JP5939812B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5939812B2
JP5939812B2 JP2012014566A JP2012014566A JP5939812B2 JP 5939812 B2 JP5939812 B2 JP 5939812B2 JP 2012014566 A JP2012014566 A JP 2012014566A JP 2012014566 A JP2012014566 A JP 2012014566A JP 5939812 B2 JP5939812 B2 JP 5939812B2
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oxide semiconductor
oxygen
layer
transistor
oxide
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JP2013157359A5 (enExample
JP2013157359A (ja
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純一 肥塚
純一 肥塚
優一 佐藤
優一 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP2012014566A 2012-01-26 2012-01-26 半導体装置の作製方法 Active JP5939812B2 (ja)

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JP2012014566A JP5939812B2 (ja) 2012-01-26 2012-01-26 半導体装置の作製方法

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JP2012014566A JP5939812B2 (ja) 2012-01-26 2012-01-26 半導体装置の作製方法

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JP2016098751A Division JP6283710B2 (ja) 2016-05-17 2016-05-17 半導体装置の作製方法

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JP2013157359A JP2013157359A (ja) 2013-08-15
JP2013157359A5 JP2013157359A5 (enExample) 2014-11-13
JP5939812B2 true JP5939812B2 (ja) 2016-06-22

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI642186B (zh) * 2013-12-18 2018-11-21 日商半導體能源研究所股份有限公司 半導體裝置
US10096489B2 (en) * 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9887291B2 (en) * 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
CN107210230B (zh) 2015-02-12 2022-02-11 株式会社半导体能源研究所 氧化物半导体膜及半导体装置
JPWO2023189549A1 (enExample) * 2022-03-30 2023-10-05

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102329497B1 (ko) * 2009-11-13 2021-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
CN105206514B (zh) * 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
WO2011070900A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101540039B1 (ko) * 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device

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