JP5917731B2 - Evaporation mask - Google Patents

Description

  The present invention relates to a vapor deposition apparatus, and specifically relates to a vapor deposition mask used in a manufacturing process of a display device.

  An organic light emitting diode (hereinafter referred to as OLED) is also called an organic EL display device, and has excellent characteristics such as ultra-thin, high brightness, high luminous efficiency, high reaction speed, and wide viewing angle. Moreover, since it emits light, it does not require a backlight. The OLED has an organic layer placed between the cathode and the anode. OLEDs can emit energy as light using the properties of organic materials. In brief, the OLED has an organic light emitting layer. Moreover, OLED can emit various light according to the kind of organic material, and its combination.

  During the manufacturing process of the OLED, a film can be formed using a method such as a vapor deposition method, a liquid deposition method, a coating method, or an electroplating method. The organic film layer is formed by a combination of a vacuum vapor deposition method and a method of defining a film formation region with a mask. As shown in FIGS. 1A to 1C, the conventional mask 90 is formed by placing an upper sheet body 820 on a lower sheet body 810. Further, a frame body 900 is installed on the upper sheet body 820 and the lower sheet body 810. In the base material S, a film formation region M is configured by being surrounded by the upper sheet body 820 and the lower sheet body 810. Each time the vapor deposition process is completed, the mask 90 is cleaned (for example, chemical immersion, chemical spray, and / or cleaning by a cleaning device) to remove the vapor deposition material attached to the mask 90, and the cleaned mask 90 is dried. Prepare for the next deposition.

  However, since the upper sheet body 820 and the lower sheet body 810 formed over each other are independent members, a minute gap g is formed in the overlapping portion A between the both when they are not adhered or welded. Is done. Although the chemical liquid may flow into the gap g during the cleaning of the mask 90, the area of the overlapping portion is large in the overlapping portion A and the gap g is narrow, so that it is difficult to ensure sufficient cleaning. Furthermore, since it is difficult to ensure that the chemical solution flowing into the gap g and the substance attached to the chemical solution pass through the gap g, it is difficult to remove from the mask 90 after cleaning (that is, the gap g and the mask 90). Will remain). For this reason, there is a possibility that the film forming material may remain excessively in the overlapping portion A and the gap g between the upper sheet body 820 and the lower sheet body 810 even after cleaning. Further, chemical components may also remain in the mask 90. These residues can become contaminants, reducing the durability of the mask 90 and being released during the vapor deposition process, which can adversely affect the quality of the manufacturing process, thus affecting product yield. .

  Accordingly, one object of the present invention is to provide a vapor deposition mask that can be easily cleaned.

  Another object of the present invention is to provide a vapor deposition mask that has a high utilization rate and contributes to an improvement in the yield of vapor deposition products.

In order to achieve the above object, the vapor deposition mask of the present invention is used in a vapor deposition process using a vapor deposition source, and includes a first main body and a second main body. The first body has a first overlapping region in which a plurality of first through holes are formed. The second body has a second overlapping region in which a plurality of second through holes are formed, and extends in a direction different from that of the first body. If superposition of the first overlapping region and the second overlapping region, the projection range of the first through-hole in the second overlapping region, outside near the second through-hole is, wherein the first overlapping region second between the overlapping region, the first through-hole and a second through-hole is a gap respectively communicating Ru formed.

In the vapor deposition mask according to the present invention, the first main body and the second main body are provided to overlap each other. When the first main body and the second main body are provided so as to overlap each other , a gap is formed between the main bodies in the overlapping portion, and a hole is formed by the first through hole and the second through hole.

In the vapor deposition mask according to the present invention, a first through hole and a second through hole are formed in the first main body and the second main body, respectively, and the first main body and the second main body are provided to overlap each other. When the first main body and the second main body are provided so as to overlap each other , a gap is formed between the main bodies, and the portions where the first through hole and the second through hole are formed overlap each other. The projection range of the first through hole in the second main body is outside the range of the second through hole.

  According to the vapor deposition mask of the present invention, an excellent cleaning effect can be obtained, and the vapor deposition process can be restarted quickly to improve the yield of finished products.

It is an exploded view of the conventional vapor deposition mask. It is a top view of the conventional vapor deposition mask. It is a side view of the conventional vapor deposition mask. It is an exploded view of the vapor deposition mask which concerns on 1st Embodiment of this invention. It is an exploded view of the vapor deposition mask which concerns on 1st Embodiment of this invention. It is a perspective view of the vapor deposition mask which concerns on 1st Embodiment of this invention. It is a top view of the vapor deposition mask which concerns on 1st Embodiment of this invention. It is sectional drawing of the AA line of FIG. 3B. It is the schematic which shows the flow of the liquid in the vapor deposition mask which concerns on 1st Embodiment of this invention. It is a figure which shows the vapor deposition mask which concerns on 2nd Embodiment of this invention. It is a figure which shows the vapor deposition mask which concerns on 3rd Embodiment of this invention. It is sectional drawing of the BB line of FIG. 5, and the CC line of FIG. It is a figure which shows the vapor deposition mask which concerns on 4th Embodiment of this invention. It is sectional drawing of the DD line | wire of FIG. 8A. It is a figure explaining the usage example of the vapor deposition mask which concerns on 1st-4th embodiment of this invention. It is a figure explaining the usage example of the vapor deposition mask which concerns on 1st-4th embodiment of this invention. It is an exploded view of the vapor deposition mask which concerns on 5th Embodiment of this invention. It is a figure explaining the usage example of the vapor deposition mask shown by FIG.

  The vapor deposition mask which concerns on this invention is used for the vapor deposition process which uses a vapor deposition source. By the vapor deposition step, for example, a film layer can be formed on the surface of the substrate. Preferably, the vapor deposition mask according to the present invention is an organic EL display device (Organic Light Emitting Display, OLED) or an organic light emitting diode (Organic Light Emitting Diode) in a film forming process or a vapor deposition process, and an organic light emitting device is formed on a specific region of the substrate. This specific area may be, for example, a display area in a display panel or an area in which pixels are formed, and is emitted from a deposition source toward the substrate. The vapor deposition material such as vaporized organic molecules passes through a vapor deposition mask to form a patterned organic light emitting layer or a limited area organic light emitting layer on the substrate.

  Each time the deposition process is completed, the deposition mask is cleaned (for example, cleaning is performed with a cleaning facility) to remove the deposition material attached to the deposition mask, and the cleaned deposition mask is dried to prepare for the next deposition process. . The vapor deposition mask according to the present invention has an excellent cleaning effect due to its own structure.

  The vapor deposition mask 10 according to the first embodiment shown in FIG. 2A includes a first main body 100 and a second main body 200. The first main body 100 has a first overlapping region 150. The second main body 200 has a second overlapping region 250. A plurality of first through holes 180 are formed in the first overlapping region 150. A plurality of second through holes 280 are formed in the second overlapping region 250. In the present embodiment, the first main body 100 and the second main body 200 are arranged extending in different directions, and it is preferable that both are long metal sheets. A plurality of first through holes 180 or a plurality of second through holes 280 are formed on these metal sheets. Therefore, the first overlapping region 150 may be a region where the plurality of first through holes 180 are formed in the first main body 100 that is a metal sheet, and the second overlapping region 250 is a first that is a metal sheet. The two main bodies 200 may be a region where a plurality of second through holes 280 are formed. The plurality of first through holes 180 or the plurality of second through holes 280 are preferably formed concentrated on the first main body 100 or the second main body 200. Further, the plurality of first through holes 180 or the plurality of second through holes 280 are formed concentrated on one or more regions of the first main body 100 or the second main body 200 to form one or more first overlapping regions. Preferably, 150 or the second overlapping region 250 is formed. The first main body 100 has at least one first overlapping region 150 that overlaps at least one second overlapping region 250 of the second main body 200 when overlapped with the second main body 200.

  On the other hand, the through-hole size of the first through-hole 180 or the second through-hole 280 can be said to be an opening area. It can be said that the total opening area of the plurality of first through holes 180 or the plurality of second through holes 280 is the total opening area. The total opening area is determined by the through hole size, the number and shape of the through holes.

  As shown in FIG. 3A, it is preferable that the first body 100 and the second body 200 overlapped in the vapor deposition mask 10 extend in different directions to form a geometric range. For example, two first main bodies 100 extending in the same direction with a space between each other and two second main bodies 200 extending in the same direction with a space between each other and perpendicular to the first main body 100 are rectangular frame bodies. By doing so, a rectangular region is surrounded. Alternatively, as shown in FIG. 3A, two first bodies 100 extending in the same direction and spaced from each other, and three second bodies 200 spaced from each other and perpendicular to the first body 100, A rectangular area is surrounded. At the time of vapor deposition, the exposed portion of the substrate corresponds to a region surrounded by the frame. In other words, a film forming region of the base material is defined by the frame body, and a vapor deposition material is deposited on the film forming region. As shown in FIG. 3A, when the first main body 100 and the second main body 200 are overlapped, the first overlapping region 150 preferably overlaps the second overlapping region. In this case, when the first main body 100 and the second main body 200 are overlapped and the first overlap region 150 and the second overlap region overlap, the projection of the first through hole 180 in the second overlap region 250 is the second The projection of the second through-hole 280 in the first overlapping region 150 is located outside the range of the first through-hole 180 and located outside the range of the through-hole 280. In other words, the first through-hole 180 and the second through-hole 280 are formed so as to be displaced from each other in the overlapping portion of the first main body 100 and the second main body 200 (that is, the overlapping region 150/250). Thus, even when the first overlapping region 150 overlaps with the second overlapping region, the first through hole 180 and the second through hole 280 do not directly communicate with each other. That is, since the first through hole 180 is shielded by the second main body 200 and the second through hole 280 is shielded by the first main body 100, the through holes penetrating the opposite surfaces of the overlapping region 150/250. Does not exist in the overlapping portion.

  As shown in FIGS. 2B and 3A to 3C, a plurality of first through holes 180 are formed in the first overlapping region 150 of the first body 100 so as to be spaced apart from each other. A plurality of second through holes 280 are formed in the space 250 at intervals. In addition, the plurality of second through holes 280 and the plurality of first through holes 180 are displaced. The amount of displacement (position displacement distance) between the first through hole 180 and the second through hole 280 is preferably larger than the hole diameter of the first through hole 180 or the hole diameter of the second through hole 280. As shown in FIG. 3C, the positional deviation distance D between adjacent through holes, for example, the first through hole 180 and the second through hole 280 adjacent to each other is determined by the hole diameter d of the first through hole 180 or the second through hole 280. Is also big. Here, the distance D is the first through hole 180 (or the second through hole 280) and the second through hole 280 (or the first through hole 280) closest to the first through hole 180 (or the second through hole 280). This corresponds to the distance to the through hole 180). Specifically, the distance D is, for example, the distance from the center of the first through hole 180 to the center of the second through hole 280 adjacent to the first through hole 180, or the left edge of the first through hole 180. To the left edge of the second through hole 280 adjacent to the first through hole 180. Furthermore, in the overlapping region 150/250 of the first overlapping region 150 and the second overlapping region 250, the first through hole 180 and the second through hole 280 are misaligned, and in addition, in the second overlapping region 250, The projection range of the first through hole 180 is between the adjacent second through holes 280, and the projection range of the second through hole 280 in the first overlapping region 150 is between the adjacent first through holes 180. In addition, it is preferable that the projection range of the first through hole 180 in the second overlapping region 250 does not overlap the range of the second through hole 280 by making the positional deviation distance D larger than the hole diameter d. As shown in FIG. 3C, which is a cross-sectional view taken along line AA in FIGS. 3B and 3B, for example, when the vapor deposition mask 10 is viewed from above, the vapor deposition mask in which the second main body 200 is positioned above the first main body 100, for example. When 10 is viewed from above, the second through hole 280 in the second overlapping region 250 is visible, and further, the first main body 100 located below the second through hole 280 is also visible. There are first through holes 180 on both sides of the first body 100 exposed by the second through holes 280. The first through hole 180 (shown by a dotted line in the enlarged view in FIG. 3B) is shielded by the second main body 200. Conversely, when the vapor deposition mask 10 is viewed from below, the first through hole 180 in the first overlapping region 150 can be seen, and further, the second main body 200 located above the first through hole 180 can also be seen.

  As illustrated in FIGS. 2B and 3A to 3C, in the stage of designing the deposition mask 10, the first overlapping region 150, the second overlapping region 250, and the overlapping region 150 of the first overlapping region and the second overlapping region. / 250 is designed in a substantially square shape. At the time of design, as shown in FIG. 2B, the overlap area 150/250 is partitioned into 25 square areas. In these rectangular regions, the first through holes 180 and the second through holes 280 are alternately formed in the first overlapping region 150 and the second overlapping region 250. For example, the first through holes 180 are formed in odd-numbered square regions (for example, the first, third, and fifth in the first column or first row of the first overlapping region 150), and the even-numbered squares are formed. By forming the second through holes 280 in the region (for example, the second column or the fourth column in the first column or the first row of the second overlapping region 250), the first through hole 180 and the second through hole 280 are formed. Are alternately formed in the overlapping regions 150/250 of the first overlapping region and the second overlapping region. Here, the first column or first row in the first overlapping region 150 corresponds to the first column or first row in the second overlapping region 250. When the first main body 100 and the second main body 200 are overlapped and the first overlap region 150 and the second overlap region 250 are overlapped with each other, the first column (or first row) in the first overlap region 150 is , Located above or below the first column (or first row) in the second overlap region 250. In other words, the first through hole 180 other than the first through hole 180 installed at the edge (or the projection range of the first through hole 180 in the second overlapping region) is surrounded by the plurality of second through holes 280. . In the opposite case, the second through hole 280 other than the second through hole 280 installed at the edge (or the projection range of the second through hole 280 in the first overlapping region) is surrounded by the plurality of first through holes 180. It is.

  Furthermore, a gap G is formed between the first overlapping region 150 and the second overlapping region 250 in the first main body and the second main body that are overlapped. As shown in FIG. 2B and FIGS. 3A to 3B, the gap G may be formed naturally without adhesion or welding, for example, when the first main body 100 and the second main body 200 are stacked. A minute gap is preferable. The first through hole 180 and the second through hole 280 are communicated with each other through a gap G. As described above, when there is a liquid on one surface of the first main body 100 or the second main body 200, the liquid infiltrates the first through hole 180 or the second through hole 280 and passes through the gap G by capillary action. The first body 100 or the second body 200 reaches the other surface, that is, flows from the first body 100 to the second body 200 and the second through-hole 280, or from the second body 200 to the first body 100 and the first body 200. It flows to the through hole 180. In other words, the vapor deposition mask according to the present embodiment has a structure of itself, for example, the first main body 100 and the second main body 200, and the liquid flow and the overlapping portion of the first main body 100 and the second main body 200. Promote its distribution. As shown in FIG. 4, when the liquid is a detergent, according to the structure of the vapor deposition mask according to the present embodiment, the detergent flows to the overlapping portion of the first main body 100 and the second main body 200, so that excellent cleaning can be performed. In addition, the detergent is discharged from the first through-hole 180 or the second through-hole 280 by the arrangement of the first through-hole 180 and the second through-hole 280, thereby preventing the detergent from remaining in the gap G. You can also In addition, the vapor deposition mask according to the present embodiment can improve the usage rate because the drying time is shortened due to the permeability of the liquid and vapor deposition material in the overlapping region even after cleaning.

  In other embodiments, the first through hole 180 or the second through hole 280 may have other shapes such as a rectangle and a circle. The shape of the through hole may be determined by the efficiency of the molding. For example, when it is easy to form the through hole into a circle, a circle is selected as the shape of the first through hole 180 and / or the second through hole 280. Further, the (total) opening area of the first through hole 180 or the second through hole 280 may be changed. In the second embodiment shown in FIG. 5, a rectangular first through hole 180a and a rectangular second through hole 280a are formed in the first main body 100a and the second main body 200a so as to be displaced. In this case, the opening area of the 1st through-hole 180a or the 2nd through-hole 280a differs from said embodiment by the shape and its distribution form of a through-hole. In the third embodiment shown in FIG. 6, circular first through holes 180b and circular second through holes 280b are alternately formed in the first main body 100b and the second main body 200b. In this case, the opening area of the 1st through-hole 180b or the 2nd through-hole 280b differs from said embodiment by the shape and its distribution form of a through-hole. Compared to the embodiment shown in FIGS. 5 to 7, in the first embodiment shown in FIGS. 3B to 3C, the opening areas of the first through hole 180 and the second through hole 280 are large, and the overlapping region 150 / The total opening area of 250 holes (consisting of a first through hole and a second through hole) is also large. In the first embodiment shown in FIGS. 3B to 3C, for example, the lengths and widths of the openings of the first through hole 180 and the second through hole 280 may be 5 units, respectively. Conversely, in the embodiment shown in FIGS. 5 to 7 (refer to FIG. 7 which is a cross-sectional view of FIGS. 5 and 6 at the same time) as compared to the first embodiment shown in FIGS. The first through hole 180a or the first through hole 180b in the region 150 and the second through hole 280a or the second through hole 280b in the second overlapping region 250 are the first through hole 180 and the second through hole 180 shown in FIGS. 3B to 3C. The opening area is smaller than that of the second through hole 280, and the total opening area of the holes of the overlapping region 150/250 (consisting of the first through hole and the second through hole) is smaller. In the embodiment shown in FIGS. 5 to 7, for example, the opening lengths of the first through hole 180 and the second through hole 280 may be 6 units, and the opening width may be 4 units. In general, the larger the total opening area of the overlapping region 150/250, the smaller the area of the overlapping portion between the first body and the second body in the overlapping region 150/250. In principle, the large total opening area and the small overlapping area have excellent liquid permeability (for example, excellent liquid permeability in the overlapping region 150/250). The total of the total opening area of the first through holes 180 and the total opening area of the second through holes 280 is preferably smaller than 90% of the area of the first overlapping region 150 or the area of the second overlapping region 250.

  In another embodiment, the opening area or the total opening area of the first through hole may be different from the opening area or the total opening area of the second through hole. In the fourth embodiment shown in FIGS. 8A and 8B, the opening area of the first through hole 180c is smaller than the opening area of the second through hole 280c. Here, the through hole size or (total) opening area of the first through hole and / or the second through hole is the positional relationship between the vapor deposition mask 10 and the vapor deposition source, for example, from the first main body and the second main body to the vapor deposition source. May be designed according to the distance of the deposition mask, may be designed according to the cleaning mode of the deposition mask and / or the cleaning mode of the cleaning equipment, or may be designed in consideration of all the above factors. For example, the through-hole size or (total) opening area of the first through-hole 180 of the first main body 100 facing the vapor deposition source C is reduced, and preferably the through-hole size or (total) opening area of the first through-hole 180c. Is smaller than the through-hole size or the (total) opening area of the second through-hole 280c. By doing so, it is possible to reduce the deposition material adhering to the second main body and further to the substrate to be deposited during the deposition. 8A and 8B show a configuration in which the first main body 100 is positioned below, but the present invention is not limited to this.

  The first body and the second body of the present invention are preferably connected to a support member. As shown in FIGS. 9A and 9B, the first main body 100 and the second main body 200 may be installed on a support member. By doing so, the extending direction of the first main body 100 and the second main body 200 and the geometric range surrounded by them can be fixed. The support member is preferably a frame body 500. The frame 500 may be provided with a base material to be deposited, for example, a glass substrate S.

  In the embodiment shown in FIGS. 9A and 9B, the two first bodies 100 extend in parallel to the Y-axis direction, and the three second bodies 200 extend in parallel to the X-axis direction. The positions on the Z axis of the two first main bodies 100 and the three second main bodies 200 are different. For example, the second main body 200 is located above the first main body 100 and is provided so as to overlap the two first main bodies 100 located below. Each first main body 100 has three first overlapping regions 150 that overlap with the second overlapping region 250 of each second main body 200. Therefore, the first main body 100 and the second main body 200 form a substantially T-shaped frame and is formed by surrounding two rectangular regions.

  Moreover, although the 1st main body 100, the 2nd main body 200, and the frame 500 are sequentially installed in the Z-axis direction, it is not limited to this. For example, the installation positions of the first main body 100 and the second main body 200 may be switched. The vertical positional relationship among the first main body 100, the second main body 200, and the frame 500 shown in FIGS. 9A and 9B does not limit the relative positions of the three during actual operation. In the present embodiment, the frame body 500 is disposed so as to straddle the edges of the first main body 100 and the second main body 200, and both opposing ends of the first main body 100 or the second main body 200 are arranged on the frame 500. It is connected to opposite sides. Further, the first main body 100 and the second main body 200 may be fixed to the frame body 500 by welding, for example, laser spot welding. Further, the frame body 500 may include a support base (not shown). The board | substrate S is installed on the support stand. Preferably, one surface on which the substrate S is deposited is disposed so as to face the support base, and the first body 100 and the second body 200 are installed on the frame body 500 so as to face one surface on which the substrate S is deposited. And the substrate S is shielded. In other words, the substrate S is interposed between the first main body 100 and the second main body 200 (also referred to as a vapor deposition mask) and the frame body 500. In this case, one of the first main body and the second main body that is separated from the frame 500 is a main body that approaches the vapor deposition source. For example, the first main body 100 is a main body that approaches the vapor deposition source. During vapor deposition, one surface of the first body 100 facing the vapor deposition source and the portion of the second body 200 that faces the vapor deposition source and does not overlap the first body 100, that is, the portion that is not shielded, directly receives the vapor deposition material. .

  For example, the substrate S may be a glass substrate. The glass substrate is installed between the frame 500 and the first main body 100 and the second main body 200 (also referred to as a vapor deposition mask), and is formed by two rectangular regions surrounded by a substantially T-shaped frame. A film formation region is defined. The size of each rectangular region, that is, the film formation region may be, for example, a size of 1850 mm × 1500 mm (that is, G6 size) of a 65-inch panel. After the deposition, two rectangular film layers, for example, organic film layers, are formed on the G6 size finished product.

  In another embodiment, in the vapor deposition chamber, the substrate S can be fixed above the vapor deposition mask, for example, by sucking the non-vapor deposition surface with a suction cup device. Usually, a vapor deposition source is located below a vapor deposition mask, and vapor deposition is performed toward the vapor deposition mask and the board | substrate S. As shown in FIG. The vapor deposition mask may not necessarily be in close contact with the substrate S. In other words, the vapor deposition mask may be arranged at a distance from the substrate S. Since the vapor deposition mask according to the present invention can obtain an excellent cleaning effect in a short time due to its own structure, the vapor deposition process can be resumed quickly to improve the yield of the finished product.

  FIG. 10 is a view showing a vapor deposition mask according to the fifth embodiment of the present invention. The deposition mask 10 n includes a first main body 110 and a second main body 220. The first main body 110 has a first overlapping region 150 in which a plurality of first through holes 180 are formed. The second main body 220 has a second overlapping region 250 in which a plurality of second through holes 280 are formed. Further, an opening 120 for defining a film formation region is further formed in a portion other than the first overlapping region 150 of the first main body 110. In the embodiment shown in FIG. 10, the plurality of openings 120 formed in the first main body 110 occupy a partial region of the first main body 110, for example, arranged according to a certain rule. Furthermore, the size of these openings 120 corresponds to the size of the pixels, and is arranged in a matrix. As shown in FIG. 10, the region of the first main body 110 where the plurality of openings 120 are formed forms a lattice-like structure. Therefore, it is possible to provide a vapor deposition method in which an organic layer corresponding to the pixel is formed on the base material by the configuration in which the film formation region of the first main body 110 is defined.

  Meanwhile, the second main body 220 may have a plurality of second overlapping regions 250. As shown in FIG. 10, these second overlapping regions 250 are arranged along the extending direction of the second main body 220. Alternatively, it can be said that the second body 220 has an overlapping region 250 ′ extending along the extending direction thereof.

  Regarding the use of the first main body 110 and the second main body 220, as shown in FIGS. 10 and 11, the plurality of first main bodies 110 extend parallel to the y-axis direction and are arranged in parallel along the x-axis direction. . Therefore, the first overlapping regions 150 approaching both ends and the center of the first main body 110 are substantially aligned and constitute an overlapping region 150 ′ extending in this parallel direction, that is, the x-axis direction. On the other hand, the second main body 220 has an overlapping region 250 ′ extending in the x-axis direction. A plurality of the first main bodies 110 arranged in parallel are overlapped with the second main body 220, and the overlap region 150 'and the overlap region 250' are overlapped with each other, thereby forming a hole in the overlap region 150 '/ 250'. As described above, according to the above structure, the circulation and distribution of the liquid are promoted in the overlapping portion between the first main body 110 and the second main body 220. When the liquid is a detergent, the vapor deposition mask according to the present invention can obtain an excellent cleaning effect due to its own structure, and can be dried in a short time due to the passage of liquid in the overlapping region after cleaning. Usability can be improved.

  The preferred embodiments of the present invention have been described above, but this does not limit the present invention, and those skilled in the art will add various variations and coloration without departing from the spirit and scope of the present invention. be able to. Accordingly, the scope of the present invention requiring protection is based on the claims.

<Invention>
10, 10n Deposition masks 100, 100a, 100b, 100c, 110 First main body 120 Opening 150 First overlapping region 180, 180a First through hole 200, 200a, 200b, 200c, 220 Second main body 250 Second overlapping region 280, 280a Second through-hole 500 Frame G Gap D Hole diameter d Distance S Substrate C Deposition source <Conventional technology>
820 Upper sheet body 810 Lower sheet body 900 Frame body 90 Mask M Deposition region A Overlapping portion g Gap

Claims (5)

A vapor deposition mask used in a vapor deposition process using a vapor deposition source,
A first body having a first overlapping region in which a plurality of first through holes are formed;
A second body having a second overlapping region in which a plurality of second through holes are formed, and extending in a direction different from the first body,
When the first overlapping region and the second overlapping region are overlapped ,
Projection range of the first through-hole in the second overlapping region, Ri range near the second through-hole,
Wherein between the first overlapping region and the second overlapping region, the deposition mask, characterized in Rukoto gap is formed in which the first through hole and the second through hole communicating respectively.   The deposition mask according to claim 1, wherein the projection range of the first through hole in the second overlapping region is sandwiched between the adjacent second through holes.   The vapor deposition mask according to claim 1, wherein at least one of the first through hole and the second through hole is circular. The first body is closer to the deposition source than the second body;
The evaporation mask according to claim 1, wherein the first through hole has an opening area smaller than that of the second through hole.   The sum of the total opening area of the plurality of first through holes and the total opening area of the plurality of second through holes is smaller than 90% of the area of the first overlapping region. The vapor deposition mask of description.