzle portion 13 can be inserted and fitted in the center, as shown in FIG. The susceptor cover 9 is disposed above the susceptor cover 9 so as to face the susceptor cover 9 with a predetermined distance. The upper part of the nozzle part 13 is inserted and fitted into the opening of the ceiling plate 11.
Thus, when the ceiling plate 11 is installed on the chamber body 3 side, a raw material gas flow path L for forming a semiconductor thin film is formed on the lower surface of the ceiling plate 11 and the upper surface of the susceptor cover 9 ( (See FIG. 1). For example, quartz can be used as the material of the ceiling plate 11.

<Nozzle part>
The nozzle unit 13 is installed at the center of the chamber body 3 to support the ceiling plate 11 and to supply the source gas to the source gas flow path L.
As shown in FIG. 1, the nozzle portion 13 has a first nozzle wall 13 a having a shape in which one end of a cylinder projects outward, and a tubular tube having a diameter larger than the diameter of the column of the first nozzle wall 13 a. A second nozzle wall 13b having a flange, a third nozzle wall 13c having a larger diameter than the second nozzle wall 13b and having a flange at one end, and a tubular having a larger diameter than the third nozzle wall 13c. A fourth nozzle wall 13d having a flange at one end is arranged in a nested manner.

  A space formed by adjacent members of the first nozzle wall 13a, the second nozzle wall 13b, the third nozzle wall 13c, and the fourth nozzle wall 13d is a gas introduction path F for the source gas. Source gases are supplied to the gas introduction path F from a source gas supply unit (not shown) and ejected from the nozzle unit 13. For example, when the semiconductor thin film to be formed is gallium nitride, an organic metal gas, ammonia gas, and purge gas are supplied from the source gas supply unit (see arrows in FIG. 1).

The source gas ejected from the nozzle portion 13 flows in the source gas flow path L formed by the upper surface of the susceptor cover 9 and the lower surface of the ceiling plate 11 from the center of the chamber body 3 toward the outer periphery, It discharges | emits from the discharge port 3a provided in the outer periphery of the main body 3 (refer the arrow in FIG. 1). As a result, a semiconductor thin film is formed on the surface of the substrate 5 placed on the susceptor 7.
The material of the source gas is selected according to the type of semiconductor thin film to be formed. Moreover, the nozzle part 13 is not limited to the structure shown in FIG. 1, What is necessary is just the structure which can supply the source gas to the flow path L of source gas while supporting the ceiling board 11.

<Pushing up / down mechanism>
As shown in FIG. 5, the push-up / lowering mechanism 15 includes three push-up bars 15 a that can be disposed at the same positions as the through holes 7 c of the susceptor 7 installed in the chamber body 3, and The upper end surface is always positioned below the susceptor 7 (see FIG. 6), and during operation, the elevating means 15b is raised above the upper surface of the susceptor cover 9 (see FIG. 7). The push-up / lowering mechanism 15 pushes up and supports the susceptor 7 from below, so that the susceptor 7 can be lifted / lowered together with the susceptor cover 9 placed on the susceptor 7 as shown in FIG.
FIG. 5 shows a state where the susceptor 7 and the like are removed so that the bottom of the chamber body 3 can be seen.

In addition, the rotation angle of the susceptor 7 is measured using the rotation angle sensor 20, and the susceptor 7 is rotated based on the measured rotation angle so that the through hole 7c is positioned directly above the upper end of the push rod 15a. By aligning (see FIG. 9) and raising the push-up bar 15a, as shown in FIG. 10, the push-up bar 15a penetrates the through-hole 7c and pushes up and supports only the susceptor cover 9 to move up and down. it can.
Thus, when raising the push-up rod 15a, the relative position of the upper end of the through-hole 7c and the push-up rod 15a in a plan view is adjusted, and the push-up rod 15a is made to pass through the through-hole 7c or not. It is possible to select whether the susceptor 7 is pushed up together with the susceptor cover 9 or only the susceptor cover 9 is pushed up.

It should be noted that it is preferable that three or more push-up rods 15 a are installed at equal intervals in the outer circumferential direction of the susceptor 7. Thereby, the susceptor 7 can be stably supported as described above.
Moreover, although the number of the through-holes 7c of the susceptor 7 is three in the above description, it may be appropriately increased or decreased according to the number of the push-up bars 15a.

<Ceiling board outer periphery support part>
As shown in FIG. 1, the ceiling plate outer peripheral support portion 17 is on the outer peripheral side of the ceiling plate 11 and is detachable from either the chamber body 3 or the chamber lid 4. When the ceiling plate outer periphery support portion 17 is attached to the chamber lid 4, the ceiling plate outer periphery support portion 17 moves up and down in conjunction with the elevation of the chamber lid 4 when the chamber 2 is opened and closed. At this time, the outer peripheral part of the ceiling board 11 is supported by the ceiling board outer peripheral support part 17, and the ceiling board 11 also moves up and down.

On the other hand, when the ceiling plate outer periphery support portion 17 is attached to the chamber body 3, only the chamber lid 4 can be raised while the ceiling plate 11 is placed on the ceiling plate outer periphery support portion 17 when the chamber 2 is opened and closed. it can.
As described above, the ceiling plate outer periphery support portion 17 is attached to the chamber body 3 when the ceiling plate 11 is not lifted or lowered as the chamber 2 is opened or closed, and is attached to the chamber lid 4 when the ceiling plate 11 is desired to be lifted or lowered.

<Transfer arm>
The transfer arm 19 is installed outside the chamber 2, and transfers one or more or all of the susceptor 7, the susceptor cover 9, and the ceiling plate 11 to the inside and outside of the chamber 2.
As shown in FIG. 4, the transfer arm 19 has a plate having a substantially U shape in plan view, and has two upper and lower stages (an upper stage part 19 a and a lower stage part 19 b) as shown in FIGS. 6 to 11. The upper step portion 19a and the lower step portion 19b are connected by a connecting portion 19c with a U-shaped curved portion.

The upper step portion 19a and the lower step portion 19b have substantially the same size in plan view as shown in FIG. 4, and are set to such a size that the outer peripheral portions thereof protrude when the susceptor 7 and the susceptor cover 9 are placed. Has been.
In addition, the upper step portion 19a and the lower step portion 19b are set to have a size and a shape that allow the transfer arm 19 to enter above the chamber body 3 by passing between them while the push-up rod 15a described later is raised. .
The distance between the upper step portion 19a and the lower step portion 19b, that is, the height of the connecting portion 19c is determined by taking into consideration the operating range of the push-up bar 15a of the push-up / lowering mechanism 15 and It is set so that delivery can be performed smoothly.

<Control unit>
The control unit 16 controls operations of the susceptor rotating mechanism 8, the push-up / lowering mechanism 15, the ceiling board outer peripheral support unit 17, and the transfer arm 19. Specifically, for example, start and stop of rotation of the susceptor 7 by the susceptor rotation mechanism 8, adjustment of the relative rotation angle of the susceptor 7 with the chamber body 3, and lifting and lowering of the thrust bar 15 a of the thrust lifting mechanism 15 The operation of the elevating means 15b, the mounting of the ceiling plate outer periphery support part 17 to the chamber body 3 or the chamber lid 4, the raising and lowering of the chamber lid 4, and the conveyance of the conveyance arm 19 into and out of the chamber 2 are controlled. The installation location of the control unit 16 is not particularly limited as long as the operation of the push-up / lowering mechanism 15, the ceiling plate outer periphery support unit 17, and the transfer arm 19 can be controlled.

A method for carrying out the susceptor 7 and the susceptor cover 9 after being used in the vapor phase growth in the vapor phase growth apparatus 1 of the present embodiment configured as described above will be described below with reference to FIGS. 1 and 6 to 8. explain.
The operation of the components of the vapor phase growth apparatus 1 in each process is controlled by the control unit 16.

The state of the vapor phase growth apparatus 1 shown in FIG. 1 will be described as a state after the vapor phase growth process. As shown in FIG. 1, the chamber lid 4 is in contact with the chamber body 3, and the chamber 2 is in a closed state.
The used susceptor 7 is supported by a susceptor rotating mechanism 8. A susceptor cover 9 is placed on the susceptor 7. A substrate 5 is placed on the substrate holding portion 7 b of the susceptor 7.

The upper end surface of the push-up bar 15 a of the push-up / lowering mechanism 15 is positioned below the susceptor 7. The ceiling board outer periphery support part 17 is attached to the chamber lid 4.
The transfer arm 19 stands by outside the chamber 2. In this state, nothing is placed on the upper stage portion 19 a and the lower stage portion 19 b of the transfer arm 19.
With the above state as the initial position, the first to third steps described below are sequentially performed.

(First step)
First, the ceiling board outer periphery support part 17 is attached to the chamber main body 3, and the chamber 2 is opened by raising the chamber lid 4 from the initial position to a position higher than the upper step part 19a of the transfer arm 19 (see FIG. 6). . At this time, since the ceiling board outer periphery support part 17 is attached to the chamber lid 4, the ceiling board outer periphery support part 17 and the ceiling board 11 rise as the chamber lid 4 rises.

(Second step)
Next, the used susceptor 7 is pushed up to the height of the lower step portion 19b of the transfer arm 19 by raising the push-up bar 15a of the push-up / lowering mechanism 15 from the initial position (see FIG. 7).
When the push rod 15a is raised, the rotation angle of the susceptor 7 is measured using the rotation angle sensor 20, and the rotation angle of the susceptor is adjusted based on the measured rotation angle. More specifically, when the through-hole 7c of the susceptor 7 is in a position penetrated by the push-up rod 15a, the susceptor 7 is rotated using the susceptor rotating mechanism 8 so that the push-up rod 15a does not penetrate the through-hole 7c. Thus, the position of the through hole 7c is shifted.
By doing so, the susceptor 7 can be pushed up together with the susceptor cover 9.

(Third step)
Next, the transfer arm 19 is moved in the horizontal direction so that the upper step portion 19a of the transfer arm 19 is positioned above the raised susceptor cover 9, and the lower step portion 19b of the transfer arm 19 is pushed up at the same time. It is located below.
Thereafter, the susceptor 7 is placed on the lower step portion 19b of the transfer arm 19 by lowering the push-up bar 15a. In this way, the susceptor 7 is delivered to the transfer arm 19. The push-up bar 15a is lowered as it is to return to the initial position (see FIG. 8).
Thereafter, the transfer arm 19 is moved out of the chamber 2. Thereby, the used susceptor 7 and the like are carried out of the chamber 2. After unloading, the substrate 5 after vapor deposition placed on the susceptor 7 can be recovered. Moreover, the susceptor 7 etc. carried out can be wash | cleaned.

By performing the above first to third steps in the reverse procedure with the susceptor 7 on which the susceptor cover 9 before use is placed on the lower step portion 19b of the transfer arm, the susceptor 7 before use and The susceptor cover 9 can be carried in and installed on the chamber body side 3. That is, the susceptor 7 in which the susceptor cover 9 is overlapped is placed on the lower step portion 19 b of the transfer arm 19 that is placed outside the chamber 2, and then the transfer arm 19 is moved above the chamber body 3. Next, the push-up rod 15a is raised from the initial position, and the susceptor 7 placed on the transfer arm 19 is pushed up and supported by the push-up rod 15a. Next, the transfer arm 19 is retracted out of the chamber 2. Next, the susceptor 7 is installed on the chamber body 3 side by lowering the push-up bar 15a.
In this way, the exchange of the susceptor 7 and the susceptor cover 9 is completed. Thereafter, if the chamber lid 4 is lowered and the chamber 2 is closed, vapor phase growth can be performed again.

In the above description, the replacement of the susceptor 7 and the susceptor cover 9 has been described. However, as shown in FIG. If the positions of the holes 7c are adjusted in advance, when the push-up rod 15a is raised in the second step, the push-up rod 15a can penetrate the through-hole 7c of the susceptor 7 and push up only the susceptor cover 9 ( (See FIG. 10).
By doing in this way, in the said 3rd process, only the susceptor cover 9 can be delivered to the conveyance arm 19 (refer FIG. 11), and can be carried out.

Further, the first to third steps are carried out in the reverse order with the susceptor cover 9 before use placed on the lower step portion 19b of the transfer arm, so that the susceptor cover 9 before use is carried into the susceptor. 7 can be mounted. That is, the susceptor cover 9 is placed on the lower step portion 19 b of the transfer arm 19 that is kept out of the chamber 2, and then the transfer arm 19 is moved above the chamber body 3. Next, the push-up rod 15a is raised from the initial position, and the susceptor cover 9 placed on the transfer arm 19 is pushed up and supported by the push-up rod 15a. Next, the transfer arm 19 is retracted out of the chamber 2. Next, the susceptor cover 9 is placed on the susceptor 7 by lowering the push-up bar 15a.
In this way, the replacement of the susceptor cover 9 is completed. Thereafter, if the chamber lid 4 is lowered and the chamber 2 is closed, vapor phase growth can be performed again.

  As described above, in the present embodiment, the susceptor 7 and the susceptor cover 9 with respect to the transfer arm 19 are provided by providing the push-up / lowering mechanism that pushes up the susceptor 7 or the susceptor cover 9 from below and supports the lift / lowering. Since the delivery can be performed by a single mechanism (pushing up / down mechanism 15), it is not necessary to provide another mechanism separately, and a vapor phase growth apparatus can be realized. Moreover, in this Embodiment, it can implement | achieve by pushing up from the downward direction of susceptor 7 grade | etc., Since it is not necessary to provide apparatuses, such as a suction device like patent document 1, the structure of an apparatus can be simplified.

  In the above, the susceptor 7 has a circular through hole 7c. However, the susceptor 7 may have any shape that allows the push-up rod 15a to pass therethrough. For example, as shown in FIG. The shape may be such that a notch portion 7 d that extends from 7 c in the radially outward direction of the susceptor 7 and cuts out the outer peripheral portion of the susceptor 7 communicates. By doing so, it is possible to prevent the susceptor 7 from cracking or cracking in the susceptor 7 even when the temperature inside the susceptor 7 becomes high during the vapor phase growth process. It is possible to prevent the life of the susceptor 7 from being reduced.

L flow path F gas introduction path 1 vapor phase growth apparatus 2 chamber 3 chamber main body 3a discharge port 4 chamber lid 5 substrate 7 susceptor 7a opening 7b substrate holding portion 7c through hole 7d notch 8 susceptor rotating mechanism 9 susceptor cover 9a opening Part 9b Opening part 11 Ceiling plate 13 Nozzle part 13a 1st nozzle wall 13b 2nd nozzle wall 13c 3rd nozzle wall 13d 4th nozzle wall 15 Pushing up and down mechanism 15a Pushing up bar 15b Lifting means 16 Control part 17 Ceiling board outer periphery support part 19 Transfer arm 19a Upper stage portion 19b Lower stage portion 19c Connection portion 20 Rotation angle sensor

Claims (4)

A vapor phase growth apparatus for growing a thin film on the substrate by supplying a source gas onto a substrate installed in a chamber that can be divided into a chamber body and a chamber lid .
A susceptor having a substrate holding portion that is formed in a disc shape and is detachably installed on the chamber body side to hold the substrate;
A susceptor cover placed on the susceptor so as to cover a portion of the susceptor other than the substrate holding portion;
A transfer arm for transferring the susceptor and the susceptor cover into and out of the chamber;
A lifting and lowering mechanism that supports the susceptor or the susceptor cover so as to be lifted and lowered from below ;
The outer periphery of the susceptor is provided with a plurality of through holes,
The push-up / lowering mechanism rotates a plurality of push-up bars standing up and down on the outer peripheral portion of the chamber body, and rotates the susceptor to position the relative positions of the through holes and the upper end surface of the push-up bar. A vapor phase growth apparatus characterized by having a function of selecting whether to penetrate each through-hole or not when penetrating the push-up rod by controlling . And the susceptor rotating mechanism for rotating the pre-Symbol susceptor, the rotation angle sensor that measures the rotation angle of the susceptor, enter the rotation angle of the susceptor was measured by the rotation angle sensor, and controls the susceptor rotation mechanism The vapor phase growth apparatus according to claim 1 , further comprising: a control unit that adjusts a rotation angle of the susceptor and controls operation of the push-up / lowering mechanism. 3. The vapor phase growth apparatus according to claim 1, wherein the susceptor has a notch extending from the through hole in a radially outward direction of the susceptor and notching an outer peripheral portion of the susceptor. The control unit has a function of controlling the operation of the transfer arm, and controls the susceptor or the susceptor cover supported by the push-up / lowering mechanism to be received and transferred by the transfer arm. Item 4. The vapor phase growth apparatus according to Item 2 or 3 .

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