JP5978521B2 - Diamond adhesion method using displacement plating and diamond adhesion apparatus used therefor - Google Patents

Diamond adhesion method using displacement plating and diamond adhesion apparatus used therefor Download PDF

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JP5978521B2
JP5978521B2 JP2012031339A JP2012031339A JP5978521B2 JP 5978521 B2 JP5978521 B2 JP 5978521B2 JP 2012031339 A JP2012031339 A JP 2012031339A JP 2012031339 A JP2012031339 A JP 2012031339A JP 5978521 B2 JP5978521 B2 JP 5978521B2
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plating
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JP2013044051A (en
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ソン・ナクジュー
パク・サンウック
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イファ・ダイヤモンド・インダストリー・カンパニー・リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Carbon And Carbon Compounds (AREA)

Description

本発明は、ダイヤモンド付着技術に関するものであり、より詳しくは、従来の電着方式によるダイヤモンド粒子付着に比べて、ダイヤモンド粒子を母材に付着させ易くする技術に関するものである。   The present invention relates to a diamond adhesion technique, and more particularly, to a technique for facilitating adhesion of diamond particles to a base material as compared with diamond particle adhesion by a conventional electrodeposition method.

ダイヤモンド粒子は、優れた硬度により切削用工具等に広く用いられている。   Diamond particles are widely used in cutting tools and the like due to their excellent hardness.

一般的に、ダイヤモンド粒子は図１或いは図２に示した形態で母材に付着及び固定される。図１に示した例はダイヤモンドが導電体でコーティングされているものであり、図２に示した例はダイヤモンドが導電体でコーティングされていないものである。   Generally, diamond particles are attached and fixed to a base material in the form shown in FIG. 1 or FIG. In the example shown in FIG. 1, diamond is coated with a conductor, and in the example shown in FIG. 2, diamond is not coated with a conductor.

先ず、導電体がコーティングされたダイヤモンド粒子１１０を微粒子付着層１１５を通じて母材１０１に付着する。この後、ダイヤモンド粒子１１０を含む微粒子付着層１１５の固定力向上のためにニッケル等を用いて育成めっき層１２０を形成する。ダイヤモンドが導電体でコーティングされている場合は、図１に示した例のように、ポリッシング１３０によりダイヤモンド粒子が露出するようにする。それに対して、ダイヤモンドが導電体でコーティングされていない場合は、図２に示した例のように、別途のポリッシング過程を経なくともダイヤモンド粒子が露出し得る。   First, diamond particles 110 coated with a conductor are attached to the base material 101 through the fine particle adhesion layer 115. Thereafter, the growth plating layer 120 is formed using nickel or the like in order to improve the fixing force of the fine particle adhesion layer 115 including the diamond particles 110. When diamond is coated with a conductor, diamond particles are exposed by polishing 130 as in the example shown in FIG. On the other hand, when diamond is not coated with a conductor, diamond particles can be exposed without going through a separate polishing process, as in the example shown in FIG.

一方、図１及び図２に示した例において、微粒子付着層１１５は、主にニッケル電解めっき方式で形成される。しかし、ニッケル電解めっき方式によるダイヤモンド付着方法は、複雑な前処理過程が必要になる。また、電解ニッケルめっき方式装置を構成するためには、整流器、陽極、電線等の複雑な構造が要求される。また、ニッケル電解めっきの効率を高めるためには、電極の電流密度を高めなければならなく、５０℃以上の比較的高い温度が維持されなければならない。また、ニッケル電解めっき方式によるダイヤモンド付着方法は、ニッケル電解めっき時にダイヤモンド粒子上にまた別のダイヤモンド粒子が付着する現象が度々発生する。   On the other hand, in the example shown in FIGS. 1 and 2, the fine particle adhesion layer 115 is mainly formed by a nickel electrolytic plating method. However, the diamond deposition method using nickel electrolytic plating requires a complicated pretreatment process. Moreover, in order to configure an electrolytic nickel plating system, a complicated structure such as a rectifier, an anode, and an electric wire is required. In order to increase the efficiency of nickel electroplating, the current density of the electrode must be increased and a relatively high temperature of 50 ° C. or higher must be maintained. Also, in the diamond adhesion method using the nickel electrolytic plating method, a phenomenon that another diamond particle adheres on the diamond particle frequently occurs during nickel electrolytic plating.

韓国公開特許第１０−２００３−００４７９１８号公報Korean Published Patent No. 10-2003-0047918 韓国登録特許第１０−０７５４００９号公報Korean Registered Patent No. 10-0750409

本発明の目的は、既存のニッケル電解めっき方式から抜け出して母材にダイヤモンド粒子を付着させ易くするダイヤモンド付着方法を提供することである。   An object of the present invention is to provide a diamond deposition method that makes it easy to deposit diamond particles on a base material by exiting from an existing nickel electrolytic plating system.

本発明の他の目的は、前記のダイヤモンド付着方法に利用できる装置を提供することである。   Another object of the present invention is to provide an apparatus that can be used in the diamond deposition method.

前記目的を達成するための本発明の実施例によるダイヤモンド付着方法は、被めっき母材よりイオン化傾向が低いめっき物質をイオン状態で含み、コーティングされていないダイヤモンド粒子が分散されている置換めっき液に前記被めっき母材を沈積して、前記めっき物質が前記被めっき母材に置換めっきされながら、前記ダイヤモンド粒子が前記めっき物質と共に前記被めっき母材に付着し、前記ダイヤモンド粒子が前記母材上に単一層の形態で露出していることを特徴とする。 In order to achieve the above object, a diamond adhesion method according to an embodiment of the present invention includes a substitution plating solution containing a plating substance having a lower ionization tendency than a base material to be plated in an ionic state, and in which uncoated diamond particles are dispersed. While depositing the substrate to be plated, the diamond particles adhere to the substrate to be plated together with the plating material while the plating material is displacement-plated on the substrate to be plated, and the diamond particles are on the substrate. It is characterized by being exposed in the form of a single layer.

このとき、前記被めっき母材を先に酸洗処理した後、前記めっき物質を置換めっきすることが好ましい。   At this time, it is preferable that the plating material is subjected to displacement plating after the base material to be plated is first pickled.

また、めっき物質の置換めっき後にはダイヤモンド粒子の固定力向上のために育成めっきが施されることが好ましい。   Moreover, it is preferable that the growth plating is performed after the displacement plating of the plating substance in order to improve the fixing force of the diamond particles.

また、前記被めっき母材は、ワイヤ形態又はプレート形態になり得る。また、前記被めっき母材は、定められた形態を有する工具材であり得る。   In addition, the base material to be plated can be in the form of a wire or a plate. Moreover, the said to-be-plated base material may be a tool material which has a defined form.

前記の目的を達成するための本発明の実施例にかかるダイヤモンド付着装置は、めっき容器と、前記めっき容器内に貯蔵され、被めっき母材よりイオン化傾向が低いめっき物質をイオン状態で含み、コーティングされていないダイヤモンド粒子が分散されている置換めっき液を含み、前記被めっき母材が前記置換めっき液に沈積されて前記被めっき母材と前記めっき物質の置換めっきが行われると共に、前記ダイヤモンド粒子が前記めっき物質と一緒に前記被めっき母材に付着し、前記ダイヤモンド粒子が前記母材上に単一層の形態で露出していることを特徴とする。 Diamond deposition apparatus according to an embodiment of the present invention for achieving the above object comprises a plating vessel, stored in the plating vessel, the ionization tendency lower plating material than be plated base metal in the ionic state, the coating A substitution plating solution in which diamond particles that have not been dispersed are dispersed, and the substrate to be plated is deposited in the substitution plating solution to perform substitution plating of the substrate to be plated and the plating substance, and the diamond particles Is attached to the base material to be plated together with the plating substance, and the diamond particles are exposed in a single layer form on the base material.

このとき、前記めっき容器内に配置され、前記被めっき母材が連続的に前記置換めっき液に沈積及び排出されるようにする方向転換手段をさらに含むことができる。   At this time, it may further include a direction changing means disposed in the plating container so that the base material to be plated is continuously deposited and discharged in the replacement plating solution.

本発明にかかるダイヤモンド付着方法は、置換めっき方法を用いることにより簡単な工程でも優れた被覆力を有するめっき層を形成でき、これによりダイヤモンド粒子も母材に付着させ易くするという長所がある。   The diamond adhesion method according to the present invention has an advantage that a plating layer having an excellent covering power can be formed even by a simple process by using a displacement plating method, thereby facilitating adhesion of diamond particles to a base material.

また、本発明にかかるダイヤモンド付着方法は、ニッケル電解めっき方式を用いたダイヤモンド付着方法に比べて比較的低い温度でも実施でき、整流器や陽極が不要なため工程コストを節減できる。   In addition, the diamond deposition method according to the present invention can be carried out at a relatively low temperature as compared with the diamond deposition method using the nickel electrolytic plating method, and the rectifier and the anode are unnecessary, so that the process cost can be reduced.

また、本発明にかかるダイヤモンド付着方法は、被めっき母材とめっき物質との置換反応によるめっき層が一定の厚さまでのみ形成されるため、ダイヤモンド粒子を単一層の形態で付着できるという長所がある。   In addition, the diamond adhesion method according to the present invention has an advantage in that diamond particles can be adhered in a single layer form because a plating layer formed by a substitution reaction between a base material to be plated and a plating substance is formed only to a certain thickness. .

母材にダイヤモンド粒子が付着した例を示したものである。It shows an example in which diamond particles adhere to the base material. 母材にダイヤモンド粒子が付着した例を示したものである。It shows an example in which diamond particles adhere to the base material. 本発明の実施例にかかる置換めっきを用いたダイヤモンド付着装置を概略的に示したものである。1 schematically shows a diamond deposition apparatus using displacement plating according to an embodiment of the present invention. 本発明の他の実施例にかかる置換めっきを用いたダイヤモンド付着装置を概略的に示したものである。3 schematically shows a diamond deposition apparatus using displacement plating according to another embodiment of the present invention. 本発明の実施例にかかる置換めっきを用いたダイヤモンド付着方法を示した順序図である。It is the flowchart which showed the diamond adhesion method using the displacement plating concerning the Example of this invention. ワイヤ沈積時間によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by wire deposition time. ワイヤ沈積時間によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by wire deposition time. ワイヤ沈積時間によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by wire deposition time. ワイヤ沈積時間によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by wire deposition time. 置換めっき液内のダイヤモンド粒子濃度によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by the diamond particle density | concentration in a displacement plating solution. 置換めっき液内のダイヤモンド粒子濃度によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by the diamond particle density | concentration in a displacement plating solution. 置換めっき液内のダイヤモンド粒子濃度によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by the diamond particle density | concentration in a displacement plating solution. 置換めっき液内のダイヤモンド粒子濃度によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by the diamond particle density | concentration in a displacement plating solution. 置換めっき液内のダイヤモンド粒子濃度によるダイヤモンド粒子付着結果を示した写真である。It is the photograph which showed the diamond particle adhesion result by the diamond particle density | concentration in a displacement plating solution. 置換めっき後、ダイヤモンド粒子が母材に付着した例を示した写真である。It is the photograph which showed the example which the diamond particle adhered to the base material after displacement plating. 置換めっき後、ダイヤモンド粒子が母材に付着した例を示した写真である。It is the photograph which showed the example which the diamond particle adhered to the base material after displacement plating. 置換めっき後、ダイヤモンド粒子が母材に付着した例を示した写真である。It is the photograph which showed the example which the diamond particle adhered to the base material after displacement plating. 置換めっき後、ダイヤモンド粒子が母材に付着した例を示した写真である。It is the photograph which showed the example which the diamond particle adhered to the base material after displacement plating.

本発明の利点及び特徴、そしてそれらを達成する方法は、添付の図面と共に詳しく後述する実施例を参照すると明確になる。しかし本発明は、以下で開示する実施例に限定されるものではなく、相違する多様な形態に具現され、単に本実施例は本発明の開示が完全になるようにし、本発明が属する技術分野で通常の知識を有する者に発明の範疇を完全に知らせるために提供するものであり、本発明は請求項の範疇によって定義されるだけである。明細書全体に亘り、同一参照符号は同一構成要素を指す。   Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various different forms, and the embodiments are merely to make the disclosure of the present invention complete, and to which the present invention belongs. In order to fully inform those skilled in the art of the scope of the invention, the present invention is only defined by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

以下、添付の図面を参照して本発明の好ましい実施例にかかる置換めっきを用いたダイヤモンド付着方法及びこれに用いられるダイヤモンド付着装置に関して詳しく説明する。   Hereinafter, a diamond deposition method using displacement plating and a diamond deposition apparatus used therefor according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

本発明において図１及び図２に示した微粒子付着層１１５を形成するために用いられる置換めっきは、イオン化傾向の違いを用いたものである。   In the present invention, the displacement plating used to form the fine particle adhesion layer 115 shown in FIGS. 1 and 2 uses a difference in ionization tendency.

つまり、本発明ではイオン化傾向が高い母材金属とイオン化傾向が相対的に低いめっき金属イオンの置換反応を用いる。母材金属は電子を得てイオン化しようとし、めっき金属イオンは非イオン化しようとすると共に、母材に置換めっきが行われる。   That is, in the present invention, a substitution reaction between a base metal having a high ionization tendency and a plating metal ion having a relatively low ionization tendency is used. The base metal gets electrons and tries to ionize, the plating metal ions try to be non-ionized, and the base metal is subjected to displacement plating.

広く知られているように、金属のイオン化傾向は水素（Ｈ）を基準に次のように表される。
Ｌｉ＞Ｋ＞Ｂａ＞Ｃａ＞Ｎａ＞Ｍｇ＞Ａｌ＞Ｚｎ＞Ｆｅ＞Ｎｉ＞Ｓｎ＞Ｐｂ＞Ｈ
Ｈ＞Ｃｕ＞Ｈｇ＞Ａｇ＞Ｐｔ＞Ａｕ As is widely known, the ionization tendency of a metal is expressed as follows based on hydrogen (H).
Li>K>Ba>Ca>Na>Mg>Al>Zn>Fe>Ni>Sn>Pb> H
H>Cu>Hg>Ag>Pt> Au

例えば、母材金属がＦｅで、めっき金属がイオン状態で存在するＣｕの場合、イオン化傾向が高いＦｅとイオン化傾向が相対的に低いＣｕ間には、次のような置換反応が表れる。
Ｆｅ＋Ｃｕ２＋→Ｆｅ２＋＋Ｃｕ For example, when the base metal is Fe and the plating metal is Cu in an ionic state, the following substitution reaction appears between Fe having a high ionization tendency and Cu having a relatively low ionization tendency.
Fe + Cu 2+ → Fe 2+ + Cu

よって、本発明でめっきの対象になる母材、つまり、被めっき母材の場合はイオン化傾向が相対的に高い金属を用い、イオン状態で存在するめっき金属の場合はイオン化傾向が相対的に低い金属を用いる。   Therefore, in the present invention, a base material to be plated, that is, a base material to be plated is a metal having a relatively high ionization tendency, and a plating metal existing in an ionic state has a relatively low ionization tendency. Use metal.

図３は、本発明の実施例にかかる置換めっきを用いたダイヤモンド付着装置を概略的に示したものである。   FIG. 3 schematically shows a diamond deposition apparatus using displacement plating according to an embodiment of the present invention.

図３を参照すると、図示した装置は、めっき容器３１０及び置換めっき液３２０を含む。   Referring to FIG. 3, the illustrated apparatus includes a plating container 310 and a displacement plating solution 320.

めっき容器３１０は、置換めっきが行われる内部空間を提供し、前記内部空間には置換めっき液３２０が貯蔵される。   The plating container 310 provides an internal space in which displacement plating is performed, and a displacement plating solution 320 is stored in the internal space.

めっき容器３１０内に貯蔵される置換めっき液３２０は、置換めっきのために、被めっき母材３０１よりイオン化傾向が低いめっき物質をイオン状態で含む。また、置換めっき液３２０には置換めっき時にダイヤモンド粒子がめっき物質と共に被めっき母材３０１に付着されるように、ダイヤモンド粒子３２２が分散されている。   The replacement plating solution 320 stored in the plating container 310 contains a plating substance having a lower ionization tendency than the base material 301 in an ionic state for replacement plating. In addition, diamond particles 322 are dispersed in the displacement plating solution 320 so that the diamond particles adhere to the base material 301 to be plated together with the plating substance during displacement plating.

置換めっき液３２０は、硫酸銅（ＣｕＳＯ４）水溶液、硝酸銀（ＡｇＮＯ３）水溶液等のように、銅や銀がイオン（Ｃｕ２＋，Ａｇ＋）の形態で含まれ得る溶液になり得る。 The displacement plating solution 320 can be a solution that can contain copper and silver in the form of ions (Cu 2+ , Ag + ), such as a copper sulfate (CuSO 4 ) aqueous solution and a silver nitrate (AgNO 3) aqueous solution.

ダイヤモンド粒子３２２は、図１５〜図１８に示した写真を参照すると、約２０μｍ程度のものを利用できる。しかし、必ずしもこれに制限されるのではない。   The diamond particles 322 can be about 20 μm with reference to the photographs shown in FIGS. However, it is not necessarily limited to this.

被めっき母材３０１が置換めっき液３２０に沈積されると、被めっき母材３０１とめっき物質の置換めっきが行われる。このとき、めっき物質が被めっき母材３０１側に移動することにより、置換めっき液３２０に分散されたダイヤモンド粒子３２２も一緒に被めっき母材３０１側に移動し、その結果、めっき物質と一緒に被めっき母材３０１に付着する。   When the base material 301 to be plated is deposited in the replacement plating solution 320, replacement plating of the base material 301 and the plating material is performed. At this time, when the plating substance moves to the base material 301 to be plated, the diamond particles 322 dispersed in the displacement plating solution 320 also move to the base material 301 side as a result, and as a result, together with the plating substance. It adheres to the base material 301 to be plated.

このような置換めっきを用いたダイヤモンド粒子付着の場合、めっきのための電極や整流器が不要で、常温でも実施できる簡単な工程でめっき及びダイヤモンド粒子の付着が可能なため、工程コストの節減に有利である。   In the case of diamond particle adhesion using such displacement plating, electrode and rectifier for plating are not required, and plating and diamond particle adhesion are possible with a simple process that can be carried out at room temperature, which is advantageous for saving process costs. It is.

また、置換めっきの特性上、一定の厚さまでめっきが行われると、それ以上はめっきが進行しない。よって、ダイヤモンド粒子３２２を単一層の形態で付着できる。   Further, due to the properties of displacement plating, when plating is performed to a certain thickness, the plating does not proceed further. Thus, diamond particles 322 can be deposited in a single layer form.

被めっき母材３０１を構成する物質は、工具材等に広く用いられるアルミニウム（Ａ ｌ）、亜鉛（Ｚｎ）、鉄（Ｆｅ）等を用いることができる。   As a material constituting the base material 301 to be plated, aluminum (Al), zinc (Zn), iron (Fe), or the like widely used for tool materials and the like can be used.

めっき物質は、亜鉛（Ｚｎ）、鉄（Ｆｅ）、ニッケル（Ｎｉ）、銅（Ｃｕ）、銀（Ａｇ）、白金（Ｐｔ）、金（Ａｕ）等を用いることができる。このとき、めっき物質は被めっき母材よりイオン化傾向が低いものを用いる。   As the plating substance, zinc (Zn), iron (Fe), nickel (Ni), copper (Cu), silver (Ag), platinum (Pt), gold (Au), or the like can be used. At this time, a plating substance having a lower ionization tendency than the base material to be plated is used.

このような点を考慮すると、被めっき母材とめっき物質間の置換反応は次のような例になり得る。
Ｆｅ＋Ｃｕ２＋→Ｆｅ２＋＋Ｃｕ
Ｚｎ＋Ｃｕ２＋→Ｚｎ２＋＋Ｃｕ
２Ａｌ＋３Ｃｕ２＋→２Ａｌ３＋＋３Ｃｕ
２Ａｌ＋３Ｚｎ２＋→２Ａｌ３＋＋３Ｚｎ
２Ａｌ＋３Ｎｉ２＋→２Ａｌ３＋＋３Ｎｉ
Ｆｅ＋Ｎｉ２＋→Ｆｅ２＋＋Ｎｉ
Ｚｎ＋Ｎｉ２＋→Ｚｎ２＋＋Ｎｉ Considering such points, the substitution reaction between the base material to be plated and the plating substance can be the following example.
Fe + Cu 2+ → Fe 2+ + Cu
Zn + Cu 2+ → Zn 2+ + Cu
2Al + 3Cu 2+ → 2Al 3+ + 3Cu
2Al + 3Zn 2+ → 2Al 3+ + 3Zn
2Al + 3Ni 2+ → 2Al 3+ + 3Ni
Fe + Ni 2+ → Fe 2+ + Ni
Zn + Ni 2+ → Zn 2+ + Ni

一方、被めっき母材３０１はワイヤ形態、プレート形態になり得る。また、被めっき母材３０１は定められた形態を有する工具材になり得る。   On the other hand, the base material 301 to be plated can be in the form of a wire or a plate. Moreover, the to-be-plated base material 301 can be a tool material having a predetermined form.

被めっき母材３０１の形態によって、置換めっき液３２０に沈積される方式も図３及び図４に示した例のように相違し得る。   Depending on the form of the base material 301 to be plated, the method of depositing in the replacement plating solution 320 may be different as in the examples shown in FIGS.

つまり、被めっき母材３０１がワイヤ形態あるいは長いプレート形態の場合、図３に示したように、被めっき母材が連続的に置換めっき液３２０に沈積及び排出される方式がより好ましい。   That is, when the base material 301 to be plated is in the form of a wire or a long plate, a method in which the base material to be plated is continuously deposited and discharged in the replacement plating solution 320 as shown in FIG. 3 is more preferable.

一方、被めっき母材３０１がプレート形態や定められた形態の工具材の場合は、図４に示した例のように、被めっき母材３０１を一定時間沈積させる方式がより好ましい。このとき、被めっき母材３０１ｂは、比重の差あるいは別途の手段等により、置換めっき液３２０に完全に沈積されたり、或いはダイヤモンド付着が予定の一部分だけ沈積し得る。   On the other hand, when the base material 301 to be plated is a tool material having a plate shape or a predetermined shape, a method of depositing the base material 301 to be plated for a certain period of time is more preferable as in the example shown in FIG. At this time, the to-be-plated base material 301b may be completely deposited on the replacement plating solution 320 or may be deposited only on a predetermined portion due to the difference in specific gravity or other means.

また、図３に示したように、被めっき母材が連続的に置換めっき液に沈積及び排出される方式が用いられる場合は、被めっき母材の移送のためにめっき容器内に方向転換手段３３０をさらに含むことができる。   In addition, as shown in FIG. 3, when a method in which the base material to be plated is continuously deposited and discharged in the replacement plating solution is used, a direction changing means is provided in the plating container for transferring the base material to be plated. 330 may further be included.

方向転換手段３３０は、一つ以上のロールの形態からなり得る。その例として、方向転換手段３３０は図３に示した例のように、入側ロール及び出側ロールを含み得る。図３に示した二つのロールのうち一つは入側ロールになり、もう一つは出側ロールになる。   The direction changing means 330 may be in the form of one or more rolls. As an example, the direction changing means 330 may include an entry side roll and an exit side roll as in the example shown in FIG. One of the two rolls shown in FIG. 3 is an entrance roll, and the other is an exit roll.

入側ロールは、被めっき母材３０１が置換めっき液３２０に沈積されるように被めっき母材３０１の方向を転換させる役割をする。出側ロールは置換めっき及びダイヤモンド粒子付着後、被めっき母材３０１が置換めっき液３２０から排出されるように、被めっき母材の方向を転換させる役割をする。   The entry-side roll serves to change the direction of the base material 301 to be plated so that the base material 301 is deposited in the replacement plating solution 320. The outlet roll serves to change the direction of the base material to be plated so that the base material 301 to be plated is discharged from the replacement plating solution 320 after the replacement plating and the diamond particle adhesion.

図５は、本発明にかかる置換めっきを用いたダイヤモンド付着方法を示した順序図である。   FIG. 5 is a flow chart showing a diamond deposition method using displacement plating according to the present invention.

図５を参照すると、本発明ではダイヤモンド粒子付着のために置換めっき方式を用いる。より具体的には、本発明にかかるダイヤモンド粒子付着方法は、被めっき母材の脱脂／酸洗段階（Ｓ５１０）及び置換めっき／ダイヤモンド粒子付着段階（Ｓ５２０）を含み得る。   Referring to FIG. 5, the present invention uses a displacement plating method for diamond particle adhesion. More specifically, the diamond particle adhesion method according to the present invention may include a degreasing / pickling step (S510) and a displacement plating / diamond particle deposition step (S520) of the base material to be plated.

脱脂／酸洗段階（Ｓ５１０）では、被めっき母材を先に酸洗処理して、母材表面の酸化物等を除去し表面を活性化できる。酸洗前は、母材表面の有機物等を除去するための脱脂過程が含まれる。   In the degreasing / pickling step (S510), the surface of the base material to be plated can be pickled first to remove oxides on the surface of the base material and activate the surface. Before pickling, a degreasing process for removing organic substances on the surface of the base material is included.

置換めっき／ダイヤモンド粒子付着段階（Ｓ５２０）では、被めっき母材よりイオン化傾向が低いめっき物質をイオン状態で含み、ダイヤモンド粒子が分散されている置換めっき液に被めっき母材を沈積する。被めっき母材が置換めっき液に沈積された状態で、めっき物質が被めっき母材に置換めっきされる。これと共に、ダイヤモンド粒子がめっき物質と一緒に被めっき母材に付着する。   In the replacement plating / diamond particle adhesion step (S520), the base material to be plated is deposited in a replacement plating solution containing a plating substance having an ionization tendency lower than that of the base material to be plated in an ionic state and in which diamond particles are dispersed. In a state where the base material to be plated is deposited in the replacement plating solution, the plating substance is subjected to replacement plating on the base material to be plated. At the same time, diamond particles adhere to the substrate to be plated together with the plating material.

置換めっき後には、ダイヤモンド粒子が母材により堅固に付着されて固定力を向上させるために育成めっきが施される（Ｓ５３０）。   After the replacement plating, the diamond particles are firmly attached to the base material, and the growth plating is performed to improve the fixing force (S530).

一方、置換めっき液において、めっき物質の濃度は置換めっきの効率等を考慮すると０．５Ｍ〜３Ｍ程度を提示でき、ダイヤモンド粒子の濃度は５０ｃｔ／Ｌ〜１０００ｃｔ／Ｌ程度を提示できる。しかし、めっき物質の濃度、ダイヤモンド粒子の濃度は、必ずしもこれに限定されるのではなく、被めっき母材の沈積時間、めっき容器のサイズ、形態等によって適切に選択できる。   On the other hand, in the displacement plating solution, the concentration of the plating substance can be about 0.5M to 3M in consideration of the efficiency of displacement plating, and the concentration of diamond particles can be about 50 ct / L to 1000 ct / L. However, the concentration of the plating substance and the concentration of the diamond particles are not necessarily limited to these, and can be appropriately selected depending on the deposition time of the base material to be plated, the size and form of the plating container, and the like.

同様に、置換めっき時の被めっき母材の沈積時間は、置換めっきの効率、剥離発生等を考慮すると、５秒〜１分程度を提示できるが、必ずしもこれに限定されるのではない。   Similarly, the deposition time of the base material to be plated at the time of displacement plating can be about 5 seconds to 1 minute in consideration of the efficiency of displacement plating, occurrence of peeling, etc., but is not necessarily limited thereto.

図６〜図９は、ワイヤ沈積時間によるダイヤモンド粒子付着結果を示した写真である。   6 to 9 are photographs showing the results of diamond particle adhesion according to the wire deposition time.

実験のために、１Ｌ体積の１Ｍ硫酸銅溶液に平均粒径が約２０μｍのダイヤモンド粒子４００ｃｔを分散し、各Ｆｅ材質の母材上に置換めっきした。   For the experiment, 400 ct of diamond particles having an average particle size of about 20 μm were dispersed in a 1 L volume of 1M copper sulfate solution and subjected to displacement plating on the base material of each Fe material.

図６〜図９を参照すると、同一な条件で母材の沈積時間が長いほどダイヤモンド粒子付着量が大体的に増加することが分かる。   Referring to FIGS. 6 to 9, it can be seen that as the base material deposition time is longer under the same conditions, the amount of diamond particle adhesion generally increases.

図１０〜図１４は、置換めっき液内のダイヤモンド粒子濃度によるダイヤモンド粒子付着結果を示した写真である。   10 to 14 are photographs showing diamond particle adhesion results depending on the diamond particle concentration in the displacement plating solution.

実験のために、１Ｍ硫酸銅溶液に平均粒径が約２０μｍのダイヤモンド粒子を５０ｃｔ／Ｌ（図１０）、１００ｃｔ／Ｌ（図１１）、２００ｃｔ／Ｌ（図１２）、５００ｃｔ／Ｌ（図１３）及び１０００ｃｔ／Ｌ（図１４）の濃度に分散し、各Ｆｅ材質の母材上にめっきした。   For the experiment, 50 ct / L (FIG. 10), 100 ct / L (FIG. 11), 200 ct / L (FIG. 12), 500 ct / L (FIG. 13) of diamond particles having an average particle diameter of about 20 μm in a 1 M copper sulfate solution. ) And 1000 ct / L (FIG. 14), and plated on the base material of each Fe material.

図１０〜図１４を参照すると、置換めっき液内のダイヤモンド粒子濃度が増加するほど大体的に付着量が増加することが分かる。   Referring to FIGS. 10 to 14, it can be seen that the amount of adhesion generally increases as the diamond particle concentration in the displacement plating solution increases.

図１５〜図１８は、置換めっき後、ダイヤモンド粒子が母材に付着した例を示した写真である。   15 to 18 are photographs showing examples of diamond particles adhering to the base material after displacement plating.

図１５〜図１８を参照すると、簡単な置換めっきによってダイヤモンド粒子が母材上に付着できることが分かる。   Referring to FIGS. 15 to 18, it can be seen that diamond particles can be deposited on the base material by simple displacement plating.

上述のように、本発明にかかるダイヤモンド付着方法は、置換めっき方法を用いることにより、簡単な工程でも容易にダイヤモンド粒子を母材に付着できる。   As described above, in the diamond adhesion method according to the present invention, diamond particles can be easily adhered to a base material by a simple process by using a displacement plating method.

また、本発明にかかるダイヤモンド付着方法は、被めっき母材とめっき物質との置換反応によるめっき層が一定の厚さまでのみ形成されるため、ダイヤモンド粒子を単一層の形態で付着できる。   Further, in the diamond adhesion method according to the present invention, since the plating layer formed by the substitution reaction between the base material to be plated and the plating substance is formed only up to a certain thickness, diamond particles can be adhered in a single layer form.

以上では、本発明の実施例を中心に説明したが、当業者のレベルで多様な変更や変形を加えることができる。このような変更や変形が本発明の範囲から外れない限り、本発明に属すると言える。よって、本発明の権利範囲は以下に記載する請求の範囲によって判断しなければならない。   Although the embodiments of the present invention have been described above, various changes and modifications can be made at the level of those skilled in the art. As long as such changes and modifications do not depart from the scope of the present invention, it can be said to belong to the present invention. Therefore, the scope of rights of the present invention must be determined by the claims described below.

１０１………母材、１１０………ダイヤモンド粒子、１１５………微粒子付着層、１２０………育成めっき層、１３０………ポリッシングライン、３０１………被めっき母材、３１０………めっき容器、３２０………置換めっき液、３２２………ダイヤモンド粒子、３３０………方向転換手段 101 ......... Base material, 110 ......... Diamond particles, 115 ......... Particle adhesion layer, 120 ...... Growth plating layer, 130 ......... Polishing line, 301 ......... Base material to be plated, 310 ......... Plating container, 320 ......... Displacement plating solution, 322 ......... Diamond particles, 330 ......... Direction changing means

Claims (11)

被めっき母材よりイオン化傾向が低いめっき物質をイオン状態で含み、コーティングされていないダイヤモンド粒子が分散されている置換めっき液に前記被めっき母材を沈積して、
前記めっき物質が前記被めっき母材に置換めっきされながら、前記ダイヤモンド粒子が前記めっき物質と共に前記被めっき母材に付着し、前記ダイヤモンド粒子が前記母材上に単一層の形態で露出していることを特徴とするダイヤモンド付着方法。 A plating substance having a lower ionization tendency than the base material to be plated is included in an ionic state, and the base material to be plated is deposited in a replacement plating solution in which uncoated diamond particles are dispersed,
While the plating material is displacement-plated on the base material to be plated, the diamond particles adhere to the base material to be plated together with the plating material, and the diamond particles are exposed on the base material in the form of a single layer. The diamond adhesion method characterized by the above-mentioned. 前記被めっき母材を先に脱脂及び酸洗処理した後、前記めっき物質を置換めっきすることを特徴とする請求項１に記載のダイヤモンド付着方法。   2. The diamond adhesion method according to claim 1, wherein the plating material is subjected to displacement plating after the base material to be plated is first degreased and pickled. 前記めっき物質の置換めっき後、前記ダイヤモンド粒子の固定力向上のために育成めっきを施すことを特徴とする請求項１に記載のダイヤモンド付着方法。   2. The diamond adhesion method according to claim 1, wherein after the plating of the plating substance, growth plating is performed to improve the fixing force of the diamond particles. 前記被めっき母材は、アルミニウム（Ａｌ）、亜鉛（Ｚｎ）、及び鉄（Ｆｅ）から選ばれ、
前記めっき物質は、亜鉛（Ｚｎ）、鉄（Ｆｅ）、ニッケル（Ｎｉ）、銅（Ｃｕ）、銀（Ａｇ）、白金（Ｐｔ）、及び金（Ａｕ）から選ばれるが、前記被めっき母材よりイオン化傾向が低い物質から選ばれることを特徴とする請求項１に記載のダイヤモンド付着方法。 The base material to be plated is selected from aluminum (Al), zinc (Zn), and iron (Fe),
The plating material is selected from zinc (Zn), iron (Fe), nickel (Ni), copper (Cu), silver (Ag), platinum (Pt), and gold (Au). The diamond deposition method according to claim 1, wherein the diamond deposition method is selected from substances having a lower ionization tendency. 前記被めっき母材は、
ワイヤ形態であることを特徴とする請求項１に記載のダイヤモンド付着方法。 The plated base material is
The diamond deposition method according to claim 1, wherein the method is a wire form. 前記被めっき母材は、
プレート形態であることを特徴とする請求項１に記載のダイヤモンド付着方法。 The plated base material is
The diamond deposition method according to claim 1, wherein the method is a plate form. 前記被めっき母材は、
定められた形態を有する工具材であることを特徴とする請求項１に記載のダイヤモンド付着方法。 The plated base material is
The diamond adhesion method according to claim 1, wherein the diamond adhesion method is a tool material having a predetermined form. めっき容器と、
前記めっき容器内に貯蔵され、被めっき母材よりイオン化傾向が低いめっき物質をイオン状態で含み、コーティングされていないダイヤモンド粒子が分散されている置換めっき液を含み、
前記被めっき母材が前記置換めっき液に沈積されて前記被めっき母材と前記めっき物質の置換めっきが行われると共に、前記ダイヤモンド粒子が前記めっき物質と一緒に前記被めっき母材に付着し、前記ダイヤモンド粒子が前記母材上に単一層の形態で露出していることを特徴とするダイヤモンド付着装置。 A plating container;
Stored in the plating container, containing a plating substance having a lower ionization tendency than the base material to be plated in an ionic state, including a displacement plating solution in which uncoated diamond particles are dispersed,
The plating base material is deposited in the replacement plating solution to perform replacement plating of the plating base material and the plating substance, and the diamond particles adhere to the plating base material together with the plating substance, The diamond adhesion apparatus, wherein the diamond particles are exposed in the form of a single layer on the base material. 前記被めっき母材は、アルミニウム（Ａｌ）、亜鉛（Ｚｎ）、及び鉄（Ｆｅ）から選ばれ、
前記めっき物質は、亜鉛（Ｚｎ）、鉄（Ｆｅ）、ニッケル（Ｎｉ）、銅（Ｃｕ）、銀（Ａｇ）、白金（Ｐｔ）、及び金（Ａｕ）から選ばれるが、前記被めっき母材よりイオン化傾向が低い物質から選ばれることを特徴とする請求項８に記載のダイヤモンド付着装置。 The base material to be plated is selected from aluminum (Al), zinc (Zn), and iron (Fe),
The plating material is selected from zinc (Zn), iron (Fe), nickel (Ni), copper (Cu), silver (Ag), platinum (Pt), and gold (Au). 9. The diamond deposition apparatus according to claim 8, wherein the diamond deposition apparatus is selected from substances having a lower ionization tendency. 前記装置は、
前記めっき容器内に配置され、前記被めっき母材が連続的に前記置換めっき液に沈積及び排出されるようにする方向転換手段を含むことを特徴とする請求項８に記載のダイヤモンド付着装置。 The device is
9. The diamond adhesion apparatus according to claim 8, further comprising a direction changing means disposed in the plating container so as to continuously deposit and discharge the base material to be plated on the replacement plating solution. 前記方向転換手段は、
前記被めっき母材が前記置換めっき液に沈積するようにする入側ロールと、
前記被めっき母材が前記置換めっき液から排出されるようにする出側ロールを含むことを特徴とする請求項１０に記載のダイヤモンド付着装置。 The direction changing means includes
An entry-side roll that allows the base material to be plated to be deposited in the displacement plating solution;
The diamond adhering apparatus according to claim 10, further comprising a delivery roll that allows the base material to be plated to be discharged from the displacement plating solution.
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