JP5951196B2 - Ammonia treatment system - Google Patents
Ammonia treatment system Download PDFInfo
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- JP5951196B2 JP5951196B2 JP2011144685A JP2011144685A JP5951196B2 JP 5951196 B2 JP5951196 B2 JP 5951196B2 JP 2011144685 A JP2011144685 A JP 2011144685A JP 2011144685 A JP2011144685 A JP 2011144685A JP 5951196 B2 JP5951196 B2 JP 5951196B2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 title claims description 361
- 229910021529 ammonia Inorganic materials 0.000 title claims description 179
- 239000003054 catalyst Substances 0.000 claims description 301
- 238000012545 processing Methods 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 29
- 239000011148 porous material Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000000630 rising effect Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 119
- 239000010410 layer Substances 0.000 description 81
- 238000000354 decomposition reaction Methods 0.000 description 36
- 238000012790 confirmation Methods 0.000 description 15
- 238000012360 testing method Methods 0.000 description 15
- 239000006227 byproduct Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 238000001816 cooling Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Catalysts (AREA)
Description
本発明は、アンモニア処理システムに関する。 The present invention also relates to the ammonia treatment system.
例えば、火力発電所や下水処理場等から発生するアンモニアを触媒を用いて分解するアンモニア処理システムが知られている。このアンモニア処理システムは、処理ガスに含まれるアンモニアを触媒に接触させる触媒塔を備えている。この触媒塔では、例えば４ＮＨ３＋３Ｏ２→２Ｎ２＋６Ｈ２Ｏに示す分解反応が生じ、アンモニアが分解される（例えば特許文献１を参照）。 For example, an ammonia treatment system that decomposes ammonia generated from a thermal power plant or a sewage treatment plant using a catalyst is known. This ammonia treatment system includes a catalyst tower for bringing ammonia contained in the treatment gas into contact with the catalyst. In this catalyst tower, for example, a decomposition reaction represented by 4NH 3 + 3O 2 → 2N 2 + 6H 2 O occurs, and ammonia is decomposed (see, for example, Patent Document 1).
ところで、前述したアンモニア処理システムでは、触媒塔に供給する処理ガスのアンモニア濃度を高めて、アンモニアの分解効率を高めることが望まれている。しかしながら、アンモニアの分解反応は発熱反応であるため、処理ガスのアンモニア濃度が高いほど、分解反応で生じる発熱量も多くなり、触媒塔の温度が上昇しやすい。触媒塔の温度が上昇すると、環境汚染の原因となるＮＯｘやＮ２Ｏ等の副生成物の生成率が増大する傾向にある。このため、前述したアンモニア処理システムでは、副生成物の発生を抑制しつつ、例えば処理ガスのアンモニア濃度が２％を超えるような高濃度のアンモニアを分解することは困難であった。 By the way, in the above-mentioned ammonia treatment system, it is desired to increase the ammonia concentration of the treatment gas supplied to the catalyst tower to increase the decomposition efficiency of ammonia. However, since the ammonia decomposition reaction is an exothermic reaction, the higher the ammonia concentration of the processing gas, the greater the amount of heat generated by the decomposition reaction, and the temperature of the catalyst tower tends to rise. When the temperature of the catalyst tower rises, the production rate of by-products such as NOx and N 2 O that cause environmental pollution tends to increase. For this reason, in the above-mentioned ammonia treatment system, it is difficult to decompose high concentration ammonia such that the ammonia concentration of the treatment gas exceeds 2% while suppressing the generation of by-products.
本発明はかかる課題に鑑みてなされたものであり、その目的とするところは、副生成物の発生を抑制しつつ、高濃度のアンモニアを分解できるアンモニア処理システムを提供することにある。 The present invention has been made in view of these problems, it is an object, while suppressing the generation of by-products is to provide a ammoniated system capable of degrading high concentrations of ammonia.
前記課題を解決するための発明は、処理ガスに含まれるアンモニアの一部を分解する第１触媒塔と、前記第１触媒塔の温度が３８０度以下に維持されるとともに前記処理ガスに含まれるアンモニアの一部が分解されるように、前記第１触媒塔に供給される前記処理ガスを約２６０度の温度に加熱する加熱装置と、冷却された前記処理ガスに含まれる残りの前記アンモニアを分解する第２触媒塔と、前記第２触媒塔の温度が３８０度以下に維持されるとともに前記処理ガスに含まれる残りのアンモニアが分解されるように、前記第１触媒塔から排出された前記処理ガスを約２６０度の温度に冷却する冷却器と、前記第２触媒塔から排出された前記処理ガスと、前記第１触媒塔に供給される前の前記処理ガスとを熱交換する熱交換器と、を備え、前記第１触媒塔及び前記第２触媒塔における触媒は、夫々、触媒成分を担持する多孔質物質がコーティングされた基材からなり、前記基材は、シート状のベース部と、前記ベース部の一方の表面から立ち上がる複数の突出片と、前記ベース部を貫通する複数の貫通孔と、を有し、前記ベース部の隙間に前記突出片が介在するように重なり合うことを特徴とするアンモニア処理システムである。
The invention for solving the above problems includes a first catalyst tower for decomposing a part of ammonia contained in the process gas, and the temperature of the first catalyst tower is maintained at 380 ° C. or less and is contained in the process gas. A heating device for heating the process gas supplied to the first catalyst tower to a temperature of about 260 degrees so that a part of the ammonia is decomposed, and the remaining ammonia contained in the cooled process gas The second catalyst tower to be decomposed, and the temperature of the second catalyst tower is maintained at 380 ° C. or less, and the remaining ammonia contained in the processing gas is decomposed so that the ammonia discharged from the first catalyst tower is decomposed. Heat exchange for exchanging heat between the cooler for cooling the process gas to a temperature of about 260 degrees, the process gas discharged from the second catalyst tower, and the process gas before being supplied to the first catalyst tower And equipped with The catalysts in the first catalyst tower and the second catalyst tower are each composed of a base material coated with a porous material carrying a catalyst component, and the base material includes a sheet-like base portion and a base portion of the base portion. An ammonia treatment system comprising a plurality of projecting pieces rising from one surface and a plurality of through holes penetrating the base portion, wherein the projecting pieces are interposed in a gap between the base portions. It is.
本発明によれば、副生成物の発生を抑制しつつ、高濃度のアンモニアを分解できるアンモニア処理システムを提供することができる。 According to the present invention, while suppressing the generation of by-products, can provide ammonia treatment system capable of degrading high concentrations of ammonia.
===アンモニア処理システムの全体構成===
図１、図２、図３を参照しつつ、本実施形態にかかるアンモニア処理システム１の全体構成について説明する。尚、図１は、アンモニア処理システム１の構成を説明するための模式図である。図２は、アンモニア処理システム１の外径を示す平面図である。図３は、トラック９に車載したアンモニア処理システム１の外形を示す正面図である。
=== Overall configuration of ammonia treatment system ===
The overall configuration of the ammonia processing system 1 according to the present embodiment will be described with reference to FIGS. 1, 2, and 3. FIG. 1 is a schematic diagram for explaining the configuration of the ammonia treatment system 1. FIG. 2 is a plan view showing the outer diameter of the ammonia treatment system 1. FIG. 3 is a front view showing the outer shape of the ammonia treatment system 1 mounted on the truck 9.
図２及び図３に示すように、アンモニア処理システム１は、例えば組み立てられた状態でトラック９に車載され、火力発電所等のアンモニア取扱設備を定期点検する際に、当該アンモニア取扱設備の付近まで持ち運ばれる。そして、アンモニア取扱設備においてアンモニアを貯蔵するアンモニアタンク７内に残留するアンモニアガスを分解処理する。具体的には、アンモニアタンク７内の残留アンモニアガスは、流量調整装置６によってアンモニアの濃度が例えば２％となるように空気と混合された後、ブロワ８によってアンモニア処理システム１に処理ガスとして供給される。このアンモニア処理システム１は、加熱装置２と、第１触媒塔３と、冷却器４と、第２触媒塔５とを備えている。 As shown in FIGS. 2 and 3, the ammonia treatment system 1 is mounted on a truck 9 in an assembled state, for example, and when the ammonia handling equipment such as a thermal power plant is regularly inspected, the ammonia handling system 1 is in the vicinity of the ammonia handling equipment. Carried around. And the ammonia gas which remains in the ammonia tank 7 which stores ammonia in an ammonia handling facility is decomposed | disassembled. Specifically, the residual ammonia gas in the ammonia tank 7 is mixed with air so that the ammonia concentration becomes, for example, 2% by the flow rate adjusting device 6, and then supplied to the ammonia treatment system 1 by the blower 8 as a treatment gas. Is done. The ammonia treatment system 1 includes a heating device 2, a first catalyst tower 3, a cooler 4, and a second catalyst tower 5.
加熱装置２は、熱交換器２０と、ヒータ２１とを備えている。熱交換器２０は、第２触媒塔５から排出された処理ガスと、第１触媒塔３に供給される前の処理ガスとを熱交換させる。これによって、熱交換器２０は、第２触媒塔５から排出された処理ガスを冷却するとともに、第１触媒塔３に供給される前の処理ガスを加熱する。 The heating device 2 includes a heat exchanger 20 and a heater 21. The heat exchanger 20 exchanges heat between the processing gas discharged from the second catalyst tower 5 and the processing gas before being supplied to the first catalyst tower 3. Thereby, the heat exchanger 20 cools the processing gas discharged from the second catalyst tower 5 and heats the processing gas before being supplied to the first catalyst tower 3.
ヒータ２１は、例えば、熱交換器２０から排出された処理ガスの温度を検知するセンサ（不図示）を備えている。ヒータ２１は、このセンサによって、熱交換器２０で処理ガスが加熱されたことを検出するまでの間、即ち、第２触媒塔５から処理ガスが排出され、熱交換器２０に供給されるまでの間、第１触媒塔３に供給される前の処理ガスを加熱する。 The heater 21 includes, for example, a sensor (not shown) that detects the temperature of the processing gas discharged from the heat exchanger 20. Until the heater 21 detects that the processing gas is heated by the heat exchanger 20 by this sensor, that is, until the processing gas is discharged from the second catalyst tower 5 and supplied to the heat exchanger 20. During this time, the processing gas before being supplied to the first catalyst tower 3 is heated.
第１触媒塔３は、第１触媒層３０を備え、処理ガスに含まれるアンモニアの一部を分解する。冷却器４は、熱交換器４０と、この熱交換器４０に空気を送風するブロワ４１とを備えている。熱交換器４０は、第１触媒塔３から排出された処理ガスと、ブロワ４１を介して供給される空気とを熱交換させる。これによって、熱交換器４０は、第１触媒塔３から排出された処理ガスを冷却する。 The first catalyst tower 3 includes a first catalyst layer 30 and decomposes a part of ammonia contained in the processing gas. The cooler 4 includes a heat exchanger 40 and a blower 41 that blows air to the heat exchanger 40. The heat exchanger 40 exchanges heat between the processing gas discharged from the first catalyst tower 3 and the air supplied via the blower 41. Thereby, the heat exchanger 40 cools the processing gas discharged from the first catalyst tower 3.
第２触媒塔５は、第２触媒層５０、第３触媒層５１、第４触媒層５２を備え、処理ガスに含まれる残りのアンモニアを分解する。尚、本実施形態では、第１触媒塔３の第１触媒層３０及び第２触媒塔５の第２触媒層５０乃至第４触媒層５２は、夫々同一の構成からなることとし、総称して触媒層とする。この触媒層の詳細については後述する。 The second catalyst tower 5 includes a second catalyst layer 50, a third catalyst layer 51, and a fourth catalyst layer 52, and decomposes the remaining ammonia contained in the processing gas. In the present embodiment, the first catalyst layer 30 of the first catalyst tower 3 and the second catalyst layer 50 to the fourth catalyst layer 52 of the second catalyst tower 5 have the same configuration, and are collectively named. The catalyst layer is used. Details of the catalyst layer will be described later.
本実施形態にかかるアンモニア処理システム１では、第１触媒塔３において、処理ガスに含まれるアンモニアの一部を分解する。このため、処理ガスに含まれる全アンモニアを分解する場合に比べて、アンモニアの分解反応による発熱量を低減でき、第１触媒塔３の最大温度の上昇を抑制できる。そして、第１触媒塔３から排出された処理ガスを冷却器４によって冷却してから第２触媒塔５に供給する。この処理ガスは、第１触媒塔３でアンモニアが分解されているため、アンモニア濃度が低減している。第２触媒塔５の最大温度は、第２触媒塔５の入口温度と、処理ガスのアンモニア濃度とに起因して定まる。従って、第２触媒塔５では、第１触媒塔３において処理ガスのアンモニア濃度が低減した分及び冷却器４で処理ガスが冷却された分、第２触媒塔５の最大温度の上昇を抑制できる。よって、アンモニア処理システム１では、副生成物の発生を抑制しつつ、高濃度のアンモニアを分解できる。 In the ammonia treatment system 1 according to the present embodiment, a part of ammonia contained in the treatment gas is decomposed in the first catalyst tower 3. For this reason, compared with the case where all the ammonia contained in process gas is decomposed | disassembled, the emitted-heat amount by the decomposition reaction of ammonia can be reduced, and the raise of the maximum temperature of the 1st catalyst tower 3 can be suppressed. Then, the processing gas discharged from the first catalyst tower 3 is cooled by the cooler 4 and then supplied to the second catalyst tower 5. In this processing gas, the ammonia concentration is reduced because ammonia is decomposed in the first catalyst tower 3. The maximum temperature of the second catalyst tower 5 is determined due to the inlet temperature of the second catalyst tower 5 and the ammonia concentration of the processing gas. Therefore, in the second catalyst tower 5, the increase in the maximum temperature of the second catalyst tower 5 can be suppressed by the amount that the ammonia concentration of the processing gas is reduced in the first catalyst tower 3 and the amount that the processing gas is cooled by the cooler 4. . Therefore, the ammonia treatment system 1 can decompose high-concentration ammonia while suppressing the generation of by-products.
===触媒層について===
<<<触媒層の構成について>>>
図４、図５、図６を参照しつつ、本実施形態にかかるアンモニア処理システム１の備える触媒層の構成について、第１触媒層３０を例に挙げて説明する。尚、本実施形態では、第１触媒層３０と、第２触媒層５０乃至第４触媒層５２とは、夫々同一の構成からなるため、第２触媒層５０乃至第４触媒層５２の構成についての説明は省略する。図４は、第１触媒層３０の基材３１の表面における多孔質物質３２及び触媒成分３３の構造を説明するための模式図である。図５は、第１触媒層３０における基材３１の表面の一部を示す斜視図である。図６は、第１触媒層３０における基材３１の全体構造を示す斜視図である。
=== About the catalyst layer ===
<<< Composition of catalyst layer >>>
With reference to FIGS. 4, 5, and 6, the configuration of the catalyst layer included in the ammonia treatment system 1 according to the present embodiment will be described using the first catalyst layer 30 as an example. In the present embodiment, since the first catalyst layer 30 and the second catalyst layer 50 to the fourth catalyst layer 52 have the same configuration, the configuration of the second catalyst layer 50 to the fourth catalyst layer 52 is described. Description of is omitted. FIG. 4 is a schematic diagram for explaining the structures of the porous substance 32 and the catalyst component 33 on the surface of the base 31 of the first catalyst layer 30. FIG. 5 is a perspective view showing a part of the surface of the base material 31 in the first catalyst layer 30. FIG. 6 is a perspective view showing the overall structure of the base material 31 in the first catalyst layer 30.
第１触媒層３０は、例えば、処理ガスに含まれるアンモニアガスと接触することで、アンモニア（ＮＨ３）を酸化して、窒素（Ｎ２）と水（Ｈ２Ｏ）とに分解する。図４に示すように、第１触媒層３０は、基材３１と、多孔質物質３２と、触媒成分３３とを備えている。 The first catalyst layer 30, for example, oxidizes ammonia (NH 3 ) by contacting with ammonia gas contained in the processing gas, and decomposes it into nitrogen (N 2 ) and water (H 2 O). As shown in FIG. 4, the first catalyst layer 30 includes a base material 31, a porous material 32, and a catalyst component 33.
多孔質物質３２は、触媒成分３３を担持する。本実施形態では、多孔質物質３２として酸化アルミナ（Ａｌ２Ｏ３）を用いている。触媒成分３３は、Ｐｔ−ＣｕＯ又はＰｔ−ＣｕＯ−Ｃｌからなる。触媒成分３３がＰｔ−ＣｕＯの場合、例えば白金コロイド溶液に多孔質物質３２を含浸することで、多孔質物質３２に触媒成分３３を担持させることができる。また、触媒成分３３がＰｔ−ＣｕＯ−Ｃｌの場合、例えば塩化白金酸（Ｈ２ＰｔＣｌ６）水溶液に多孔質物質３２を含浸することで、多孔質物質３２に触媒成分３３を担持させることができる。 The porous material 32 carries the catalyst component 33. In the present embodiment, alumina oxide (Al 2 O 3 ) is used as the porous material 32. The catalyst component 33 is made of Pt—CuO or Pt—CuO—Cl. When the catalyst component 33 is Pt—CuO, the catalyst component 33 can be supported on the porous material 32 by impregnating the porous material 32 in a platinum colloid solution, for example. When the catalyst component 33 is Pt—CuO—Cl, for example, the porous material 32 can be supported on the porous material 32 by impregnating the porous material 32 in a chloroplatinic acid (H 2 PtCl 6 ) aqueous solution. .
基材３１は、表面に多孔質物質３２がコーティングされ、本実施形態では、ステンレス鋼（ＳＵＳ）によって形成されている。ここで、図５及び図６を参照しつつ、基材３１の構造について具体的に説明する。基材３１は、シート状のベース部３４と、このベース部３４の一方の表面から立ち上がった複数の突出片３５とを備えている。 The base material 31 has a surface coated with a porous material 32, and is formed of stainless steel (SUS) in this embodiment. Here, the structure of the base material 31 will be specifically described with reference to FIGS. 5 and 6. The base material 31 includes a sheet-like base portion 34 and a plurality of protruding pieces 35 rising from one surface of the base portion 34.
ベース部３４は、短尺辺と長尺辺とを有する矩形帯状に形成されている。各突出片３５は、ベース部３４の表面から直交する角度で立ち上がっている。また、ベース部３４における各突出片３５の基端部分には突出片３５と同じ形状の貫通孔３６が形成されている。 The base portion 34 is formed in a rectangular band shape having a short side and a long side. Each protruding piece 35 rises at an angle orthogonal to the surface of the base portion 34. Further, a through hole 36 having the same shape as the protruding piece 35 is formed at the base end portion of each protruding piece 35 in the base portion 34.
基材３１は、突出片３５や貫通孔３６が形成されたベース部３４を、一方の短尺辺を中心として巻回された円柱形状を呈している。本実施形態では、ベース部３４は、突出片３５を備える表面が内側となるように巻回されている。これにより、各突出片３５は、円柱形状の中心軸から放射状に向いて設けられ、半径方向に重なり合うベース部３４の隙間（層間）に介在する。これによって、ベース部３４の隙間は突出片３５の高さ以上の間隔に維持され、通気性が確保される。 The base material 31 has a cylindrical shape in which a base portion 34 on which a protruding piece 35 and a through hole 36 are formed is wound around one short side. In this embodiment, the base part 34 is wound so that the surface provided with the protruding piece 35 is on the inside. Thus, each protruding piece 35 is provided radially from the central axis of the columnar shape, and is interposed in the gap (interlayer) of the base portion 34 that overlaps in the radial direction. As a result, the gap between the base portions 34 is maintained at an interval equal to or higher than the height of the protruding piece 35, and air permeability is ensured.
この第１触媒層３０では、処理ガスを基材３１の一方の端面側から他方の端面側に向かって流すことで、処理ガスに含まれるアンモニアが分解される。具体的には、基材３１の層間には、触媒成分３３を担持する多孔質物質３２がコーティングされた突出片３５が介在しているので、処理ガスが突出片３５と衝突する際にアンモニアの分解反応が生じる。 In the first catalyst layer 30, ammonia contained in the processing gas is decomposed by flowing the processing gas from one end surface side of the base material 31 toward the other end surface side. Specifically, since the projecting pieces 35 coated with the porous material 32 supporting the catalyst component 33 are interposed between the layers of the base material 31, when the process gas collides with the projecting pieces 35, ammonia is not produced. A decomposition reaction occurs.
この際、突出片３５は、処理ガスの入口側である基材３１の一方の端面側から、処理ガスの出口側である他方の端面側に亘って異なる位置に多数配置されている。これによって、処理ガスを流すための流路を基材３１の内部全体に形成でき、基材３１の内部における目詰まりを防止できる。また、突出片３５によって、処理ガスに対する適度な流路抵抗を与えること、処理ガスの流れ方向に変化を与えることができる。さらに、貫通孔３６によって、基材３１の内部において層間を跨いで三次元的に処理ガスを流すことができる。従って、第１触媒層３０では、基材３１の内部全体でアンモニアの分解反応を生じさせることができ、処理ガスに含まれるアンモニアを効率よく分解できる。第２触媒層５０乃至第４触媒層５２についても同様である。 At this time, a large number of protruding pieces 35 are arranged at different positions from one end surface side of the base material 31 which is the processing gas inlet side to the other end surface side which is the processing gas outlet side. Thereby, a flow path for flowing the processing gas can be formed in the entire inside of the base material 31, and clogging inside the base material 31 can be prevented. Further, the projecting piece 35 can provide an appropriate flow path resistance to the processing gas and can change the flow direction of the processing gas. Further, the processing gas can be flowed three-dimensionally across the layers in the base material 31 by the through holes 36. Therefore, in the 1st catalyst layer 30, the decomposition | disassembly reaction of ammonia can be produced in the whole inside of the base material 31, and ammonia contained in process gas can be decomposed | disassembled efficiently. The same applies to the second catalyst layer 50 to the fourth catalyst layer 52.
本実施形態にかかる第１触媒塔３では、第１触媒層３０が、基材３１の一方の端面側から他方の端面側に向かって処理ガスが流れるように配置されている。また、第２触媒塔５では、第２触媒層５０、第３触媒層５１、第４触媒層５２が順に、夫々の基材の一方の端面側から他方の端面側に向かって処理ガスが流れるように直列に配置されている。 In the first catalyst tower 3 according to the present embodiment, the first catalyst layer 30 is arranged such that the processing gas flows from one end face side of the base material 31 toward the other end face side. In the second catalyst tower 5, the process gas flows from the one end face side of each base material to the other end face side in order through the second catalyst layer 50, the third catalyst layer 51, and the fourth catalyst layer 52. Are arranged in series.
<<<触媒層のアンモニア分解特性について>>>
ここで、図７、図８を参照しつつ、本実施形態にかかる触媒層のアンモニア分解特性について説明する。尚、図７は、触媒塔Ａの最大温度とＮＯｘの発生率との関係を示すグラフである。図８（ａ）は、触媒塔Ａにおける入口温度と、触媒層ごとの温度及びアンモニアの分解率との関係を示すグラフであり、（ｂ）は、触媒塔Ａの模式図である。
<<< About ammonia decomposition characteristics of catalyst layer >>>
Here, the ammonia decomposition characteristics of the catalyst layer according to the present embodiment will be described with reference to FIGS. FIG. 7 is a graph showing the relationship between the maximum temperature of the catalyst tower A and the NOx generation rate. FIG. 8A is a graph showing the relationship between the inlet temperature in the catalyst tower A, the temperature of each catalyst layer, and the decomposition rate of ammonia, and FIG. 8B is a schematic diagram of the catalyst tower A. FIG.
先ず、触媒塔Ａのアンモニア分解特性について第１及び第２確認試験によって確認した。触媒塔Ａは、第１触媒層３０、第２触媒層５０、第３触媒層５１、第４触媒層５２を、夫々の基材の一方の端面側から他方の端面側に向かって処理ガスが流れるように直列に備えている。 First, the ammonia decomposition characteristics of the catalyst tower A were confirmed by first and second confirmation tests. In the catalyst tower A, the first catalyst layer 30, the second catalyst layer 50, the third catalyst layer 51, and the fourth catalyst layer 52 are supplied with a processing gas from one end surface side to the other end surface side of each base material. It is in series to flow.
第１確認試験では、触媒塔Ａにおいて、アンモニア濃度が１％の処理ガスに含まれるアンモニアを分解した場合に、アンモニアの分解反応に伴って上昇する触媒塔Ａの最大温度と、副生成物として発生したＮＯｘの発生率との関係を確認した。この第１確認試験では、触媒塔Ａへ供給する処理ガスの温度（入口温度）を変化させることで、触媒塔Ａの最大温度を約３４０度〜約３８５度に変化させた。そして、触媒塔Ａから排出された処理ガスに含まれるＮＯｘの濃度をガス検知管法によって分析し、各最大温度におけるＮＯｘの発生率を算出した。 In the first confirmation test, when the ammonia contained in the treatment gas having an ammonia concentration of 1% is decomposed in the catalyst tower A, the maximum temperature of the catalyst tower A that rises with the decomposition reaction of ammonia, and as a by-product The relationship with the generation rate of generated NOx was confirmed. In the first confirmation test, the maximum temperature of the catalyst tower A was changed from about 340 degrees to about 385 degrees by changing the temperature (inlet temperature) of the processing gas supplied to the catalyst tower A. Then, the concentration of NOx contained in the processing gas discharged from the catalyst tower A was analyzed by the gas detection tube method, and the NOx generation rate at each maximum temperature was calculated.
図７に示す第１確認試験の結果より、触媒塔Ａの最大温度が上昇するほど、ＮＯｘの発生率も上昇することが確認された。また、ＮＯｘの発生率は、触媒塔Ａの最大温度が３８０度以下では３〜５％であるが、３８０度を超えると８％に上昇することが確認された。つまり、触媒塔Ａの最大温度を３８０度以下とすることで、効率よくＮＯｘの発生を抑制できることが確認された。 From the result of the first confirmation test shown in FIG. 7, it was confirmed that the NOx generation rate increased as the maximum temperature of the catalyst tower A increased. Further, it was confirmed that the NOx generation rate was 3 to 5% when the maximum temperature of the catalyst tower A was 380 degrees or less, but increased to 8% when it exceeded 380 degrees. That is, it was confirmed that the generation of NOx can be efficiently suppressed by setting the maximum temperature of the catalyst tower A to 380 ° C. or less.
第２確認試験では、触媒塔Ａにおいて、アンモニア濃度が２％の処理ガスに含まれるアンモニアを分解した場合に、触媒塔Ａにおける入口温度と、第１触媒層３０乃至第４触媒層５２夫々の出口における処理ガスの温度（出口温度）及びアンモニアの分解率との関係を確認した。第２確認試験では、触媒塔Ａにおける入口温度を２５０度、２７５度、３００度に夫々変化させた。そして、この入口温度ごとに、各触媒層における出口温度を測定した。また、入口温度を２５０度とした測定では、第１触媒層３０及び第２触媒層５０から夫々排出された処理ガスのアンモニアの濃度をガス検知管法によって分析してアンモニアの分解率を算出した。同様に、入口温度を２７５度、３００度とした測定では、夫々第１触媒層３０から排出された処理ガスにおけるアンモニアの分解率を算出した。 In the second confirmation test, when ammonia contained in the treatment gas having an ammonia concentration of 2% is decomposed in the catalyst tower A, the inlet temperature in the catalyst tower A and each of the first catalyst layer 30 to the fourth catalyst layer 52 are changed. The relationship between the temperature of the treatment gas at the outlet (outlet temperature) and the decomposition rate of ammonia was confirmed. In the second confirmation test, the inlet temperature in the catalyst tower A was changed to 250 degrees, 275 degrees, and 300 degrees, respectively. And the exit temperature in each catalyst layer was measured for every entrance temperature. In the measurement with the inlet temperature set at 250 degrees, the ammonia decomposition rate was calculated by analyzing the ammonia concentration of the processing gas discharged from the first catalyst layer 30 and the second catalyst layer 50 by the gas detector tube method. . Similarly, in the measurement where the inlet temperature was 275 degrees and 300 degrees, the decomposition rate of ammonia in the processing gas discharged from the first catalyst layer 30 was calculated.
図８（ａ）に示す第２確認試験の結果より、触媒塔Ａの入口温度が高いほど、各触媒層の出口温度も高くなる傾向にあることが確認された。また、触媒塔Ａの入口温度が高いほど、触媒塔Ａの入口に近い触媒層（第１触媒層３０）において、速やかにアンモニアが分解されることが確認された。 From the results of the second confirmation test shown in FIG. 8A, it was confirmed that the higher the inlet temperature of the catalyst tower A, the higher the outlet temperature of each catalyst layer. Further, it was confirmed that the higher the inlet temperature of the catalyst tower A, the faster the ammonia is decomposed in the catalyst layer (first catalyst layer 30) closer to the inlet of the catalyst tower A.
触媒塔Ａの入口温度を２７５度及び３００度とした場合、処理ガスが第１触媒層３０を通過した段階で、処理ガスに含まれるアンモニアの９０％以上が分解され、処理ガスの温度も５００度近くまで上昇している。 When the inlet temperature of the catalyst tower A is 275 ° C. and 300 ° C., 90% or more of ammonia contained in the processing gas is decomposed when the processing gas passes through the first catalyst layer 30, and the temperature of the processing gas is also 500. It has risen to near degrees.
入口温度を２５０度とした場合、処理ガスが第１触媒層３０を通過した段階では、処理ガスに含まれるアンモニアの分解率は５０％であり、第１触媒層３０の出口温度も約３５０度である。しかし、第２触媒層５０乃至第４触媒層５２において処理ガスに含まれる残りのアンモニアが分解されることで、触媒塔Ａの最大温度は３８０度を超える。 When the inlet temperature is 250 degrees, the decomposition rate of ammonia contained in the processing gas is 50% when the processing gas passes through the first catalyst layer 30, and the outlet temperature of the first catalyst layer 30 is also about 350 degrees. It is. However, the remaining temperature contained in the processing gas is decomposed in the second catalyst layer 50 to the fourth catalyst layer 52, so that the maximum temperature of the catalyst tower A exceeds 380 degrees.
つまり、触媒塔Ａにおいて、アンモニア濃度が２％以上の高濃度のアンモニアを分解する場合、アンモニアの分解反応に伴う副生成物の発生率も８％を超えて高くなることが確認された。 That is, in the catalyst tower A, when decomposing high concentration ammonia having an ammonia concentration of 2% or more, it was confirmed that the generation rate of by-products accompanying the decomposition reaction of ammonia also exceeded 8%.
===アンモニア処理システムによる処理について===
第１及び第２確認試験の結果より、本実施形態にかかるアンモニア処理システム１では、第１触媒層３０のみを備える第１触媒塔３に、加熱装置２によって例えば２６０度に加熱した処理ガスを供給することとする。これによって、第１触媒塔３の温度を３８０度以下に維持しつつ、処理ガスに含まれるアンモニアの約５０％を先ず分解する。そして、第１触媒塔３から排出された処理ガスを冷却器４によって例えば約２６０度に冷却してから第２触媒塔５に供給することとする。これによって、第２触媒塔５における入口温度を下げることができる。さらに、第１触媒塔３においてアンモニアの約５０％を分解しているため、アンモニア濃度を低減させた処理ガスを第２触媒塔５に供給できる。このため、第２触媒塔５においても最大温度を３８０度以下に維持したまま、処理ガスに含まれる残りのアンモニアを分解できる。よって、アンモニア処理システム１では、第１触媒塔３及び第２触媒塔５の入口温度を約２６０度とすることで、第１触媒塔３及び第２触媒塔５の最大温度を３８０度以下とすることができ、副生成物の発生をより効率よく抑制しつつ、高濃度のアンモニアを分解できる。
=== About treatment with ammonia treatment system ===
From the results of the first and second confirmation tests, in the ammonia processing system 1 according to this embodiment, the processing gas heated to, for example, 260 degrees by the heating device 2 is applied to the first catalyst tower 3 including only the first catalyst layer 30. It will be supplied. As a result, about 50% of the ammonia contained in the process gas is first decomposed while maintaining the temperature of the first catalyst tower 3 at 380 ° C. or lower. The processing gas discharged from the first catalyst tower 3 is cooled to about 260 degrees by the cooler 4 and then supplied to the second catalyst tower 5. Thereby, the inlet temperature in the second catalyst tower 5 can be lowered. Furthermore, since about 50% of the ammonia is decomposed in the first catalyst tower 3, the treatment gas with a reduced ammonia concentration can be supplied to the second catalyst tower 5. For this reason, the remaining ammonia contained in the process gas can be decomposed while maintaining the maximum temperature at 380 ° C. or less in the second catalyst tower 5. Therefore, in the ammonia treatment system 1, the maximum temperature of the first catalyst tower 3 and the second catalyst tower 5 is set to 380 degrees or less by setting the inlet temperature of the first catalyst tower 3 and the second catalyst tower 5 to about 260 degrees. It is possible to decompose high-concentration ammonia while suppressing the generation of by-products more efficiently.
アンモニア処理システム１についても、第１触媒塔３及び第２触媒塔５において、アンモニア濃度が２％の処理ガスに含まれるアンモニアを分解し、第１触媒層３０乃至第４触媒層５２夫々の出口温度と、アンモニアの分解率とを確認する第３確認試験を行った。この第３確認試験について、図９を参照しつつ説明する。尚、図９（ａ）は、第１触媒塔３及び第２触媒塔５における触媒層ごとの温度及びアンモニア分解率を示すグラフであり、（ｂ）は、第１触媒塔３、冷却器４、第２触媒塔５の模式図である。第３確認試験では、第１触媒塔３の入口温度を約２６０度とし、第２触媒塔５の入口温度を約２８０度とした。 Also in the ammonia treatment system 1, the first catalyst tower 3 and the second catalyst tower 5 decompose the ammonia contained in the treatment gas having an ammonia concentration of 2%, and the outlets of the first catalyst layer 30 to the fourth catalyst layer 52, respectively. A third confirmation test was conducted to confirm the temperature and the decomposition rate of ammonia. The third confirmation test will be described with reference to FIG. 9A is a graph showing the temperature and ammonia decomposition rate for each catalyst layer in the first catalyst tower 3 and the second catalyst tower 5, and FIG. 9B is a graph showing the first catalyst tower 3 and the cooler 4 in FIG. FIG. 3 is a schematic diagram of a second catalyst tower 5. In the third confirmation test, the inlet temperature of the first catalyst tower 3 was about 260 degrees, and the inlet temperature of the second catalyst tower 5 was about 280 degrees.
図９（ａ）に示す第３確認試験の結果から、第１触媒塔３に備えられる第１触媒層３０の出口温度は約３７０度となり、第１触媒塔３によるアンモニアの分解率は５５％であった。第２触媒塔５の最大温度は、第３触媒層５１の出口温度であり３６０度であった。第２触媒塔５によって処理ガスに含まれるアンモニアの９９％が分解された。よって、アンモニア処理システム１では、第１触媒塔３及び第２触媒塔５の最大温度を３８０度以下とすることができ、副生成物の発生を効率よく抑制しつつ、処理ガスに含まれる高濃度のアンモニアを分解できることが確認された。 From the result of the third confirmation test shown in FIG. 9A, the outlet temperature of the first catalyst layer 30 provided in the first catalyst tower 3 is about 370 degrees, and the decomposition rate of ammonia by the first catalyst tower 3 is 55%. Met. The maximum temperature of the second catalyst tower 5 was the outlet temperature of the third catalyst layer 51 and was 360 degrees. 99% of the ammonia contained in the processing gas was decomposed by the second catalyst tower 5. Therefore, in the ammonia treatment system 1, the maximum temperature of the first catalyst tower 3 and the second catalyst tower 5 can be set to 380 ° C. or less, and the generation of by-products can be efficiently suppressed and the high gas contained in the treatment gas can be suppressed. It was confirmed that ammonia at a concentration could be decomposed.
＜まとめ＞
以上より、本実施形態にかかるアンモニア処理システム１は、少なくとも、処理ガスに含まれるアンモニアの一部を分解する第１触媒塔３と、第１触媒塔３から排出された処理ガスを冷却する冷却器４と、冷却された処理ガスに含まれる残りのアンモニアを分解する第２触媒塔５とを備えている。
<Summary>
As described above, the ammonia processing system 1 according to the present embodiment includes at least the first catalyst tower 3 that decomposes a part of the ammonia contained in the processing gas and the cooling that cools the processing gas discharged from the first catalyst tower 3. And a second catalyst tower 5 for decomposing the remaining ammonia contained in the cooled processing gas.
このアンモニア処理システム１によれば、処理ガスに含まれるアンモニアの一部を第１触媒塔３によって分解する。そして、第１触媒塔３におけるアンモニアの分解反応によって温度が上昇した処理ガスを冷却器４で冷却した後に、第２触媒塔５に供給して処理ガスに含まれる残りのアンモニアを分解する。従って、第１触媒塔３及び第２触媒塔５夫々の最大温度が上昇することを抑制できるため、副生成物の発生を抑制しつつ、高濃度のアンモニアを分解処理できる。 According to this ammonia treatment system 1, a part of the ammonia contained in the treatment gas is decomposed by the first catalyst tower 3. Then, after the processing gas whose temperature has been raised by the decomposition reaction of ammonia in the first catalyst tower 3 is cooled by the cooler 4, it is supplied to the second catalyst tower 5 to decompose the remaining ammonia contained in the processing gas. Therefore, since it can suppress that the maximum temperature of each of the 1st catalyst column 3 and the 2nd catalyst column 5 rises, high concentration ammonia can be decomposed | disassembled, suppressing generation | occurrence | production of a by-product.
また、前述したアンモニア処理システム１は、第１触媒塔３において、アンモニアの一部が分解される温度（例えば約２５０度〜２６０度）に、処理ガスを加熱する加熱装置２をさらに備えることが好ましい。例えば図８（ａ）に示すように、第１触媒塔３におけるアンモニアの分解率は、第１触媒塔３の入口温度の変化に伴って変化する。このため、加熱装置２によって、第１触媒塔３の入口温度を、例えば触媒の活性が得られる下限温度以上であって、処理ガスに含まれるアンモニアの一部のみが分解されるような温度に調整する。これによって、第１触媒塔３の最大温度が上昇することを抑制しつつ、処理ガスに含まれるアンモニアを効率よく分解できる。 The ammonia treatment system 1 described above further includes a heating device 2 that heats the treatment gas to a temperature at which a part of the ammonia is decomposed (for example, about 250 to 260 degrees) in the first catalyst tower 3. preferable. For example, as shown in FIG. 8A, the ammonia decomposition rate in the first catalyst tower 3 changes as the inlet temperature of the first catalyst tower 3 changes. For this reason, the inlet temperature of the first catalyst tower 3 is, for example, equal to or higher than the lower limit temperature at which the activity of the catalyst is obtained by the heating device 2 and is such that only a part of the ammonia contained in the process gas is decomposed. adjust. Thus, ammonia contained in the process gas can be efficiently decomposed while suppressing the maximum temperature of the first catalyst tower 3 from increasing.
また、前述したアンモニア処理システム１における加熱装置２は、第２触媒塔５から排出された処理ガスと、第１触媒塔３に供給される前の処理ガスとを熱交換する熱交換器２０を備えることが好ましい。このアンモニア処理システム１では、第２触媒塔５におけるアンモニアの分解反応によって温度が上昇した処理ガスの排熱を利用して、第１触媒塔３に供給する前の処理ガスを加熱できる。このため、アンモニア処理システム１において処理ガスを処理する際に必要なエネルギーを低減できる。 Further, the heating device 2 in the ammonia processing system 1 described above includes a heat exchanger 20 for exchanging heat between the processing gas discharged from the second catalyst tower 5 and the processing gas before being supplied to the first catalyst tower 3. It is preferable to provide. In this ammonia treatment system 1, the treatment gas before being supplied to the first catalyst tower 3 can be heated using the exhaust heat of the treatment gas whose temperature has risen due to the ammonia decomposition reaction in the second catalyst tower 5. For this reason, energy required when processing the processing gas in the ammonia processing system 1 can be reduced.
また、前述したアンモニア処理システム１における第１触媒塔３及び第２触媒塔５における触媒成分３３は、Ｐｔ−ＣｕＯ又はＰｔ−ＣｕＯ−Ｃｌであることが好ましい。このＰｔ−ＣｕＯ系又はＰｔ−ＣｕＯ−Ｃｌ系触媒は、例えばＦｅ−Ｍｇ系等の他の触媒に比べて、触媒活性が高く、高濃度のアンモニアに対しても高い分解率を有する。しかし、アンモニアの分解反応が速やかに生じる分、処理ガスの温度が上昇しやすい。しかし、本実施形態にかかるアンモニア処理システム１では、処理ガスに含まれるアンモニアの一部を第１触媒塔３によって分解した後、処理ガスを冷却器４で冷却してから第２触媒塔５に供給して残りのアンモニアを分解することで、第１触媒塔３及び第２触媒塔５の温度上昇を抑制できる。このため、副生成物の発生を抑制しつつ、触媒成分３３を備える触媒層によって高濃度のアンモニアをより効率的に分解できる。 Moreover, it is preferable that the catalyst component 33 in the first catalyst tower 3 and the second catalyst tower 5 in the ammonia treatment system 1 described above is Pt—CuO or Pt—CuO—Cl. This Pt—CuO-based or Pt—CuO—Cl-based catalyst has higher catalytic activity than other catalysts such as Fe—Mg-based, and has a high decomposition rate even with a high concentration of ammonia. However, the temperature of the processing gas is likely to rise because the ammonia decomposition reaction occurs rapidly. However, in the ammonia treatment system 1 according to the present embodiment, a part of the ammonia contained in the treatment gas is decomposed by the first catalyst tower 3, and then the treatment gas is cooled by the cooler 4 and then the second catalyst tower 5. By supplying and decomposing the remaining ammonia, the temperature rise of the 1st catalyst tower 3 and the 2nd catalyst tower 5 can be controlled. For this reason, high concentration ammonia can be decomposed | disassembled more efficiently by the catalyst layer provided with the catalyst component 33, suppressing generation | occurrence | production of a by-product.
また、前述したアンモニア処理システム１における第１触媒塔３は、第２触媒塔５よりも少ない量の触媒成分３３を有することが好ましい。アンモニアの分解反応は、処理ガスのアンモニア濃度が高いほど生じやすい。アンモニア処理システム１では、高濃度のアンモニアを含む処理ガスが、先ず、第１触媒塔３に供給され、第１触媒塔３においてアンモニアの一部が分解された処理ガスが第２触媒塔５に供給される。つまり、第１触媒塔３に供給される処理ガスのアンモニア濃度の方が、第２触媒塔５に供給される処理ガスのアンモニア濃度よりも高い。従って、第１触媒塔３は第１触媒層３０のみを備え、第２触媒塔５は第２触媒層５０乃至第４触媒層５２を備えることで、第１触媒塔３において処理ガスに含まれるアンモニアの一部を分解し、第２触媒塔５において残りのアンモニアを分解する。これによって、第１触媒塔３及び第２触媒塔５の最大温度を抑制しつつ、処理ガスに含まれる高濃度のアンモニアを効率よく分解できる。 The first catalyst tower 3 in the ammonia treatment system 1 described above preferably has a smaller amount of the catalyst component 33 than the second catalyst tower 5. The ammonia decomposition reaction is more likely to occur as the ammonia concentration of the processing gas increases. In the ammonia treatment system 1, a treatment gas containing high-concentration ammonia is first supplied to the first catalyst tower 3, and the treatment gas partially decomposed in the first catalyst tower 3 is fed to the second catalyst tower 5. Supplied. That is, the ammonia concentration of the processing gas supplied to the first catalyst tower 3 is higher than the ammonia concentration of the processing gas supplied to the second catalyst tower 5. Accordingly, the first catalyst tower 3 includes only the first catalyst layer 30, and the second catalyst tower 5 includes the second catalyst layer 50 to the fourth catalyst layer 52, so that the first catalyst tower 3 is included in the processing gas. A part of the ammonia is decomposed, and the remaining ammonia is decomposed in the second catalyst tower 5. Thereby, high concentration ammonia contained in the process gas can be efficiently decomposed while suppressing the maximum temperatures of the first catalyst tower 3 and the second catalyst tower 5.
===アンモニア処理方法について===
本実施形態にかかるアンモニアの処理方法について説明する。このアンモニア処理方法では、先ず、処理ガスに含まれるアンモニアの一部を第１触媒塔３によって分解する第１分解工程を行う。次に、アンモニアの一部が分解された処理ガスを冷却器４によって冷却する冷却工程を行う。次に、冷却された処理ガスに含まれる残りのアンモニアを第２触媒塔５触媒によって分解する第２分解工程を行う。
=== About ammonia treatment method ===
A method for treating ammonia according to this embodiment will be described. In this ammonia treatment method, first, a first decomposition step of decomposing a part of ammonia contained in the process gas by the first catalyst tower 3 is performed. Next, a cooling process is performed in which the processing gas in which a part of the ammonia is decomposed is cooled by the cooler 4. Next, a second decomposition step is performed in which the remaining ammonia contained in the cooled processing gas is decomposed by the second catalyst tower 5 catalyst.
このアンモニアの処理方法では、第１分解工程において、処理ガスに含まれるアンモニアの一部を分解するため、処理ガスに含まれる全アンモニアを分解する場合に比べて、第１触媒塔３の最大温度の上昇を抑制できる。また、第１分解工程におけるアンモニアの分解反応によって温度が上昇した処理ガスを冷却工程において冷却してから、第２触媒塔５に供給できる。また、第２触媒塔５に供給される処理ガスは、第１分解工程においてアンモニアの濃度が低減している。よって、第２分解工程では、第２触媒塔５の温度が上昇することを抑制できる。このアンモニアの処理方法では、第１触媒塔３及び第２触媒塔５の最大温度が上昇することを抑制できるため、副生成物の発生を抑制しつつ、高濃度のアンモニアを分解処理できる。 In this ammonia treatment method, in the first decomposition step, a part of the ammonia contained in the treatment gas is decomposed, so that the maximum temperature of the first catalyst tower 3 is higher than when all the ammonia contained in the treatment gas is decomposed. Can be suppressed. In addition, after the treatment gas whose temperature has been raised by the ammonia decomposition reaction in the first decomposition step is cooled in the cooling step, it can be supplied to the second catalyst tower 5. The process gas supplied to the second catalyst tower 5 has a reduced ammonia concentration in the first decomposition step. Therefore, it is possible to suppress the temperature of the second catalyst tower 5 from increasing in the second decomposition step. In this ammonia treatment method, since the maximum temperature of the first catalyst tower 3 and the second catalyst tower 5 can be suppressed from rising, it is possible to decompose high-concentration ammonia while suppressing the generation of by-products.
===その他の実施形態について===
前述した実施の形態は、本発明の理解を容易にするためのものであり、本発明を限定して解釈するためのものではない。本発明はその趣旨を逸脱することなく変更や改良等が可能であり、また本発明はその等価物も含むものである。
=== About other embodiments ===
The above-described embodiment is intended to facilitate understanding of the present invention, and is not intended to limit the present invention. The present invention can be changed and improved without departing from the gist thereof, and the present invention includes equivalents thereof.
前述した処理システム１では、第１触媒塔３及び第２触媒塔５によって処理ガスに含まれるアンモニアを分解することとした。しかし、特にこれに限定されるものではなく、例えば、図１０に示すアンモニア処理システム１０のように、処理ガスに含まれるアンモニアを２より多い複数の分解塔によって分解してもよい。尚、図１０は、アンモニア処理システム１０の構成例を示す模式図である。 In the processing system 1 described above, the ammonia contained in the processing gas is decomposed by the first catalyst tower 3 and the second catalyst tower 5. However, the present invention is not particularly limited to this. For example, ammonia contained in the processing gas may be decomposed by a plurality of decomposition towers greater than two as in the ammonia processing system 10 shown in FIG. FIG. 10 is a schematic diagram illustrating a configuration example of the ammonia processing system 10.
このアンモニア処理システム１０は、前述したアンモニア処理システム１における第２触媒塔５にかえて、第２触媒塔５ａを備えている。そして、この第２触媒塔５ａと冷却器４との間にさらに第３触媒塔１５と、中間冷却器１６とを備えている。 The ammonia treatment system 10 includes a second catalyst tower 5a in place of the second catalyst tower 5 in the ammonia treatment system 1 described above. A third catalyst tower 15 and an intermediate cooler 16 are further provided between the second catalyst tower 5 a and the cooler 4.
第３触媒塔１５は、例えば、第２触媒層５０が、基材の一方の端面側から他方の端面側に向かって処理ガスが流れるように配置されている。また、第３触媒塔１５は、第１触媒塔３によってアンモニアの一部が分解された後、冷却器４で冷却された処理ガスが供給され、この処理ガスに含まれるアンモニアのさらに一部を分解する。 In the third catalyst tower 15, for example, the second catalyst layer 50 is arranged so that the processing gas flows from one end face side of the base material toward the other end face side. The third catalyst tower 15 is supplied with the processing gas cooled by the cooler 4 after a part of the ammonia is decomposed by the first catalyst tower 3, and further part of the ammonia contained in the processing gas is supplied. Decompose.
中間冷却器１６は、熱交換器６０と、この熱交換器６０に空気を送風するブロワ６１とを備えている。熱交換器６０は、第３触媒塔１５から排出された処理ガスと、ブロワ６１を介して供給される空気とを熱交換させる。これによって、熱交換器６０は、第３触媒塔１５から排出された処理ガスを冷却する。 The intermediate cooler 16 includes a heat exchanger 60 and a blower 61 that blows air to the heat exchanger 60. The heat exchanger 60 exchanges heat between the processing gas discharged from the third catalyst tower 15 and the air supplied via the blower 61. Thereby, the heat exchanger 60 cools the processing gas discharged from the third catalyst tower 15.
第２触媒塔５ａは、例えば、第３触媒層５１、第４触媒層５２が順に、夫々の基材の一方の端面側から他方の端面側に向かって処理ガスが流れるように直列に配置されている。第２触媒塔５ａは、中間冷却器１６で冷却された処理ガスが供給され、この処理ガスに含まれる残りのアンモニアを分解する。 The second catalyst tower 5a is, for example, arranged in series such that the third catalyst layer 51 and the fourth catalyst layer 52 are sequentially flowed from one end surface side to the other end surface side of each base material. ing. The second catalyst tower 5a is supplied with the processing gas cooled by the intercooler 16, and decomposes the remaining ammonia contained in the processing gas.
このアンモニア処理システム１０では、第１触媒塔３、第２触媒塔５、第３触媒塔１５及び冷却器４、中間冷却器１６により、処理ガスを冷却しつつ、処理ガスに含まれるアンモニアを３段階に分けて分解する。これによって、各触媒塔の最大温度の上昇をより精度よく抑制できる。このため、高濃度のアンモニアを分解する場合であっても、副生成物の発生をより確実に抑制できる。 In this ammonia treatment system 10, the first catalyst tower 3, the second catalyst tower 5, the third catalyst tower 15, the cooler 4, and the intermediate cooler 16 are used to cool the process gas and to remove 3 ammonia contained in the process gas. Disassemble in stages. Thereby, the increase in the maximum temperature of each catalyst tower can be suppressed with higher accuracy. For this reason, even when it is a case where high concentration ammonia is decomposed | disassembled, generation | occurrence | production of a by-product can be suppressed more reliably.
尚、本発明のアンモニア処理システムでは、少なくとも２つの触媒塔を備え、この触媒塔同士の間に中間冷却器（冷却器）を備えていればよい。この触媒塔及び冷却器の数は、処理ガスのアンモニア濃度や、アンモニア処理システムを持ち運ぶ際の可搬性等に応じて定められればよい。例えば、前述したアンモニア処理システム１のように、トラック９等に車載する場合には、持ち運びやすいように触媒塔及び冷却器の数が少ない方が好ましい。一方、より高濃度のアンモニアを分解する場合等には、複数の触媒塔によってより確実に副生成物の発生を抑制しつつ、アンモニアを分解することが好ましい。 In the ammonia treatment system of the present invention, at least two catalyst towers may be provided, and an intermediate cooler (cooler) may be provided between the catalyst towers. The number of catalyst towers and coolers may be determined according to the ammonia concentration of the processing gas, the portability when carrying the ammonia processing system, and the like. For example, when the vehicle is mounted on a truck 9 or the like as in the ammonia treatment system 1 described above, it is preferable that the number of catalyst towers and coolers is small so that the vehicle can be easily carried. On the other hand, when decomposing a higher concentration of ammonia, it is preferable to decompose ammonia while more reliably suppressing the generation of by-products by using a plurality of catalyst towers.
また、前述したアンモニア処理システム１における第１触媒塔３は第１触媒層３０を備え、第２触媒塔４は第２触媒層５０乃至第４触媒層５２を備えることとしたが、特にこれに限定されるものではない。第１触媒塔３及び第２触媒塔５は、第１触媒塔３によって処理ガスに含まれる一部のアンモニアが分解され、第２触媒塔５によって処理ガスに含まれる残りのアンモニアが分解されるように、夫々触媒を備えていればよい。 Further, in the above-described ammonia treatment system 1, the first catalyst tower 3 includes the first catalyst layer 30, and the second catalyst tower 4 includes the second catalyst layer 50 to the fourth catalyst layer 52. It is not limited. In the first catalyst tower 3 and the second catalyst tower 5, a part of ammonia contained in the processing gas is decomposed by the first catalyst tower 3, and the remaining ammonia contained in the processing gas is decomposed by the second catalyst tower 5. Thus, it is only necessary to provide a catalyst for each.
例えば、前述した実施形態にかかる触媒層の多孔質物質３２に関しては、Ａｌ２Ｏ３を例示したが、触媒成分３３を担持できればこれに限られない。触媒成分３３に関しては、Ｐｔ−ＣｕＯ又はＰｔ−ＣｕＯ−Ｃｌを例示したが、アンモニアの分解反応に活性を有する触媒であればこれに限られない。基材３１に関しては、ベース部３４の一方の短尺辺を中心として巻回された円柱形状を呈していることとしたが、例えば、複数のベース部３４を重ね合わせた積層構造であることとしてもよい。また、基材３１は、例えば、金属やセラミックス等から形成され、側面を共有する複数の中空の六角柱を蜂の巣状とした、いわゆるハニカム構造であってもよい。これらは、前述したアンモニア処理システム１０における第３触媒塔１５についても同様である。 For example, regarding the porous material 32 of the catalyst layer according to the above-described embodiment, Al 2 O 3 is exemplified, but the present invention is not limited to this as long as the catalyst component 33 can be supported. Regarding the catalyst component 33, Pt—CuO or Pt—CuO—Cl is exemplified, but the catalyst component 33 is not limited to this as long as the catalyst has activity in the decomposition reaction of ammonia. The base material 31 has a cylindrical shape wound around one short side of the base portion 34. For example, the base material 31 may have a laminated structure in which a plurality of base portions 34 are stacked. Good. The base material 31 may be a so-called honeycomb structure in which a plurality of hollow hexagonal columns that are formed of metal, ceramics, or the like and share side surfaces are formed in a honeycomb shape, for example. The same applies to the third catalyst tower 15 in the ammonia treatment system 10 described above.
また、触媒塔夫々に備えられる触媒層の数（触媒の量）は、触媒塔の入口温度、処理ガスに含まれるアンモニアの濃度、触媒層の大きさ、触媒の分解性能等に応じて適宜決定されればよい。例えば、第１触媒塔３と、第２触媒塔５とは互いに異なる触媒を備えてもよい。また、第１触媒塔３と第２触媒塔５とは同じ量の触媒を備えていてもよい。 Further, the number of catalyst layers (amount of catalyst) provided in each catalyst tower is appropriately determined according to the inlet temperature of the catalyst tower, the concentration of ammonia contained in the processing gas, the size of the catalyst layer, the decomposition performance of the catalyst, and the like. It only has to be done. For example, the first catalyst tower 3 and the second catalyst tower 5 may include different catalysts. Further, the first catalyst tower 3 and the second catalyst tower 5 may include the same amount of catalyst.
また、前述した実施形態にかかるアンモニア処理システム１、１０では、第２触媒塔５から排出された処理ガスと、第１触媒塔３に供給される前の処理ガスとを熱交換する熱交換器２０を備えることとした。しかし、特にこれに限られるものではなく、ヒータ２１のみによって第１触媒塔３に供給される前の処理ガスを加熱してもよい。 In the ammonia processing systems 1 and 10 according to the above-described embodiments, the heat exchanger that exchanges heat between the processing gas discharged from the second catalyst tower 5 and the processing gas before being supplied to the first catalyst tower 3. 20 is provided. However, the present invention is not particularly limited to this, and the processing gas before being supplied to the first catalyst tower 3 may be heated only by the heater 21.
１、１０…アンモニア処理システム，２…加熱装置，３…第１触媒塔，４…冷却器，５、５ａ…第２触媒塔，６…流量調整装置，７…アンモニアタンク，８、４１、６１…ブロワ，９…トラック，１５…第３触媒塔，１６…中間冷却器，２０、４０、６０…熱交換器，２１…ヒータ，３０…第１触媒層，３１…基材，３２…多孔質物質，３３…触媒成分，３４…ベース部，３５…突出片，３６…貫通孔，５０…第２触媒層，５１…第３触媒層，５２…第４触媒層 DESCRIPTION OF SYMBOLS 1,10 ... Ammonia processing system, 2 ... Heating device, 3 ... 1st catalyst tower, 4 ... Cooler, 5, 5a ... 2nd catalyst tower, 6 ... Flow control device, 7 ... Ammonia tank, 8, 41, 61 DESCRIPTION OF SYMBOLS ... Blower, 9 ... Track, 15 ... Third catalyst tower, 16 ... Intermediate cooler, 20, 40, 60 ... Heat exchanger, 21 ... Heater, 30 ... First catalyst layer, 31 ... Base material, 32 ... Porous Substance 33 ... Catalyst component 34 ... Base part 35 ... Projection piece 36 ... Through hole 50 ... Second catalyst layer 51 ... Third catalyst layer 52 ... Fourth catalyst layer
Claims (3)
前記第１触媒塔の温度が３８０度以下に維持されるとともに前記処理ガスに含まれるアンモニアの一部が分解されるように、前記第１触媒塔に供給される前記処理ガスを約２６０度の温度に加熱する加熱装置と、
冷却された前記処理ガスに含まれる残りの前記アンモニアを分解する第２触媒塔と、
前記第２触媒塔の温度が３８０度以下に維持されるとともに前記処理ガスに含まれる残りのアンモニアが分解されるように、前記第１触媒塔から排出された前記処理ガスを約２６０度の温度に冷却する冷却器と、
前記第２触媒塔から排出された前記処理ガスと、前記第１触媒塔に供給される前の前記処理ガスとを熱交換する熱交換器と、を備え、
前記第１触媒塔及び前記第２触媒塔における触媒は、夫々、触媒成分を担持する多孔質物質がコーティングされた基材からなり、
前記基材は、シート状のベース部と、前記ベース部の一方の表面から立ち上がる複数の突出片と、前記ベース部を貫通する複数の貫通孔と、を有し、前記ベース部の隙間に前記突出片が介在するように重なり合う
ことを特徴とするアンモニア処理システム。 A first catalyst tower for decomposing a part of ammonia contained in the processing gas;
The process gas supplied to the first catalyst tower is about 260 degrees so that the temperature of the first catalyst tower is maintained at 380 degrees or less and a part of ammonia contained in the process gas is decomposed. A heating device for heating to a temperature;
A second catalyst tower for decomposing the remaining ammonia contained in the cooled processing gas;
The process gas discharged from the first catalyst tower is heated to a temperature of about 260 degrees so that the temperature of the second catalyst tower is maintained at 380 degrees or less and the remaining ammonia contained in the process gas is decomposed. With a cooler to cool to,
A heat exchanger for exchanging heat between the process gas discharged from the second catalyst tower and the process gas before being supplied to the first catalyst tower,
The catalysts in the first catalyst tower and the second catalyst tower are each composed of a base material coated with a porous material carrying a catalyst component,
The base material has a sheet-like base portion, a plurality of projecting pieces rising from one surface of the base portion, and a plurality of through holes penetrating the base portion. Ammonia treatment system characterized by overlapping so that protruding pieces intervene.
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