JP5889954B2 - トランジスタベースのマイクロメータ又はナノメータ共振装置 - Google Patents
トランジスタベースのマイクロメータ又はナノメータ共振装置 Download PDFInfo
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- JP5889954B2 JP5889954B2 JP2014098943A JP2014098943A JP5889954B2 JP 5889954 B2 JP5889954 B2 JP 5889954B2 JP 2014098943 A JP2014098943 A JP 2014098943A JP 2014098943 A JP2014098943 A JP 2014098943A JP 5889954 B2 JP5889954 B2 JP 5889954B2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/323—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator the resonator having more than two terminals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Pressure Sensors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
− フィードバックループが、フィードバックループに入力される信号とフィードバックループから出力される信号との間のπ/2に相当する位相シフトを行うのに十分であること。
− 対応づけられた回路の絶対値が、以下の式1に相当すること。
Claims (11)
- 可動素子(3)と固定素子(4)とを備えるナノメータサイズ又はマイクロメータサイズの電気機械共振器(1)と、
前記共振器(1)の励振入力(E)に接続されるフィードバックループに、前記固定素子(4)に対する前記可動素子(3)の動きを表す検出信号を供給する検出手段と、を備え、
前記共振器(1)は、前記検出手段及び前記フィードバックループと同じ基板上に形成され、
前記フィードバックループは、基準電圧(GND)と励振入力(E)との間に直列に接続される第1トランジスタ(6)及び第2トランジスタ(7)を備え、
容量性負荷(5)は、前記励振入力(E)と前記基準電圧(GND)との間に接続され、
前記検出信号は、前記第1トランジスタ(6)の導電率を制御するために、前記第1トランジスタの制御電極に直接入力され、
前記検出手段は、前記可動素子(3)の上に設けられた圧電抵抗力センサであり、前記可動素子(3)が変形したときに前記圧電抵抗力センサの抵抗の変化を読み取ることにより前記可動素子(3)の動きを検出する、
ことを特徴とする共振装置。 - 前記励振入力(E)と電源電圧(Vdd)との間に接続されるバイアス抵抗(9)を備える、請求項1記載の共振装置。
- 前記励振入力(E)と電源電圧(Vdd)との間に接続される第3トランジスタ(11)を備え、
前記第3トランジスタは、所定電圧(VS)のバイアスがかけられる制御電極を有する、請求項1記載の共振装置。 - バイアス電圧(Vg)と、前記第1トランジスタ(6)と前記検出手段との間の共通端子と、の間に接続される追加の抵抗(10)を備える、ことを特徴とする請求項1乃至3の何れか1項記載の共振装置。
- バイアス電圧(Vg)と、前記第1トランジスタ(6)と前記検出手段との間の共通端子と、の間に接続される第4トランジスタを備え、前記第4トランジスタは、第2所定電圧(VW)のバイアスがかけられる制御電極を有する、請求項1乃至3の何れか1項記載の共振装置。
- 前記共振器(1)は、容量励振型である、ことを特徴とする請求項1乃至5の何れか1項記載の共振装置。
- 前記共振器(1)は、熱弾性励振型である、ことを特徴とする請求項1乃至6の何れか1項記載の共振装置。
- 前記第2トランジスタ(7)は、電圧Vcasが加えられる制御電極を有する、ことを特徴とする請求項1乃至7の何れか1項記載の共振装置。
- 前記検出手段及び前記共振器は、ナノワイヤにより形成される、ことを特徴とする請求項1または6に記載の共振装置。
- 前記検出手段は、前記第1トランジスタの制御電極に直接接続された検出電極を有する、ことを特徴とする請求項1乃至9の何れか1項記載の共振装置。
- 前記検出電極と、前記第1トランジスタの制御電極との間の接続は、トランジスタを有しない、ことを特徴とする請求項10記載の共振装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR09/00903 | 2009-02-27 | ||
FR0900903A FR2942681B1 (fr) | 2009-02-27 | 2009-02-27 | Dispositif resonant micrometrique ou nanometrique a transistors |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010042292A Division JP2010268427A (ja) | 2009-02-27 | 2010-02-26 | トランジスタベースのマイクロメータ又はナノメータ共振装置 |
Publications (2)
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JP2014200091A JP2014200091A (ja) | 2014-10-23 |
JP5889954B2 true JP5889954B2 (ja) | 2016-03-22 |
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JP2010042292A Pending JP2010268427A (ja) | 2009-02-27 | 2010-02-26 | トランジスタベースのマイクロメータ又はナノメータ共振装置 |
JP2014098943A Expired - Fee Related JP5889954B2 (ja) | 2009-02-27 | 2014-05-12 | トランジスタベースのマイクロメータ又はナノメータ共振装置 |
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JP2010042292A Pending JP2010268427A (ja) | 2009-02-27 | 2010-02-26 | トランジスタベースのマイクロメータ又はナノメータ共振装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8018291B2 (ja) |
EP (1) | EP2256921B1 (ja) |
JP (2) | JP2010268427A (ja) |
FR (1) | FR2942681B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2943654B1 (fr) | 2009-03-30 | 2011-08-26 | Commissariat Energie Atomique | Realisation d'un dispositif micro-electronique comportant un composant nems en silicium monocristallin et un transistor dont la grille est realisee dans la meme couche que la structure mobile de ce composant. |
EP2442445B1 (en) * | 2010-10-12 | 2013-12-11 | Nxp B.V. | MEMS oscillator |
JP2012156946A (ja) * | 2011-01-28 | 2012-08-16 | Yokogawa Electric Corp | 発振回路およびそれを用いた振動式センサ |
FR2973504B1 (fr) * | 2011-03-31 | 2014-01-10 | Commissariat Energie Atomique | Systeme de mesure a resonateurs electromecaniques, procede de fabrication d'un tel systeme et procede de lecture d'au moins deux resonateurs electromecaniques |
KR101928344B1 (ko) | 2012-10-24 | 2018-12-13 | 삼성전자주식회사 | 나노 공진 장치 및 방법 |
FR3061165B1 (fr) * | 2016-12-22 | 2019-09-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure microelectronique a amortissement visqueux controle par maitrise de l'effet thermo-piezoresistif |
Family Cites Families (20)
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US3054973A (en) * | 1958-05-26 | 1962-09-18 | Itt | Crystal controlled oscillator circuit with frequency control means |
US3996530A (en) * | 1975-06-30 | 1976-12-07 | International Business Machines Corporation | Butler oscillator |
JPS6464403A (en) * | 1987-09-03 | 1989-03-10 | Nec Corp | Oscillation circuit |
US5550516A (en) * | 1994-12-16 | 1996-08-27 | Honeywell Inc. | Integrated resonant microbeam sensor and transistor oscillator |
JP3508401B2 (ja) * | 1996-07-12 | 2004-03-22 | 富士通株式会社 | 増幅回路および多段増幅回路 |
JP4511739B2 (ja) * | 1999-01-15 | 2010-07-28 | ザ リージェンツ オブ ザ ユニヴァーシティ オブ カリフォルニア | マイクロ電子機械システムを形成するための多結晶シリコンゲルマニウム膜 |
EP2239794A3 (en) * | 1999-07-02 | 2011-03-23 | President and Fellows of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
AU2001255865A1 (en) * | 2000-04-20 | 2001-11-07 | The Regents Of The University Of Michigan | Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus |
US6448103B1 (en) * | 2001-05-30 | 2002-09-10 | Stmicroelectronics, Inc. | Method for making an accurate miniature semiconductor resonator |
GB0206510D0 (en) * | 2002-03-20 | 2002-05-01 | Qinetiq Ltd | Micro-Electromechanical systems |
JP4602130B2 (ja) * | 2004-04-28 | 2010-12-22 | パナソニック株式会社 | 電気機械フィルタ |
JP2006041911A (ja) * | 2004-07-27 | 2006-02-09 | Matsushita Electric Ind Co Ltd | Memsフィルタ装置およびその製造方法 |
CN101088216B (zh) * | 2004-12-22 | 2010-05-12 | Nxp股份有限公司 | 电荷偏置mem谐振器 |
JP4524179B2 (ja) * | 2004-12-28 | 2010-08-11 | 日本電波工業株式会社 | ピアース型発振回路 |
WO2006083482A2 (en) * | 2005-01-07 | 2006-08-10 | Trustees Of Boston University | Nanomechanical oscillator |
US7227432B2 (en) * | 2005-06-30 | 2007-06-05 | Robert Bosch Gmbh | MEMS resonator array structure and method of operating and using same |
CN101273456B (zh) * | 2005-09-27 | 2012-04-18 | 康奈尔研究基金公司 | 形状记忆装置 |
JP4728866B2 (ja) * | 2006-04-13 | 2011-07-20 | 株式会社東芝 | 共振回路、フィルタ回路および発振回路 |
FR2901263B1 (fr) | 2006-05-18 | 2008-10-03 | Commissariat Energie Atomique | Dispositif sensible a un mouvement comportant au moins un transistor |
JP2008211420A (ja) * | 2007-02-26 | 2008-09-11 | Seiko Instruments Inc | 発振器 |
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2009
- 2009-02-27 FR FR0900903A patent/FR2942681B1/fr not_active Expired - Fee Related
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2010
- 2010-02-23 US US12/710,817 patent/US8018291B2/en not_active Expired - Fee Related
- 2010-02-25 EP EP10154724.8A patent/EP2256921B1/fr not_active Not-in-force
- 2010-02-26 JP JP2010042292A patent/JP2010268427A/ja active Pending
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Also Published As
Publication number | Publication date |
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FR2942681A1 (fr) | 2010-09-03 |
US20100219895A1 (en) | 2010-09-02 |
FR2942681B1 (fr) | 2011-05-13 |
EP2256921A1 (fr) | 2010-12-01 |
US8018291B2 (en) | 2011-09-13 |
JP2010268427A (ja) | 2010-11-25 |
EP2256921B1 (fr) | 2017-11-29 |
JP2014200091A (ja) | 2014-10-23 |
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