JP5891100B2 - 半導体装置及びデータ送信方法 - Google Patents
半導体装置及びデータ送信方法 Download PDFInfo
- Publication number
- JP5891100B2 JP5891100B2 JP2012101655A JP2012101655A JP5891100B2 JP 5891100 B2 JP5891100 B2 JP 5891100B2 JP 2012101655 A JP2012101655 A JP 2012101655A JP 2012101655 A JP2012101655 A JP 2012101655A JP 5891100 B2 JP5891100 B2 JP 5891100B2
- Authority
- JP
- Japan
- Prior art keywords
- signal
- retransmission request
- circuit
- delayed
- data signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L1/00—Arrangements for detecting or preventing errors in the information received
- H04L1/004—Arrangements for detecting or preventing errors in the information received by using forward error control
- H04L1/0041—Arrangements at the transmitter end
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L1/00—Arrangements for detecting or preventing errors in the information received
- H04L1/0001—Systems modifying transmission characteristics according to link quality, e.g. power backoff
- H04L1/0023—Systems modifying transmission characteristics according to link quality, e.g. power backoff characterised by the signalling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Quality & Reliability (AREA)
- Dc Digital Transmission (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012101655A JP5891100B2 (ja) | 2012-04-26 | 2012-04-26 | 半導体装置及びデータ送信方法 |
| US13/860,040 US8948276B2 (en) | 2012-04-26 | 2013-04-10 | Semiconductor device and data transmission method |
| CN201310146752.4A CN103378831B (zh) | 2012-04-26 | 2013-04-25 | 半导体器件及数据发送方法 |
| US14/575,045 US9166738B2 (en) | 2012-04-26 | 2014-12-18 | Semiconductor device and data transmission method |
| US14/856,039 US20160006542A1 (en) | 2012-04-26 | 2015-09-16 | Semiconductor device and data transmission method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012101655A JP5891100B2 (ja) | 2012-04-26 | 2012-04-26 | 半導体装置及びデータ送信方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013229815A JP2013229815A (ja) | 2013-11-07 |
| JP2013229815A5 JP2013229815A5 (enExample) | 2015-03-19 |
| JP5891100B2 true JP5891100B2 (ja) | 2016-03-22 |
Family
ID=49463462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012101655A Expired - Fee Related JP5891100B2 (ja) | 2012-04-26 | 2012-04-26 | 半導体装置及びデータ送信方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US8948276B2 (enExample) |
| JP (1) | JP5891100B2 (enExample) |
| CN (1) | CN103378831B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9240752B2 (en) | 2013-03-26 | 2016-01-19 | Stmicroelectronics S.R.L. | Power oscillator apparatus with transformer-based power combining |
| US9306614B2 (en) * | 2013-03-26 | 2016-04-05 | Stmicroelectronics S.R.L. | Power oscillator apparatus with transformer-based power combining for galvanically-isolated bidirectional data communication and power transfer |
| WO2015061370A1 (en) | 2013-10-21 | 2015-04-30 | Milwaukee Electric Tool Corporation | Adapter for power tool devices |
| JP6591637B2 (ja) * | 2013-11-13 | 2019-10-16 | ローム株式会社 | 半導体装置および半導体モジュール |
| JP6395304B2 (ja) | 2013-11-13 | 2018-09-26 | ローム株式会社 | 半導体装置および半導体モジュール |
| JP6248649B2 (ja) * | 2014-01-23 | 2017-12-20 | 株式会社デンソー | 絶縁通信装置 |
| JP6383607B2 (ja) | 2014-08-25 | 2018-08-29 | ルネサスエレクトロニクス株式会社 | 受信装置、通信装置、及び通信方法 |
| US9450398B2 (en) * | 2014-12-30 | 2016-09-20 | Diodes Incorporated | Protection circuit for electronic system |
| JP6272509B2 (ja) * | 2015-01-20 | 2018-01-31 | 三菱電機株式会社 | 信号伝達装置 |
| JP6557562B2 (ja) * | 2015-03-17 | 2019-08-07 | ルネサスエレクトロニクス株式会社 | 送信回路及び半導体装置 |
| EP3070896A1 (en) * | 2015-03-17 | 2016-09-21 | Renesas Electronics Corporation | Transmitter circuit, semiconductor apparatus and data transmission method |
| US10147722B2 (en) * | 2016-08-12 | 2018-12-04 | Renesas Electronics America Inc. | Isolated circuit formed during back end of line process |
| JP6921784B2 (ja) * | 2018-05-31 | 2021-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN110572142A (zh) * | 2019-08-22 | 2019-12-13 | 宜宾市叙芯半导体有限公司 | 应用于集成磁隔离芯片的边沿转换方法及编解码电路 |
| US11716117B2 (en) * | 2020-02-14 | 2023-08-01 | Texas Instruments Incorporated | Circuit support structure with integrated isolation circuitry |
| JPWO2022075246A1 (enExample) * | 2020-10-07 | 2022-04-14 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625265A (en) * | 1995-06-07 | 1997-04-29 | Kollmorgen Corporation | Compact, high efficiency electronic motor controller with isolated gate drive for power transistors |
| US5952849A (en) * | 1997-02-21 | 1999-09-14 | Analog Devices, Inc. | Logic isolator with high transient immunity |
| US6262600B1 (en) | 2000-02-14 | 2001-07-17 | Analog Devices, Inc. | Isolator for transmitting logic signals across an isolation barrier |
| EP2302850A1 (en) | 2003-04-30 | 2011-03-30 | Analog Devices, Inc. | Signal isolators using micro-transformers |
| US7421028B2 (en) * | 2004-06-03 | 2008-09-02 | Silicon Laboratories Inc. | Transformer isolator for digital power supply |
| US7302247B2 (en) | 2004-06-03 | 2007-11-27 | Silicon Laboratories Inc. | Spread spectrum isolator |
| JP5504903B2 (ja) * | 2010-01-14 | 2014-05-28 | 日本電気株式会社 | 受信回路、受信方法及び信号伝達システム |
| JP4656263B1 (ja) * | 2010-02-01 | 2011-03-23 | トヨタ自動車株式会社 | 信号伝達装置 |
-
2012
- 2012-04-26 JP JP2012101655A patent/JP5891100B2/ja not_active Expired - Fee Related
-
2013
- 2013-04-10 US US13/860,040 patent/US8948276B2/en active Active
- 2013-04-25 CN CN201310146752.4A patent/CN103378831B/zh not_active Expired - Fee Related
-
2014
- 2014-12-18 US US14/575,045 patent/US9166738B2/en not_active Expired - Fee Related
-
2015
- 2015-09-16 US US14/856,039 patent/US20160006542A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20150103950A1 (en) | 2015-04-16 |
| CN103378831B (zh) | 2017-12-01 |
| US8948276B2 (en) | 2015-02-03 |
| US20130287141A1 (en) | 2013-10-31 |
| CN103378831A (zh) | 2013-10-30 |
| JP2013229815A (ja) | 2013-11-07 |
| US9166738B2 (en) | 2015-10-20 |
| US20160006542A1 (en) | 2016-01-07 |
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| LAPS | Cancellation because of no payment of annual fees |