JP5906513B2 - 光触媒複合材料 - Google Patents
光触媒複合材料 Download PDFInfo
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- JP5906513B2 JP5906513B2 JP2011072534A JP2011072534A JP5906513B2 JP 5906513 B2 JP5906513 B2 JP 5906513B2 JP 2011072534 A JP2011072534 A JP 2011072534A JP 2011072534 A JP2011072534 A JP 2011072534A JP 5906513 B2 JP5906513 B2 JP 5906513B2
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- 239000002131 composite material Substances 0.000 title claims description 25
- 239000011941 photocatalyst Substances 0.000 title description 28
- 239000000463 material Substances 0.000 claims description 98
- 239000004065 semiconductor Substances 0.000 claims description 88
- 239000007769 metal material Substances 0.000 claims description 47
- 239000010931 gold Substances 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 230000001699 photocatalysis Effects 0.000 claims description 22
- 229910006585 β-FeSi Inorganic materials 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 238000006722 reduction reaction Methods 0.000 claims description 17
- 239000000376 reactant Substances 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 238000013032 photocatalytic reaction Methods 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010419 fine particle Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 238000000354 decomposition reaction Methods 0.000 description 11
- 229910052732 germanium Inorganic materials 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229960000907 methylthioninium chloride Drugs 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000027756 respiratory electron transport chain Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910005329 FeSi 2 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003317 industrial substance Substances 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Description
2:金属材料
3:半導体材料
Claims (3)
- β−FeSi 2 及びFeGe 2 からなる群から選択された少なくとも1種の半導体材料と、金、銀及び銅からなる群から選択された少なくとも1種の金属材料との複合材料であって、前記半導体材料は、微粒子及び板状からなる群から選択された少なくとも一種の形態で基材に対して分散して存在しており、前記金属材料が前記半導体材料の表面及び内部の少なくとも一部に、粒状及び板状の少なくとも1種の形態で接触することにより前記金属材料が分散配置されており、前記半導体材料と前記金属材料との複合化により、標準電極電位差が前記半導体材料単独の場合より広がっていることを特徴とする光触媒複合材料。
- 光触媒反応により反応を起こさせようとする反応物質の還元反応の標準電極電位をE1、酸化反応の標準電極電位をE2とし、半導体材料の伝導帯の標準電極電位をe1、価電子帯の標準電極電位をe2としたとき、前記e1が前記E1より負電位側であり、前記e2が前記E2より負電位側であり、前記半導体材料に、その価電子帯の標準電極電位e2及び前記E2よりも正電位側に高い標準電極電位e3をもつ金属材料を付着させ、負電位側にe1、正電位側にe3の標準電極電位をもつ半導体材料と金属材料との複合材料とし、前記反応物質が水である場合は、前記半導体材料がβ−FeSi 2 及びFeGe 2 からなる群から選択された少なくとも1種であると共に基材に対して分散して存在しており、前記金属材料がAuであることを特徴とする光触媒複合材料。
- 光触媒反応により反応を起こさせようとする反応物質の還元反応の標準電極電位をE1、酸化反応の標準電極電位をE2とし、半導体材料の伝導帯の標準電極電位をe1、価電子帯の標準電極電位をe2としたとき、前記e1が前記E1より負電位側であり、前記e2が前記E2より負電位側であり、前記半導体材料に、その価電子帯の標準電極電位e2及び前記E2よりも正電位側に高い標準電極電位e3をもつ金属材料を付着させ、負電位側にe1、正電位側にe3の標準電極電位をもつ半導体材料と金属材料との複合材料とし、前記反応物質がアルコールである場合は、前記半導体材料がβ−FeSi 2 及びFeGe 2 からなる群から選択された少なくとも1種であると共に基材に対して分散して存在しており、前記金属材料がAu又はAgであることを特徴とする光触媒複合材料。
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JP2011072534A JP5906513B2 (ja) | 2011-03-29 | 2011-03-29 | 光触媒複合材料 |
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JP2011072534A JP5906513B2 (ja) | 2011-03-29 | 2011-03-29 | 光触媒複合材料 |
Publications (2)
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JP2012205998A JP2012205998A (ja) | 2012-10-25 |
JP5906513B2 true JP5906513B2 (ja) | 2016-04-20 |
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JP2011072534A Active JP5906513B2 (ja) | 2011-03-29 | 2011-03-29 | 光触媒複合材料 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5896889B2 (ja) | 2012-12-07 | 2016-03-30 | 株式会社豊田自動織機 | 光学選択膜 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09225320A (ja) * | 1995-04-14 | 1997-09-02 | Sekisui Chem Co Ltd | 多孔質マイクロカプセル状光触媒体 |
JP3572182B2 (ja) * | 1997-11-10 | 2004-09-29 | 株式会社日本ゲルマニウム研究所 | 半導体触媒 |
JP2004230314A (ja) * | 2003-01-31 | 2004-08-19 | Japan Atom Energy Res Inst | 貴金属被覆光触媒 |
JP5272169B2 (ja) * | 2006-03-17 | 2013-08-28 | 国立大学法人 東京大学 | β−FeSi2形成方法及び電子デバイス作成方法 |
JP5424190B2 (ja) * | 2008-02-10 | 2014-02-26 | 国立大学法人 宮崎大学 | 光触媒を使ったバイオマス由来の燃料および/または燃料前駆体の製造方法 |
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