JP5897313B2 - Resin-encapsulated semiconductor device, resin-encapsulating mold, resin-encapsulated semiconductor device manufacturing method, and lead frame - Google Patents

Description

  The present invention relates to a resin-encapsulated semiconductor device in which a radiation fin can be attached, a resin-encapsulating mold used when manufacturing the resin-encapsulated semiconductor device, a resin-encapsulated semiconductor device manufacturing method, and a resin encapsulating The present invention relates to a lead frame used in a stationary semiconductor device.

  2. Description of the Related Art Resin-encapsulated semiconductor devices (for example, see Non-Patent Document 1) formed by resin-sealing a semiconductor element and a semiconductor element attachment portion such as a die pad to which the semiconductor element is attached are widely used in various electronic devices. .

  FIG. 24 is a perspective view shown for explaining a conventional resin-encapsulated semiconductor device 900 disclosed in Non-Patent Document 1. As shown in FIG. FIG. 24 is a view showing the resin transparently. A conventional resin-encapsulated semiconductor device 900 shown in FIG. 24 is assumed to be a single in-line bridge diode.

  As shown in FIG. 24, a conventional resin-encapsulated semiconductor device 900 includes a die pad (first die pad 911 and second die pad 912) as a semiconductor element mounting portion, a semiconductor element, and a connection connector (first connection connector 921). In addition, a resin-encapsulated semiconductor device main body (hereinafter abbreviated as “main body”) 930 formed by resin-sealing the second connecting connector 922) and the like, and four terminals serving as connection terminals to the outside. Outer leads (referred to as first outer leads 951 and 952 and second outer leads 953 and 954).

  In the resin-encapsulated semiconductor device 900 having such a configuration, the main body 930 has a screw through hole H for attaching the heat dissipating fins 980 (see FIG. 25) to the back surface of the main body 930 (the back side of the paper surface in FIG. 24). Is provided.

  FIG. 25 is a view showing a state in which heat radiation fins 980 are attached to the conventional resin-encapsulated semiconductor device 900 shown in FIG. When attaching the heat radiating fins 980 to the conventional resin-encapsulated semiconductor device 900, the screw 990 is inserted into the screw through hole H from the front of the main body 930 with the heat radiating fins 980 being in contact with the back of the main body 930. Then, the tip of the screw 990 is screwed into a female screw portion (not shown) provided on the heat dissipating fin 980, and the heat dissipating fin 980 is attached by tightening the screw 990.

Product Information> Semiconductor Products> Diodes> Bridge Diodes> Lead Insertion Type [online], Shindengen Electric Co., Ltd. [searched on September 16, 2010], Internet, <URL: http: //www.shindengen. com.product / semi / list_detail_NEW.php? category_id = 01 & sub_id = 03 & product_id = D25JAB80V>

  By the way, when the resin-encapsulated semiconductor device 900 manufactured as described above is mounted on a substrate (not shown) of an electronic device, outer leads 951 to 954 are provided in mounting holes provided in the substrate. After inserting, it is common to electrically connect by soldering or the like. At this time, along with the recent enhancement of functionality and miniaturization of electronic devices, the resin-encapsulated semiconductor devices have been mounted in various forms, and the resin-encapsulated semiconductor device 900 is mounted on the substrate. There is an increasing demand to increase the degree of freedom of mounting when mounting to the Internet. For this reason, the attachment position of the radiation fin 980 may be not the back surface of the main body 930 but the upper surface (top surface) of the main body 930, for example.

  However, in the conventional resin-encapsulated semiconductor device 900, since the attachment position of the radiation fin 980 is fixed, there is a problem that the attachment position of the radiation fin 980 cannot be easily changed.

  Accordingly, the present invention provides a resin-encapsulated semiconductor capable of increasing the degree of freedom in mounting when a resin-encapsulated semiconductor device is attached to a substrate of an electronic device by making it possible to select the mounting position of the heat dissipating fins. An object is to provide an apparatus. It is another object of the present invention to provide a resin sealing mold and a resin sealing semiconductor device manufacturing method capable of manufacturing the resin sealed semiconductor device of the present invention. Furthermore, it aims at providing the lead frame which can improve the heat dissipation effect by using for the resin-sealed semiconductor device of this invention.

  [1] A resin-encapsulated semiconductor device according to the present invention includes a main body in which a semiconductor element and a semiconductor element mounting portion are sealed with resin, an outer lead extending in a predetermined direction from the main body toward the outside, The surface where the outer leads extend is the lower surface of the main body, the back surface thereof is the upper surface of the main body, and the radiating fin is disposed between the lower surface and the upper surface. When the surface that can be attached is the back surface of the main body and the back surface is the front surface of the main body, the main body is provided with a first screw threading portion and a second screw for attaching the radiating fin to the back surface or the upper surface. The through portion is provided on a different surface of the main body.

  [2] In the resin-encapsulated semiconductor device of the present invention, the semiconductor element mounting portion is composed of a plate-shaped die pad for mounting the semiconductor element, and the die pad is a mounting portion for mounting the semiconductor element. And a bent flat portion formed by bending the end portion on the upper surface side of the mounting portion toward the front side.

  [3] In the resin-encapsulated semiconductor device of the present invention, the distal end portion of the bent plane portion is formed so as to be located on the front side with respect to an intermediate position between the front surface and the back surface. Is preferred.

  [4] In the resin-encapsulated semiconductor device of the present invention, it is preferable that the main body is provided with a misalignment preventing engagement portion for preventing a displacement of the attachment position of the heat dissipating fin.

  [5] In the resin-encapsulated semiconductor device of the present invention, a first insertion path and a second insertion path for passing a screw are formed by the first screw passage part and the second screw passage part. It is preferable that the 1 insertion path and the 2nd insertion path are provided so that it may cross | intersect.

  [6] In the resin-encapsulated semiconductor device of the present invention, the first screw passage portion and the second screw passage portion have a first protrusion having a first protrusion for forming the first screw passage portion. It is preferable that it is molded by a resin sealing mold comprising a second mold having a mold and a second protrusion for molding the second threading portion.

  [7] In the resin-encapsulated semiconductor device of the present invention, the first screw passage portion has a first U-shaped space and a second U-shape that shares the space with the first U-shaped space. The first U-shaped space has a U-shape having a semicircular curved portion and an opening on the front surface, and the curved portion is located on the upper surface side of the front surface. The opening is located between an end side and an end side on the lower surface side, and the opening is positioned on an end side on the lower surface side of the front surface, and the first U-shaped space is predetermined toward the back surface. The second U-shaped space is formed in a U shape having a semicircular curved portion and an opening on the lower surface, and the curved portion is formed on the front side of the lower surface. Located between the edge and the edge on the back side, and the opening is The second U-shaped space located on the front side edge is formed up to a predetermined position toward the upper surface, and the second screw passage portion includes a third U-shaped space, A fourth U-shaped space that shares a space with the third U-shaped space, and the third U-shaped space has a curved portion and an opening that form a semicircle on the back surface. The curved portion is positioned between the upper surface side edge and the lower surface side edge of the back surface, and the opening is positioned on the upper surface side edge of the back surface. The third U-shaped space is formed up to a predetermined position toward the front, and the fourth U-shaped space has a semicircular curved portion and an opening on the upper surface. It has a U-shape, and the curved portion is formed between the front side edge and the back side edge of the upper surface. And the opening is located at an end of the upper surface on the back side, and the fourth U-shaped space is formed to a predetermined position toward the lower surface, and the first screw thread And the second threaded portion share a space, and when viewed from the upper surface or the lower surface, the curved portion of the second U-shaped space and the curved portion of the fourth U-shaped space The first insertion passage having a circular shape is formed, and when viewed from the front or the back, the curved portion of the first U-shaped space and the curved shape of the third U-shaped space are formed. It is preferable that the second insertion passage having a circular shape is formed by the portion.

  [8] In the resin-encapsulated semiconductor device of the present invention, when the heat radiating fin is attached to the back surface, the screw is connected to the curved portion of the first U-shaped space and the third portion. When the heat radiating fin is attached to the upper surface, the screw is connected to the curved portion of the second U-shaped space and the fourth U-shaped space. The positioning is preferably performed by the curved portion of the character space.

  [9] In the resin-encapsulated semiconductor device of the present invention, the first screw passage portion is formed as a notch groove in which the front surface is notched from the upper surface to the lower surface, and the notch groove is formed on the upper surface. And has a U-shape having a semicircular curved portion and an opening, and the curved portion is located between the front side edge and the back side edge of the upper surface, and the opening. The portion is located at the front side edge of the upper surface, and the curved portion and the opening are formed up to the lower surface, and the curved portion is used as the first insertion passage, and the second threading portion Is formed as a through-hole penetrating from the curved surface to the back surface, and the through-hole is used as the second insertion hole, and preferably has a circular shape when viewed from the front or the back surface.

  [10] In the resin-encapsulated semiconductor device of the present invention, at least one of the first screw passage portion and the second screw passage portion is formed in the main body by a drilling device. It is also preferable.

  [11] A resin sealing mold of the present invention includes a main body in which a semiconductor element and a semiconductor element mounting portion are sealed with a resin, an outer lead extending in a predetermined direction from the main body toward the outside, The surface on which the outer lead extends is the lower surface of the main body, the back surface thereof is the upper surface of the main body, and the surface on which the radiation fins can be attached between the lower surface and the upper surface is the rear surface of the main body When the back surface is the front surface of the main body, the main body is provided with a first screw passage portion and a second screw passage portion for attaching the radiating fins to the back surface or the upper surface on different surfaces of the main body. A resin-sealing mold for manufacturing a resin-sealed semiconductor device, wherein the first metal corresponds to the front side when the main body is divided into the front side and the back side. Compatible with mold and back side The first mold has a first protrusion for molding the first screw threaded portion in a mold housing of the first mold, and the second mold. The mold has a second protrusion for forming the second screw threaded portion in the mold housing of the second mold, and the first protrusion and the second protrusion are the first protrusion When the main body is molded by injecting resin into a space formed by abutting the opening surface of the mold housing of the mold with the opening surface of the mold housing of the second mold Further, the first screw passage portion and the second screw passage portion can be molded.

  [12] In the resin sealing mold of the present invention, the lower surface of the main body among the respective inner surfaces of the mold housing of the first mold and the mold housing of the second mold. A mold housing of the first mold in a state in which the first mold and the second mold are placed so that the molding surface is a bottom molding surface, and the bottom molding surface is horizontal and faces upward Left and right when the inside of the mold housing of the first mold and the inside of the mold housing of the second mold are viewed from the opening surface of the mold and the opening surface of the mold housing of the second mold, respectively. When the direction is the x-axis, the front-rear direction is the y-axis, and the vertical direction is the z-axis, the first protrusion has a flat surface at the lower end of the first protrusion, and the first protrusion A semi-circular first tip curved surface is formed at the tip from the lower end of the first protrusion to a predetermined position along the z axis, and the upper end of the first protrusion is formed. The semicircular upper end curved surface is formed from the base of the first protrusion to a predetermined position along the y axis, and a predetermined angle is provided between the first tip curved surface and the upper end curved surface. An inclined first inclined surface is formed, and the second protrusion has a flat surface at the upper end of the second protrusion and a semicircular shape at the tip of the second protrusion. Two curved end surfaces are formed from the upper end side of the second projecting portion to a predetermined position along the z-axis, and a lower end curved surface having a semicircular shape at the lower end of the second projecting portion is the base of the second projecting portion. To a predetermined position along the y-axis, and a second inclined surface having a shape corresponding to the first inclined surface is formed between the second distal curved surface and the lower curved surface. It is preferable.

  [13] In the resin-sealing mold of the present invention, the lower surface of the main body among the inner surfaces of the mold housing of the first mold and the mold housing of the second mold. A mold housing of the first mold in a state in which the first mold and the second mold are placed so that the molding surface is a bottom molding surface, and the bottom molding surface is horizontal and faces upward Left and right when the inside of the mold housing of the first mold and the inside of the mold housing of the second mold are viewed from the opening surface of the mold and the opening surface of the mold housing of the second mold, respectively. When the direction is the x-axis, the front-rear direction is the y-axis, and the up-down direction is the z-axis, the first protrusion has a semicircular curved surface along the z-axis at the tip of the first protrusion. It is formed from the upper end to the lower end inside the one mold, and the second protrusion is a curve formed in the direction along the y-axis and at the tip of the first protrusion. It is preferably formed as a cylindrical protrusion protruding toward the.

  [14] In the mold for resin sealing of the present invention, the curved surface formed at the tip of the first protrusion has a tip surface having a shape corresponding to the column tip surface of the columnar protrusion. It is preferable that the protrusion is provided in a direction along the y-axis.

  [15] In the resin-sealing mold of the present invention, the second mold is a misalignment prevention member that prevents misalignment of the radiation fin when the radiation fin is attached to the main body. It is preferable to have an engagement molding part for molding the joint part.

  [16] A method for manufacturing a resin-encapsulated semiconductor device according to the present invention includes a main body in which a semiconductor element and a semiconductor element mounting portion are sealed with a resin, and an outer that extends outward from the main body in a predetermined direction. A surface on which the outer lead extends is defined as a lower surface of the main body, a rear surface thereof is defined as an upper surface of the main body, and a surface on which heat radiation fins can be attached between the lower surface and the upper surface. When the back surface of the main body is used and the back surface is the front surface of the main body, the main body has a first screw passage portion and a second screw passage portion for attaching the radiating fins to the back surface or the upper surface. A method for manufacturing a resin-encapsulated semiconductor device for manufacturing a resin-encapsulated semiconductor device provided on a surface, wherein the front side when the main body is divided into the front side and the back side Body of A corresponding first mold, and a second mold corresponding to the main body on the back side, wherein the first mold has a first protrusion for forming the first screw threaded portion. The second mold has a second protrusion for forming the second threading portion in the mold casing of the second mold, and the second mold has a mold casing of the second mold, The first protrusion and the second protrusion are in a space formed by abutting the opening surface of the mold housing of the first mold with the opening surface of the mold housing of the second mold. Resin for preparing a resin sealing mold having a shape capable of forming the first screw passage portion and the second screw passage portion in the main body when the main body is molded by injecting resin. A sealing die preparing step, a semiconductor element attaching step of attaching the semiconductor element to the semiconductor element attaching portion, and the semiconductor element After a predetermined range including the semiconductor element mounting portion is covered with the resin sealing mold, a resin is injected into the resin sealing mold to include the semiconductor element and the semiconductor element mounting portion. And a resin sealing step for resin-sealing the range.

  [17] A lead frame of the present invention includes a main body in which a semiconductor element and a semiconductor element mounting portion are sealed with a resin, and an outer lead extending in a predetermined direction from the main body toward the outside, The surface from which the outer lead extends is the lower surface of the main body, the back surface is the upper surface of the main body, and the surface on which the radiation fin can be attached between the lower surface and the upper surface is the back surface of the main body. The main body is provided with a first screw passage portion and a second screw passage portion on the different surfaces of the main body for attaching the radiating fins to the back surface or the upper surface. A lead frame for use in a sealed semiconductor device, comprising a plate-shaped die pad for mounting the semiconductor element, and the outer lead, wherein the die pad is A mounting portion for mounting the serial semiconductor element, and having a bent flat portion of the end portion of the upper surface side is formed by bending the front side of the mounting portion.

  [18] In the lead frame of the present invention, it is preferable that the tip of the bent flat portion is formed so as to be located on the front side with respect to an intermediate position between the front surface and the back surface.

  [19] The lead frame of the present invention includes a main body in which a semiconductor element and a semiconductor element mounting portion are sealed with a resin, and an outer lead extending in a predetermined direction from the main body toward the outside, The surface on which the outer lead extends is the lower surface of the main body, the back surface is the upper surface of the main body, and the surface on which the radiation fin can be attached between the lower surface and the upper surface is the rear surface of the main body. When the back surface is the front surface of the main body, the main body is provided with a first screw passage portion and a second screw passage portion for attaching the radiating fins to the back surface or the upper surface on different surfaces of the main body. In a resin sealing mold for manufacturing a resin-encapsulated semiconductor device, a first mold corresponding to the front side when the main body is divided into the front side and the back side, and the back side A second mold corresponding to the first mold, the first mold has a first projecting portion for molding the first screw threaded portion in a mold housing of the first mold, The second mold has a second protrusion for forming the second screw threaded portion in the mold housing of the second mold, and the first protrusion and the second protrusion are When the main body is molded by injecting resin into a space formed by abutting the opening surface of the mold housing of the first mold with the opening surface of the mold housing of the second mold A lead frame for manufacturing a resin-encapsulated semiconductor device using the resin-encapsulating mold having a shape capable of forming the first screw-through portion and the second screw-through portion in the main body. A die pad for mounting a semiconductor element and the outer lead, and the die pad. The second mold provided in the mold housing of the first mold and the second mold provided in the mold housing of the first mold of the resin sealing mold. A space for avoiding contact with at least one of the protrusions is formed.

  According to the resin-encapsulated semiconductor device of the present invention, since the first screw passing portion and the second screw passing portion for attaching the heat dissipating fin to the back surface or the top surface of the main body are provided, It can be selectively attached to any of the top surfaces. Thereby, according to the resin-encapsulated semiconductor device of the present invention, it is possible to increase the degree of freedom in mounting when the resin-encapsulated semiconductor device is attached to a substrate of an electronic device.

  Further, according to the resin sealing mold of the present invention, the first mold corresponding to the front side of the main body and the back of the main body when the main body is considered to be divided into the front side and the back side of the main body. A second mold corresponding to the side, the first mold has a first protrusion for molding the first screw threaded portion, and the second mold for molding the second screw threaded portion. 2nd protrusion part. For this reason, the resin-sealed semiconductor device according to [1] can be manufactured by using the resin-sealing mold of the present invention.

  In addition, according to the method for manufacturing a resin-encapsulated semiconductor device of the present invention, a resin-encapsulating mold having a shape capable of forming the first screw passage portion and the second screw passage portion in the main body is prepared. After covering a predetermined range including the resin sealing mold preparing step, the semiconductor element mounting step of attaching the semiconductor element to the semiconductor element mounting portion, and the semiconductor element and the semiconductor element mounting portion with the resin sealing mold, And a resin sealing step of resin sealing a predetermined range including the semiconductor element and the semiconductor element mounting portion by injecting resin into the resin sealing mold. For this reason, the resin-encapsulated semiconductor device according to [1] can be manufactured by sequentially performing these steps.

  According to the lead frame of the present invention, since the die pad has a bent flat portion formed by bending the upper end of the mounting portion toward the front side of the main body, when the radiating fin is attached to the upper surface of the main body, The heat radiating fins are opposed to the bent flat portion in a wide area. Thereby, a high heat dissipation effect can be obtained.

  According to the lead frame of the present invention, the die pad includes a first projecting portion and a second mold mold housing provided in the mold housing of the first mold of the resin sealing mold. Since the space part for avoiding contact | abutting with the at least one protrusion part provided in the inside of the 2nd protrusion part is formed, the main body is formed using the resin sealing mold At this time, it is possible to prevent the die pad constituting the lead frame of the present invention from coming into contact with the protruding portion provided in the resin sealing mold. Thus, the die pad can be smoothly installed in the resin sealing mold.

It is a figure shown in order to demonstrate the structure of 200 A of resin-sealed semiconductor devices which concern on Embodiment 1. FIG. It is a figure shown in order to demonstrate the manufacturing process of 200 A of resin-sealed semiconductor devices which concern on Embodiment 1. FIG. 3 is an enlarged view of a first die pad 111 and a second die pad 112. FIG. It is a figure shown in order to demonstrate the 1st threading part 300 and the 2nd threading part 400. FIG. It is the figure which looked at the 1st threading part 300 and the 2nd threading part 400 shown in FIG. 4 from each direction. It is a figure shown in order to demonstrate the case where the thermal radiation fin 500 is attached to the back surface 210c of the main body 210. FIG. It is a figure shown in order to demonstrate the case where the radiation fin 500 is attached to the upper surface 210b of the main body 210. FIG. It is a figure shown in order to demonstrate the resin sealing type | mold 700 for manufacturing the resin sealing type semiconductor device 200A which concerns on Embodiment 1. FIG. It is a figure shown in order to demonstrate the resin sealing type | mold 700 for manufacturing the resin sealing type semiconductor device 200A which concerns on Embodiment 1. FIG. It is an expanded sectional view showing the relation between the 1st projection part 712 and the 2nd projection part 722 at the time of making the state which matched the 1st metallic mold 710 and the 2nd metallic mold 720. It is a figure shown in order to demonstrate the resin sealing type semiconductor device 200B which concerns on Embodiment 2. FIG. It is a figure which shows the state which attached the radiation fin 500 to the resin sealing type semiconductor device 200B which concerns on Embodiment 2. FIG. It is a figure shown in order to demonstrate the resin sealing type semiconductor device 200C which concerns on Embodiment 3. FIG. It is a figure shown in order to demonstrate the structure of resin sealed semiconductor device 200D which concerns on Embodiment 4. FIG. It is the figure which sees the 1st threading part 300D and the 2nd threading part 400D in resin-sealing type semiconductor device 200D which concern on Embodiment 4 from each direction. FIG. 10 is a view for explaining a first die pad 111 and a second die pad 112 of a lead frame 100D in a resin-encapsulated semiconductor device 200D according to Embodiment 4. It is a figure shown in order to demonstrate the case where the thermal radiation fin 500 is attached to the back surface 210c of the main body 210 in resin-sealed semiconductor device 200D which concerns on Embodiment 4. FIG. It is a figure shown in order to demonstrate the case where the radiation fin 500 is attached to the upper surface 210b of the main body 210 in resin-sealed semiconductor device 200D which concerns on Embodiment 4. FIG. It is a figure shown in order to demonstrate the resin sealing metal mold | die 800 for manufacturing resin sealing type semiconductor device 200D which concerns on Embodiment 4. FIG. It is a figure shown in order to demonstrate the resin sealing metal mold | die 800 for manufacturing resin sealing type semiconductor device 200D which concerns on Embodiment 4. FIG. FIG. 10 is an enlarged cross-sectional view showing the relationship between the first protrusion 812 and the second protrusion 822 when the first mold 810 and the second mold 820 are brought into contact with each other. It is a figure shown in order to demonstrate the resin sealing type semiconductor device 200E which concerns on Embodiment 5. FIG. It is a figure which shows the structure of the resin-sealed semiconductor device 200F at the time of forming the screw threading hole as a threading part with drilling apparatuses, such as a drill. It is a perspective view shown in order to demonstrate the conventional fat sealing type semiconductor device 900 currently disclosed by the nonpatent literature 1. FIG. It is a figure which shows the state which attached the radiation fin 980 to the conventional resin-sealed semiconductor device 900 shown in FIG.

  Hereinafter, embodiments of the present invention will be described.

[Embodiment 1]
FIG. 1 is a view for explaining the configuration of a resin-encapsulated semiconductor device 200A according to the first embodiment. 1A is a perspective view when the front surface of the resin-encapsulated semiconductor device 200A is viewed from an oblique lateral direction, and FIG. 1B is an oblique view of the front surface of the resin-encapsulated semiconductor device 200A from an obliquely lower direction. FIG. Here, a case where the resin-encapsulated semiconductor device 200A is a single in-line bridge diode will be described as an example. FIG. 1 shows a state in which the heat radiating fins 500 (see FIGS. 6 and 7) are not attached.

  As shown in FIG. 1, a resin-encapsulated semiconductor device 200A according to the first embodiment includes a resin-encapsulated semiconductor device main body (abbreviated as “main body” in the embodiment) 210 and a lead frame 100A (FIG. 2). (See (a)) outer leads (referred to as first outer leads 121 and 122 and second outer leads 123 and 124). The configuration of the lead frame 100A will be described later. The first outer leads 121 and 122 and the second outer leads 123 and 124 extend from the main body 210 in the direction along the z axis (the direction of the arrow z ′).

  Further, in this specification, of the surfaces of the main body 210, the surface from which the outer leads 121 to 124 extend is defined as the lower surface 210a, and the rear surface (the main body 210 in FIG. 1 is viewed along the arrow z ′ direction. (The surface of the main body 210) is the upper surface 210b, and a surface on which the heat radiation fins 500 (not shown in FIG. 1) can be attached between the lower surface 210a and the upper surface 120b (the main body 210 in FIG. The surface of the main body 210 when viewed along the front surface is a back surface 210c, and the back surface (the surface of the main body 210 when the main body 210 is viewed along the direction of arrow y 'in FIG. 1) is the front surface 210d. Alternatively, the surface of the main body 210 when viewed from the x ′ direction will be described as side surfaces 210e.

  The lower surface 210a, the upper surface 210b, the back surface 210c, the front surface 210d, and the side surface 210e are “the lower surface 210a of the main body 210”, “the upper surface 210b of the main body 210”, “the rear surface 210c of the main body 210”, and “the front surface 210d of the main body 210”. And “side surface 210e of the main body 210” may be abbreviated, and “bottom of the main body 210” may be omitted and “lower surface 210a”, “upper surface 210b”, “back surface 210c”, “front surface 210d”, and “side surface 210e”. May be written.

  The main body 210 has a side surface 210e (referred to as a side surface shape) having a square shape or a substantially square shape, and has a rectangular parallelepiped shape as a whole. In this specification, a square or a substantially square is represented as “square shape”.

  Further, the main body 210 has a first screw passage portion 300 and a second screw passage portion 400 for enabling the heat radiation fin 500 (not shown in FIG. 1) to be attached to the back surface 210c or the upper surface 210b of the main body 210. It is provided on a different surface of the main body 210. The first screw passage portion 300 and the second screw passage portion 400 will be described later.

  FIG. 2 is a view for explaining the manufacturing process of the resin-encapsulated semiconductor device 200A according to the first embodiment. In FIG. 2, each process up to a stage before attaching the radiation fins 500 is shown. FIG. 3 is an enlarged view of the first die pad 111 and the second die pad 112.

  FIG. 2A shows a lead frame preparation process for preparing the lead frame 100A. The lead frame 100A prepared here includes a semiconductor element mounting portion 110 composed of plate-shaped die pads (first die pad 111 and second die pad 112) and a plurality (four) of outer leads (connection terminals to the outside). First outer leads 121, 122 and second outer leads 123, 124) and the respective leads of the first outer leads 121, 122 and the second outer leads 123, 124. In the stopping process, the tie bar 130 for preventing the resin from flowing out is provided so as to connect the distal ends of the first outer leads 121 and 122 and the second outer leads 123 and 124, and the rigidity of the lead frame 100A is maintained. And an auxiliary bar 140. The tie bar 130 and the auxiliary bar 140 are finally separated from the outer leads (first outer leads 121 and 122 and second outer leads 123 and 124).

  Each of the first die pads 111 has two semiconductor element mounting portions (hereinafter abbreviated as “mounting portions”) 111a for mounting one semiconductor element (not shown in FIG. 2A). 111 b and a first connecting part 111 c for connecting the mounting parts 111 a and 111 b are provided at the lower end of the first die pad 111. The second die pad 112 is connected to two mounting portions 112a and 112b for mounting one semiconductor element (not shown in FIG. 2A) and the mounting portions 112a and 112b. Two connecting portions 112 c are provided at the upper end of the second die pad 112. An enlarged view of the first die pad 111 and the second die pad 112 is shown in FIG.

  The first die pad 111 and the second die pad 112 will be described with reference to FIG. As shown in FIG. 3, the first die pad 111 is a bent plane portion formed by bending the end on the upper surface 210 b side of the main body 210 in the mounting portions 111 a and 111 b by 90 degrees toward the front 210 d side (y-axis direction). 111d, 111e. Similarly, the second die pad 112 is also bent plane portions 112d and 112e formed by bending the end portions on the upper surface 210b side of the main body 210 in the mounting portions 112a and 112b by 90 degrees toward the front 210d side (y-axis direction). have. Note that the length in the y-axis direction of the bent flat portions 111d, 112d, and 112e (referred to as the bent length) is “k”, and the bent length of the bent flat portions 111e is “k ′”. The bending lengths k and k ′ will be described later.

  In addition, the 2nd connection part 112c which connects mounting part 112a, 112b is provided so that between the bending | flexion front-end | tip parts of bending plane part 112d, 112e of mounting part 112a, 112b may be connected.

  A space S is formed in the die pad (the first die pad 111 and the second die pad 112). The space S includes the die pad and the second protrusion 722 provided in the second mold 720 of the resin sealing mold 700 (see FIGS. 8 and 9) for forming the main body 210. This is for avoiding the contact.

  By forming such a space portion S, when the main body 210 is molded using the resin sealing mold 700, die pads (the first die pad 111 and the second die pad 112) that constitute the lead frame 100A. ) And the second protrusion 722 provided in the second mold 720 can be prevented from coming into contact with each other. Accordingly, the die pads (first die pad 111 and second die pad 112) can be smoothly installed in the resin sealing mold 700.

  The description returns to FIG. Of the first outer leads 121 and 122, the first outer lead 121 is formed integrally with the first die pad 111, and is provided so that the tip extends in the arrow z 'direction. The first outer lead 122 of the first outer leads 121 and 122 is formed integrally with the second die pad 112, and is provided so that the tip extends in the direction indicated by the arrow z '.

  On the other hand, of the second outer leads 123 and 124, the second outer lead 123 is disposed away from the second die pad 112 and has a connection portion 123a at the rear end, and the tip extends in the arrow z ′ direction. It is arranged to be put out. Of the second outer leads 123 and 124, the second outer lead 124 is disposed away from the first die pad 111, has a connecting portion 124a at the rear end, and the tip is in the direction of the arrow z ′. It is arranged to extend.

  The tie bar 130 is provided in a direction orthogonal to the first outer leads 121, 122 and the second outer leads 123, 124, and is formed integrally with the first outer leads 121, 122 and the second outer leads 123, 124. Yes.

  FIG. 2B and FIG. 2C are diagrams showing a semiconductor element attachment process for attaching the semiconductor elements 151 to 154. In the semiconductor element attaching step, as shown in FIG. 2B, the semiconductor elements (diodes) 151 and 152 are electrically connected to the mounting portions 111a and 111b of the first die pad 111 by soldering, and the second die pad is used. The semiconductor elements (diodes) 153 and 154 are electrically connected to the mounting portions 112a and 112b of the 112. The mounting portions 111 a and 111 b of the first die pad 111 have a larger area than the semiconductor elements 151 and 152. Similarly, the mounting portions 112 a and 112 b of the second die pad 112 have a larger area than the semiconductor elements 153 and 154.

  Subsequently, as shown in FIG. 2C, one end of the first connecting connector 161 having an oval shape is connected to the semiconductor elements 152 and 153 and the other end is connected to the connecting portion 124 a of the second outer lead 124. Then, the semiconductor elements 152 and 153 and the second outer lead 124 are electrically connected. Similarly to the first connection connector 161, one end of the second connection connector 162 having an oval shape is connected to the semiconductor elements 151 and 154, and the other end is connected to the connection portion 123 a of the second outer lead 123. The semiconductor elements 151 and 154 and the second outer lead 123 are electrically connected.

  Next, a resin sealing process is performed. In the resin sealing step, the first die pad 111 and the second die pad 112, the respective semiconductor elements 151 to 154, the first connection connector 161, the second connection connector 162, and the like are molded into a resin sealing mold 700 (FIG. 8). 9), the body 210 is molded by injecting resin into the resin sealing mold 700 and curing the injected resin (see FIG. 2D). .) Note that when the resin is injected into the resin sealing mold 700, the resin can be prevented from flowing out of the resin sealing mold 700 due to the presence of the tie bar 130.

  Then, a tie bar separating step is performed for separating the tie bar 130 by a punch die (not shown). In the tie bar separating step, the auxiliary bar 140 is also separated. In this way, a resin-encapsulated semiconductor device 200A as shown in FIG. 2 (e) can be manufactured.

Next, the first screw thread part 300 and the second screw thread part 400 will be described.
FIG. 4 is a view for explaining the first screw passage portion 300 and the second screw passage portion 400. FIG. 4A is an enlarged perspective view showing the first screw passage portion 300 and the second screw passage portion 400 and the periphery thereof in the main body 210, and FIG. 4B is an aa view in FIG. 4A. It is arrow sectional drawing.

  FIG. 5 is a view of the first screw passage portion 300 and the second screw passage portion 400 shown in FIG. 4 as viewed from each direction. 5A is a view of the front surface 210d of the main body 210, and FIG. 5B is a view of the back surface 210c of the main body 210. 5C is a view of the upper surface 210b of the main body 210, and FIG. 5D is a view of the lower surface 210a of the main body 210.

  5 (a) and 5 (b), the upper surface 210b is shown to be positioned on the upper side of the drawing, and in FIGS. 5 (c) and 5 (d), the front surface 210d is shown. It is shown to be located on the left side.

  The first screw passage portion 300 and the second screw passage portion 400 are formed by a U-shaped space having a semicircular curved portion and an opening. First, the first screw thread part 300 will be described.

The first threading portion 300 includes a first U-shaped space 310 (see FIG. 5A) and a second U-shaped space 320 (sharing with the first U-shaped space 310). (See FIG. 5D).
As shown in FIG. 5A, the first U-shaped space 310 has a U-shape having a semicircular curved portion 311 and an opening 312 on the front surface 210d. In such a first U-shaped space 310, the curved portion 311 is located between the end on the upper surface 210b side and the end on the lower surface 210a side of the main body 210 in the front surface 210d, and the opening 312 is , Located at the end of the front surface 210d on the lower surface 210a side. The first U-shaped space 310 is formed up to a predetermined position toward the back surface 210c.

  As shown in FIG. 5D, the second U-shaped space 320 has a U-shape having a semicircular curved portion 321 and an opening 322 on the lower surface 210a. In such a second U-shaped space 320, the curved portion 321 is located between the end on the front surface 210d side and the end side on the back surface 210c side of the lower surface 210a, and the opening 322 is formed on the lower surface 210a. Is located at the end on the front side 210d. The second U-shaped space 320 is formed up to a predetermined position toward the upper surface 210b.

On the other hand, the second threading portion 400 includes a third U-shaped space 410 (see FIG. 5B) and a fourth U-shaped space sharing a space with the third U-shaped space 410. 420 (see FIG. 5C).
As shown in FIG. 5B, the third U-shaped space 410 has a U-shape having a semicircular curved portion 411 and an opening 412 on the back surface 210c. In such a third U-shaped space 410, the curved portion 411 is located between the edge on the upper surface 210b side and the edge on the lower surface 210a side of the back surface 210c, and the opening 412 is formed on the back surface 210c. Is located at the edge on the upper surface 210b side. The third U-shaped space 410 is formed up to a predetermined position toward the front surface 210d.

  As shown in FIG. 5C, the fourth U-shaped space 420 has a U-shape having a semicircular curved portion 421 and an opening 422 on the upper surface 210b. In such a fourth U-shaped space 420, the curved portion 421 is located between the end on the front surface 210d side and the end side on the back surface 210c side of the upper surface 210b, and the opening 422 is formed on the upper surface 210b. Is located on the edge of the back surface 210c side. The fourth U-shaped space 420 is formed up to a predetermined position toward the lower surface 210a.

  Since the first screw passage portion 300 and the second screw passage portion 400 have such a configuration, the first screw passage portion 300 and the second screw passage portion 400 share a space inside the main body 210. It has a structure. Then, the center line L1 in the direction along the z-axis of the first U-shaped space 310 in the first threading portion 300 and the z-axis of the third U-shaped space 410 in the second threading portion 400. As shown in FIGS. 5 (a) and 5 (b), the center line L2 in the same direction exists on the same axis (y-axis), and the second U-shape in the first screw thread portion 300 is present. The center line L3 in the direction along the y-axis of the space 320 and the center line L4 in the direction along the y-axis of the fourth U-shaped space 420 in the second screw thread portion 400 are shown in FIG. As shown in FIG. 5 (d), it exists on the same axis (z axis).

  The first screw passage portion 300 and the second screw passage portion 400 have such a structure, that is, a structure in which the first screw passage portion 300 and the second screw passage portion 400 share respective spaces inside the main body 210. By doing so, the first screw passage portion 300 and the second screw passage portion 400 can be provided in a space that is as small as sharing the space.

  In addition, when the upper surface 210b or the lower surface 210a is viewed from the first screw passage portion 300 and the second screw passage portion 400, as shown in FIG. 5C and FIG. A first insertion path Wa having a circular shape is formed by the curved portion 321 of the second U-shaped space 320 and the curved portion 421 of the fourth U-shaped space 420 in the second screw-through portion 400.

In addition, when the front screw 210 and the second screw screw 400 are viewed from the front 210d or the back 210c, the first screw thread 300 and the second screw thread 400, as shown in FIG. 5A and FIG. A second insertion passage Wb having a circular shape is formed by the curved portion 311 of the first U-shaped space 310 and the curved portion 411 of the third U-shaped space 410 in the second screw passage portion 400.

  In the following, for simplification of description, “the curved portion 311 of the first U-shaped space 310 in the first threading portion 300” is referred to as “the curved portion 311 of the first threading portion 300”. The “curved portion 321 of the second U-shaped space 320 in the first screw threaded portion 300” is referred to as “curved portion 321 of the first screw threaded portion 300”, and “the third U shape in the second threaded portion 400”. The curved portion 411 of the space 410 is referred to as the “curved portion 411 of the second threading portion 400”, and the “curved portion 421 of the fourth U-shaped space 420 in the second threading portion 400” is referred to as “second. This is expressed as “curved portion 421 of screw thread portion 400”.

  In such a configuration, when the upper surface 210b is viewed, as shown in FIG. 5C, it is possible to see through the first insertion path Wa to the far side of the lower surface 210a. Further, when the lower surface 210a is viewed, as shown in FIG. 5D, it is possible to see through the second insertion passage Wb to the farther side of the upper surface 210b.

  On the other hand, when looking at the front surface 210d, as shown in FIG. 5A, it is possible to see through the second insertion path Wb to the far side of the back surface 210c. Further, when viewing the back surface 210c, as shown in FIG. 5 (b), it is possible to see through the second insertion path Wb to the far side of the front surface 210d.

  Since the first screw passage portion 300 and the second screw passage portion 400 have the above-described structure, a screw 600 (see FIGS. 6 and 7) for attaching the radiation fin 500 is attached to the front surface 210 d of the main body 210. From the lower surface 210a of the main body 210 to the upper surface 210b. Accordingly, the heat radiation fin 500 can be selectively attached to the back surface 210c or the top surface 210b of the main body 210.

  In the resin-encapsulated semiconductor device 200A according to the first embodiment, the position of the central axis Pa of the first insertion passage Wa is, for example, a position that is 1/2 the dimension in the y-axis direction of the main body 210 (front 210d and back 210c, for example, an intermediate position between the two side surfaces 210e, for example.

  Further, the position of the central axis Pb of the second insertion passage Wb is, for example, a position that is 1/2 of the dimension in the z-axis direction of the main body 210 (the upper surface of the main body 210) in the resin-encapsulated semiconductor device 200A according to the first embodiment. 210b and the lower surface 210a, for example, and a position that is half the dimension of the main body 210 in the x-axis direction (for example, an intermediate position between both side surfaces 210e). Note that the center axis Pa of the first insertion path Wa and the center axis Pb of the second insertion path Wb may be slightly deviated from the above-described positions as long as the respective center axes are orthogonal to each other.

  On the other hand, the radiating fin 500 is provided with a female screw portion 500 a for screwing the radiating fin 500 to the main body 210. The female screw portion 500a is provided at the central portion of the radiation fin-side attachment surface 510 (referred to as the radiation fin-side attachment surface 510) when the radiation fin 500 is attached to the main body 210.

  The positions of the first insertion path Wa and the second insertion path Wb in the main body 210 and the position of the female screw portion 500a in the heat radiation fin 500 are provided at such positions, so that the heat radiation fin 500 is connected to the rear surface of the main body 210. In either case of attaching to 210c or the upper surface 210b, the radiation fin 500 can be attached in a stable state. In the main body 210, the screwing position when the radiating fin 500 is attached to the back surface 210 c or the top surface 210 b of the main body 210 is approximately the center of the back surface 210 c or the top surface 210 b. Moreover, in the radiation fin 500, it is the center of the radiation fin side attachment surface 510. FIG.

  By the way, the bending length k (see FIG. 3) of the bending flat portion 111d formed on the first die pad 111 and the bending length k (see FIG. 3) of the bending flat portions 112d and 112e formed on the second die pad 112. ) Is preferably set so that the bent tip portions of these bent flat portions 111d, 112d, and 112e are positioned at least on the front surface 210d side of the main body 210 with respect to the central axis Pa of the first insertion passage Wa. Further, the bending length k ′ (see FIG. 3) of the bending plane portion 111e formed on the first die pad 111 is also such that the bending tip portion of the bending plane portion 111e is at least from the central axis Pa of the first insertion passage Wa. Is also preferably set so as to be positioned on the front surface 210d side of the main body 210.

  In the resin-encapsulated semiconductor device 200A according to the first embodiment, the bending length k and the bending length k ′ are the heights h of the first die pad 111 and the second die pad 112 along the z-axis (FIG. 3). Refer to.) Or equivalent. However, the bending length k ′ is slightly shorter than the bending length k because the second connecting portion 112c that connects the bent flat portions 112d and 112e of the second die pad 112 exists.

  As described above, the bending length k and the bending length k ′ are equal to or substantially equal to the height h (see FIG. 3) in the direction along the z-axis of the first die pad 111 and the second die pad 112. Therefore, when the die pad and the semiconductor element are sealed with resin, the side surface shape of the main body 210 can be made square.

  By making the side surface shape of the main body 210 into a square shape, the upper surface 210b of the main body 210 has an area equivalent to that of the back surface 210c of the main body 210 which originally has a large area.

  FIG. 6 is a view for explaining the case where the heat radiating fins 500 are attached to the back surface 210 c of the main body 210. FIG. 6A is a perspective view, and FIG. 6B is an enlarged cross-sectional view for explaining the relationship between the first screw threading portion 300 and the second screw threading portion 400 and the screw 600.

  When attaching the heat radiating fins 500 to the back surface 210c of the main body 210, as shown in FIG. 6, the tips of the screws 600 are placed on the front surface 210d of the main body 210 with the heat radiating fins 500 being in contact with the back surface 210c of the main body 210. After passing the second insertion passage Wb (see FIG. 5C) from the provided first screw passage portion 300, it is projected from the back surface 210c of the main body 210. The tip of the screw 600 is inserted into the female screw portion 500a of the radiating fin 500 and screwed to fix the radiating fin 500. Thereby, the radiation fin 500 can be attached to the back surface 210 c of the main body 210.

  Note that the screw 600 has a head portion of the screw 600 that is separated by two bending portions (the bending portion 311 of the first screw passage portion 300 and the bending portion 411 of the second screw passage portion 400) that are separated in the insertion direction of the screw 600. Since the portion close to the tip and the portion close to the tip are positioned on the opposite sides (see FIG. 6B), the radiating fin 500 is kept in a stable state without being displaced in the horizontal and vertical directions. Can be screwed.

  As shown in FIG. 6, when the radiating fins 500 are attached to the back surface 210c of the main body 210, the radiating fins 500 are opposed to the first die pad 111 and the second die pad 112 in a wide area, so that a high heat radiating effect is obtained. . This is because, as shown in FIG. 3, the first die pad 111 and the second die pad 112 located on the back surface 210c of the main body 210 have a large area, and the radiating fin 500 has such a large area. By facing the first die pad 111 and the second die pad 112 having a high heat dissipation effect.

  FIG. 7 is a view for explaining a case where the heat radiating fins 500 are attached to the upper surface 210 b of the main body 210. FIG. 7A is a perspective view, and FIG. 7B is an enlarged cross-sectional view shown for explaining the relationship between the first screw passage portion 300 and the second screw passage portion 400 and the screw 600.

  When attaching the radiating fin 500 to the upper surface 210 b of the main body 210, the tip of the screw 600 is placed on the lower surface 210 a of the main body 210 with the radiating fin 500 placed on the upper surface 210 b of the main body 210 as shown in FIG. 7. After passing the first insertion passage Wa (see FIG. 5B) from the provided first screw passage portion 300, the first insertion portion Wa is projected to the upper surface 210b of the main body 210. And the thermal radiation fin 500 is fixed by inserting and screwing the front-end | tip part of the screw 600 in the internal thread part 500a. Thereby, the radiation fin 500 can be attached to the upper surface 210 b of the main body 210.

  In the case of FIG. 7, the screw 600 includes two bending portions separated in the insertion direction of the screw 600 (the bending portion 321 of the first screw passing portion 300 and the bending portion 421 of the second screw passing portion 400). Therefore, the portion close to the head of the screw 600 and the portion close to the tip are positioned on opposite sides (see FIG. 7B), so that the heat dissipating fins are not displaced in the horizontal and vertical directions. 500 can be screwed in a stable state.

  As shown in FIG. 7, when the radiating fin 500 is attached to the upper surface 210 b of the main body 210, a high heat radiating effect can be obtained as in the case where the radiating fin 500 is attached to the rear surface 210 c of the main body 210. This is because when the radiating fin 500 is attached to the upper surface 210b of the main body 210, the radiating fin-side attachment surface 510 has bent plane portions 111d, 111e having substantially the same area as the mounting portions 111a, 111b and the mounting portions 112a, 112b, and This is because it is attached in a state of facing the bent flat portions 112d and 112e.

  That is, the bending lengths k and k ′ of the bent flat portions 111d and 111e and 112d and 112e are equal to or substantially equivalent to the height h in the direction along the z-axis of the first die pad 111 and the second die pad 112 (see FIG. 3), the side surface of the main body 210 has a square shape, so that the upper surface 210b of the main body 210 has an area equivalent to the back surface 210c of the main body 210 that originally has a large area. .

  As a result, even when the radiating fin 500 is attached to the upper surface 210b of the main body 210 (see FIG. 7), the radiating fin 500 and the bent flat portions 111d, 111e, 112d, and 112e come to face each other over a wide area. As with the case where the heat radiation fin 500 is attached to the back surface 210c of the main body 210, a high heat radiation effect can be obtained.

  As described above, according to the resin-encapsulated semiconductor device 200A according to the first embodiment, the radiating fins 500 can be selectively attached to the back surface 210c or the top surface 210b of the main body 210 (see FIGS. 6 and 7). ). For this reason, it is possible to easily cope with the case where the mounting position of the radiating fin 500 is not attached to the back surface 210c of the main body 210 but to the upper surface 210b of the main body 210. Can increase the degree of freedom in implementation.

  Next, a resin-sealing mold 700 for manufacturing the resin-sealed semiconductor device 200A according to Embodiment 1 will be described.

  8 and 9 are views for explaining a resin-sealing mold 700 for manufacturing the resin-sealed semiconductor device 200A according to the first embodiment. FIG. 8 shows the relationship between the resin-encapsulated semiconductor device 200A and the resin-encapsulating mold 700 when the front surface 210d of the main body 210 is viewed from an oblique direction. FIG. 9 shows the relationship between the resin-encapsulated semiconductor device 200A and the resin-encapsulating mold 700 when the back surface 210c of the main body 210 is viewed obliquely from below.

  The resin sealing mold 700 is constituted by a pair of molds (referred to as a first mold 710 and a second mold 720). The first mold 710 is a mold corresponding to the front 210d side when the main body 210 is divided into the front 210d side and the back 210c side, and the second mold 720 includes the main body 210 on the front 210d side and the back surface. This is a mold corresponding to the back surface 210c side when divided into the 210c side. 8 and 9 show a state in which the first mold 710 and the second mold 720 are removed after the resin injected into the resin sealing mold 700 is cured. In the manufacturing process of the resin-encapsulated semiconductor device 200A, this corresponds to the process shown in FIG. In FIG. 2D, the first mold 710 and the second mold 720 are not shown.

  The first mold 710 and the second mold 720 will be described with reference to FIGS. The first mold 710 has a mold casing 711 having a space for injecting resin therein, and the second mold 720 similarly has a mold casing having a space for injecting resin therein. It has a body 721. 8 and 9, the lower surface 210a of the main body 210 is molded out of the inner surfaces of the mold housing 711 of the first mold 710 and the mold housing 721 of the second mold 720. The first mold 710 and the second mold 720 are arranged such that the surfaces are the lower surface molding surfaces 714 and 724, respectively, and the lower surface molding surfaces 714 and 724 are horizontal (on the xy plane) and face upward (in the direction of the arrow z). The state of being placed is shown.

  First, the second mold 720 will be described with reference to FIG. As shown in FIG. 8, the second mold 720 has a protruding portion 722 (referred to as a second protruding portion 722) for forming the second threading portion 400 in the main body 210.

A flat surface 722a is formed at the upper end of the second protrusion 722, and a tip curved surface 722c having a semicircular shape is formed at the tip of the second protrusion 722. The distal curved surface 722c is formed from the flat surface 722a formed at the upper end of the second projecting portion 722 to a predetermined position in the direction of the arrow z ′ along the z axis.
In addition, a lower end curved surface 722b having a semicircular shape is formed at the lower end of the second projecting portion 722. The lower end curved surface 722b is formed from the base of the second protrusion 722 to a predetermined position in the arrow y direction along the y axis. An inclined surface 722d that is inclined at a predetermined angle (for example, 45 degrees) is formed between the distal curved surface 722c and the lower curved surface 722b.

  On the other hand, as shown in FIG. 9, the first mold 710 has a protruding portion 712 (referred to as a first protruding portion 712) for forming the first screw passage portion 300 in the main body 210.

  A flat surface 712a is formed at the lower end of the first projecting portion 712, and an upper end curved surface 712b having a semicircular shape is formed at the upper end of the first projecting portion 712. The upper end curved surface 712b is formed from the base of the first protrusion 712 to a predetermined position along the y axis in the direction of the arrow y '.

  In addition, a tip curved surface 712c having a semicircular shape is formed at the tip of the first protrusion 712. The distal curved surface 712c is formed from the flat surface 712a formed at the lower end of the first projecting portion 712 to a predetermined position in the arrow z direction along the z axis. An inclined surface 712d that is inclined at the same angle (45 degrees in this case) as the inclined surface 722d of the second protrusion 722 is formed between the upper end curved surface 712b and the tip curved surface 712c. The inclined surface 712d and the inclined surface 722d have shapes corresponding to each other.

  In addition, in order to distinguish the tip curved surface 712c formed in the 1st protrusion part 712 and the tip curved surface 722c formed in the 2nd protrusion part 722, it forms in the 1st protrusion part 712. The tip curved surface 712c may be referred to as “first tip curved surface 712c”, and the tip curved surface 722c formed on the second protrusion 722 may be referred to as “second tip curved surface 722c”. Similarly, in order to easily distinguish the inclined surface 712d formed in the first protrusion 712 and the inclined surface 722d formed in the second protrusion 722, the inclination formed in the first protrusion 712. The surface 712d may be referred to as “first inclined surface 712d”, and the inclined surface 722d formed on the second protrusion 722 may be referred to as “second inclined surface 722d”.

  FIG. 10 is an enlarged cross-sectional view showing the relationship between the first protrusion 712 and the second protrusion 722 when the first mold 710 and the second mold 720 are brought into contact with each other. FIG. 10 is a cross-sectional view taken along the line ee when the first mold 710 and the second mold 720 are correctly butted in FIG. 8, and the state before the resin is injected is shown in FIG. It is shown. In FIG. 10, the lead frame 100A and the like in the resin-encapsulated semiconductor device 200A are not shown.

  As shown in FIG. 10, when the first mold 710 and the second mold 720 are brought into contact with each other, the first inclined surface 712d of the first protruding portion 712 and the second inclined surface 722d of the second protruding portion 722 Close. In addition, when the first mold 710 and the second mold 720 are brought into contact with each other, the second protrusion 722 provided in the second mold 720 is a die pad (first die pad 111) of the lead frame 100A. And no contact with the second die pad 112). This is because the space portion S is formed in the first die pad 111 and the second die pad 112 as described in FIG.

  In a state as shown in FIG. 10, after injecting resin into the space formed by the mold housing 711 and the mold housing 721 and curing the injected resin, the first mold 710 and the second mold When the mold 720 is removed as shown in FIGS. 8 and 9, the main body 210 can be molded as shown in FIG. Then, the resin-sealed semiconductor device 200A as shown in FIG. 2E can be manufactured by separating the tie bar 130 and the auxiliary bar 140 with a punch die (not shown).

  That is, the curved portion 311 (see FIGS. 4B and 5A) of the first threading portion 300 is formed by the upper end curved surface 712b of the first protrusion 712 in the first mold 710. In addition, the curved portion 321 (see FIGS. 4B and 5D) of the first screw threaded portion 300 can be formed by the first tip curved surface 712c of the first projecting portion 712. Further, the curved portion 411 (see FIGS. 4B and 5B) of the second screw threaded portion 400 can be formed by the lower end curved surface 722b of the second protrusion 722 in the second mold 720. In addition, the curved portion 421 (see FIGS. 4B and 5C) of the second screw threaded portion 400 can be formed by the second tip curved surface 722c of the second projecting portion 722.

  By the way, when the first mold 710 and the second mold 720 are separated after the resin is cured in the resin sealing mold 700, the first mold 710 is moved in the direction indicated by the arrow y in FIGS. The first mold 710 and the second mold 720 can be separated from each other by shifting the second mold 720 in the direction of the arrow y ′ in FIGS.

  The first mold 710 and the second mold 720 can be separated after the resin is cured because the resin sealing mold 700 is configured as shown in FIGS. Because it is. That is, when the first mold 710 and the second mold 720 are separated from each other, the first projecting portion 712 and the second projecting portion 722 have a shape that does not catch the cured resin. It is. When the main body 210 is removed from one mold after the first mold 710 and the second mold 720 are separated from each other, an extrusion pin is used.

[Embodiment 2]
FIG. 11 is a view for explaining the resin-encapsulated semiconductor device 200B according to the second embodiment. FIG. 11A is a perspective view showing the appearance of the resin-encapsulated semiconductor device 200B according to the second embodiment, and FIG. 11B is a lead frame used for the resin-encapsulated semiconductor device 200B according to the second embodiment. It is a perspective view which shows 100B. Note that the lead frame 100B shown in FIG. 11B is in a state where tie bars (not shown) and auxiliary bars (not shown) are removed from the lead frame 100B.

  The resin-encapsulated semiconductor device 200B according to the second embodiment basically has the same configuration as that of the resin-encapsulated semiconductor device 200A according to the first embodiment, but includes two semiconductor elements 151 and 154. The point is that it is a stationary semiconductor device 200B, which is different from the resin-encapsulated semiconductor device 200A according to the first embodiment.

  That is, the resin-encapsulated semiconductor device 200B according to the second embodiment is a resin-encapsulated semiconductor device 200B including two semiconductor elements (for example, diodes) 151 and 154, and includes one first outer lead. The outer lead 121, the second outer leads 123 and 124 as the second outer lead, and the die pad 180 are provided. In addition, the resin-encapsulated semiconductor device 200B according to the second embodiment includes a first connection connector 171 and a second connection connector 172 as connection connectors.

  The first connection connector 171 has one end connected to one semiconductor element 151 and the other end connected to the connection portion 123 a of one second outer lead 123 out of the two second outer leads 123 and 124. Then, the semiconductor element 151 and the second outer lead 123 are electrically connected.

  The second connection connector 172 has one end connected to the other semiconductor element 154 and the other end connected to the connection portion 124a of the other second outer lead 124 out of the two second outer leads 123 and 124. Then, the semiconductor element 154 and the second outer lead 124 are electrically connected.

  Also in the resin-encapsulated semiconductor device 200B according to the second embodiment, the main body 210 includes the first screw threaded portion 300 and the second screw threaded portion 400 in the same manner as the resin sealed semiconductor device 200A according to the first embodiment. Is provided. However, in the resin-encapsulated semiconductor device 200B according to the second embodiment, the main body 210 has a lateral direction (a direction along the x axis) rather than an outer lead (for example, the first outer lead 121) present at the end. The “extrusion part” that protrudes is formed, and the first screw passage part 300 and the second screw passage part 400 are provided in the “extension part”.

  Note that the structures of the first screw passage portion 300 and the second screw passage portion 400 are the same as those of the resin-encapsulated semiconductor device 200A according to the first embodiment. Further, the position of the first insertion path Wa (not shown in FIG. 11; see FIG. 5) formed by the first screw passage part 300 and the second screw passage part 400 in the y-axis direction and the first axis. The position in the z-axis direction of the central axis Pb of the two insertion passages Wb (not shown in FIG. 11; see FIG. 5) is the same as that of the resin-encapsulated semiconductor device 200A according to the first embodiment.

  Also in the resin-encapsulated semiconductor device 200B according to the second embodiment, the die pad 180 bends the end portion on the upper surface 210b side of the main body 210 in the mounting portion 180a by 90 degrees toward the front surface 210d, whereby the bent flat portion 180b. have. Like the resin-encapsulated semiconductor device 200A according to the first embodiment, the bent front end portion of the bent flat portion 180b is at least more than the central axis Pa of the first insertion passage Wa (see FIG. 5C). It is preferably set so as to be located on the front surface 210d side. For this reason, the bending length k of the bent plane portion 180b is equal to the height h of the rising portion in the direction along the z-axis of the die pad 180, or the resin-encapsulated semiconductor device 200A according to the first embodiment. It is almost equivalent.

  FIG. 12 is a diagram illustrating a state in which the radiation fins 500 are attached to the resin-encapsulated semiconductor device 200B according to the second embodiment. 12A is a view showing a state in which the radiating fins 500 are attached to the back surface 210c of the main body 210, and FIG. 12B is a view showing a state in which the radiating fins 500 are attached to the upper surface 210b of the main body 210.

  As described above, also in the resin-encapsulated semiconductor device 200B according to the second embodiment, the radiating fins 500 can be selectively attached to the back surface 210c or the top surface 210b of the main body 210 as shown in FIG. Thereby, the degree of freedom of mounting of the resin-encapsulated semiconductor device 200B can be increased.

  Further, even when the radiating fin 500 is attached to the upper surface 210b of the main body 210, the radiating fin 500 and the bent flat portion 180b are opposed to each other in a wide range, so that the same as when the radiating fin 500 is attached to the back surface 210c. In addition, a high heat dissipation effect can be obtained. This is because the bent length k of the bent flat portion 180b is equal to the height h of the rising portion in the direction along the z-axis of the die pad 180, as in the resin-encapsulated semiconductor device 200A according to the first embodiment. This is because they are almost equivalent.

  The resin sealing mold used when manufacturing the resin sealing semiconductor device 200B according to the second embodiment is the resin sealing mold 700 used in the resin sealing semiconductor device 200A according to the first embodiment. Basically, the same configuration can be used. However, in the resin-encapsulated semiconductor device 200B according to the second embodiment, the positions of the first screw threaded portion 300 and the second screw threaded portion 400 are different from those of the resin-encapsulated semiconductor device 200A according to the first embodiment. The first protrusion 712 of the first mold 710 and the second protrusion 722 of the second mold 720 are not shown, but are resin-sealed used when manufacturing the resin-sealed semiconductor device 200A according to the first embodiment. It is provided at a position different from the mold 700 for use.

[Embodiment 3]
FIG. 13 is a view for explaining the resin-encapsulated semiconductor device 200C according to the third embodiment. FIG. 13A is a perspective view showing an appearance of the resin-encapsulated semiconductor device 200C according to the third embodiment, and FIG. 13B is a lead frame used in the resin-encapsulated semiconductor device 200C according to the third embodiment. It is a perspective view which shows 100C. Note that the lead frame 100C shown in FIG. 13B is in a state where tie bars (not shown) and auxiliary bars (not shown) are removed from the lead frame 100C.

  The resin-encapsulated semiconductor device 200C according to the third embodiment has basically the same configuration as the resin-encapsulated semiconductor device 200A according to the first embodiment, but the resin-encapsulated semiconductor device 200C is a three-terminal type. The resin-encapsulated semiconductor device 200 </ b> C including the semiconductor element 190 is different from the resin-encapsulated semiconductor device 200 </ b> A according to the first embodiment.

  That is, the resin-encapsulated semiconductor device 200C according to the third embodiment is a resin-encapsulated semiconductor device including a three-terminal semiconductor element 190 (for example, a power MOSFET, an IGBT, a thyristor, etc.), and the first outer lead. As a first outer lead 121, two second outer leads 123 and 124 as a second outer lead, and a die pad 180. Further, the resin-encapsulated semiconductor device 200C according to the third embodiment includes a first connection connector 171 and a second connection connector 172 as connection connectors.

  The first connection connector 171 has one end connected to the first region of the semiconductor element 190 and the other end connected to the connection portion 123 a of one second outer lead 123 out of the two second outer leads 123 and 124. The first region of the semiconductor element 190 and the second outer lead 123 are electrically connected.

  The second connecting connector 172 has one end connected to a second region different from the first region of the semiconductor element 190 and the other end of the second outer leads 123 and 124, the other second outer outer. The second region of the semiconductor element 190 and the second outer lead 124 are electrically connected to the connection portion 124 a of the lead 124.

  Also in the resin-encapsulated semiconductor device 200C according to the third embodiment, the main body 210 includes a first screw passage portion 300 and a second screw passage portion 400 that are the same as those of the resin-encapsulated semiconductor device 200B according to the second embodiment. Is provided. That is, in the resin-encapsulated semiconductor device 200C according to the third embodiment, as in the resin-encapsulated semiconductor device 200B according to the second embodiment, the main body 210 has outer leads (eg, first outer A “protruding portion” that protrudes laterally (in the direction along the x axis) from the lead 121) is formed, and the first screw passing portion 300 and the second screw passing portion 400 are provided in the “protruding portion”. I am trying to provide it.

  Also in the resin-encapsulated semiconductor device 200C according to the third embodiment, the die pad 180 bends the end portion on the upper surface 210b side of the main body 210 in the mounting portion 180a by 90 degrees toward the front surface 210d, whereby the bent flat portion 180b. Is formed. Like the resin-encapsulated semiconductor device 200A according to the first embodiment, the bent front end portion of the bent flat portion 180b is at least more than the central axis Pa of the first insertion passage Wa (see FIG. 5C). It is preferable to set so that it may be located in the front 210d side. For this reason, the bending length k of the bending plane portion 180b is equal to or substantially the same as the height h in the direction along the z-axis of the die pad 180, like the resin-encapsulated semiconductor device 200A according to the first embodiment. .

  When attaching the radiation fins 500 in the resin-encapsulated semiconductor device 200C according to the third embodiment, it can be performed in the same manner as in the resin-encapsulated semiconductor device 200B according to the second embodiment (see FIG. 12). The same effects as those of the resin-encapsulated semiconductor device 200B according to the second embodiment are obtained.

  The resin sealing mold used when manufacturing the resin sealing semiconductor device 200C according to the third embodiment is the resin sealing mold 700 used in the resin sealing semiconductor device 200A according to the first embodiment. Basically, the same configuration can be used. However, in the resin-encapsulated semiconductor device 200C according to the third embodiment, the positions of the first screw threaded portion 300 and the second screw threaded portion 400 are implemented as in the resin-sealed semiconductor device 200B according to the second embodiment. Since it is different from the resin-encapsulated semiconductor device 200A according to the first embodiment, the first protrusion 712 of the first mold 710 and the second protrusion 722 of the second mold 720 are not shown, but the resin according to the first embodiment. It is provided at a position different from the resin sealing mold 700 used when manufacturing the sealing semiconductor device 200A.

[Embodiment 4]
FIG. 14 is a view for explaining the configuration of a resin-encapsulated semiconductor device 200D according to the fourth embodiment. FIG. 14A is a perspective view of the front surface 210d of the resin-encapsulated semiconductor device 200D viewed obliquely from the lateral direction, and FIG. 14B illustrates the rear surface 210c of the resin-encapsulated semiconductor device 200D obliquely downward. It is a perspective view at the time of seeing from. Similarly to the resin-encapsulated semiconductor device 200A according to the first embodiment, the resin-encapsulated semiconductor device 200D according to the fourth embodiment is also a single in-line bridge diode. FIG. 14 shows a state in which the radiating fin 500 is not attached.

  Similarly to the resin-encapsulated semiconductor device 200A according to the first embodiment, the resin-encapsulated semiconductor device 200D according to the fourth embodiment has a main body 210 and outer leads (first outer leads) of the lead frame 100D (see FIG. 16). 121, 122 and second outer leads 123, 124). The main body 210 has a square side surface shape (a shape viewed from the direction along the x axis). The manufacturing process of the resin-encapsulated semiconductor device 200D according to the fourth embodiment can be manufactured by the same process (see FIG. 2) as the resin-encapsulated semiconductor device 200A according to the first embodiment. The description is omitted.

  The resin-encapsulated semiconductor device 200D according to the fourth embodiment is significantly different from the resin-encapsulated semiconductor device 200A according to the first embodiment in the structure of the first screw passage portion 300 and the second screw passage portion 400. Note that the first screw passage portion and the second screw passage portion in the resin-encapsulated semiconductor device 200D according to the fourth embodiment will be described as “first screw passage portion 300D” and “second screw passage portion 400D”.

  FIG. 15 is a view of the first screw passage portion 300D and the second screw passage portion 400D in the resin-encapsulated semiconductor device 200D according to the fourth embodiment when viewed from each direction. FIG. 15A is a view of the front surface 210d of the main body 210, and FIG. 15B is a view of the back surface 210c of the main body 210. 15C is a view of the upper surface 210b of the main body 210, and FIG. 15D is a view of the lower surface 210a of the main body 210.

  15 (a) and 15 (b), the upper surface 210b is shown to be positioned on the upper side of the drawing, and in FIGS. 15 (c) and 15 (d), the front surface 210d is shown. It is shown to be located on the left side.

  As shown in FIGS. 14 and 15, the first threading portion 300D is formed as a notch groove 351 in which the front surface 210d is cut out by a predetermined width m from the upper surface 210b to the lower surface 210a. The upper surface 210b has a U-shape having a semicircular curved portion 352 and an opening 353 (see FIGS. 5C and 15D). In FIG. 15C and FIG. 15D, the opening 353 is indicated by a thin broken ellipse frame, which indicates that the opening 353 is located within the broken line frame. Is.

  The curved portion 352 is positioned between the front side 210d side edge of the upper surface 210b of the main body 210 and the rear side 210c side edge, and the opening 353 is the end of the upper surface 210b of the main body 210 on the front surface 210d side. Located on the side. Further, the curved portion 352 and the opening 353 are formed up to the lower surface 210a of the main body 210 (see FIG. 5A), and the curved portion 352 is used as the first insertion passage Wa.

  Here, in the resin-encapsulated semiconductor device 200D according to the fourth embodiment, the center Pc of the bending portion 352 is, for example, a position that is 1/2 the dimension in the y-axis direction of the main body 210 (the front surface 210d and the back surface 210c of the main body 210 For example, an intermediate position), and a position that is, for example, a half of the dimension of the main body 210 in the x-axis direction. The center Pc of the bending portion 352 is the center Pc of the virtual circle when the bending portion 352 is extended to the opposite side (front surface 210d side) and considered as a virtual circle. The diameter of the virtual circle forming the curved portion 352 is the same as the width m of the notch groove 351, and the diameter (also referred to as the diameter m) is such that the screw 600 for fixing the heat radiation fin 500 can pass therethrough. And

  On the other hand, the second screw threaded portion 400D is formed as a through hole 451 that penetrates from the curved portion 352 of the notch groove 351 to the back surface 210c, and the through hole 451 is used as the second insertion hole Wb, and the front surface 210d or the back surface 210c. When it sees, it is circular (refer FIG. 15 (a), (b)). The diameter of the through hole 451 is the same as the width m of the notch groove 351.

  In addition, in the resin-encapsulated semiconductor device 200D according to the fourth embodiment, the position of the central axis Pd of the through hole 451 is, for example, a position that is 1/2 the dimension in the z-axis direction of the main body 210 (the upper surface 210b For example, an intermediate position between the lower surface 210a and the position of the main body 210 in the x-axis direction, for example, a half position (for example, an intermediate position between both side surfaces 210e of the main body 210).

  Then, a center line L5 (see FIG. 15A) along the z axis passing through the center Pc (see FIG. 15C) of the curved portion 352 of the first screw passing portion 300D, and the second screw passing portion. It is orthogonal to the center line L6 (see FIG. 15C) along the y axis that coincides with the central axis Pd (see FIG. 15A) of the through hole 451 of 400D. The positions of the center Pc of the curved portion 352 and the center axis Pd of the through hole 451 are such that the center line L5 passing through the center Pc of the curved portion 352 and the center line L6 coinciding with the center axis Pd of the through hole 451 are orthogonal to each other. If set, the positions may be shifted slightly along the x-axis, y-axis, and z-axis.

  As described above, the curved portion 352 of the first screw passage portion 300D and the through hole 451 of the second screw passage portion 400D in the main body 210 are provided at such positions, and the position of the female screw portion 500a in the radiating fin 500 is as described above. Since the heat dissipating fin 500 is mounted on the rear surface 210c or the upper surface 210b of the main body 210, the heat dissipating fin 500 can be mounted in a stable state. Can do. In the main body 210, the screwing position when the radiating fin 500 is attached to the back surface 210 c or the top surface 210 b of the main body 210 is approximately the center of the back surface 210 c or the top surface 210 b. Moreover, in the radiation fin 500, it is the center of the radiation fin side attachment surface 510. FIG.

Next, a lead frame 100D used for the resin-encapsulated semiconductor device 200D according to the fourth embodiment will be described. Since the configuration of the lead frame 100D is basically the same as that of the lead frame 100A used in the resin-encapsulated semiconductor device 200A according to the first embodiment, the same parts are denoted by the same reference numerals.
It is.

FIG. 16 is a view for explaining the first die pad 111 and the second die pad 112 of the lead frame 100D in the resin-encapsulated semiconductor device 200D according to the fourth embodiment.
As shown in FIG. 16, the first die pad 111 has an end on the upper surface 210b side of the main body 210 in the mounting portion 111a of the mounting portions 111a and 111b for mounting the semiconductor elements 151 and 152 on the front 210d side (y The bent flat portion 111d is formed by bending 90 degrees in the axial direction. Further, the second die pad 112 is formed by bending the end portions on the upper surface 210b side of the main body 210 in the mounting portions 112a and 112b for mounting the semiconductor elements 153 and 154 by 90 degrees to the front 210d side (y-axis direction), respectively. Bent flat portions 112d and 112e are formed. In addition, the bending length of the bending plane portions 111d, 112d, and 112e is “k”.

  The bending length k is such that the bending front ends of the bending plane portions 111d, 112d, and 112e are at least the front of the main body 210 than the center Pc (see FIG. 15C) of the bending portion 352 in the first threading portion 300. It is preferable to set so as to be located on the 210d side. In the resin-encapsulated semiconductor device 200D according to the fourth embodiment, the bending length k is the height h (see FIG. 3) of rising portions in the z-axis direction of the first die pad 111 and the second die pad 112. Equivalent or almost equivalent.

  As described above, the bending length k is equal to or substantially equal to the height h (see FIG. 3) of the rising portions in the z-axis direction of the first die pad 111 and the second die pad 112. When the element or the like is resin-sealed, the side surface shape of the main body 210 can be a square shape.

  By making the side surface shape of the main body 210 into a square shape, the upper surface 210b of the main body 210 has an area equivalent to that of the back surface 210c of the main body 210 which originally has a large area.

  In the lead frame 100A in the resin-encapsulated semiconductor device 200A according to the first embodiment, the ends of the bent flat portions 112d and 112e of the second die pad 112 are connected by the second connecting portion 112c. In the lead frame 100D in the resin-encapsulated semiconductor device 200D according to No. 4, the rear ends of the bent flat portions 112d and 112e of the second die pad 112 are connected by the second connecting portion 112c, and the bent flat portions 112d and 112e The tips are spaced apart from each other. This is because the main body 210 of the resin-encapsulated semiconductor device 200D according to the fourth embodiment has a notch groove 351 between the lower surface 210a and the upper surface 210b of the main body 210 in the front surface 210d of the main body 210 as shown in FIG. It is because it is necessary to form.

  In addition, spaces S1 and S2 are formed in the die pads (first die pad 111 and second die pad 112) of the lead frame 100D. The space portions S1 and S2 are the first protrusions provided on the die pad and the first mold 810 of the resin sealing mold 800 (see FIGS. 19 and 20) for forming the main body 210. 812 and the second mold 820 are for avoiding contact with the second protrusion 822.

  By forming such spaces S1 and S2, when forming the main body 210 using the resin sealing mold 800, die pads (first die pad 111 and second die pad) constituting the lead frame 100D are formed. It is possible to prevent the die pad 112) from coming into contact with the first protrusion 812 provided on the first mold 810 and the second protrusion 822 provided on the second mold 820. Accordingly, the die pads (first die pad 111 and second die pad 112) can be smoothly installed in the resin sealing mold 800.

  FIG. 17 is a view for explaining a case where the radiation fins 500 are attached to the back surface 210c of the main body 210 in the resin-encapsulated semiconductor device 200D according to the fourth embodiment. FIG. 17A is a perspective view, and FIG. 17B is an enlarged cross-sectional view for explaining the relationship between the first screw passage portion 300D and the second screw passage portion 400D and the screw 600. FIG.

  When attaching the radiating fins 500 to the back surface 210c of the main body 210, the radiating fins 500 are attached to the back surface 210c of the main body 210 using the through holes 451 as the second insertion passages Wb as shown in FIG. That is, with the radiating fin 500 in contact with the back surface 210c of the main body 210, the tip of the screw 600 is changed from the first screw passage portion 300D to the through hole 451 of the second screw passage portion 400D (see FIG. 17B). Then, the heat dissipating fin 500 is fixed by projecting from the back surface 210c of the main body 210 and inserting the screw 600 into the female screw portion 500a of the heat dissipating fin 500 and screwing it. Thereby, the radiation fin 500 can be attached to the back surface 210 c of the main body 210.

  As shown in FIG. 17, when the heat radiating fins 500 are attached to the back surface 210c of the main body 210, the heat radiating fins 500 are opposed to the first die pad 111 and the second die pad 112 in a wide area, so that a high heat radiating effect is obtained. This is because, as shown in FIG. 16, the first die pad 111 and the second die pad 112 located on the back surface 210c of the main body 210 have a large area, and the radiating fin 500 has such a large area. By facing the first die pad 111 and the second die pad 112 having a high heat dissipation effect.

  FIG. 18 is a view for explaining a case where the radiation fins 500 are attached to the upper surface 210b of the main body 210 in the resin-encapsulated semiconductor device 200D according to the fourth embodiment. FIG. 18A is a perspective view, and FIG. 18B is an enlarged cross-sectional view shown for explaining the relationship between the first screw passage portion 300D, the second screw passage portion 400D, and the screw 600.

  When attaching the radiating fin 500 to the upper surface 210b of the main body 210, as shown in FIG. 18, the radiating fin 500 is attached to the upper surface 210b of the main body 210 using the curved portion 352 of the notch groove 351 as the first insertion path Wa. . That is, with the radiating fin 500 placed on the upper surface 210b of the main body 210, the tip of the screw 600 is passed along the curved portion 352 of the notch groove 351 in the first screw passage portion 300D of the main body 210. Thereafter, the heat dissipating fin 500 is fixed by projecting from the upper surface 210b of the main body 210 and inserting and screwing the tip end portion of the screw 600 into the female screw portion 500a of the heat dissipating fin 500. Thereby, the radiation fin 500 can be attached to the upper surface 210 b of the main body 210.

  As shown in FIG. 18, when the radiating fin 500 is attached to the upper surface 210 b of the main body 210, a high heat radiating effect can be obtained as in the case where the radiating fin 500 is attached to the rear surface 210 c of the main body 210. This is because when the radiating fin 500 is attached to the upper surface 210b of the main body 210, the radiating fin-side attachment surface 510 has bent plane portions 111d, 111e having substantially the same area as the mounting portions 111a, 111b and the mounting portions 112a, 112b, and This is because it is attached in a state of facing the bent flat portions 112d and 112e.

  That is, the bending length k of the bending plane portion 111d and the bending plane portions 112d and 112e is equal to or substantially equal to the height h in the direction along the z axis of the first die pad 111 and the second die pad 112 (see FIG. 16). ), The side surface of the main body 210 has a square shape, whereby the upper surface 210b of the main body 210 has an area equivalent to the back surface 210c of the main body 210 that originally has a large area.

  As a result, even when the radiating fin 500 is attached to the upper surface 210b of the main body 210 (see FIG. 18), the radiating fin 500 and the bent flat portions 111d, 112d, and 112e face each other over a wide area. As in the case where the fins 500 are attached to the back surface 210c of the main body 210, a high heat dissipation effect can be obtained.

  As described above, according to the resin-encapsulated semiconductor device 200D according to the fourth embodiment, the radiating fins 500 can be selectively attached to the back surface 210c or the top surface 210b of the main body 210 (see FIGS. 17 and 18). ). For this reason, it is possible to easily cope with the case where the mounting position of the radiation fin 500 is not attached to the back surface 210c of the main body 210 but the upper surface 210b of the main body 210, and the resin-encapsulated semiconductor device 200D is mounted on the substrate. Can increase the degree of freedom in implementation.

  Next, a resin sealing mold 800 for manufacturing the resin sealed semiconductor device 200D according to the fourth embodiment will be described.

  19 and 20 are views for explaining a resin sealing mold 800 used when manufacturing the resin sealing semiconductor device 200D according to the fourth embodiment. 19 shows the relationship between the resin-encapsulated semiconductor device 200D and the resin-encapsulating mold 800 when the front surface 210d of the main body 210 is viewed from an oblique direction, and FIG. 20 shows the rear surface 210c of the main body 210 obliquely. The relationship between the resin-encapsulated semiconductor device 200D and the resin-encapsulating mold 800 when viewed from the direction is shown.

  The resin sealing mold 800 is configured by a pair of molds (referred to as a first mold 810 and a second mold 820). The first mold 810 is a mold corresponding to the front 210d side when the main body 210 is divided into the front 210d side and the back 210c side, and the second mold 820 includes the main body 210 on the front 210d side and the back surface. This is a mold corresponding to the back surface 210c side when divided into the 210c side. 19 and 20 show a state where the first mold 810 and the second mold 820 are removed after the resin injected into the resin sealing mold 800 is cured.

  The first mold 810 and the second mold 820 will be described with reference to FIGS. 19 and 20. The first mold 810 has a mold casing 811 having a space for injecting resin therein, and the second mold 820 similarly has a mold casing having a space for injecting resin therein. It has a body 821. 19 and 20, the lower surface 210a of the main body 210 is molded out of the inner surfaces of the mold housing 811 of the first mold 810 and the mold housing 821 of the second mold 820. The first mold 810 and the second mold 820 are arranged such that the surfaces are lower surface molding surfaces 814 and 824, respectively, and the lower surface molding surfaces 814 and 824 are horizontal (on the xy plane) and face upward (in the direction of the arrow z). The state of being placed is shown.

  First, the second mold 820 will be described with reference to FIG. As shown in FIG. 19, the second mold 820 has a protruding portion 822 (referred to as a second protruding portion 822) for forming the second screw threaded portion 400D. The second protrusion 822 has a tip surface 822a formed as a circular columnar protrusion, and protrudes along the y-axis. Hereinafter, the second protrusion 822 may be referred to as a columnar protrusion 822.

  On the other hand, as shown in FIG. 20, the first mold 810 has a protruding portion 812 (referred to as a first protruding portion 812) for forming the first threading portion 300D. A curved surface 812a having a semicircular shape is formed from the upper surface to the lower surface inside the mold housing 811 along the z axis at the tip of the first projecting portion 812. Further, the curved surface 812a has a columnar protrusion 813 (auxiliary) having a tip surface 813a having a shape corresponding to the tip surface 822a (referred to as a column tip surface 822a) of the columnar protrusion 822 of the second mold 820. Projecting portion 813 is formed.

  When the first mold 810 and the second mold 820 configured in this manner are brought into contact with each other, the front end surface 813a of the auxiliary protrusion 813 formed on the curved surface 812a of the first mold 810, The cylindrical tip surface 822a of the cylindrical protrusion 822 in the two mold 820 is in close contact.

  FIG. 21 is an enlarged cross-sectional view showing the relationship between the first protrusion 812 and the second protrusion 822 when the first mold 810 and the second mold 820 are brought into contact with each other. 21 is a cross-sectional view taken along the line ff when the first mold 810 and the second mold 820 are brought into contact with each other in FIG. 19, and shows a state before the resin is injected. Has been. In FIG. 21, the lead frame 100D and the like in the resin-encapsulated semiconductor device 200D are not shown.

  As shown in FIG. 21, when the first mold 810 and the second mold 820 are brought into contact with each other, the front end surface 813a of the auxiliary protruding portion 813 formed on the curved surface 812a of the first protruding portion 812, The cylindrical front end surface 822a of the second protrusion 822 (columnar protrusion 822) is in close contact.

  Further, when the first mold 810 and the second mold 820 are brought into contact with each other, the first projecting portion 812 and the second projecting portion 822 are the die pads (the first die pad 111 and the second die pad) of the lead frame 100D. 112). This is because the space portions S1 and S2 are formed in the first die pad 111 and the second die pad 112 as described in FIG.

  In a state as shown in FIG. 21, after injecting resin into the space formed by the mold casing 811 and the mold casing 821 and curing the injected resin, the first mold 810 and the second mold When the mold 820 is separated as shown in FIGS. 19 and 20, the main body 210 can be molded. Then, the resin-sealed semiconductor device 200D can be manufactured by separating the tie bar 130 and the auxiliary bar 140 (both see FIG. 2) with a punch die (not shown).

  In the main body 210 of the resin-encapsulated semiconductor device 200D manufactured in this way, the first threading portion 300D can be formed by the first protrusion 812 of the first mold 810, and the first protrusion The second screw threaded portion 400D (through hole 451) is formed by the auxiliary protruding portion 813 formed on the curved surface 812a of the portion 812 and the second protruding portion 822 (columnar protruding portion 822) of the second mold 820. can do.

  By the way, when the first mold 810 and the second mold 820 are separated after the resin is cured in the resin sealing mold 800, the first mold 810 is moved in the direction of the arrow y in FIGS. 19 and 20. The first mold 810 and the second mold 820 can be separated from each other by shifting the second mold 820 in the direction of the arrow y ′ in FIGS. 19 and 20.

  Thus, after the resin is cured, the first mold 810 and the second mold 820 can be separated from each other because the resin sealing mold 800 has a configuration as shown in FIGS. 19 and 20. It is because it has become. That is, when the first mold 810 and the second mold 820 are separated along the respective removal directions (the first mold 810) in the arrow y direction and the second mold 820 in the arrow y ′ direction, This is because the first projecting portion 812 and the second projecting portion 822 have a shape that does not catch the cured resin. When the main body 210 is removed from one mold after the first mold 810 and the second mold 820 are separated from each other, an extrusion pin is used.

  In the fourth embodiment, the resin-encapsulated semiconductor device 200D having the same configuration as the resin-encapsulated semiconductor device 200A according to the first embodiment has been described as an example. However, the first screw threaded portion 300D and the second screw are used. The present invention can also be applied to the resin-encapsulated semiconductor device 200B according to the second embodiment and the resin-encapsulated semiconductor device 200C according to the third embodiment by changing the position where the through portion 400D is formed.

[Embodiment 5]
FIG. 22 is a view for explaining the resin-encapsulated semiconductor device 200E according to the fifth embodiment. FIG. 22A is a perspective view when the back surface 210c of the resin-encapsulated semiconductor device 200E is viewed from an oblique direction, FIG. 22B is a perspective view of the radiation fin 500, and FIG. It is a figure which shows the state which attached the radiation fin 500 to the upper surface 210b of the main body 210. FIG.

  The resin-encapsulated semiconductor device 200E according to the fifth embodiment can prevent misalignment when the radiating fins 500 are attached to the main body 210. Note that, in the resin-encapsulated semiconductor device 200E according to the fifth embodiment, the same threading portions as the resin-encapsulated semiconductor device 200D according to the fourth embodiment (the first screwing portion 300D and the second screwing portion 400D). Is provided.

  As shown in FIG. 22, the resin-encapsulated semiconductor device 200 </ b> E according to the fifth embodiment is provided with engaging portions 291 and 292 for preventing misalignment at the upper end corner of the back surface 210 c of the main body 210. Provided on the side of the radiating fin 500 are protrusions 511 and 512 that engage with the respective misalignment prevention engaging portions 291 and 292. In FIG. 22, the same components as those in FIG. 14 are denoted by the same reference numerals.

  It should be noted that the misalignment prevention engaging portions 291 and 292 provided on the main body 210 side and the protrusions 511 and 512 provided on the heat dissipating fin 500 side connect the heat dissipating fin 500 to the back surface 210c or the upper surface 210b of the main body 210. In any case, it is assumed that they are provided in a positional relationship so that they can be shared. Further, assuming that the protrusions 511 and 512 of the radiating fin 500 are engaged with the misalignment prevention engaging portions 291 and 292 of the main body 210, the center Pc of the bending portion 352 or the second screw in the first screw passing portion 300D. The central axis Pd of the through hole 451 of the through portion 400 </ b> D is set in advance so as to necessarily coincide with the central axis of the female screw portion 500 a of the radiating fin 500.

  In such a configuration, when the radiating fin 500 is attached to the upper surface 210b of the main body 210, the protrusions 511 and 512 of the radiating fin 500 are engaged with the misalignment prevention engaging portions 291 and 292 of the main body 210. The heat radiating fins 500 are placed on the main body 210 and screwed with screws 600. On the other hand, when attaching the radiating fin 500 to the back surface 210c of the main body 210, the protrusions 511 and 512 of the radiating fin 500 are positioned on the main body 210 so that the protrusions 511 and 512 of the radiating fin 500 are on the upper surface 210b side of the main body 210. The screws 600 are engaged with the engagement portions 291 and 292 for preventing displacement and screwed with the screws 600.

  When the radiation fin 500 is attached to the main body 210 in this way, the protrusions 511 and 512 of the radiation fin 500 are engaged with the position shift preventing engagement portions 291 and 292 of the main body 210. The movement of the radiating fin 500 is restricted. Thereby, the radiation fin 500 can hold the attachment state with respect to the main body 210 for a long time without being displaced.

  When the radiating fin 500 is attached to the upper surface 210b of the main body 210, the first screw passage portion 300D is a notch groove 351, and the front surface 210d of the main body 210 is an opening, so the screw 600 is the front surface. There is also a possibility that it will shift to the 210d side, and there is a possibility that the radiating fin 500 will fall off the main body 210. However, in the resin-encapsulated semiconductor device 200E according to the fifth embodiment, a structure in which the protrusions 511 and 512 of the radiating fin 500 are engaged with the misalignment prevention engaging portions 291 and 292 provided in the main body 210. Therefore, the radiating fin 500 is not shifted to the front surface 210d side of the main body 210, and the radiating fin 500 is not dropped from the main body 210. Can hold.

  Further, the misalignment prevention engaging portions 291 and 292 provided on the main body 210 and the protrusions 511 and 512 provided on the heat radiating fin 500 serve as positioning of the heat radiating fin 500 when the heat radiating fin 500 is attached to the main body 210. Therefore, the workability when attaching the heat radiation fin 500 can be improved.

  In order to provide the misalignment prevention engaging portions 291 and 292 as shown in FIG. 22 on the back surface 210c of the main body 210, the second mold 820 has a protrusion corresponding to the misalignment prevention engaging portions 291 and 292. A portion (not shown) may be formed. In this case, the misalignment prevention engaging portions 291 and 292 are L-shaped in cross section as shown in FIG. 22, so that the protruding portion can be shaped so as not to be caught by the cured resin. For this reason, after the resin is cured, the first mold 810 and the second mold 820 can be separated.

  The shape of the misalignment prevention engaging portions 291 and 292 provided in the main body 210 is not limited to the L-shaped cross section as shown in FIG. 22, but when the resin sealing mold 800 is removed. The second mold 820 needs to have a shape that does not catch the cured resin. Further, the number of the misalignment prevention engaging portions 291 and 292 is not limited to two.

  Further, the position where the misalignment prevention engaging portions 291 and 292 are provided is not limited to the position shown in FIG. However, in the main body 210 having the first screw passage portion 300D having the opening on the front face 210d side, when the heat radiating fin 500 is attached to the upper surface 210b of the main body 210, the heat radiating fin 500 does not shift to the front face 210d side. In order to do so, it is preferable to provide misalignment prevention engaging portions 291 and 292 so as to restrict the displacement of the radiating fin 500 toward the front face 210d.

  In the fifth embodiment, the case where the radiating fin 500 is attached to the upper surface 210b of the main body 210 and the case where the radiating fin 500 is attached to the rear surface 210c share the misalignment prevention engaging portions 291 and 292. When attaching to the upper surface 210b of the main body 210 and when attaching to the rear surface 210c, dedicated misalignment prevention engaging portions 291 and 292 may be provided on the main body 210, respectively. For example, the misalignment prevention engagement portions 291 and 292 may be provided not only at the upper end corner portion of the back surface 210 c of the main body 210 but also at the lower end corner portion of the back surface 210 c of the main body 210.

  In addition, in FIG. 22, an example in which the misalignment prevention engaging portions 291 and 292 formed in the main body 210 are provided as notches in the main body 210 is shown, but not the notches, A protrusion may be provided on the main body 210. In this case, the radiating fin 500 may be provided with a notch that engages with the protrusion.

  Further, in the fifth embodiment, the case where the same screw passage portions (first screw passage portion 300D and second screw passage portion 400D) as the resin-encapsulated semiconductor device 200D according to the fourth embodiment are provided is illustrated. However, the present invention is also applicable to the resin-encapsulated semiconductor device 200A according to the first embodiment, the resin-encapsulated semiconductor device 200B according to the second embodiment, and the resin-encapsulated semiconductor device 200C according to the third embodiment. However, in the case of the resin-encapsulated semiconductor device 200B according to the second embodiment and the resin-encapsulated semiconductor device 200C according to the third embodiment, the center of the first screw threaded portion 300 and the second screw threaded portion 400 is the center of the main body 210. Therefore, when the radiating fin 500 is attached to the upper surface 210b of the main body 210 and when attached to the rear surface 210c, it is necessary to provide dedicated misalignment prevention engaging portions 291 and 292, respectively.

  The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention. For example, the following modifications are possible.

  (1) In each of the above-described embodiments, the first screw passage portion 300 and the second screw passage portion 400 (in the case of Embodiment 4, the first screw passage portion 300D and the second screw passage portion 400D) are all made of resin. The sealing mold 700 is formed by a resin sealing mold 800 in the case of the embodiment 4, but may be formed by a drilling device such as a drill. For example, as in a conventional resin-encapsulated semiconductor device 900 (see FIG. 24), a screw-through hole H (see FIG. 24) for attaching a radiation fin is provided in the main body 930 by a resin encapsulation process. Alternatively, a vertical threading hole orthogonal to the hole threading hole H (referred to as a horizontal threading hole) may be formed by a drilling device such as a drill.

  FIG. 23 is a diagram showing a configuration of a resin-encapsulated semiconductor device 200F in a case where a screw hole as a screw hole is formed by a drilling device such as a drill. As shown in FIG. 23, in the resin-encapsulated semiconductor device 200F, a horizontal screw hole H1 is provided in the main body 210 as, for example, the first screw thread portion 300 in the first to third embodiments and the vertical direction. Is provided as the second threading portion 400 in the first to third embodiments, for example. In the fourth embodiment, the second threading portion 400D may be formed by a drilling device.

  As described above, when two screw holes H1 and H2 are provided, for example, as in a conventional resin-encapsulated semiconductor device 900 (see FIG. 24), one screw hole H (horizontal screw hole). When H1) is already provided by the resin sealing step, the vertical screw hole H2 orthogonal to the horizontal screw hole H1 is formed by a drill or the like. Also, in the resin sealing process, without providing any screw holes, at the stage where the resin sealing process is completed, both the horizontal screw holes H1 and the vertical screw holes H2 are formed by a drill or the like. You may make it provide newly.

  (2) In Embodiment 1 and Embodiment 4 described above, the resin-encapsulated semiconductor device of the present invention is described using a single in-line bridge diode as the resin-encapsulated semiconductor device. In Embodiment 2 described above, The resin-encapsulated semiconductor device of the present invention will be described using a resin-encapsulated semiconductor device including two semiconductor elements. In the above-described third embodiment, a resin-encapsulated semiconductor device including a three-terminal semiconductor element However, the present invention is not limited to these resin-encapsulated semiconductor devices, and can be applied to other resin-encapsulated semiconductor devices.

  (3) In Embodiment 1 and Embodiment 4 described above, the resin-encapsulated semiconductor device of the present invention is described using a resin-encapsulated semiconductor device having four outer leads, and the above-described Embodiment 2 and 3, the resin-encapsulated semiconductor device of the present invention has been described using a resin-encapsulated semiconductor device having three outer leads, but the present invention is not limited to these resin-encapsulated semiconductor devices. The present invention can also be applied to a resin-encapsulated semiconductor device including two or five or more outer leads.

  (4) In each of the above-described embodiments, a connection connector produced from a plate-like metal member is used as the connection connector. However, the present invention is not limited to this, and a wire connection is used as the connection connector. A connector may be used. In this case, the connection between the semiconductor element and the second outer lead can be connected by wire bonding.

(5) The shapes of the first protrusion 712 of the first mold 710 and the second protrusion 722 of the second mold 720 in the resin sealing mold 700 described in the first embodiment are as shown in FIGS. It is not limited to the shape shown. That is, the shape of the first protrusion 712 of the first mold 710 and the second protrusion 722 of the second mold 720 is such that the first screw as described in the above embodiment is applied to the main body 210 by resin sealing. The through part 300 and the second screw through part 400 can be formed, and the resin is cured when the first mold 710 and the second mold 720 are removed along the respective removal directions after the resin is cured. It is sufficient that the resin does not catch on the resin.
This also applies to the shapes of the first protrusion 812 of the first mold 810 and the second protrusion 822 of the second mold 820 in the resin sealing mold 800 described in the fourth embodiment, and FIG. And it is not restricted to the shape shown in FIG.

  100A, 100B, 100C, 100D ... lead frame, 110 ... semiconductor element mounting portion, 111 ... first die pad, 111d, 111e, 112d, 112e, 180b ... bending flat surface portion, 112 ... Second die pad, 121-124 ... outer leads (first outer lead and second outer lead), 130 ... tie bar, 140 ... auxiliary bar, 151-154, 190 ... semiconductor element, 200A, 200B, 200C, 200D, 200E, 200F: Resin-encapsulated semiconductor device, 210: Main body, 210a: Lower surface of main body, 210b: Upper surface of main body, 210c: Rear surface of main body, 210d ... Front face of the main body, 210e ... Side face of the main body, 291,292 ... Effects for preventing misalignment, 300,3 0D: first threading portion, 310: first U-shaped space, 311, 321, 352, 411, 421 ... curved portion, 320: second U-shaped space, 351 ... notch groove, 400, 400D ... second screw threaded portion, 410 ... third U-shaped space, 420 ... fourth U-shaped space, 451 ... through hole, 500 ... radiation fins, 500a ... female screw part, 510 ... radiation fin side mounting surface, 700,800 ... resin sealing mold, 710,810 ... first mold, 711 , 721, 811, 821 ... mold housing, 712, 812 ... first protrusion, 712 a ... flat surface, 712 b ... upper end curved surface, 712 c ... tip curved surface (first Tip curved surface), 712d ... inclined surface (first inclined surface), 714, 724, 814, 82 ... lower surface molding surface, 720, 820 ... second mold, 722, 822 ... second protrusion, 722a ... flat surface, 722b ... lower end curved surface, 722c ... tip curved Surface (second tip curved surface), 722d ... inclined surface (second inclined surface), 812a ... curved surface, 813 ... auxiliary projection, H1, H2 ... screw through hole, Pa ... The central axis of the first insertion path Wa, Pb: the central axis of the second insertion path Wb, Pc: the center of the curved portion, Pd: the central axis of the through hole, S, S1, S2 ... Space part, Wa ... 1st insertion path, Wb ... 2nd insertion path

Claims (17)

A main body in which a semiconductor element and a semiconductor element mounting portion are sealed with resin;
An outer lead extending in a predetermined direction from the main body toward the outside, and a resin-encapsulated semiconductor device comprising:
The surface on which the outer lead extends is the lower surface of the main body, the back surface is the upper surface of the main body, and the surface on which the radiation fin can be attached between the lower surface and the upper surface is the rear surface of the main body. When the back side is the front of the main body,
A resin-encapsulated semiconductor device, wherein the main body is provided with a first screw passage portion and a second screw passage portion for attaching the radiating fins to the back surface or the upper surface on different surfaces of the main body. . The resin-encapsulated semiconductor device according to claim 1,
The semiconductor element mounting portion is composed of a plate-shaped die pad for mounting the semiconductor element,
The die pad includes a mounting portion for mounting the semiconductor element, and a bent flat portion formed by bending an end portion on the upper surface side of the mounting portion toward the front side. Resin-sealed semiconductor device. The resin-encapsulated semiconductor device according to claim 2,
The resin-encapsulated semiconductor device is characterized in that a distal end portion of the bent flat portion is formed so as to be located on the front side with respect to an intermediate position between the front surface and the back surface. The resin-encapsulated semiconductor device according to any one of claims 1 to 3,
The resin-encapsulated semiconductor device according to claim 1, wherein the main body is provided with a misalignment prevention engagement portion for preventing misalignment of the attachment position of the radiation fin. The resin-encapsulated semiconductor device according to any one of claims 1 to 4,
By the first screw insertion portions and the second screw insertion portions, the first insertion path and the second interpolation communication path for the passage of a screw is formed, the first insertion path and the second insertion passage so as to intersect A resin-encapsulated semiconductor device, characterized in that it is provided. In the resin-encapsulated semiconductor device according to any one of claims 1 to 5 ,
The first screw thread portion is
A first U-shaped space, and a second U-shaped space sharing a space with the first U-shaped space,
The first U-shaped space has a U-shape having a semicircular curved portion and an opening on the front surface, and the curved portion is formed on the upper surface side edge and the lower surface side of the front surface. The opening is located between the edge and the edge on the lower surface side of the front surface, and the first U-shaped space is formed to a predetermined position toward the back surface,
The second U-shaped space has a U shape having a semicircular curved portion and an opening on the lower surface, and the curved portion is located on the front side edge and the back side of the lower surface. The opening is located between the edge and the front edge of the lower surface, and the second U-shaped space is formed up to a predetermined position toward the upper surface.
The second threading portion is
A third U-shaped space and a fourth U-shaped space sharing a space with the third U-shaped space;
The third U-shaped space has a U-shape having a semicircular curved portion and an opening on the back surface, and the curved portion is formed on the upper surface side edge and the lower surface side of the back surface. The opening is located between the edge and the edge on the upper surface side of the back surface, and the third U-shaped space is formed to a predetermined position toward the front,
The fourth U-shaped space has a U shape having a semicircular curved portion and an opening on the upper surface, and the curved portion is formed on the front side edge and the back side of the upper surface. The opening is located between the edge and the edge on the back side of the upper surface, and the fourth U-shaped space is formed to a predetermined position toward the lower surface,
The first screw passage and the second screw passage share a space,
When the upper surface or the lower surface is viewed, the curved first insertion path is formed by the curved portion of the second U-shaped space and the curved portion of the fourth U-shaped space. Configured,
When the front surface or the back surface is viewed, the second insertion path having a circular shape is formed by the curved portion of the first U-shaped space and the curved portion of the third U-shaped space. A resin-encapsulated semiconductor device characterized by being configured. The resin-encapsulated semiconductor device according to claim 6 ,
When the radiating fin is attached to the back surface, the screw is positioned by the curved portion of the first U-shaped space and the curved portion of the third U-shaped space,
When the radiating fin is attached to the upper surface, the screw is positioned by the curved portion of the second U-shaped space and the curved portion of the fourth U-shaped space. A resin-encapsulated semiconductor device. In the resin-encapsulated semiconductor device according to any one of claims 1 to 5 ,
The first screw threaded portion is formed as a notch groove in which the front surface is notched from the upper surface to the lower surface, and the notch groove has a semicircular curved portion and an opening on the upper surface. The curved portion is located between the front side edge and the back side edge of the top surface, and the opening is located on the front side edge of the top surface, The curved portion and the opening are formed up to the lower surface, and the curved portion is used as the first insertion path,
The second threading portion is formed as a through-hole penetrating from the curved surface to the back surface, and the through-hole is used as the second insertion hole. When the front surface or the back surface is viewed, the second screw-through portion has a circular shape. A resin-encapsulated semiconductor device. A semiconductor element and a semiconductor element mounting portion sealed with a resin; and an outer lead extending in a predetermined direction from the main body toward the outside, the surface on which the outer lead extends The lower surface of the main body, the back surface thereof is the upper surface of the main body, the surface on which the radiation fin can be attached between the lower surface and the upper surface is the back surface of the main body, and the back surface is the front surface of the main body, A main body is provided with a resin-encapsulated semiconductor device in which a first screw passage portion and a second screw passage portion for attaching the radiating fin to the back surface or the upper surface are provided on different surfaces of the main body. A mold for resin sealing,
A first mold corresponding to the front side when the main body is divided into the front side and the back side; and a second mold corresponding to the back side;
The first mold has a first protrusion for forming the first screw threaded portion in a mold housing of the first mold,
The second mold has a second protrusion for forming the second screw threaded portion in a mold housing of the second mold,
The first projecting portion and the second projecting portion are formed in a space formed by abutting the opening surface of the mold housing of the first mold with the opening surface of the mold housing of the second mold. When the main body is molded by injecting a resin, the main body has a shape capable of molding the first screw passage portion and the second screw passage portion. Type. In the mold for resin sealing according to claim 9 ,
Of each of the internal surfaces of the mold housing of the first mold and the mold housing of the second mold, the surface forming the lower surface of the main body is a lower surface molding surface, and the lower surface molding surface is With the first mold and the second mold placed horizontally and facing upward, the opening surface of the mold casing of the first mold and the mold casing of the second mold When viewing the inside of the mold housing of the first mold and the inside of the mold housing of the second mold from the opening surface, the left-right direction is the x-axis, the front-rear direction is the y-axis, and the up-down direction is z As an axis
The first protrusion has a flat surface at the lower end of the first protrusion, and a semicircular first tip curved surface at the tip of the first protrusion. Formed from the lower end to a predetermined position along the z-axis, and a semicircular upper-end curved surface is formed from the base of the first protrusion to the predetermined position along the y-axis at the upper end of the first protrusion. A first inclined surface inclined at a predetermined angle is formed between the first tip curved surface and the upper end curved surface;
The second protrusion has a flat surface at the upper end of the second protrusion, and a second tip curved surface having a semicircular shape at the tip of the second protrusion has an upper end of the second protrusion. A lower end curved surface having a semicircular shape is formed at the lower end of the second projecting portion from the base to the predetermined position along the y axis from the base of the second projecting portion. A resin sealing mold, wherein a second inclined surface having a shape corresponding to the first inclined surface is formed between the second tip curved surface and the lower curved surface. In the mold for resin sealing according to claim 9 ,
Of each of the internal surfaces of the mold housing of the first mold and the mold housing of the second mold, the surface forming the lower surface of the main body is a lower surface molding surface, and the lower surface molding surface is With the first mold and the second mold placed horizontally and facing upward, the opening surface of the mold casing of the first mold and the mold casing of the second mold When viewing the inside of the mold housing of the first mold and the inside of the mold housing of the second mold from the opening surface, the left-right direction is the x-axis, the front-rear direction is the y-axis, and the up-down direction is z As an axis
The first protrusion has a semicircular curved surface formed at the tip of the first protrusion from the upper end to the lower end inside the first mold along the z-axis,
The second sealing portion is formed as a columnar protruding portion that protrudes in a direction along the y-axis and toward a curved surface formed at the tip of the first protruding portion. Mold. The mold for resin sealing according to claim 11 ,
The curved surface formed at the tip of the first protrusion is provided with a protrusion having a tip surface having a shape corresponding to the column tip surface of the columnar protrusion in the direction along the y-axis. Characteristic mold for resin sealing. In the resin sealing mold according to any one of claims 9 to 12 ,
The second mold has an engagement molding portion for molding a misalignment prevention engaging portion for preventing misalignment of the radiating fin when the radiating fin is attached to the main body. Characteristic mold for resin sealing. A method for producing a resin-encapsulated semiconductor device for producing the resin-encapsulated semiconductor device according to claim 1 ,
Second for the first screw insertion portions and the second screw insertion portions, forming the first mold and the second screw insertion portions having a first projecting portion for molding the first screw insertion portions A method for manufacturing a resin-encapsulated semiconductor device , comprising molding with a resin-encapsulating mold comprising a second mold having a protruding portion. A method for producing a resin-encapsulated semiconductor device for producing the resin-encapsulated semiconductor device according to claim 1 ,
At least one of the screw insertion portions, the production method of the resin-sealed semiconductor device characterized by forming the body by the device for drilling of the first screw insertion portions and the second screw insertion portions. A semiconductor element and a semiconductor element mounting portion sealed with a resin; and an outer lead extending in a predetermined direction from the main body toward the outside, the surface on which the outer lead extends The lower surface of the main body, the back surface thereof is the upper surface of the main body, the surface on which the radiation fin can be attached between the lower surface and the upper surface is the back surface of the main body, and the back surface is the front surface of the main body, A main body is provided with a resin-encapsulated semiconductor device in which a first screw passage portion and a second screw passage portion for attaching the radiating fin to the back surface or the upper surface are provided on different surfaces of the main body. A method for manufacturing a resin-encapsulated semiconductor device,
A first mold corresponding to the main body on the front side when the main body is divided into the front side and the back side, and a second mold corresponding to the main body on the back side,
The first mold has a first protrusion for forming the first screw threaded portion in a mold housing of the first mold,
The second mold has a second protrusion for forming the second screw threaded portion in a mold housing of the second mold,
The first protrusion and the second protrusion are formed by abutting the opening surface of the mold housing of the first mold with the opening surface of the mold housing of the second mold. When the main body is molded by injecting resin into the resin, a resin sealing mold is prepared that has a shape that allows the first screw passage and the second screw passage to be formed in the main body. Mold preparation process for resin sealing,
A semiconductor element attaching step of attaching the semiconductor element to the semiconductor element attaching portion;
After covering a predetermined range including the semiconductor element and the semiconductor element mounting portion with the resin sealing mold, a resin is injected into the resin sealing mold, and the semiconductor element and the semiconductor element mounting section are injected. And a resin sealing step of resin sealing a predetermined range including: a method for manufacturing a resin-encapsulated semiconductor device. A semiconductor element and a semiconductor element mounting portion sealed with a resin; and an outer lead extending in a predetermined direction from the main body toward the outside, the surface on which the outer lead extends The lower surface of the main body, the back surface thereof is the upper surface of the main body, the surface on which the radiation fin can be attached between the lower surface and the upper surface is the back surface of the main body, and the back surface is the front surface of the main body, A main body is provided with a resin-encapsulated semiconductor device in which a first screw passage portion and a second screw passage portion for attaching the radiating fin to the back surface or the upper surface are provided on different surfaces of the main body. In the mold for resin sealing, a first mold corresponding to the front side when the main body is divided into the front side and the back side, and a second mold corresponding to the back side, The first gold Has a first protrusion for forming the first screw threaded portion in the mold housing of the first mold, and the second mold is for molding the second screw threaded portion. The second protrusion has a mold housing of the second mold, and the first protrusion and the second protrusion have an opening surface of the mold housing of the first mold and the second mold. When the main body is molded by injecting resin into a space formed by abutting the opening surface of the mold housing of the mold, the first screw passage portion and the second screw passage portion are inserted into the main body. A lead frame for manufacturing a resin-encapsulated semiconductor device using a resin-encapsulating mold having a shape capable of being molded,
A plate-shaped die pad for attaching a semiconductor element, and the outer lead,
The die pad is provided with the first projecting portion provided in the mold casing of the first mold of the resin sealing mold and the mold casing of the second mold. A lead frame, wherein a space for avoiding contact with at least one of the second protrusions is formed.