JP5931942B2 - Photovoltaic element and manufacturing method thereof - Google Patents

Description

  The present invention relates to a photovoltaic device that effectively suppresses the potential-induced degradation (PID) effect and a method for manufacturing the photovoltaic device.

  In recent years, the problem that the PID effect gives to the reliability of photovoltaic modules and modules in which the photovoltaic elements are installed has become increasingly important. All manufacturers of photovoltaic elements are focusing on developing photovoltaic elements that suppress the occurrence of the PID effect and modules on which the photovoltaic elements are installed.

The PID effect was first discovered in 2005 by Sunpower in an n-type silicon-based photovoltaic device. However, if the installation module is kept at a high temperature for a long time and used at a high voltage in a high humidity environment, electric leakage occurs between the glass and the installation material, and a large amount of charge is concentrated on the surface of the photovoltaic device. The surface effect of the photovoltaic element deteriorates, the functional characteristics, filling ratio (FF), short circuit current density (J _SC ), open circuit voltage (V _OC ), etc. Module functionality is lower than at design time. These phenomena that cause decay are referred to as evoked potential decay (PID) effects.

The silicon-based photovoltaic device achieves the suppression of the PID effect by adjusting the refractive index of the SiN _X antireflection layer in the prior art. However, since the above-described method sacrifices the effect of the antireflection layer itself, the reflectance at the antireflection layer is increased. In addition, the above method cannot be applied to other types of photovoltaic elements.

  In the related literature, general categories of the evoked potential decay effect are classified into the following three types. The first is the effect on the active region of the surface of the semiconductor material. The second is the performance attenuation and shunting phenomenon of the semiconductor junction. The third is electrolytic corrosion and metal conductive ion transfer. In general, much of the PID effect occurs from the edge of the photovoltaic element. Therefore, photovoltaic devices and photovoltaic device modules can suppress the generation of PID effect, in particular, suppress the PID effect generated from the edge of the photovoltaic device and extend the useful life of the photovoltaic device. Experts in this field continue to study how to make this possible.

  Therefore, the present inventor considers that the above-mentioned drawbacks can be improved, and as a result of intensive studies, the present inventors have arrived at a proposal of a photovoltaic element of the present invention and a method for manufacturing the same, which can effectively improve the above-described problems through rational design. It was.

  The present invention has been made in view of such conventional problems. In order to solve the above problems, it is a main object of the present invention to provide a photovoltaic device that effectively suppresses the occurrence of the PID effect and a method for manufacturing the photovoltaic device.

In order to solve the above-described problems and achieve the object, the photovoltaic device according to the present invention is:
A group having a plurality of side surfaces and comprising a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction a combination of a semiconductor structure comprising any one of the joint which is selected from among, formed by coating the side surfaces of the multiple, and the for photovoltaic devices to suppress the evoked potential damping effect to be generated and a first protective layer, a combination of the semiconductor structure further comprises a back surface to the surface of the surface and the table of the table, on the surface of the table roughening treatment is performed, the first protective layer side of the surface of the table Reflected to extend to the edge and to the edge of the back surface, and the photovoltaic element is formed on the front surface and extends to cover the first protective layer on the edge of the front surface Formed on the back surface and the positive electrode that is formed on the anti-reflective layer, anti-reflective layer and forms ohmic contact with the front surface At least one back surface bus electrode, and a back contact formed on the back surface and covering the back surface to form a region other than the at least one back surface bus electrode. aluminum, titanium, zirconium oxide, selected from any one of the group constituted by a mixture of hafnium oxide, and aforementioned compounds characterized Rukoto.

  Furthermore, the photovoltaic device according to the present invention further comprises a second protective layer. The second protective layer is formed by covering the first protective layer.

In addition, regarding the method for manufacturing a photovoltaic device according to the embodiment of the present invention, first, a combination of semiconductor configurations is prepared. The combination of the semiconductor configuration has a plurality of side surfaces, and a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction. Or, it has a joint portion of another type . Next , the method of the present invention forms a first protective layer and covers a plurality of side surfaces of a combination of semiconductor configurations. The combination of semiconductor structures further includes a front surface and a back surface relative to the front surface, and a step of roughening the front surface and the first protective layer extending to the edge of the front surface. And extending the first protective layer to the edge of the back surface and forming an antireflection layer in contact with the front surface, covering the first protective layer on the front surface edge and extending Forming a positive electrode on the antireflection layer, forming an ohmic contact with the positive electrode and the front surface, forming at least one back surface bus electrode on the back surface, and forming a back contact on the back surface And forming a region other than the at least one back surface bus electrode by covering the back surface, and the first protective layer is composed of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and the above-mentioned Consists of a mixture of compounds It is selected from any one of the groups being.

  According to the present invention, the PID effect generated by the photovoltaic element of the present invention can be effectively suppressed by the first protective layer covering a plurality of side surfaces of a combination of semiconductor configurations.

It is a cross-sectional schematic diagram explaining the photovoltaic device which concerns on one preferable embodiment of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the photovoltaic element which concerns on one preferable embodiment of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the photovoltaic element which concerns on one preferable embodiment of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon-based photovoltaic element of the 1st example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon-based photovoltaic element of the 1st example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon-based photovoltaic element of the 1st example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon-based photovoltaic element of the 1st example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon-based photovoltaic element of the 2nd example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon-based photovoltaic element of the 2nd example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon-based photovoltaic element of the 3rd example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon-based photovoltaic element of the 3rd example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon base photovoltaic device of the 4th example of this invention. It is a cross-sectional schematic diagram explaining the manufacturing method of the silicon base photovoltaic device of the 4th example of this invention.

  Preferred embodiments of the present invention will be described with reference to the accompanying drawings. The embodiments described below do not limit the contents of the present invention described in the claims. In addition, all of the configurations described below are not necessarily essential requirements of the present invention.

The photovoltaic element 1 shown in FIG. 1 comprises a combination 10 of semiconductor configurations and a first protective layer 12. The semiconductor configuration combination 10 has a plurality of side surfaces 102 and has a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction. A junction or other type of junction is provided. In other words, the photovoltaic device 1 of the present invention includes a single crystal silicon photovoltaic device, a pseudo single crystal silicon photovoltaic device, a polycrystalline silicon photovoltaic device, a gallium arsenide photovoltaic device, and a thin film. Amorphous silicon photovoltaic device, thin film microcrystalline (μ-Si) photovoltaic device, thin film cadmium sulfide (CdS) photovoltaic device, thin film cadmium antimonide (CdTe) photovoltaic device, thin film selenization Indium copper (CuInSe ₂ , CIS) photovoltaic devices, Thin film gallium indium copper selenide (Cu (In, Ga) Se ₂ , CIGS) photovoltaic devices, Thin film dye sensitized (DSSC) photovoltaic devices Various types of photovoltaic elements can be applied. In FIG. 1, the semiconductor configuration combination 10 is illustrated with the junction 104 as a representative.

  In particular, the first protective layer 12 is formed by covering a plurality of side surfaces 102 of the semiconductor configuration combination 10. Thereby, the first protective layer 12 effectively suppresses the evoked potential attenuation effect generated by the photovoltaic device 1 of the present invention.

  In a preferred embodiment, the first protective layer 12 is composed of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, or other metal oxide or a mixture of the above compounds.

  In a preferred embodiment, the thickness of the first protective layer 12 is about 0.2-100 nm.

  Furthermore, as shown in FIG. 1, the photovoltaic device 1 of the present invention further includes a second protective layer 14. The second protective layer 14 is formed by covering the first protective layer 12.

  In a preferred embodiment, the second protective layer 14 is composed of silicon nitride, silicon oxynitride, or a mixture of the above compounds.

  2 to 3 are schematic cross-sectional views of a method for manufacturing a photovoltaic device as shown in FIG. 1 according to a specific preferred embodiment of the present invention.

  First, the method of the present invention provides a semiconductor configuration combination 10, the semiconductor configuration combination 10 having a plurality of side surfaces 102, and a pn junction, an np junction, and a pin junction. Part, nip junction, double junction, multiple junction, or other type junction. In FIG. 2, the combination 10 of the semiconductor configuration is illustrated with the junction 104 as a representative (see FIG. 2).

  Finally, the method of the present invention forms the first protective layer 12 and covers the plurality of side surfaces 102 of the semiconductor configuration combination 10 (see FIG. 3).

  Furthermore, the method of the present invention forms a second protective layer 14 that covers the first protective layer 12 to complete the structure of the photovoltaic device 1 shown in FIG.

  Hereinafter, several examples will be described in detail, and a method of implementing the photovoltaic device 1 and the manufacturing method thereof of the present invention in the structure of the silicon-based photovoltaic device and the manufacturing method thereof will be described.

  4 to 7 are schematic cross-sectional views of the manufacturing method and structure of the silicon-based photovoltaic device according to the first example of the present invention.

  According to FIG. 4, first, the method of the present invention provides a semiconductor configuration combination 10, which includes a plurality of side surfaces 102, a front surface 106, and a back surface 108 relative to the front surface 106. Have. In FIG. 4, the junction 104 is shown as a representative in the combination 10 of the semiconductor configuration. A semiconductor configuration combination 10 including a silicon base material 101 having a first conductivity type is prepared, and the silicon base material 101 may be a single crystal silicon base material, a pseudo single crystal silicon base material, a polycrystalline silicon base material, or the like. The thickness of the silicon base material 101 is about 150 to 220 micrometers, but is not limited to this range.

  The semiconductor configuration combination 10 further includes a joint 104, and the type of the joint 104 is as described above, and will not be described again.

  As shown in FIG. 4, in the method of the present invention, the front surface 106 is subjected to a texturing process. That is, the front surface 106 is a roughened surface. The roughening of the front surface 106 causes acid or alkali etching to form a pyramid texture structure having a non-uniform size on the front surface 106. The front surface 106 becomes a light entrance surface, and the roughened front surface 106 effectively reduces the reflectance of incident light.

Common surface roughening techniques form V-shaped grooves or pyramid structures, and the roughness of these roughened surfaces is a size from a few centimeters to a few micrometers. In order to maintain the photoelectric conversion efficiency with respect to the photovoltaic element, a technique for increasing the roughness of the incident surface of the photovoltaic element to a nanometer size has already been developed. The incident surface of these photovoltaic elements has a structure in which nanoscale pillars are distributed, and these nanoscale pillar structures have a very high penetration width ratio (depth˜1 · m, width˜100 nm). A photovoltaic device having an incident surface roughened at a nanometer size reduces the reflectivity to 5% or less for incident light of 300 nm to 1000 nm.
[Example 1]

  In the first example, the method of the present invention adds a dopant within a range of the roughened surface 106 to form a semiconductor region 103 having a second conductivity type, and to form a silicon-based photovoltaic. The emitter of the element. In this preferred embodiment, the dopant is boron, phosphorus, arsenic, or the like. The doping agent is added using a diffusion furnace, screen printing, spin coating, spraying, or the like.

  In a preferred embodiment, the silicon base material 101 is p-type and the semiconductor region 103 is n-type. In another preferred embodiment, the silicon base material 101 is n-type and the semiconductor region 103 is p-type.

  Next, the method of the first example of the present invention forms the first protective layer 12 and coats the plurality of side surfaces 102 of the semiconductor configuration combination 10. The first exemplary method of the present invention also extends the first protective layer 12 to the edge of the front surface 106 and extends the first protective layer 12 to the edge of the back surface 108 (FIG. 5). reference).

  In a preferred embodiment, the width that the first protective layer 12 extends to the edge of the front surface 106 is between about 0.1 mm and 100 mm, and the first protective layer 12 is the edge of the back surface 108. The width extended to about 0.1 mm to 100 mm is not limited thereto. The thickness of the first protective layer 12 is as described above, and the re-description is omitted.

  Subsequently, in a preferred embodiment, the first protective layer 12 is formed by plasma CVD (plasma-enhanced chemical vapor deposition (PECVD)), atmospheric pressure chemical vapor deposition (APCVD), It is performed by a growth method (metalorganic chemical vapor deposition (MOCVD) process, an atomic layer deposition (ALD) process, a physical vapor deposition (PVD) process, or the like.

  In order to avoid contamination of the first protective layer 12 by the metallic elements in the electrode subsequently formed, the method of the first example of the present invention further forms a second protective layer 14 to form the first protective layer 12. To coat. The configuration of the second protective layer 14 is as described above and will not be described again (see FIG. 5).

  In the first exemplary method of the present invention, the antireflection layer 16 is formed on the front surface 106, and the first protective layer 12 on the edge of the front surface 106 is covered and extended. In a preferred embodiment, the antireflection layer 16 is formed by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. In addition, the antireflection layer 16 further increases the photocurrent and reduces the composite current of carriers on the surface of the silicon-based photovoltaic element 1 to protect the silicon-based photovoltaic element 1 (for example, scratch and moisture). Etc. (see FIG. 6).

  In the first exemplary method of the present invention, the positive electrode 17 is formed on the antireflection layer 16 on the front surface 106, and an ohmic contact is formed together with the front surface 106. In this preferred embodiment, the positive electrode 17 is completed by local screen printing or application of a predetermined metal paste (eg, silver paste) to the front surface 106 and sintering. In the sintering process, the glass powder in the silver paste is penetrated by the silicon of the antireflection layer 16 and the front surface 106 to form a contact, and an ohmic contact is formed between the positive electrode 17 and the front surface 106. In another preferred embodiment, the method of the first example of the present invention forms a groove on the antireflection layer 16, exposes the front surface 106 in the groove, and forms the positive electrode 17 in the groove. The front surface 106 exposed to the outside may be coated (see FIG. 7).

  The first exemplary method of the present invention then forms at least one backside bus electrode 18 on the backside surface 108 (see FIG. 7).

Finally, the first exemplary method of the present invention causes the back contact 19 to be formed on the back surface 108 to cover the back surface 108 to form regions other than the at least one backside bus electrode 18 to form a silicon-based optical The electromotive element 1 is completed. In this preferred embodiment, the positive electrode 17, the at least one backside bus electrode 18, and the back contact 19 apply a predetermined metal paste to the antireflection layer 16 and the back surface 108 by local screen printing (Sreen print). It is completed by sintering at a temperature of 570 ° C. to 840 ° C. by a co-firing process. Subsequently, the silicon-based photovoltaic element 1 is installed and modularized. During use of the module, the first protective layer 12 that covers the plurality of side surfaces 102 of the semiconductor component combination 10 is accumulated in a sealing material (usually ethylene-vinyl acetate (EVA) or glass plate). Electric charges are introduced along the surface of the first protective layer 12 into the silicon base material 101 having the first conductivity type. As a result, the first protective layer 12 effectively exhibits the induced potential attenuation effect generated by the silicon-based photovoltaic device 1 of the present invention, particularly the induced potential attenuation effect emitted from the side surface 102 of the silicon-based photovoltaic device 1. Let it be suppressed.
[Example 2]

  8 and 9 illustrate a method for manufacturing a silicon-based photovoltaic device according to the second example of the present invention and the structure thereof by way of schematic cross-sectional views.

  Since the manufacturing method of the second example of the present invention is almost similar to the manufacturing method of the first example of the present invention, only parts different from the manufacturing method of the first example of the present invention will be described below. As shown in FIG. 8, the manufacturing method of the second example of the present invention extends the first protective layer 12 to cover the front surface 106, and extends the first protective layer 12 to the edge of the back surface 108. Let it come out.

  In the manufacturing method of the second example of the present invention, the first protective layer 12 that covers the front surface 106 is formed by forming the antireflection layer 16. Similarly, as shown in FIG. 8, in the manufacturing method of the second example of the present invention, the second protective layer 14 is formed to cover the first protective layer 12 (see FIG. 8).

Finally, as shown in FIG. 9, the second exemplary manufacturing method of the present invention forms the positive electrode 17 on the antireflection layer 16 and forms an ohmic contact with the front surface 106. In the second exemplary manufacturing method of the present invention, at least one back surface bus electrode 18 is formed on the back surface 108, a back contact 19 is formed on the back surface 108, and the back surface 108 is coated. Regions other than the at least one backside bus electrode 18 are formed to complete the silicon-based photovoltaic device 1. In a specific embodiment, the method of the second example of the present invention is such that the glass powder in the silver paste penetrates the antireflection layer 16 and the silicon on the front surface 106 during the sintering process to form a contact. 17 and the front surface 106 form an ohmic contact. In another specific embodiment, the method of the second exemplary embodiment of the present invention causes grooves to be formed in the antireflection layer 16 and the first protective layer 12, the front surface 106 in the grooves is exposed to the outside, and the positive electrode 17 is exposed to the grooves. A front surface 106 formed inside and exposed outside is coated.
[Example 3]

  10 and 11 illustrate a method and a structure for manufacturing a silicon-based photovoltaic device according to the third example of the present invention, using schematic cross-sectional views.

  Since the manufacturing method of the third example of the present invention is almost similar to the manufacturing method of the first example of the present invention, only parts different from the manufacturing method of the first example of the present invention will be described below. In the manufacturing method of the third example of the present invention, the first protective layer 12 is extended to the edge of the front surface 106, and the first protective layer 12 is extended to cover the back surface 108 (see FIG. 10).

  As shown in FIG. 10, in the manufacturing method of the third example of the present invention, the antireflection layer 16 is formed on the front surface 106, and the first protective layer 12 on the edge of the front surface 106 is covered and extended. Let Similarly, as shown in FIG. 10, in the third exemplary manufacturing method of the present invention, the second protective layer 14 is formed to cover the first protective layer 12.

  Subsequently, in the manufacturing method of the third example of the present invention, at least one back surface bus electrode 18 is formed on the first protective layer 12, and ohmic contact is formed between the at least one back surface bus electrode 18 and the back surface 108. . Referring to FIG. 10, the third exemplary manufacturing method of the present invention causes at least one groove 122 to be formed in the first protective layer 12 covering the back surface 108, and the back surface 108 in the at least one groove 122 is Exposed outside. Next, as shown in FIG. 11, the manufacturing method according to the third example of the present invention covers the back surface 108 exposed to the outside by forming at least one back surface bus electrode 18 in at least one groove 122. Let In the manufacturing method of the third example of the present invention, the groove 122 is not formed, and the glass powder in the silver paste penetrates the silicon of the first protective layer 12 and the back surface 108 during the sintering process to form a contact. One back bus electrode 18 and the back surface 108 may form an ohmic contact.

Finally, in the third exemplary manufacturing method of the present invention, the positive electrode 17 is formed on the antireflection layer 16 and an ohmic contact is formed with the front surface 106. The manufacturing method of the third example of the present invention forms at least one back surface bus electrode 18, forms a back contact 19 and covers the first protective layer 12 covering the back surface 108, and forms at least one back surface bus. The electrode 18 is not covered, and the silicon-based photovoltaic element 1 is completed (see FIG. 11). In this preferred embodiment, the third exemplary method of the present invention is such that the glass powder in the silver paste penetrates the antireflective layer 16, the first protective layer 12, and the silicon on the front surface 106 during the sintering process. Thus, contact is formed, and ohmic contact is formed by the positive electrode 17 and the front surface 106. In another preferred embodiment, in the method of the third example of the present invention, a groove is formed by the antireflection layer 16 and the first protective layer 12, and the front surface 106 in the groove is exposed to the outside. The positive electrode 17 is formed in the groove and covers the front surface 106 exposed to the outside.
[Example 4]

  FIGS. 12 and 13 illustrate a method and structure for manufacturing a silicon-based photovoltaic device according to the fourth example of the present invention by using schematic cross-sectional views.

  Since the manufacturing method of the fourth example of the present invention is almost similar to the manufacturing method of the first example of the present invention, only parts different from the manufacturing method of the first example of the present invention will be described below. In the manufacturing method of the fourth example of the present invention, the first protective layer 12 is extended to cover the front surface 106, and the first protective layer 12 is extended to cover the back surface 108 (FIG. 12). reference).

  Similarly, as shown in FIG. 12, the manufacturing method according to the fourth example of the present invention covers the first protective layer 12 on which the antireflection layer 16 is formed and covers the front surface 106. Similarly, as illustrated in FIG. 12, in the manufacturing method of the fourth example of the present invention, the second protective layer 14 is formed to cover the first protective layer 12.

  Subsequently, in the manufacturing method of the fourth example of the present invention, at least one back surface bus electrode 18 is formed on the first protective layer 12, and at least one back surface bus electrode 18 and the back surface 108 form ohmic contact. The For example, in the manufacturing method of the fourth example of the present invention shown in FIG. 12, at least one groove 122 is formed in the first protective layer 12 covering the back surface 108, and the back surface in the at least one groove 122 is formed. 108 is exposed to the outside. Next, in the manufacturing method of the fourth example of the present invention, at least one back surface bus electrode 18 is formed in at least one groove portion 122 to cover the back surface 108 exposed outside. In the manufacturing method of the fourth example of the present invention, the groove 122 is not formed, and the glass powder in the silver paste penetrates the silicon of the first protective layer 12 and the back surface 108 during the sintering process to form a contact. The ohmic contact may be formed by the at least one back surface bus electrode 18 and the back surface 108 (see FIG. 13).

  As shown in FIG. 13, finally, according to the manufacturing method of the fourth example of the present invention, the positive electrode 17 is formed on the antireflection layer 16 to form an ohmic contact with the front surface 106. In the manufacturing method of the fourth example of the present invention, at least one back surface bus electrode 18 is formed, a back contact 19 is formed and the first protective layer 12 covering the back surface 108 is coated, and at least one back surface bus electrode is formed. 18 is not coated, completing the silicon-based photovoltaic element 1. In a preferred embodiment, the fourth exemplary method of the present invention is such that the glass powder in the silver paste penetrates the antireflective layer 16, the first protective layer 12, and the silicon on the front surface 106 during the sintering process. A contact is formed and an ohmic contact is formed by the positive electrode 17 and the front surface 106. In another preferred embodiment, according to the method of the fourth example of the present invention, a groove is formed in the antireflection layer 16 and the first protective layer 12, and the front surface 106 in the groove is exposed to the outside. The positive electrode 17 is formed in the groove and covers the front surface 106 exposed to the outside.

The following are examples of PID measurement results for several A silicon based photovoltaic elements, several B silicon based photovoltaic elements, and several C silicon based photovoltaic elements. The A silicon-based photovoltaic device is a silicon crystal photovoltaic device manufactured by the method of the third example of the present invention, and the structure is shown in FIG. The B silicon-based photovoltaic device achieves suppression of the PID effect by adjusting the refractive index of the SiN _X antireflection layer by conventional techniques. C silicon-based photovoltaic elements are designed not to suppress the PID effect by typical silicon-based photovoltaic elements. The PID measurement method employed in the present invention performs PID measurement on an installation module on which a silicon-based photovoltaic element is installed. The measurement conditions are a temperature of 85 ° C., a humidity of 85% RH, and a measurement time of 96 hours. .

Table 1 shows A silicon-based photovoltaic elements, B silicon-based photovoltaic elements, and C silicon-based photovoltaic elements, and also shows initial photoelectric conversion efficiency after PID measurement, photoelectric conversion efficiency after measurement, and attenuation. Displays the rate and shunt resistance (Rshunt). The definition of shunt resistance is the magnitude of the leakage of a silicon-based photovoltaic element, that is, the leakage is reduced when the shunt resistance is large. The data in Table 1 proves that the photoelectric conversion efficiencies of the A silicon-based photovoltaic element and the B silicon-based photovoltaic element are all higher than those of the C silicon-based photovoltaic element, and all effectively suppress the PID effect. To do. The attenuation width of C silicon-based photovoltaic elements is very large and the shunt resistance is very low. The B silicon-based photovoltaic element sacrifices the effect of the antireflection layer itself, the photoelectric conversion efficiency of the B silicon-based photovoltaic element is lower than the photoelectric conversion efficiency of the A silicon-based photovoltaic element, and the attenuation rate is A silicon-based It is higher than the attenuation factor of the photovoltaic element, and the shunt resistance is lower than that of the A silicon-based photovoltaic element. The effect of the photovoltaic element of the present invention to suppress the PID effect is clearly superior to that of the conventional technique. Furthermore, the photovoltaic device and the manufacturing method thereof of the present invention can be widely applied to various types of photovoltaic devices.

As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.
In addition, according to embodiment described in this-application specification, the following structures are also disclosed.
[Item 1]
A group having a plurality of side surfaces and comprising a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction A combination of semiconductor configurations including any one junction selected from:
A photovoltaic device comprising a first protective layer formed by covering the plurality of side surfaces and for suppressing an induced potential attenuation effect generated by the photovoltaic device.
[Item 2]
Item 1 is characterized in that the configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds. The photovoltaic element as described in.
[Item 3]
A second protective layer formed by covering the first protective layer, wherein the second protective layer has any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above-mentioned compounds; The photovoltaic element according to item 2, wherein the photovoltaic element is selected from the group consisting of:
[Item 4]
The combination of the semiconductor configurations further includes a front surface and a back surface with respect to the front surface, the front surface is subjected to a roughening treatment, and the first protective layer extends to the edge of the front surface. Extended to the edge of the back surface,
The photovoltaic element is
An antireflection layer formed on the surface of the front surface and extending by covering the first protective layer on the edge of the front surface of the front surface;
A positive electrode formed on the antireflective layer and forming an ohmic contact with the front surface;
At least one back surface bus electrode formed on the back surface;
4. The photovoltaic device according to item 2 or 3, further comprising a back contact formed on the back surface and covering the back surface to form a region other than the at least one back bus electrode. Electric element.
[Item 5]
The combination of the semiconductor configurations further includes a front surface and a back surface with respect to the front surface, the front surface is roughened, and the first protective layer covers the front surface. Extended to the edge of the back surface,
The photovoltaic element is
An antireflection layer formed by covering the first protective layer covering the front surface;
A positive electrode formed on the antireflective layer and forming an ohmic contact with the front surface;
At least one back surface bus electrode formed on the back surface;
Any one of items 2 to 4, further comprising a back contact formed on the back surface and covering the back surface to form a region other than the at least one back bus electrode. The photovoltaic element as described in.
[Item 6]
The combination of the semiconductor configurations further includes a front surface and a back surface with respect to the front surface, the front surface is subjected to a roughening treatment, and the first protective layer extends to the edge of the front surface. Extended and covered with the back surface,
The photovoltaic element is
An antireflection layer formed on the surface of the front surface and extending by covering the first protective layer on the edge of the front surface of the front surface;
A positive electrode formed on the antireflective layer and forming an ohmic contact with the front surface;
At least one backside bus electrode formed on the first protective layer and forming an ohmic contact with the backside surface;
The photovoltaic device according to any one of items 2 to 5, further comprising a back contact formed by covering the first protective layer and not covering the at least one backside bus electrode.
[Item 7]
The combination of the semiconductor configurations further includes a front surface and a back surface with respect to the front surface, the front surface is roughened, and the first protective layer covers the front surface. Extending and covering the back surface, and the photovoltaic element is
An antireflection layer formed by coating the first protective layer covering the surface of the front surface;
A positive electrode formed on the antireflective layer and forming an ohmic contact with the front surface;
At least one backside bus electrode formed on the first protective layer and forming an ohmic contact with the backside surface;
The photovoltaic device according to any one of items 2 to 6, further comprising a back contact formed by covering the first protective layer and not covering the at least one backside bus electrode.
[Item 8]
The combination of semiconductor configurations has multiple side surfaces and includes a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction. A step of preparing a combination of semiconductor configurations, comprising any one junction selected from the group to be configured;
A method of manufacturing a photovoltaic device, comprising: forming a first protective layer that covers the plurality of side surfaces and suppresses an induced potential attenuation effect generated by the photovoltaic device.
[Item 9]
Item 8 is characterized in that the configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds. The manufacturing method of the photovoltaic element of description.
[Item 10]
Coating the first protective layer and forming a second protective layer selected from any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above compounds 10. The method for producing a photovoltaic element according to item 9, comprising:
[Item 11]
The combination of semiconductor configurations further comprises a front surface and a back surface to the front surface, and
Applying a roughening treatment to the surface of the table;
Extending the first protective layer to the edge of the front surface and extending the first protective layer to the edge of the back surface;
Forming an antireflection layer on the front surface, covering and extending the first protective layer on the edge of the front surface; and
Forming a positive electrode on the antireflection layer and forming an ohmic contact with the positive electrode and the front surface;
Forming at least one backside bus electrode on the backside surface;
Item 11. The light according to item 9 or 10, further comprising a step of forming a back contact on the back surface and covering the back surface to form a region other than the at least one backside bus electrode. Manufacturing method of electromotive element.
[Item 12]
The combination of semiconductor configurations further comprises a front surface and a back surface to the front surface, and
Applying a roughening treatment to the surface of the table;
Extending the first protective layer to cover the front surface, and extending the first protective layer to the edge of the back surface;
Coating the first protective layer to form an antireflection layer to cover the front surface;
Forming a positive electrode on the antireflection layer and forming an ohmic contact with the positive electrode and the front surface;
Forming at least one backside bus electrode on the backside surface;
Any one of items 9 to 11, further comprising a step of forming a back contact on the back surface and covering the back surface to form a region other than the at least one back surface bus electrode. The manufacturing method of the photovoltaic element of description.
[Item 13]
The combination of semiconductor configurations further comprises a front surface and a back surface to the front surface, and
Applying a roughening treatment to the surface of the table;
Extending the first protective layer to the edge of the front surface, and extending the first protective layer to cover the back surface;
Forming an antireflection layer on the front surface, covering and extending the first protective layer on the edge of the front surface; and
Forming a positive electrode on the antireflection layer and forming an ohmic contact with the positive electrode and the front surface;
Forming at least one backside bus electrode on the first protective layer and forming an ohmic contact with the at least one backside bus electrode and the back surface;
13. The photovoltaic device of any one of items 9 to 12, further comprising the step of forming a back contact to cover the first protective layer and not to cover the at least one backside bus electrode. Device manufacturing method.
[Item 14]
The combination of semiconductor configurations further comprises a front surface and a back surface relative to the front surface;
Applying a roughening treatment to the surface of the table;
Extending the first protective layer to cover the front surface, and extending the first protective layer to cover the back surface;
Coating the first protective layer to form an antireflection layer to cover the front surface;
Forming a positive electrode on the antireflection layer and forming an ohmic contact with the positive electrode and the front surface;
Forming at least one backside bus electrode on the first protective layer and forming an ohmic contact with the at least one backside bus electrode and the back surface;
14. The photovoltaic device of any one of items 9 to 13, further comprising a step of forming a back contact to cover the first protective layer and not to cover the at least one backside bus electrode. Device manufacturing method.

DESCRIPTION OF SYMBOLS 1 Photovoltaic element 10 Combination of semiconductor structure 101 Silicon base material 102 Side surface 103 Semiconductor region 104 Joint part 106 Front surface 108 Back surface 12 First protective layer 122 Groove part 14 Second protective layer 16 Antireflection layer 17 Positive electrode 18 Back bus electrode 19 Back contact

Claims (8)

A group having a plurality of side surfaces and comprising a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction A combination of semiconductor configurations including any one junction selected from:
A first protective layer formed by covering the plurality of side surfaces and for suppressing an evoked potential attenuation effect generated by the photovoltaic element;
The combination of the semiconductor configurations further includes a front surface and a back surface with respect to the front surface, the front surface is subjected to a roughening treatment, and the first protective layer extends to the edge of the front surface. Extended to the edge of the back surface,
The photovoltaic element is
An antireflection layer that is formed in contact with the surface of the table and extends to cover the first protective layer on the edge of the surface of the table;
A positive electrode formed on the antireflective layer and forming an ohmic contact with the front surface;
At least one back surface bus electrode formed on the back surface;
A back contact formed on the back surface and covering the back surface to form a region other than the at least one back surface bus electrode;
The configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds ,
A second protective layer formed by covering the first protective layer, wherein the second protective layer has any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above-mentioned compounds; photovoltaic element characterized Rukoto selected either from one. A group having a plurality of side surfaces and comprising a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction A combination of semiconductor configurations including any one junction selected from:
A first protective layer formed by covering the plurality of side surfaces and for suppressing an evoked potential attenuation effect generated by the photovoltaic element;
The combination of the semiconductor configurations further includes a front surface and a back surface with respect to the front surface, the front surface is roughened, and the first protective layer covers the front surface. Extended to the edge of the back surface,
The photovoltaic element is
An antireflection layer formed by covering the first protective layer covering the front surface;
A positive electrode formed on the antireflective layer and forming an ohmic contact with the front surface;
At least one back surface bus electrode formed on the back surface;
A back contact formed on the back surface and covering the back surface to form a region other than the at least one back surface bus electrode;
The configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds ,
A second protective layer formed by covering the first protective layer, wherein the second protective layer has any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above-mentioned compounds; photovoltaic element characterized Rukoto selected either from one. A group having a plurality of side surfaces and comprising a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction A combination of semiconductor configurations including any one junction selected from:
A first protective layer formed by covering the plurality of side surfaces and for suppressing an evoked potential attenuation effect generated by the photovoltaic element;
The combination of the semiconductor configurations further includes a front surface and a back surface with respect to the front surface, the front surface is subjected to a roughening treatment, and the first protective layer extends to the edge of the front surface. Extended and covered with the back surface,
The photovoltaic element is
An antireflection layer formed on the surface of the front surface and extending by covering the first protective layer on the edge of the front surface of the front surface;
A positive electrode formed on the antireflective layer and forming an ohmic contact with the front surface;
At least one backside bus electrode formed on the first protective layer and forming an ohmic contact with the backside surface;
A back contact formed by covering the first protective layer and not covering the at least one backside bus electrode;
The configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds ,
A second protective layer formed by covering the first protective layer, wherein the second protective layer has any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above-mentioned compounds; photovoltaic element characterized Rukoto selected either from one. A group having a plurality of side surfaces and comprising a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction A combination of semiconductor configurations including any one junction selected from:
A first protective layer formed by covering the plurality of side surfaces and for suppressing an evoked potential attenuation effect generated by the photovoltaic element;
The combination of the semiconductor configurations further includes a front surface and a back surface with respect to the front surface, the front surface is roughened, and the first protective layer covers the front surface. Extending and covering the back surface, and the photovoltaic element is
An antireflection layer formed by coating the first protective layer covering the surface of the front surface;
A positive electrode formed on the antireflective layer and forming an ohmic contact with the front surface;
At least one backside bus electrode formed on the first protective layer and forming an ohmic contact with the backside surface;
A back contact formed by covering the first protective layer and not covering the at least one backside bus electrode;
The configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds ,
A second protective layer formed by covering the first protective layer, wherein the second protective layer has any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above-mentioned compounds; photovoltaic element characterized Rukoto selected either from one. The combination of semiconductor configurations has multiple side surfaces and includes a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction. A step of preparing a combination of semiconductor configurations, comprising any one junction selected from the group to be configured;
Forming a first protective layer that covers the plurality of side surfaces and suppresses the evoked potential decay effect generated by the photovoltaic element;
The combination of semiconductor configurations further comprises a front surface and a back surface to the front surface, and
Applying a roughening treatment to the surface of the table;
Extending the first protective layer to the edge of the front surface and extending the first protective layer to the edge of the back surface;
Forming an antireflection layer in contact with the surface of the front surface, covering and extending the first protective layer on the edge of the front surface of the front surface; and
Forming a positive electrode on the antireflection layer and forming an ohmic contact with the positive electrode and the front surface;
Forming at least one backside bus electrode on the backside surface;
A step of forming a back contact on the back surface and covering the back surface to form a region other than the at least one back surface bus electrode;
The configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds ,
The method further includes the step of covering the first protective layer and forming a second protective layer selected from any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above compounds. method of manufacturing a photovoltaic element characterized and this. The combination of semiconductor configurations has multiple side surfaces and includes a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction. A step of preparing a combination of semiconductor configurations, comprising any one junction selected from the group to be configured;
Forming a first protective layer that covers the plurality of side surfaces and suppresses the evoked potential decay effect generated by the photovoltaic element;
The combination of semiconductor configurations further comprises a front surface and a back surface to the front surface, and
Applying a roughening treatment to the surface of the table;
Extending the first protective layer to cover the front surface, and extending the first protective layer to the edge of the back surface;
Coating the first protective layer to form an antireflection layer to cover the front surface;
Forming a positive electrode on the antireflection layer and forming an ohmic contact with the positive electrode and the front surface;
Forming at least one backside bus electrode on the backside surface;
A step of forming a back contact on the back surface and covering the back surface to form a region other than the at least one back surface bus electrode;
The configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds ,
The method further includes the step of covering the first protective layer and forming a second protective layer selected from any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above compounds. method of manufacturing a photovoltaic element characterized and this. The combination of semiconductor configurations has multiple side surfaces and includes a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction. A step of preparing a combination of semiconductor configurations, comprising any one junction selected from the group to be configured;
Forming a first protective layer that covers the plurality of side surfaces and suppresses the evoked potential decay effect generated by the photovoltaic element;
The combination of semiconductor configurations further comprises a front surface and a back surface to the front surface, and
Applying a roughening treatment to the surface of the table;
Extending the first protective layer to the edge of the front surface, and extending the first protective layer to cover the back surface;
Forming an antireflection layer on the front surface, covering and extending the first protective layer on the edge of the front surface; and
Forming a positive electrode on the antireflection layer and forming an ohmic contact with the positive electrode and the front surface;
Forming at least one backside bus electrode on the first protective layer and forming an ohmic contact with the at least one backside bus electrode and the back surface;
Forming a back contact to cover the first protective layer and not to cover the at least one backside bus electrode;
The configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds ,
The method further includes the step of covering the first protective layer and forming a second protective layer selected from any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above compounds. method of manufacturing a photovoltaic element characterized and this. The combination of semiconductor configurations has multiple side surfaces and includes a pn junction, an np junction, a pin junction, an nip junction, a double junction, and a multiple junction. A step of preparing a combination of semiconductor configurations, comprising any one junction selected from the group to be configured;
Forming a first protective layer that covers the plurality of side surfaces and suppresses the evoked potential decay effect generated by the photovoltaic element;
The combination of semiconductor configurations further comprises a front surface and a back surface relative to the front surface;
Applying a roughening treatment to the surface of the table;
Extending the first protective layer to cover the front surface, and extending the first protective layer to cover the back surface;
Coating the first protective layer to form an antireflection layer to cover the front surface;
Forming a positive electrode on the antireflection layer and forming an ohmic contact with the positive electrode and the front surface;
Forming at least one backside bus electrode on the first protective layer and forming an ohmic contact with the at least one backside bus electrode and the back surface;
Forming a back contact to cover the first protective layer and not to cover the at least one backside bus electrode;
The configuration of the first protective layer is selected from any one of the group consisting of aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, and a mixture of the above compounds ,
The method further includes the step of covering the first protective layer and forming a second protective layer selected from any one of the group consisting of silicon nitride, silicon oxynitride, and a mixture of the above compounds. method of manufacturing a photovoltaic element characterized and this.

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