JP5581158B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

Info

Publication number
JP5581158B2
JP5581158B2 JP2010212328A JP2010212328A JP5581158B2 JP 5581158 B2 JP5581158 B2 JP 5581158B2 JP 2010212328 A JP2010212328 A JP 2010212328A JP 2010212328 A JP2010212328 A JP 2010212328A JP 5581158 B2 JP5581158 B2 JP 5581158B2
Authority
JP
Japan
Prior art keywords
semiconductor device
mold resin
portions
terminal
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010212328A
Other languages
Japanese (ja)
Other versions
JP2012069666A (en
Inventor
雄司 森永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP2010212328A priority Critical patent/JP5581158B2/en
Publication of JP2012069666A publication Critical patent/JP2012069666A/en
Application granted granted Critical
Publication of JP5581158B2 publication Critical patent/JP5581158B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Description

この発明は、半導体装置及びその製造方法に関する。   The present invention relates to a semiconductor device and a manufacturing method thereof.

従来の半導体装置には、例えば図19のように、端子板201,202の長手方向の一端部211,221と半導体チップ203とを電気接続した上で、端子板201,202の一端部211,221及び半導体チップ203をモールド樹脂205により封止し、端子板201,202の他端部212,222をモールド樹脂205から突出させたものがある(特許文献1参照)。また、この半導体装置では、モールド樹脂205の上面205aに形成されたネジ止め部251、及び、端子板201,202の他端部212,222の突出方向先端に形成されてネジを挿通させる挿通孔213,223を利用して、端子板201,202の他端部212,222と外部の電気配線(不図示)とをネジ止めにより接続・固定するように構成されている。
具体的に説明すれば、上記構成の半導体装置では、端子板201,202の他端部212,222がモールド樹脂205の上面205aの周縁から上面205aに沿って外側に突出している。そして、端子板201,202と外部の電気配線とをネジ止めする際には、他端部212,222に形成された挿通孔213,223がモールド樹脂205のネジ止め部251に対向するように、端子板201,202の他端部212,222を一端部211,221に対して折り曲げる加工を施す。
In the conventional semiconductor device, for example, as shown in FIG. 19, one end portions 211 and 221 in the longitudinal direction of the terminal plates 201 and 202 and the semiconductor chip 203 are electrically connected, and then one end portions 211 and 211 of the terminal plates 201 and 202 are connected. 221 and the semiconductor chip 203 are sealed with a mold resin 205, and the other end portions 212 and 222 of the terminal plates 201 and 202 are protruded from the mold resin 205 (see Patent Document 1). Further, in this semiconductor device, an insertion hole that is formed at the front end in the protruding direction of the screw fastening portion 251 formed on the upper surface 205a of the mold resin 205 and the other end portions 212 and 222 of the terminal plates 201 and 202 and allows the screw to pass therethrough. 213 and 223 are used to connect and fix the other end portions 212 and 222 of the terminal plates 201 and 202 and external electrical wiring (not shown) by screwing.
Specifically, in the semiconductor device configured as described above, the other end portions 212 and 222 of the terminal plates 201 and 202 protrude outward along the upper surface 205a from the periphery of the upper surface 205a of the mold resin 205. When the terminal plates 201 and 202 and external electric wiring are screwed, the insertion holes 213 and 223 formed in the other end portions 212 and 222 are opposed to the screwing portion 251 of the mold resin 205. The other end portions 212 and 222 of the terminal plates 201 and 202 are processed to bend the end portions 211 and 221.

特開2009−238804号公報JP 2009-238804 A

しかしながら、上記従来の半導体装置では、上述した折り曲げ加工を施す際に、他端部212,222を大きな角度で折り曲げる(図19においては逆向きに折り曲げている)必要があるため、端子板201,202の他端部212,222とモールド樹脂205との境界部分に大きな応力がかかってしまう。なお、従来では、この応力が少しでも軽減されるように、多数回(例えば4回)に分けて端子板201,202の折り曲げ加工を実施しているが、他端部212,222の折り曲げ箇所がモールド樹脂205との境界部分に集中しているため、応力は十分には軽減されていない。
また、端子板201,202と外部の電気配線とをネジ止めする際には、挿通孔213,223の軸線を中心として端子板201,202の他端部212,222を回転させようとする外力が端子板201,202の他端部212,222にかかるため、この外力に基づいても、端子板201,202の他端部212,222とモールド樹脂205との境界部分に大きな応力が生じてしまう。
However, in the conventional semiconductor device, when the above-described bending process is performed, the other end portions 212 and 222 need to be bent at a large angle (bent in the opposite direction in FIG. 19). A large stress is applied to the boundary portion between the other end portions 212 and 222 of the 202 and the mold resin 205. Conventionally, the terminal plates 201 and 202 are bent many times (for example, four times) so that the stress is reduced as much as possible, but the other end portions 212 and 222 are bent. Is concentrated at the boundary with the mold resin 205, the stress is not sufficiently reduced.
Further, when the terminal plates 201 and 202 are screwed to the external electrical wiring, an external force that tries to rotate the other end portions 212 and 222 of the terminal plates 201 and 202 around the axis of the insertion holes 213 and 223 is used. Is applied to the other end portions 212 and 222 of the terminal plates 201 and 202, so that a large stress is generated at the boundary between the other end portions 212 and 222 of the terminal plates 201 and 202 and the mold resin 205 even based on this external force. End up.

このように、端子板201,202の他端部212,222とモールド樹脂205との境界部分に大きな応力がかかると、この境界部分における端子板201,202とモールド樹脂205との密着性が低下してしまう。その結果として、端子板201,202とモールド樹脂205との間から内部に水分が浸入しやすくなり、半導体装置の電気的な信頼性が低下する、という問題がある。
また、上記従来の半導体装置においては、端子板201,202の他端部212,222を折り曲げる回数が多いことから半導体装置の製造効率が低い、という問題もある。
As described above, when a large stress is applied to the boundary portion between the other end portions 212 and 222 of the terminal plates 201 and 202 and the mold resin 205, the adhesion between the terminal plates 201 and 202 and the mold resin 205 at the boundary portion decreases. Resulting in. As a result, there is a problem that moisture can easily enter from between the terminal plates 201 and 202 and the mold resin 205, and the electrical reliability of the semiconductor device is lowered.
Further, the conventional semiconductor device has a problem that the manufacturing efficiency of the semiconductor device is low because the other end portions 212 and 222 of the terminal plates 201 and 202 are bent many times.

本発明は、上述した事情に鑑みたものであって、モールド樹脂から突出する端子板に対して折り曲げ加工を施しても、端子板とモールド樹脂との密着性低下を抑制でき、かつ、半導体装置の製造効率向上を図ることが可能な半導体装置及びその製造方法を提供することを目的とする。   The present invention has been made in view of the above-described circumstances, and even if the terminal plate protruding from the mold resin is subjected to a bending process, a decrease in adhesion between the terminal plate and the mold resin can be suppressed, and the semiconductor device An object of the present invention is to provide a semiconductor device capable of improving the manufacturing efficiency of the semiconductor device and the manufacturing method thereof.

この課題を解決するために、本発明の半導体装置は、端子板の長手方向の一端部と半導体チップとを電気接続した上で、前記一端部及び前記半導体チップをモールド樹脂により封止し、前記端子板の他端部を前記モールド樹脂の外面から突出させてなる半導体装置であって、前記モールド樹脂の平坦な第一外面には、前記端子板の他端部の突出方向の先端をネジにより固定するためのネジ止め部が形成され、前記端子板の他端部は、前記第一外面に隣り合うと共に当該第一外面と異なる向きに面する前記モールド樹脂の第二外面から略垂直に突出し、前記端子板の他端部は、前記一端部との間の第一折曲線において折り曲げられることで前記第二外面上に配される突出方向の基端板部と、当該基端板部との間の第二折曲線において折り曲げられることで前記ネジ止め部に対向するように前記第一外面上に配される先端板部とを備え、当該先端板部には、その厚さ方向に貫通して前記ネジを挿通させる挿通孔が形成され、前記他端部の突出方向に沿う前記第一折曲線と前記第二折曲線との間隔が、前記端子板の幅方向の一方側から他方側に向かうにしたがって狭くなっていることを特徴とする。 In order to solve this problem, the semiconductor device according to the present invention electrically connects the one end of the terminal plate in the longitudinal direction and the semiconductor chip, and then seals the one end and the semiconductor chip with a mold resin. A semiconductor device in which the other end portion of the terminal plate is protruded from the outer surface of the mold resin, and the tip of the other end portion of the terminal plate in the protruding direction is screwed to the flat first outer surface of the mold resin. A screwing portion for fixing is formed, and the other end of the terminal plate protrudes substantially perpendicularly from the second outer surface of the mold resin that is adjacent to the first outer surface and faces in a direction different from the first outer surface. The other end portion of the terminal plate is bent at a first folding line between the one end portion and the base end plate portion in the protruding direction arranged on the second outer surface, and the base end plate portion, Folded in the second fold curve between A front end plate portion disposed on the first outer surface so as to face the screw fastening portion, and the front end plate portion penetrates in the thickness direction and allows the insertion of the screw. And the distance between the first fold line and the second fold line along the protruding direction of the other end is narrowed from one side to the other side in the width direction of the terminal board. It is characterized by.

また、本発明の半導体装置は、端子板の長手方向の一端部と半導体チップとを電気接続した上で、前記一端部及び前記半導体チップをモールド樹脂により封止し、前記端子板の他端部を前記モールド樹脂の外面から突出させてなる半導体装置であって、前記モールド樹脂の平坦な第一外面には、前記端子板の他端部の突出方向の先端をネジにより固定するためのネジ止め部が形成され、前記端子板の他端部は、前記第一外面に隣り合うと共に当該第一外面と異なる向きに面する前記モールド樹脂の第二外面から略垂直に突出し、前記端子板の他端部は、前記一端部との間の第一折曲線において折り曲げられることで前記第二外面上に配される突出方向の基端板部と、当該基端板部との間の第二折曲線において折り曲げられることで前記ネジ止め部に対向するように前記第一外面上に配される先端板部とを備え、当該先端板部には、その厚さ方向に貫通して前記ネジを挿通させる挿通孔が形成され、前記第二折曲線における前記他端部の幅方向の少なくとも一方の側端部が、前記第一折曲線における前記他端部の幅方向の前記側端部に対して前記幅方向にずれて位置していることを特徴とする。In addition, the semiconductor device of the present invention electrically connects one end of the terminal plate in the longitudinal direction and the semiconductor chip, and then seals the one end and the semiconductor chip with a mold resin, and the other end of the terminal plate Is a semiconductor device that protrudes from the outer surface of the mold resin, and is fixed to the flat first outer surface of the mold resin with a screw for fixing the tip in the protruding direction of the other end of the terminal board with a screw. And the other end of the terminal plate protrudes substantially perpendicularly from the second outer surface of the mold resin that is adjacent to the first outer surface and faces in a direction different from the first outer surface. The end portion is bent at a first folding line between the one end portion and the second end portion between the base end plate portion in the protruding direction arranged on the second outer surface and the base end plate portion. Screwed by being bent along a curve A distal end plate portion disposed on the first outer surface so as to face the first portion, and the distal end plate portion is formed with an insertion hole through which the screw penetrates in the thickness direction. At least one side end portion in the width direction of the other end portion in the second folding curve is positioned so as to be shifted in the width direction with respect to the side end portion in the width direction of the other end portion in the first folding curve. It is characterized by being.

上記構成の半導体装置では、端子板の他端部がモールド樹脂の第二外面から略垂直に突出していることで、従来の場合と比較して、端子板の他端部とモールド樹脂との境界部分における他端部の折曲角度が小さくなる(例えば90度となる)ため、端子板の一端部に対して他端部(基端板部)を折り曲げる際に、端子板の他端部とモールド樹脂との境界部分にかかる応力を低減することができる。
また、端子板の基端板部をモールド樹脂の第二外面上に配するための折曲げ箇所(第一折曲線)と、先端板部をモールド樹脂の第一外面上に配するための折曲げ箇所(第二折曲線)とが互いに離れているため、先端板部を基端板部に対して折り曲げる際に、端子板の他端部とモールド樹脂との境界部分にかかる応力を非常に小さく抑えることができる。
In the semiconductor device having the above configuration, the other end portion of the terminal plate protrudes substantially perpendicularly from the second outer surface of the mold resin, so that the boundary between the other end portion of the terminal plate and the mold resin is compared with the conventional case. Since the bending angle of the other end portion in the portion is small (for example, 90 degrees), when the other end portion (base end plate portion) is bent with respect to one end portion of the terminal plate, The stress applied to the boundary portion with the mold resin can be reduced.
Also, a bent portion (first folding line) for arranging the base end plate portion of the terminal board on the second outer surface of the mold resin, and a fold for arranging the tip plate portion on the first outer surface of the mold resin. Since the bending part (second folding curve) is separated from each other, when the tip plate is bent with respect to the base plate, the stress applied to the boundary between the other end of the terminal plate and the mold resin is very high. It can be kept small.

さらに、先端板部に対して折り曲げられた基端板部がモールド樹脂の第二外面上に配されていることで、ネジにより先端板部をネジ止め部に固定する際に、挿通孔の軸線を中心として端子板の先端板部を回転させようとする外力(回転力)が先端板部にかかっても、基端板部の幅方向の少なくとも一方側がモールド樹脂の第二外面に押し付けられるため、ネジ止めの際に端子板の他端部とモールド樹脂との境界部分にかかる応力を抑制することができる。
また、上記構成の半導体装置では、端子板の折曲げ回数が2回となり、従来と比較してこの折曲げ回数を減らすことができるため、半導体装置の製造効率を向上させることもできる。
Furthermore, the base plate portion bent with respect to the tip plate portion is disposed on the second outer surface of the mold resin, so that when the tip plate portion is fixed to the screw fastening portion with a screw, the axis of the insertion hole Even if an external force (rotational force) that tries to rotate the distal end plate portion of the terminal plate is applied to the distal end plate portion, at least one side in the width direction of the proximal end plate portion is pressed against the second outer surface of the mold resin. The stress applied to the boundary portion between the other end portion of the terminal board and the mold resin at the time of screwing can be suppressed.
Further, in the semiconductor device having the above configuration, the terminal plate is bent twice, and the number of bending can be reduced as compared with the conventional case. Therefore, the manufacturing efficiency of the semiconductor device can be improved.

ネジ止めの際には先端板部に前述した回転力が作用することで、基端板部にはその幅方向の力がかかり、この力によって端子板の他端部とモールド樹脂との境界部分に応力が生じる。
このことに対し、前記他端部の突出方向に沿う前記第一折曲線と前記第二折曲線との間隔が、前記端子板の幅方向の一方側から他方側に向かうにしたがって狭くなっている前記半導体装置では、ネジ止めの際に、基端板部にその幅方向の一方側から他方側に向かう方向に力がかかっても、基端板部の長手方向の寸法が、端子板の幅方向の一方側から他方側に向かうにしたがって狭くなっていることで、この方向の力に対する基端板部の剛性が高められるため、ネジ止め時の回転力に基づいて基端板部の幅方向にかかる力が端子板の他端部とモールド樹脂との境界部分に伝わることを抑えることができる。
したがって、この境界部分にかかる応力をさらに抑制することができる。
When the screw is fastened, the rotational force described above acts on the distal end plate portion, so that a force in the width direction is applied to the proximal end plate portion, and this force causes a boundary portion between the other end portion of the terminal plate and the mold resin. Stress is generated.
On the other hand, the distance between the first fold line and the second fold line along the protruding direction of the other end portion becomes narrower from the one side in the width direction of the terminal board toward the other side. In the semiconductor device , even when a force is applied to the base end plate portion from one side of the width direction to the other side when screwing, the length in the longitudinal direction of the base end plate portion is the width of the terminal plate. Since the rigidity of the base end plate part with respect to the force in this direction is increased by narrowing from one side of the direction to the other side, the width direction of the base end plate part based on the rotational force at the time of screwing Can be prevented from being transmitted to the boundary portion between the other end of the terminal board and the mold resin.
Therefore, the stress applied to the boundary portion can be further suppressed.

そして、前記第二折曲線における前記他端部の幅方向の少なくとも一方の側端部が、前記第一折曲線における前記他端部の幅方向の前記側端部に対して前記幅方向にずれて位置している前記半導体装置においては、前記側端部が前記他端部の突出方向に対して傾斜しているとなおよい。

Then, at least one side end portion in the width direction of the other end portion in the second folding curve is displaced in the width direction with respect to the side end portion in the width direction of the other end portion in the first folding curve. In the semiconductor device, the side end portion is more preferably inclined with respect to the protruding direction of the other end portion.

なお、前記半導体装置においては、前記側端部のうち前記第二折曲線における部分が、他の部分に対して前記端子板の幅方向に突出していてもよいし、他の部分に対して前記端子板の幅方向に窪んでいてもよい。   In the semiconductor device, a portion of the side folding portion in the second folding line may protrude in the width direction of the terminal plate with respect to the other portion, or the portion with respect to the other portion. It may be recessed in the width direction of the terminal board.

これらの構成では、ネジ止めの際に先端板部に作用する回転力に基づいて基端板部にかかる力の方向が、他端部の側端部のうち第二折曲線における部分が第一折曲線における部分に対して端子板の幅方向に沿ってずれる方向と逆向きになっているときに、基端板部の幅方向にかかる力が端子板の長手方向に分散されることになる。特に、他端部の側端部が他端部の突出方向に対して傾斜している場合には、基端板部の幅方向にかかる力を効率よく分散することができる。このため、基端板部の幅方向にかかる力が、端子板の他端部とモールド樹脂との境界部分に作用することを抑えることができる。したがって、端子板の他端部とモールド樹脂との境界部分にかかる応力をさらに抑制することができる。   In these configurations, the direction of the force applied to the proximal end plate portion based on the rotational force acting on the distal end plate portion during screwing is the first folding portion of the side end portion of the other end portion. The force applied in the width direction of the base end plate portion is dispersed in the longitudinal direction of the terminal plate when it is in the direction opposite to the direction shifted along the width direction of the terminal plate with respect to the portion in the folding line. . In particular, when the side end portion of the other end portion is inclined with respect to the protruding direction of the other end portion, the force applied in the width direction of the base end plate portion can be efficiently dispersed. For this reason, it can suppress that the force applied to the width direction of a base end board part acts on the boundary part of the other end part of a terminal board and mold resin. Therefore, the stress applied to the boundary portion between the other end portion of the terminal board and the mold resin can be further suppressed.

さらに、前記半導体装置において、前記モールド樹脂の前記第二外面は、前記基端板部を収容して当該基端板部の側端部を支持する収容凹部を有して形成されているとよい。
この構成では、ネジ止めの際に、基端板部にその幅方向の力がかかっても、基端板部の側端部が収容凹部の内側面に当接するため、端子板の他端部とモールド樹脂との境界部分にかかる応力をさらに緩和することができる。
Furthermore, in the semiconductor device, the second outer surface of the mold resin may be formed to have an accommodation recess that accommodates the base end plate portion and supports a side end portion of the base end plate portion. .
In this configuration, even when a force in the width direction is applied to the base end plate when screwing, the side end of the base end plate abuts against the inner side surface of the receiving recess, so the other end of the terminal plate The stress applied to the boundary portion between the resin and the mold resin can be further relaxed.

また、前記半導体装置においては、前記モールド樹脂の前記第一外面と前記第二外面との角部に、当該角部に配される前記他端部の幅方向の側端部に当接する球状突起が形成されているとよい。
ネジ止めの際には、前述した基端板部の場合と同様に、モールド樹脂の第一外面と第二外面との角部に配される他端部にもその幅方向に力がかかる。これに対し、上記構成では、ネジ止めの際に角部に位置する他端部にその幅方向への力がかかっても、他端部の側端部が球状突起に当接するため、端子板の他端部とモールド樹脂との境界部分にかかる応力をさらに抑制することができる。
また、他端部の側端部が球状突起に当接する際、球状突起にかかる応力が分散されるため、モールド樹脂自体の剛性が低くても端子板の他端部を十分に支持することができる。
Further, in the semiconductor device, a spherical protrusion that contacts a side end portion in the width direction of the other end portion arranged at the corner portion at the corner portion of the first outer surface and the second outer surface of the mold resin. Is good to be formed.
When screwing, as in the case of the base end plate portion described above, a force is also applied in the width direction to the other end portion arranged at the corner portion between the first outer surface and the second outer surface of the mold resin. On the other hand, in the above configuration, even when a force in the width direction is applied to the other end located at the corner when screwing, the side end of the other end abuts against the spherical protrusion, so the terminal plate The stress applied to the boundary portion between the other end of the mold and the mold resin can be further suppressed.
Also, when the side end of the other end abuts against the spherical protrusion, the stress applied to the spherical protrusion is dispersed, so that the other end of the terminal board can be sufficiently supported even if the mold resin itself has low rigidity. it can.

そして、本発明の製造方法は、前記半導体装置を製造する方法であって、前記半導体装置に対し、前記基端板部と前記先端板部とのなす角度が前記第二外面と前記第一外面とのなす角度となるように、前記第二折曲線において前記他端部を折り曲げた後に、前記基端板部が前記第二外面上に配されるように、前記第一折曲線において前記他端部を前記一端部に対して折り曲げることを特徴とする。   The manufacturing method of the present invention is a method for manufacturing the semiconductor device, wherein an angle formed by the base end plate portion and the tip end plate portion with respect to the semiconductor device is the second outer surface and the first outer surface. In the first folding curve, the other end portion is bent on the second outer surface so that the base plate portion is disposed on the second outer surface after the other folding portion is bent in the second folding curve. The end portion is bent with respect to the one end portion.

この製造方法によれば、先に第二折曲線において他端部を折り曲げることで、モールド樹脂の第二外面から離れるように突出する基端板部を容易に支持できるため、この折り曲げの際に、端子板の基端板部とモールド樹脂との境界部分にかかる応力を非常に小さく抑えることができる。   According to this manufacturing method, by bending the other end portion first in the second folding curve, the base end plate portion protruding away from the second outer surface of the mold resin can be easily supported. The stress applied to the boundary portion between the base end plate portion of the terminal plate and the mold resin can be kept very small.

本発明によれば、端子板の他端部を折り曲げる際、あるいは、ネジにより端子板の他端部をモールド樹脂のネジ止め部に固定する際に、端子板の他端部とモールド樹脂との境界部分にかかる応力を抑制することができるため、境界部分における端子板とモールド樹脂との密着性低下を抑制できる。その結果として、モールド樹脂内部への水分浸入を抑えて、半導体装置の電気的な信頼性を向上させることができる。
また、従来と比較して、端子板の折曲げ回数を減らすことができるため、半導体装置の製造効率を向上させることもできる。
According to the present invention, when the other end portion of the terminal plate is bent, or when the other end portion of the terminal plate is fixed to the screw fastening portion of the mold resin with a screw, the other end portion of the terminal plate and the mold resin Since the stress applied to the boundary portion can be suppressed, it is possible to suppress a decrease in adhesion between the terminal board and the mold resin at the boundary portion. As a result, moisture permeation into the mold resin can be suppressed and the electrical reliability of the semiconductor device can be improved.
In addition, since the number of times of bending the terminal plate can be reduced as compared with the conventional case, the manufacturing efficiency of the semiconductor device can be improved.

本発明の第一実施形態に係る半導体装置であって端子板に折曲加工を施す前の状態を示す斜視図である。It is a semiconductor device concerning a first embodiment of the present invention, and is a perspective view showing a state before bending a terminal board. 図1の半導体装置を示す概略上面図である。FIG. 2 is a schematic top view showing the semiconductor device of FIG. 1. 図1,2の半導体装置を示す概略側断面図である。It is a schematic sectional side view which shows the semiconductor device of FIG. 図1の半導体装置において、端子板をモールド樹脂の上面側から見た状態を示す要部拡大図である。In the semiconductor device of FIG. 1, it is a principal part enlarged view which shows the state which looked at the terminal board from the upper surface side of mold resin. 図1の半導体装置において端子板に折曲加工を施す半導体装置の製造方法を示す断面図である。FIG. 2 is a cross-sectional view illustrating a method for manufacturing a semiconductor device in which a terminal plate is bent in the semiconductor device of FIG. 1. 図5の製造方法を経た半導体装置をなす折曲加工後の端子板を示しており、(a)は拡大上面図、(b)は拡大側面図である。FIGS. 6A and 6B show a bent terminal board forming a semiconductor device that has undergone the manufacturing method of FIGS. 5A and 5B, wherein FIG. 本発明の第二実施形態に係る半導体装置をなす折曲加工前の端子板を、モールド樹脂の上面側から見た状態を示す要部拡大図である。It is a principal part enlarged view which shows the state which looked at the terminal board before the bending process which makes the semiconductor device which concerns on 2nd embodiment of this invention from the upper surface side of mold resin. 図7の端子板に折曲加工を施した後の状態を示しており、(a)は拡大上面図、(b)は拡大側面図である。The state after performing the bending process to the terminal board of FIG. 7 is shown, (a) is an enlarged top view, (b) is an enlarged side view. 本発明の第三実施形態に係る半導体装置をなす折曲加工前の端子板を、モールド樹脂の上面側から見た状態を示す要部拡大図である。It is a principal part enlarged view which shows the state which looked at the terminal board before the bending process which makes the semiconductor device which concerns on 3rd embodiment of this invention from the upper surface side of mold resin. 図9の端子板に折曲加工を施した後の状態を示しており、(a)は拡大上面図、(b)は拡大側面図である。The state after performing the bending process to the terminal board of FIG. 9 is shown, (a) is an enlarged top view, (b) is an enlarged side view. 本発明の第四実施形態に係る半導体装置をなす折曲加工前の端子板を、モールド樹脂の上面側から見た状態を示す要部拡大図である。It is a principal part enlarged view which shows the state which looked at the terminal board before the bending process which makes the semiconductor device which concerns on 4th embodiment of this invention from the upper surface side of mold resin. 図11の端子板に折曲加工を施した後の状態を示しており、(a)は拡大上面図、(b)は拡大側面図である。The state after performing the bending process to the terminal board of FIG. 11 is shown, (a) is an enlarged top view, (b) is an enlarged side view. 本発明の第五実施形態に係る半導体装置をなす折曲加工前の端子板を、モールド樹脂の上面側から見た状態を示す要部拡大図である。It is a principal part enlarged view which shows the state which looked at the terminal board before the bending process which makes the semiconductor device which concerns on 5th embodiment of this invention from the upper surface side of mold resin. 図13の端子板に折曲加工を施した後の状態を示しており、(a)は拡大上面図、(b)は拡大側面図である。The state after performing the bending process to the terminal board of FIG. 13 is shown, (a) is an enlarged top view, (b) is an enlarged side view. 本発明の第六実施形態に係る半導体装置をなす折曲加工前の端子板を、モールド樹脂の上面側から見た状態を示す要部拡大図である。It is a principal part enlarged view which shows the state which looked at the terminal board before the bending process which comprises the semiconductor device which concerns on 6th embodiment of this invention from the upper surface side of mold resin. 図15の端子板に折曲加工を施した後の状態を示しており、(a)は拡大上面図、(b)は拡大側面図である。The state after performing the bending process to the terminal board of FIG. 15 is shown, (a) is an enlarged top view, (b) is an enlarged side view. 本発明の第七実施形態に係る半導体装置のうち、モールド樹脂から突出する端子板に折曲加工を施した後の状態を示しており、(a)は拡大上面図、(b)は拡大側面図である。The semiconductor device which concerns on 7th embodiment of this invention has shown the state after giving the bending process to the terminal board which protrudes from mold resin, (a) is an enlarged top view, (b) is an enlarged side view FIG. 本発明の他の実施形態に係る半導体装置の製造方法を説明する概略上面図である。It is a schematic top view explaining the manufacturing method of the semiconductor device which concerns on other embodiment of this invention. 従来の半導体装置の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the conventional semiconductor device.

〔第一実施形態〕
以下、図1〜6を参照して本発明の第一実施形態について説明する。
図1〜3に示すように、この実施形態に係る半導体装置1は、ヒートシンク2と、ヒートシンク2の上面2a上に間隔をあけて配されるダイパッド3及び複数の端子板4,5と、ダイパッド3の上面3aに搭載される半導体チップ6と、端子板4,5と半導体チップ6とを電気接続する接続子7とを、モールド樹脂8により封止して大略構成されている。
ヒートシンク2は、半導体チップ6において生じた熱を効率よく放熱するものであり、厚板状に形成されている。このヒートシンク2は、少なくとも銅(Cu)、タングステン、モリブデン等の放熱性の高い材料によって形成されていればよいが、例えばこれに加えてNiメッキを施したものでもよい。
[First embodiment]
The first embodiment of the present invention will be described below with reference to FIGS.
As shown in FIGS. 1 to 3, the semiconductor device 1 according to this embodiment includes a heat sink 2, a die pad 3 and a plurality of terminal plates 4, 5 arranged on the upper surface 2 a of the heat sink 2 at intervals, and a die pad. The semiconductor chip 6 mounted on the upper surface 3a of the board 3 and the connector 7 that electrically connects the terminal plates 4 and 5 and the semiconductor chip 6 are sealed with a molding resin 8 to be generally configured.
The heat sink 2 efficiently dissipates heat generated in the semiconductor chip 6 and is formed in a thick plate shape. The heat sink 2 may be formed of at least a material having high heat dissipation such as copper (Cu), tungsten, molybdenum, etc., but may be Ni plated in addition to this, for example.

ダイパッド3及び複数の端子板4,5は、それぞれ銅材等の導電性を有する材料を平板状に形成して構成されており、これらの間で電気的な短絡が生じないように、その面方向に互いに間隔をあけて配されている。
そして、ダイパッド3に搭載される半導体チップ6は、板状に形成され、その上面6a及び下面6bに電極を有して構成されている。この半導体チップ6は、ダイオード等のように通電により発熱するものであり、半田等のように導電性を有する導電性接合剤を介してダイパッド3の上面3aに固定されている。これにより、半導体チップ6がダイパッド3に電気接続されている。
The die pad 3 and the plurality of terminal plates 4 and 5 are each formed by forming a conductive material such as a copper material into a flat plate shape, and the surfaces thereof are formed so as not to cause an electrical short circuit therebetween. They are spaced apart from each other in the direction.
The semiconductor chip 6 mounted on the die pad 3 is formed in a plate shape, and has an upper surface 6a and a lower surface 6b having electrodes. The semiconductor chip 6 generates heat when energized like a diode or the like, and is fixed to the upper surface 3a of the die pad 3 via a conductive bonding agent having conductivity such as solder. Thereby, the semiconductor chip 6 is electrically connected to the die pad 3.

各端子板4,5は、平面視矩形の帯板状に形成されており、その長手方向の一端部をなす内部接続部41,51と、長手方向の他端部をなす外部接続部42,52とを有している。
内部接続部41,51は、接続子7の一端を接合して半導体チップ6に電気接続される部分である。この内部接続部41,51は、ヒートシンク2の上面2a上においてダイパッド3に隣り合う位置に配され、モールド樹脂8内に埋設されている。
一方、外部接続部42,52は、半導体チップ6を外部に電気接続するための部分である。この外部接続部42,52は、内部接続部41,51よりもダイパッド3から離れるように、また、ヒートシンク2の上面2aの周縁から突出するように位置している。
Each terminal plate 4, 5 is formed in a rectangular strip shape in plan view, and has internal connection portions 41, 51 forming one end in the longitudinal direction and external connection portions 42, forming the other end in the longitudinal direction. 52.
The internal connection portions 41 and 51 are portions that are electrically connected to the semiconductor chip 6 by joining one end of the connector 7. The internal connection portions 41 and 51 are arranged at positions adjacent to the die pad 3 on the upper surface 2 a of the heat sink 2 and are embedded in the mold resin 8.
On the other hand, the external connection portions 42 and 52 are portions for electrically connecting the semiconductor chip 6 to the outside. The external connection portions 42 and 52 are positioned so as to be farther from the die pad 3 than the internal connection portions 41 and 51 and project from the periphery of the upper surface 2 a of the heat sink 2.

複数の端子板4,5は、一対の端子板4,5がダイパッド3側から互いに離れる方向に延びるように配されている。
そして、ダイパッド3と、一対の端子板4,5の一方(第一端子板4)をなす内部接続部41との間に、導電性を有するボンディングワイヤや接続板等の接続子7を配することで、第一端子板4と半導体チップ6とが電気接続されている。また、他方の端子板(第二端子板5)の内部接続部51と半導体チップ6の上面6aとの間に接続子7を配することで、第二端子板5と半導体チップ6とが電気接続されている。
The plurality of terminal boards 4 and 5 are arranged so that the pair of terminal boards 4 and 5 extend in a direction away from the die pad 3 side.
And between the die pad 3 and the internal connection part 41 which makes one of the pair of terminal plates 4 and 5 (first terminal plate 4), a connector 7 such as a bonding wire or a connection plate having conductivity is arranged. Thus, the first terminal plate 4 and the semiconductor chip 6 are electrically connected. Further, by arranging the connector 7 between the internal connection portion 51 of the other terminal plate (second terminal plate 5) and the upper surface 6a of the semiconductor chip 6, the second terminal plate 5 and the semiconductor chip 6 are electrically connected. It is connected.

なお、本実施形態では、一つのダイパッド3、一つの半導体チップ6、一対の端子板4,5からなるユニットが二組形成され、これら二組のユニットによって一つの半導体装置1が構成されている。これら二組のユニットは、二つの第一端子板4がその幅方向に間隔をあけて隣り合うように配列されている。   In this embodiment, two sets of units each including one die pad 3, one semiconductor chip 6, and a pair of terminal plates 4 and 5 are formed, and one semiconductor device 1 is configured by these two sets. . These two sets of units are arranged so that the two first terminal boards 4 are adjacent to each other at an interval in the width direction.

モールド樹脂8は、ヒートシンク2の下面2bが露出するように、また、各端子板4,5の外部接続部42,52が外方に突出するように、ヒートシンク2の上面2a、ダイパッド3、各端子板4,5の内部接続部41,51、半導体チップ6及び接続子7を封止している。すなわち、ダイパッド3、各端子板4,5の内部接続部41,51、半導体チップ6及び接続子7は、モールド樹脂8の内部に埋設されている。
より詳細に説明すれば、モールド樹脂8は、ヒートシンク2の上面2aのうち端子板4,5の幅方向に沿うヒートシンク2の長手方向の両端が露出するように形成されている。また、モールド樹脂8は、端子板4,5の外部接続部42,52がモールド樹脂8の側面(第二外面)8cから略垂直に突出するように形成されている。
The mold resin 8 is formed so that the lower surface 2b of the heat sink 2 is exposed and the external connection portions 42 and 52 of the terminal plates 4 and 5 protrude outward. The internal connection portions 41 and 51 of the terminal plates 4 and 5, the semiconductor chip 6 and the connector 7 are sealed. That is, the die pad 3, the internal connection portions 41 and 51 of the terminal plates 4 and 5, the semiconductor chip 6 and the connector 7 are embedded in the mold resin 8.
If it demonstrates in detail, the mold resin 8 is formed so that the both ends of the longitudinal direction of the heat sink 2 along the width direction of the terminal boards 4 and 5 among the upper surfaces 2a of the heat sink 2 may be exposed. The mold resin 8 is formed such that the external connection portions 42 and 52 of the terminal plates 4 and 5 protrude substantially perpendicularly from the side surface (second outer surface) 8 c of the mold resin 8.

そして、本実施形態の半導体装置1は、図5(c)に示すように、端子板4,5の外部接続部42,52が、内部接続部41,51に対して折り曲げ加工されることで、モールド樹脂8の側面8c及び上面(第一外面)8aに配されるように構成されている。なお、モールド樹脂8の側面8cは、図1,3,4に示すように、外部接続部42,52を収容してその幅方向の側端部42a,42b,52a,52bを支持する収容凹部82を有して形成されている。収容凹部82は、モールド樹脂8の上面8a側に開口するように形成されている。また、端子板4,5の幅方向に沿う収容凹部82の幅寸法は、端子板4,5の幅寸法に対して同等あるいは微小に大きく設定されている。
さらに、モールド樹脂8の上面8aには、端子板4,5の外部接続部42,52の突出方向の先端をネジにより固定するためのネジ止め部81が形成されている。なお、本実施形態におけるネジ止め部81は、ナットを挿入する孔であるが、例えばモールド樹脂8自体に直接形成されて、端子板4,5固定用のネジを螺合するための雌ネジであってもよい。
In the semiconductor device 1 of the present embodiment, the external connection portions 42 and 52 of the terminal plates 4 and 5 are bent with respect to the internal connection portions 41 and 51 as shown in FIG. The mold resin 8 is arranged on the side surface 8c and the upper surface (first outer surface) 8a. As shown in FIGS. 1, 3, and 4, the side surface 8 c of the mold resin 8 accommodates the external connection portions 42 and 52 and supports the side end portions 42 a, 42 b, 52 a, and 52 b in the width direction. 82 is formed. The housing recess 82 is formed so as to open to the upper surface 8 a side of the mold resin 8. The width dimension of the accommodating recess 82 along the width direction of the terminal plates 4 and 5 is set to be equal to or slightly larger than the width dimension of the terminal plates 4 and 5.
Further, on the upper surface 8a of the mold resin 8, a screwing portion 81 for fixing the distal ends of the external connection portions 42 and 52 of the terminal plates 4 and 5 in the protruding direction with screws is formed. In addition, although the screwing part 81 in this embodiment is a hole which inserts a nut, it is a female screw for screwing together the screw for fixing the terminal boards 4 and 5 directly formed in the mold resin 8 itself, for example. There may be.

このように構成されるモールド樹脂8に対し、各端子板4,5の外部接続部42,52は、図4,5に示すように、内部接続部41,51との間の第一折曲線L1において折り曲げられることでモールド樹脂8の側面8c上に配される突出方向の基端板部43,53と、基端板部43,53との間の第二折曲線L2において折り曲げられることでモールド樹脂8のネジ止め部81に対向するようにモールド樹脂8の上面8a上に配される先端板部44,54とを備えている。なお、本実施形態においては、二つの折曲線L1,L2が、共に端子板4,5の外部接続部42,52の突出方向に直交し、互いに平行している。
そして、先端板部44,54には、その厚さ方向に貫通して端子板4,5固定用のネジを挿通させるための挿通孔45,55が形成されている。
As shown in FIGS. 4 and 5, the first folding line between the external connection portions 42 and 52 of the terminal plates 4 and 5 and the internal connection portions 41 and 51 with respect to the mold resin 8 configured as described above. By being bent at L1, it is bent at the second folding line L2 between the base end plate portions 43 and 53 in the protruding direction and the base end plate portions 43 and 53 arranged on the side surface 8c of the mold resin 8. End plate portions 44 and 54 are provided on the upper surface 8a of the mold resin 8 so as to face the screwing portions 81 of the mold resin 8. In the present embodiment, the two folding lines L1 and L2 are both orthogonal to the protruding direction of the external connection portions 42 and 52 of the terminal plates 4 and 5, and are parallel to each other.
The front end plate portions 44 and 54 are formed with insertion holes 45 and 55 through which the screws for fixing the terminal plates 4 and 5 are inserted in the thickness direction.

以上のように構成される半導体装置1を製造する場合には、例えば、ダイパッド3及び端子板4,5の相対的な位置決めを治具等により行い、また、半導体チップ6をダイパッド3に搭載した上で、接続子7により端子板4,5と半導体チップ6とを電気接続すればよい(接続工程)。
その後、モールド樹脂8を形成する樹脂封止工程においては、例えばヒートシンク2の上面2a上にダイパッド3及び端子板4,5が間隔をあけて位置するように、モールド成形用の金型等により、ヒートシンク2、ダイパッド3及び端子板4,5の相対的な位置決めを実施すればよい。
When manufacturing the semiconductor device 1 configured as described above, for example, the relative positioning of the die pad 3 and the terminal plates 4 and 5 is performed with a jig or the like, and the semiconductor chip 6 is mounted on the die pad 3. Above, the terminal plates 4 and 5 and the semiconductor chip 6 may be electrically connected by the connector 7 (connection process).
Thereafter, in the resin sealing step for forming the mold resin 8, for example, by using a mold for molding so that the die pad 3 and the terminal plates 4, 5 are positioned at an interval on the upper surface 2 a of the heat sink 2, The relative positioning of the heat sink 2, the die pad 3, and the terminal boards 4 and 5 may be performed.

そして、半導体装置1の製造をさらに進める際には、はじめに図5(a)、(b)に示すように、各端子板4,5のうち基端板部43,53と先端板部44,54とのなす角度がモールド樹脂8の側面8cと上面8aとのなす角度(図示例では90度)となるように、第二折曲線L2において先端板部44,54を基端板部43,53に対して折り曲げる(第一折曲工程)。この工程においては、モールド樹脂8の側面8cから離れるように突出する基端板部43,53を容易に支持することができるため、先端板部44,54を折り曲げる際に、端子板4,5の基端板部43,53とモールド樹脂8との境界部分にかかる応力を非常に小さく抑えることができる。   When the manufacturing of the semiconductor device 1 is further advanced, first, as shown in FIGS. 5A and 5B, the base end plate portions 43 and 53 and the front end plate portion 44 of the terminal plates 4 and 5 are provided. 54, the distal end plate portions 44, 54 are connected to the proximal end plate portion 43, at the second folding line L2, so that the angle formed by the side surface 8c of the mold resin 8 and the upper surface 8a (90 degrees in the illustrated example) is formed. 53 is bent (first bending step). In this process, since the base end plate portions 43 and 53 protruding away from the side surface 8c of the mold resin 8 can be easily supported, the terminal plates 4 and 5 are bent when the front end plate portions 44 and 54 are bent. The stress applied to the boundary portion between the base end plate portions 43 and 53 and the mold resin 8 can be kept very small.

最後に、図5(b),(c)に示すように、示すように、基端板部43,53がモールド樹脂8の側面8c上に配されるように、第一折曲線L1において基端板部43,53を内部接続部41,51に対して折り曲げる(第二折曲工程)ことで、半導体装置1の製造が完了する。
そして、第二折曲工程を経た半導体装置1では、図5(c),6に示すように、端子板4,5の基端板部43,53が、モールド樹脂8に形成された収容凹部82内に配されている。なお、図示例では、各端子板4,5の内部接続部41,51と基端板部43,53とのなす角度が90度となっている。また、端子板4,5の先端板部44,54は、その挿通孔45がネジ止め部81に対向するようにモールド樹脂8の上面8a上に配されている。
Finally, as shown in FIGS. 5B and 5C, the base end plate portions 43 and 53 are arranged on the side surface 8 c of the mold resin 8 as shown in FIG. By bending the end plate portions 43 and 53 with respect to the internal connection portions 41 and 51 (second bending step), the manufacture of the semiconductor device 1 is completed.
In the semiconductor device 1 that has undergone the second bending step, the base end plate portions 43 and 53 of the terminal plates 4 and 5 are formed in the molding recess 8 as shown in FIGS. 82. In the illustrated example, the angle formed between the internal connection portions 41 and 51 of the terminal plates 4 and 5 and the base end plate portions 43 and 53 is 90 degrees. Further, the end plate portions 44 and 54 of the terminal plates 4 and 5 are arranged on the upper surface 8 a of the mold resin 8 so that the insertion holes 45 face the screwing portions 81.

以上説明したように第一実施形態の半導体装置1及びその製造方法によれば、端子板4,5の外部接続部42,52がモールド樹脂8の側面8cから略垂直に突出していることで、従来の場合と比較して、外部接続部42,52とモールド樹脂8との境界部分における外部接続部42,52の折曲角度が小さくなるため、内部接続部41,51に対して外部接続部42,52の基端板部43,53を折り曲げる際に、外部接続部42,52とモールド樹脂8との境界部分にかかる応力を低減することができる。
特に、端子板4,5の外部接続部42,52を折り曲げる二つの第一折曲線L1と第二折曲線L2が互いに離れているため、先端板部を基端板部に対して折り曲げる際に、外部接続部42,52とモールド樹脂8との境界部分にかかる応力を非常に小さく抑えることができる。
As described above, according to the semiconductor device 1 and the manufacturing method thereof according to the first embodiment, the external connection portions 42 and 52 of the terminal plates 4 and 5 protrude substantially vertically from the side surface 8c of the mold resin 8, Compared to the conventional case, the bending angle of the external connection portions 42 and 52 at the boundary portion between the external connection portions 42 and 52 and the mold resin 8 is reduced, so that the external connection portion is compared with the internal connection portions 41 and 51. When the base end plate portions 43 and 53 of 42 and 52 are bent, the stress applied to the boundary portion between the external connection portions 42 and 52 and the mold resin 8 can be reduced.
In particular, when the first and second folding lines L1 and L2 that bend the external connection portions 42 and 52 of the terminal plates 4 and 5 are separated from each other, when the distal end plate portion is bent with respect to the proximal end plate portion. The stress applied to the boundary portion between the external connection portions 42 and 52 and the mold resin 8 can be kept very small.

また、ネジにより先端板部44,54をネジ止め部81に固定する際には、図6に示すように、挿通孔45,55の軸線を中心として先端板部44,54を回転させようとする外力(回転力;図6(a)における矢印r方向の力)が先端板部44,54にかかる。これに対し、本実施形態では、端子板4,5の先端板部44,54に対して折り曲げられた基端板部43,53が、モールド樹脂8の側面8c上に配されているため、r方向の回転力が先端板部44,54にかかっても、基端板部43,53の幅方向の一方側がモールド樹脂8の側面8c(図示例では収容凹部82の底面)に押し付けられることになる。   Further, when the front end plate portions 44 and 54 are fixed to the screw fixing portion 81 with screws, the front end plate portions 44 and 54 are rotated about the axes of the insertion holes 45 and 55 as shown in FIG. External force (rotational force; force in the direction of arrow r in FIG. 6A) is applied to the tip plate portions 44 and 54. On the other hand, in this embodiment, since the base end plate parts 43 and 53 bent with respect to the front end plate parts 44 and 54 of the terminal plates 4 and 5 are arranged on the side surface 8c of the mold resin 8, Even if the rotational force in the r direction is applied to the distal end plate portions 44 and 54, one side in the width direction of the proximal end plate portions 43 and 53 is pressed against the side surface 8c of the mold resin 8 (the bottom surface of the housing recess 82 in the illustrated example). become.

さらに、先端板部にr方向の回転力が先端板部44,54が作用すると、基端板部43,53にはその幅方向の一方側(一方の側端部42a,52a側)から他方側(他方の側端部42b,52b側)に向かう力(図6における矢印w方向の力)がかかる。これに対し、本実施形態では、収容凹部82が形成されていることで、基端板部43,53の他方の側端部42b,52が収容凹部82の内側面に当接することになる。
したがって、ネジ止めの際に端子板4,5の外部接続部42,52とモールド樹脂8との境界部分にかかる応力を抑制・緩和することができる。
Further, when the distal end plate portions 44 and 54 act on the distal end plate portion in the r direction, the proximal end plate portions 43 and 53 are moved from one side in the width direction (one side end portion 42a, 52a side) to the other. A force (force in the direction of arrow w in FIG. 6) is applied toward the side (the other side end portion 42b, 52b side). On the other hand, in this embodiment, since the accommodation recessed part 82 is formed, the other side edge part 42b, 52 of the base end plate parts 43 and 53 will contact | abut to the inner surface of the accommodation recessed part 82. FIG.
Therefore, the stress applied to the boundary portion between the external connection portions 42 and 52 of the terminal plates 4 and 5 and the mold resin 8 at the time of screwing can be suppressed / relieved.

以上のように、本実施形態の半導体装置1では、端子板4,5の外部接続部42,52とモールド樹脂8との境界部分にかかる応力を抑制することができるため、この境界部分における端子板4,5とモールド樹脂8との密着性低下を抑制できる。その結果として、モールド樹脂8内部への水分浸入を抑えて、半導体装置1の電気的な信頼性を向上させることができる。
また、本実施形態の半導体装置1では、端子板4,5の折曲げ回数が2回となり、従来と比較してこの折曲げ回数を減らすことができるため、半導体装置1の製造効率を向上させることもできる。
As described above, in the semiconductor device 1 according to the present embodiment, the stress applied to the boundary portion between the external connection portions 42 and 52 of the terminal plates 4 and 5 and the mold resin 8 can be suppressed. A decrease in adhesion between the plates 4 and 5 and the mold resin 8 can be suppressed. As a result, moisture permeation into the mold resin 8 can be suppressed and the electrical reliability of the semiconductor device 1 can be improved.
Further, in the semiconductor device 1 of the present embodiment, the number of times the terminal plates 4 and 5 are bent is two times, and the number of times of bending can be reduced as compared with the conventional case, so that the manufacturing efficiency of the semiconductor device 1 is improved. You can also.

〔第二実施形態〕
次に、図7,8を参照して本発明の第二実施形態について説明する。
この実施形態に係る半導体装置は、図7,8に示すように、第一実施形態の半導体装置1と比較して、端子板4,5を折り曲げる方法のみが異なっている。
図7に示すように、この実施形態の半導体装置では、第一実施形態と同様に、端子板4,5が平面視矩形の帯状に形成され、その外部接続部42,52がモールド樹脂8の側面8cから突出している。ただし、外部接続部42,52の突出方向に沿う第一折曲線L1と第二折曲線L2との間隔が、端子板4,5の一方の側端部42a,52a側から他方の側端部42b,52b側に向かうにしたがって狭くなっている。言い換えれば、基端板部43,53の長手方向の寸法が、端子板4,5の幅方向の一方側から他方側に向かうにしたがって狭くなっている。そして、本実施形態において、第一折曲線L1及び第二折曲線L2は、外部接続部42,52の突出方向に対して互いに異なる方向に傾斜している。
[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 7 and 8, the semiconductor device according to this embodiment is different from the semiconductor device 1 according to the first embodiment only in the method of bending the terminal plates 4 and 5.
As shown in FIG. 7, in the semiconductor device of this embodiment, the terminal plates 4 and 5 are formed in a rectangular band shape in plan view, and the external connection portions 42 and 52 are formed of the mold resin 8 as in the first embodiment. It protrudes from the side surface 8c. However, the distance between the first fold line L1 and the second fold line L2 along the protruding direction of the external connection parts 42, 52 is such that the one side end 42a, 52a side of the terminal plate 4, 5 is the other side end. It becomes narrower toward 42b and 52b side. In other words, the longitudinal dimension of the base end plate portions 43 and 53 becomes narrower from the one side in the width direction of the terminal plates 4 and 5 toward the other side. In the present embodiment, the first fold line L1 and the second fold line L2 are inclined in different directions with respect to the protruding direction of the external connection portions 42 and 52.

このように設定された二つの折曲線L1,L2において外部接続部42,52を折り曲げた状態においては、図8に示すように、外部接続部42,52をなす基端板部43,53のうち先端板部44,54側の端部が、内部接続部41,51側の端部よりもネジ止め時に基端板部43,53にかかる力の方向(矢印w方向)にずれて位置するように、基端板部43,53がモールド樹脂8の厚さ方向に対して傾斜している。また、基端板部43,53は、その一方の側端部42a,52a側から他方の側端部42b,52b側に向かうにしたがってモールド樹脂8の側面8cから離れるように、モールド樹脂8の側面8cに対して傾斜して配されている。   In a state where the external connection portions 42 and 52 are bent at the two folding lines L1 and L2 set as described above, the base end plate portions 43 and 53 forming the external connection portions 42 and 52 are formed as shown in FIG. Of these, the end portions on the distal end plate portions 44 and 54 side are positioned more shifted than the end portions on the internal connection portions 41 and 51 side in the direction of the force applied to the proximal end plate portions 43 and 53 (arrow w direction) when screwed. Thus, the base end plate portions 43 and 53 are inclined with respect to the thickness direction of the mold resin 8. In addition, the base end plate portions 43 and 53 are separated from the side surface 8c of the mold resin 8 from the one side end portion 42a and 52a side toward the other side end portion 42b and 52b side. Inclined with respect to the side surface 8c.

一方、先端板部44,54は、その一方の側端部42a,52a側から他方の側端部42b,52b側に向かうにしたがって、モールド樹脂8の上面8aに近づくように、モールド樹脂8の上面8aに対して傾斜して配されている。
そして、本実施形態では、外部接続部42,52の突出方向に対する二つの折曲線L1,L2の傾斜角度の大きさが同等であるため、モールド樹脂8の上面側から見て、端子板4,5の基端板部43,53に対する内部接続部41,51及び先端板部44,54の延出方向が互いに平行している。
On the other hand, the tip plate portions 44 and 54 are made of the mold resin 8 so as to approach the upper surface 8a of the mold resin 8 from the one side end portion 42a and 52a side toward the other side end portion 42b and 52b side. Inclined with respect to the upper surface 8a.
And in this embodiment, since the magnitude | size of the inclination angle of the two folding lines L1 and L2 with respect to the protrusion direction of the external connection parts 42 and 52 is equivalent, seeing from the upper surface side of the mold resin 8, terminal board 4, The extending directions of the internal connection portions 41 and 51 and the distal end plate portions 44 and 54 with respect to the base end plate portions 43 and 53 of the fifth plate are parallel to each other.

なお、本実施形態の図示例には記載されていないが、例えば第一実施形態と同様に、モールド樹脂8の側面8cには、端子板4,5の基端板部43,53を収容する収容凹部82が形成されていてもよい。なお、本実施形態において収容凹部82を形成する場合には、本実施形態の基端板部43,53の配置に対応するように、モールド樹脂8の厚さ方向に対して傾斜するように形成されていることが好ましい。   Although not described in the illustrated example of the present embodiment, for example, as in the first embodiment, the base plate portions 43 and 53 of the terminal plates 4 and 5 are accommodated on the side surface 8c of the mold resin 8. An accommodation recess 82 may be formed. In addition, when forming the accommodation recessed part 82 in this embodiment, it forms so that it may incline with respect to the thickness direction of the mold resin 8 so as to correspond to arrangement | positioning of the base end board parts 43 and 53 of this embodiment. It is preferable that

本実施形態の半導体装置によれば、第一実施形態の場合と同様の効果を奏する。
さらに、本実施形態では、基端板部43,53の長手方向の寸法が、端子板4,5の幅方向の一方側から他方側に向かうにしたがって狭くなっていることで、ネジ止めの際に基端板部43,53に作用するw方向の力に対する基端板部43,53の剛性が高められている。このため、基端板部43,53に作用するw方向の力が端子板4,3の外部接続部42,52とモールド樹脂8との境界部分に伝わることを抑えることができる。したがって、第一実施形態の場合と比較して、この境界部分にかかる応力をさらに抑制することができる。
また、この構成では、先端板部44,54がモールド樹脂8の上面8aに対して傾斜した状態で配されるため、ネジ止めの際にはこの先端板部44,54がバネワッシャの役割を果たし、ネジによる締結力を向上させることもできる。
According to the semiconductor device of the present embodiment, the same effects as in the case of the first embodiment can be obtained.
Furthermore, in this embodiment, the longitudinal dimension of the base end plate portions 43 and 53 is narrowed from one side to the other side in the width direction of the terminal plates 4 and 5, so that when screwing Further, the rigidity of the base end plate portions 43 and 53 against the force in the w direction acting on the base end plate portions 43 and 53 is enhanced. For this reason, it can suppress that the force of the w direction which acts on the base end board parts 43 and 53 is transmitted to the boundary part of the external connection parts 42 and 52 of the terminal boards 4 and 3 and the mold resin 8. FIG. Therefore, compared with the case of 1st embodiment, the stress concerning this boundary part can further be suppressed.
Further, in this configuration, since the front end plate portions 44 and 54 are arranged in an inclined state with respect to the upper surface 8a of the mold resin 8, the front end plate portions 44 and 54 serve as spring washers when screwed. Moreover, the fastening force by a screw can also be improved.

〔第三実施形態〕
次に、図9,10を参照して本発明の第三実施形態について説明する。
本実施形態に係る半導体装置は、図9,10に示すように、第一実施形態の半導体装置1と比較して、端子板4,5の形状のみが異なっている。
この実施形態の半導体装置では、図9に示すように、端子板4,5が、第一実施形態と同様に、モールド樹脂8の側面8cから垂直に突出する帯状に形成されている。また、二つの折曲線L1,L2が、共に端子板4,5の外部接続部42,52の突出方向に直交し、互いに平行している。ただし、本実施形態の端子板4,5では、その外部接続部42,52の一方の側端部42a,52aのうち第二折曲線L2における部分が、第一折曲線L1における部分に対してずれて位置している。
[Third embodiment]
Next, a third embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 9 and 10, the semiconductor device according to the present embodiment differs from the semiconductor device 1 of the first embodiment only in the shapes of the terminal plates 4 and 5.
In the semiconductor device of this embodiment, as shown in FIG. 9, the terminal plates 4 and 5 are formed in a strip shape that protrudes vertically from the side surface 8c of the mold resin 8 as in the first embodiment. Further, the two folding lines L1, L2 are both orthogonal to the protruding direction of the external connection portions 42, 52 of the terminal plates 4, 5, and are parallel to each other. However, in the terminal boards 4 and 5 of this embodiment, the part in the second folding line L2 of the one side end parts 42a and 52a of the external connection parts 42 and 52 is relative to the part in the first folding line L1. The position is shifted.

詳細に説明すれば、内部接続部41,51及び先端板部44,54の先端部分における端子板4,5の幅寸法は、互いに等しく設定されている。また、一方の側端部42a,52aのうち第二折曲線L2における部分は、他の部分に対して端子板4,5の幅方向に突出しており、この部分における端子板4,5の幅寸法は、内部接続部41,51や先端板部44,54の先端部分よりも大きく設定されている。
そして、一方の側端部42a,52aは、第二折曲線L2の部分から第一折曲線L1の部分あるいは先端板部44,54の先端部分に向かうにしたがって、他方の側端部42b,52bに近づくように端子板4,5の突出方向に対して傾斜している。
このように形成された端子板4,5の外部接続部42,52を、二つの折曲線L1,L2において折り曲げた状態においては、図10に示すように、外部接続部42,52をなす基端板部43,53が、内部接続部41,51側から先端板部44,54側に向かうにしたがって幅寸法が大きくなる台形状に形成されている。そして、基端板部43,53のうち一方の側端部42a,52aのみが、台形状の斜辺をなしている。
If it demonstrates in detail, the width dimension of the terminal plates 4 and 5 in the front-end | tip part of the internal connection parts 41 and 51 and the front-end | tip board parts 44 and 54 is set mutually equal. Moreover, the part in the 2nd folding line L2 of one side edge part 42a, 52a protrudes in the width direction of the terminal boards 4 and 5 with respect to another part, The width | variety of the terminal boards 4 and 5 in this part The dimensions are set to be larger than the distal end portions of the internal connection portions 41 and 51 and the distal end plate portions 44 and 54.
And one side edge part 42a, 52a is the other side edge part 42b, 52b as it goes to the part of the 1st folding line L1, or the front-end | tip part of the front-end | tip board parts 44 and 54 from the part of the 2nd folding line L2. Is inclined with respect to the protruding direction of the terminal plates 4 and 5.
In a state where the external connection portions 42 and 52 of the terminal plates 4 and 5 formed in this way are bent along the two folding lines L1 and L2, the bases forming the external connection portions 42 and 52 are formed as shown in FIG. The end plate portions 43 and 53 are formed in a trapezoidal shape whose width dimension increases from the internal connection portions 41 and 51 side toward the front end plate portions 44 and 54 side. And only one side edge part 42a, 52a among the base end board parts 43 and 53 has comprised the trapezoid-shaped hypotenuse.

本実施形態の半導体装置によれば、第一実施形態と同様の効果を奏する。
さらに、この半導体装置では、ネジ止めの際に基端板部43,53にかかる力の方向(w方向)が、一方の側端部42a,52aのうち第二折曲線L2における部分が第一折曲線L1における部分あるいは先端板部44,54の先端部分に対して端子板4,5の幅方向に沿ってずれる方向と逆向きになっている。このため、基端板部43,53に対してw方向にかかる力が、端子板4,5の長手方向に分散されることになる。
なお、図9,10における符号w1,w2は、w方向の力が斜辺とされた外部接続部42,52の一方の側端部42a,52aに沿って分散された力の方向を示している。すなわち、外部接続部の一方の側端部42a,52aが外部接続部42,52の突出方向に対して傾斜していることで、基端板部43,53の幅方向にかかる力を特に効率よく分散することができる。このため、ネジ止め時に基端板部43,53にかかる力が、端子板4,3の外部接続部42,52とモールド樹脂8との境界部分に作用することを抑えることができる。したがって、第一実施形態の場合と比較して、この境界部分にかかる応力をさらに抑制することができる。
According to the semiconductor device of the present embodiment, the same effects as those of the first embodiment can be obtained.
Furthermore, in this semiconductor device, the direction of the force applied to the base end plate portions 43 and 53 (w direction) during screwing is such that the portion on the second folding line L2 of the one side end portions 42a and 52a is the first. It is in the direction opposite to the direction along the width direction of the terminal plates 4 and 5 with respect to the portion in the folding line L1 or the tip portions of the tip plate portions 44 and 54. For this reason, the force applied to the base end plate portions 43 and 53 in the w direction is dispersed in the longitudinal direction of the terminal plates 4 and 5.
9 and 10 indicate the direction of the force distributed along one side end portion 42a, 52a of the external connection portion 42, 52 in which the force in the w direction is a hypotenuse. . That is, since the one side end portions 42a and 52a of the external connection portion are inclined with respect to the protruding direction of the external connection portions 42 and 52, the force applied in the width direction of the base end plate portions 43 and 53 is particularly efficient. Can be well dispersed. For this reason, it can suppress that the force applied to the base end plate parts 43 and 53 at the time of screwing acts on the boundary part between the external connection parts 42 and 52 of the terminal plates 4 and 3 and the mold resin 8. Therefore, compared with the case of 1st embodiment, the stress concerning this boundary part can further be suppressed.

〔第四実施形態〕
次に、図11,12を参照して本発明の第四実施形態について説明する。
この実施形態に係る半導体装置は、図11,12に示すように、第三実施形態の半導体装置と比較して、端子板4,5の形状のみが異なっている。
この実施形態の半導体装置では、図11に示すように、端子板4,5が、第一実施形態と同様に、モールド樹脂8の側面8cから垂直に突出する帯状に形成されている。また、二つの折曲線L1,L2が、共に端子板4,5の外部接続部42,52の突出方向に直交し、互いに平行している。そして、本実施形態の端子板4(5)では、その外部接続部42(52)の両方の側端部42a,42b(52a,52b)のうち第二折曲線L2における各部分が、第一折曲線L1における各部分に対してずれて位置している。
[Fourth embodiment]
Next, a fourth embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 11 and 12, the semiconductor device according to this embodiment differs from the semiconductor device according to the third embodiment only in the shapes of the terminal plates 4 and 5.
In the semiconductor device of this embodiment, as shown in FIG. 11, the terminal plates 4 and 5 are formed in a strip shape that protrudes vertically from the side surface 8c of the mold resin 8 as in the first embodiment. Further, the two folding lines L1, L2 are both orthogonal to the protruding direction of the external connection portions 42, 52 of the terminal plates 4, 5, and are parallel to each other. And in the terminal board 4 (5) of this embodiment, each part in the 2nd folding line L2 among the side end parts 42a and 42b (52a, 52b) of the external connection part 42 (52) is 1st. It is shifted from each part in the folding line L1.

具体的には、内部接続部41(51)及び先端板部44(54)の先端部分における端子板4,5の幅寸法は、互いに等しく設定されている。また、両方の側端部42a,42b(52a,52b)のうち第二折曲線L2における部分は、他の部分に対して端子板4(5)の幅方向に突出し、この部分における端子板4(5)の幅寸法は、内部接続部41(51)や先端板部44(54)の先端部分よりも大きく設定されている。
そして、一方の側端部42a(52a)は、第二折曲線L2の部分から第一折曲線L1の部分あるいは先端板部44(54)の先端部分に向かうにしたがって、他方の側端部42b(52b)に近づくように端子板4,5の突出方向に対して傾斜している。また、他方の側端部42b(52b)は、第二折曲線L2の部分から第一折曲線L1の部分あるいは先端板部44(54)の先端部分に向かうにしたがって、一方の側端部42a(52a)に近づくように端子板4,5の突出方向に対して傾斜している。
Specifically, the width dimensions of the terminal plates 4 and 5 at the tip portions of the internal connection portion 41 (51) and the tip plate portion 44 (54) are set to be equal to each other. Moreover, the part in 2nd folding line L2 protrudes in the width direction of the terminal board 4 (5) with respect to another part among both side edge part 42a, 42b (52a, 52b), and the terminal board 4 in this part The width dimension of (5) is set to be larger than the distal end portions of the internal connection portion 41 (51) and the distal end plate portion 44 (54).
And one side edge part 42a (52a) is the other side edge part 42b as it goes from the part of the 2nd folding line L2 to the part of the 1st folding line L1, or the front-end | tip part of the front-end | tip board part 44 (54). It is inclined with respect to the protruding direction of the terminal plates 4 and 5 so as to approach (52b). Further, the other side end portion 42b (52b) extends from the portion of the second fold line L2 toward the portion of the first fold line L1 or the tip portion of the tip plate portion 44 (54). It is inclined with respect to the protruding direction of the terminal plates 4 and 5 so as to approach (52a).

このように形成された端子板4(5)の外部接続部42(52)を、二つの折曲線L1,L2において折り曲げた状態においては、図10に示すように、外部接続部42(52)をなす基端板部43(53)が、内部接続部41(51)側から先端板部44(54)側に向かうにしたがって幅寸法が大きくなる台形状に形成されている。そして、基端板部43(53)のうち両方の側端部42a,42b(52a,52b)が、台形状の斜辺をなしている。   In the state where the external connection portion 42 (52) of the terminal plate 4 (5) formed in this way is bent along the two folding lines L1 and L2, as shown in FIG. 10, the external connection portion 42 (52) The base end plate portion 43 (53) is formed in a trapezoidal shape in which the width dimension increases from the internal connection portion 41 (51) side toward the distal end plate portion 44 (54) side. And both side edge part 42a, 42b (52a, 52b) of the base end board part 43 (53) has comprised the trapezoid-shaped hypotenuse.

本実施形態の半導体装置によれば、第三実施形態と同様の効果を奏する。
すなわち、この半導体装置では、端子板4(5)の一方の側端部42a(52a)の形状が第三実施形態と同様であるため、ネジ止めの際に基端板部43(53)に対してw方向にかかる力を、端子板4(5)の長手方向(w1方向及びw2方向)に分散することができる。
さらに、本実施形態の半導体装置では、端子板4(5)の他方の側端部42b(52b)の形状が一方の側端部42a(52a)と逆向きとなっているため、例えばネジ止めの際に先端板部44(54)を回転させる向きがr方向と逆向きとなり(逆ネジであっても)、基端板部43(53)にw方向と逆向きの力がかかっても、この力を端子板4,5の長手方向に分散することもできる。
According to the semiconductor device of the present embodiment, the same effects as those of the third embodiment can be obtained.
That is, in this semiconductor device, since the shape of one side end portion 42a (52a) of the terminal plate 4 (5) is the same as that of the third embodiment, the base end plate portion 43 (53) is fixed when screwed. On the other hand, the force applied in the w direction can be dispersed in the longitudinal direction (the w1 direction and the w2 direction) of the terminal plate 4 (5).
Furthermore, in the semiconductor device of this embodiment, the shape of the other side end portion 42b (52b) of the terminal plate 4 (5) is opposite to that of the one side end portion 42a (52a). In this case, the direction of rotating the distal end plate portion 44 (54) is opposite to the r direction (even if it is a reverse screw), and even if a force opposite to the w direction is applied to the proximal end plate portion 43 (53). This force can also be distributed in the longitudinal direction of the terminal plates 4 and 5.

〔第五実施形態〕
次に、図13,14を参照して本発明の第五実施形態について説明する。
本実施形態に係る半導体装置は、図13,14に示すように、第一実施形態の半導体装置と比較して、端子板4,5の形状のみが異なっている。
この実施形態の半導体装置では、図13に示すように、端子板4,5が、第一実施形態と同様に、モールド樹脂8の側面8cから垂直に突出する帯状に形成されている。また、二つの折曲線L1,L2が、共に端子板4,5の外部接続部42,52の突出方向に直交し、互いに平行している。そして、本実施形態の端子板4,5では、その外部接続部42,52の他方の側端部42b,52bのうち第二折曲線L2における部分が、第一折曲線L1における部分に対してずれて位置している。
[Fifth embodiment]
Next, a fifth embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 13 and 14, the semiconductor device according to the present embodiment is different from the semiconductor device according to the first embodiment only in the shapes of the terminal plates 4 and 5.
In the semiconductor device of this embodiment, as shown in FIG. 13, the terminal plates 4 and 5 are formed in a belt shape that protrudes vertically from the side surface 8c of the mold resin 8 as in the first embodiment. Further, the two folding lines L1, L2 are both orthogonal to the protruding direction of the external connection portions 42, 52 of the terminal plates 4, 5, and are parallel to each other. And in the terminal boards 4 and 5 of this embodiment, the part in the 2nd folding line L2 among the other side edge parts 42b and 52b of the external connection parts 42 and 52 is with respect to the part in the 1st folding line L1. The position is shifted.

詳細に説明すれば、内部接続部41,51及び先端板部44,54の先端部分における端子板4,5の幅寸法は、互いに等しく設定されている。また、他方の側端部42b,52bのうち第二折曲線L2における部分は、他の部分に対して端子板4,5の幅方向に窪んでおり、この部分における端子板4,5の幅寸法は、内部接続部41,51や先端板部44,54の先端部分よりも小さく設定されている。
そして、他方の側端部42b,52bは、第二折曲線L2の部分から第一折曲線L1の部分あるいは先端板部44,54の先端部分に向かうにしたがって、一方の側端部42a,52aから離れるように端子板4,5の突出方向に対して傾斜している。
このように形成された端子板4,5の外部接続部42,52を、二つの折曲線L1,L2において折り曲げた状態においては、図14に示すように、外部接続部42,52をなす基端板部43,53が、内部接続部41,51側から先端板部44,54側に向かうにしたがって幅寸法が小さくなる台形状に形成されている。そして、基端板部43,53のうち他方の側端部42b,52bのみが、台形状の斜辺をなしている。
If it demonstrates in detail, the width dimension of the terminal plates 4 and 5 in the front-end | tip part of the internal connection parts 41 and 51 and the front-end | tip board parts 44 and 54 is set mutually equal. Moreover, the part in 2nd folding line L2 among the other side edge parts 42b and 52b is depressed in the width direction of the terminal boards 4 and 5 with respect to another part, The width | variety of the terminal boards 4 and 5 in this part The dimensions are set smaller than the front end portions of the internal connection portions 41 and 51 and the front end plate portions 44 and 54.
And the other side edge part 42b, 52b is one side edge part 42a, 52a as it goes to the part of the 1st folding line L1, or the front-end | tip part of the front-end | tip board parts 44 and 54 from the part of the 2nd folding line L2. It inclines with respect to the protrusion direction of the terminal boards 4 and 5 so that it may leave | separate from.
In the state where the external connection portions 42 and 52 of the terminal plates 4 and 5 formed in this way are bent along the two folding lines L1 and L2, the bases forming the external connection portions 42 and 52 are formed as shown in FIG. The end plate portions 43 and 53 are formed in a trapezoidal shape whose width dimension decreases from the internal connection portions 41 and 51 side toward the tip plate portions 44 and 54 side. And only the other side edge part 42b, 52b among the base end board parts 43 and 53 has comprised the trapezoid-shaped hypotenuse.

本実施形態の半導体装置によれば、第三実施形態と同様の効果を奏する。
すなわち、ネジ止めの際に基端板部43,53にかかる力の方向(w方向)が、他方の側端部42b,52bのうち第二折曲線L2における部分が第一折曲線L1における部分あるいは先端板部44,54の先端部分に対して端子板4,5の幅方向に沿ってずれる方向と逆向きになっている。このため、基端板部43,53に対してw方向にかかる力が、端子板4,5の長手方向に分散されることになる。
なお、図13,14における符号w3,w4は、w方向の力が斜辺とされた外部接続部42,52の他方の側端部42b,52bに沿って分散された力の方向を示している。すなわち、外部接続部の他方の側端部42b,52bが外部接続部42,52の突出方向に対して傾斜していることで、基端板部43,53の幅方向にかかる力を特に効率よく分散することができる。したがって、第一実施形態の場合と比較して、端子板4,3の外部接続部42,52とモールド樹脂8との境界部分にかかる応力をさらに抑制することができる。
According to the semiconductor device of the present embodiment, the same effects as those of the third embodiment can be obtained.
That is, the direction (w direction) of the force applied to the base end plate portions 43 and 53 during screwing is such that the portion on the second folding line L2 of the other side end portions 42b and 52b is the portion on the first folding line L1. Alternatively, it is opposite to the direction shifted along the width direction of the terminal plates 4 and 5 with respect to the tip portions of the tip plate portions 44 and 54. For this reason, the force applied to the base end plate portions 43 and 53 in the w direction is dispersed in the longitudinal direction of the terminal plates 4 and 5.
13 and 14 indicate the direction of the force distributed along the other side end portions 42b and 52b of the external connection portions 42 and 52 in which the force in the w direction is the hypotenuse. . That is, since the other side end portions 42b and 52b of the external connection portion are inclined with respect to the protruding direction of the external connection portions 42 and 52, the force applied in the width direction of the base end plate portions 43 and 53 is particularly efficient. Can be well dispersed. Therefore, compared with the case of 1st embodiment, the stress concerning the boundary part of the external connection parts 42 and 52 of the terminal boards 4 and 3 and the mold resin 8 can further be suppressed.

〔第六実施形態〕
次に、図15,16を参照して本発明の第六実施形態について説明する。
図8に示すように、この実施形態に係る半導体装置は、図15,16に示すように、第三〜第五実施形態の半導体装置と比較して、端子板4,5の形状のみが異なっている。
この実施形態の半導体装置では、図15に示すように、端子板4,5が、第一実施形態と同様に、モールド樹脂8の側面8cから垂直に突出する帯状に形成されている。また、二つの折曲線L1,L2が、共に端子板4,5の外部接続部42,52の突出方向に直交し、互いに平行している。
[Sixth embodiment]
Next, a sixth embodiment of the present invention will be described with reference to FIGS.
As shown in FIG. 8, the semiconductor device according to this embodiment differs from the semiconductor devices of the third to fifth embodiments only in the shapes of the terminal plates 4 and 5, as shown in FIGS. ing.
In the semiconductor device of this embodiment, as shown in FIG. 15, the terminal plates 4 and 5 are formed in a belt shape that protrudes vertically from the side surface 8c of the mold resin 8 as in the first embodiment. Further, the two folding lines L1, L2 are both orthogonal to the protruding direction of the external connection portions 42, 52 of the terminal plates 4, 5, and are parallel to each other.

そして、本実施形態の端子板4,5では、第三実施形態と同様に、その外部接続部42,52の一方の側端部42a,52aのうち第二折曲線L2における部分が、第一折曲線L1における部分や先端板部44,54の先端部分に対して、端子板4,5の幅方向に突出している。さらに、この端子板4,5では、第五実施形態と同様に、その外部接続部42,52の他方の側端部42b,52bのうち第二折曲線L2における部分が、第一折曲線L1における部分や先端板部44,54の先端部分に対して、端子板4,5の幅方向に窪んでいる。
さらに、本実施形態では、一方の側端部42a,52aのうち第二折曲線L2の部分の端子板4,5の幅方向への突出長さと、他方の側端部42b,52bのうち第二折曲線L2の部分の幅方向への窪み長さが等しく設定されている。このため、端子板4,5の幅寸法は、端子板4,5の長手方向にわたって一定とされ、端子板4,5の外部接続部42,52が端子板4,5の幅方向に蛇行している。
And in the terminal boards 4 and 5 of this embodiment, the part in the 2nd folding line L2 among the one side edge parts 42a and 52a of the external connection part 42 and 52 is 1st like 3rd embodiment. It protrudes in the width direction of the terminal plates 4 and 5 with respect to the portion in the folding line L1 and the tip portions of the tip plate portions 44 and. Further, in the terminal plates 4 and 5, as in the fifth embodiment, the portion of the other side end portions 42b and 52b of the external connection portions 42 and 52 in the second folding line L2 is the first folding line L1. Are recessed in the width direction of the terminal plates 4 and 5 with respect to the portions of the terminal plates 4 and 54.
Further, in the present embodiment, the length of the terminal plate 4 and 5 in the width direction of the portion of the second folding line L2 in one of the side end portions 42a and 52a and the first of the other side end portions 42b and 52b. The indentation length in the width direction of the part of the double folding line L2 is set equal. For this reason, the width dimension of the terminal plates 4 and 5 is constant over the longitudinal direction of the terminal plates 4 and 5, and the external connection portions 42 and 52 of the terminal plates 4 and 5 meander in the width direction of the terminal plates 4 and 5. ing.

以上のように形成された端子板4,5の外部接続部42,52を、二つの折曲線L1,L2において折り曲げた状態においては、図16に示すように、外部接続部42,52をなす基端板部43,53が、内部接続部41,51側から先端板部44,54側に向かうにしたがって、ネジ止めの際に基端板部43,53にかかる力の方向(w方向)と逆向きに傾く平行四辺形に形成されている。   In the state where the external connection portions 42 and 52 of the terminal plates 4 and 5 formed as described above are bent along the two folding lines L1 and L2, the external connection portions 42 and 52 are formed as shown in FIG. The direction of the force applied to the base end plate portions 43, 53 during screwing as the base end plate portions 43, 53 move from the internal connection portions 41, 51 side to the front end plate portions 44, 54 side (w direction). It is formed in a parallelogram inclined in the opposite direction.

本実施形態の半導体装置によれば、第三、第五実施形態と同様の効果を奏する。
すなわち、この半導体装置では、端子板4,5の一方の側端部42a,52aの形状が第三実施形態と同様であるため、ネジ止めの際に基端板部43,53に対してw方向にかかる力を、一方の側端部42a,52aに沿って端子板4,5の長手方向(w1方向及びw2方向)に分散することができる。また、端子板4,5の他方の側端部42b,52bの形状が第五実施形態と同様であるため、ネジ止めの際に基端板部43,53に対してw方向にかかる力を、他方の側端部42b,52bに沿って端子板4,5の長手方向(w3方向及びw4方向)に分散することができる。
なお、この第六実施形態において、端子板4,5の外部接続部42,52は、少なくとも端子板4,5の幅方向に蛇行していればよく、例えば、外部接続部42,52の幅寸法はその突出方向に変化していてもよい。
According to the semiconductor device of this embodiment, the same effects as those of the third and fifth embodiments can be obtained.
That is, in this semiconductor device, since the shape of one side end portion 42a, 52a of the terminal plates 4, 5 is the same as that of the third embodiment, the screw is fixed with respect to the base end plate portions 43, 53 when screwing. The force applied in the direction can be distributed in the longitudinal direction (the w1 direction and the w2 direction) of the terminal plates 4 and 5 along the one side end portions 42a and 52a. Moreover, since the shape of the other side end portions 42b and 52b of the terminal plates 4 and 5 is the same as that of the fifth embodiment, a force applied in the w direction to the base end plate portions 43 and 53 at the time of screwing is applied. The terminal plates 4 and 5 can be dispersed in the longitudinal direction (w3 direction and w4 direction) along the other side end portions 42b and 52b.
In the sixth embodiment, the external connection portions 42 and 52 of the terminal plates 4 and 5 need only meander in the width direction of the terminal plates 4 and 5, for example, the width of the external connection portions 42 and 52. The dimension may change in the protruding direction.

〔第七実施形態〕
次に、図17を参照して本発明の第六実施形態について説明する。
この実施形態に係る半導体装置は、図17に示すように、第一実施形態の半導体装置と比較して、モールド樹脂8の形状のみが異なっている。
すなわち、この実施形態の半導体装置では、図17に示すように、モールド樹脂8の上面8aと側面8cとの角部に、この角部に配される端子板4(5)の外部接続部42(52)の両方の側端部42a,42b(52a,52b)に当接する球状突起83が一対形成されている。そして、これら一対の球状突起83には、外部接続部42(52)のうち第二折曲線L2に位置する部分が当接する。
なお、本実施形態においては、収容凹部82の両側壁部をモールド樹脂8の上面8aから突出させるように延長した上で、この両側壁部の内側面から収容凹部82の幅方向内側に突出させるように球状突起83を形成しているが、これに限ることはない。
[Seventh embodiment]
Next, a sixth embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 17, the semiconductor device according to this embodiment differs from the semiconductor device according to the first embodiment only in the shape of the mold resin 8.
That is, in the semiconductor device of this embodiment, as shown in FIG. 17, the external connection portion 42 of the terminal plate 4 (5) disposed at the corner portion between the upper surface 8 a and the side surface 8 c of the mold resin 8. A pair of spherical protrusions 83 that are in contact with both side end portions 42a and 42b (52a and 52b) of (52) are formed. And a part located in the 2nd folding line L2 among the external connection parts 42 (52) contact | abuts these pair of spherical protrusion 83. FIG.
In the present embodiment, the both side walls of the housing recess 82 are extended so as to protrude from the upper surface 8a of the mold resin 8, and then protruded inward in the width direction of the housing recess 82 from the inner surface of the both side walls. The spherical protrusion 83 is formed as described above, but is not limited thereto.

この実施形態の半導体装置によれば、ネジ止めの際にはモールド樹脂8の上面8aと側面8cとの角部に配される外部接続部42(52)にもその幅方向(w方向)に力がかかるが、この際には角部に位置する外部接続部42(52)の他方の側端部42b(52b)に球状突起83が当接することで、端子板4,3の外部接続部42,52とモールド樹脂8との境界部分にかかる応力をさらに抑制することができる。
また、外部接続部42,52の側端部42a,42b(52a,52b)が球状突起83に当接する際、球状突起83にかかる応力は分散されるため、例えばモールド樹脂8自体の剛性が低くてもネジ止めの際に端子板4(5)の外部接続部42(52)を十分に支持することができる。
なお、この第七実施形態の構成は、前述した第二〜第六実施形態のいずれにも適用することが可能である。
According to the semiconductor device of this embodiment, the external connection portion 42 (52) disposed at the corner between the upper surface 8a and the side surface 8c of the mold resin 8 is also provided in the width direction (w direction) when screwing. At this time, the spherical protrusion 83 abuts on the other side end portion 42b (52b) of the external connection portion 42 (52) located at the corner, so that the external connection portions of the terminal plates 4 and 3 are connected. The stress applied to the boundary portion between 42 and 52 and the mold resin 8 can be further suppressed.
Further, when the side end portions 42a and 42b (52a and 52b) of the external connection portions 42 and 52 are in contact with the spherical protrusion 83, the stress applied to the spherical protrusion 83 is dispersed, so that, for example, the rigidity of the mold resin 8 itself is low. However, the external connection portion 42 (52) of the terminal plate 4 (5) can be sufficiently supported during screwing.
The configuration of the seventh embodiment can be applied to any of the second to sixth embodiments described above.

以上、第一〜第七実施形態により本発明の詳細を説明したが、本発明は上述した実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
例えば、全ての実施形態では、半導体装置1を製造する際に使用するダイパッド3及び端子板4,5が、個別に構成されるとしたが、例えば図18に示すように、銅材をはじめとする導電性板材にプレス加工やエッチング加工等を施してなるリードフレーム100によって一体に形成されてもよい。
このリードフレーム100は、第一実施形態の半導体装置1と同様の位置にダイパッド3及び端子板4,5を配置した上で、これらダイパッド3及び端子板4,5を同一の枠体部9に連結して構成されている。ここで、端子板4,5は、モールド樹脂8の外側に配される外部接続部42,52を枠体部9に直接接続することで、枠体部9に連結されている。一方、ダイパッド3は、モールド樹脂8の内側から外側まで延びる連結リード10を介して枠体部9に連結されている。
The details of the present invention have been described above with reference to the first to seventh embodiments. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. Is possible.
For example, in all the embodiments, the die pad 3 and the terminal plates 4 and 5 used when manufacturing the semiconductor device 1 are individually configured. For example, as shown in FIG. It may be integrally formed by a lead frame 100 formed by subjecting the conductive plate material to be pressed or etched.
In the lead frame 100, the die pad 3 and the terminal plates 4, 5 are arranged at the same position as the semiconductor device 1 of the first embodiment, and then the die pad 3 and the terminal plates 4, 5 are placed on the same frame body portion 9. Concatenated. Here, the terminal plates 4 and 5 are connected to the frame body portion 9 by directly connecting the external connection portions 42 and 52 arranged outside the mold resin 8 to the frame body portion 9. On the other hand, the die pad 3 is connected to the frame body portion 9 via a connecting lead 10 extending from the inside to the outside of the mold resin 8.

このリードフレーム100を用いて第一実施形態の半導体装置1を製造する場合には、接続工程や樹脂封止工程においてダイパッド3及び端子板4,5の相対的な位置決めを行う必要が無いため、半導体装置1の製造効率の向上を図ることができる。
また、第一、第二折曲工程を行う際には、少なくとも端子板4,5の外部接続部42,52のみを枠体部9から切り離せばよいため、半導体装置1を枠体部9に支持させておくことができる。特に、一つの半導体装置1の製造に要するダイパッド3及び端子板4,5のユニットを同一のリードフレーム100に複数形成した場合には、第一、第二折曲工程において複数の半導体装置1を同一の枠体部9に支持させた状態で、複数の端子板4,5の折り曲げ加工を一度にまとめて実施することが可能となる。また、第一、第二折曲工程において複数の半導体装置1が同一の枠体部9に支持されていることで、複数の半導体装置1を別個の治具等により個別に支持する必要がなくなり、半導体装置1の製造効率の向上を図ることができる。
When manufacturing the semiconductor device 1 of the first embodiment using this lead frame 100, it is not necessary to perform relative positioning of the die pad 3 and the terminal plates 4 and 5 in the connection process and the resin sealing process. The manufacturing efficiency of the semiconductor device 1 can be improved.
Further, when performing the first and second bending steps, at least only the external connection portions 42 and 52 of the terminal plates 4 and 5 have to be separated from the frame body portion 9, so that the semiconductor device 1 is attached to the frame body portion 9. Can be supported. In particular, when a plurality of units of the die pad 3 and the terminal plates 4 and 5 required for manufacturing one semiconductor device 1 are formed on the same lead frame 100, the plurality of semiconductor devices 1 are formed in the first and second bending steps. It is possible to collectively perform the bending processing of the plurality of terminal plates 4 and 5 at a time while being supported by the same frame body portion 9. In addition, since the plurality of semiconductor devices 1 are supported by the same frame portion 9 in the first and second bending steps, it is not necessary to individually support the plurality of semiconductor devices 1 with separate jigs or the like. Thus, the manufacturing efficiency of the semiconductor device 1 can be improved.

また、全ての実施形態において、ヒートシンク2とダイパッド3及び端子板4,5との間には、モールド樹脂8が介在するとしたが、少なくともヒートシンク2とダイパッド3及び端子板4,5とが電気的に絶縁されていればよく、例えば別個の絶縁性部材を介在させてもよい。
さらに、全ての実施形態においては、ダイパッド3が、一対の端子板4,5と間隔をあけて配されるとしたが、例えば第一端子板4の内部接続部41に一体に形成されてもよい。この場合、ダイパッド3と第一端子板4とを電気接続する接続子7が不要となるため、半導体装置1の製造コスト削減及び製造効率向上を図ることができる。
In all the embodiments, the mold resin 8 is interposed between the heat sink 2 and the die pad 3 and the terminal plates 4 and 5, but at least the heat sink 2 and the die pad 3 and the terminal plates 4 and 5 are electrically connected. For example, a separate insulating member may be interposed.
Furthermore, in all the embodiments, the die pad 3 is arranged with a distance from the pair of terminal plates 4, 5. However, for example, the die pad 3 may be formed integrally with the internal connection portion 41 of the first terminal plate 4. Good. In this case, since the connector 7 for electrically connecting the die pad 3 and the first terminal plate 4 is not required, the manufacturing cost of the semiconductor device 1 can be reduced and the manufacturing efficiency can be improved.

1 半導体装置
2 ヒートシンク
3 ダイパッド
4 第一端子板
41 内部接続部(一端部)
42 外部接続部(他端部)
42a,42b 側端部
43 基端板部
44 先端板部
45 挿通孔
5 第二端子板
51 内部接続部(一端部)
52 外部接続部(他端部)
52a,52b 側端部
53 基端板部
54 先端板部
55 挿通孔
6 半導体チップ
7 接続子
8 モールド樹脂
8a 上面(第一外面)
8c 側面(第二外面)
81 ネジ止め部
82 収容凹部
83 球状突起
DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Heat sink 3 Die pad 4 First terminal board 41 Internal connection part (one end part)
42 External connection (other end)
42a, 42b Side end portion 43 Base end plate portion 44 Front end plate portion 45 Insertion hole 5 Second terminal plate 51 Internal connection portion (one end portion)
52 External connection (other end)
52a, 52b Side end 53 Base end plate 54 Front end plate 55 Insertion hole 6 Semiconductor chip 7 Connector 8 Mold resin 8a Upper surface (first outer surface)
8c Side surface (second outer surface)
81 Screwing part 82 Accommodating recess 83 Spherical protrusion

Claims (8)

端子板の長手方向の一端部と半導体チップとを電気接続した上で、前記一端部及び前記半導体チップをモールド樹脂により封止し、前記端子板の他端部を前記モールド樹脂の外面から突出させてなる半導体装置であって、
前記モールド樹脂の平坦な第一外面には、前記端子板の他端部の突出方向の先端をネジにより固定するためのネジ止め部が形成され、
前記端子板の他端部は、前記第一外面に隣り合うと共に当該第一外面と異なる向きに面する前記モールド樹脂の第二外面から略垂直に突出し
前記端子板の他端部は、前記一端部との間の第一折曲線において折り曲げられることで前記第二外面上に配される突出方向の基端板部と、当該基端板部との間の第二折曲線において折り曲げられることで前記ネジ止め部に対向するように前記第一外面上に配される先端板部とを備え、
当該先端板部には、その厚さ方向に貫通して前記ネジを挿通させる挿通孔が形成され、
前記他端部の突出方向に沿う前記第一折曲線と前記第二折曲線との間隔が、前記端子板の幅方向の一方側から他方側に向かうにしたがって狭くなっていることを特徴とする半導体装置。
After electrically connecting one end of the terminal plate in the longitudinal direction and the semiconductor chip, the one end and the semiconductor chip are sealed with a mold resin, and the other end of the terminal plate is projected from the outer surface of the mold resin. A semiconductor device comprising:
On the flat first outer surface of the mold resin, a screwing portion for fixing the tip in the protruding direction of the other end of the terminal board with a screw is formed,
The other end of the terminal plate protrudes substantially perpendicularly from the second outer surface of the mold resin that is adjacent to the first outer surface and faces in a direction different from the first outer surface ,
The other end portion of the terminal plate is bent at a first folding line between the one end portion and a base end plate portion in a protruding direction arranged on the second outer surface, and the base end plate portion A tip plate disposed on the first outer surface so as to be opposed to the screwing portion by being bent at a second folding curve therebetween,
The tip plate portion is formed with an insertion hole through which the screw penetrates in the thickness direction,
An interval between the first fold curve and the second fold curve along the protruding direction of the other end is narrowed from one side to the other side in the width direction of the terminal board. Semiconductor device.
端子板の長手方向の一端部と半導体チップとを電気接続した上で、前記一端部及び前記半導体チップをモールド樹脂により封止し、前記端子板の他端部を前記モールド樹脂の外面から突出させてなる半導体装置であって、
前記モールド樹脂の平坦な第一外面には、前記端子板の他端部の突出方向の先端をネジにより固定するためのネジ止め部が形成され、
前記端子板の他端部は、前記第一外面に隣り合うと共に当該第一外面と異なる向きに面する前記モールド樹脂の第二外面から略垂直に突出し
前記端子板の他端部は、前記一端部との間の第一折曲線において折り曲げられることで前記第二外面上に配される突出方向の基端板部と、当該基端板部との間の第二折曲線において折り曲げられることで前記ネジ止め部に対向するように前記第一外面上に配される先端板部とを備え、
当該先端板部には、その厚さ方向に貫通して前記ネジを挿通させる挿通孔が形成され、
前記第二折曲線における前記他端部の幅方向の少なくとも一方の側端部が、前記第一折曲線における前記他端部の幅方向の前記側端部に対して前記幅方向にずれて位置していることを特徴とする半導体装置。
After electrically connecting one end of the terminal plate in the longitudinal direction and the semiconductor chip, the one end and the semiconductor chip are sealed with a mold resin, and the other end of the terminal plate is projected from the outer surface of the mold resin. A semiconductor device comprising:
On the flat first outer surface of the mold resin, a screwing portion for fixing the tip in the protruding direction of the other end of the terminal board with a screw is formed,
The other end of the terminal plate protrudes substantially perpendicularly from the second outer surface of the mold resin that is adjacent to the first outer surface and faces in a direction different from the first outer surface ,
The other end portion of the terminal plate is bent at a first folding line between the one end portion and a base end plate portion in a protruding direction arranged on the second outer surface, and the base end plate portion A tip plate disposed on the first outer surface so as to be opposed to the screwing portion by being bent at a second folding curve therebetween,
The tip plate portion is formed with an insertion hole through which the screw penetrates in the thickness direction,
At least one side end portion in the width direction of the other end portion in the second folding line is shifted in the width direction with respect to the side end portion in the width direction of the other end portion in the first folding curve. A semiconductor device characterized by that .
前記側端部が前記他端部の突出方向に対して傾斜していることを特徴とする請求項2に記載の半導体装置。 The semiconductor device according to claim 2 , wherein the side end portion is inclined with respect to a protruding direction of the other end portion. 前記側端部のうち前記第二折曲線における部分が、他の部分に対して前記端子板の幅方向に突出していることを特徴とする請求項2又は請求項3に記載の半導体装置。 The semiconductor device according to claim 2 or claim 3 portions in said second folding lines of the side end portion, characterized in that protrudes in the width direction of the terminal board with respect to other portions. 前記側端部のうち前記第二折曲線における部分が、他の部分に対して前記端子板の幅方向に窪んでいることを特徴とする請求項2又は請求項3に記載の半導体装置。 The semiconductor device according to claim 2 or claim 3 portions in said second folding lines of the side end, characterized in that recessed in a width direction of the terminal board with respect to other portions. 前記モールド樹脂の前記第二外面は、前記基端板部を収容して当該基端板部の側端部を支持する収容凹部を有して形成されていることを特徴とする請求項1から請求項5のいずれか1項に記載の半導体装置。 Said second outer surface of the mold resin from claim 1, characterized in that to accommodate the proximal end plate portion is formed with a receiving recess for supporting the side end portion of the base end plate portion The semiconductor device according to claim 5 . 前記モールド樹脂の前記第一外面と前記第二外面との角部に、当該角部に配される前記他端部の幅方向の側端部に当接する球状突起が形成されていることを特徴とする請求項1から請求項6のいずれか1項に記載の半導体装置。 Spherical protrusions are formed at the corners of the first outer surface and the second outer surface of the mold resin so as to come into contact with the side end portions in the width direction of the other end portions arranged at the corner portions. the semiconductor device according to any one of claims 1 to 6 to. 請求項1から請求項7のいずれか1項に記載の半導体装置に対し、
前記基端板部と前記先端板部とのなす角度が前記第二外面と前記第一外面とのなす角度となるように、前記第二折曲線において前記他端部を折り曲げた後に、
前記基端板部が前記第二外面上に配されるように、前記第一折曲線において前記他端部を前記一端部に対して折り曲げることを特徴とする半導体装置の製造方法。
The semiconductor device according to any one of claims 1 to 7 ,
After bending the other end portion in the second folding curve so that an angle formed by the base end plate portion and the tip end plate portion is an angle formed by the second outer surface and the first outer surface,
A method of manufacturing a semiconductor device, comprising: bending the other end portion with respect to the one end portion in the first folding line so that the base end plate portion is disposed on the second outer surface.
JP2010212328A 2010-09-22 2010-09-22 Semiconductor device and manufacturing method thereof Expired - Fee Related JP5581158B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010212328A JP5581158B2 (en) 2010-09-22 2010-09-22 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010212328A JP5581158B2 (en) 2010-09-22 2010-09-22 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2012069666A JP2012069666A (en) 2012-04-05
JP5581158B2 true JP5581158B2 (en) 2014-08-27

Family

ID=46166595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010212328A Expired - Fee Related JP5581158B2 (en) 2010-09-22 2010-09-22 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP5581158B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7026865B1 (en) * 2021-05-17 2022-02-28 三菱電機株式会社 Power module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6352449A (en) * 1986-08-22 1988-03-05 Hitachi Ltd Semiconductor device
JP2530901Y2 (en) * 1991-06-28 1997-04-02 関西日本電気株式会社 Chip type electronic components
JPH1022435A (en) * 1996-07-02 1998-01-23 Hitachi Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JP2012069666A (en) 2012-04-05

Similar Documents

Publication Publication Date Title
JP6304974B2 (en) Semiconductor device
JP5341114B2 (en) Microelectronic chip assembly having a groove with a wire element and at least one bump for securing the wire element
KR100655218B1 (en) Three dimensional semiconductor module having multilateral-type ground block
US20130285232A1 (en) Semiconductor package module
JP2018174017A (en) socket
JP2004158430A (en) Contact for lga socket
US9806010B2 (en) Package module and method of fabricating the same
JP5218442B2 (en) Power semiconductor device
JP2018174018A (en) socket
US7381060B2 (en) Electrical connector array
JP5950684B2 (en) Semiconductor device
US20110312213A1 (en) Flat Cable Wiring Structure
JP5743564B2 (en) Electronic circuit device and manufacturing method thereof
JP5581158B2 (en) Semiconductor device and manufacturing method thereof
JP2002009217A (en) Resin-sealed semiconductor device
JP2006054090A (en) Ic socket and ic socket assembly
JP6619058B2 (en) Housed IC components
JP6257474B2 (en) Power circuit device
JP2009193677A (en) Adapter, socket, electronic device, and mounting method
JP2009164511A (en) Semiconductor device and method of manufacturing the same
JP3813120B2 (en) Semiconductor device package
JP4913798B2 (en) System comprising thermal conductor and method of assembly
JP6186204B2 (en) Semiconductor device and lead frame
JP2006114646A (en) Substrate device
JP2012094713A (en) Resin-sealed-type semiconductor device and elastic connector

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130920

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140424

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140507

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140526

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140617

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140714

R150 Certificate of patent or registration of utility model

Ref document number: 5581158

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees