JP6008854B2 - ナノ技術的への応用のための、多糖ブロックを持つコポリマー系のナノ領域で組織化された膜 - Google Patents

ナノ技術的への応用のための、多糖ブロックを持つコポリマー系のナノ領域で組織化された膜 Download PDF

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JP6008854B2
JP6008854B2 JP2013522283A JP2013522283A JP6008854B2 JP 6008854 B2 JP6008854 B2 JP 6008854B2 JP 2013522283 A JP2013522283 A JP 2013522283A JP 2013522283 A JP2013522283 A JP 2013522283A JP 6008854 B2 JP6008854 B2 JP 6008854B2
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block
substrate
copolymer
polysaccharide
bipyridine
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JP2013539420A (ja
JP2013539420A5 (https=
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エソー，カリム
ハリラ，サミ
フォルト，セバスチャン
ボルサリ，レドウアン
バロン，チェリ
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セントレ ナショナル デ ラ リシェルシェ サイエンティフィック（セ・エン・エル・エス）
セントレ ナショナル デ ラ リシェルシェ サイエンティフィック（セ・エン・エル・エス）
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G81/00—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers
    • C08G81/02—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D105/00—Coating compositions based on polysaccharides or on their derivatives, not provided for in groups C09D101/00 or C09D103/00
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D187/00—Coating compositions based on unspecified macromolecular compounds, obtained otherwise than by polymerisation reactions only involving unsaturated carbon-to-carbon bonds
    • C09D187/005—Block or graft polymers not provided for in groups C09D101/00 - C09D185/04
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31645—Next to addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31692—Next to addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31971—Of carbohydrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
JP2013522283A 2010-07-30 2011-07-29 ナノ技術的への応用のための、多糖ブロックを持つコポリマー系のナノ領域で組織化された膜 Active JP6008854B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1056336A FR2963355B1 (fr) 2010-07-30 2010-07-30 Films minces nanoorganises a base de copolymeres a blocs polysaccharidiques pour des applications en nanotechnologie.
FR1056336 2010-07-30
PCT/FR2011/051843 WO2012013911A1 (fr) 2010-07-30 2011-07-29 Films minces nanoorganisés à base de copolymères à blocs polysaccharidiques pour des applications en nanotechnologie

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JP2013539420A JP2013539420A (ja) 2013-10-24
JP2013539420A5 JP2013539420A5 (https=) 2014-08-28
JP6008854B2 true JP6008854B2 (ja) 2016-10-19

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US (1) US9377684B2 (https=)
EP (1) EP2599109B1 (https=)
JP (1) JP6008854B2 (https=)
ES (1) ES2561673T3 (https=)
FR (1) FR2963355B1 (https=)
WO (1) WO2012013911A1 (https=)

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KR102079018B1 (ko) * 2015-12-25 2020-02-19 오지 홀딩스 가부시키가이샤 패턴 형성용 자기 조직화 조성물 및 패턴 형성 방법
TWI732825B (zh) * 2016-05-20 2021-07-11 日商王子控股股份有限公司 圖案形成用定向自組裝組成物、圖案形成用定向自組裝組成物用單體及圖案形成方法
JP2018046202A (ja) * 2016-09-15 2018-03-22 東芝メモリ株式会社 パターン形成方法、自己組織化材料、半導体装置の製造方法
EP3533524A4 (en) * 2016-10-28 2020-07-15 Oji Holdings Corporation PATTERN FORMING METHOD, BASE AGENT AND LAMINATE
WO2019182978A1 (en) * 2018-03-19 2019-09-26 Virginia Polytechnic Institute And State University Copolymer compatibilizers and uses thereof
CN114420787B (zh) * 2021-12-22 2024-06-14 西安隆基乐叶光伏科技有限公司 一种太阳能电池退火方法及退火设备

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JPH0884769A (ja) 1994-09-14 1996-04-02 Case Western Reserve Univ 非トロンボゲン形成インプラント表面
US6794245B2 (en) 2002-07-18 2004-09-21 Micron Technology, Inc. Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules
US7045851B2 (en) 2003-06-20 2006-05-16 International Business Machines Corporation Nonvolatile memory device using semiconductor nanocrystals and method of forming same
US20070155907A1 (en) 2005-12-30 2007-07-05 Zhao Jonathon Z Biologically active block copolymers
US7964107B2 (en) * 2007-02-08 2011-06-21 Micron Technology, Inc. Methods using block copolymer self-assembly for sub-lithographic patterning
FR2927467B1 (fr) 2008-02-08 2011-09-23 Commissariat Energie Atomique Procede de realisation d'une grille flottante ayant une alternance de lignes en premier et second materiaux
FR2932485A1 (fr) * 2008-06-12 2009-12-18 Univ Pasteur Polymere a liberation colique specifique quel que soit le ph
US20130022785A1 (en) * 2011-06-21 2013-01-24 Board of Regents, The University of the Texas System Oligosaccharide/silicon-containing block copolymers for lithography applications

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Publication number Publication date
FR2963355B1 (fr) 2013-07-12
US9377684B2 (en) 2016-06-28
JP2013539420A (ja) 2013-10-24
WO2012013911A1 (fr) 2012-02-02
FR2963355A1 (fr) 2012-02-03
EP2599109B1 (fr) 2015-11-04
US20130189609A1 (en) 2013-07-25
EP2599109A1 (fr) 2013-06-05
ES2561673T3 (es) 2016-02-29

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