JP5970986B2 - Manufacturing method of wafer substrate - Google Patents

Description

  Embodiments discussed herein relate to a method of manufacturing a wafer substrate that bonds a support substrate to a wafer substrate.

  Recent microchips have a three-dimensional structure using multichip modules and through-silicon vias that mount and seal multiple device chips on a multilayer wiring board due to the limitations of high integration and miniaturization. The demand for semiconductor devices is increasing.

  The wafer process is also required to handle a thin wafer substrate. In addition to wafer thinning and subsequent transport, processing such as via formation and wiring formation on the thinned wafer substrate itself has become necessary. Since the thinned wafer substrate cannot be supported by itself, some system for supporting the wafer substrate is required, and a method using a support substrate (carrier wafer) is generally used.

Wafer support systems using a support substrate include the following.
(1) A thermoplastic material is used for the adhesive, and peeling is performed by a heat slide method or dissolution by a solvent.
(2) A glass support substrate is used and a release layer of a laser light receiving layer or a UV absorbing layer is provided at the interface of the adhesive layer, and laser is scanned or UV irradiated when peeling.
(3) In order to facilitate peeling, only the periphery of the wafer edge is bonded with a bond layer.
(4) Bonding itself is performed in a vacuum.
and so on.

JP 2012-4522 A

  Slide peeling using a thermoplastic material tends to break the wafer substrate, and a large-diameter wafer has a large slide-off force. For laser peeling, a glass support substrate with good laser transparency is essential, and when the wafer substrate is a Si substrate, the influence of the difference in thermal expansion coefficient is likely to occur.

  In the case of bonding only the periphery of the wafer substrate, there is a problem that the dissolution rate of the peripheral adhesive layer is slow and the throughput cannot be obtained. In addition, these are essential steps for cleaning the adhesive layer, which has a problem such as adhesion of adhesive residue.

  In the support system by vacuum bonding without using the bond layer, there is no concern that an air layer is taken into the bonding interface and voids are generated because the wafer substrate and the support substrate contact each other in vacuum.

  However, if a notch that breaks the vacuum from the state where the entire surface is vacuum-bonded is peeled off, the device remains missing, and peeling due to unevenness on the bonding surface makes it difficult to peel off.

  In one aspect, a method for manufacturing a wafer substrate according to an embodiment aims to facilitate peeling of a support substrate and to improve yield.

  A wafer substrate manufacturing method according to an embodiment includes a bonding material positioned between a wafer substrate and a support substrate that supports the wafer substrate, at least one of the wafer substrate and the support substrate, and the bonding material. And a void portion that forms a closed space and is continuous from the peripheral side to the center side of the bonding material. In the method for manufacturing a wafer substrate, the wafer substrate and the support substrate are bonded together. Further, in the method for manufacturing a wafer substrate, the closed space of the gap portion is opened, and the wafer substrate and the support substrate are peeled off.

  According to the method for manufacturing a wafer substrate according to the embodiment, the support substrate can be easily peeled, and the yield can be improved.

It is a top view which shows the joining layer in 1st Embodiment. It is II-II sectional drawing of FIG. It is sectional drawing (the 1) for demonstrating the outline | summary of the pressure reduction joining in 1st Embodiment. It is sectional drawing (the 2) for demonstrating the outline | summary of the pressure reduction bonding in 1st Embodiment. It is sectional drawing (the 3) for demonstrating the outline | summary of the pressure reduction joining in 1st Embodiment. It is a schematic block diagram which shows the manufacturing apparatus of the wafer substrate which concerns on 1st Embodiment. It is sectional drawing (the 1) for demonstrating the manufacturing method of the wafer substrate which concerns on 1st Embodiment. It is sectional drawing (the 2) for demonstrating the manufacturing method of the wafer substrate which concerns on 1st Embodiment. It is sectional drawing (the 3) for demonstrating the manufacturing method of the wafer substrate which concerns on 1st Embodiment. FIG. 8 is a cross-sectional view (No. 4) for describing the method of manufacturing the wafer substrate according to the first embodiment. It is sectional drawing (the 5) for demonstrating the manufacturing method of the wafer substrate which concerns on 1st Embodiment. It is a top view which shows the joining layer in 2nd Embodiment. It is VII-VII sectional drawing of FIG. It is sectional drawing (the 1) for demonstrating the outline | summary of the pressure reduction joining in 3rd Embodiment. It is sectional drawing (the 2) for demonstrating the outline | summary of the pressure reduction joining in 3rd Embodiment. It is sectional drawing (the 3) for demonstrating the outline | summary of the pressure reduction joining in 3rd Embodiment. It is sectional drawing (the 1) for demonstrating the manufacturing method of the wafer substrate which concerns on 4th Embodiment. It is sectional drawing (the 2) for demonstrating the manufacturing method of the wafer substrate which concerns on 4th Embodiment. It is sectional drawing (the 3) for demonstrating the manufacturing method of the wafer substrate which concerns on 4th Embodiment. It is sectional drawing (the 4) for demonstrating the manufacturing method of the wafer substrate which concerns on 4th Embodiment. It is sectional drawing (the 5) for demonstrating the manufacturing method of the wafer substrate which concerns on 4th Embodiment.

Hereinafter, a wafer substrate manufacturing method and a manufacturing apparatus according to embodiments will be described with reference to the drawings.
<First Embodiment>
FIG. 1 is a plan view showing the bonding layer 13 in the first embodiment.
2 is a cross-sectional view taken along the line II-II in FIG. In FIG. 2, the wafer substrate 12 is also illustrated.

As shown in FIGS. 1 and 2, the bonding layer 13 includes a bonding material 13a and a gap portion 13b.
The bonding material 13a continuously extends in a band shape and a spiral shape between the wafer substrate 12 and the support substrate 11 that supports the wafer substrate 12, so that the bonding material 13a is positioned over the entire bonding surface. The bonding material 13a is, for example, a resin.

  In addition, when located over the whole joining surface, for example, in the joining surface, the peripheral region where the distance to the center is closer than the distance to the peripheral edge, and the peripheral edge where the distance to the peripheral edge is closer than the distance to the center It shall also be said that it is located in two areas, the area.

  Similar to the bonding material 13a, the gap portion 13b continuously extends in a band shape and a spiral shape so that it is surrounded by both the support substrate 11 and the wafer substrate 12 (at least one example) and the bonding material 13a. A space is formed and continuously extends from the peripheral side (for example, the peripheral region) of the bonding material 13a to the central side (for example, the central region). In the present embodiment, the area ratio of the bonding material 13a and the gap portion 13b on the bonding surface is substantially the same or the gap portion 13b is narrower, but the gap portion 13b can be wider.

  The gap portion 13b is, for example, a groove having the same depth as the thickness of the bonding material 13a, but may be a groove shallower than the thickness of the bonding material 13a formed on the bonding material 13a. In that case, the gap portion 13b is formed on the bonding material 13a, and the gap portion 13b is surrounded by the wafer substrate 12 and the bonding material 13a.

  In addition, the gap portion 13b does not extend in a band shape, for example, island-shaped portions may communicate with each other, or may be a hole of a porous portion 43a as in the fourth embodiment described later. Alternatively, other shapes may be used. Moreover, although the space | gap part 13b makes a single closed space, as long as it has one closed space which continues from a peripheral side to a center side, you may have a several closed space.

The manufacturing method (support method) and the manufacturing apparatus (support apparatus) of the wafer substrate 12 will be described later, and first, an outline of the reduced pressure bonding will be described.
3A to 3C are cross-sectional views for explaining the outline of the decompression bonding in the first embodiment.

  First, before processing the wafer substrate 12 such as thinning, the bonding material 13a and the gap portion 13b described above are formed on the support substrate 11 as the bonding layer 13 using a resin material (or temporary adhesive).

  The bonding material 13a may be formed on the wafer substrate 12. However, by forming on the support substrate 11 side, a large amount of the bonding material 13a can be formed, so that productivity is improved. The bonding layer 13 can be used in a roll-to-roll process by forming it on a film in advance. The support substrate 11 is not limited to the same shape as the wafer substrate 12, and may be a square shape such as a panel display.

  As shown in FIG. 3A, when the support substrate 11 and the wafer substrate 12 are bonded, the bonding layer 13 formed on the support substrate 11 under reduced pressure is a circuit surface 12a of the wafer substrate 12 (shown only in FIGS. 3A to 3C). The support substrate 11 is placed on the wafer substrate 12 so as to be in contact with the top.

  By directly exposing the support substrate 11 and the wafer substrate 12 to the atmosphere, as shown in FIG. 3B, the gap portion 13b is maintained in a reduced pressure state, and the wafer substrate 12 is bonded to the support substrate 11 at, for example, atmospheric pressure.

  Since the gap portion 13b forms a single closed space as described above and extends from the peripheral side to the center side of the bonding material 13a, the vacuum (decompression) of the closed space is broken at one place on the peripheral side during peeling. Thus, the wafer substrate 12 can be easily peeled from the support substrate 11 by, for example, releasing it to the atmosphere.

  At the time of peeling, as shown in FIG. 3C, the hole is formed in the bonding material 13a by the tube 14, the closed space is released to the atmosphere, for example, and the reduced pressure state of the gap portion 13b is released, thereby peeling. In this case, peeling can be more reliably performed by blowing the gas to make the closed space a positive pressure.

  The tube 14 is, for example, a metal fine tube, but other materials may be used. For the peeling, it is only necessary to open the closed space of the gap portion 13b, and other methods such as wet etching using a solvent to dissolve the resin may be used, or holes may be formed by using a needle or the like instead. Good.

Hereinafter, the manufacturing method (support method) and the manufacturing apparatus 100 (support apparatus) of the wafer substrate 12 according to the first embodiment will be described.
FIG. 4 is a schematic configuration diagram illustrating the wafer substrate manufacturing apparatus 100 according to the first embodiment.
5A to 5E are cross-sectional views for explaining the method for manufacturing the wafer substrate 12 according to the first embodiment.

  As shown in FIG. 4, the wafer substrate manufacturing apparatus 100 includes two stages 101 and 102 arranged to face each other, cylinders 103 and 104 that move the stages 101 and 102, a decompression chamber 105, and the like. , A vacuum pump 106, a pipe 107, and a valve 108.

  First, as shown in FIG. 5A, the bonding material 13 a is coated on the support substrate 11. The support substrate 11 is, for example, a 300 mm Si wafer. However, the material of the support substrate 11 may be other materials such as glass, SUS (stainless steel), and resin, and the size of the support substrate 11 may be other sizes. The support substrate 11 desirably has good TTV (Total Thickness Variation), which is flatness.

  The bonding material 13a is, for example, a silicone resin having a film thickness of 50 μm. However, the material and size of the bonding material 13a may be other materials and other thicknesses depending on the operating temperature conditions. For example, examples of other materials include resins such as epoxy, phenolic, imide, and PET.

  Next, as shown in FIG. 5B, a gap portion 13b is formed in the bonding material 13a by a photomask. The gap portion 13b has a depth of 50 μm and a width of 50 μm, for example. The space | interval between the adjacent parts which mutually connect the space | gap part 13b is 100 micrometers, for example. The shape of the cross section orthogonal to the direction extending in the band shape of the gap portion 13b may be a rectangle as shown in FIG. 5B or another shape such as a round shape or a V shape. Further, as a method for forming the bonding layer 13, for example, a pattern of the bonding material 13a may be formed in advance on a sheet and transferred to the wafer substrate 12 without using photolithography.

  Next, in the decompression space in the decompression chamber 105 shown in FIG. 4, the wafer substrate 12 and the support substrate 11 are arranged so as to face each other as shown in FIG. 5C. The degree of vacuum in the decompression space is, for example, less than 1 Pa, but may be a negative pressure that is higher than the standard atmospheric pressure. Further, when the gap 13b is in a vacuum state (for example, a vacuum of 100 Pa or less, a medium vacuum, a high vacuum, or an ultra-high vacuum), the bonding can be reliably performed.

  In the decompression chamber 105, a decompression space is formed by a vacuum pump 106 connected via a pipe 107. The pipe 107 is provided with a valve 108. Instead of using the decompression chamber 105, the gap portion 13b may be in a reduced pressure state by sucking the closed space of the gap portion 13b.

  When the support substrate 11 and the wafer substrate 12 are bonded together, the support substrate 11 and the wafer substrate 12 may be pressed by bringing the stages 101 and 102 close to each other by the cylinders 103 and 104.

  Next, as shown in FIG. 5D, the wafer substrate 12 is back-ground while being bonded to the support substrate 11. For example, the pre-grinding of # 2000 is performed, and the remaining thickness of the wafer substrate 12-1 after back lighting is preferably 50 μm. The TTV after back grinding was measured and found to be very good, <1.5 μm. The transfer trace of the wafer substrate 12 due to the gap portion 13b was not seen even after back grinding.

  Next, as shown in FIG. 5E, the wafer substrate 12-1 bonded to the support substrate 11 is attached to the film 15 a of the dicing frame 15. Then, the support substrate 11 and the wafer substrate 12 are peeled off. The film 15a is supported by the frame 15b.

  At the time of peeling, as described above, peeling is performed by opening a hole in the bonding material 13a by the tube 14, releasing the closed space to the atmosphere, for example, and releasing the reduced pressure state of the gap portion 13b. In this case, the gas can be blown into the space so that the closed space is set to a positive pressure so that the separation can be performed more reliably.

  Thereafter, the wafer substrate 12 bonded to the dicing frame 15 is subjected to processes such as an organic cleaning process and a dicing process.

  In the first embodiment described above, the bonding material 13a positioned between the support substrate 11 and the wafer substrate 12 is surrounded by the bonding material 13a to form a closed space from the peripheral side to the center side of the bonding material 13a. A bonding layer including a continuous gap portion 13b is formed. Further, the closed space of the gap portion 13b is opened, and the wafer substrate 12 and the support substrate 11 are peeled off.

  Therefore, at the time of peeling, even if the closed space of the gap portion 13b is opened only on the peripheral side of the bonding material 13a, the entire closed space of the gap portion 13b continuous from the peripheral side of the bonding surface to the center side can be opened. it can. As a result, the support substrate 11 can be easily peeled off, and a decrease in yield due to damage to the wafer substrate 12 during peeling can be suppressed.

Therefore, according to the present embodiment, the support substrate 11 can be easily peeled, and the yield can be improved.
In the present embodiment, in the step of bonding the wafer substrate 12 and the support substrate 11, the wafer substrate 12 and the support substrate 11 are bonded so that the gap portion 13 b is in a reduced pressure state. In the step of peeling the wafer substrate 12 and the support substrate 11, the closed space of the gap portion 13 b is opened to release the reduced pressure state of the gap portion 13 b, and the wafer substrate 12 and the support substrate 11 are peeled off. .

  Thereby, since it can join without using an adhesive agent by the space | gap part 13b of a pressure reduction state, the contamination of the wafer board | substrate 11 can also be suppressed. Furthermore, the support substrate 11 can be peeled by a simple operation of opening the closed space of the gap portion 13b and releasing the reduced pressure state. Therefore, peeling of the support substrate 11 can be further facilitated.

  In the present embodiment, in the step of bonding the wafer substrate 12 and the support substrate 11, the wafer substrate 12 and the support substrate 11 are bonded in the reduced pressure space of the reduced pressure chamber 105. Therefore, the bonding between the wafer substrate 12 and the support substrate 11 can be facilitated.

  In the present embodiment, in the step of bonding the wafer substrate 12 and the support substrate 11, when the wafer substrate 12 and the support substrate 11 are bonded so that the gap portion is in a vacuum state, bonding is more reliably performed. It can be carried out.

  In the present embodiment, in the step of separating the wafer substrate 12 and the support substrate 11, a hole is provided in the bonding material 13a to open the closed space to the atmosphere. Therefore, the closed space can be easily opened to the atmosphere. Further, it is possible to suppress the deterioration of workability and the adhesion of the solvent due to the use of the solvent, to further facilitate the peeling of the support substrate 11, and to further improve the yield. Can do.

  Further, in this embodiment, in the step of peeling the wafer substrate 12 and the support substrate 11, if the closed space is made positive pressure by providing a hole in the bonding material 13 a and blowing a gas into the closed space, the peeling is further reduced. Can be easily.

Moreover, in this embodiment, the space | gap part 13b is extended in strip | belt shape. Therefore, joining and peeling can be performed by dispersing on the joining surface.
In the present embodiment, the gap portion 13b extends in a spiral shape. Therefore, joining and peeling can be performed by dispersing on the joining surface.

Second Embodiment
The present embodiment is the same as the first embodiment described above except that the gap portion 23b in the bonding layer 23 has a different shape from the gap portion 13b of the first embodiment. Therefore, detailed description is omitted.

FIG. 6 is a plan view showing the bonding layer 23 in the second embodiment.
7 is a sectional view taken along line VII-VII in FIG. In FIG. 7, the wafer substrate 22 is also illustrated.

As shown in FIGS. 6 and 7, the bonding layer 23 includes a bonding material 23a and a gap portion 23b.
The bonding material 23a is a communication groove that allows communication between a plurality of strip-shaped concentric circular portions 23a-1 centering on the center of the bonding surface and extending over the peripheral region and the central region, and concentric circular portions 23b-1 of the void portion 23b described later. 23a-2.

  In FIG. 7, the communication groove 23a-2 is provided thinner than the concentric circular portion 23a-1, and is provided in the concentric circular portion 23a-1 in a cross shape. As long as it communicates, the concentric circle part 23a-1 may be divided by the same thickness as the concentric circle part 23a-1, and the shape and position are not limited.

  The gap portion 23b is surrounded by the bonding material 23a to form a closed space, and includes a plurality of strip-shaped concentric circular portions 23b-1 communicating with each other by the communication groove 23a-2, so that the gap portion 23b is centered from the peripheral side of the bonding material 23a. Extends continuously to the side. Note that the gap portion 23b may include a concentric polygonal portion instead of the concentric circle portion 23b-1.

  In the present embodiment, the communication groove 23a-2 opens to the wafer substrate 22 side, and thus functions as a gap portion. The area ratio of the bonding material 23a (portion excluding the communication groove 23a-2) and the gap portion 23b (and 23a-2) is almost the same, or the gap portion 23b (and 23a-2) is the same. Although narrow, the gap portion 23b (and 23a-2) can be made wider.

  In the second embodiment described above, a bonding material 23a positioned between the support substrate 21 and the wafer substrate 22 is surrounded by the bonding material 23a to form a closed space from the peripheral side to the center side of the bonding material 23a. A common feature of the first embodiment is that a bonding layer 23 including a continuously extending gap portion 23b is formed. Therefore, also in this embodiment, the same effects as those in the first embodiment are obtained, that is, the support substrate 21 can be easily peeled and the yield can be improved. be able to.

  In the present embodiment, the gap portion 23b includes a plurality of concentric circular portions 23b-1 or concentric polygonal portions that communicate with each other. Therefore, joining and peeling can be performed by dispersing on the joining surface.

<Third Embodiment>
This embodiment can be the same as the first embodiment or the second embodiment described above, except that the bonding material 33a includes the adhesive material 33a-2. Therefore, detailed description is omitted.

8A to 8C are cross-sectional views for explaining the outline of the decompression bonding in the third embodiment.
About the bonding | jointing material 33a, the thing like 1st Embodiment or 2nd Embodiment may be sufficient, or another shape may be sufficient. As long as the gap portion 33b is surrounded by the bonding material 33a or the like to form a closed space and is continuous from the peripheral side to the center side of the bonding material 33a, such as the first embodiment or the second embodiment, Alternatively, other shapes may be used.

  The bonding material 33a includes a base material 33a-1 located on the support substrate 31 side and an adhesive material 33a-2 located on the wafer substrate 32 side. The adhesive 33a-2 is bonded to the wafer substrate 32 which is an example of at least one of the support substrate 31 and the wafer substrate 32. The adhesive 33a-2 is, for example, an organic resin bond material. The base material 33a-1 may be omitted, and only the adhesive 33a-2 may be used as the bonding material 33a.

  First, when processing the wafer substrate 32 such as thinning, a bonding material 33 a and a gap portion 33 b are formed on the support substrate 31 as a bonding layer 33 using a resin material. As for the bonding material 33a, first, the base material 33a-1 is formed in the same manner as the bonding material 13a of the first embodiment described above, and the adhesive material 33a-2 is formed between the base material 33a-1 and the wafer substrate 32. Good.

  As shown in FIG. 8A, when the support substrate 31 and the wafer substrate 32 are bonded, the support substrate 31 is arranged so that the bonding layer 33 formed on the support substrate 31 contacts the circuit surface 32a of the wafer substrate 32 under reduced pressure. Is placed on the wafer substrate 32.

By directly exposing the support substrate 31 and the wafer substrate 32 to the atmosphere, as shown in FIG. 8B, the gap portion 33b is maintained in a vacuum (decompression), and the wafer substrate 32 is bonded to the support substrate 31 at atmospheric pressure. .
In addition, since the bonding material 33a includes the bonding material 33a-2, bonding can be performed even under atmospheric pressure.

  At the time of peeling, as shown in FIG. 8C, the hole is formed in the bonding material 33a by the tube 34, the closed space is opened to the atmosphere, for example, and the reduced pressure state of the gap portion 33b is released, thereby peeling. In this case, the gas can be blown into the space so that the closed space is set to a positive pressure so that the separation can be performed more reliably. In addition, when joining is performed without setting the gap portion 33b in a reduced pressure state, the closed space is preferably set to a positive pressure enough to peel off the adhesive 33a-2.

  In the third embodiment described above, a bonding material 33a located between the support substrate 31 and the wafer substrate 32, and a closed space surrounded by the bonding material 33a and the like are formed continuously from the peripheral side to the center side of the bonding surface. And the first embodiment or the second embodiment such that the bonding layer 33 including the gap portion 33b is formed. Therefore, also in this embodiment, the same effects as those in the first embodiment or the second embodiment, that is, the support substrate 31 can be easily peeled off and the yield can be improved. Such effects can be obtained.

  In the present embodiment, the bonding material 33a includes an adhesive material 33a-2. Therefore, joining can be performed more reliably. Further, even when the gap portion 33b is not in a reduced pressure state, the support substrate 31 and the wafer substrate 32 can be bonded.

<Fourth embodiment>
In the present embodiment, the bonding layer 43 is formed by forming the porous portion 43a and the non-porous portion 43b positioned around the porous portion 43a, and the void portion is the porous portion 43a. Except for the point being a hole, it can be the same as that of the above-mentioned 1st Embodiment-3rd Embodiment. Therefore, detailed description is omitted.

9A to 9E are cross-sectional views for explaining the method for manufacturing the wafer substrate 42 according to the fourth embodiment.
First, as shown in FIG. 9A, a bond material (not shown) is coated on the support substrate 11, and a porous portion 43a using a porous film as an example is coated thereon. The porous film may be an organic material or an inorganic material.

  Next, as shown in FIG. 9B, the porous portion 43 b is formed by spray-applying, for example, resin on the outer peripheral portion of the porous portion 43 a and drying at 90 ° C. In this embodiment, the hole of the porous part 43a functions as a void part, and the part other than the hole of the porous part 43a and the non-porous part 43b function as a bonding material.

  The porous part 43b is, for example, a silicone resin having a coating width of 1 to 3 mm. However, the material and width of the porous portion 43b may be other materials or other widths depending on the operating temperature conditions. For example, examples of other materials include resins such as epoxy, phenolic, imide, and PET.

  Next, in the decompression space in the decompression chamber 105 shown in FIG. 4, the wafer substrate 42 is bonded as shown in FIG. 9C. Note that the degree of vacuum in the decompression space is, for example, less than 1 Pa.

  Next, as shown in FIG. 9D, the wafer substrate 42 is back-ground while being bonded to the support substrate 41. As in the first embodiment, for example, # 2000 pre-grinding is performed, and the remaining thickness of the wafer substrate 42-1 after back lighting is preferably set to 50 μm. The TTV after back grinding was measured and found to be very good, <1.5 μm. Further, the transfer trace of the wafer substrate 42 caused by the void portion taking the hole of the porous portion 43a as an example was not seen even after the back grinding.

  Next, as shown in FIG. 9E, the wafer substrate 42-1 bonded to the support substrate 41 is attached to the film 45a supported by the frame 45b of the dicing frame 45. Then, the support substrate 41 and the wafer substrate 42 are peeled off.

  At the time of peeling, as described above in the first embodiment, a hole is formed in the bonding material 43a by the tube 44, the closed space is released to the atmosphere, for example, and the reduced pressure state of the gap portion 43b is released, so that the peeling is performed. Is called. In this case, the gas can be blown into the space so that the closed space is set to a positive pressure so that the separation can be performed more reliably.

  Thereafter, the wafer substrate 42 bonded to the dicing frame 45 is subjected to processes such as an organic cleaning process and a dicing process.

  The fourth embodiment described above is surrounded by a bonding material (a portion other than the holes of the non-porous portion 43b and the porous portion 43a) located between the support substrate 41 and the wafer substrate 42, and the bonding material. A first embodiment to a third embodiment in which a bonding layer 43 that includes a void portion (hole of the porous portion 43a) that forms a closed space and continuously extends from the peripheral side to the center side of the bonding surface is formed. Have in common. Therefore, also in this embodiment, the same effects as those in the first to third embodiments, that is, the support substrate 41 can be easily peeled off and the yield can be improved. Such effects can be obtained.

  In the present embodiment, in the step of forming the bonding layer 43, the bonding layer 43 is formed by forming the porous portion 43a and the non-porous portion 43b located around the porous portion 43a. A space | gap part is a hole of the porous part 43a. Therefore, joining and peeling can be performed by dispersing on the joining surface.

Regarding the embodiment described above, the following additional notes are further disclosed.
(Appendix 1)
A bonding material positioned between a wafer substrate and a support substrate that supports the wafer substrate; and at least one of the wafer substrate and the support substrate and the bonding material to form a closed space; Forming a bonding layer including a gap portion continuous from the peripheral side to the center side,
Bonding the wafer substrate and the support substrate,
Opening the closed space of the gap portion, and peeling the wafer substrate and the support substrate,
A method of manufacturing a wafer substrate.
(Appendix 2)
In the method for manufacturing a wafer substrate according to attachment 1,
In the step of bonding the wafer substrate and the support substrate, the wafer substrate and the support substrate are bonded so that the gap portion is in a reduced pressure state,
In the step of peeling the wafer substrate and the support substrate, the closed space of the gap portion is released to release the reduced pressure state of the gap portion, and the wafer substrate and the support substrate are peeled off,
A method of manufacturing a wafer substrate.
(Appendix 3)
In the method for manufacturing a wafer substrate according to attachment 2,
In the step of bonding the wafer substrate and the support substrate, the wafer substrate and the support substrate are bonded in a reduced pressure space.
A method of manufacturing a wafer substrate.
(Appendix 4)
In the method for manufacturing a wafer substrate according to appendix 2 or appendix 3,
In the step of bonding the wafer substrate and the support substrate, the wafer substrate and the support substrate are bonded so that the gap portion is in a vacuum state.
A method of manufacturing a wafer substrate.
(Appendix 5)
In the method for manufacturing a wafer substrate according to any one of appendix 2 to appendix 4,
In the step of separating the wafer substrate and the support substrate, a hole is provided in the bonding material to open the closed space to the atmosphere.
A method of manufacturing a wafer substrate.
(Appendix 6)
In the method for manufacturing a wafer substrate according to any one of appendix 1 to appendix 5,
In the step of separating the wafer substrate and the support substrate, a hole is provided in the bonding material, and a gas is blown into the closed space to make the closed space positive pressure.
A method of manufacturing a wafer substrate.
(Appendix 7)
In the method for manufacturing a wafer substrate according to any one of appendix 1 to appendix 6,
The gap portion extends in a band shape,
A method of manufacturing a wafer substrate.
(Appendix 8)
In the method for manufacturing a wafer substrate according to appendix 7,
The gap portion extends in a spiral shape,
A method of manufacturing a wafer substrate.
(Appendix 9)
In the method for manufacturing a wafer substrate according to appendix 7,
The gap portion includes a plurality of concentric circular portions or concentric polygonal portions that communicate with each other.
A method of manufacturing a wafer substrate.
(Appendix 10)
In the method for manufacturing a wafer substrate according to any one of appendix 1 to appendix 6,
In the step of forming the bonding layer, the bonding layer is formed by forming a porous portion and a non-porous portion located around the porous portion,
The void portion is a hole of the porous portion,
A method of manufacturing a wafer substrate.
(Appendix 11)
In the method for manufacturing a wafer substrate according to any one of appendix 1 to appendix 10,
The bonding material includes an adhesive.
A method of manufacturing a wafer substrate.

11 Support substrate 12 Wafer substrate 12a Circuit surface 13 Bonding layer 13a Bonding material 13b Air gap portion 14 Tube 15 Dicing frame 15a Film 15b Frame 21 Support substrate 22 Wafer substrate 23 Bonding layer 23a Bonding material 23a-1 Concentric circular portion 23a-2 Communication groove 23b Cavity portion 23b-1 Concentric circle portion 31 Support substrate 32 Wafer substrate 32a Circuit surface 33 Bonding layer 33a Bonding material 33a-1 Base material 33a-2 Adhesive material 33b Void portion 34 Tube 41 Support substrate 42 Wafer substrate 43 Bonding layer 43a Porous portion 43b Non-porous part 45 Dicing frame 45a Film 45b Frame 100 Wafer substrate manufacturing apparatus 101 Stage 102 Stage 103 Cylinder 104 Cylinder 105 Depressurization chamber 106 Vacuum pump 107 Piping 1 8 valve

Claims (5)

A bonding material positioned between a wafer substrate and a support substrate that supports the wafer substrate, a gap portion surrounded by at least one of the wafer substrate and the support substrate and the bonding material to form a closed space; Forming a bonding layer containing
Bonding the wafer substrate and the support substrate so that the void portion is in a reduced pressure state,
Releasing the reduced pressure state of the gap portion by providing a hole in the bonding material and releasing the closed space to the atmosphere , and peeling the wafer substrate and the support substrate ;
A method of manufacturing a wafer substrate. A bonding material positioned between a wafer substrate and a support substrate that supports the wafer substrate, a gap portion surrounded by at least one of the wafer substrate and the support substrate and the bonding material to form a closed space; Forming a bonding layer containing
Bonding the wafer substrate and the support substrate,
While opening the closed space of the gap portion by the Rukoto provided a hole in the bonding material, the closed space between the wafer substrate and the positive pressure of the closed space by blowing a gas to said support substrate Exfoliate ,
A method of manufacturing a wafer substrate. In the manufacturing method of the wafer substrate according to claim 1 or 2 ,
The gap portion is surrounded by at least one of the wafer substrate and the support substrate and the bonding material to form a band-shaped closed space .
A method of manufacturing a wafer substrate. In the manufacturing method of the wafer substrate according to claim 3 ,
The gap portion is surrounded by at least one of the wafer substrate and the support substrate and the bonding material to form a spiral closed space .
A method of manufacturing a wafer substrate. In the manufacturing method of the wafer substrate according to claim 1 or 2 ,
In the step of forming the bonding layer, the bonding layer is formed by forming a porous portion and a non-porous portion located around the porous portion,
The void portion is a hole of the porous portion,
A method of manufacturing a wafer substrate.